JPS63276894A - Film electroluminescent element - Google Patents
Film electroluminescent elementInfo
- Publication number
- JPS63276894A JPS63276894A JP62111212A JP11121287A JPS63276894A JP S63276894 A JPS63276894 A JP S63276894A JP 62111212 A JP62111212 A JP 62111212A JP 11121287 A JP11121287 A JP 11121287A JP S63276894 A JPS63276894 A JP S63276894A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light emitting
- low melting
- moisture
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 32
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 39
- 239000010408 film Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000007789 sealing Methods 0.000 abstract description 14
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 238000005401 electroluminescence Methods 0.000 description 39
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000012190 activator Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
「産業上の利用分野」
本発明は、エレクトロルミネセンス（ＥＬ）現象を利用
した薄膜ＯＬ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a thin film OL device that utilizes the electroluminescence (EL) phenomenon.
「従来の技術とその問題点」
第４図は、従来の２重絶縁構造の薄膜ＯＬ素子を示すも
のである。この薄膜ＥＬ素子は、ガラス等からなる透明
基板１上に透明電極２と、絶縁層３と、ＥＬ発光層４と
、絶縁層５と、対向電極６とが順次積層されでなる発光
部７が設けられたものである。"Prior Art and its Problems" FIG. 4 shows a conventional thin film OL device with a double insulation structure. This thin film EL element has a light emitting section 7 made up of a transparent electrode 2, an insulating layer 3, an EL light emitting layer 4, an insulating layer 5, and a counter electrode 6 laminated in sequence on a transparent substrate 1 made of glass or the like. It has been established.
そして、この薄膜ＥＬ素子は、透明電極２と対向電極６
との間に数１（Ｈｌｚから数ｋＨｚの電圧を印加するこ
とによりＥＬ発光Ｉｍ４内の活性種イオンを励起して発
光するようになっている。この薄ＪＩＩＥＬ素子は、近
年、各種装置のディスプレイに応用されつつある。This thin film EL element has a transparent electrode 2 and a counter electrode 6.
By applying a voltage of several 1 (Hlz to several kHz) between the It is being applied to
ところで、薄膜ＥＬ素子においては、湿気に弱く、湿気
に触れることにより、寿命が著しく短くなるという問題
があった。このため、水分の侵入を防止する各種の措置
が採られている。By the way, thin film EL elements have a problem in that they are sensitive to moisture, and their lifespan is significantly shortened when they come into contact with moisture. For this reason, various measures are taken to prevent moisture from entering.
第３図に示した従来の薄膜ＥＬ素子では、透明基板ｌ上
の発光部形成面をガラスキャップ８で封止している。ま
た、ガラスキャップ８の内部には必要・に応じて、更に
シリコンオイル等のオイル９を充填している。In the conventional thin film EL device shown in FIG. 3, the surface on which the light emitting portion is formed on the transparent substrate l is sealed with a glass cap 8. Further, the inside of the glass cap 8 is further filled with oil 9 such as silicone oil, if necessary.
しかしながら、このような従来の薄膜ＥＬ素子では、成
形されたガラスキャップ８を用いこれを発光部７の形成
された基板！に気密に接着することによって防湿を施し
ているので、ガラスキャップ８を精密に成形したり、ガ
ラスキャップ８を発光部７の形成された基板１に正確に
接着する必要が“ある。このため、材料コストが高くな
り、また組み立て作業が繁雑となり、その結果、上記従
来の薄膜ＥＬ素子はかなり高価なものとなってしまう問
題があった。また素子全体が厚くなるという欠点も有し
ている。However, in such a conventional thin film EL element, a molded glass cap 8 is used, and this is used as a substrate on which a light emitting portion 7 is formed! Since moisture proofing is achieved by airtightly adhering the glass cap 8 to the substrate 1, it is necessary to precisely mold the glass cap 8 and accurately adhere the glass cap 8 to the substrate 1 on which the light emitting section 7 is formed. There is a problem in that the material cost is high and the assembly work is complicated, and as a result, the above-mentioned conventional thin film EL device becomes quite expensive.It also has the disadvantage that the device as a whole becomes thick.
第５図は他の実施例を示すもので、この例の薄膜ＥＬ素
子にあっては、発光部７が形成された基板Ｉに熱可塑性
樹脂からなる樹脂封止層１０を積層し、この樹脂封止層
１０の裏面側に防湿フィルム１１を貼着することによっ
て発光部７を水分から保護している。この樹脂封止層１
０は水分透過率の小さいオレフィン系樹脂等によって形
成されており、また防湿フィルム１１にはポリエチレン
テレフタレート（以下、ＰＥＴと略称する）からなるフ
ィルムやＰＥＴとアルミニウム箔とのラミネートフィル
ム等が用いられている。この薄膜ＥＬ素子にあっては、
樹脂封止層１０とから樹脂ペレットと防湿フィルム１１
を、発光部７が形成された基板１に載置して加熱するこ
とによって簡単に製造できる利点がある。FIG. 5 shows another embodiment. In the thin film EL device of this embodiment, a resin sealing layer 10 made of thermoplastic resin is laminated on the substrate I on which the light emitting part 7 is formed, and this resin A moisture-proof film 11 is attached to the back side of the sealing layer 10 to protect the light emitting section 7 from moisture. This resin sealing layer 1
0 is made of an olefin resin with low moisture permeability, and the moisture-proof film 11 is made of polyethylene terephthalate (hereinafter abbreviated as PET) or a laminate film of PET and aluminum foil. There is. In this thin film EL element,
From the resin sealing layer 10 to the resin pellets and the moisture-proof film 11
It has the advantage that it can be easily manufactured by placing it on the substrate 1 on which the light emitting section 7 is formed and heating it.
ところで、この薄膜ＥＬ素子においては、樹脂封止層ｌ
Ｏがオレフィン系樹脂等によって形成されているため防
湿フィルム１１を樹脂封止層１０に強固に接着すること
ができず、これらの接着界面から水分が侵入したり、防
湿フィルム１１が剥離し易く、充分な耐湿性を得られな
い問題があった。By the way, in this thin film EL element, the resin sealing layer l
Since O is formed of an olefin resin or the like, the moisture-proof film 11 cannot be firmly adhered to the resin sealing layer 10, and moisture can enter through these adhesive interfaces and the moisture-proof film 11 can easily peel off. There was a problem that sufficient moisture resistance could not be obtained.
このため、防湿フィルム１１と樹脂封止層１０とを接着
力の強い熱硬化性樹脂を用いて強固に接着することが提
案されているが、この場合には接着剤として用いる熱硬
化性樹脂に含まれる溶剤のために発光部７が劣化してし
まう問題がある。For this reason, it has been proposed to firmly bond the moisture-proof film 11 and the resin sealing layer 10 using a thermosetting resin with strong adhesive strength. There is a problem in that the light emitting section 7 deteriorates due to the solvent contained.
本発明は、上記事情に鑑みてなされたしので、耐湿性に
優れた薄膜ＣＬ素子を安価に提供することを目的とする
。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a thin film CL element with excellent moisture resistance at a low cost.
「問題点を解決するための手段」
本発明は、透明絶縁性基板上に、少なくとも透明電極と
、ＥＬ発光層と、絶縁層と、対向電極とを積層してなる
薄膜ＥＬ素子において、前記薄膜形成面を低融点ガラス
保護膜で密閉封止したことを特徴とする。"Means for Solving the Problems" The present invention provides a thin film EL device in which at least a transparent electrode, an EL light emitting layer, an insulating layer, and a counter electrode are laminated on a transparent insulating substrate. It is characterized by hermetically sealing the forming surface with a low melting point glass protective film.
本発明の薄膜ＥＬｍ子では、防湿性を有する低融点ガラ
ス保護膜により発光部が水分から遮断、保護されるので
、これにより発光部の劣化が防止される。そして低融点
ガラス保護膜は十分な厚さを有しているので、熱に強（
、従って発光部は熱により劣化しにくくなる。従って、
本発明の薄膜ＥＬ素子は水分に浸され難く、長寿命のも
のとなる。In the thin-film EL device of the present invention, the light-emitting portion is shielded and protected from moisture by the moisture-proof, low-melting-point glass protective film, thereby preventing deterioration of the light-emitting portion. In addition, the low melting point glass protective film has sufficient thickness, so it is resistant to heat (
Therefore, the light emitting part is less likely to deteriorate due to heat. Therefore,
The thin film EL device of the present invention is not easily immersed in moisture and has a long life.
本発明の薄膜ＥＬ素子に用いる低融点ガラス保護膜とし
ては、封着温度が３００〜５００℃程度のものであれば
利用できる。The low melting point glass protective film used in the thin film EL device of the present invention can be used as long as it has a sealing temperature of about 300 to 500°C.
また、発光部は、少なくとも透明電極とＥＬ発光層と対
向電極とが積層されて、なるもので、必要に応じて透明
電極および対向電極とＥＬ発光層との間に絶縁層が設け
られる。ＥＬ発光層は、電圧を印加することにより発光
する層で、例えば通常硫化亜鉛又は、硫化亜鉛とセレン
化亜鉛の混晶、硫化亜鉛と硫化カドミウムの混晶などか
らなる母材に銅、マンガン等の付活剤が添加された材料
により形成される。Further, the light emitting section is formed by laminating at least a transparent electrode, an EL light emitting layer, and a counter electrode, and an insulating layer is provided between the transparent electrode, the counter electrode, and the EL light emitting layer, if necessary. An EL light-emitting layer is a layer that emits light when a voltage is applied. For example, the base material is usually made of zinc sulfide, a mixed crystal of zinc sulfide and zinc selenide, a mixed crystal of zinc sulfide and cadmium sulfide, etc., and a base material such as copper, manganese, etc. It is made of a material to which an activator is added.
「実施例」
（実施例Ｉ）
第１図は、本発明の薄膜ＥＬ＊子の第一実施例を示すも
のである。"Example" (Example I) FIG. 1 shows a first example of the thin film EL* element of the present invention.
薄膜ＥＬ＊子は発光部を備えてなるもので、この例では
、ガラスからなる透明基板１とその裏面側に形成された
発光部によって構成されている。発光部は、透明電極２
と、絶縁層３と、ＣＬ発光層４と、絶縁Ｗ！Ｊ５と、対
向電極６とが積層されてなるものである。ＥＬ発光層４
は硫化亜鉛からなる母材に付活剤としてマンガンを添加
した材料により形成されている。透明電極２はインジウ
ム・スズ酸化物（以下、ＩＴＯと略称する）によって、
対向電極６はアルミニウム等をスパッタすることによっ
てそれぞれ格子状に形成され、これら透明電極２と対向
電極６は交差するように配置されている（図においては
簡略化して平行に描かれている）。The thin film EL* element is equipped with a light emitting part, and in this example, it is composed of a transparent substrate 1 made of glass and a light emitting part formed on the back side of the transparent substrate 1. The light emitting part is a transparent electrode 2
, the insulating layer 3, the CL light emitting layer 4, and the insulating W! J5 and the counter electrode 6 are laminated. EL light emitting layer 4
is made of a material in which manganese is added as an activator to a base material of zinc sulfide. The transparent electrode 2 is made of indium tin oxide (hereinafter abbreviated as ITO).
The counter electrodes 6 are each formed in a lattice shape by sputtering aluminum or the like, and the transparent electrodes 2 and the counter electrodes 6 are arranged so as to intersect with each other (in the figure, they are simply drawn in parallel).
また、絶縁層３．５は酸化タンタルによって形成されて
いる。Further, the insulating layer 3.5 is made of tantalum oxide.
このように形成された発光部の上に、低融点ガラスｒＬ
Ｓ−０１１８Ｊ（商品名：日本電気硝子製）、ｒＬＳ−
０２０６Ｊ（商品名−日本電気硝子製）などと、低分子
量のアクリル系樹脂をα−テルピネオールの溶媒に５．
ｗｔ％程度溶解したビークルとを混合したペーストを８
０〜１００メツシユーのステンレス製印刷スクリーンを
用いて印刷し、１２０℃にて１０〜２０分間乾燥した後
、大気中にて３２（１〜３８０℃に加熱し、前記ペース
ト中の樹脂成分（バインダー）を分解除去する。その後
、約４３０℃にて１０分間の加熱をおこない、低融点ガ
ラス保護膜１２が透明基板ｌと接着して形成され、発光
部全体を密封している。On top of the light emitting part formed in this way, a low melting point glass rL
S-0118J (product name: Nippon Electric Glass), rLS-
0206J (trade name - manufactured by Nippon Electric Glass Co., Ltd.) and a low molecular weight acrylic resin in a solvent of α-terpineol.5.
A paste mixed with vehicle dissolved at about 8 wt%
After printing using a stainless steel printing screen with a mesh size of 0 to 100, and drying at 120°C for 10 to 20 minutes, heating to 32°C (1 to 380°C) in the air to remove the resin component (binder) in the paste. Thereafter, heating is performed at about 430° C. for 10 minutes, and a low melting point glass protective film 12 is bonded to the transparent substrate 1, thereby sealing the entire light emitting part.
この例の薄膜ＥＬ素子に用いられている透明基板」とし
ては、「コーニング７０５９Ｊ（商品名：コーニング社
）が用いられており、該基板の全体はガラス転移温度以
上にならないため、前記製造工程中においてそり等の変
形が発生しない。Corning 7059J (trade name: Corning Inc.) is used as the transparent substrate used in the thin film EL element in this example, and since the entire substrate does not reach a temperature higher than the glass transition temperature, during the manufacturing process No deformation such as warping occurs.
この薄膜ＥＬ素子の耐湿性・耐熱性を試験したところ、
ガラスキャップにてシリコンオイルを介して封止する従
来の薄膜ＥＬ素子と同程度の優れた特性が得られた。ま
た、精密成形やオイル充填などの工程は必要とせず、容
易に製造することができた。When testing the moisture resistance and heat resistance of this thin film EL element, we found that
Excellent characteristics comparable to those of a conventional thin film EL element sealed with a glass cap via silicone oil were obtained. In addition, it did not require processes such as precision molding or oil filling, and could be manufactured easily.
（実施例２）
第２図は本発明の薄膜ＥＬ素子の第二実施例を示すもの
である。(Example 2) FIG. 2 shows a second example of the thin film EL device of the present invention.
この例の薄１１ｉＥＬ素子は、発光部を赤外線吸収用金
属膜１３を介して低融点ガラス保護［１２で被覆密封す
る以外は前記実施例１と同様にして形成される。The thin 11iEL element of this example is formed in the same manner as in Example 1 except that the light emitting part is covered and sealed with a low melting point glass protector [12] via an infrared absorbing metal film 13.
赤外線吸収用金属膜１３は、Ｔｉ、Ｃｒ、Ｎｉ、Ｔａ、
Ｗ。The infrared absorbing metal film 13 is made of Ti, Cr, Ni, Ta,
W.
Ｆｅ等の金属あるいはこれらの合金が用いられ、例えば
４２−６合金や５００合金スパッタ法あるいは電子ビー
ム蒸着法等により形成される。このとき、赤外線吸収用
金属膜は発光部の対向電極６から絶縁されている。その
膜厚は０．１〜１μｍ程度が適当である。A metal such as Fe or an alloy thereof is used, and is formed by, for example, a 42-6 alloy or a 500 alloy sputtering method, an electron beam evaporation method, or the like. At this time, the infrared absorbing metal film is insulated from the counter electrode 6 of the light emitting section. The film thickness is suitably about 0.1 to 1 μm.
このようにして赤外線吸収用金属ｇｉａを形成した後、
薄膜ＣＬ素子全体を３００℃程度に保持し、赤外線吸収
用金属１１１３の上に０．５ｓｍ程度の厚さの低融点ガ
ラス板を置き、低融点ガラス板の上方に、赤外線ランプ
を設け、赤外線照射により、約５５０℃の加熱を施こす
。After forming the infrared absorbing metal gia in this way,
The entire thin film CL element is maintained at about 300°C, a low melting point glass plate with a thickness of about 0.5 sm is placed on the infrared absorbing metal 1113, an infrared lamp is provided above the low melting point glass plate, and infrared rays are irradiated. Heating is applied to about 550°C.
赤外線は主に赤外線吸収用金属膜１３に吸収され、該赤
外線吸収用金属膜１３の温度が上昇して、接する低融点
ガラス板が融けてガラス基板１と接着し発光部全体を密
封する低融点ガラス保護膜１２が形成される。Infrared rays are mainly absorbed by the infrared absorbing metal film 13, and the temperature of the infrared absorbing metal film 13 rises, causing the low melting point glass plate in contact to melt and adhere to the glass substrate 1, sealing the entire light emitting part. A glass protective film 12 is formed.
この薄膜ＥＬ素子の耐湿性・耐熱性を試験したところ、
前記実施例１と同様の効果が得られた。When testing the moisture resistance and heat resistance of this thin film EL element, we found that
The same effects as in Example 1 were obtained.
（実施例３）
第３図は本発明の薄膜ＥＬ素子の第三実施例を示すもの
である。(Embodiment 3) FIG. 3 shows a third embodiment of the thin film EL device of the present invention.
この例の薄膜ＥＬ素子は、発光部を備えた透明基板ｌと
カバーガラス基板１４とを、低融点ガラス保護膜１２を
介して融着している以外は前記実施例１と同様にして形
成される。The thin film EL device of this example was formed in the same manner as in Example 1, except that the transparent substrate l provided with the light emitting part and the cover glass substrate 14 were fused together via the low melting point glass protective film 12. Ru.
カバーガラス基板１４はたとえば「コーニング７０５９
４（商品名：コーニング社）ガラス基板が使用出来る。The cover glass substrate 14 is, for example, "Corning 7059".
4 (Product name: Corning Inc.) A glass substrate can be used.
この薄膜ＥＬ素子の耐湿性・耐熱性を試験したところ、
前記実施例！よりもやや良好な効果が得られた。When testing the moisture resistance and heat resistance of this thin film EL element, we found that
Said example! A slightly better effect was obtained.
「発明の効果」
以上説明したように本発明にあっては、薄膜形成面を低
融点ガラス保護膜で密閉封止されており、高度な耐湿性
と耐熱性を付与することができるので、発光部を水分か
ら高度に遮断、保護することができ、かつ外界からの加
熱や駆動時の発熱に対しても長期に渡って劣化すること
がない。"Effects of the Invention" As explained above, in the present invention, the surface on which the thin film is formed is hermetically sealed with a low melting point glass protective film, and it is possible to impart a high degree of moisture resistance and heat resistance. It can be highly shielded and protected from moisture, and will not deteriorate over a long period of time even when exposed to heat from the outside world or heat generated during driving.
また、本発明の薄膜ＥＬ素子は、焼成あるいは加熱によ
り容易に低融点ガラス保！Ｉａを形成することができる
ので、極めて効率良く製造することができる。Furthermore, the thin film EL element of the present invention can be easily maintained as a low melting point glass by baking or heating. Since Ia can be formed, it can be manufactured extremely efficiently.
従って、本発明によれば、薄膜ＥＬ素子の製造コストの
低減を図ることができ、耐湿性および信頼性に優れた薄
膜ＥＬ素子を安価に提供することができる。Therefore, according to the present invention, the manufacturing cost of a thin film EL element can be reduced, and a thin film EL element with excellent moisture resistance and reliability can be provided at a low cost.
第１図は本発明の薄膜ＥＬ素子の第一実施例を示す断面
図、第２図は本発明の薄膜ＥＬ素子の第二実施例を示す
断面図、第３図は本発明の薄膜ＥＩＪ子の第三実施例を
示す断面図、第４図は従来の薄膜ＥＬ素子の一例を示す
断面図、第５図は従来の薄膜ＥＬ素子の他の例を示す断
面図である。
！・・・・・・透明基板、２・・・・・・透明電極、３
．５ ・・・・・・絶縁層、６・・・・・・対向電極、
１２・旧・・低融点ガラス保護膜。
出願人 アルプス電気株式会社
第１図
第２図
ｊＩＪ図
Ｉ５ｍFIG. 1 is a sectional view showing a first embodiment of a thin film EL device of the present invention, FIG. 2 is a sectional view showing a second embodiment of a thin film EL device of the present invention, and FIG. 3 is a sectional view of a thin film EL device of the present invention. 4 is a sectional view showing an example of a conventional thin film EL device, and FIG. 5 is a sectional view showing another example of a conventional thin film EL device. ! ...Transparent substrate, 2...Transparent electrode, 3
．． 5...Insulating layer, 6...Counter electrode,
12. Old: Low melting point glass protective film. Applicant: Alps Electric Co., Ltd. Figure 1 Figure 2 j IJ Figure I5m
Claims (1)
、絶縁層と、対向電極とを積層してなる薄膜ＥＬ素子に
おいて、前記薄膜形成面を低融点ガラス保護膜で密閉封
止したことを特徴とする薄膜ＥＬ素子。A thin film EL element comprising at least a transparent electrode, an EL light emitting layer, an insulating layer, and a counter electrode stacked on a transparent substrate, characterized in that the thin film forming surface is hermetically sealed with a low melting point glass protective film. A thin film EL device with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111212A JPS63276894A (en) | 1987-05-07 | 1987-05-07 | Film electroluminescent element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111212A JPS63276894A (en) | 1987-05-07 | 1987-05-07 | Film electroluminescent element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63276894A true JPS63276894A (en) | 1988-11-15 |
Family
ID=14555366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62111212A Pending JPS63276894A (en) | 1987-05-07 | 1987-05-07 | Film electroluminescent element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63276894A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030085911A (en) * | 2002-05-02 | 2003-11-07 | 주식회사 엘리아테크 | Organic electro luminescence display device and method of manufacturing the same |
| US7344901B2 (en) | 2003-04-16 | 2008-03-18 | Corning Incorporated | Hermetically sealed package and method of fabricating of a hermetically sealed package |
-
1987
- 1987-05-07 JP JP62111212A patent/JPS63276894A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030085911A (en) * | 2002-05-02 | 2003-11-07 | 주식회사 엘리아테크 | Organic electro luminescence display device and method of manufacturing the same |
| US7344901B2 (en) | 2003-04-16 | 2008-03-18 | Corning Incorporated | Hermetically sealed package and method of fabricating of a hermetically sealed package |
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