JPS63256460A - Substrate for thermal head and production thereof - Google Patents
Substrate for thermal head and production thereofInfo
- Publication number
- JPS63256460A JPS63256460A JP62089730A JP8973087A JPS63256460A JP S63256460 A JPS63256460 A JP S63256460A JP 62089730 A JP62089730 A JP 62089730A JP 8973087 A JP8973087 A JP 8973087A JP S63256460 A JPS63256460 A JP S63256460A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thermal head
- insulating layer
- heat insulating
- metal alkoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- 239000003054 catalyst Substances 0.000 claims description 4
- 230000007062 hydrolysis Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000007639 printing Methods 0.000 abstract description 5
- 230000003301 hydrolyzing effect Effects 0.000 abstract description 4
- 238000000926 separation method Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000000379 polymerizing effect Effects 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- CRNJBCMSTRNIOX-UHFFFAOYSA-N methanolate silicon(4+) Chemical compound [Si+4].[O-]C.[O-]C.[O-]C.[O-]C CRNJBCMSTRNIOX-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はサーマルヘッド用基板およびその製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a substrate for a thermal head and a method for manufacturing the same.
サーマルヘッド用基板は一般的に第２図に示すように、
アルミナセラミクス基板１上に保温層２を設けた構造を
有する。従来のサーマルヘッド用基板では、保温層２が
ガラスで構成されていた。The thermal head substrate generally has the following structure as shown in Figure 2.
It has a structure in which a heat insulating layer 2 is provided on an alumina ceramic substrate 1. In conventional thermal head substrates, the heat insulating layer 2 is made of glass.
（発明が解決しようとする問題点〕
しかし最近サーマルヘッドに対しより高精細でより高速
にかつより小さなパワーで印字の可能な性能が求められ
ており、上記の従来のサーマルヘッド用基板では、ドツ
ト間の熱分離、熱のこちりの問題から限界があった。つ
まり、パワーを小さくて済むようにするためには保温層
２を厚くする必要があるが、こうすると発熱部の通電を
オフにした時の温度が十分速かに減少しない。また熱分
離も悪化する。逆に保温層２をうすくすると高速な印字
は可能となるが、印字に大きなパワーを必要とする。(Problem to be solved by the invention) However, recently there has been a demand for thermal heads to have the ability to print with higher precision, higher speed, and lower power. There was a limit due to the problem of thermal separation between the parts and heat condensation.In other words, in order to reduce the power consumption, it was necessary to make the heat insulating layer 2 thicker, but this would turn off the electricity to the heat generating part. When the heat insulating layer 2 is made thinner, the temperature does not decrease sufficiently quickly. Also, thermal separation deteriorates.On the other hand, if the heat insulating layer 2 is made thinner, high-speed printing becomes possible, but a large amount of power is required for printing.
これらの問題を解決するためには、発熱部に通電した時
、基板上に十分熱が蓄えられ、その後オフにした時十分
速やかに基板に熱が吸収されるサーマルヘッドの構造が
必要となる。In order to solve these problems, a thermal head structure is required that allows sufficient heat to be stored on the substrate when the heat generating section is energized, and then absorbs the heat sufficiently quickly into the substrate when the heat generating section is turned off.
この問題を解決するために、実開昭６１−１４８６４０
公報に開示されているごとく、多孔質ガラスを密着した
基板が考案されたが、ガラス層を薄くできない、製造上
の困難からコスト高を招く等の欠点があった。In order to solve this problem,
As disclosed in the publication, a substrate with porous glass adhered thereto was devised, but it had drawbacks such as the inability to make the glass layer thin and the manufacturing difficulties leading to high costs.
この発明は以上述べた従来のサーマルヘッド用基板の欠
点を除去し、保温性に優れ、かつ熱分離の良好なサーマ
ルヘッド用基板を提供することを目的とする。It is an object of the present invention to eliminate the drawbacks of the conventional thermal head substrates described above, and to provide a thermal head substrate with excellent heat retention and good thermal isolation.
（問題点を解決するための手段）
本発明のサーマルヘッド用基板は、セラミクス基板と、
上記セラミクス基板上の保温層とを備え、上記保温層と
して金属アルコキシドの加水分解、重合により形成した
ゲル状シリカを用いたことを特徴とすることを特徴とす
る。(Means for solving the problem) The thermal head substrate of the present invention includes a ceramic substrate,
and a heat insulating layer on the ceramic substrate, and the heat insulating layer is characterized by using gel-like silica formed by hydrolysis and polymerization of metal alkoxide.
本発明のサーマルヘッド用基板の製造方法は、少なくと
も金属アルコキシドと水とを含む溶液をセラミクス基板
に塗布し、乾燥させる工程を含むことを特徴とすること
を特徴とするものである。The method for manufacturing a thermal head substrate according to the present invention is characterized in that it includes a step of applying a solution containing at least metal alkoxide and water to a ceramic substrate and drying the solution.
上記のような保温層を有するサーマルヘッド用基板では
、少ない電力で印字が可能であり、また同一の電力を用
いれば従来に比べより薄い保温層でよく、従ってドツト
間の熱分離が良好となり熱的な尾引きが減少する。即ち
、印加電力をオフしたときの温度の低下が迅速となる。Thermal head substrates with a heat insulating layer as described above enable printing with less power, and with the same power, a thinner heat insulating layer is required compared to conventional methods, resulting in better thermal isolation between dots and less heat. Reduces trailing. That is, the temperature decreases quickly when the applied power is turned off.
また、ゲル状シリカは耐熱性が高くサーマルヘッド用基
板に用いるのに好適である。In addition, gel-like silica has high heat resistance and is suitable for use in thermal head substrates.
本発明におけるアルコキシランの加水分解重合の過程は
以下に示す化学式で表わされる。The process of hydrolytic polymerization of alkoxylan in the present invention is represented by the chemical formula shown below.
５ｔ（ＯＲ） ４ ＋Ｈ２０；”ＨＯ３ｉ（ＯＲ） ３
＋ＲＯＨＨＯ苧ｒ （０Ｒ）３ 十８２０″；”’（
０Ｈ）２．５ｉ（ＯＲ）２ ＋ＲＯＨ三５ｉ−ＯＲ＋Ｈ
Ｏ−３ｉ三Ｅ士 三Ｓｉ −０−３ｉ ＋ＲＯ，Ｈ三Ｓ
ｔ −０）−１＋ＨＯ−３ｉ２≠ ミＳｉ −０−３ｉ
＋ＨＯＨこのような反応により、本発明によれば簡易
に均質なゲル状シリカ層から成る保温層を形成すること
ができる。5t(OR) 4 +H20;”HO3i(OR) 3
+ROHHO 苧r (0R) 3 1820″;”’(
0H)2.5i(OR)2 +ROH35i-OR+H
O-3i 3E 3Si -0-3i +RO, H3S
t -0)-1+HO-3i2≠MiSi-0-3i
+HOH Through such a reaction, according to the present invention, a heat insulating layer made of a homogeneous gel-like silica layer can be easily formed.
本発明の一実施例として、金属アルコキシドとしてシリ
コンテトラメトキシドとシリコンテトラエトキシドを用
いて以下に述べる製造方法で基板を作成した。As an example of the present invention, a substrate was produced by the manufacturing method described below using silicon tetramethoxide and silicon tetraethoxide as metal alkoxides.
叉思■ユ
１ｍ０１のシリコンテトラメトキシド
Ｓ ｆ （ＯＣＨ３） ４を５ｍｏｌのメタノールで希
釈し、これにｐｔ＋ｉｏに調製した４ｍ０１のアンモニ
ア水を添加した。この溶液にアルミナ基板を浸漬し、引
きあげるディップ法によりアルミナ基板上にこの溶液を
塗布した。その１８０℃で１０分の乾燥をおこなった。1 m01 of silicon tetramethoxide S f (OCH3) 4 was diluted with 5 mol of methanol, and 4 m01 of aqueous ammonia prepared to pt+io was added thereto. An alumina substrate was immersed in this solution, and the solution was applied onto the alumina substrate by a dipping method. Drying was performed at 180° C. for 10 minutes.
この溶液塗布と、これに続く乾燥から成る操作を１５回
繰り返し、膜厚２０μｍのシリカゲル層をアルミナ基板
上に形成した。This operation consisting of solution application and subsequent drying was repeated 15 times to form a 20 μm thick silica gel layer on the alumina substrate.
ざらにこれを１１０℃で乾燥し、所望の基板を得た。This was roughly dried at 110°C to obtain a desired substrate.
丈厖■２
１１１１０１のシリコンテトラエトキシドＳ ｆ （Ｏ
Ｃ２Ｈ５＞ ４を１ｍｏｌ（７）メタノールテ希釈し、
これに１ｍ０１の水と０．０３ｍｏ Ｉの塩酸（ＨＣＪ
＞を加えた。この溶液をアルミナ基板上にスピンコー
ド法でコーティングし、８０℃で１０分の乾燥をおこな
った。この塗布と、これに続く乾燥とから成る操作を１
０回繰り返すことにより膜厚２０μｍのシリカゲル層を
アルミナ基板上に形成した。Length ■2 111101 silicon tetraethoxide S f (O
C2H5>4 was diluted with 1 mol (7) methanol,
To this, 1 m01 of water and 0.03 mo I of hydrochloric acid (HCJ
> was added. This solution was coated on an alumina substrate by a spin-coating method, and dried at 80° C. for 10 minutes. The operation consisting of this application and subsequent drying is carried out in one step.
By repeating this process 0 times, a 20 μm thick silica gel layer was formed on the alumina substrate.
次に、この基板の特性を調べるため、本実施例２で示し
た製造方法により製造したサーマルヘッド用基板を用い
てサーマルヘッドを形成し、その特性を調べた。サーマ
ルヘッドの発熱体は５０×７５μｍの矩形とし、これを
パルス巾がｏ、ａｍｓ 。Next, in order to examine the characteristics of this substrate, a thermal head was formed using the thermal head substrate manufactured by the manufacturing method shown in Example 2, and its characteristics were examined. The heating element of the thermal head has a rectangular shape of 50 x 75 μm, and the pulse width is o, ams.
くり返し周期が５ｍｓのパルスで駆動した時のピーク温
度と印加電力の関係を求めた。また比較試料として従来
の２０μｍのガラスグレーズ層をもつグレーズドアルミ
ナ基板を用いたサーマルヘッドも用意した。The relationship between the peak temperature and the applied power when driving with a pulse with a repetition period of 5 ms was determined. A thermal head using a conventional glazed alumina substrate with a 20 μm glass glaze layer was also prepared as a comparison sample.
第１図にその結果を示す。同図から分かるように、本発
明によるサーマルヘッド用基板を用いたサーマルヘッド
は同一の印加電力に対してピーク温度が高くなっている
。逆にピーク温度を一定にすれば、印加電力は小さくて
よい。即ち、熱効率が良好である。Figure 1 shows the results. As can be seen from the figure, the thermal head using the thermal head substrate according to the present invention has a higher peak temperature for the same applied power. Conversely, if the peak temperature is kept constant, the applied power may be small. That is, thermal efficiency is good.
以上の２つの実施例で加えたアンモニア、塩酸は、アル
コキシシランの加水分解、重合反応を促進するための触
媒として加えたもので他の触媒を加えることもでき、ま
た触媒を加えず水だけによっても、同様な基板を得るこ
とができる。The ammonia and hydrochloric acid added in the above two examples were added as catalysts to promote the hydrolysis and polymerization reaction of alkoxysilane. A similar substrate can also be obtained.
また実施例として主原料としてシリコンテトラメトキシ
ド、シリコンテトラエトキシドを用いているが、他のア
ルコキシシランを用いても同様の結果が得られる。また
アルコキシシランと水、触媒（必要に応じての、）を加
える比率、触媒の種類、比率は用いるアルコキシシラン
の種類、所望の溶液粘度等を考慮して適当に選べばよく
、またこれにアルミ等地の金属アルコキシドを加え、他
の金゛属酸化物を含むゲル状保温層を形成してもよい。Furthermore, although silicon tetramethoxide and silicon tetraethoxide are used as the main raw materials in the examples, similar results can be obtained by using other alkoxysilanes. In addition, the ratio of adding alkoxysilane, water, and catalyst (if necessary), the type of catalyst, and the ratio can be selected appropriately considering the type of alkoxysilane used, the desired solution viscosity, etc. A gel-like heat insulating layer containing other metal oxides may be formed by adding a metal alkoxide of the same type.
このように本発明のサーマルヘッド用基板を用いれば、
従来の基板に比べ少ない電力で印字が可能なサーマルヘ
ッドを構成することができ、また同一の電力で印字すれ
ば、従来に比べより薄い保 ゛湿層でよく、これによっ
てドツト間の熱分離が良好となり、熱的な尾引きが減少
する。また、ゲル状シリカは耐熱性が高くサーマルヘッ
ド用基板に用いるのに好適である。If the thermal head substrate of the present invention is used in this way,
It is possible to construct a thermal head that can print with less power than conventional substrates, and if the same power is used for printing, a thinner moisture retaining layer is required compared to conventional substrates, which improves thermal separation between dots. It becomes better and thermal tailing decreases. In addition, gel-like silica has high heat resistance and is suitable for use in thermal head substrates.
ざらに、本発明の製造方法によれば、簡易に均質なゲル
状シリカ層から成る保温層を得ることができる。In general, according to the manufacturing method of the present invention, it is possible to easily obtain a heat insulating layer made of a homogeneous gel-like silica layer.
第１図は印加電力とピーク温度の関係を示す線図、第２
図はサーマルヘッド用基板の一般的構造を示す断面図で
ある。
１ ・・・アルミナ基板、 ２ ・・・保温層。
特許出願人 沖電気工業株式会社
０ ０．５ １．０ １．５
２．Ｏｎ加電力
印〃ａ電力とと−ク温度
芋 ｌ 回
ブーマルヘッド用基職０−鎖的構盗
第 ２ 回Figure 1 is a diagram showing the relationship between applied power and peak temperature, Figure 2 is a diagram showing the relationship between applied power and peak temperature.
The figure is a sectional view showing the general structure of a thermal head substrate. 1...Alumina substrate, 2...Heat insulation layer. Patent applicant Oki Electric Industry Co., Ltd. 0 0.5 1.0 1.5
2. On applied power application〃a power and temperature 〃〃 times〃 times Boomal head basic position 0 - chain robbery 2nd time
Claims (1)
より形成したゲル状シリカを用いたことを特徴とするサ
ーマルヘッド用基板。 ２、少なくとも金属アルコキシドと水とを含む溶液をセ
ラミクス基板に塗布し、乾燥させる工程を含むことを特
徴とするサーマルヘッド用基板の製造方法。 ３、上記金属アルコキシドは、少なくともアルコキシシ
ランを含む一種の金属アルコキシドあるいは複数種の金
属アルコキシドを混合したものであることを特徴とする
特許請求の範囲第２項記載の方法。 ４、上記溶液がアルコール溶液であることを特徴とする
特許請求の範囲第２項記載の方法。 ５、上記溶液に塩酸、アンモニア等の、触媒を加え、こ
れによりアルコキシランの加水分解、重合を促進するこ
とを特徴とする特許請求の範囲第２項または第４項記載
の方法。 ６、上記溶液の塗布および乾燥から成る操作を複数回く
り返すことにより所望の膜厚を得ることを特徴とする特
許請求の範囲第２項記載の方法。[Claims] 1. A thermal head comprising a ceramic substrate and a heat insulating layer on the ceramic substrate, the heat insulating layer using gelled silica formed by hydrolysis and polymerization of metal alkoxide. board for. 2. A method for manufacturing a thermal head substrate, comprising the steps of applying a solution containing at least metal alkoxide and water to a ceramic substrate and drying the solution. 3. The method according to claim 2, wherein the metal alkoxide is one type of metal alkoxide containing at least an alkoxysilane or a mixture of multiple types of metal alkoxides. 4. The method according to claim 2, wherein the solution is an alcohol solution. 5. The method according to claim 2 or 4, characterized in that a catalyst such as hydrochloric acid or ammonia is added to the solution to promote hydrolysis and polymerization of the alkoxylan. 6. The method according to claim 2, wherein the desired film thickness is obtained by repeating the operation consisting of applying and drying the solution a plurality of times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089730A JPS63256460A (en) | 1987-04-14 | 1987-04-14 | Substrate for thermal head and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62089730A JPS63256460A (en) | 1987-04-14 | 1987-04-14 | Substrate for thermal head and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63256460A true JPS63256460A (en) | 1988-10-24 |
Family
ID=13978878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62089730A Pending JPS63256460A (en) | 1987-04-14 | 1987-04-14 | Substrate for thermal head and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63256460A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5122501A (en) * | 1991-05-24 | 1992-06-16 | Eastman Kodak Company | Inorganic-organic composite subbing layers for thermal dye transfer donor |
| US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
| US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
| US6858264B2 (en) | 2002-04-24 | 2005-02-22 | Micron Technology, Inc. | Chemical vapor deposition methods |
| US6926775B2 (en) | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
-
1987
- 1987-04-14 JP JP62089730A patent/JPS63256460A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5122501A (en) * | 1991-05-24 | 1992-06-16 | Eastman Kodak Company | Inorganic-organic composite subbing layers for thermal dye transfer donor |
| US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
| US7192487B2 (en) | 2002-02-22 | 2007-03-20 | Micron Technology, Inc. | Semiconductor substrate processing chamber and accessory attachment interfacial structure |
| US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
| US6858264B2 (en) | 2002-04-24 | 2005-02-22 | Micron Technology, Inc. | Chemical vapor deposition methods |
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