JPS63251166A - Wafer chuck - Google Patents

Wafer chuck

Info

Publication number
JPS63251166A
JPS63251166A JP62084962A JP8496287A JPS63251166A JP S63251166 A JPS63251166 A JP S63251166A JP 62084962 A JP62084962 A JP 62084962A JP 8496287 A JP8496287 A JP 8496287A JP S63251166 A JPS63251166 A JP S63251166A
Authority
JP
Japan
Prior art keywords
wafer
chuck
fluid
working fluid
chuck surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62084962A
Other languages
Japanese (ja)
Inventor
Masayasu Fujisawa
藤沢　政泰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62084962A priority Critical patent/JPS63251166A/en
Publication of JPS63251166A publication Critical patent/JPS63251166A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like

Abstract

PURPOSE:To have grinding of wafer with high precision by furnishing a chuck on its surface with a fluid supply means, which is to supply specified fluid, and a fluid exhaust means to exhaust the fluid. CONSTITUTION:Through the bearing action (action to receive load) with the static pressure based on the same principle as static pressure bearing, a wafer 7 is received on the chuck surface 8 allowing the working fluid 6 to flow onto the chuck surface 8. Because a gap 9 is produced between the wafer 7 and chuck through flowing of this working fluid 6 on the chuck surface 8, the wafer 7 can be supported without influence of dirt. Local bend of wafer 7 can be suppressed down to ignorable level by making fine the pitch of the supply and exhaust points for the working fluid 6 and by lessening the distance to produce pressure drop. The chuck surface 8 is formed rigid and can be processed into a plane with high precision, and accordingly the gap 9 is kept constant based on the principle of static pressure bearing, so that the wafer 7 can be supported on a flat plane, which should permit wafer grinding with high precision.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ＬＳＩ（大規模集積回路）等の作製用のＳＬ
（シリコン）　、ＧａＡｓ　（ガリウムヒ素）等から成
る半導体ウェハを研磨するために、半導体ウェハを保持
するウェハチャックに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an SL for manufacturing LSI (large scale integrated circuit), etc.
The present invention relates to a wafer chuck that holds a semiconductor wafer for polishing a semiconductor wafer made of (silicon), GaAs (gallium arsenide), or the like.

〔従来の技術〕[Conventional technology]

ＬＳＩの高集積化に伴い、高精度の半導体ウェハが要求
されている。ウェハの精度は、ウェハの研磨精度に影響
され、これに大きく影響を及ぼすのは、ウェハの支持精
度である。As LSIs become more highly integrated, highly accurate semiconductor wafers are required. The precision of the wafer is influenced by the precision of polishing the wafer, and this is largely influenced by the precision with which the wafer is supported.

第４図は、ウェハを支持する従来のウェハチャックを示
す概略断面図である（例えば、昭和５５年出願公開第１
１７６７号に記載されている。）。FIG. 4 is a schematic cross-sectional view showing a conventional wafer chuck that supports a wafer (for example, 1981 Application Publication No.
It is described in No. 1767. ).

図において、４７は半導体ウェハ、４８はウェハチャッ
クのチャック面、４４は真空ポンプ、５０はチャック面
４８に複数個形成され、真空ポンプ４４に接続された吸
引穴である。In the figure, 47 is a semiconductor wafer, 48 is a chuck surface of a wafer chuck, 44 is a vacuum pump, and 50 is a plurality of suction holes formed on the chuck surface 48 and connected to the vacuum pump 44.

従来のウェハチャックは、第４図に示すように、ウェハ
の研磨時、あるいはウェハの搬送時に、真空ポンプ４４
の吸引作用による吸引穴５０からの空気の吸引を利用し
て保持（チャック）している。このとき、チャック面４
８に形成されたの空気の吸引穴５０から、半導体ウェハ
の研磨剤、あるいは、研磨により生じたゴミ等も、空気
と共に、上記吸入穴５０から吸い込まれるため、チャッ
ク面４８側のウェハ面が汚れる。この研磨剤、ゴミ等が
、ウェハとチャック面４８との間に介在すると、ウェハ
が弾性変形し、ウェハ研磨後、チャックから外すと、ウ
ェハ面番兵複数個の窪み（ディンプル）が生じ、ウェハ
の品質を劣化させる。As shown in FIG. 4, the conventional wafer chuck uses a vacuum pump 44 when polishing a wafer or transporting a wafer.
It is held (chucked) by utilizing the suction of air from the suction hole 50 due to the suction action of. At this time, chuck surface 4
Polishing agent for the semiconductor wafer or dust generated by polishing is sucked together with air through the air suction hole 50 formed at 8, so that the wafer surface on the chuck surface 48 side becomes dirty. . If this abrasive, dust, etc. are present between the wafer and the chuck surface 48, the wafer will be elastically deformed, and when the wafer is removed from the chuck after polishing, a plurality of dimples will be formed on the wafer surface. degrade quality.

これに対処するため、従来のウェハチャックでは、ウェ
ハとチャック面との間に、例えば発泡ポリウレタン等か
ら成る軟かい弾性膜を介在させ。To deal with this, in conventional wafer chucks, a soft elastic film made of foamed polyurethane or the like is interposed between the wafer and the chuck surface.

両者の間に介在するゴミ等に起因する変形をこの弾性膜
で吸収するようにしている。This elastic membrane absorbs deformation caused by dust or the like interposed between the two.

あるいは、ウェハをチャック面上にワックス等を用いて
接着し、この接着層にそのゴミ等を吸収させ、ゴミ等の
影響が生じないようにしている。Alternatively, the wafer is bonded onto the chuck surface using wax or the like, and the adhesive layer absorbs the dust, etc., so that the influence of the dust and the like does not occur.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記従来技術は、ウェハとチャック面と
の間の弾性膜、あるいは接着層の厚さのばらつきが、研
磨後のウェハの厚さのばらつきを生じさせ、ウェハの研
磨精度を劣化させる最大の要因になっていた。However, in the above conventional technology, variations in the thickness of the elastic film or adhesive layer between the wafer and the chuck surface cause variations in the thickness of the wafer after polishing, which is the biggest factor that degrades the polishing accuracy of the wafer. It was a factor.

本発明の目的は、上記問題点を解決し、高平面度にウェ
ハを支持し、したがって、高精度にウェハを研磨できる
ウェハチャックを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer chuck that can solve the above problems, support a wafer with high flatness, and polish the wafer with high precision.

〔問題点を解決するための手段〕[Means for solving problems]

上記目的を達成するために、本発明のウェハチャックは
、チャック面上に、所定の流体が供給可能な流体供給手
段と、上記流体が排出可能な流体排出手段とを具備する
ことを特徴とする。In order to achieve the above object, the wafer chuck of the present invention is characterized by comprising, on the chuck surface, a fluid supply means capable of supplying a predetermined fluid, and a fluid discharge means capable of discharging the fluid. .

望ましい実施例では、上記流体供給手段は、細かいピッ
チの多数の穴によって構成し、上記流体排出手段は、上
記穴の間に形成された細かいピッチの多数の溝によって
構成する。流体としては、水等の液体、あるいは空気等
の気体を用いることができる。In a preferred embodiment, the fluid supply means comprises a number of finely pitched holes, and the fluid discharge means comprises a number of finely pitched grooves formed between the holes. As the fluid, a liquid such as water or a gas such as air can be used.

〔作用〕[Effect]

上記のような構成を有するので、本発明は、チャック面
上に流体を流すことにより、静圧軸受と同一原理の静圧
によるベアリング作用（荷重を受ける作用）により、ウ
ェハをチャック面上に受ける。この作動流体をチャック
面上に流すことにより、ウェハとチャックとの間にギャ
ップが生じるので、ゴミの影響を受けずにウェハを支持
できる。With the above configuration, the present invention allows a wafer to be received on the chuck surface by a bearing action (load receiving action) by static pressure, which is based on the same principle as a static pressure bearing, by flowing a fluid onto the chuck surface. . By flowing this working fluid onto the chuck surface, a gap is created between the wafer and the chuck, so the wafer can be supported without being affected by dust.

なお、静圧軸受では１作動流体の供給点と排出点との間
に圧力降下が生じ、その結果、圧力分布によってウェハ
が曲げられるが、供給点と排出点のピッチを細かくして
、圧力降下が生じる距離を小さくすることにより、ウェ
ハの局部的な曲がり量を無視しうる量（０，０１＃Ｉｍ
）以下にすることができる。チャック面は、通常、剛体
で構成し、高精度の平面に加工でき、したがって、静圧
軸受の原理から上記ギャップが一定になるので、ウェハ
を平担な面に支持でき、その結果、ウェハを高精度に研
磨できる。Note that in hydrostatic bearings, a pressure drop occurs between the supply point and discharge point of the working fluid, and as a result, the wafer is bent due to the pressure distribution. By reducing the distance at which the wafer occurs, the amount of local bending of the wafer can be ignored (0,01#Im
) can be as follows. The chuck surface is usually made of a rigid body and can be machined into a highly accurate flat surface. Therefore, due to the principle of hydrostatic bearings, the gap is constant, so the wafer can be supported on a flat surface, and as a result, the wafer can be Can be polished with high precision.

〔実施例〕〔Example〕

第１図（ａ）は１本発明の第１の実施例のウェハチャッ
クの概略断面図、第１図（ｂ）は、第１図（ａ）のウェ
ハチャックの上面図である。FIG. 1(a) is a schematic sectional view of a wafer chuck according to a first embodiment of the present invention, and FIG. 1(b) is a top view of the wafer chuck of FIG. 1(a).

図において、７は半導体ウェハ、８はチャック面、１は
チャック面８に一定のピッチで多数個形成された作動流
体の供給穴、２はチャック面８の流体供給穴２の間に一
定のピッチで多数本形成された作動流体の排出溝、６は
例えば、水、あるいは空気等の作動流体、３は作動流体
の供給ポンプ。In the figure, 7 is a semiconductor wafer, 8 is a chuck surface, 1 is a working fluid supply hole formed in large numbers at a constant pitch on the chuck surface 8, and 2 is a constant pitch between the fluid supply holes 2 on the chuck surface 8. 6 is a working fluid such as water or air, and 3 is a pump for supplying the working fluid.

９はチャック面８と半導体ウェハ７との間のギャップ、
４は吸引ポンプ、５はフィルタである。9 is a gap between the chuck surface 8 and the semiconductor wafer 7;
4 is a suction pump, and 5 is a filter.

本実施例のウェハチャックは、（ｂ）図の平面図からよ
く分かるように１作動流体の供給穴１が一定ピッチで多
数個チャック面８上に並べて設けられ、各供給穴１の間
に作動流体の排出溝２が格子状に設けられている。水等
の作動流体６は、供給ポンプ３から供給され、各供給穴
１からチャック面８上を経由してすぐ近くの各排出溝２
へ排出される。排出された流体は、吸引ポンプ４で吸引
された後、フィルタ５を通してゴミを除き、再び供給ポ
ンプ３に供給して、循環させて使う、なお、排出された
流体は、循環させて使わずに、破棄してもよい。The wafer chuck of this embodiment has a large number of supply holes 1 for one working fluid lined up at a constant pitch on the chuck surface 8, as clearly seen from the plan view in FIG. Fluid discharge grooves 2 are provided in a grid pattern. A working fluid 6 such as water is supplied from the supply pump 3 and passes from each supply hole 1 onto the chuck surface 8 to each nearby discharge groove 2.
is discharged to. After the discharged fluid is sucked by the suction pump 4, it passes through the filter 5 to remove dust, and is again supplied to the supply pump 3 for circulation and use. Note that the discharged fluid is not circulated and used. , may be discarded.

すなわち、本実施例では、ウェハ７は、このチャック而
８上を流れる作動流体６を介してチャック而８上に支持
され、この状態で、図示しないボリシング定盤を上から
降して、ウェハ７の研磨を行なう。That is, in the present embodiment, the wafer 7 is supported on the chuck 8 via the working fluid 6 flowing over the chuck 8, and in this state, a boring surface plate (not shown) is lowered from above to remove the wafer 7. Perform polishing.

作動流体６の供給穴１上の圧力は、供給圧ｐ。The pressure on the supply hole 1 of the working fluid 6 is supply pressure p.

に等しく、排出溝２上の圧力は、大気圧ｐｏ（使い捨て
にする場合）または吸引圧Ｐ０（＠環する場合）に等し
い（第３図に、作動流体の供給点と排出点との間におけ
る圧力分布を示す。）。, and the pressure on the discharge groove 2 is equal to the atmospheric pressure po (for disposable use) or the suction pressure P0 (for circular use). (shows pressure distribution).

したがって、ウェハ７は、次のδ（＋＋＋ｎ＋）だけ曲
げられる。Therefore, the wafer 7 is bent by the following δ(+++n+).

ただし、Ｅ：ウェハヤング率（ｋｇ／ｍａ”　）Ｖ：ウ
ェハポアソン比 ｒ：供給穴と排出溝の距離（ｍｍ） ｔ：ウェハ厚（ｍｍ） そこで、供給穴１と排出溝２との距離ｒを小さくするこ
とにより、δを無視し得る程度に小さくできる０例えば
、ウェハがＳｉ（シリコン）で、Ｅ＝　１８０００、ｖ
　＝０．３、ｔ＝０．４、Ｐ３＝５、Ｐ０＝１の場合、
δ＜１０−’にするには（１）式よりとすればよい。し
たがって、Ｓｉウェハを支持する場合、作動流体として
水を用い、供給穴１の直径を０．１ｍｍ、穴ピッチを１
．６ｍｍ　（”？０．８４Ｘ　２）　、排出溝２の幅を
０．５ｍｍ、深さを１＋＋＋＋＋＋にすることにより、
ウェハを、ゴミの影響もなく、チャックと同じ平面度０
　、２　ｔｎａ　／ウェハ直径１５０ｍｍで保持するこ
とができた。However, E: Wafer Young's modulus (kg/ma”) V: Wafer Poisson's ratio r: Distance between supply hole and discharge groove (mm) t: Wafer thickness (mm) Therefore, the distance r between supply hole 1 and discharge groove 2 is By reducing δ, δ can be made negligible.For example, if the wafer is Si (silicon), E = 18000, v
=0.3, t=0.4, P3=5, P0=1,
To make δ<10-', equation (1) may be used. Therefore, when supporting a Si wafer, water is used as the working fluid, the diameter of supply hole 1 is 0.1 mm, and the hole pitch is 1 mm.
．． 6mm ("?0.84X 2), the width of the discharge groove 2 is 0.5mm, and the depth is 1++++++++,
The wafer can be held at the same flatness as the chuck without being affected by dust.
, 2 tna/wafer diameter of 150 mm.

なお１作動流体の供給圧を吸引圧Ｐ、以下にすると、ウ
ェハがチャック面８から離れた場合、引き付ける作用も
あるので、チャックを下向きにしてもウェハの搬送は可
能となる。Note that if the supply pressure of the working fluid is lower than the suction pressure P, when the wafer separates from the chuck surface 8, there is also an attractive effect, so that the wafer can be transported even if the chuck is turned downward.

第２図は、第１図（ｂ）とは別の実施例のウェハチャッ
クの上面図である。すなわち、第１図（ｂ）では、流体
の排出溝２を供給穴１の間に格子状に設けたが、第２図
に示すように、−力方向のみに平行に設けてもよい。流
体の供給穴１および排出溝２の配置は、これらの実施例
に限定されない。FIG. 2 is a top view of the wafer chuck of another embodiment from that of FIG. 1(b). That is, in FIG. 1(b), the fluid discharge grooves 2 are provided in a grid pattern between the supply holes 1, but as shown in FIG. 2, they may be provided in parallel only to the -force direction. The arrangement of the fluid supply holes 1 and the discharge grooves 2 is not limited to these examples.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、ウェハを高平面
度で保持できるので、ウェハの高精度研磨が可能となる
。例えば、Ｓｉウェハでは平面度１戸以内が可能となり
、高集積ＬＳＩ用ウェハとして今まで不可能であったウ
ェハの量産を可能とすることができる。As described above, according to the present invention, the wafer can be held with a high degree of flatness, so that the wafer can be polished with high precision. For example, Si wafers can have a flatness of less than one flatness, making it possible to mass-produce wafers for highly integrated LSIs, which was previously impossible.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は、本発明の一実施例のウェハチャックの
概略断面図、第１図（ｂ）は、第１図（ａ）のウェハチ
ャックの上面図、第２図は、第１図（ａ）とは別の実施
例のウェハチャックの上面図、第３図は、本発明の一実
施例のウェハチャックにおける作動流体の供給点と排出
点との間の圧力分布を示す図、第４図は、従来の真空チ
ャックの概略断面図である。 １・・・流体供給穴 ２・・・流体排出溝 ３・・・供給ポンプ ４・・・吸引ポンプ ５・・・フィルタ兼タンク ６・・・作動流体 ７・・・半導体ウェハ ８・・・チャック面 ９・・・ギャップ 代理人弁理士　　中　村　純之助 −＞２　図 矛３図FIG. 1(a) is a schematic sectional view of a wafer chuck according to an embodiment of the present invention, FIG. 1(b) is a top view of the wafer chuck of FIG. 1(a), and FIG. FIG. 3 is a top view of a wafer chuck in an embodiment different from that shown in FIG. FIG. 4 is a schematic cross-sectional view of a conventional vacuum chuck. 1... Fluid supply hole 2... Fluid discharge groove 3... Supply pump 4... Suction pump 5... Filter/tank 6... Working fluid 7... Semiconductor wafer 8... Chuck Panel 9: Gap Agent Patent Attorney Junnosuke Nakamura -> 2 Figure 3

Claims (1)

【特許請求の範囲】 １、所定の流体が供給可能な流体供給手段と、上記流体
が排出可能な流体排出手段とをチャック面上に具備し、
上記流体のベアリング作用によりウェハを保持するよう
になっていることを特徴とするウェハチャック。 ２、上記流体供給手段が、多数の穴によって構成され、
上記流体排出手段が、上記穴の間に形成された多数の溝
によって構成されていることを特徴とする特許請求の範
囲第１項記載のウェハチャック。 ２、上記多数の穴と、上記多数の溝とが一定のピッチで
形成されていることを特徴とする特許請求の範囲第２項
記載のウェハチャック。[Claims] 1. A fluid supply means capable of supplying a predetermined fluid and a fluid discharge means capable of discharging the fluid are provided on the chuck surface,
A wafer chuck characterized in that the wafer is held by the bearing action of the fluid. 2. The fluid supply means is constituted by a large number of holes,
2. The wafer chuck according to claim 1, wherein said fluid discharge means is constituted by a plurality of grooves formed between said holes. 2. The wafer chuck according to claim 2, wherein the plurality of holes and the plurality of grooves are formed at a constant pitch.
JP62084962A 1987-04-07 1987-04-07 Wafer chuck Pending JPS63251166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62084962A JPS63251166A (en) 1987-04-07 1987-04-07 Wafer chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62084962A JPS63251166A (en) 1987-04-07 1987-04-07 Wafer chuck

Publications (1)

Publication Number Publication Date
JPS63251166A true JPS63251166A (en) 1988-10-18

Family

ID=13845254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62084962A Pending JPS63251166A (en) 1987-04-07 1987-04-07 Wafer chuck

Country Status (1)

Country Link
JP (1) JPS63251166A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
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JPH02232159A (en) * 1989-03-03 1990-09-14 Speedfam Co Ltd Method and device for surface polishing
EP0706857A1 (en) * 1994-10-11 1996-04-17 Ontrak Systems, Inc. Wafer polishing machine
EP0706855A3 (en) * 1994-10-11 1996-07-31 Ontrak Systems Inc Wafer polishing machine
US5692947A (en) * 1994-08-09 1997-12-02 Ontrak Systems, Inc. Linear polisher and method for semiconductor wafer planarization
EP0960694A1 (en) * 1998-05-29 1999-12-01 Nec Corporation Wafer polishing apparatus and backing pad for wafer polishing
EP1063055A2 (en) * 1999-06-25 2000-12-27 Applied Materials, Inc. Apparatus and method for chemical mechanical polishing
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
JP2002144180A (en) * 2000-11-09 2002-05-21 Nippon Electric Glass Co Ltd Device and method for suction-holding glass plate
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6666756B1 (en) 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US7025660B2 (en) 2003-08-15 2006-04-11 Lam Research Corporation Assembly and method for generating a hydrodynamic air bearing
WO2007037319A1 (en) * 2005-09-28 2007-04-05 Seikoh Giken Co., Ltd. Jig for polishing disc-like member, method for polishing rear surface of disc-like member and machine for polishing rear surface of disc-like member
JP2009521129A (en) * 2005-12-20 2009-05-28 コーニング インコーポレイテッド Polishing method of semiconductor structure on insulator
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US6416385B2 (en) 1997-11-12 2002-07-09 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
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EP1063055A2 (en) * 1999-06-25 2000-12-27 Applied Materials, Inc. Apparatus and method for chemical mechanical polishing
EP1063055A3 (en) * 1999-06-25 2003-08-27 Applied Materials, Inc. Apparatus and method for chemical mechanical polishing
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WO2007037319A1 (en) * 2005-09-28 2007-04-05 Seikoh Giken Co., Ltd. Jig for polishing disc-like member, method for polishing rear surface of disc-like member and machine for polishing rear surface of disc-like member
JP2009521129A (en) * 2005-12-20 2009-05-28 コーニング インコーポレイテッド Polishing method of semiconductor structure on insulator
JP2015119197A (en) * 2008-03-06 2015-06-25 株式会社荏原製作所 Polishing device and polishing method
US10328465B2 (en) * 2012-02-21 2019-06-25 Ebara Corporation Substrate processing apparatus and substrate processing method
US20130213437A1 (en) * 2012-02-21 2013-08-22 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method
US11192147B2 (en) 2012-02-21 2021-12-07 Ebara Corporation Substrate processing apparatus and substrate processing method
US10799917B2 (en) 2012-02-21 2020-10-13 Ebara Corporation Substrate processing apparatus and substrate processing method
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US9808836B2 (en) * 2013-06-28 2017-11-07 Ebara Corporation Substrate processing apparatus
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