JPS63238580A - X-ray quantity measuring instrument - Google Patents
X-ray quantity measuring instrumentInfo
- Publication number
- JPS63238580A JPS63238580A JP7180487A JP7180487A JPS63238580A JP S63238580 A JPS63238580 A JP S63238580A JP 7180487 A JP7180487 A JP 7180487A JP 7180487 A JP7180487 A JP 7180487A JP S63238580 A JPS63238580 A JP S63238580A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- thin film
- anode
- rays
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 18
- 239000010408 film Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＸ線ビームの光量測定装置に関し、特に、Ｘ線
露光におけるＸ線強度全測定する光量測定装置に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an X-ray beam light intensity measurement device, and more particularly to a light intensity measurement device that measures the total X-ray intensity during X-ray exposure.
（従来の技術）
従来から、シンクロトン放射によるＳＯＲ光を用いて半
導体ウェハーに微細加工を施す技術が知られている。こ
の際、 ＳＯＲ光の強度全知ることにより、半導体ウェ
ハーへのＳＯＲ光の照射量を決定している。即ち、半導
体ウェハーの微細加工において、半導体ウェハーに照射
されるＳＯＲ光の強度を知ることが不可欠である。(Prior Art) Conventionally, a technique has been known in which semiconductor wafers are subjected to microfabrication using SOR light generated by synchroton radiation. At this time, the amount of irradiation of the SOR light to the semiconductor wafer is determined by knowing the total intensity of the SOR light. That is, in microfabrication of semiconductor wafers, it is essential to know the intensity of SOR light irradiated onto the semiconductor wafer.
従来、 ＳＯＲ光の強度を知る際には、シンクロトロン
の蓄積電子ビームの電流値と観測されるＳＯＲ光の強度
とが一対一に対応していると仮定して。Conventionally, when determining the intensity of SOR light, it is assumed that there is a one-to-one correspondence between the current value of the synchrotron's accumulated electron beam and the observed intensity of SOR light.
ＳＯＲ光強度を求めるか、あるいは、 ＳＯＲ光を完全
に遮断してＳＯＲ光の強度全求めている。Either the SOR light intensity is determined, or the SOR light is completely blocked and the total SOR light intensity is determined.
（発明が解決しようとする問題点）
ところが、 ＳＯＲ元ｕ １ ｍ ｒａｄ以下の極めて
狭いバンドで放射されるから、実際には電子ビームの位
置により光ビームの強度が時間的に変動してしまい、従
って、前述の仮定によりＳＯＲ光の強度を正確に求める
ことができない。一方、 ＳＯＲＯＲ完全完全断してし
まうと、 ＳＯＲ光を利用できないという問題点がある
。(Problem to be Solved by the Invention) However, since it is emitted in an extremely narrow band with an SOR value of u 1 m rad or less, the intensity of the light beam actually fluctuates over time depending on the position of the electron beam. Therefore, the intensity of the SOR light cannot be determined accurately based on the above assumption. On the other hand, if SOROR is completely cut off, there is a problem that SOR light cannot be used.
（問題点を解決するための手段）
本発明による光量測定装置は、Ｘ線ビームを透過すると
ともにＸ線ビームの一部と光電変換を行うＸ線光電膜と
、Ｘ線ビームが通過する通路が規定され、Ｘ線光電膜か
ら放出される光電子を補獲する光電子捕獲手段とを有し
、光電子捕獲手段によって補獲された電子の量に基づい
てＸ線ビームの光量を測定するようにしたことを特徴と
している。(Means for Solving the Problems) The light amount measuring device according to the present invention includes an X-ray photoelectric film that transmits an X-ray beam and performs photoelectric conversion with a part of the X-ray beam, and a path through which the X-ray beam passes. and photoelectron capture means for capturing photoelectrons emitted from the X-ray photoelectric film, and the light intensity of the X-ray beam is measured based on the amount of electrons captured by the photoelectron capture means. It is characterized by
（実施例） 以下本発明に実施例によって説明する。(Example) The present invention will be explained below using examples.
第１図全参照して、シンクロトロン放射によるＳＯＲ光
の通路には９元電子放出薄膜１が配置され。Referring to FIG. 1, a nine-element electron emitting thin film 1 is disposed in the path of SOR light generated by synchrotron radiation.
この光電子放出薄膜１の後段には、 ＳＯＲ光の通路を
規定する円筒形状のアノード２が配設されている。この
アノード２の後側にはＸ線露光装置３が配置されている
。A cylindrical anode 2 that defines the path of the SOR light is disposed downstream of the photoelectron emitting thin film 1. An X-ray exposure device 3 is arranged behind the anode 2 .
光電子放出薄膜１とアノード２には図示のように高電圧
発生装置４により直流高電圧が印加されている。一方ア
ノード２には増幅器（プリアンプ）５が接続されて一＠
力このプリアンプ５は判別器（ディスクリミネータ）６
に接続されている。A high DC voltage is applied to the photoelectron emitting thin film 1 and the anode 2 by a high voltage generator 4 as shown in the figure. On the other hand, an amplifier (preamplifier) 5 is connected to the anode 2.
This preamplifier 5 is a discriminator 6
It is connected to the.
Ｘ線ビームは光電子放出薄膜１によって一部吸収されて
、光電子に変換されるが、大半のＸ線ビームは光電子放
出薄板１を透過する。つまり、光電子放出薄膜１はＸ線
ビームの大半が透過する膜厚であり、しかも光電子全放
出し易い物質である。A portion of the X-ray beam is absorbed by the photoelectron emission thin film 1 and converted into photoelectrons, but most of the X-ray beam is transmitted through the photoelectron emission thin plate 1. In other words, the photoelectron emitting thin film 1 has a thickness that allows most of the X-ray beam to pass through it, and is a material that easily emits all photoelectrons.
光電子放出薄膜１から放出された光電子はアノード２に
集められ、この結果、アノード２から光電子放出薄膜１
に向う電流が流れる。この電流の大きさは光電子放出薄
膜１から放出される光電子に比例する。つまり、Ｘ線ビ
ームの光量に比例する。Photoelectrons emitted from the photoelectron emitting thin film 1 are collected at the anode 2, and as a result, the photoelectrons emitted from the photoelectron emitting thin film 1 are transferred from the anode 2 to the anode 2.
A current flows towards. The magnitude of this current is proportional to the photoelectrons emitted from the photoelectron emitting thin film 1. In other words, it is proportional to the amount of light of the X-ray beam.
アノード２に補獲された電子、即ち、アノード２の出力
電流は例えば、積分器として作用するプリアンプ（積分
型プリアンプ）５に入力され、露光期間中積分される。The electrons captured by the anode 2, ie, the output current of the anode 2, are input to, for example, a preamplifier (integrating preamplifier) 5 that acts as an integrator, and are integrated during the exposure period.
この結果はディスクリミネータ６に入力されて、光量が
判別される。つ葦り。This result is input to the discriminator 6 to determine the amount of light. Tsureed.
ディスクリミネータ６は必要とする露光量に達したこと
をプリアンプ５に蓄積された荷電量で知る。The discriminator 6 knows from the amount of charge accumulated in the preamplifier 5 that the required exposure amount has been reached.
一方、光量の時間的変動を測定する場合には、アノード
２の出力を微分型のプリアンプに結合して。On the other hand, when measuring temporal fluctuations in the amount of light, the output of the anode 2 is coupled to a differential preamplifier.
微分型のプリアンｆ５の出力によりディスクリミネータ
６は時間的変動を記録する。The discriminator 6 records temporal fluctuations using the output of the differential preamp f5.
光電子放出薄膜１を透過したＸ線ビームはアノード２に
規定された通路を通ってＸ線露光装置４に至る。The X-ray beam transmitted through the photoelectron emitting thin film 1 passes through a path defined by the anode 2 and reaches the X-ray exposure device 4 .
ところで、光電子放出薄膜１からの放出光電子量が少な
い場合には、第２図に示すように１元電子放出薄膜１と
アノード２との間には環状のダイノード７が配置され、
光電子放出薄膜１からの光電子をダイノード７に衝突さ
せて、二次電子を放出しつつ二次電子を増倍させ、この
二次電子をアノード２で受けるようにすればよい。なお
、この場合１元電子放出薄膜１を透過したＸ線ビームは
ダイノード７及びアノード２で規定される通路を通って
Ｘ＠露光装置に至る
なお、Ｘ線ビームの通路（Ｘ線ビームライン）は通常高
真空中に置かれるが、この通路に気体を充填してもよく
、この場合には、気体による電子増倍作用を利用するこ
とができる。By the way, when the amount of photoelectrons emitted from the photoelectron emitting thin film 1 is small, as shown in FIG.
The photoelectrons from the photoelectron emitting thin film 1 may be made to collide with the dynode 7 to emit and multiply the secondary electrons, and the anode 2 may receive the secondary electrons. In this case, the X-ray beam that has passed through the one-element electron-emitting thin film 1 passes through the path defined by the dynode 7 and the anode 2 and reaches the X@exposure device.The path of the X-ray beam (X-ray beam line) is Although it is usually placed in a high vacuum, this passage may be filled with gas, and in this case, the electron multiplication effect of the gas can be utilized.
また１例えば１元電子放出薄膜として、厚さ１０μｍの
カーボン膜を用いた場合＝ ６５０ ＭｅＶの’を子ビ
ームで軌道半径５０ｃｒｎのシンクロトロンからのＳＯ
Ｒ光は、エネルギーにして約５７％が透過する。同様に
厚さ２μｍのカーボン膜では約８０チが透過する。例え
ば、３００ｍＡの蓄積電予電することが可能である。For example, if a carbon film with a thickness of 10 μm is used as a one-element electron emitting thin film, SO of = 650 MeV from a synchrotron with an orbital radius of 50 crn is used as a child beam.
Approximately 57% of the energy of the R light is transmitted. Similarly, a carbon film with a thickness of 2 μm transmits about 80 inches. For example, it is possible to pre-charge a stored charge of 300 mA.
（発明の効果）
以上説明したように本発明によれば、Ｘ線ビームを遮断
することなく、即ち、Ｘ線ビームを透過させて、Ｘ線ビ
ームの光量全測定できるから、Ｘ線露光の際、定量的に
露光を行うことができる。(Effects of the Invention) As explained above, according to the present invention, the total amount of light of the X-ray beam can be measured without blocking the X-ray beam, that is, by transmitting the X-ray beam. , quantitative exposure can be performed.
第１図は本発明によるＸ蔵元量測定装置の一実施例全概
略的に示す図、第２図は本発明によるＸ線光量測定装置
の他の実施例の要部を概略的に示す図である。
１・・・光電子放出薄膜、２・・・アノード、３・・・
Ｘ線露光装置、４・・・高電圧発生装置、５・・・プリ
アンプ。
６・・・ディスクリミネータ、７・・・ダイノード。
第１図
第２図FIG. 1 is a diagram schematically showing an entire embodiment of the X-ray amount measuring device according to the present invention, and FIG. 2 is a diagram schematically showing the main parts of another embodiment of the X-ray light amount measuring device according to the present invention. be. 1... Photoelectron emission thin film, 2... Anode, 3...
X-ray exposure device, 4... high voltage generator, 5... preamplifier. 6... Discriminator, 7... Dynode. Figure 1 Figure 2
Claims (1)
と光電変換を行うＸ線光電膜と、前記透過したＸ線ビー
ムが通過する通路が規定され、前記Ｘ線光電膜から放出
される光電子を捕獲する光電子捕獲手段とを有し、該光
電子捕獲手段によって捕獲された電子の量に基づいて前
記Ｘ線ビームの光量を測定するようにしたことを特徴と
するＸ線光量測定装置。1. An X-ray photoelectric film that transmits an X-ray beam and performs photoelectric conversion with a part of the X-ray beam, and a path through which the transmitted X-ray beam passes is defined, and is emitted from the X-ray photoelectric film. 1. An X-ray light intensity measuring device comprising: a photoelectron capture means for capturing photoelectrons, and the light intensity of the X-ray beam is measured based on the amount of electrons captured by the photoelectron capture means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180487A JPS63238580A (en) | 1987-03-27 | 1987-03-27 | X-ray quantity measuring instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7180487A JPS63238580A (en) | 1987-03-27 | 1987-03-27 | X-ray quantity measuring instrument |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63238580A true JPS63238580A (en) | 1988-10-04 |
Family
ID=13471119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7180487A Pending JPS63238580A (en) | 1987-03-27 | 1987-03-27 | X-ray quantity measuring instrument |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63238580A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382984A (en) * | 1989-06-05 | 1991-04-08 | General Electric Co <Ge> | Focusing multi-element detector for x rays exposure control |
| JP2004508544A (en) * | 2000-08-31 | 2004-03-18 | ザ ユニバーシティ オブ アクロン | Multi-density multi-atomic number detector media with electron multiplier for imaging |
-
1987
- 1987-03-27 JP JP7180487A patent/JPS63238580A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382984A (en) * | 1989-06-05 | 1991-04-08 | General Electric Co <Ge> | Focusing multi-element detector for x rays exposure control |
| JP2004508544A (en) * | 2000-08-31 | 2004-03-18 | ザ ユニバーシティ オブ アクロン | Multi-density multi-atomic number detector media with electron multiplier for imaging |
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