JPS63237346A - Lamp for ultraviolet light source - Google Patents
Lamp for ultraviolet light sourceInfo
- Publication number
- JPS63237346A JPS63237346A JP7341587A JP7341587A JPS63237346A JP S63237346 A JPS63237346 A JP S63237346A JP 7341587 A JP7341587 A JP 7341587A JP 7341587 A JP7341587 A JP 7341587A JP S63237346 A JPS63237346 A JP S63237346A
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet light
- light source
- mercury
- lamp
- amalgam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 22
- 229910000497 Amalgam Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 3
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 3
- 239000011734 sodium Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000032683 aging Effects 0.000 abstract 3
- -1 e.g. Chemical compound 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Discharge Lamp (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）発明の利用分野
本発明は、半導体製品作製技術分野における半導体被膜
または絶縁物被膜等の薄膜作製技術分野にて利用可能な
紫外光源用ランプに関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Application of the Invention The present invention relates to a lamp for an ultraviolet light source that can be used in the field of manufacturing thin films such as semiconductor films or insulating films in the field of semiconductor product manufacturing technology.
（ロ）従来の技術
産業分野特にセラミックスコートまたは半導体装置作製
技術分野において使用されている従来の紫外光源用ラン
プとしては、主として高圧水銀ランプ、低圧水銀ランプ
がある。本発明は、特にこの低圧水銀ランプを用いた光
処理装置例えば光ＣＶＤ装置、光クリーニング（ＵＶク
リーニング）装置、光プラズマＣＶＤ装置用光源の改良
およびその使用方法に関するものである。(b) Conventional technology Conventional ultraviolet light source lamps used in the industrial field, particularly in the ceramic coating or semiconductor device manufacturing technology field, mainly include high-pressure mercury lamps and low-pressure mercury lamps. The present invention particularly relates to improvements in light sources for photoprocessing devices such as photoCVD devices, photocleaning (UV cleaning) devices, and photoplasma CVD devices using this low-pressure mercury lamp, and methods for using the same.
従来の低圧水銀ランプは光源用バルブ内にアルゴンガス
を数Ｔｏｒｒの圧力で封入し、同時に水銀を封入したも
のであった。In conventional low-pressure mercury lamps, argon gas is sealed in the light source bulb at a pressure of several Torr, and mercury is also sealed at the same time.
そしてバルブ内に一対のアーク放電を発生させる電極と
、この電極よりガラスバルブを貫通して導出した外部電
極端子より一般に商用周波数（５０〜６０ Ｈｚ）の交
流電力を印加しアーク放電をさせている。この外部より
投入された電力により水銀原子は励起され、様々なエネ
ルギー準位を持つ励起状態の水銀原子となる。さらにこ
の励起状態の原子が石英バルブの内壁または原子同志の
衝突により、もとの準位に戻る。その際、２５４ｎｍの
波長の発光強度が一番強く、その次に１８５ｎａ＋付近
の波長の発光強度となっている。Then, AC power is generally applied at a commercial frequency (50 to 60 Hz) through a pair of electrodes that generate arc discharge inside the bulb and an external electrode terminal that extends from these electrodes through the glass bulb to cause arc discharge. . The mercury atoms are excited by this externally applied electric power, and become mercury atoms in an excited state with various energy levels. Furthermore, the atoms in this excited state return to their original level due to collisions with the inner wall of the quartz bulb or with each other. At this time, the emission intensity at a wavelength of 254 nm is the strongest, followed by the emission intensity at a wavelength around 185 na+.
しかしながら最近半導体作製技術分野において、光処理
装置、特に光ＣＶＤ法（紫外光により反応性気体を分解
、反応せしめて被膜形成を行う）、ＵＶクリーニング（
基板表面を紫外光で照射し汚物を除去する）が注目され
ている０例えば、光ＣＶＤ法で半導体膜を作製する方法
において５ｉｎＨゎ。However, recently in the field of semiconductor manufacturing technology, optical processing equipment, especially optical CVD method (decomposing and reacting reactive gases with ultraviolet light to form a film), UV cleaning (
For example, irradiating the surface of a substrate with ultraviolet light to remove contaminants is attracting attention. For example, in a method of manufacturing a semiconductor film using a photo-CVD method, it is possible to remove contaminants by irradiating the substrate surface with ultraviolet light.
（ｎ ”Ｌ２＋３＋・・）のシラン類を紫外光にて分解
反応させて半導体膜を形成する。その時、短波長特に１
８５ｎ＋ｍ付近の波長の紫外光がとくに前記反応に有効
であるため、従来の紫外光源を用いた反応速度が遅い光
ＣＶＤ法においては、この１８５ｎｍ付近の紫外光強度
をより強くすることが求められていた。A semiconductor film is formed by decomposing and reacting silanes (n ”L2+3+...) with ultraviolet light.
Since ultraviolet light with a wavelength around 85 nm+m is particularly effective for the above reaction, in the photoCVD method, which uses a conventional ultraviolet light source and has a slow reaction rate, it is required to increase the intensity of ultraviolet light around 185 nm. Ta.
この問題を解決する方法として、本出願人により印加電
力として、高周波電力を加え、１８５ｎｍの波長の光強
度を増した紫外光源ランプ（特願昭６１年１３４０７４
号）がある、この発明は従来の紫外光源ランプに比べて
、１８５ｎｓ＋の強度が５倍以上得られ、非常に有益な
物であった。As a method to solve this problem, the present applicant proposed an ultraviolet light source lamp (patent application No. 134074, published in 1986), in which high-frequency power was added to the applied power to increase the light intensity of the wavelength of 185 nm.
No.), this invention was extremely useful as it was able to obtain an intensity of 185 ns+ more than five times that of conventional ultraviolet light source lamps.
しかしながら、この場合は点燈開始後数十時間程度で、
１８５ｎｍ付近の光が特に発光強度が弱くなるという問
題が発生した。However, in this case, about a few dozen hours after the lights start turning on,
A problem occurred in that the emission intensity of light around 185 nm was particularly weak.
その現象を第１図曲線（１）に示す。The phenomenon is shown in curve (1) in Figure 1.
第１図は、紫外光ランプの１８５ｎｍの光の強度の経時
変化を示す。FIG. 1 shows the change over time in the intensity of 185 nm light from an ultraviolet lamp.
本願発明者らは、この原因を鏡意努力した結果、光源ラ
ンプに封入されている水銀と、ランプ電極の構成元素と
のアマルガムが光ランプ管壁に付着している為であるこ
とをつきとめた。The inventors of the present application have made efforts to determine the cause of this problem, and have found that it is due to an amalgam of mercury sealed in the light source lamp and constituent elements of the lamp electrodes adhering to the wall of the light lamp tube. .
その証拠を第２図に示す。The proof is shown in Figure 2.
第２図曲線は（３）は、新品のランプに対する劣化後の
ランプの管壁の相対分光透過率を示す。Curve (3) in FIG. 2 shows the relative spectral transmittance of the tube wall of a deteriorated lamp with respect to a new lamp.
同図曲線（３）に示されているように、短波長紫外領域
の透過率が劣化後では減少し、特に１８５ｎｍ付近で著
しく透過率が減少していることが判明した。As shown in curve (3) in the same figure, it was found that the transmittance in the short wavelength ultraviolet region decreased after deterioration, and particularly in the vicinity of 185 nm, the transmittance decreased significantly.
この原因としては、水銀または水銀アマルガムがランプ
管壁に付着しているため、ランプで発光された１８５ｎ
ｍ付近の光がこの管壁に付着した水銀または水銀アマル
ガムに吸収されるため、１８５ｎｍ付近の光が弱くなる
のであった。The cause of this is that mercury or mercury amalgam is attached to the lamp tube wall, which causes the 185 nm emitted by the lamp to
Since light around 185 nm is absorbed by mercury or mercury amalgam attached to the tube wall, light around 185 nm becomes weak.
（ハ）発明の構成
本発明はこれら従来の問題点を解決するものであり、紫
外光源バルブに設けられた電力投入用電極がアルミニュ
ーム、ナトリウム等水銀とアマルガムを構成する金属を
１％以上含まないことを特徴とするものである。(C) Structure of the Invention The present invention solves these conventional problems, and the power input electrode provided in the ultraviolet light source bulb contains 1% or more of metals constituting mercury and amalgam, such as aluminum and sodium. It is characterized by the fact that there is no
本来ならこれらアマルガムを構成する金属を全く含まな
い方が好ましいが、現実的に全く含まないということは
不可能であり、本発明者らが実験を行ったところ、１％
程度含有しても１８５ｎｍ付近の光強度の低下が極めて
少ないため、現実的に可能な１％以上含まない金属を電
極として用いることを特徴としている。Normally, it would be preferable for the amalgam to contain no metals at all, but in reality it is impossible to do so completely, and the inventors conducted an experiment and found that 1%
Even if the metal is contained to a certain extent, the decrease in the light intensity around 185 nm is extremely small, so the electrode is characterized by using a metal that does not contain more than 1%, which is practically possible.
一般に紫外光源ランプ内部の放電の陽光柱部分において
、電気エネルギーにより活性化された励起種は内部の電
位差にしたがって、ランプ管壁へ移動し、管壁付近にお
いて電子と結合しこの際に紫外光を発光して元の水銀と
なる。Generally, in the positive column of discharge inside an ultraviolet light source lamp, excited species activated by electrical energy move to the lamp tube wall according to the internal potential difference, combine with electrons near the tube wall, and at this time emit ultraviolet light. It emits light and becomes the original mercury.
このように、水銀励起種はランプ管壁表面付近において
再結合し紫外光を発光していた。このため、。In this way, the mercury-excited species recombined near the lamp tube wall surface and emitted ultraviolet light. For this reason,.
内部に発生した電位差に従うて水銀ランプ管壁にぶつか
り一部は水銀蒸気として再びランプ中に飛散してゆ（が
、一部はそのままランプ管壁に付着した状態で１８５
ｎｍの光を吸収していた。Due to the potential difference generated inside the mercury lamp, some of it hits the wall of the lamp tube and scatters back into the lamp as mercury vapor (but some of it remains attached to the wall of the lamp tube and remains for 185 minutes.
It was absorbing nm light.
この時同時に、電極部分もスパッタされその電極材料に
含まれるアルミニュームがランプ中に飛散し、水銀とア
マルガムを構成し、同様にランプ管壁に付着し１８５ｎ
ｍの光を吸収するためランプ全体として１８５ｎｍの光
の発光を弱めていた。At the same time, the electrode part is also sputtered, and the aluminum contained in the electrode material scatters into the lamp, forming an amalgam with mercury, which also adheres to the lamp tube wall and becomes 185n.
In order to absorb 185 nm light, the lamp as a whole weakened the emission of 185 nm light.
そのため本発明は、水銀ランプ管壁に付着することを防
止することではなく、水銀アマルガムが付着することを
防ぎ１８５ｎｍの光が経時変化により弱くなりに（くす
ることを特徴とする。Therefore, the present invention is characterized not by preventing mercury amalgam from adhering to the wall of a mercury lamp tube, but by preventing mercury amalgam from adhering and causing the 185 nm light to weaken over time.
本発明の構成を有した紫外光源ランプの１８５ｎｍの発
光強度の経時変化を第１図曲線（２）に示す。Curve (2) in FIG. 1 shows the change over time in the emission intensity at 185 nm of the ultraviolet light source lamp having the configuration of the present invention.
同曲線（２）に示す如く、時間とともに若干光光強が弱
くなっているが、従来ランプ（１）に比べその程度は非
常に少ない。As shown in curve (2), the light intensity slightly weakens over time, but the extent of this is very small compared to the conventional lamp (1).
（ニ）効果
以上示したように本発明は、放電電極材料としてアルミ
ニューム、ナトリウム等水銀とアマルガムを構成する金
属を１％以上含まない物を使用するだけで、１８５ｎｍ
の波長の光強度が経時変化でおわくなりにくくなり、従
来ランプに比べ紫外光強度が強く劣化しにくい紫外光ラ
ンプとすることができた。(d) Effects As shown above, the present invention is capable of achieving a 185 nm
The light intensity of the wavelength becomes less likely to fade due to changes over time, making it possible to create an ultraviolet light lamp that has stronger ultraviolet light intensity and is less likely to deteriorate compared to conventional lamps.
これにより、半導体製造装置等に１８５ｎｍの光強度の
強い寿命の長い紫外光源を提供でき、半導体被膜作製の
処理速度を速めることが可能となった。This makes it possible to provide a long-life ultraviolet light source with strong light intensity at 185 nm to semiconductor manufacturing equipment, etc., and to increase the processing speed of semiconductor film production.
第１図は、従来ランプの１８５ｎｏ＋の光の劣化の様子
を示す。
第２図は、ランプの相対分光透過率を示すグラフである
。FIG. 1 shows how the 185no+ light of a conventional lamp deteriorates. FIG. 2 is a graph showing the relative spectral transmittance of the lamp.
Claims (1)
源ランプであって、前記バルブ内に設けられた電力投入
用電極は、アルミニューム、ナトリウム等水銀とアマル
ガムを構成する金属を１％以上含まないことを特徴とす
る紫外光源用ランプ。 ２、特許請求の範囲第１項において、前記紫外光源ラン
プには、高周波電力を印加して発光させることを特徴と
する紫外光源用ランプ。[Scope of Claims] 1. An ultraviolet light source lamp in which at least mercury is sealed in the light source bulb, and the power input electrode provided in the bulb is made of metal such as aluminum or sodium that constitutes the mercury and the amalgam. An ultraviolet light source lamp characterized by containing no more than 1% of 2. The ultraviolet light source lamp according to claim 1, wherein the ultraviolet light source lamp is caused to emit light by applying high frequency power to the ultraviolet light source lamp.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7341587A JPS63237346A (en) | 1987-03-26 | 1987-03-26 | Lamp for ultraviolet light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7341587A JPS63237346A (en) | 1987-03-26 | 1987-03-26 | Lamp for ultraviolet light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63237346A true JPS63237346A (en) | 1988-10-03 |
Family
ID=13517549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7341587A Pending JPS63237346A (en) | 1987-03-26 | 1987-03-26 | Lamp for ultraviolet light source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63237346A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844679B1 (en) | 1999-10-18 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Mercury lamp, lamp unit, method for producing mercury lamp and electric lamp |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149645A (en) * | 1983-02-14 | 1984-08-27 | Toshiba Corp | Fluorescent lighting apparatus |
-
1987
- 1987-03-26 JP JP7341587A patent/JPS63237346A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59149645A (en) * | 1983-02-14 | 1984-08-27 | Toshiba Corp | Fluorescent lighting apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6844679B1 (en) | 1999-10-18 | 2005-01-18 | Matsushita Electric Industrial Co., Ltd. | Mercury lamp, lamp unit, method for producing mercury lamp and electric lamp |
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