JPS6323128A - Optical space modulating element - Google Patents
Optical space modulating elementInfo
- Publication number
- JPS6323128A JPS6323128A JP16732986A JP16732986A JPS6323128A JP S6323128 A JPS6323128 A JP S6323128A JP 16732986 A JP16732986 A JP 16732986A JP 16732986 A JP16732986 A JP 16732986A JP S6323128 A JPS6323128 A JP S6323128A
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- JP
- Japan
- Prior art keywords
- film
- layer
- crystal
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- oriented
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000010453 quartz Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 15
- 238000010030 laminating Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 31
- 239000010409 thin film Substances 0.000 abstract description 4
- 229910052798 chalcogen Inorganic materials 0.000 abstract description 2
- 150000001787 chalcogens Chemical class 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- -1 GeC Inorganic materials 0.000 abstract 1
- 229910021480 group 4 element Inorganic materials 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000012780 transparent material Substances 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 230000010365 information processing Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- WVEIBSXNFJMONP-UHFFFAOYSA-N [Ta].[K] Chemical compound [Ta].[K] WVEIBSXNFJMONP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 description 1
- 101100194003 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) rco-3 gene Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明は、光情報処理、光コンピユーテイング等に用い
られる光空間変調素子に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to an optical spatial modulation element used in optical information processing, optical computing, and the like.
（従来技術）
光空間変調素子は、実時間処理、実時間パターン認識シ
ステム、高速画像処理、ロボットアイ等の光情報処理や
光コンビューテングにおいて、印刷物や風景等のインコ
ヒーレントな画像情報をコヒーレント光で扱える形に変
換したり、光情報の並列入力、並列演算処理をおこなう
ための素子として多くの提案がなされ、光情報処理技術
のキイデバイスとして今後の発展が期待されている。(Prior art) Optical spatial modulation elements are used to coherently convert incoherent image information such as printed matter and landscapes in optical information processing and optical computing such as real-time processing, real-time pattern recognition systems, high-speed image processing, and robot eyes. Many proposals have been made as elements for converting optical information into a form that can be handled, parallel input of optical information, and parallel arithmetic processing, and future development is expected as a key device in optical information processing technology.
従来、光空間変調素子としては、ポッケルス効果を有す
るＢＳＯ（Ｂｉ＋ｚＳｉＯｚｏ）などの光伝導性強誘電
体結晶の薄片を絶縁層で包み、両端に透明電極をつけた
ＰＲＯＭ （Ｐｏｃｋｅｌｓ Ｒｅａｄ−Ｏｕｊ
Ｏｐｔ、ｉｃａｌＭｏｄｕｌａｊｏｒ）や、Ｓｉ、 Ｃ
ｄＳ、 ＺｎＳ等の光伝導層と光変調効果を有する液晶
とを積層タイプにした液晶ライトバルブ、そして、Ｃｄ
Ｓ、 ＺｎＳ等の光伝導体とＤＫＤＰ （ＫＤｚＰ０４
）やＢ１４Ｔｉ２０ｔ２の強誘電体結晶も一体化し、電
気光学効果を利用する素子、例えばＤＫＤＰを用いるフ
ォトタイタス、さらに２次電子倍増効果をもつＭＣＰと
ＬｉＮｂＯ３，ＬｉＴａ０う等の電気光学結晶とを祖み
合わせたＭＳＬＭなどが知ら九でいる。Conventionally, as an optical spatial modulation element, a PROM (Pockels Read-Ouj
Opt, ical module), Si, C
A liquid crystal light valve in which a photoconductive layer such as dS or ZnS and a liquid crystal having a light modulation effect are laminated, and a Cd
Photoconductors such as S, ZnS and DKDP (KDzP04
) and B14Ti20t2 ferroelectric crystals were integrated, creating elements that utilize the electro-optic effect, such as phototitus using DKDP, and electro-optic crystals such as MCP and LiNbO3, LiTa0, etc., which have a secondary electron doubling effect. I don't know much about the combined MSLMs.
しかし、上記ＢＳＯを用いた光空間変調素子（ＰＲＯＭ
等）は、その駆動電圧が２ＫＶと非常に高く、また画像
書込み光も水銀燈やＸｅ燈を必要とし、実際に光情報処
理システムに組込み時に問題が残る。−方、液晶タイプ
の光空間変調素子（液晶ライトバルブ等）では、 ＢＳ
Ｏを用いた光空間変調素子に比して駆動電圧はＩＯＶ以
内と低いが、液晶を用いているため応答時間が遅く１画
像処理システムとして利用した時に高速処理が可能とい
う光空間変調素子としての本来の目的を失なう可能性が
ある。However, the optical spatial modulator (PROM) using the above BSO
etc.), its driving voltage is extremely high at 2 KV, and the image writing light requires a mercury lamp or a Xe lamp, which poses a problem when actually incorporated into an optical information processing system. -On the other hand, in liquid crystal type light spatial modulation elements (liquid crystal light valves, etc.), BS
Compared to optical spatial modulators using O, the driving voltage is lower, within IOV, but since it uses liquid crystal, the response time is slow, making it possible to perform high-speed processing when used as an image processing system. You may lose your original purpose.
また、半波長電圧低減のために強誘電体のキューリー点
近くまで冷却して使用するＤＫＤＰ、を用いたフォトタ
イタスでは、ＤＫＤＰのキューリー点が一５０℃と室温
より低いため、寒剤や冷却器等で冷却して使用しなけれ
ばならないという欠点があり、さらにＬｉＮｂＯ３等の
電気光学結晶を用いたＭＳＬＭ光空間変調素子では高感
度であるという特徴は有するが解像力が十分でないと同
時に応答時間が遅いという欠点を有している。In addition, in PhotoTitus, which uses DKDP, which is cooled to near the Curie point of the ferroelectric material in order to reduce half-wave voltage, since the Curie point of DKDP is 150°C, which is lower than room temperature, it is necessary to use cryogens and coolers. MSLM optical spatial modulators using electro-optic crystals such as LiNbO3 have the disadvantage of having to be cooled before use, and although they have the feature of high sensitivity, they do not have sufficient resolution and have slow response times. It has drawbacks.
また、従来の光空間変調素子に用いられるＢＳＯやＤＫ
ＤＰ及びし１ＮｂＯ等の強誘電体材料はバルク単結晶を
切断、研磨して得られたウェハーを使用しているため厚
みの限定を受け、解像力の向上を図りに＜＜、希望材料
の良質なバルク単結晶の育成も困難なことから半波長電
圧の低減も類しい、また。In addition, BSO and DK used in conventional optical spatial modulation elements
Since ferroelectric materials such as DP and 1NbO are made from wafers obtained by cutting and polishing bulk single crystals, their thickness is limited. Since it is difficult to grow bulk single crystals, the reduction in half-wavelength voltage is also similar.
大型単結晶の育成が困難なことからウェハー面積が限定
されるため記録容量に制限が有るなど、かなりの問題点
を有していた。This has had considerable problems, such as the difficulty in growing large single crystals, which limits the wafer area, which limits the recording capacity.
（目 的）
本発明は、上記従来技術による問題点を解決し、２次元
情報書込み光の選択の自由度を向上させると共に、半波
長電圧の低減、応答速度の向上等の光空間変調素子とし
ての機能の拡大を図るとともに、素子の大面積化による
記録容量の増大等の、高機能で低コストな光空間変調素
子を提供することを目的とする。(Purpose) The present invention solves the problems caused by the above-mentioned prior art, improves the degree of freedom in selecting a two-dimensional information writing light, and provides an optical spatial modulator that reduces half-wave voltage, improves response speed, etc. It is an object of the present invention to provide a high-performance, low-cost optical spatial modulation device that can expand the functions of the device and increase the recording capacity by increasing the area of the device.
（構 成）
本発明は、上記の目的を達成させるため、単結晶基板又
は石英、ガラス等のガラス系基板上に、単結晶膜あるい
は結晶軸が一定方向に配向した結晶軸配向膜層と強誘電
体層及び光伝導体層とを物理的蒸着法（ＰＶＤ法）又は
化学的蒸着法（ＣＶＯ法）により積層して形成する。(Structure) In order to achieve the above object, the present invention comprises a single crystal film or a crystal axis oriented film layer in which the crystal axes are oriented in a certain direction, and a strong crystalline film layer on a single crystal substrate or a glass substrate such as quartz or glass. A dielectric layer and a photoconductor layer are laminated and formed by a physical vapor deposition method (PVD method) or a chemical vapor deposition method (CVO method).
以下において、本発明による光空間変調素子について説
明する。In the following, a spatial light modulation element according to the present invention will be explained.
第１図は本発明による光空間変調素子の構造を示す概略
構成図で、その構成はサファイヤ、 ＬｉＦ等の単結晶
、あるいは石英、ガラス等のガラス系材料よりなる基板
５の上に結晶軸配向性のＺｎＯ。FIG. 1 is a schematic block diagram showing the structure of a spatial light modulation element according to the present invention, in which crystal axes are oriented on a substrate 5 made of a single crystal such as sapphire or LiF, or a glass-based material such as quartz or glass. sexual ZnO.
ＳｎＯ□＋ Ｉｎ２Ｏヨ等の透明導電性材料を、その結
晶軸が一定方向に配向するようにＰＶＤ法又はＣＶＤ法
により薄膜化して導電性結晶軸配向膜４を形成し。A conductive crystal axis alignment film 4 is formed by thinning a transparent conductive material such as SnO□+In2O□ by a PVD method or a CVD method so that its crystal axis is oriented in a certain direction.
この結晶軸配向膜４の上に、 ＰＶＤ法又はＣＶＤ法に
よりタングステンモリブデン系強誘電体層３を０．１〜
３０μｍの膜厚で積層し、さらにその上にＩＩ −Ｖｌ
族系、カルコゲン系、ＩＶ族系及びＧｅＣ，ＳｉＣ系そ
して有機系光伝導体材料のいずれかの光伝導体材料をＰ
ＶＤ法又はＣＶＤ法により積層して光伝導体ＪＩＩＪ２
を形成し、この光伝導体Ｍ１２の上面及び基板５の下面
に電極としての透明導電膜１，６を形成したものである
。On this crystal axis orientation film 4, a tungsten molybdenum based ferroelectric layer 3 of 0.1~
Laminated with a film thickness of 30 μm, and on top of that, II-Vl
Group-based, chalcogen-based, group IV-based, GeC, SiC-based, and organic photoconductor materials.
Photoconductor JIIJ2 is laminated by VD method or CVD method.
, and transparent conductive films 1 and 6 as electrodes are formed on the upper surface of the photoconductor M12 and the lower surface of the substrate 5.
以下、具体的な材料を用いて光空間変調素子を作成した
実施例について述べる。An example in which a spatial light modulator was created using specific materials will be described below.
最初に結晶軸配向膜を形成した基板を作成する。First, a substrate on which a crystal axis orientation film is formed is created.
結晶軸配向膜としてはＺｎＯ，５ｎ０２． ＩｎｚＯ３
等が使用できるが例としてＣ軸配向するＺｎＯを用いた
場合について説明する。As the crystal axis orientation film, ZnO, 5n02. InzO3
etc. can be used, but as an example, a case using C-axis oriented ZnO will be explained.
先ず、直径１００ｍｍ 、純度９９．９％のＺｎ板をタ
ーゲットとし、公知のＲＦマグネトロンスパッタ法を用
いて純度９９．９％の酸素とアルゴンガスとを共に一定
量流しながら、２５０°Ｃに加熱したサイズ２５ｍｍ
Ｘ２５ｍｍの四辺形の透明石英基板上にスパッタをおこ
なった。ここで基板を加熱するのは結晶軸が配向しやす
くするためである。そして、得られたＺｎＯの薄膜をＸ
線回折にて解析したところ、その解析ピークはＺｎＯの
（００，２）（００，４）のみである事が確認され、
Ｚｎ、Ｏ薄膜の結晶Ｃ軸は基板に垂直に配向している事
が判った。次に、この様にして作成された石英基板上の
Ｃ軸配向したＺｎＯ膜の上に、タングステンブロンズ系
強誘電体Ｓｒ２ ＫＮｂ５０ ＋５のターゲットを用い
てガス圧８ Ｘｌ０−” Ｔｏｒｒのアルゴン−酸素ガ
ス雰囲気中で、基板温度６２０°ＣとしてＲＦマグネト
ロンスパッタをおこない膜厚３μｍの強誘電体層を形成
した。この時、ターゲット作成用の原料として用いたＳ
ｒＣＯ３及びに２ ｃｏ３はその組成比をやや多めにし
た。又、 ＲＦパワーはＬ３０１ｉ１〜１９０Ｗである
、この様にして作成された５ｒｔＫＮｂｓＯｔ５誘電体
膜をアルゴンガス雰囲気中で２時間の熱処理をおこなっ
た後、Ｘ線回折で解析した結果、Ｃ軸配向している事が
確認された。ちなみにＺｎＯを積層していない石英基板
のみにＳｒ２ＫＮｂ５０１ｇをスパッタした時はＣ軸配
向が認められず、本発明による方法が強誘電体配向膜を
作成する上で有効に作用する事が確認された。First, a Zn plate with a diameter of 100 mm and a purity of 99.9% was used as a target, and was heated to 250°C using a known RF magnetron sputtering method while flowing a constant amount of both oxygen and argon gases with a purity of 99.9%. Size 25mm
Sputtering was performed on a quadrilateral transparent quartz substrate measuring 25 mm in diameter. The reason why the substrate is heated here is to facilitate orientation of the crystal axes. Then, the obtained ZnO thin film was
When analyzed by line diffraction, it was confirmed that the analysis peak was only (00,2) (00,4) of ZnO,
It was found that the crystal C axis of the Zn, O thin film was oriented perpendicular to the substrate. Next, on the C-axis oriented ZnO film on the quartz substrate prepared in this way, argon-oxygen gas at a gas pressure of 8 RF magnetron sputtering was performed in an atmosphere with a substrate temperature of 620°C to form a ferroelectric layer with a thickness of 3 μm.At this time, S
The composition ratios of rCO3 and 2co3 were slightly increased. In addition, the 5rtKNbsOt5 dielectric film prepared in this way, whose RF power was L301i1~190W, was heat-treated for 2 hours in an argon gas atmosphere, and then analyzed by X-ray diffraction, showing that the C-axis was oriented. It has been confirmed that there is. Incidentally, when 501 g of Sr2KNb was sputtered only on a quartz substrate on which ZnO was not laminated, no C-axis orientation was observed, confirming that the method according to the present invention works effectively in creating a ferroelectric alignment film.
次に、上記作成試料の両面に透明電極を蒸着した後、本
試料の電気光学効果を測定した。Next, after transparent electrodes were deposited on both sides of the prepared sample, the electro-optical effect of this sample was measured.
副室方法は第２図に示すように、レーザ光源１１と偏光
子１２と検光子１４及び受光素子１５、そして試料１３
と試料１３に印加する直流高圧電源１６とによる測定系
を用い、入射方向［００１１方向、電界方向［００１１
方向とし、入射光は波長６３３ｎｍのヘリウム−ネオン
レーザを使用し、印加電圧を２０Ｖステツプづつ変化さ
せて測定した。その測定結果を第３図に示す。As shown in FIG. 2, the sub-chamber method includes a laser light source 11, a polarizer 12, an analyzer 14, a light receiving element 15, and a sample 13.
and a DC high-voltage power supply 16 applied to the sample 13.
A helium-neon laser with a wavelength of 633 nm was used as the incident light, and the applied voltage was varied in 20 V steps for measurement. The measurement results are shown in FIG.
第３図より、半波長電圧は約３８０ｖと極めて低い値が
得られた。From FIG. 3, a very low half-wave voltage of about 380 V was obtained.
このように、 ＺｎＯのＣ軸配向膜上に形成されたＳｒ
ｚ ＫＮｂｓＯ＋ｓ強誘電体膜層は半波長電圧がバルク
を用いたものと較べて低いため、この強誘電体層に。In this way, the Sr formed on the C-axis oriented film of ZnO
z Since the half-wave voltage of the KNbsO+s ferroelectric film layer is lower than that using the bulk, this ferroelectric layer is used.
さらに光伝導体層を形成して光空間変調素子を作成する
ことにより、低電圧駆動で、しかも膜厚低減からくる解
像力の向上が期待できる光空間変調素子が実現できる。Furthermore, by forming a photoconductor layer to create a spatial light modulation element, it is possible to realize a spatial light modulation element that can be driven at a low voltage and is expected to improve resolution due to a reduction in film thickness.
そこで、実施例として、上記作成法と同様にして作られ
た石英基板上のＣ軸配向ＺｎＯ薄膜上に積層された５ｒ
２ＫＮｂｓＯ＋ｓ強誘電体層の上に、抵抗加熱法により
Ｓｓ−Ｔｅ（４ｗｔ％）光伝導体層を５μｍ厚に蒸着し
、さらに光伝導体層と石英基板下面に透明電極層を設け
ることによって光空間変調素子を試作し、試作した素子
に直流電圧３００■を印加しながらハロゲンランプでテ
ストチャートを書き込んだ後、波長８３０ｎｍの半導体
レーザを用いて偏光子、検光子を介して画像を読み出し
、これを写真撮影した後、その解像力（分解能）を解析
したところ、８ ＱＰ／ｍｍ （ＭＴＦ５０％）を得た
。また、書込み感度は６μＪ／ａｍ２とほぼＢＳＯを用
いた光空間変調素子なみの特性を得た。Therefore, as an example, a 5r layer was laminated on a C-axis oriented ZnO thin film on a quartz substrate made in the same manner as the above-mentioned method.
On the 2KNbsO+s ferroelectric layer, an Ss-Te (4wt%) photoconductor layer is deposited to a thickness of 5 μm using a resistance heating method, and a transparent electrode layer is provided on the photoconductor layer and the bottom surface of the quartz substrate to create an optical space. After making a prototype modulation element and writing a test chart with a halogen lamp while applying a DC voltage of 300μ to the prototype element, the image was read out using a semiconductor laser with a wavelength of 830 nm via a polarizer and an analyzer. After taking a photograph, its resolution was analyzed and found to be 8 QP/mm (MTF 50%). Further, the writing sensitivity was 6 μJ/am2, which is almost the same as that of an optical spatial modulation element using BSO.
前記実施例で解像力が８ＱＰ／ｍｍとＢＳＯタイプに比
してやや劣るのは強誘電体層の結晶性が不十分であると
判断される。そこで、強誘電体層の作成条件のうち基板
温度を前記実施例の場合より３０℃高く設定してＲＦマ
グネトロンスパッタをおこない。The reason why the resolution in the above example was 8 QP/mm, which is slightly inferior to that of the BSO type, is considered to be because the crystallinity of the ferroelectric layer is insufficient. Therefore, among the conditions for forming the ferroelectric layer, RF magnetron sputtering was performed with the substrate temperature set 30° C. higher than in the above embodiment.
前記実施例と同様に膜厚３μｍの強誘電体層を形成し、
その後アルゴンガス雰囲気中で３時間の熱処理をおこな
った後、５ｅ−Ｔｅ（４％１１％）光伝導層を５μｍ厚
に蒸着し、さらに電極としての透明導電膜を形成して光
空間変調素子を作成した。そして前記実施例と同様に特
性を測定した結果解像力（分解能） １２０ Ｐ／ｍｍ
（ＭＴＦ５０％）と前記実施例と比較して５０％の性
能アップを実現した。また、書込み感度は６μＪ／ａｍ
” とほぼ前記実施例と同じ感度を得た。なお、素子の
印加電圧は１５０ｖとした。A ferroelectric layer with a thickness of 3 μm was formed in the same manner as in the above example,
After heat treatment for 3 hours in an argon gas atmosphere, a 5e-Te (4% 11%) photoconductive layer was deposited to a thickness of 5 μm, and a transparent conductive film was further formed as an electrode to form an optical spatial modulation element. Created. The characteristics were measured in the same manner as in the above example, and the result was a resolution of 120 P/mm.
(MTF 50%), realizing a 50% increase in performance compared to the above example. Also, the writing sensitivity is 6μJ/am
”, almost the same sensitivity as in the above example was obtained.The voltage applied to the element was 150V.
以上の様に、本発明による光空間変素子は解像力の点で
満足する値に至ってはいないが、膜形成時の設定条件を
改善することにより、今後、その性能の向上が期待でき
る。また、光伝導層の材質、膜厚形成条件の改善及び強
誘電体層とのマツチング等の検討、さらに透過タイプの
光空間変調素子を作成する場合の反射防止膜や、反射タ
イプの場合の誘電体反射層の検討をおこなうことにより
一層の性能の向上が期待され、光空間変調素子としての
仕様に十分対応できる。As described above, although the optical space varying element according to the present invention has not yet reached a satisfactory value in terms of resolution, it is expected that its performance will improve in the future by improving the setting conditions during film formation. In addition, we will consider improving the material of the photoconductive layer, improving the film thickness formation conditions, and matching it with the ferroelectric layer, as well as improving the antireflection coating when creating a transmissive type optical spatial modulator and the dielectric layer when creating a reflective type. By studying the body reflection layer, further improvement in performance is expected, and the device can fully meet the specifications as an optical spatial modulator.
さて、次に、５ｒ２ＫＮｂ５０ ＋ｓ以外のタングステ
ンブロンズ系強誘電体層も前記実施例同様に結晶軸配向
を示すことを確認するため、ＺｎＯのＣ軸配向膜上にタ
ンタルニオブ酸カリウムを用いて強誘電体膜を形成した
。膜の作成条件は前記実施例と同様にＲＦマグネトロン
スパッタ法によりアルゴン−酸素ガス雰囲気中で基板温
度６２０°Ｃに加熱しておこなった。なお、ターゲット
として使用したタンタルニオブ酸カリウムは、最初に単
結晶を作成し、これを粉細して微粉末とした後、加圧成
形して焼成することにより作成したものを用いた。ＲＦ
マグネトロンスパッタ法により形成されたタンタルニオ
ブ酸カリウムの強誘電体膜をＸ線回折で解析した結果、
はぼＣ軸配向している事が確認された。Next, in order to confirm that the tungsten bronze ferroelectric layer other than 5r2KNb50 +s also exhibits crystal axis orientation in the same way as in the above example, potassium tantalum niobate was used on the ZnO C-axis oriented film to form a ferroelectric layer. A body membrane was formed. The film was formed using the same RF magnetron sputtering method as in the previous example, in which the substrate was heated to a temperature of 620 DEG C. in an argon-oxygen gas atmosphere. Note that the potassium tantalum niobate used as a target was created by first creating a single crystal, pulverizing this into a fine powder, and then press molding and firing. RF
As a result of X-ray diffraction analysis of a ferroelectric film of potassium tantalum niobate formed by magnetron sputtering,
It was confirmed that the fibers were oriented along the C-axis.
この様に、 ＺｎＯ等の結晶軸配向膜を基板上に形成し
た上に強誘電体層を蒸着することにより、タングステン
ブロンズ系強誘電体層の結晶軸配向を促進することが可
能をとなる。In this way, by forming a crystal axis orientation film such as ZnO on a substrate and then depositing a ferroelectric layer, it becomes possible to promote the crystal axis orientation of the tungsten bronze ferroelectric layer.
（効 果）
本発明による光空間変調素子のように、ＰＶＤ法又はＣ
ＶＤ法により、単結晶あるいはガラス系基板上に単結晶
膜あるいは結晶軸配向膜を形成し、その上に強誘電体層
、光伝導体層を積層して形成することにより、機能分離
タイプの高性能、低駆動電圧の光空間変調素子の実現が
期待できる。また、結晶軸配向性のＺｎＯ等の導電膜な
予め基板上に形成しておくことにより、その上に形成さ
れる強誘電体層が軸配向しやすくなる様に蒸着すること
ができるため素子の大面積化も可能であり、単結晶育成
の困難な誘電体材料への適用もでき、使用誘電体材料の
積類拡大による半波長電圧の低減や大面積化、解像力の
増大、さらに光伝導層との機能分離効果による感度の増
大、そして応答速度の向上が期待でき、また、単結晶バ
ルクに比較して作成も容易であるため低コストな素子を
提供できる。(Effect) Like the optical spatial modulation element according to the present invention, the PVD method or C
By forming a single crystal film or crystal axis orientation film on a single crystal or glass substrate using the VD method, and then laminating a ferroelectric layer and a photoconductor layer on top of it, a functionally separated type high-performance We can expect to realize optical spatial modulation elements with high performance and low driving voltage. In addition, by forming a conductive film such as ZnO with crystal axis orientation on a substrate in advance, the ferroelectric layer formed thereon can be deposited in a manner that facilitates axis orientation. It is possible to increase the area, and it can also be applied to dielectric materials that are difficult to grow single crystals.By expanding the variety of dielectric materials used, it is possible to reduce the half-wave voltage, increase the area, increase resolution, and further improve the photoconductive layer. An increase in sensitivity and an improvement in response speed can be expected due to the functional separation effect, and since it is easier to produce than a single crystal bulk, a low-cost device can be provided.
第１図は１本発明による光空間変調素子の概略構成図、
第２図は電気光学効果の測定系を示す図、第３図は本発
明によるＳｒｚにＮｂ５Ｏ＋５強誘電体層の電気光学効
果の測定結果を示す。
２・・・・光伝導体層、３・・・・強誘電体層、４・・
・・結晶軸配向膜、５・・・・基板。
εｐ加宅ヱ（Ｖ）FIG. 1 is a schematic configuration diagram of a spatial light modulation element according to the present invention;
FIG. 2 shows a system for measuring the electro-optic effect, and FIG. 3 shows the results of measuring the electro-optic effect of the Srz and Nb5O+5 ferroelectric layers according to the present invention. 2... Photoconductor layer, 3... Ferroelectric layer, 4...
...Crystal axis alignment film, 5...Substrate. εpKatakue (V)
Claims (1)
基板上に、単結晶膜あるいは結晶軸が同一方向に配向し
た結晶軸配向膜と強誘電体層と光伝導体層とを物理的又
は化学的蒸着法により積層して形成したことを特徴とす
る光空間変調素子。A single crystal film or a crystal axis oriented film in which the crystal axes are oriented in the same direction, a ferroelectric layer, and a photoconductor layer are formed on a substrate made of a single crystal or a glass material such as quartz or glass by physical or chemical treatment. An optical spatial modulation element characterized in that it is formed by laminating layers using a vapor deposition method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732986A JPS6323128A (en) | 1986-07-16 | 1986-07-16 | Optical space modulating element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16732986A JPS6323128A (en) | 1986-07-16 | 1986-07-16 | Optical space modulating element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6323128A true JPS6323128A (en) | 1988-01-30 |
Family
ID=15847723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16732986A Pending JPS6323128A (en) | 1986-07-16 | 1986-07-16 | Optical space modulating element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323128A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02245721A (en) * | 1989-03-18 | 1990-10-01 | Ngk Insulators Ltd | Image converting element and x-ray detection of image using thereof |
| JPH02291183A (en) * | 1989-05-01 | 1990-11-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting element |
| JP2010254157A (en) * | 2009-04-25 | 2010-11-11 | Iseki & Co Ltd | Walking type control machine |
-
1986
- 1986-07-16 JP JP16732986A patent/JPS6323128A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02245721A (en) * | 1989-03-18 | 1990-10-01 | Ngk Insulators Ltd | Image converting element and x-ray detection of image using thereof |
| JPH02291183A (en) * | 1989-05-01 | 1990-11-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting element |
| JP2010254157A (en) * | 2009-04-25 | 2010-11-11 | Iseki & Co Ltd | Walking type control machine |
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