JPS59141104A - Method of producing ferrodielectric thin film - Google Patents
Method of producing ferrodielectric thin filmInfo
- Publication number
- JPS59141104A JPS59141104A JP1562683A JP1562683A JPS59141104A JP S59141104 A JPS59141104 A JP S59141104A JP 1562683 A JP1562683 A JP 1562683A JP 1562683 A JP1562683 A JP 1562683A JP S59141104 A JPS59141104 A JP S59141104A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- producing
- substrate
- transparent
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、チタン酸鉛（Ｐ ｂＴ ）０３ ）からな
る強請′亀体薄膜の製造方法に関し、特に高周波マグネ
トロンスパッタリング法によって透明なＰｂＴｉ○３薄
膜を作製するための改良された方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for producing a transparent PbTi*3 thin film made of lead titanate (PbT), and in particular to a method for producing a transparent PbTi*3 thin film by a high frequency magnetron sputtering method. The present invention relates to an improved method for making.
従来例の構成とその問題点
最近の光通信技術の進歩に伴なって光集積回路用の光変
調素子や光スィッチを作製するために透明な強誘電体薄
膜が整寸れている。捷た、エレクトロルミネッセンスを
利用した薄膜構造の表示装置では駆動電圧の低下のため
に高誘電率の透明な絶縁膜が要望されている。しかし、
強誘電体は本質的に光学的に非等方性であり、多結晶化
すると粒子間の界面で光散乱するので光導波回路として
使用するには透明な薄膜とすることが望ましい。Conventional Structures and Their Problems With the recent progress in optical communication technology, transparent ferroelectric thin films are becoming increasingly sized for producing optical modulators and optical switches for optical integrated circuits. A transparent insulating film with a high dielectric constant is required for a display device with a thin film structure that utilizes electroluminescence to reduce the driving voltage. but,
Ferroelectric materials are essentially optically anisotropic, and when polycrystalline, light scatters at the interface between particles, so it is desirable to form a transparent thin film for use as an optical waveguide circuit.
従来、Ｐｂ’１１０３は実用的にすぐれた強誘電性物質
で圧電体磁器として高周波フィルタや集電効果素子とし
て広く使用されている。しかし、ＰｂＴｉＯ２は結晶学
的異方性が大きいこと、ＰｂＯの蒸気圧が高いことから
良好な単結晶の作製が困離で光学面への応用はなされて
いない。また、Ｐｂ Ｔ１０ｓ系磁器についての薄膜化
も種々発表されているが、透明な簿膜を安定に作製する
方法は末だ確立されていない〇
発明の目的
発明者らは、高周波マグネトロンスパッタリング法を用
いたＰｂＴ ＩＯ３の薄膜化の実験から、スパツタ膜の
透明性が基板とターゲット間の距離によって変化するこ
とを発見し、Ｐｂ ＴｉＯ３からなる緻密で透光性の優
れた強誘電体薄膜を再現性よく作製するための製造条件
を見出した。Conventionally, Pb'1103 is a practically excellent ferroelectric substance and has been widely used as a piezoelectric ceramic for high frequency filters and current collection effect elements. However, since PbTiO2 has large crystallographic anisotropy and the vapor pressure of PbO is high, it is difficult to produce a good single crystal, and it has not been applied to optical surfaces. In addition, various methods for thinning Pb T10s-based porcelain have been announced, but a method for stably producing a transparent film has not yet been established. Through experiments on thinning PbT IO3, we discovered that the transparency of the sputtered film changes depending on the distance between the substrate and the target, and we were able to create a dense ferroelectric thin film made of PbTiO3 with excellent translucency with good reproducibility. We have found the manufacturing conditions for making it.
発明の構成
本発明はＰｂＯとＴ ｉ０２との混合粉末をターゲット
材料として、所定の基板上にＰｂＴ ｉ Ｏｓの薄膜を
高周波マグネ苧トロンスパンタリング法により作製する
とき、基板とターゲット間の距離を６０賜以上に保持す
ることにより透明な強誘電体薄膜を生成するようにした
ことを特徴とするものである。Structure of the Invention The present invention provides a method for producing a thin film of PbTiOs on a predetermined substrate by high-frequency magnetron sputtering using a mixed powder of PbO and TiO2 as a target material. It is characterized in that a transparent ferroelectric thin film is produced by holding the ferroelectric material for a longer time.
性をもっている。また、このＰｂＴｉＯ２は酸化マグネ
シウムのみならずチタン酸ストロンチウム、サファイア
、溶融石英、白金などの基板に対しても高い誘電率と優
れた透光性をもった薄膜が得られる０
実施例の説明
以下努硼壌雄側について説明する。It has sex. In addition, this PbTiO2 can provide thin films with high dielectric constant and excellent translucency not only on substrates such as magnesium oxide but also on substrates such as strontium titanate, sapphire, fused silica, and platinum. I will explain about the side of Bongyang.
第１図は高周波マグネトロンスパッタリング装置の基板
とターゲット材料の配置を示す図で、基板１は陽極側に
設置した基板保持枠２によって保持され、その後方には
基板を所定の温度に加熱するためのヒータ３が設置しで
ある。ターゲット材料４には、生成するＰ ｂＴ ｉＯ
３膜の化学量論的組成比となるように秤量したＰｂＯと
ＴｉＯ２の混合粉末を用いこれを銅シャーレ５に入れた
ターゲットを弗素樹脂板６を介して水冷した陰極７の上
に設置してあり、この後方には回転する磁石８が設けで
ある。Figure 1 is a diagram showing the arrangement of the substrate and target material of a high-frequency magnetron sputtering device.A substrate 1 is held by a substrate holding frame 2 installed on the anode side, and behind it is a device for heating the substrate to a predetermined temperature. Heater 3 is installed. The target material 4 includes the generated P bT iO
A mixed powder of PbO and TiO2 weighed to have a stoichiometric composition ratio of three films was placed in a copper Petri dish 5, and a target was placed on a water-cooled cathode 7 via a fluororesin plate 6. A rotating magnet 8 is provided behind this.
本発明の高周波マグネトロンスパッタリングの条件とし
て重要な基板１とターゲット４０間の距離ｄ（第１図参
照）を変えてスパッタリングを行なった。他のスパッタ
リング条件は基板温度を６７５°Ｃ１ガス混合比をＡｒ
１０２−９６１５、ガス圧を５Ｐａ、として１．ｅＷ／
ｃＴ＃の高周波電力を加えて厚さ約２μｍのＰ ｂＴ
ｉＯａ薄膜を生成した。基板に（１００）面に沿ってへ
き開した酸化マグネジクー単結晶板を使用して上記の条
件でｄｉ変えて得られた厚さ約２７ｔｍのＰｂＴｉＯ３
薄膜の光透過率をＨｅ −Ｎ ｅレーザ光（波長６３２
．８４１１）によって測定した結果を第２図に示す。こ
の図から明らかなように基板とターゲット間の距離を６
０ｍ５以上に保持して高周波マグネトロンスパッタリン
グする ・ことにより、透過率が８０％以上の無色透
明なＰｂＴ ｉＯ３薄膜を得ることができる。また、こ
こで得られた透明なＰ ｂＴ ｚＯｓ薄膜一ついてＸ線
マイクロアナライザで組成比を分析し、Ｘ線回折と電子
線回折で結晶の同定と方位の決定を行なったところ、く
Ｏｏｌ〉方向および〈１ｏＯ〉方向に成長していること
がわかった。一方、電子線回折より回折図形が点状にな
ることからエピタキシャル成長していることが確認され
た。Sputtering was performed while changing the distance d (see FIG. 1) between the substrate 1 and the target 40, which is an important condition for high-frequency magnetron sputtering of the present invention. Other sputtering conditions include substrate temperature of 675°C, gas mixture ratio of Ar
102-9615, gas pressure is 5 Pa, 1. eW/
PbT with a thickness of approximately 2 μm by applying high frequency power of cT#
An iOa thin film was produced. PbTiO3 with a thickness of about 27 tm was obtained by using a magnetic oxide single crystal plate cleaved along the (100) plane as a substrate and changing di under the above conditions.
The light transmittance of the thin film was measured using He-Ne laser light (wavelength 632
．． 8411) is shown in FIG. 2. As is clear from this figure, the distance between the substrate and target is 6
A colorless and transparent PbTiO3 thin film with a transmittance of 80% or more can be obtained by performing high-frequency magnetron sputtering while maintaining the thickness at 0 m5 or more. In addition, the composition ratio of the transparent P bT zOs thin film obtained here was analyzed using an X-ray microanalyzer, and the crystals were identified and their orientation determined by X-ray diffraction and electron diffraction. It was found that the growth occurred in the <1oO> direction. On the other hand, electron beam diffraction revealed that the diffraction pattern was dotted, which confirmed epitaxial growth.
また、基板温度は５５０’Ｃかも７００″Ｃの間で変化
させても基板とターゲット間の距離を５０１１７１以上
に保持してスパッタリングすることにより、透過率が８
０％以上の無色透明なＰ ｂＴ ｉＯ３薄膜を得ること
ができる。Furthermore, even if the substrate temperature is varied between 550'C and 700'C, the transmittance can be increased to 8.
A colorless and transparent P bT iO3 thin film of 0% or more can be obtained.
発明の効果
以上の結果から明らかなように、本発明の強誘電体薄膜
の製造方法によれば、透明なＰｂＴｉＯ３薄膜が安定に
しかも再現性よく作製でき、工業的利用価値の大きいも
のである。Effects of the Invention As is clear from the above results, according to the method for producing a ferroelectric thin film of the present invention, a transparent PbTiO3 thin film can be produced stably and with good reproducibility, and has great industrial utility value.
第１図は高周波マグネトロンスパッタリング装置におけ
る基板とターゲット材料の配置を示す図、第２図は高周
波マグネトロンスパッタリングにより得られた薄膜のＨ
ｅ−Ｎｅレーザ光６とスパッタリング時の基板とターゲ
ット間の距離ｄとの関係を示す図である。
１ ・・基板、４・・・−・ターゲット拐刺、８・・・
・磁石０Figure 1 shows the arrangement of the substrate and target material in a high-frequency magnetron sputtering device, and Figure 2 shows the H of the thin film obtained by high-frequency magnetron sputtering.
FIG. 6 is a diagram showing the relationship between the e-Ne laser beam 6 and the distance d between the substrate and the target during sputtering. 1...Substrate, 4...--Target stabbing, 8...
・Magnet 0
Claims (1)
基板温度を６６０〜７００°Ｃに保った状態で、基板上
にＰ ｂＴ １０３薄膜を高周波マグネトロンスパッタ
リング法により作製するとき、前記基板と前記ターゲッ
ト間の距離’ｉ ５０’Ｊｌ＃、以上に保持することに
より透明なＰ ｂＴ ＩＯ３薄膜を生成することを特徴
とする強誘電体薄膜の製造方法。A mixed powder of PbO and T102 is used as a target material,
When producing a P bT 103 thin film on a substrate by high frequency magnetron sputtering while keeping the substrate temperature at 660 to 700°C, maintain the distance between the substrate and the target at 'i 50'Jl# or more. A method for producing ferroelectric thin films, characterized in that a transparent P bT IO3 thin film is produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1562683A JPS59141104A (en) | 1983-02-01 | 1983-02-01 | Method of producing ferrodielectric thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1562683A JPS59141104A (en) | 1983-02-01 | 1983-02-01 | Method of producing ferrodielectric thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59141104A true JPS59141104A (en) | 1984-08-13 |
Family
ID=11893917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1562683A Pending JPS59141104A (en) | 1983-02-01 | 1983-02-01 | Method of producing ferrodielectric thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141104A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5717157A (en) * | 1993-12-01 | 1998-02-10 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric thin film and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645827A (en) * | 1979-09-20 | 1981-04-25 | Fujitsu Ltd | Forming method for transparent ferroelectric thin film |
-
1983
- 1983-02-01 JP JP1562683A patent/JPS59141104A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5645827A (en) * | 1979-09-20 | 1981-04-25 | Fujitsu Ltd | Forming method for transparent ferroelectric thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5717157A (en) * | 1993-12-01 | 1998-02-10 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric thin film and method of manufacturing the same |
| US5989395A (en) * | 1993-12-01 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric thin film and method of manufacturing the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2532381B2 (en) | Ferroelectric thin film element and manufacturing method thereof | |
| CN100405204C (en) | Production method for polarization inversion unit and optical device | |
| JPS59141104A (en) | Method of producing ferrodielectric thin film | |
| US3781086A (en) | Domain switching element and method of producing the same | |
| JPS6241311B2 (en) | ||
| Masuda et al. | Preparation of Ba2NaNb5O15 film by RF magnetron sputtering method | |
| WO2010098227A1 (en) | Optical modulation material and method for producing same | |
| US2597589A (en) | Electrooptical device | |
| KR20050024241A (en) | Method for forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel, electronic equipment | |
| JPS60172103A (en) | Ferrodielectric thin film | |
| JPS58186105A (en) | Ferrodielectric thin film and ferrodielectric element | |
| JPS5938169B2 (en) | Method for forming transparent ferroelectric thin film | |
| JPH0762235B2 (en) | Method of manufacturing ferroelectric thin film | |
| JPS6323128A (en) | Optical space modulating element | |
| CN116239380B (en) | Electro-optic transparent ceramic with electrically controlled variable gradient refractive index and preparation method thereof | |
| JPH0672800B2 (en) | Pyroelectric infrared sensor | |
| JP2004070207A (en) | Method of manufacturing polarization reversal crystal | |
| CN108957902B (en) | Nonlinear optical device comprising boracite crystal | |
| JPS63178408A (en) | Manufacture of ferro dielectric thin film | |
| JPS60150614A (en) | Manufacture of magnetic thin film | |
| JP2003330053A (en) | Method for manufacturing polarization inverting crystal | |
| JPS63116304A (en) | Ferrodielectric thin film element | |
| JPS59223230A (en) | Manufacture of oriented thin lead titanate film | |
| JPS58172234A (en) | Thin film of amorphous lithium tantalate-lithium niobate and its preparation | |
| JPS595560B2 (en) | LiNb↓1-xTaxo↓3 single crystal film manufacturing method |