JPS63219568A - Formation of transparent conductive film - Google Patents
Formation of transparent conductive filmInfo
- Publication number
- JPS63219568A JPS63219568A JP5455087A JP5455087A JPS63219568A JP S63219568 A JPS63219568 A JP S63219568A JP 5455087 A JP5455087 A JP 5455087A JP 5455087 A JP5455087 A JP 5455087A JP S63219568 A JPS63219568 A JP S63219568A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- transparent conductive
- substrate
- jig
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 43
- 238000010891 electric arc Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、基板上に透明導電膜をスパッタリングによっ
て安定に形成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for stably forming a transparent conductive film on a substrate by sputtering.
従来の技術
例えば薄膜ＫＬ表示素子はストライプ状の透明電極群が
形成されたガラス板上に第１の絶縁膜を介してＫＬ （
ｉｕｅｃｔｒｏ ｈｕｍｉｎｅｓｃｅｎｃａ）発光層
を形成し、さらにその上に第２の絶縁膜を形成し、その
上に上記透明電極群と直交するようにストライプ状の背
面電極群を設けた構成になっている。Conventional technology For example, in a thin film KL display element, KL (
A light emitting layer is formed, a second insulating film is formed on the light emitting layer, and a striped back electrode group is provided on the second insulating film so as to be perpendicular to the transparent electrode group.
上記透明電極群は透明導電膜を形成し、写真蝕刻法を用
いて形成される。透明導電膜は、直流スパッタリング法
で形成される。第３図に示すようにペルジャー１２内に
対向させて設置されたカソード電極１６及びアノード電
極１３を有するスパッタリング装置が用いられる。透明
導電膜が被着される基板１４はアノード電極１３上に、
被着面をカソード電極１６に向けて搭載され、両電極１
３．１６間に所定の直流電圧を印加し、カソード電極１
６上に搭載された透明導電膜を形成するためのターゲッ
ト１６をスパッタすることによシ、基板１４上に透明導
電膜が形成される。The transparent electrode group forms a transparent conductive film and is formed using a photolithography method. The transparent conductive film is formed by direct current sputtering. As shown in FIG. 3, a sputtering device is used which has a cathode electrode 16 and an anode electrode 13 placed opposite each other in a Pel jar 12. The substrate 14 on which the transparent conductive film is deposited is on the anode electrode 13,
It is mounted with the adhered surface facing the cathode electrode 16, and both electrodes 1
3.Apply a predetermined DC voltage between 16 and the cathode electrode 1
A transparent conductive film is formed on the substrate 14 by sputtering the target 16 for forming the transparent conductive film mounted on the substrate 14 .
基板１４を第２図を用いてさらに詳しく説明すると、基
板７は治具８により保持され、基板７上の透明導電膜９
の形成範囲１ｏは、治具８の切欠範囲１１に制御される
。そして、治具８は透明導電膜９と接触する構造になっ
ている。To explain the substrate 14 in more detail using FIG. 2, the substrate 7 is held by a jig 8, and the transparent conductive film 9 on the substrate 7 is held by a jig 8.
The formation range 1o is controlled by the notch range 11 of the jig 8. The jig 8 is structured to be in contact with the transparent conductive film 9.
発明が解決しようとする問題点
第２図のような治具８を用いてスパッタリングを行ない
、基板Ｔ上に透明導電膜９を形成すると、スパッタリン
グ中に透明導電膜９の一部に樹枝状の膜破壊が発生する
。Problems to be Solved by the Invention When a transparent conductive film 9 is formed on a substrate T by sputtering using a jig 8 as shown in FIG. Membrane destruction occurs.
このように、透明導電膜の一部に樹枝状の膜破壊が発生
する原因としては、次のようなことが考えられる。すな
わち、スパッタリングにより基板上に透明導電膜を形成
中にチャージアップされた基板上の透明導電膜と通常ア
ース電位の基板を保持する治具との間でアーク放電が発
生する。これによって、アーク放電が発生した箇所に樹
枝状の膜破壊が発生し、薄膜ＩＣＬ表示素子の透明電極
としての機能を果さなくなる。The following may be considered as the cause of the occurrence of dendritic film destruction in a portion of the transparent conductive film. That is, while forming a transparent conductive film on a substrate by sputtering, an arc discharge occurs between the transparent conductive film on the substrate that is charged up and the jig that holds the substrate which is normally at ground potential. As a result, dendritic film breakdown occurs at the location where the arc discharge occurs, and the thin film ICL display element no longer functions as a transparent electrode.
本発明は、上記従来のスパッタリングによる透明導電膜
の形成中に発生する基板上の透明導電膜の樹枝状膜破壊
現象を解決することを目的とするものである。The present invention aims to solve the phenomenon of dendritic film destruction of a transparent conductive film on a substrate that occurs during the formation of a transparent conductive film by the conventional sputtering method.
問題点を解決するための手段
基板上に透明導電膜をスパッタリングによって形成する
方法において、基板を保持する治具が基板上に形成中の
透明導電膜と電気的に短絡しないような構造にする。Means for Solving the Problems In a method of forming a transparent conductive film on a substrate by sputtering, the jig for holding the substrate is structured so as not to be electrically short-circuited with the transparent conductive film being formed on the substrate.
作用
上記特徴を有する基板を保持する治具を用いて、基板上
に透明導電膜をスパッタリングによって形成する方法に
おいて、基板上に形成中の透明導電膜と基板を保持する
治具間のアーク放電の発生は防止できることとなり、基
板上の透明導電膜の樹枝状破壊は防止できる。Function: In a method of forming a transparent conductive film on a substrate by sputtering using a jig for holding a substrate having the above characteristics, arc discharge between the transparent conductive film being formed on the substrate and the jig for holding the substrate is detected. This means that the occurrence of dendrite fracture in the transparent conductive film on the substrate can be prevented.
実施例
第１図は本発明にかかる透明導電膜の形成法の一実施例
である。スパッタリングによって、基板１上に透明導電
膜４は形成され、透明導電膜４の形成範囲６は治具２の
切欠範囲６に制御される。Embodiment FIG. 1 shows an embodiment of the method for forming a transparent conductive film according to the present invention. The transparent conductive film 4 is formed on the substrate 1 by sputtering, and the formation range 6 of the transparent conductive film 4 is controlled to be within the cutout range 6 of the jig 2 .
基板１は治具２上の突起物３によって支持される。The substrate 1 is supported by a protrusion 3 on a jig 2.
支持箇所は透明導電膜４の形成範囲６外とし、突起物３
は透明導電膜４と接触してはならない。また、治具２全
体も透明導電膜４と接触しないようにする。治具２．突
起物３の材質は、導電性物質あるいは絶縁性物質のどち
らでも問題はない。The support location is outside the formation area 6 of the transparent conductive film 4, and the protrusion 3
must not come into contact with the transparent conductive film 4. Furthermore, the entire jig 2 is also prevented from coming into contact with the transparent conductive film 4. Jig 2. The material of the protrusion 3 may be either a conductive material or an insulating material.
上記のような基板を保持する治具で透明導電膜の形成を
行なえば、スパッタリング中に基板上の透明導電膜がチ
ャージアップされても基板を保持する治具との間でアー
ク放電は発生せず、これによって、基板上の透明電極膜
の樹枝状破壊現象の発生は防止できる。If a transparent conductive film is formed using a jig that holds the substrate as described above, even if the transparent conductive film on the substrate is charged up during sputtering, arc discharge will not occur between the jig and the jig that holds the substrate. First, this can prevent the occurrence of dendritic fracture of the transparent electrode film on the substrate.
ところで、第２図において治具８の材質を絶縁性物質と
し、治具８と形成中の透明導電膜９間のアーク放電の発
生を防止するということも考えられるがこの場合、膜形
成中治具８にも透明導電膜が付着し、結果としてアーク
放電が発生し、透明導電膜９の樹枝状破壊現象の発生は
防止できなかった。By the way, in FIG. 2, it is possible to use an insulating material for the jig 8 to prevent the occurrence of arc discharge between the jig 8 and the transparent conductive film 9 that is being formed. The transparent conductive film also adhered to the tool 8, resulting in arc discharge, and the occurrence of dendritic fracture of the transparent conductive film 9 could not be prevented.
発明の効果
以上のように本発明によれば、基板上に透明導電膜をス
パッタリングによって形成する方法において、基板を保
持する治具が基板上に形成中の透明導電膜と電気的に短
絡しないような構造にすれば、透明導電膜の樹枝状破壊
現象はなくなり、薄膜ＩＣＬ表示素子の透明電極として
の機能を果す。Effects of the Invention As described above, according to the present invention, in a method of forming a transparent conductive film on a substrate by sputtering, the jig for holding the substrate is prevented from electrically shorting with the transparent conductive film being formed on the substrate. With this structure, the dendritic fracture phenomenon of the transparent conductive film is eliminated, and the transparent conductive film functions as a transparent electrode of the thin-film ICL display element.
第１図（ｉＬ）は本発明にかかる透明導電膜形成方法の
一実施例の平面図、第１図（ｂ）はその人−ム断面図、
第２図（叫は従来の透明導電膜形成方法の平面図、第２
図（ｂ）はそのＢ−Ｂ断面図、第３図はスパッタリング
装置の概略図である。
１・・・・・・基板、２・・・・・・治具、４・・・・
・・透明導電膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名１−
基 抜
２−治具
（ｂ）
７−基 扶
第２図 ８−治具
ＬＱ）
（ｂ）FIG. 1(iL) is a plan view of an embodiment of the method for forming a transparent conductive film according to the present invention, FIG. 1(b) is a sectional view of the person,
Figure 2 (shown is a plan view of the conventional method for forming a transparent conductive film,
FIG. 3(b) is a sectional view taken along line BB, and FIG. 3 is a schematic diagram of the sputtering apparatus. 1... Board, 2... Jig, 4...
...Transparent conductive film. Name of agent: Patent attorney Toshio Nakao and 1 other person1-
Base removal 2-Jig (b) 7-Group Figure 2 8-Jig LQ) (b)
Claims (1)
方法において、基板を保持する治具が基板上に形成中の
透明導電膜と電気的に短絡しない構造を有する透明導電
膜の形成方法。A method for forming a transparent conductive film on a substrate by sputtering, in which a jig for holding the substrate has a structure that does not cause an electrical short circuit with the transparent conductive film being formed on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5455087A JPS63219568A (en) | 1987-03-10 | 1987-03-10 | Formation of transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5455087A JPS63219568A (en) | 1987-03-10 | 1987-03-10 | Formation of transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63219568A true JPS63219568A (en) | 1988-09-13 |
Family
ID=12973792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5455087A Pending JPS63219568A (en) | 1987-03-10 | 1987-03-10 | Formation of transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63219568A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322064U (en) * | 1989-07-11 | 1991-03-06 | ||
| US6555233B2 (en) | 1999-11-24 | 2003-04-29 | Dai Nippon Printing Co., Ltd. | Mask for sputtering |
| WO2021046003A1 (en) | 2019-09-02 | 2021-03-11 | The Procter & Gamble Company | Absorbent article |
-
1987
- 1987-03-10 JP JP5455087A patent/JPS63219568A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0322064U (en) * | 1989-07-11 | 1991-03-06 | ||
| US6555233B2 (en) | 1999-11-24 | 2003-04-29 | Dai Nippon Printing Co., Ltd. | Mask for sputtering |
| WO2021046003A1 (en) | 2019-09-02 | 2021-03-11 | The Procter & Gamble Company | Absorbent article |
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