JPS63217620A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPS63217620A JPS63217620A JP62050090A JP5009087A JPS63217620A JP S63217620 A JPS63217620 A JP S63217620A JP 62050090 A JP62050090 A JP 62050090A JP 5009087 A JP5009087 A JP 5009087A JP S63217620 A JPS63217620 A JP S63217620A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- plasma
- processed
- film
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 230000007423 decrease Effects 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 13
- 230000009849 deactivation Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000003672 processing method Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、プラズマ処理方法及び装置に係り、特に、電
子サイクロトロン共鳴（ＥＣＲ）を利用したプラズマＣ
ＶＤの高効率化、堆積膜質の高品質化、低温プロセス化
及び低ダメージ化を図る上に好適なプラズマ処理装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma processing method and apparatus, and particularly to a plasma processing method and apparatus using electron cyclotron resonance (ECR).
The present invention relates to a plasma processing apparatus suitable for achieving high efficiency of VD, high quality of deposited film, low temperature process, and low damage.
従来の有磁場マイクロ波プラズマ処理方法及び装置は、
特開昭５６−１５５５３５号公報に記載のように。The conventional magnetic field microwave plasma processing method and apparatus are:
As described in JP-A-56-155535.
プラズマ生成室内においてプラズマ活性種を生じさせ、
その活性種を発散磁界等で活性種生成効率最大領域から
充分前れた位置に設置された被処理基板１こプラズマ流
をあてて処理するものであった。Generate plasma active species in a plasma generation chamber,
The active species are processed by applying a plasma stream to a substrate placed sufficiently in front of the region of maximum active species production efficiency using a divergent magnetic field or the like.
このプラズマ処理方法において、さらに高効率化を図っ
た方法として、特開昭５７−７９６２１号公報に記載の
ように、基板処理室外側に磁石を配し、プラズマ流径を
絞ってプラズマ密度を高めた方法がある。また、特開昭
５９−３０１８号公報に記載されているように、ミラー
磁場によりプラズマ流の拡散を抑制して、被処理基板付
近のプラズマ密度を高めて、処理効率の増大化を図った
方法がある。In this plasma processing method, as described in Japanese Patent Application Laid-Open No. 57-79621, a magnet is placed outside the substrate processing chamber to narrow the plasma flow diameter and increase the plasma density. There is a method. Furthermore, as described in Japanese Patent Application Laid-Open No. 59-3018, a method of increasing processing efficiency by suppressing the diffusion of plasma flow using a mirror magnetic field and increasing the plasma density near the substrate to be processed. There is.
上記従来技術は、プラズマ活性種の寿命、あるいは、活
性値が被処理基板に達するまでの失活塵等の点について
配慮がされておらず、必ずしもプラズマ処理の高効率化
が達成されていない。また、被処理膜質の特性、例えば
堆積膜の緻密性、結晶性２組成等が良好ではない等の問
題があった。本発明の目的は、上記不都合を改善するこ
とにある。The above-mentioned conventional techniques do not take into account the lifespan of plasma active species or the amount of deactivated dust until the activation value reaches the substrate to be processed, and therefore high efficiency of plasma processing is not necessarily achieved. Further, there were problems in that the properties of the film to be processed, such as the denseness of the deposited film, the crystallinity, and the like, were not good. An object of the present invention is to improve the above-mentioned disadvantages.
具体的には、活性種の失活塵を考慮してプラズマ処理の
高効率化をはかったプラズマ処理装置を提供することに
ある。Specifically, it is an object of the present invention to provide a plasma processing apparatus that increases the efficiency of plasma processing by taking into account deactivation dust of active species.
上記目的は、被処理基板の位置をプラズマ活性種の最大
生成点となる電子サイクロトロン共鳴点（ＥＣＲ点）か
ら最大でも１５０＋ｍ以下にすることにより達成される
。The above object is achieved by locating the substrate to be processed at a maximum of 150+ m or less from the electron cyclotron resonance point (ECR point), which is the maximum generation point of plasma active species.
ＥＣＲ点と被処理基板との距離の調節は、プラズマ生成
室の磁束密度を高くし、また高精度に制御することで達
成される。Adjustment of the distance between the ECR point and the substrate to be processed is achieved by increasing the magnetic flux density of the plasma generation chamber and controlling it with high precision.
マイクロ波プラズマ放電により反応ガスは活性化される
。特に、ＥＣＲ点近傍で最も効率よく活性化される。生
成した活性種は、その後、エネルギー散逸により活性を
失ったり、他端子との衝突による粒子間相互作用による
失活も起こる。従って、被処理基板をＥＣＲ点に近づけ
ることにより、プラズマ活性種を活性度の高い状態が維
持された状態にて基板に到達させることが出来る。この
ため、プラズマ処理の高効率化がなされる。また。The reactant gas is activated by a microwave plasma discharge. In particular, it is activated most efficiently near the ECR point. The generated active species subsequently loses activity due to energy dissipation, or deactivation occurs due to interparticle interaction due to collision with other terminals. Therefore, by bringing the substrate to be processed close to the ECR point, the plasma active species can reach the substrate while maintaining a high degree of activity. Therefore, plasma processing can be performed with high efficiency. Also.
プラズマ処理特性、例えば、基板上に膜を堆積させる際
に、堆積させる分子あるいは原子の電子エネルギ結合原
子間振動力２同転及び並進エネルギが高い程、プラズマ
中では集合体とならずに単一粒子である確率が高いため
、堆積された膜質は熱化学反応組成に近いものが得られ
る。更に、基板に付着した堆積活性種は上記運動エネル
ギが高いため、予め基板上に形成された分子層に、エネ
ルギが最小となる配列、配向位置まで、再配列及び再配
向運動する確率が高い。このため、得られた膜質の緻密
性や結晶性は高くなる。また、化学組成比も熱化学反応
により形成された膜に近くなる。Plasma processing characteristics, for example, when depositing a film on a substrate, the higher the electron energy coupling interatomic vibrational force 2 of the molecules or atoms to be deposited, the higher the rotational and translational energies, the more the molecules or atoms that are deposited do not form aggregations but form single particles. Since there is a high probability that the particles are particles, the quality of the deposited film is close to that of a thermochemical reaction composition. Furthermore, since the deposited active species attached to the substrate have high kinetic energy, there is a high probability that they will rearrange and reorient in the molecular layer previously formed on the substrate to the alignment and orientation position where the energy is minimum. Therefore, the denseness and crystallinity of the obtained film quality become high. Furthermore, the chemical composition ratio is close to that of a film formed by a thermochemical reaction.
尚、磁場分布Ｂ（Ｚ）（Ｚはプラズマ流方向を正とした
真空装置の中心軸座標）が単調減少でなければ、ｄＢ／
ｄ Ｚ＞０となる位置にてマイクロ波の伝播が阻害され
、プラズマ活性種の生成効率が低下するため望ましくな
い。In addition, if the magnetic field distribution B(Z) (Z is the coordinate of the central axis of the vacuum device with the plasma flow direction as positive) does not decrease monotonically, dB/
This is not desirable because the propagation of microwaves is inhibited at a position where dZ>0, and the efficiency of generating plasma active species decreases.
以下、本発明の一実施例を図面を用いて詳細に説明する
。第１図は本発明のプラズマ処理装置の主要部の模式図
である。本装置は、プラズマ生成室４、マイクロ波導波
管７．（マイクロ波６の発振器は図省略）、ＥＣＲ用磁
場コイル９及び１３゜処理室２、排気口１２（排気系は
図省略）、反応ガス供給ノズル５及び１１（反応ガス供
給系は図省略）、基板支持台３より成る。プラズマ生成
室４は直径２４０（ｍ）φ、長さ２５０（ａｍ）の透明
石英製で、円錐形の頂部がマイクロ波導入窓８となって
いる。ＥＣＲ用磁場コイル９及び１３は、プラズマ生成
室及び処理室の周囲に設置され、プラズマ生成室の最大
磁束密度は２．６ （ＫＧａｕｓｓ）であり、それぞれ
３個及び２個に分割され個別に調整することにより磁束
密度を制御できる。処理室２は直径２４０（ｍｍ）φの
ステンレス鋼製で、中に設置された基板支持台３は直径
１２０（ｍｓ）φのアルミナ製でその位置はプラズマ流
方向（図面では左右）に可変である。第２図はマイクロ
波進行方向の磁束密度の分布の例を示す、ＥＣＲ磁場コ
イル９及び１３を調整することにより、各種の分布を作
ること及び基板支持台３の位置を設定することにより基
板とＥＣＲ点との距離を制御できる。Hereinafter, one embodiment of the present invention will be described in detail using the drawings. FIG. 1 is a schematic diagram of the main parts of the plasma processing apparatus of the present invention. This device includes a plasma generation chamber 4, a microwave waveguide 7. (The oscillator of the microwave 6 is omitted from the illustration), ECR magnetic field coil 9 and 13° processing chamber 2, exhaust port 12 (the exhaust system is omitted from the illustration), reaction gas supply nozzles 5 and 11 (the reaction gas supply system is omitted from the illustration) , a substrate support stand 3. The plasma generation chamber 4 is made of transparent quartz and has a diameter of 240 (m) φ and a length of 250 (am), and has a conical top serving as a microwave introduction window 8 . The magnetic field coils 9 and 13 for ECR are installed around the plasma generation chamber and the processing chamber, and the maximum magnetic flux density of the plasma generation chamber is 2.6 (K Gauss), and they are divided into three and two pieces, respectively, and adjusted individually. By doing so, the magnetic flux density can be controlled. The processing chamber 2 is made of stainless steel with a diameter of 240 (mm) φ, and the substrate support stand 3 installed inside is made of alumina and has a diameter of 120 (ms) φ, and its position can be varied in the plasma flow direction (left and right in the drawing). be. FIG. 2 shows an example of the distribution of magnetic flux density in the direction of microwave propagation. By adjusting the ECR magnetic field coils 9 and 13, various distributions can be created and by setting the position of the substrate support 3, the substrate can be The distance to the ECR point can be controlled.
実施例１
被処理基板１としてシリコンウェハ（直径１０１００（
＋） φ）を用い、シリコン酸化膜を形成した。プラズ
マ生成室４内に第１のガス導入管５を通して酸素を４０
Ｃｍ Ｑ ／ｆｆ１ｉｎ ）導入し、２．４５（ＧＨ
ｚ３のマイクロ波６を導波管７により伝播させてマイク
ロ波導入窓８を通してプラズマ生成室に導入する。さら
に、プラズマ生成容器の外側に設置された同軸型の静磁
場発生コイル９及び１３により８７５ （Ｇａｕｓｓ）
以上の磁場を発生させてプラズマ流１０を生成させ第２
のガス導入管１１よりモノシラン（ＳｉＨａ）を６ （
ｍ Ｑ ／ｗｉｎ）導入し、処理室２内の圧力は排気系
により１（ｍＴｏｒｒｌにした。上記静磁場発生コイル
９及び１３に流す電流値を調整することにより、磁束密
度分布を制御しあるいは基板支持台位置を調整し。Example 1 A silicon wafer (diameter 10100 (
+) φ) was used to form a silicon oxide film. 40 ml of oxygen is introduced into the plasma generation chamber 4 through the first gas introduction pipe 5.
Cm Q /ff1in) and 2.45(GH
The microwave 6 of z3 is propagated by the waveguide 7 and introduced into the plasma generation chamber through the microwave introduction window 8. Furthermore, 875 (Gauss)
A second magnetic field is generated to generate the plasma flow 10.
Monosilane (SiHa) was introduced from the gas introduction pipe 11 of 6 (
m Q /win) was introduced, and the pressure inside the processing chamber 2 was set to 1 (mTorrl) by the exhaust system. By adjusting the current value flowing through the static magnetic field generating coils 9 and 13, the magnetic flux density distribution was controlled or the substrate Adjust the support stand position.
ＥＣＲ点と被処理基板間の距離を異ならせた。第３図（
ａ）、（ｂ）は５ｉＯｚ膜堆積速度と堆積速度の基板内
でのバラツキ、（ｃ）、（ｄ）は堆積膜のバッファエツ
チング（ＨＦＩ容、ＮＨ４Ｆ６容の混合）液によるエツ
チング速度と基板内でのバラツキ、（ｅ）、（ｆ）は形
成された膜の光学屈折率と屈折率の基板内でのバラツキ
、（ｇ）。The distance between the ECR point and the substrate to be processed was varied. Figure 3 (
a) and (b) show the deposition rate of the 5iOz film and its variation within the substrate; (c) and (d) show the etching rate of the deposited film using a buffer etching solution (a mixture of HFI and NH4F6 contents) and the variation within the substrate. (e) and (f) are the variations in the optical refractive index of the formed film and the variations in the refractive index within the substrate (g).
（ｈ）は形成された膜のオージェ分光から得られたＳ
ｉ ／ Ｏのモル比と基板内でのバラツキを、ＥＣＲ点
と基板間距離ｄに対して図示したものである。なお、図
中破線は基板位置をプラズマ生成室内にした結果である
。堆積速度については、第３図（ａ）から距離ｄがＯ〜
１５０Ｃｍ〕あたりの領域で比較的速く、特にｄ二１０
０ （ａｓ）付近から堆積速度が大きくなることがわか
る。また。(h) is S obtained from Auger spectroscopy of the formed film.
The molar ratio of i/O and the variation within the substrate are illustrated with respect to the ECR point and the distance d between the substrates. Note that the broken line in the figure is the result of setting the substrate position within the plasma generation chamber. Regarding the deposition rate, from Fig. 3(a), the distance d is O ~
Relatively fast in the area around 150 cm], especially d210
It can be seen that the deposition rate increases from around 0 (as). Also.
第３図（ｂ）から堆積速度のバラツキはｄが０〜７０（
ｍｌで小さく、均一性が優れていることがわかる。第３
図（ｃ）と（ｄ）から、ｄが１５０〔■〕以内の所にエ
ツチング速度がおそい領域があり、この領域内で緻密性
の高い膜が得られていること、及びｄが０〜７０〔■〕
の領域において均一性が良好であることがわかる。第３
図Ｃｅ）と（ｆ）から、ｄが０〜１５０（＋ｍ）内で熱
酸化膜に近い屈折率の膜が得られていること、ｄが０〜
７０［ｍ）において均一性が良好であることがわかる。From Figure 3(b), the variation in deposition rate is d from 0 to 70 (
It can be seen that the volume is small in ml and the uniformity is excellent. Third
From Figures (c) and (d), it can be seen that there is a region where the etching rate is slow within d of 150 [■], and a highly dense film is obtained within this region, and that d is between 0 and 70. [■]
It can be seen that the uniformity is good in the region. Third
From Figures Ce) and (f), a film with a refractive index close to that of a thermal oxide film is obtained with d ranging from 0 to 150 (+m), and d ranging from 0 to 150 (+m).
It can be seen that the uniformity is good at 70 [m].
第３図（ｇ）、（ｈ）から、ｄが０以上である領域でＳ
ｉ／０モル比が０．５ となり、均一性も良効であるこ
とがわかる。From Fig. 3 (g) and (h), in the region where d is 0 or more, S
It can be seen that the i/0 molar ratio was 0.5, and the uniformity was also good.
尚、磁束密度分布を一定にし、基板支持台の位置を調整
して、処理室内でＥＣＲ点と被処理基板間の距離ｄを変
えた場合には同じ結果が得られたが、基板位置をプラズ
マ生成室内に位置させた場合、すなわち基板が第１のガ
ス導入管と第２のガス導入管間に位置させた場合は、第
３図（ａ）〜（ｈ）中で破線で示したように、基板位置
を処理室に位置させた場合と比較して、堆積速度の減少
や、分布が悪くなる等の値に差異はあるものの、これら
値のＥＣＲ点と被処理基板間の距離の関係から見ると同
様の結果が得られていることがわかる。このことから、
マイクロ波プラズマ放電による膜堆積特性には、プラズ
マ活性種の最大生成領域、すなわち、装置内のＥＣＲ面
と基板までの距離に大きく依存していることがわかる。The same results were obtained when the magnetic flux density distribution was kept constant, the position of the substrate support was adjusted, and the distance d between the ECR point and the substrate to be processed was changed in the processing chamber, but the substrate position was When the substrate is located inside the generation chamber, that is, when the substrate is located between the first gas introduction pipe and the second gas introduction pipe, as shown by the broken lines in FIGS. 3(a) to (h), Compared to the case where the substrate is located in the processing chamber, there are differences in the values such as a decrease in the deposition rate and a worsening of the distribution, but based on the relationship between these values and the distance between the ECR point and the substrate to be processed. It can be seen that similar results are obtained. From this,
It can be seen that the film deposition characteristics by microwave plasma discharge are largely dependent on the maximum production area of plasma active species, that is, the distance between the ECR surface in the apparatus and the substrate.
さらに、活性種の寿命や不活性分子との衝突等の相互作
用による失活等の影響がない距離は平均自由行程以下で
あることがわかる６さらにｄがＯ〜７０（ｍ）において
は成膜及び膜質均一性が優れ、これはモノシランの活性
種５ｉＨｚ＋等の脱活性寿命範囲と一致している。Furthermore, it can be seen that the distance at which there is no influence of deactivation due to the lifetime of the active species or interactions such as collisions with inert molecules is less than the mean free path. 6 Furthermore, when d is O ~ 70 (m), film formation And the film quality uniformity is excellent, and this coincides with the deactivation life range of monosilane active species such as 5iHz+.
実施例２
上記装置にて、第１導入ガスとして窒素を４０［ｍ Ｑ
／ｗｉｎ ］第２導入ガスとしてモノシラン（ＳｉＨ
ａ）を６ （ｍ Ｑ ／ｗｉｎ ）を流し、圧力を１
［ｍＴｏｒｒ）で処理室内で５ｉａＮａ膜堆積させた。Example 2 In the above apparatus, nitrogen was introduced as the first gas at 40 [mQ
/win ] Monosilane (SiH
a) at a flow rate of 6 (m Q /win) and a pressure of 1
The 5iaNa film was deposited in a processing chamber at [mTorr].
結果を第４図（ａ）〜（ｈ）に示した。第３図の５ｉＯ
ｚ膜堆積時と同様に、堆積速度、膜のエツチング速度、
屈折率、化学組成比、及びこれらの基板内でのバラツキ
はＥＣＲ点と基板間距離ｄに大きく依存している。化学
組成比（Ｓｉ／Ｎモル比）はｄが０以上で一定であるが
、ｄが０〜１５０（ｍ）で、膜のエツチング速度および
屈折率が熱チツ化膜と同じか又は近いものが得られ、か
つ堆積速度も大きい。基板内の膜の均一性については、
５ｉｎｓ膜の形成と同様、ｄがＯ〜７０〔閣〕で比較的
良好である。The results are shown in FIGS. 4(a) to (h). 5iO in Figure 3
As in the case of Z film deposition, the deposition rate, film etching rate,
The refractive index, chemical composition ratio, and variations within the substrate largely depend on the distance d between the ECR point and the substrate. The chemical composition ratio (Si/N molar ratio) is constant when d is 0 or more, but when d is 0 to 150 (m), the etching rate and refractive index of the film are the same as or close to that of the thermally formed film. and the deposition rate is high. Regarding the uniformity of the film within the substrate,
As with the formation of the 5ins film, d is relatively good at 0 to 70.
実施例３
上記装置にて、第１導入ガスを水素、第２導入ガスをモ
ノシラン（ＳｉＨａ）として、基板温度を３２０℃とし
て多結晶Ｓｉ膜を処理室内で堆積した。その結果、ｄが
０〜１５０（ｍｌの距離において、第５図（ａ）、（ｂ
）のように、堆積速度か大きく、かつＸ線回折から調べ
た多結晶シリコンの結晶粒径が大きく結晶性が優れてい
ることが判る。Example 3 Using the above-described apparatus, a polycrystalline Si film was deposited in the processing chamber using hydrogen as the first introduced gas, monosilane (SiHa) as the second introduced gas, and a substrate temperature of 320°C. As a result, at a distance of d from 0 to 150 (ml), Figures 5(a) and (b)
), it can be seen that the deposition rate is high, the crystal grain size of polycrystalline silicon is large, and the crystallinity is excellent as determined by X-ray diffraction.
実施例４
上記装置にて、第１導入ガスを水素、第２導入ガスを六
フッ化タングステン（ＷＦｅ）として、圧力０．３１１
ＩＴｏｒｒ ＴＷ膜を処理室内で堆積させた。Example 4 In the above apparatus, the first introduced gas was hydrogen, the second introduced gas was tungsten hexafluoride (WFe), and the pressure was 0.311.
ITorr TW films were deposited in a processing chamber.
第６図（ａ）、（ｂ）のように、ｄがＯ−１５０〔■〕
において、抵抗率が４．０μΩ／ａ１１とバルクの抵抗
率と同様の低抵抗膜が効率良く形成された。As shown in Figure 6 (a) and (b), d is O-150 [■]
In this method, a low resistance film having a resistivity of 4.0 μΩ/a11, which is similar to the bulk resistivity, was efficiently formed.
ＷＦｅ活性種寿命における平均自由行程は、この圧力で
前記のＳｉＨ４と同程度であり、脱活性寿命範囲の膜特
性が優れていることが判った。It was found that the mean free path in the lifetime of WFe active species was comparable to that of SiH4 described above at this pressure, and the film properties in the deactivation lifetime range were excellent.
実施例５
上記装置にて、第１導入ガスとして水素と窒素の混合ガ
スを、第２導入ガスとして三塩化アルミニウム（ＡｕＣ
Ｑａ）を窒素キャリアで供給し、処理室内で窒化アルミ
ニウム（ＡＩ２Ｎ）を堆積させた。堆積速度及び堆積膜
の破壊電圧を測定したところ、第７図（ａ）、（ｂ）の
ように、ｄがＯ〜１５０（ｆｆＩｌ〕ニおイテ破壊電圧
が５〔Ｍｖ／口〕以上となる良効な絶縁材が効率良く得
られた。このときの界面準位密度はｌ Ｑ １０ ［、
−２］と良好であった。Example 5 In the above apparatus, a mixed gas of hydrogen and nitrogen was used as the first introduced gas, and aluminum trichloride (AuC) was used as the second introduced gas.
Qa) was supplied with a nitrogen carrier, and aluminum nitride (AI2N) was deposited in the processing chamber. When the deposition rate and breakdown voltage of the deposited film were measured, as shown in Figures 7(a) and (b), when d was O~150 (ffIl), the breakdown voltage was 5 [Mv/mouth] or more. A good insulating material was efficiently obtained.The interface state density at this time was l Q 10 [,
-2], which was good.
実施例６
上記装置にて、第１導入ガスとして６フツ化イオウ（Ｓ
Ｆｅ）を導入し、圧力ｌ （ｍＴｏｒｒ）にて多結晶シ
リコン及び酸化ケイ素をエツチングした。Example 6 In the above apparatus, sulfur hexafluoride (S
Polycrystalline silicon and silicon oxide were etched at a pressure of l (mTorr).
多結晶シリコンのエツチング速度及び酸化ケイ素に対す
るエツチング選択比（Ｓｉ／５ｉＯｚ）は、第８図（ａ
）、（ｂ）のようになった、ｄか０〜１５０（ｍ）にお
いて、多結晶シリコンは高選択的に、効率良くエツチン
グされる。The etching rate of polycrystalline silicon and the etching selectivity to silicon oxide (Si/5iOz) are shown in Figure 8(a).
) and (b), polycrystalline silicon is etched highly selectively and efficiently when d is 0 to 150 (m).
このようにこれらの実施例によれば、マイクロ波プラズ
マ処理効率及び堆積膜の特性は、ＥＣＲ点と被処理基板
間距離ｄ、すなわち、プラズマ活性種の寿命及び不活性
種との衝突等の相互作用による電子エネルギーの活性度
の失活度、あるいは、振動２回転、並進エネルギーの低
下度に大きく依存しテオリ、ソノ結果、ｄがＯ〜１５ｏ
ＣｆｆＩＩ＋〕内にすると堆積速度、膜質が良好となる
効果がある。According to these examples, the microwave plasma processing efficiency and the characteristics of the deposited film depend on the distance d between the ECR point and the substrate to be processed, that is, the lifetime of the plasma active species and the interactions such as collisions with inactive species. It depends largely on the degree of deactivation of the activity of the electron energy due to the action, or the degree of decrease in the two rotations of vibration and the translational energy.
CffII+] has the effect of improving the deposition rate and film quality.
さらに、プラズマ活性種の寿命及び失活度の分布がある
ため堆積速度あるいは膜質の均一性を考慮すると、ｄが
０〜７０（ｍ）内で、これらも良好となる効果がある。Furthermore, since there is a distribution of the lifetime and deactivation degree of plasma active species, when considering the deposition rate or uniformity of film quality, it is effective to improve these as well when d is within 0 to 70 (m).
本発明によれば、ＥＣＲ点と被処理材のきよりを１５０
−以下にしたので、マイクロ波プラズマ処理において、
膜堆積速度が向上し、その結果、スループットが向上す
る効果がある。また、成膜においては低温の被処理基板
上にも高温熱処理と同等の結晶性、緻密性の膜質が得ら
れる。According to the present invention, the ECR point and the strength of the material to be treated are 150
-Since the following is done, in microwave plasma treatment,
This has the effect of increasing the film deposition rate and, as a result, improving throughput. Furthermore, in film formation, a film quality of crystallinity and density equivalent to that obtained by high-temperature heat treatment can be obtained even on a substrate to be processed at a low temperature.
第１図は本発明のマイクロ波プラズマ処理装置の断面図
、第２図はプラズマ生成室及び処理室の磁束密度分布の
例を示す図、第３図ないし第８図は本発明による実験デ
ータを示す図である。
１・・・被処理基板、２・・・処理室、３・・・プラズ
マ生成室、６・・・マイクロ波、８・・・マイクロ波導
入窓、９゜１３・・・プラズマ生成用静磁場発生コイル
、５゜令１０
第２虐
寮３（２１１
ＥＣ恒咽ｎ鞘１リ ５ＣＣ１０頂な−（）も ４ 口
恭５圀
Ｅ（Ｆ、ｅ、に＠Ｗｊ−／ｆｌＤ１１ｈｔｎｍ）
ＥＣ駒ｔ１９１ｄｌｒＪＦＥｆｌＨＬＥ（聴ε裏緩ｍ話
維帥） ＥＣ１ｌす、ε某板陶ごＥ祭Ｇり療αFIG. 1 is a cross-sectional view of the microwave plasma processing apparatus of the present invention, FIG. 2 is a diagram showing an example of magnetic flux density distribution in the plasma generation chamber and the processing chamber, and FIGS. 3 to 8 show experimental data according to the present invention. FIG. DESCRIPTION OF SYMBOLS 1...Substrate to be processed, 2...Processing chamber, 3...Plasma generation chamber, 6...Microwave, 8...Microwave introduction window, 9゜13...Static magnetic field for plasma generation Generating coil, 5゜Rei 10 2nd torture room 3 (211 EC hengaryn sheath 1 ri 5CC10 top na-() also 4 mouth Kyo 5 Kyo E (F, e, @Wj-/flD11htnm)
EC piece t191dlrJFEflHLE (listening to the back of the story) EC1l, εcertain board pottery E festival G treatment α
Claims (1)
に向つて弱くなる単調減少であるとともに、前記被処理
基板が電子サイクロトロン共鳴点から１５０ｍｍ以内に
位置する領域で処理されるよう構成したことを特徴とす
るプラズマ処理装置。 ２、前記被処理基板がマイクロ波導入方向に位置を調整
可能であることを特徴とする特許請求の範囲第１項記載
のプラズマ処理装置。 ３、磁場分布を調整することによつて電子サイクロトロ
ン共鳴点の位置を調整可能であることを特徴とする特許
請求の範囲第１項記載のプラズマ処理装置。[Claims] 1. The magnetic field distribution monotonically decreases from the microwave introduction window toward the substrate to be processed, and the substrate to be processed is processed in a region located within 150 mm from the electron cyclotron resonance point. A plasma processing apparatus characterized in that it is configured to 2. The plasma processing apparatus according to claim 1, wherein the position of the substrate to be processed is adjustable in the microwave introduction direction. 3. The plasma processing apparatus according to claim 1, wherein the position of the electron cyclotron resonance point can be adjusted by adjusting the magnetic field distribution.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62050090A JPS63217620A (en) | 1987-03-06 | 1987-03-06 | Plasma processing device |
| EP88100672A EP0275965B1 (en) | 1987-01-19 | 1988-01-19 | Plasma operation apparatus |
| US07/145,371 US4876983A (en) | 1987-01-19 | 1988-01-19 | Plasma operation apparatus |
| DE3853890T DE3853890T2 (en) | 1987-01-19 | 1988-01-19 | Device working with a plasma. |
| KR1019880000369A KR960015609B1 (en) | 1987-01-19 | 1988-01-19 | Plasma operation apparatus |
| US08/131,519 US5433788A (en) | 1987-01-19 | 1993-10-04 | Apparatus for plasma treatment using electron cyclotron resonance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62050090A JPS63217620A (en) | 1987-03-06 | 1987-03-06 | Plasma processing device |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15835594A Division JPH07161700A (en) | 1994-07-11 | 1994-07-11 | Plasma treatment method |
| JP6158354A Division JP2703184B2 (en) | 1994-07-11 | 1994-07-11 | Plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63217620A true JPS63217620A (en) | 1988-09-09 |
| JPH0556855B2 JPH0556855B2 (en) | 1993-08-20 |
Family
ID=12849345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62050090A Granted JPS63217620A (en) | 1987-01-19 | 1987-03-06 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63217620A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6436769A (en) * | 1987-04-27 | 1989-02-07 | Semiconductor Energy Lab | Plasma treatment device |
| JPH0362517A (en) * | 1989-03-27 | 1991-03-18 | Anelva Corp | Microwave plasma processor |
| JPH03158471A (en) * | 1989-11-15 | 1991-07-08 | Hitachi Ltd | Microwave plasma treating device |
| JPH0379421U (en) * | 1989-12-01 | 1991-08-13 | ||
| JPH03259517A (en) * | 1990-03-08 | 1991-11-19 | Nec Corp | Ecr plasma etching method |
| JPH0425022A (en) * | 1990-05-16 | 1992-01-28 | Nec Corp | Apparatus and method for microwave plasma etching |
| JPH04103783A (en) * | 1990-08-22 | 1992-04-06 | Nec Corp | Microwave plasma etching device |
| JPH0653170A (en) * | 1992-03-18 | 1994-02-25 | Nec Corp | Ecr plasma etcher |
| JPH08203693A (en) * | 1995-08-28 | 1996-08-09 | Semiconductor Energy Lab Co Ltd | Thin film forming device |
| US6066568A (en) * | 1997-05-14 | 2000-05-23 | Tokyo Electron Limited | Plasma treatment method and system |
| JP2000299312A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma treatment method and manufacture of semiconductor device |
| JP2000299311A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma processing system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS59136130A (en) * | 1983-01-24 | 1984-08-04 | Hitachi Ltd | Device for forming plasma film by microwave |
| JPS60134423A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Microwave plasma etching device |
-
1987
- 1987-03-06 JP JP62050090A patent/JPS63217620A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS59136130A (en) * | 1983-01-24 | 1984-08-04 | Hitachi Ltd | Device for forming plasma film by microwave |
| JPS60134423A (en) * | 1983-12-23 | 1985-07-17 | Hitachi Ltd | Microwave plasma etching device |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6436769A (en) * | 1987-04-27 | 1989-02-07 | Semiconductor Energy Lab | Plasma treatment device |
| US6838126B2 (en) | 1987-04-27 | 2005-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming I-carbon film |
| US6423383B1 (en) | 1987-04-27 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| US5858259A (en) * | 1987-04-27 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| US6217661B1 (en) | 1987-04-27 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus and method |
| JPH0362517A (en) * | 1989-03-27 | 1991-03-18 | Anelva Corp | Microwave plasma processor |
| JPH03158471A (en) * | 1989-11-15 | 1991-07-08 | Hitachi Ltd | Microwave plasma treating device |
| JPH0379421U (en) * | 1989-12-01 | 1991-08-13 | ||
| JPH03259517A (en) * | 1990-03-08 | 1991-11-19 | Nec Corp | Ecr plasma etching method |
| JPH0425022A (en) * | 1990-05-16 | 1992-01-28 | Nec Corp | Apparatus and method for microwave plasma etching |
| JPH04103783A (en) * | 1990-08-22 | 1992-04-06 | Nec Corp | Microwave plasma etching device |
| JP2000299311A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma processing system |
| JP2000299312A (en) * | 1991-04-04 | 2000-10-24 | Hitachi Ltd | Plasma treatment method and manufacture of semiconductor device |
| JPH0653170A (en) * | 1992-03-18 | 1994-02-25 | Nec Corp | Ecr plasma etcher |
| JPH08203693A (en) * | 1995-08-28 | 1996-08-09 | Semiconductor Energy Lab Co Ltd | Thin film forming device |
| US6066568A (en) * | 1997-05-14 | 2000-05-23 | Tokyo Electron Limited | Plasma treatment method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556855B2 (en) | 1993-08-20 |
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