JPS63213343A - Formation of fine pattern - Google Patents
Formation of fine patternInfo
- Publication number
- JPS63213343A JPS63213343A JP4653587A JP4653587A JPS63213343A JP S63213343 A JPS63213343 A JP S63213343A JP 4653587 A JP4653587 A JP 4653587A JP 4653587 A JP4653587 A JP 4653587A JP S63213343 A JPS63213343 A JP S63213343A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern
- resist
- thin film
- high molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000010408 film Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 21
- 230000005865 ionizing radiation Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 7
- 230000001186 cumulative effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 15
- 150000002576 ketones Chemical class 0.000 abstract description 3
- 238000001020 plasma etching Methods 0.000 abstract description 2
- 238000002791 soaking Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 238000010894 electron beam technology Methods 0.000 description 10
- 208000004117 Congenital Myasthenic Syndromes Diseases 0.000 description 9
- 239000002253 acid Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920006254 polymer film Polymers 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- SDIXRDNYIMOKSG-UHFFFAOYSA-L disodium methyl arsenate Chemical compound [Na+].[Na+].C[As]([O-])([O-])=O SDIXRDNYIMOKSG-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- JVJVAVWMGAQRFN-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JVJVAVWMGAQRFN-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229940117955 isoamyl acetate Drugs 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920002454 poly(glycidyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＬＳＩ−超ＬＳＩなどの高密度集積回路の製
造）二用いるフォトマスクなどの製造の際のリングラフ
イ一工程で用いられている微細パターン形成方法罵：関
するものである。さら（：詳しくは電離放射線（二より
露光し現像後、レジストパターンのエツジの直線性の良
いパターン形成方法及び剥離性の悪い耐ドライエツチン
グ性ネガ型電子線レジストのレジスト剥離を容易にする
方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the manufacturing of high-density integrated circuits such as LSIs and VLSIs. This is related to pattern formation method. Furthermore, the article relates to a method for forming a pattern with good straightness of the edges of a resist pattern after exposure to ionizing radiation (secondary exposure) and development, and a method for facilitating the resist stripping of dry etching-resistant negative-tone electron beam resists with poor stripping properties. It is something.
近年、半導体集積回路等の高集積化・高性能化への要求
は一層増大しつつある。このためリソグラフィー技術と
しては、従来の紫外線を用いるフォトリソグラフィーに
代わりて、より波長が短かく高エネルギーの電離放射線
、すなわち電子線・軟Ｘ線・イオンビーム等を用いるリ
ソグラフィー（二より超微細なパターン加工技術を確立
する努力が続けられている。このような半導体集積回路
の微細化に伴ない半導体及びフォトマスクの製造；：お
いては微細なパターンが要求されてきている。この要求
を満足するためには従来のウェットエツチングプロセス
（二枚わりてドライエツチングプロセスが必要となり、
レジストもドライプロセス（二対窓した耐ドライエツチ
ング性：二優れたものが使用されてきている。In recent years, demands for higher integration and higher performance of semiconductor integrated circuits and the like have been increasing. For this reason, instead of photolithography that uses conventional ultraviolet rays, lithography techniques that use shorter wavelength, high-energy ionizing radiation, such as electron beams, soft X-rays, and ion beams, Efforts are continuing to establish processing technology.As semiconductor integrated circuits become smaller, finer patterns are required in the manufacture of semiconductors and photomasks. In order to do this, a conventional wet etching process (dry etching process is required instead of two),
Dry process resists (two-layered resists with excellent dry etching resistance) have been used.
電子線レジストを例にとると、従来はポリグリシジルメ
タクリレートを中心とする高感度ネガ型レジストが用い
られていた。ところがこれらのレジストはドライエツチ
ング耐性が低い為、最近では耐ドライエツチング性の優
れたポリスチレン系の高感度ネガ型レジストが使用され
てきている。Taking electron beam resists as an example, conventionally, high-sensitivity negative resists mainly made of polyglycidyl methacrylate have been used. However, since these resists have low dry etching resistance, recently, polystyrene-based high-sensitivity negative resists, which have excellent dry etching resistance, have been used.
しかしながら上記のポリスプレン系のネガ型電子線レジ
ストは、耐ドライエツチング性は高いが、膨潤性のレジ
ストである為、現像後レジストパターンの被部分にヒゲ
状のレジスト残渣、いわゆるスカムが生じ、パターンエ
ツジの直線性が悪くなるという問題がある。上記の問題
は高感度のレジスト程顕著（ユあられれ、フォトマスク
の製造などに用いられる実用的なレジストの場合、この
現象の為に、７μｍ以下の微細パターンは形成できない
−のが現状である。However, although the above-mentioned polyprene-based negative electron beam resist has high dry etching resistance, it is a swelling resist, so after development, whisker-like resist residues, so-called scum, are formed on the areas covered by the resist pattern, resulting in pattern edges. There is a problem that the linearity of The above problem is more pronounced with high-sensitivity resists (hail, in the case of practical resists used for manufacturing photomasks, etc., it is currently impossible to form fine patterns of 7 μm or less due to this phenomenon). .
また、上述したような耐ドライエツチング性のネガ型レ
ジストは、被エツチング加工層をエツチングした後でレ
ジストを基板から剥離する・際、レジストが非常に剥れ
（ユくいという大きな問題がある。Further, the above-mentioned dry etching resistant negative type resist has a major problem in that the resist peels off very much when the resist is peeled off from the substrate after etching the layer to be etched.
： 現在のレジストの剥離手段としては、硫酸十過酸化
水素のような強酸水溶液を用いる方法と酸素プラズマア
ッシングによる方法とがある。: Current resist stripping methods include a method using a strong acid aqueous solution such as sulfuric acid and decahydrogen peroxide, and a method using oxygen plasma ashing.
前者は、フォトマスクのクロムなどのパターン材料を劣
化させ易いという悪影響があり、取扱い上の危険性も大
きく、レジスト剥離効果の活性時間が短く経済的でない
などの欠点がある。The former has the disadvantage that it tends to deteriorate the pattern material such as chromium of the photomask, is very dangerous in handling, and is not economical because the active time of the resist stripping effect is short.
後者は、剥離（二時間がかかり、大量（二処理できない
という問題がある。したがって理想的なレジストの剥離
は、フォトマスクへの影響がなく、安全かつ短時間で大
量に処理できるものが良いのであるが、このような要件
を満たして剥離できるネガ型レジストは存在しない。The problem with the latter is that it takes two hours to remove the resist, and it cannot be processed in large quantities.Therefore, the ideal resist removal method is one that does not affect the photomask and can be processed safely and in large quantities in a short period of time. However, there is no negative resist that satisfies these requirements and can be removed.
一方、ポジ型電子線レジストは微細パターンの解像性は
優れていても、耐ドライエツチング性の点で劣りており
、ドライエツチング礪：使えないレジストが大部分であ
る。On the other hand, although positive electron beam resists have excellent resolution of fine patterns, they are inferior in dry etching resistance, and most resists are unusable due to dry etching defects.
そこで本発明が解決しようとする問題点は、パターンエ
ツジの直線性が良い、微細なレジストパターンの形成が
可能であり、且つレジストの剥離が容易な微細パターン
の形成方法を提供することにある。SUMMARY OF THE INVENTION The problem to be solved by the present invention is to provide a method for forming a fine pattern that allows the formation of a fine resist pattern with good linearity of pattern edges, and allows for easy peeling of the resist.
本発明者等は上記の問題点を解決すべく徨々研究の結果
、電離放射線レジストと基板との間（二電離放射線レジ
ストよりも耐ドライエツチング性が低く、かつ有機溶剤
への溶解性の良い高分子の単分子膜の単層もしくは多層
から成る高分子薄膜層を設けること１；よって、上記の
問題点を解決しうろことを見い出して本発明を完成させ
たものである。As a result of extensive research in order to solve the above problems, the present inventors have found that the gap between the ionizing radiation resist and the substrate (which has lower dry etching resistance than the diionizing radiation resist and has good solubility in organic solvents) Providing a thin polymer film layer consisting of a single layer or multiple layers of a monomolecular polymer film 1; Therefore, the present invention has been completed by finding a way to solve the above problems.
即ち、本発明は「被エツチング加工層上に高分子単分子
膜もしくはその累積膜からなる高分子薄膜層を設ける工
程と、該高分子薄膜層上シー耐ドライエツチング性電離
放射線レジスト層を設ける工程と、電離放射線レジスト
層に電離放射線；二よりパターンを描画し、次いで現像
した後、露出した高分子薄膜層を酸素プラズマ（−より
ドライエツチングし、パターン化する工程と、次（二液
エツチング加工層をエツチングしてパターン形成する工
程と、高分子薄膜層を有機溶剤；；より溶解除去するこ
と１；より電離放射線レジスト層を同時に剥離する工程
とからなることを特徴とする微細パターンの形成方法。That is, the present invention provides a step of providing a thin polymer film layer consisting of a polymer monolayer or a cumulative film thereof on a layer to be etched, and a step of providing a dry etching resistant ionizing radiation resist layer on the thin polymer layer. After drawing a second pattern with ionizing radiation on the resist layer and developing it, the exposed polymer thin film layer is dry etched with oxygen plasma (-) to form a pattern, and the next step (two-component etching process) is performed. A method for forming a fine pattern comprising the steps of etching the layer to form a pattern, dissolving and removing the thin polymer film layer using an organic solvent, and simultaneously peeling off the ionizing radiation resist layer. .
」を要旨とするものである。” is the gist.
而して、本発明：二おいて適用しつる電離放射線レジス
ト層の材料として、具体的に以下のものがあげられる。Specifically, the following materials can be mentioned as materials for the ionizing radiation resist layer applied in the second aspect of the present invention.
例えば、耐ドライエツチング性ネガ型ＦＢレジストであ
る東洋曹達工業■裂りロロメチル化ポリスチレンＣＭＳ
−ＥＸ（Ｒ）、ＣＭＳ−１ｉ：Ｘ、ＣＭＳ−ＥＸ（Ｓ）
、ＣＭＳ −ＥＸ（ＳＳ）、ＣＭＳ−ＥＸ（ＳＳＳ）、
αＭ−ＣＭＳ（Ｒ）、αＭ−ＣＭＳ（Ｓ）、日本合成ゴ
ム■裂クロル化ポリメチルスチレンＭＩｉ’Ｓ−Ｅ、日
立化成工業■製ヨウ素化ポリスチレンＲＡＹＣＡ８Ｔ
ＲＥ−’１００ＯＮソマール工業■製ハロゲン化ポリ
スチレンコポリマーＳＥＬ−Ｎｇ！ｒ／、ＳＥ’Ｌ−１
１ｔ！２などがあげられる。For example, Toyo Soda Kogyo's tear-rolomethylated polystyrene CMS is a dry-etching-resistant negative FB resist.
-EX(R), CMS-1i:X, CMS-EX(S)
, CMS-EX(SS), CMS-EX(SSS),
αM-CMS(R), αM-CMS(S), Japan Synthetic Rubber ■Cracked chlorinated polymethylstyrene MIi'SE-E, Hitachi Chemical ■Iodinated polystyrene RAYCA8T
RE-'100ON Halogenated polystyrene copolymer SEL-Ng manufactured by Somar Kogyo ■! r/, SE'L-1
1t! 2 etc. can be mentioned.
次に高分子薄膜層として、高分子単分子膜もしくはその
累積膜を適用しうる。この膜は超薄膜であり、有機溶剤
への溶解性が良く、且つ耐ドライエツチング性が低い。Next, as the polymer thin film layer, a polymer monolayer or a cumulative film thereof can be applied. This film is extremely thin, has good solubility in organic solvents, and has low dry etching resistance.
高分子単分子膜は分子を水面上に展開するＬＢ法（Ｌａ
ｎｇｒｎｕｉｒ −ＢｌｏｄｇＩｔｔ法）によって形
成するのが好ましい。水面上に形成された単分子膜を固
体基板上へ移し取る方法は、水面上の単分子膜：：一定
表面圧をかけ、層を維持しながら基板を膜面ζ二対して
垂直に上下させて移し取る垂直浸漬法と、基板を膜面に
対して平行セおき、上下させること４二より単分子膜を
付着させろ水平付着法の二通りが可能である。Polymer monolayers are produced using the LB method (La
It is preferable to form it by the ngrnuir-BlodgItt method). The method for transferring a monomolecular film formed on a water surface onto a solid substrate is to apply a constant surface pressure and move the substrate up and down perpendicular to the film surface while maintaining the layer. Two methods are possible: a vertical dipping method in which the monomolecular film is deposited by setting the substrate parallel to the film surface and moving it up and down (42).
高分子単分子膜の累積膜の形成方法としては、■高分子
を用いて水面上で単分子膜を形成し、累積する方法と、
■単量体分子の単分子膜を累積したのち（二重合する方
法と、■単量体分子を水面上で重合させてから累積する
方法の三つの方法がある。このうち、本発明の微細パタ
ーン形成方法（二用い得る高分子薄膜の形成方法として
は、■と■の方法が均一な単分子膜を容易（二形成し得
る方法として特に好ましく用いられる。Methods for forming a cumulative film of a polymer monolayer include: 1. Forming a monomolecular film on the water surface using a polymer and accumulating it;
There are three methods: ① a method in which a monomolecular film of monomer molecules is accumulated (polymerized) and ② a method in which monomer molecules are polymerized on the water surface and then accumulated. Pattern forming methods (2) As methods for forming polymer thin films that can be used, methods (1) and (2) are particularly preferably used as methods that can easily form a uniform monomolecular film.
′Ｉ■の方法に用いられる高分子としては、例えばアク
リレート系高分子であるポリメチルメタクリレート、ポ
リエチルメタクリレート、ポリプロピルメタクリレート
など、一般式
％式％）
で表わされる高分子、又は側鎖が水素以外の分子で置換
されているトリデカフルオロオ／Ｉ’ニルメタクリレー
トやヘプタデカフルオロオクタニルメタクリレートなど
と、ポリビニルブチラール、ポリビニルブチラールなど
、一般式％式％）
（二て表わされるポリアセタールがある。The polymers used in the method of ``I■'' include, for example, acrylate polymers such as polymethyl methacrylate, polyethyl methacrylate, and polypropyl methacrylate, or polymers with the general formula %) or those whose side chains are hydrogen. There are polyacetals represented by the general formula %, such as tridecafluoro/I'yl methacrylate and heptadecafluorooctanyl methacrylate, which are substituted with other molecules, and polyvinyl butyral, polyvinyl butyral, etc.
■の方法に用いられる単量体分子としては、不飽和結合
を有する長鎖モノカルボン酸であるペンタデカーコ、弘
−ジイノイックアシド、トリコサ−１０，／二一ジイノ
イック７シド、ヘプタデカ−２、ダージイノイックアシ
ド、ペンタコサ−１０，／コージイノイックアシド、ノ
ナデカーコ、ダージイノイックアシド、ヘプタコサ−１
０％ｌコージイノイックアシド、ヘンアイコサーコ、ダ
ージイノイックアンド、ノナコサ−７θ、／コージイノ
イックアシドなどが好ましく用いられ単層又は多層膜を
累積後、ＵＶ照射にて容易（二重金膜が得られる。The monomer molecules used in the method (2) include pentadecarco, which is a long-chain monocarboxylic acid having an unsaturated bond, Hiro-dinoic acid, tricocer-10,/21 diinoic 7-side, heptadeca-2, and diinoic acid. Inoic acid, pentacosal-10, / Kojiinoic acid, nonadecaco, dirgyinoic acid, heptacosa-1
0%l Kodiinoic Acid, Henicosarco, Dirty Inoic And, Nonacosa-7θ, /Kojiinoic Acid, etc. are preferably used, and after accumulating a single layer or multilayer film, UV irradiation can easily be used (double gold film can be easily formed). can get.
以下、本発明を図面を用いて更；；詳細に説明する。第
１図（ａ ） （：示す如く、本発明：；係る高分子材
料あるいは単量体分子を被エツチング加工層コな表面へ
＝有するＳ１９エバなどの半導体基板もしくは光学研摩
ガラスなどのマスク基板ｌ上に垂直浸漬法あるいは水平
付着法等の単分子層累積法；：より単層もしくは多層を
１〜５０層累積し、加熱乾燥処理やＵＶ照射処理を施し
て厚さ１Ｏ−１０００Ｘ程度の下層高分子薄膜層３を形
成する。加熱乾燥条件は、一般（二温度６０〜７７０℃
、時間ｉｏ〜３０分間程度適している。Hereinafter, the present invention will be further explained in detail using the drawings. FIG. 1(a) (As shown, the present invention: A semiconductor substrate such as S19 evaporator or a mask substrate such as optically polished glass having such polymeric material or monomer molecules on the surface of the layer to be etched. Monomolecular layer accumulation method such as vertical dipping method or horizontal deposition method: 1 to 50 monolayers or multilayers are accumulated on top, and then heat-drying treatment or UV irradiation treatment is performed to obtain a lower layer height of about 10-1000X in thickness. A molecular thin film layer 3 is formed.Heat drying conditions are general (two temperatures of 60 to 770°C).
, a period of about 30 minutes is suitable.
続いて第１図（ｂ ） ｌ：、示す如（、高分子薄膜層
３上に本発明）二て用いる電子線レジストをスピンコー
ティング等の常法により均一に塗布し、温度６０〜−０
０℃、時間２０〜６０分間の加熱乾燥処理を施して厚さ
Ｏｏ−〜−μｍの上層レジスト層弘を形成する。Subsequently, as shown in FIG. 1(b), an electron beam resist used in the present invention was uniformly applied onto the polymer thin film layer 3 by a conventional method such as spin coating, and the temperature was 60 to -0.
A heat drying process is performed at 0° C. for 20 to 60 minutes to form an upper resist layer having a thickness of Oo−−μm.
次に、第１図（Ｃ）：二示す如くレジスト層ｑの所望部
分に常法に従りて電子線、軟Ｘ線等の電離放射線５をパ
ターン照射してパターン描画を行い、更に所定の現像液
で現像して未照射部りレジストパターン６′を形成する
。この段階では、レジストパターン乙の裾部分にはスカ
ム７の存在が認められパターンエツジの直線性は良くな
い。Next, as shown in FIG. 1(C):2, a pattern is drawn by irradiating a desired portion of the resist layer q with a pattern of ionizing radiation 5 such as an electron beam or soft X-ray according to a conventional method. It is developed with a developer to form a resist pattern 6' in the non-irradiated area. At this stage, the presence of scum 7 is recognized at the hem of resist pattern B, and the linearity of the pattern edge is not good.
次に、高分子薄膜層３の露出した部分を、第１図（・）
（二示す如く、酸素プラズマＳにてドライエツチングし
てスカムの除去されたエツジの直線性の良い二層のパタ
ーン６′及びデを形成する。この際の条件は、圧力Ｑ、
！〜／ Ｔｏｒｒ 。Next, the exposed part of the polymer thin film layer 3 is
(As shown in Figure 2, dry etching is performed using oxygen plasma S to form a two-layer pattern 6' and D with good linearity of edges from which scum has been removed.The conditions at this time are pressure Q,
! ~/Torr.
出力ｌθＯｗｅ：て７〜１０分間処理することにより行
なわれる。Output lθOwe: This is performed by processing for 7 to 10 minutes.
被エツチング加工層−のエツチングは、本発明の趣旨か
らドライエツチングが最適であるが、必ずしも限定され
ずウェットエツチングも可能である。第１図（ｆ）はレ
ジストパターン６′を一マスキング材としてドライエツ
チングし、微細ン６′は、ケトンやエステル等の有機溶
剤中シニ浚潰することにより、高分子薄膜層パターンデ
から容易に剥離され、第１図（ｇ ） ｌ；示す如く、
基板ｌ上（二微細パターン１０が形成され、リソグラフ
ィ一工程のｌサイクルが終了する。For etching of the layer to be etched, dry etching is most suitable from the purpose of the present invention, but this is not necessarily limited, and wet etching is also possible. In FIG. 1(f), the resist pattern 6' is used as a masking material by dry etching, and the fine holes 6' are easily removed from the polymer thin film layer pattern by dry etching in an organic solvent such as ketone or ester. Peeled off, as shown in Figure 1 (g) l;
Two fine patterns 10 are formed on the substrate l, and one cycle of one lithography process is completed.
上層の耐ドライエツチング性電離放射線レジストパター
ンのスカムは耐ドライエツチング性の低い下層の高分子
薄膜層上：二位置する為、高分子薄膜層の酸素プラズマ
エツチングの際檻二容易（：取り除かれ、エツジの直線
性の良いレジストパターンが形成される。また、このよ
う（二形成された二層パターンの下層は、有機溶剤への
溶解性が高いことから、パターン形成された基板をケト
ンなどの有機溶剤中へ浸漬しておくだけで、容易に溶解
除去し、電離放射線レジスト層を剥離することができる
。The scum of the upper dry etching resistant ionizing radiation resist pattern is located on the lower polymer thin film layer with low dry etching resistance, so it is easily removed during oxygen plasma etching of the polymer thin film layer. A resist pattern with good edge linearity is formed.Also, since the lower layer of the two-layer pattern formed in this way has high solubility in organic solvents, it is possible to Just by immersing it in a solvent, it can be easily dissolved and removed and the ionizing radiation resist layer can be peeled off.
実施例１ − 水面上にポリビニルドデシラールの０．０／−者 一マｔ％、ベンゼン溶液を滴下して展開しておく。 Example 1 - 0.0/- of polyvinyl dodesyral on the water surface 1% benzene solution is added dropwise to develop.
−一定圧力をかげながら、フォトマスク用クロム基板上
：：垂直浸漬法を繰り返すとと；二よりポリビニルドデ
シラールの単分子膜を２０層累積して厚さ１３０Ａの極
めて均一性の優れた高分子薄膜を得た。１２０℃で２Ｑ
分間の加熱処理の後、この高分子薄膜層の上書：クロロ
メチル化ポリスチレン（例えば、東洋曹達工業■製ＣＭ
Ｓ−ＸＸ（Ｓ）など）をスピンコーティングし、１１０
℃で３０分間加熱乾燥して厚さ０．Ａμ風のレジスト膜
を得た。続いてレジスト膜の所望部分（；、常法（：従
クズ加速電圧１０Ｋｖにて／Ｘｌ０−・Ｃ／ｃｉｔの電
子線でパターン照射し、酢酸イソアミル／エチルセロソ
ルブ＝ ４！０ ／ Ａ Ｏｂ’らなる現像液で処理し
、イソプロピルアルコールでリンスして、最小線幅Ｏ１
Ｓμｍからなる０Ｍ８のレジストパターンを得た。- By repeating the vertical dipping method on a chromium substrate for a photomask while applying a constant pressure, 20 layers of polyvinyl dodesyral monolayer were deposited on the chromium substrate for a photomask with a thickness of 130A with excellent uniformity. A molecular thin film was obtained. 2Q at 120℃
After a heat treatment for 1 minute, this thin polymer film layer is overlaid with chloromethylated polystyrene (e.g., CM manufactured by Toyo Soda Kogyo ■).
S-XX (S), etc.) and 110
Heat and dry at ℃ for 30 minutes to a thickness of 0. An Aμ style resist film was obtained. Subsequently, a desired part of the resist film (;, a conventional method (: pattern irradiation with an electron beam of /Xl0-・C/cit at a waste acceleration voltage of 10 Kv, isoamyl acetate/ethyl cellosolve = 4!0/A Ob' et al. The minimum line width is O1.
A resist pattern of 0M8 consisting of S μm was obtained.
次にＣＭＳの現像；二よりて露出した部分を酸素プラズ
マ処理（／ Ｔｏｒｒ、 ／ ００Ｗ％２分間）してＣ
ＭＳとポリビニルドデシラールの二層からなるパターン
エツジの直線性の良いパターンを得た。Next, CMS development; the exposed part was treated with oxygen plasma (/Torr, /00W% for 2 minutes) and then exposed to CMS.
A pattern with good linearity of pattern edges was obtained, consisting of two layers of MS and polyvinyl dodesyral.
続いて、露出したクロム部分を四塩化炭素と酸素からな
るプラズマ中で、出力３００Ｗにてインブチルケトン中
（：３分間浸漬することＣ二より剥離し、エツジの直線
性の良い最小線幅Ｏ０Ｓμｍのクロムパターンを有する
フォトマスクを得た。Next, the exposed chromium part was immersed in plasma consisting of carbon tetrachloride and oxygen in inbutyl ketone at an output of 300 W for 3 minutes. A photomask having a chrome pattern of
実施例コ
実施例／と同様（−シてフォトマスク用クロム基板上に
ペンタコサ−ＩＯ１ｌユージイノイックアシドを７３層
累積し、−分間ＵＶ照射した後、ｔ ／ ＋７℃ｌ二て
、２０分間加熱処理して厚さ３００にの膜を形成した。Example Same as Example/(73 layers of Pentacocer-IO1L eugeinoic acid were accumulated on a chromium substrate for a photomask, irradiated with UV for - minutes, and then heated at t/+7°C for 20 minutes. A film having a thickness of 300 mm was formed by processing.
この層の上に、ハロゲン化ポリスチレンコポリマーから
なる電子線レジスト（例えば、ソマール工業■製５ＥＬ
−Ｎよｚｔ）をスピンコーティングし、１２０℃、３０
分間加熱乾燥して厚さＯ，Ｓμｍのレジスト層を形成し
た。次（二上層のレジストを電子線でパターン描画し、
現像してレジストパターンを形成した。On top of this layer, an electron beam resist made of halogenated polystyrene copolymer (for example, 5EL manufactured by Somar Kogyo) is applied.
-Nyozt), and 120℃, 30
A resist layer having a thickness of O.S.mu.m was formed by heating and drying for minutes. Next (draw a pattern on the second upper layer resist with an electron beam,
It was developed to form a resist pattern.
続いて、現像で露出した下層部分を酸素プラムを四塩化
炭素と酸素から成るプラズマ（３００Ｗ、を分間）（：
てドライエツチングした。エツチング後、上記基板をメ
チルエチルケトンに浸漬してレジストパターンを剥離し
て、ウェットエツチングプロセスでは得られなかった高
精度（最小線幅０．１７μｍ）のフォトマスクが容易に
得られた。Next, the lower layer exposed by the development was exposed to oxygen plasma (300 W, for minutes) consisting of carbon tetrachloride and oxygen.
and dry etched. After etching, the substrate was immersed in methyl ethyl ketone to peel off the resist pattern, and a photomask with high precision (minimum line width 0.17 μm), which could not be obtained by the wet etching process, was easily obtained.
以上、詳記した通り、本発明（二よれば、パターンエツ
ジの直線性が良いレジストパターンを形成し、エツチン
グして微細パターンを高精度□につくることができ、且
つレジストの剥離を工’＝’１
ッチング製品へ影響を及ぼすことなく、安全（二且つ容
易に行うことができる。As described in detail above, according to the present invention (2), a resist pattern with good linearity of pattern edges can be formed, a fine pattern can be formed with high accuracy by etching, and the peeling of the resist can be prevented. 1) It is safe (2) and can be done easily without affecting the product.
偶因面の簡単な説明
第１図（ａ）〜（ｇ）は本発明（二よる微細パターン形
成方法の工程の一例を示す断面模式図である。Brief Explanation of the Contingency Plane FIGS. 1(a) to 1(g) are schematic cross-sectional views showing an example of the steps of the fine pattern forming method according to the present invention.
ｌ・・・・・・・・・基板
コ・・・・・・・・・被エツチング加工層３・・・・・
・・・・下層高分子薄膜層り・・・・・・・・・上層レ
ジスト層
！・・・・・・・・・電離放射線
Ａ、Ａ’＠・・・・・レジストパターン７・曇・・ｅ・
書・争スカムl...Substrate...Layer to be etched 3...
...Lower polymer thin film layer...Top resist layer!・・・・・・・・・Ionizing radiation A, A'@・・・Resist pattern 7・Cloudy・・e・
book/war scum
Claims (1)
積膜からなる高分子薄膜層を設ける工程と、該高分子薄
膜層上に耐ドライエッチング性電離放射線レジスト層を
設ける工程と、電離放射線レジスト層に電離放射線によ
りパターンを描画し、次いで現像した後、露出した高分
子薄膜層を酸素プラズマによりドライエッチングし、パ
ターン化する工程と、次に被エッチング加工層をエッチ
ングしてパターン形成する工程と、高分子薄膜層を有機
溶剤により溶解除去することにより電離放射線レジスト
層を同時に剥離する工程とからなることを特徴とする微
細パターンの形成方法。A step of providing a polymer thin film layer consisting of a polymer monomolecular film or a cumulative film thereof on the layer to be etched, a step of providing a dry etching resistant ionizing radiation resist layer on the polymer thin film layer, and an ionizing radiation resist layer. a step of drawing a pattern with ionizing radiation, then developing, dry etching the exposed polymer thin film layer with oxygen plasma to form a pattern, and then etching the layer to be etched to form a pattern; A method for forming a fine pattern, comprising the step of simultaneously removing an ionizing radiation resist layer by dissolving and removing a polymer thin film layer with an organic solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4653587A JPS63213343A (en) | 1987-02-28 | 1987-02-28 | Formation of fine pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4653587A JPS63213343A (en) | 1987-02-28 | 1987-02-28 | Formation of fine pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63213343A true JPS63213343A (en) | 1988-09-06 |
Family
ID=12749983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4653587A Pending JPS63213343A (en) | 1987-02-28 | 1987-02-28 | Formation of fine pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63213343A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272520B1 (en) * | 1997-12-29 | 2000-12-01 | 김영환 | Pattern forming method of semiconductor device |
| KR100467496B1 (en) * | 2002-06-26 | 2005-01-24 | 동부전자 주식회사 | Method for fabricating semiconductor |
| KR100843043B1 (en) * | 2006-06-28 | 2008-07-01 | 주식회사 하이닉스반도체 | Method for forming resist pattern of semiconductor device |
-
1987
- 1987-02-28 JP JP4653587A patent/JPS63213343A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100272520B1 (en) * | 1997-12-29 | 2000-12-01 | 김영환 | Pattern forming method of semiconductor device |
| KR100467496B1 (en) * | 2002-06-26 | 2005-01-24 | 동부전자 주식회사 | Method for fabricating semiconductor |
| KR100843043B1 (en) * | 2006-06-28 | 2008-07-01 | 주식회사 하이닉스반도체 | Method for forming resist pattern of semiconductor device |
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