JPS63208228A - Formation of semiconductor sealing resin - Google Patents
Formation of semiconductor sealing resinInfo
- Publication number
- JPS63208228A JPS63208228A JP4002087A JP4002087A JPS63208228A JP S63208228 A JPS63208228 A JP S63208228A JP 4002087 A JP4002087 A JP 4002087A JP 4002087 A JP4002087 A JP 4002087A JP S63208228 A JPS63208228 A JP S63208228A
- Authority
- JP
- Japan
- Prior art keywords
- molding
- resin
- metal mold
- mold
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 30
- 239000011347 resin Substances 0.000 title claims abstract description 30
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000007789 sealing Methods 0.000 title abstract description 6
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000000465 moulding Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 7
- 239000011342 resin composition Substances 0.000 abstract description 9
- 239000000654 additive Substances 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 7
- 238000007254 oxidation reaction Methods 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 6
- 238000001721 transfer moulding Methods 0.000 abstract description 6
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 4
- 238000001746 injection moulding Methods 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 5
- 239000003822 epoxy resin Substances 0.000 description 14
- 229920000647 polyepoxide Polymers 0.000 description 14
- 239000000203 mixture Substances 0.000 description 7
- 239000006082 mold release agent Substances 0.000 description 6
- 238000010186 staining Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical class [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、半導体封止用樹脂の成形方法に係り、特に
射出成形やトランスファー成形における金型汚れを抑制
して連続成形性の向上を図ることができる半導体封止用
樹脂の成形方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for molding resin for semiconductor encapsulation, and in particular, to improve continuous moldability by suppressing mold contamination in injection molding and transfer molding. The present invention relates to a method for molding resin for semiconductor encapsulation.
［従来の技術］
半導体封止用樹脂の成形においては、通常使用される樹
脂が熱硬化性樹脂であってその樹脂を硬化させる必要か
ら１５０℃を越える高温下で成形されるのが普通であり
、また、多数の成形品を連続的に成形する必要があるこ
とから成形に供され□ る樹脂組成物中にワックス、油
脂酸等の離型剤を添加し、金型表面からの樹脂の離型性
の向上を図ることが行われている。[Prior Art] In molding resin for semiconductor encapsulation, the resin normally used is a thermosetting resin, and because it is necessary to harden the resin, molding is usually performed at a high temperature exceeding 150°C. In addition, since it is necessary to continuously mold a large number of molded products, mold release agents such as wax and oil/fat acids are added to the resin composition used for molding to prevent the release of the resin from the mold surface. Efforts are being made to improve moldability.
しかしながら、樹脂組成物中に離型剤をいくら添加して
も金型汚れを完全に防止することはできず、これが連続
成形性の重大な障害になっていた。However, no matter how much release agent is added to the resin composition, mold staining cannot be completely prevented, and this has been a serious obstacle to continuous moldability.
し発明が解決しようとする問題点］
そこで、本発明者等は、この金型汚れが発生する原因に
ついて鋭意研究を重ねた結果、樹脂組成物中に添加され
る離型剤、低応力化剤、カップリング剤等の種々の添加
剤が高温下での成形の際に空気酸化を受け、酸化された
添加剤が金型表面に付着し、これが引金になって金型汚
れが拡がっていくのが主たる原因であり、高温に晒され
るこの金型表面での空気酸化を可及的に抑制することに
よって金型汚れを可及的に抑制できることを見出し、本
発明に到達したものである。[Problems to be Solved by the Invention] Therefore, as a result of extensive research into the causes of this mold staining, the present inventors have developed a mold release agent and stress reducing agent that are added to resin compositions. , various additives such as coupling agents undergo air oxidation during molding at high temperatures, and the oxidized additives adhere to the mold surface, which triggers the spread of mold contamination. This is the main cause, and we have discovered that mold staining can be suppressed as much as possible by suppressing air oxidation on the surface of the mold, which is exposed to high temperatures, and have arrived at the present invention.
従って、本発明の目的は、半導体封止用樹脂成形品を連
続成形する際に、金型表面での空気酸化を可及的に抑制
することができる半導体封止用樹脂の成形方法を提供す
ることにある。Therefore, an object of the present invention is to provide a method for molding resin for semiconductor encapsulation, which can suppress air oxidation on the mold surface as much as possible when continuously molding resin molded products for semiconductor encapsulation. There is a particular thing.
［問題点を解決するための手段］
すなわち、本発明は、半導体封止用樹脂を成形するに′
当り、不活性ガス雰囲気下及び／又は減圧下で樹脂の成
形を行う半導体封止用樹脂の成形方法である。[Means for Solving the Problems] That is, the present invention provides a method for molding resin for semiconductor encapsulation.
This is a method for molding resin for semiconductor encapsulation, in which the resin is molded under an inert gas atmosphere and/or under reduced pressure.
本発明方法が適用される半導体封止用樹脂の成形手段と
しては、それが熱硬化性樹脂の成形が可能な手段であれ
ば如何なる手段であってもよいが、通常、マルチプラン
ジャトランスファ成形部等を使用するトランスファ成形
、射出成形、圧縮成形等の手段を挙げることができる。The method for molding the semiconductor encapsulating resin to which the method of the present invention is applied may be any method as long as it is capable of molding a thermosetting resin, but usually a multi-plunger transfer molding unit, etc. Transfer molding, injection molding, compression molding, and the like can be mentioned.
そして、これらの樹脂の成形を不活性ガス雰囲気下で行
うには、ヘリウム、ネオン、アルゴン、クリプトン等の
希ガス、窒素ガス、炭酸ガス等の不活性ガス、好ましく
はアルゴンガスや窒素ガスを使用し、成形機全体をシー
ルしてもよいし、また、成形部分のみをシールしてもよ
く、この際にシールは密閉することにより行うこともで
きるが、不活性ガスの気流を流すことによっても行うこ
とができる。In order to mold these resins in an inert gas atmosphere, a rare gas such as helium, neon, argon, or krypton, or an inert gas such as nitrogen gas or carbon dioxide gas, preferably argon gas or nitrogen gas, is used. However, the entire molding machine may be sealed, or only the molded part may be sealed. In this case, sealing can be done by sealing, but it can also be done by flowing an inert gas stream. It can be carried out.
また、樹脂の成形を減圧下に行うには、成形機の全体又
は成形部分を密閉して減圧することによって行うことが
できるが、空気の漏洩がある場合には周囲を不活性ガス
雰囲気とすることが望ましい。In addition, resin molding can be performed under reduced pressure by sealing the entire molding machine or the molding part and reducing the pressure, but if there is an air leak, create an inert gas atmosphere around it. This is desirable.
また、本発明方法が適用される半導体封止用樹脂として
は、この目的で使用しくｑる従来公知の種々の熱硬化性
樹脂を挙げることができるが、好ましくは電気的特性や
機械的特性に優れているエポキシ樹脂組成物であり、具
体的には、ビスフェノール型エポキシ樹脂、フェノール
ノボラック型エポキシ樹脂、タレゾールノボラック型エ
ポキシ樹脂等のエポキシ基を有する各種のエポキシ樹脂
に、溶融シリカ等の無機質充填剤や、フェノールノボラ
ック類等のエポキシ樹脂と架橋反応をする硬化剤や、イ
ミダゾール類、第三級アミン類、ホスフィン化合物類、
有機アルミニウム化合物類等のエポキシ樹脂と硬化剤と
の架橋反応の触媒となる硬化促進剤や、種々のハロゲン
化合物、燐化合物、アンチモン酸化物、無機水酸化物等
の難燃剤及び難燃助剤や、ワックス、油脂酸等の離型剤
や、着色剤等のその他必要に応じて添加される添加剤を
必要に応じて必要な範囲で配合してなるエポキシ樹脂組
成物である。Further, as the resin for semiconductor encapsulation to which the method of the present invention is applied, there can be mentioned various conventionally known thermosetting resins that can be used for this purpose, but preferably those resins have good electrical properties and mechanical properties. It is an excellent epoxy resin composition, and specifically, various epoxy resins having epoxy groups such as bisphenol type epoxy resin, phenol novolac type epoxy resin, Talezol novolac type epoxy resin, etc., are filled with inorganic material such as fused silica. curing agents that crosslink with epoxy resins such as phenol novolaks, imidazoles, tertiary amines, phosphine compounds,
Curing accelerators that catalyze the crosslinking reaction between epoxy resins and curing agents such as organoaluminum compounds, flame retardants and flame retardant aids such as various halogen compounds, phosphorus compounds, antimony oxides, and inorganic hydroxides. It is an epoxy resin composition formed by blending mold release agents such as waxes, oils and acids, and other additives such as colorants in the necessary ranges as necessary.
［作 用］
本発明の半導体封止用樹脂の成形方法によれば、成形時
にその樹脂組成物が金型表面で高温下に晒されても、成
形条件が不活性ガス雰囲気下及び／又は減圧下に維持さ
れているので、樹脂組成物中の種々の添加剤が金型表面
で空気中の酸素により空気酸化されるのを可及的に抑制
することができ、これによって金型汚れを防止すること
ができると考えられる。[Function] According to the method for molding resin for semiconductor encapsulation of the present invention, even if the resin composition is exposed to high temperature on the mold surface during molding, the molding conditions are inert gas atmosphere and/or reduced pressure. Since the resin composition is maintained at a low temperature, air oxidation of various additives in the resin composition by oxygen in the air on the mold surface can be suppressed as much as possible, thereby preventing mold fouling. It is thought that it is possible to do so.
［実施例］
以下、実施例及び比較例に基いて、本発明方法を具体的
に説明する。[Example] Hereinafter, the method of the present invention will be specifically explained based on Examples and Comparative Examples.
実施例
無機フィラー４００重湯部と、カップリング剤３重量部
と、エポキシ樹脂８０重量部と、硬化剤２０重量部と、
臭素化エポキシ樹脂２０重量部と、硬化促進剤０．５重
量部と、離型剤２重量部と、着色剤２重量部の組成を有
するエポキシ樹脂組成物を使用し、マルチプランジャー
トランスファー成形ａ（トー’７＠製ＴｌＳ−２０−Ｃ
Ｂ３） を使用し、成形部分に窒素ガスを流しながら成
形部分周辺に窒素ガス雰囲気下を形成し、金型温度１８
５℃、成形圧力３０Ｋｇｆ／ＣＩｉ、成形時間１８秒、
予備加熱無しの条件で試料成形品を連続成形し、金型汚
れ（金型の突出しピンの鏡面部の全面が曇る状態）が発
生するまでのショツト数を測定すると共に、このときの
金型汚れの成分をエックス線マイクロアナライザによる
元素分析及びＦＴ−ＩＲを測定し、金型汚れの原因を調
べた。結果は、金型汚れに至るまでのショツト数が１，
２００であり、金型汚れ成分は３ｉとＣｆｆ１の元素を
有するシリコン系であり、エポキシ樹脂組成物中のカッ
プリング剤、離型剤、低応力化剤等がそのまま析出した
ものであることが判明した。Example 400 parts by weight of inorganic filler, 3 parts by weight of coupling agent, 80 parts by weight of epoxy resin, 20 parts by weight of curing agent,
Using an epoxy resin composition having a composition of 20 parts by weight of a brominated epoxy resin, 0.5 parts by weight of a curing accelerator, 2 parts by weight of a mold release agent, and 2 parts by weight of a colorant, multi-plunger transfer molding a (To'7@TlS-20-C
Using B3), a nitrogen gas atmosphere is created around the molding part while flowing nitrogen gas to the molding part, and the mold temperature is 18.
5℃, molding pressure 30Kgf/CIi, molding time 18 seconds,
Sample molded products were continuously molded without preheating, and the number of shots until mold contamination (the entire surface of the mirror surface of the ejector pin of the mold became cloudy) was measured, and the mold contamination at this time was measured. Elemental analysis using an X-ray microanalyzer and FT-IR were performed on the components to investigate the cause of mold staining. As a result, the number of shots until mold contamination is 1,
200, and it was found that the mold stain component was silicon-based containing elements 3i and Cff1, and that the coupling agent, mold release agent, stress reducing agent, etc. in the epoxy resin composition were precipitated as they were. did.
比較例
上記実施例と同じエポキシ樹脂組成物を使用し、窒素ガ
ス雰囲気下を形成しなかった以外は上記実圧倒と全く同
様にして試料成形品を連続成形を行い、金型汚れ発生ま
でのショツト数と金型汚れ成分を調べた。結果、金型汚
れに至るまでのショツト数が４００であり、金型汚れ成
分は３ｉ、３ｒｓｂ等の元素を有し、エポキシ樹脂組成
物中のカップリング剤、離型剤、低応力化剤等が空気酸
化を受けて生成したものであることが判明した。Comparative Example The same epoxy resin composition as in the above example was used, and sample molded products were continuously molded in exactly the same manner as in the actual test above, except that the nitrogen gas atmosphere was not created. The number and mold stain components were investigated. As a result, the number of shots until mold staining was 400, and the mold staining components contained elements such as 3i and 3rsb, and included coupling agents, mold release agents, stress reducing agents, etc. in the epoxy resin composition. was found to be produced by air oxidation.
［発明の効果］
本発明方法によれば、半導体封止用樹脂成形品を連続成
形する際に、金型表面での空気酸化を可及的に抑制する
ことができ、これによって樹脂組成物中の種々の添加剤
が金型表面に付着して金型汚れが発生するのを可及的に
防止することができ、半導体対重用樹脂の成形における
連続成形性を著しく向上させることができる。[Effects of the Invention] According to the method of the present invention, when continuously molding resin molded products for semiconductor encapsulation, air oxidation on the mold surface can be suppressed as much as possible. It is possible to prevent the various additives from adhering to the mold surface and causing mold fouling as much as possible, and it is possible to significantly improve continuous moldability in molding semiconductors and heavy-duty resins.
Claims (1)
下及び／又は減圧下で樹脂の成形を行うことを特徴とす
る半導体封止用樹脂の成形方法。1. A method for molding a resin for semiconductor encapsulation, which comprises molding the resin under an inert gas atmosphere and/or under reduced pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4002087A JPS63208228A (en) | 1987-02-25 | 1987-02-25 | Formation of semiconductor sealing resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4002087A JPS63208228A (en) | 1987-02-25 | 1987-02-25 | Formation of semiconductor sealing resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63208228A true JPS63208228A (en) | 1988-08-29 |
Family
ID=12569221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4002087A Pending JPS63208228A (en) | 1987-02-25 | 1987-02-25 | Formation of semiconductor sealing resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63208228A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03281210A (en) * | 1990-03-29 | 1991-12-11 | Toowa Kk | Resin sealing and molding of electronic part |
| WO2008120286A1 (en) * | 2007-02-27 | 2008-10-09 | Fujitsu Microelectronics Limited | Semiconductor storage unit, process for manufacturing the same, and method of forming package resin |
-
1987
- 1987-02-25 JP JP4002087A patent/JPS63208228A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03281210A (en) * | 1990-03-29 | 1991-12-11 | Toowa Kk | Resin sealing and molding of electronic part |
| WO2008120286A1 (en) * | 2007-02-27 | 2008-10-09 | Fujitsu Microelectronics Limited | Semiconductor storage unit, process for manufacturing the same, and method of forming package resin |
| JP5163641B2 (en) * | 2007-02-27 | 2013-03-13 | 富士通セミコンダクター株式会社 | Semiconductor memory device, semiconductor memory device manufacturing method, and package resin forming method |
| US8582343B2 (en) | 2007-02-27 | 2013-11-12 | Fujitsu Semiconductor Limited | Semiconductor storage device, semiconductor storage device manufacturing method and package resin forming method |
| US8921125B2 (en) | 2007-02-27 | 2014-12-30 | Fujitsu Semiconductor Limited | Method of making ferroelectric memory device with barrier layer and novolac resin passivation layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6311780B2 (en) | ||
| CA2146400A1 (en) | Low expansion polymeric compositions | |
| JPS58198525A (en) | Epoxy resin composition | |
| JPS63208228A (en) | Formation of semiconductor sealing resin | |
| KR100715102B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
| JPH07309998A (en) | Mold surface release treatment resin composition, release treatment of surface of mold using the composition, production of thermosetting resin molded product using mold release-treated with the composition | |
| US3372214A (en) | Method of dielectrically heatmolding epoxy resins | |
| JP2633856B2 (en) | Resin-sealed semiconductor device | |
| JPH05299537A (en) | Epoxy resin composition | |
| JPH01242615A (en) | Epoxy resin composition for sealing semiconductor | |
| KR0158716B1 (en) | Epoxy resin composition for photo-semiconductor | |
| JP3353847B2 (en) | Resin sealing resin composition and resin sealing type semiconductor device | |
| JPH021149A (en) | Resin-sealed type semiconductor device | |
| JPH07118505A (en) | Epoxy resin composition | |
| KR100652830B1 (en) | Epoxy resin composition for packaging semiconductor device | |
| JPH0925330A (en) | Epoxy resin composition and semiconductor device sealed therewith | |
| KR20230044638A (en) | A potting material composition, a method of manufacturing a potting mold using the potting material composition, and a potting mold manufactured by the manufacturing method | |
| JPH01144441A (en) | Sealing resin composition | |
| JPH08295724A (en) | Epoxy resin composition and semiconductor device sealed therewith | |
| JPS60224234A (en) | Manufacture of semiconductor device | |
| JP3032067B2 (en) | Epoxy resin composition | |
| KR100798677B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same | |
| JPH05132609A (en) | Epoxy resin composition | |
| JPH062800B2 (en) | Epoxy resin composition for semiconductor encapsulation | |
| JPH03243616A (en) | Epoxy resin composition |