JPS60224234A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS60224234A JPS60224234A JP59080623A JP8062384A JPS60224234A JP S60224234 A JPS60224234 A JP S60224234A JP 59080623 A JP59080623 A JP 59080623A JP 8062384 A JP8062384 A JP 8062384A JP S60224234 A JPS60224234 A JP S60224234A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- tablet
- sealing
- voids
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000011347 resin Substances 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000003822 epoxy resin Substances 0.000 claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 18
- 239000012778 molding material Substances 0.000 claims abstract description 11
- 230000005484 gravity Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000001721 transfer moulding Methods 0.000 claims description 10
- 238000000465 moulding Methods 0.000 description 17
- 239000004593 Epoxy Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、エポキシ樹脂封止型半導体装置の製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing an epoxy resin-encapsulated semiconductor device.
近年、半導体装置の製造において低コスト化と生産性向
上をはかるため、基板上にダイボンディングされた半導
体素子、リードフレームなどがボンディングされてなる
半導体素子組立構体を封止するのに、エポキシ樹脂を用
いた樹脂封止が行われるようになってきている。この樹
脂封止の方法には注型方式、圧縮成形、射出成形、トラ
ンスファーモールド方式などがあるが、これらの中でも
量産性と作業性にすぐれたトランスファーモールド方式
が多用されている。In recent years, in order to reduce costs and improve productivity in the manufacture of semiconductor devices, epoxy resin has been used to seal semiconductor device assembly structures, which consist of semiconductor devices die-bonded on a substrate, lead frames, etc. Resin sealing is now being used. Methods for this resin sealing include casting, compression molding, injection molding, and transfer molding, but among these, the transfer molding method is often used due to its excellent mass productivity and workability.
しかし、このトランスファーモールド方式によりエポキ
シ樹脂封止された半導体装置では、封止樹脂にしばしば
内部気泡（以下、ボイドという）やフクレがみられ、こ
れらボイドやフクレが原因となって半導体装置の耐湿性
が低下したり外観不良が生じる場合があるという問題が
ある。However, in semiconductor devices encapsulated with epoxy resin using this transfer molding method, internal bubbles (hereinafter referred to as voids) and blisters are often observed in the encapsulating resin, and these voids and blisters can cause the moisture resistance of the semiconductor device to deteriorate. There are problems in that the quality may decrease or the appearance may be poor.
そこで、この発明者らは、トランスファーモールド方式
によりエポキシ樹脂封止された半導体装置における封止
樹脂にボイドやフクレが発生するのを防止することを目
的として検討した結果、この発明をなすに至った。Therefore, the inventors conducted studies aimed at preventing voids and blisters from occurring in the encapsulating resin in semiconductor devices encapsulated with epoxy resin using the transfer molding method, and as a result, they came up with this invention. .
すなわち、この発明は、半導体素子組立構体をトランス
ファーモールド方式でエポキシ樹脂封止して半導体装置
を製造するにあたり、上記の樹脂封止に用いる樹脂タブ
レットの比重をこのタブレットの成形材料の真比重の８
６％以上きなるように設定したことを特徴とする半導体
装置の製造方法に係るものである。That is, in manufacturing a semiconductor device by sealing a semiconductor element assembly structure with an epoxy resin using a transfer molding method, the present invention sets the specific gravity of the resin tablet used for the resin sealing to 8 of the true specific gravity of the molding material of the tablet.
The present invention relates to a method of manufacturing a semiconductor device, characterized in that the difference is set to be 6% or more.
なお、上記の成形材料の真比重とは、この成形材料の一
定量（重量）を加熱し溶融させたのち、完全硬化させ、
この硬化物の体積を測定し、上記の重量をこの体積で除
してめられるものである。In addition, the true specific gravity of the molding material mentioned above means that after heating and melting a certain amount (weight) of this molding material, it is completely cured.
This can be determined by measuring the volume of this cured product and dividing the above weight by this volume.
この発明の方法によれば、封止樹脂にボイドやフクレの
ほとんどないエポキシ樹脂封止型半導体装置を得ること
ができ、この半導体装置は封止樹脂におけるボイドやフ
クレに起因した耐水性の低下が起こらないため信頼性の
向上したものとなり、外観も良好である。According to the method of the present invention, it is possible to obtain an epoxy resin-encapsulated semiconductor device with almost no voids or blisters in the encapsulating resin, and this semiconductor device has no reduction in water resistance due to voids or blister in the encapsulating resin. Since this does not occur, the reliability is improved and the appearance is also good.
この発明の方法により上記の効果が得られるのは、樹脂
封止に用いる樹脂タブレットの比重をこのタブレットの
真比重の８６％以上となるように設定した、つまり樹脂
タブレットの充填度を８６％以上となるように設定した
ことにより、タブレット中に含まれる空気の量をボイド
やフクレの原因とならない程度まで減少させることがで
きたためと考えられる。The above effect can be obtained by the method of this invention because the specific gravity of the resin tablet used for resin sealing is set to be 86% or more of the true specific gravity of this tablet, that is, the filling degree of the resin tablet is set to 86% or more. This is thought to be due to the fact that the amount of air contained in the tablet was able to be reduced to an extent that did not cause voids or blisters.
この発明において使用する樹脂タブレット成形用の材料
は、従来公知のものがいずれも使用可能であり、一般に
エポキシ樹脂とその硬化剤を必須成分としこれに離型剤
、充てん剤などの各種添加剤を配合して通常５Ｂフリ一
パス程度の粉末としたものである。As the material for molding resin tablets used in this invention, any conventionally known materials can be used, and generally, epoxy resin and its curing agent are essential components, and various additives such as a mold release agent and a filler are added to this. It is usually blended to form a powder of about one pass of 5B.
上記エポキシ樹脂としては、クレゾール／ボラック型エ
ポキシ樹脂、フェノールノボラック型エポキシ樹脂、ビ
スフェノールＡ型エポキシ樹脂、ブロム化エポキシ樹脂
などが用いられ、硬化剤としてはフェノール樹脂、クレ
ゾールノボラック樹脂、芳香族アミン類、酸無水物など
が好ましく用いられる。各種添加剤の合計量は成形材料
全体の３０〜８５重量％の範囲とされているのがよい。As the above-mentioned epoxy resin, cresol/borac type epoxy resin, phenol novolac type epoxy resin, bisphenol A type epoxy resin, brominated epoxy resin, etc. are used, and as the curing agent, phenol resin, cresol novolac resin, aromatic amines, Acid anhydrides and the like are preferably used. The total amount of various additives is preferably in the range of 30 to 85% by weight of the entire molding material.
上記成形材料を用いて樹脂タブレットを成形する方法は
特に規定されず、一般の加圧成形法をそのまま採用でき
る。しかし、このときの成形条件としては、得られる樹
脂タブレットの充填度が前記の如くなるように、材料の
組成や粉末粒度などに応じて適宜設定しなければならな
い。たとえば成形圧としては従来のそれよりも高目とさ
れ、通常９００〜２，０００Ｋｇ／ｍ程度の範囲を選ぶ
のがよい。The method of molding a resin tablet using the above-mentioned molding material is not particularly specified, and a general pressure molding method can be used as is. However, the molding conditions at this time must be appropriately set according to the composition of the material, the powder particle size, etc. so that the degree of filling of the resin tablet obtained is as described above. For example, the molding pressure is higher than that of conventional molding pressures, and is usually in the range of about 900 to 2,000 kg/m.
このようにして成形される樹脂タブレットの形状は円柱
状、角柱状など各種形状であってよく、またその大きさ
も特に規定されず、トランスファーモールド方式で樹脂
封止する際に用いる成形機の種類に応じて決定すればよ
い。一般的な大きさとしては５〜１００Ｈ程度の範囲と
される。The shape of the resin tablet molded in this way may be various shapes such as cylindrical or prismatic, and its size is not particularly specified, and it depends on the type of molding machine used for resin sealing by transfer molding. You can decide accordingly. The general size is in the range of about 5 to 100H.
なお、樹脂タブレットの充填度が８６％未満では、得ら
れる半導体装置の封止樹脂にボイド、フクレが発生して
半導体装置の耐湿性を低下させたり外観不良が発生する
場合があるので不適当である。なお、従来エポキシ樹脂
封止に用いられていた樹脂タブレットの充填度は通常７
５〜８３％であり、このように充填度が低いため封止樹
脂にボイドやフクレが発生していたと考えられる。In addition, if the filling degree of the resin tablet is less than 86%, it is not suitable because voids and blisters may occur in the encapsulating resin of the obtained semiconductor device, which may reduce the moisture resistance of the semiconductor device or cause poor appearance. be. The filling degree of resin tablets conventionally used for epoxy resin sealing is usually 7.
It is 5 to 83%, and it is thought that voids and blisters were generated in the sealing resin due to such a low filling degree.
上記の樹脂タブレットを用いて半導体素子組立構体をト
ランスファーモールド方式でエポキシ樹脂封止すること
により、この発明に係る半導体装置が製造される。The semiconductor device according to the present invention is manufactured by sealing the semiconductor element assembly structure with epoxy resin using the above resin tablet using a transfer molding method.
上記の半導体素子組立構体としてはトランジスター、ダ
イオード、ＩＣ，ＬＳＩなどがあり、樹脂封止に用いる
成形機としては、一般にトランスファーモールド方式に
用いられるものが使用できる。なお、この成形機として
はマルチプランジャ一方式のものも含まれる。樹脂封止
の成形条件としては、成形機に応じて一般に行われてい
る成形条件でよい。The above-mentioned semiconductor element assembly structures include transistors, diodes, ICs, LSIs, etc., and the molding machine used for resin encapsulation can be one generally used for transfer molding. Note that this molding machine also includes a single-type multi-plunger type. The molding conditions for resin sealing may be those commonly used depending on the molding machine.
以下にこの発明の実施例を記載する。なお、以下におい
て部とあるのは重量部を示す。Examples of this invention will be described below. Note that in the following, parts indicate parts by weight.
実施例１〜３
半導体封止用エポキシ成形材料（真比重；１８、粒度；
４ｍｍフリーパス、組成；クレゾールノボラックエポキ
シ樹脂１５部、フェノールノボラック樹脂９部、溶融シ
リカ粉６９部、２−フェニルイミダゾール０．０２部、
カーボンブラック０，２部、ブロム化エポキシ樹脂４部
、シランカップリング剤０．５８部、カルナバワックス
０２部および三酸化アンチモン２部）６５ｆ！を用い、
第１表に示す成お形条件で同表に示す充填度の直径４
Ｃ）ｍｍ、高さ３０ｍｍの円柱形の樹脂タブレットを作
製した。Examples 1 to 3 Epoxy molding material for semiconductor encapsulation (true specific gravity: 18, particle size;
4mm free pass, composition: 15 parts of cresol novolac epoxy resin, 9 parts of phenol novolac resin, 69 parts of fused silica powder, 0.02 part of 2-phenylimidazole,
0.2 parts carbon black, 4 parts brominated epoxy resin, 0.58 parts silane coupling agent, 02 parts carnauba wax and 2 parts antimony trioxide) 65f! using
Diameter 4 with the filling degree shown in Table 1 under the forming conditions shown in Table 1
C) A cylindrical resin tablet with a diameter of 30 mm and a height of 30 mm was produced.
次にこの樹脂タブレットを高周波プリヒーターで８５°
Ｃに予熱してトランスファー成形機のポットに投入後、
２００個取りのＴＯ−９２型トランジスターをエポキシ
樹脂封止した。成形条件はトランスファー圧力フ０に９
／πｄ１金型温度１７５℃、成形時間２分で行った。こ
の成形後、成形品を１７５°Ｃで５時間ポストキュアー
して半導体装置を得た。Next, this resin tablet is heated to 85° with a high frequency preheater.
After preheating to C and putting it into the pot of the transfer molding machine,
200 TO-92 type transistors were sealed with epoxy resin. The molding conditions are transfer pressure 0 to 9.
/πd1 The mold temperature was 175°C and the molding time was 2 minutes. After this molding, the molded product was post-cured at 175°C for 5 hours to obtain a semiconductor device.
実施例４〜６
半導体封止用エポキシ成形材料（真比重；２１、粒度；
３ ｔｎｍフリーハス、組成；フェノールノボラック
エポキシ樹脂１２部、フェノールノボラック樹脂９部、
結晶性シリカ粉７３部、２−メチルイミダゾール０．０
２部、カーボンブラック０２部、ブロム化エポキシ樹脂
３部、シランカップリング剤０．５８部、ステアリン酸
０．２部および三酸化アンチモン２部）６５ｙを用い、
第２表に示す成形条件で同表に示す充填度の直径４０闘
、高さ２６ｍｍの円柱形の樹脂タブレットを作製した。Examples 4 to 6 Epoxy molding material for semiconductor encapsulation (true specific gravity: 21, particle size;
3 tnm free lotus, composition: 12 parts of phenol novolac epoxy resin, 9 parts of phenol novolac resin,
Crystalline silica powder 73 parts, 2-methylimidazole 0.0
2 parts of carbon black, 3 parts of brominated epoxy resin, 0.58 parts of silane coupling agent, 0.2 parts of stearic acid and 2 parts of antimony trioxide) 65y,
A cylindrical resin tablet with a diameter of 40 mm and a height of 26 mm was produced under the molding conditions shown in Table 2 and with the filling degree shown in the same table.
この樹脂タブレットを用いて実施例１〜３と同様にして
半導体装置を得た。Using this resin tablet, semiconductor devices were obtained in the same manner as in Examples 1 to 3.
比較例１，２
樹脂タブレットの成形条件を第１表に示す成形条件で同
表に示す充填度となるようにした以外は実施例１〜３と
同様にして半導体装置を得た。Comparative Examples 1 and 2 Semiconductor devices were obtained in the same manner as in Examples 1 to 3, except that the molding conditions for the resin tablets were as shown in Table 1 and the filling degree shown in the table was changed.
比較例３，４
樹脂タブレットの成形条件を第２表に示す成形条件で同
表に示す充填度となるようにした以外は実施例４〜６と
同様にして半導体装置を得た。Comparative Examples 3 and 4 Semiconductor devices were obtained in the same manner as in Examples 4 to 6, except that the molding conditions for the resin tablets were as shown in Table 2 to achieve the filling degree shown in the table.
上記の実施例および比較例で得られた半導体装置につい
て次のような試験を行った。The following tests were conducted on the semiconductor devices obtained in the above Examples and Comparative Examples.
〈外 観〉目視により封止樹脂表面にボイドやフクレの
認められないものを０１認められたものを×とした。<Appearance> Those with no voids or blisters observed on the surface of the sealing resin were rated 01, and those with no blisters observed were rated ×.
〈ボイド、フクレの量〉軟Ｘ線により封止樹脂全体にし
めるボイド、フクレの体積％をめた。<Amount of voids and blisters> The volume percentage of voids and blisters in the entire sealing resin was measured using soft X-rays.
〈耐湿性〉１４３℃、４気圧、１００％Ｒ１Ｈで所定時
間放置してプレッシャークツカーテストを行い半導体装
置１００個につき発生したオープン不良品の個数で示し
た。<Moisture Resistance> A pressure puller test was performed by leaving the product at 143° C., 4 atm, and 100% R1H for a predetermined period of time, and the number of open defective products generated per 100 semiconductor devices was shown.
上記の試験結果を第１表および第２表に示した。The above test results are shown in Tables 1 and 2.
なお、充填度（へ）は、各タブレットの比重と成形材料
の真比重とを測定して算出したものであり、上記タブレ
ットの比重は（タブレット重量）／（タブレット体積）
により、また上記成形材料の真比重はＪＩＳＫ６９１１
により測定した。The degree of filling is calculated by measuring the specific gravity of each tablet and the true specific gravity of the molding material, and the specific gravity of the above tablet is (tablet weight) / (tablet volume)
Accordingly, the true specific gravity of the above molding material is JISK6911
It was measured by
第 １ 表
第 ２ 表
上記の結果から明らかなように、この発明の半導体装置
の製造方法によると封止樹脂にボイドやフクレがほとん
ど発生しないため、耐湿性が良好で信頼性にすぐれると
ともに外観の良好な半導体装置を得ることができる。As is clear from the results shown in Table 1 and Table 2, the semiconductor device manufacturing method of the present invention causes almost no voids or blisters in the encapsulating resin, resulting in good moisture resistance, excellent reliability, and improved appearance. A semiconductor device with good quality can be obtained.
特許出願人 日東電気工業株式会社Patent applicant: Nitto Electric Industry Co., Ltd.
Claims (1)
式でエポキシ樹脂封止して半導体装置を製造するにあた
り、上記の樹脂封止に用いる樹脂タブレットの比重をこ
のタブレットの成形材料の真比重の８６％以上となるよ
うに設定したことを特徴とする半導体装置の製造方法。(1) When manufacturing a semiconductor device by sealing the semiconductor element assembly structure with epoxy resin using the transfer molding method, the specific gravity of the resin tablet used for the resin sealing is set to be 86% or more of the true specific gravity of the molding material of the tablet. 1. A method of manufacturing a semiconductor device, characterized in that the method is set so that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59080623A JPS60224234A (en) | 1984-04-21 | 1984-04-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59080623A JPS60224234A (en) | 1984-04-21 | 1984-04-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60224234A true JPS60224234A (en) | 1985-11-08 |
Family
ID=13723476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59080623A Pending JPS60224234A (en) | 1984-04-21 | 1984-04-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60224234A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6317924A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for magnetic head |
| US4741787A (en) * | 1985-08-28 | 1988-05-03 | Seiei Kohsan Co., Ltd. | Method and apparatus for packaging semiconductor device and the like |
| JP2020100824A (en) * | 2018-12-20 | 2020-07-02 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | Tableted epoxy resin composition for encapsulation of semiconductor devices, and semiconductor device encapsulated using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS597009A (en) * | 1982-07-03 | 1984-01-14 | Toshiba Corp | High-density tablet and method of sealing semiconductor with resin using said tablet |
| JPS597008A (en) * | 1982-07-03 | 1984-01-14 | Toshiba Corp | High-density tablet and method of sealing semiconductor with resin using said tablet |
-
1984
- 1984-04-21 JP JP59080623A patent/JPS60224234A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS597009A (en) * | 1982-07-03 | 1984-01-14 | Toshiba Corp | High-density tablet and method of sealing semiconductor with resin using said tablet |
| JPS597008A (en) * | 1982-07-03 | 1984-01-14 | Toshiba Corp | High-density tablet and method of sealing semiconductor with resin using said tablet |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4741787A (en) * | 1985-08-28 | 1988-05-03 | Seiei Kohsan Co., Ltd. | Method and apparatus for packaging semiconductor device and the like |
| JPS6317924A (en) * | 1986-07-09 | 1988-01-25 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for magnetic head |
| JP2020100824A (en) * | 2018-12-20 | 2020-07-02 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | Tableted epoxy resin composition for encapsulation of semiconductor devices, and semiconductor device encapsulated using the same |
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