JPS63201036A - Composition for substrate - Google Patents
Composition for substrateInfo
- Publication number
- JPS63201036A JPS63201036A JP62028121A JP2812187A JPS63201036A JP S63201036 A JPS63201036 A JP S63201036A JP 62028121 A JP62028121 A JP 62028121A JP 2812187 A JP2812187 A JP 2812187A JP S63201036 A JPS63201036 A JP S63201036A
- Authority
- JP
- Japan
- Prior art keywords
- glass powder
- sio2
- glass
- substrate
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 47
- 239000000919 ceramic Substances 0.000 claims abstract description 14
- 239000007800 oxidant agent Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims description 48
- 239000004020 conductor Substances 0.000 abstract description 13
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 5
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract description 2
- 239000006121 base glass Substances 0.000 abstract 4
- 238000001354 calcination Methods 0.000 abstract 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical group CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 239000004014 plasticizer Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野コ 本発明は、基板用組成物に関するものである。[Detailed description of the invention] [Industrial application fields] The present invention relates to a composition for a substrate.
［従来の技術］
ガラスセラミックのグリーンシート上に導電ペーストを
所定パターンに印刷し、これを複数枚重ねた後焼成し、
多層回路を形成する基板が知られている０層間の接続は
あらかじめグリーンシートにピアホールを形成し、導電
ペーストを印刷するか、又は導電性物質を詰め込むこと
により層間の導通をとる。かかる導電ペーストにＡｇ、
Ａｇ−ｐｄペースト、導電性物質にＡｇ。[Conventional technology] Conductive paste is printed in a predetermined pattern on a glass ceramic green sheet, multiple sheets are stacked, and then fired.
For the connection between layers of known substrates forming multilayer circuits, a peer hole is formed in the green sheet in advance, and conduction between the layers is achieved by printing a conductive paste or filling the green sheet with a conductive material. This conductive paste contains Ag,
Ag-pd paste, Ag as conductive material.
Ａｇ−ｐｄを使用した場合、焼成後基板の導体に近接部
位が黄色に変色し外観が損なわれるという問題点がある
。When Ag-PD is used, there is a problem that the portion of the substrate close to the conductor turns yellow after firing, impairing the appearance.
［発明の解決しようとする問題点］
本発明は従来技術が有していた上記問題点を解決し、焼
成後基板の導体に近接する部位が変色することのない基
板用組成物の提供を目的とする。[Problems to be Solved by the Invention] The purpose of the present invention is to solve the above-mentioned problems of the prior art, and to provide a composition for a substrate that does not cause discoloration of the portion of the substrate close to the conductor after firing. shall be.
［問題点を解決するための手段］
本発明は、無機成分がＳ １０２−Ａ Ｉ ２０３−Ｐ
ｂＯ系ガラス粉末又はＳｉＯ２−Ａ１２０３−Ｂ２０３
系ガラス粉末とセラミックス粉末とからなる組成物にお
いて、該無機成分に酸化剤を添加してなる基板用組成物
を提供するものである。[Means for solving the problems] The present invention provides that the inorganic component is S 102-A I 203-P
bO-based glass powder or SiO2-A1203-B203
The present invention provides a composition for a substrate comprising a glass powder and a ceramic powder, in which an oxidizing agent is added to the inorganic component.
本発明において添加する酸化剤は、空気雰囲気中で焼成
し、基板を形成する際、基板中に拡散したＡｇ” に対
して酸化作用を行うものであれば、特に限定されない。The oxidizing agent added in the present invention is not particularly limited as long as it has an oxidizing effect on Ag'' diffused into the substrate when the substrate is formed by firing in an air atmosphere.
中でも酸化作用、原料の入手しやすさからＴｉＯ２，Ｃ
ｅＯ２，ＢａＯ２，ＳｎＯ２が特に望ましい。かかる酸
化剤は単独でもよく、２種類以上併用してもよい。Among them, TiO2,C is used due to its oxidation effect and easy availability of raw materials.
Particularly preferred are eO2, BaO2, and SnO2. Such oxidizing agents may be used alone or in combination of two or more.
かかる酸化剤の添加量は、ガラス粉末及びセラミックス
粉末の総量である無機成分に対し、重量で０．０１〜５
％添加するのが好ましい。酸化剤の添加量が０．０１％
未満では添加による効果が少なく、又５％を超えると基
板の耐電圧特性が低下するので好ましくない。酸化剤の
添加量は上記範囲の中０．０５〜３％の範囲が特に望ま
しい。The amount of the oxidizing agent added is 0.01 to 5 by weight based on the total amount of inorganic components of glass powder and ceramic powder.
It is preferable to add %. The amount of oxidizing agent added is 0.01%
If it is less than 5%, the effect of addition will be small, and if it exceeds 5%, the withstand voltage characteristics of the substrate will deteriorate, which is not preferable. The amount of the oxidizing agent added is particularly preferably in the range of 0.05 to 3% within the above range.
酸化剤の粒径は、大き過ぎると焼結時の緻密性を悪くす
るので好ましくなく、小さ過ぎると取扱いがしにくくな
ることと入手し難いことの理由で好ましくない。 好ま
しい粒径は０．５〜５ル厘の範囲である。When the particle size of the oxidizing agent is too large, it is not preferable because it impairs the density during sintering, and when it is too small, it is not preferable because it becomes difficult to handle and difficult to obtain. Preferred particle sizes range from 0.5 to 5 liters.
本発明におけるＳｉＯ２−Ａｌ２Ｏ３−ＰｂＯ系ガラス
粉末としては次の組成のものが好ましい。The SiO2-Al2O3-PbO glass powder used in the present invention preferably has the following composition.
即ち、重量％表示で、
ＳｉＯ２３０〜５５
Ａ Ｉ２０３ １〜１５
ＰｂＯ ３０〜５５
Ｂ２Ｏ３ ０〜０．９
ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯｌ〜１５Ｚｎ０
０〜１Ｏ
Ｌｉ２０＋Ｎａ２Ｏ＋Ｋ２Ｏ ０〜５ＴｉＯ２
＋ＺｒＯ２０〜５
から実質的になるものである。この組成の限定理由は次
の通りである。That is, in weight percent, SiO230~55 A I203 1~15 PbO 30~55 B2O3 0~0.9 MgO+CaO+SrO+BaOl~15Zn0
0~1O Li20+Na2O+K2O 0~5TiO2
It consists essentially of +ZrO20-5. The reason for this composition limitation is as follows.
Ｓ ｉｏ２はガラスのネットワークフォーマ−であり、
少な過ぎると、軟化点が低くなり過ぎ耐熱性が低下し、
再焼成時に変形を生じ易くなるので好ましくない。一方
ＳｉＯ２が多過ぎると軟化点が高くなり過ぎセラミック
粉末を充分に濡らすことができず強度が低下するので好
ましくない、Ｓ＋０２は上記範囲中３０〜５０％の範囲
が特に好ましい。S io2 is a glass network former,
If it is too small, the softening point will become too low and the heat resistance will decrease.
This is not preferable since it tends to be deformed during re-firing. On the other hand, if SiO2 is too large, the softening point becomes too high and the ceramic powder cannot be sufficiently wetted, resulting in a decrease in strength, which is undesirable.S+02 is particularly preferably in the range of 30 to 50% of the above range.
Ａｌ２Ｏ３はガラスの溶解性あるいは、ガラス特性の耐
水性向上の面から必須であり、 １％より少ないとガラ
ス溶解時失透する恐れがあり、また１５％より多いとガ
ラス軟化温度が高くなり過ぎる。望ましくは２〜１３％
である。Al2O3 is essential from the viewpoint of improving the solubility of the glass or the water resistance of the glass properties.If it is less than 1%, there is a risk of devitrification during glass melting, and if it is more than 15%, the glass softening temperature will become too high. Desirably 2-13%
It is.
ＰｂＯはガラスのフラックス成分として用いる。３０％
より少ないとガラス軟化点が高くなり過ぎ、溶解困難と
なる。一方５５％より多いとガラスの熱膨張係数が大き
くなり過ぎＡｇ、 Ａｇ／Ｐｄ等の導体との接着性を低
下させる要因ともなり好ましくない。望ましくは３３〜
５０％である。PbO is used as a flux component for glass. 30%
If the amount is less, the glass softening point becomes too high, making it difficult to melt. On the other hand, if it is more than 55%, the coefficient of thermal expansion of the glass becomes too large, which causes a decrease in adhesiveness with conductors such as Ag and Ag/Pd, which is not preferable. Preferably 33~
It is 50%.
Ｂ２Ｏ３は必須成分ではないがＰｂＯと同様一部フラッ
クス成分として用いることができる。しかし、０．９％
より多いと耐薬品性、特に耐酸性が著しく低下するので
好ましくない。望ましくは０．８％未満である。Although B2O3 is not an essential component, it can be partially used as a flux component like PbO. However, 0.9%
If the amount is larger than this, chemical resistance, particularly acid resistance, will be significantly lowered, which is not preferable. It is preferably less than 0.8%.
ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯは、熱膨張係数調整の
目的およびガラス溶解性を向上させるために添加する。MgO+CaO+SrO+BaO is added for the purpose of adjusting the thermal expansion coefficient and improving glass meltability.
これら成分が１％より少ないと前記効果が少なく、１５
％より多いと溶解時失透しガラス化困難となる。望まし
くは２〜１３％である。If these components are less than 1%, the above effects will be small, and 15
If it exceeds %, it will devitrify during melting and become difficult to vitrify. It is preferably 2 to 13%.
ＺｎＯは必須ではないがＡｇ−Ｐｄ等の導体との適合性
あるいは溶解性改善の目的で１０％まで導入し得る。Although ZnO is not essential, up to 10% of ZnO may be introduced for the purpose of improving compatibility or solubility with conductors such as Ag-Pd.
Ｌ ｉ２０＋Ｎａ２Ｏ＋Ｋ２Ｏは必須ではないが添加す
ることによりセラミックス粉末との反応性およびガラス
溶解性の向上を図ることができるが、電気的特性、特に
絶縁抵抗特性においては好ましくない成分であるので必
要に応じて５％以下に留めるのが好ましく、望ましくは
３％以下である。Although L i20 + Na2O + K2O is not essential, it is possible to improve the reactivity with ceramic powder and the glass meltability by adding it, but it is an unfavorable component in terms of electrical properties, especially insulation resistance properties, so it may be added as necessary. It is preferable to keep it to 5% or less, preferably 3% or less.
ＺｒＯ２”ＴｉＯ２は必須ではないが、添加することに
よりガラス耐薬品性を向上させることができる。その量
は５％以下で充分で望ましくは３％以下である。ZrO2"TiO2 is not essential, but its addition can improve the chemical resistance of the glass. Its amount is sufficient at 5% or less, preferably 3% or less.
以上の成分の総量が８５％以上であれば実質的に特性が
変ることがなく残部５％未満については着色剤、耐水性
の向上の面からＳｎＯ２を含有することができる。一方
、ＳｉＯ２−Ａ１２０３−Ｂ２Ｃｈ系ガラス粉末として
は１次のｍ成からなるものが好ましい。即ち、重量％表
示で
ＳｉＯ２２５〜４０
Ａ １２０３ ４〜１５
Ｂ２Ｏ３ １５〜２５
ＢａＯ＋ＣａＯ＋Ｍｇｏ １５〜４０Ｚｎ０
１〜１０
ＺｒＱ２ ０．５〜５
の組成を実質的に有するものである。この組成の限定理
由は次の通りである。If the total amount of the above components is 85% or more, the properties will not substantially change, and the remaining less than 5% can contain a coloring agent and SnO2 from the viewpoint of improving water resistance. On the other hand, it is preferable that the SiO2-A1203-B2Ch glass powder has a first-order m configuration. That is, in weight%, SiO225-40 A 1203 4-15 B2O3 15-25 BaO+CaO+Mgo 15-40Zn0
It substantially has a composition of 1-10 ZrQ2 0.5-5. The reason for this composition limitation is as follows.
Ｓ ｉ０２が２５％より少ないと、軟化温度が低くなり
焼結時に大きな変形を生じ、４０％を超えると焼結温度
が高くなりすぎいずれも好ましくない、より望ましくは
２８〜３６％の範囲である。If S i02 is less than 25%, the softening temperature will be low and large deformation will occur during sintering, and if it exceeds 40%, the sintering temperature will be too high, both of which are unfavorable. More preferably, it is in the range of 28 to 36%. .
Ａｌ２Ｏ３は４％より少ないと、焼結体の耐湿性が劣り
、１５％を超えるとガラスの軟化温度が高くなり、焼結
温度が高くなり過ぎいずれも好ましくない。If Al2O3 is less than 4%, the moisture resistance of the sintered body will be poor, and if it exceeds 15%, the softening temperature of the glass will become high and the sintering temperature will become too high, both of which are unfavorable.
Ｂ２Ｏ３は、フラックスであり、１５％より少ないと焼
結温度が高くなり過ぎ、２５％を超えるとガラスの化学
的安定性が低下し好ましくない、より望ましくは、１６
〜２４％の範囲である。B2O3 is a flux, and if it is less than 15%, the sintering temperature will become too high, and if it exceeds 25%, the chemical stability of the glass will decrease, which is undesirable. More preferably, B2O3 is a flux.
It is in the range of ~24%.
ＢａＯ、Ｃ：ａＯ、ＭｇＯはガラス粉末製造時の溶解性
を向上さすため及びガラスの熱膨張係数を調整する目的
で添加する。これらの総量が１５％より少ないと上記溶
解性が充分に向上しないと共にガラス粉末製造時に失透
を生じ易く、４０％を超えると熱膨張係数が大きくなり
過ぎいずれも望ましくない。より好ましくは、１６〜３
９％の範囲である。BaO, C:aO, and MgO are added for the purpose of improving the solubility during glass powder production and adjusting the thermal expansion coefficient of the glass. If the total amount is less than 15%, the above-mentioned solubility will not be sufficiently improved and devitrification will easily occur during the production of glass powder, and if it exceeds 40%, the coefficient of thermal expansion will become too large, both of which are undesirable. More preferably 16-3
It is in the range of 9%.
ＺｎＯは、ガラスの溶解性を向上さすために１％以上添
加されるのが望ましい。一方１０％を超える添加はガラ
スの軟化温度が低くなり過ぎ焼結時に大きな変形を生じ
易くいずれも好ましくない。より望ましい範囲は２〜９
％である。ZnO is desirably added in an amount of 1% or more in order to improve the solubility of the glass. On the other hand, addition of more than 10% is not preferable because the softening temperature of the glass becomes too low and large deformation tends to occur during sintering. The more desirable range is 2-9.
%.
Ｚ ｒ０２は、ガラスの化学的安定性を向上さすために
０．５％以上添加されるのが望ましいが、５５％を超え
る添加は、ガラス粉末製造時の溶解性を悪くするので望
ましくない。より好ましい範囲は、 １〜４％である。Zr02 is desirably added in an amount of 0.5% or more in order to improve the chemical stability of the glass, but addition of more than 55% is undesirable because it impairs the solubility during the production of glass powder. A more preferable range is 1 to 4%.
本発明のガラス粉末はかかる成分で、９５％以上構成す
るのが望ましく、残部５％未満については、着色剤、耐
水性の向上を図るためのＳｎＯ２を添加することができ
る。It is desirable that the glass powder of the present invention is composed of 95% or more of such components, and the remaining less than 5% may contain a coloring agent and SnO2 for improving water resistance.
上記組成のＳｉＯ２−Ａｌ２Ｏ３−ＰｂＯ系ガラス粉末
及びＳｉＯ２−Ａ１２Ｃｈ−Ｂ２Ｏ３系ガラス粉末は誘
電率が低く１曲げ強度に優れた基板を得ることができる
。The SiO2-Al2O3-PbO glass powder and the SiO2-A12Ch-B2O3 glass powder having the above compositions have a low dielectric constant and can provide a substrate with excellent bending strength.
セラミック粉末としては、ガラスとなじみ易く、緻密な
基板が得られ、かつ入手が容易であるのでアルミナ、ジ
ルコン、コージェライトが好ましい。これらのセラミッ
クス粉末は単独で使用し又は併用することができる。As the ceramic powder, alumina, zircon, and cordierite are preferred because they are compatible with glass, provide a dense substrate, and are easily available. These ceramic powders can be used alone or in combination.
ガラス粉末とセラミックス粉末との混合割合は、ＳｉＯ
２−Ａｌ２Ｏ３−ＰｂＯ系ガラスの場合、ガラス粉末３
０〜７０重量％とセラミックス粉末３０〜７０重量％と
になるようにすることが望ましい。The mixing ratio of glass powder and ceramic powder is SiO
In the case of 2-Al2O3-PbO glass, glass powder 3
It is desirable that the content of the powder be 0 to 70% by weight and the ceramic powder be 30 to 70% by weight.
ガラス粉末の含有量は３０重量％より少ないと緻密、焼
結層ができず電気特性が低下し好ましくない、一方７０
重量％を超えると、焼結体の曲げ強度が低下し好ましく
ない、ガラス粉末は上記範囲中３５〜６５重量％の範囲
がより望ましい。If the content of glass powder is less than 30% by weight, a dense and sintered layer will not be formed and the electrical properties will deteriorate, which is undesirable.
If it exceeds 35% by weight, the bending strength of the sintered body decreases, which is not preferable.The content of the glass powder is preferably 35 to 65% by weight within the above range.
またＳｉＯ２−Ａｌ２Ｏ２−Ｂ２Ｏ系ガラスの場合、ガ
ラス粉末３５〜９５重量％、セラミックス粉末５〜Ｂ５
重量％の割合になるゆにすることが好ましい、ガラス粉
末の含有量が上記範囲より少ないと緻密な焼結体が得ら
れ難く、上記範囲より多くなると曲げ強度が低下するの
でいずれも好ましくない、ガラス粉末の含有量は上記範
囲中４０〜９０重量％の範囲がより望ましい。In addition, in the case of SiO2-Al2O2-B2O glass, glass powder 35 to 95% by weight, ceramic powder 5 to B5
It is preferable to leave the glass powder at a ratio of % by weight.If the content of the glass powder is less than the above range, it is difficult to obtain a dense sintered body, and if it exceeds the above range, the bending strength will decrease, so both are not preferable. The content of glass powder is more preferably in the range of 40 to 90% by weight within the above range.
本発明の組成物は、各粉末が上記割合にて混合されてい
るものであるが、それを使用した多層回路基板は例えば
次の様にして製造される。The composition of the present invention is one in which each powder is mixed in the above proportions, and a multilayer circuit board using the composition is manufactured, for example, in the following manner.
本発明の組成物に有機バインダー、可塑剤、溶剤を添加
し、混練してスラリーを作成する。An organic binder, a plasticizer, and a solvent are added to the composition of the present invention and kneaded to prepare a slurry.
この有機バインダーとしては、ブチラール樹脂、アクリ
ル樹脂、可塑剤としては、フタル酸ジブチル、フタル酸
ジオクチル、フタル酸ブチルベンジル、溶剤としては、
トルエン、アルコール等いずれも常用されているものが
使用できる。The organic binder is butyral resin, acrylic resin, the plasticizer is dibutyl phthalate, dioctyl phthalate, butylbenzyl phthalate, and the solvent is:
Commonly used toluene, alcohol, etc. can be used.
次いでこのスラリーをシートに成形し、乾燥することに
より、未焼結のシート、いわゆるグリーンシートが作成
される。次いでこのグリーンシートにピアホール用の穴
を開け、片面にＡｇ又はＡｇ−ｐｄペーストを所定の回
路に厚膜印刷する。Next, this slurry is formed into a sheet and dried to create an unsintered sheet, a so-called green sheet. Next, holes for peer holes are made in this green sheet, and a thick film of Ag or Ag-PD paste is printed on one side to form a predetermined circuit.
この時、ピアホールにはＡｇ又はＡｇ−Ｐｄペーストが
満たされる０次にこれらの印刷グリーンシートを所定の
枚数重ね合わせた熱圧着により積層化し、焼成し、グリ
ーンシート及び回路を焼結する。かくして製造されたも
のは回路が絶縁基板を介して多層に、積層されたものと
なる。At this time, the pier holes are filled with Ag or Ag-Pd paste, and a predetermined number of these printed green sheets are laminated by thermocompression bonding and fired to sinter the green sheets and the circuit. The product manufactured in this manner has circuits laminated in multiple layers via insulating substrates.
［実施例］
表１．２に示した組成のガラスになるように調合し、白
金坩堝に入れ、１４００〜１５００℃で３〜４時間、加
熱攪拌溶解した。溶解後水砕又はフレーク状とし、同表
■に示す組成のガラス粉末を製造した０次いでこのガラ
ス粉末とセラミックス粉末と酸化剤とが重量％で同表■
に示す割合になるよう秤量し、ボールミルで粉砕混合し
て本発明によっる種類の組成物を得た。[Example] A glass having the composition shown in Table 1.2 was prepared, placed in a platinum crucible, and melted with stirring at 1400 to 1500°C for 3 to 4 hours. After melting, it was pulverized or flaked to produce a glass powder having the composition shown in the same table (■).Then, this glass powder, ceramic powder, and oxidizing agent were added in weight percent to the same table (■).
The compositions of the type according to the present invention were obtained by weighing and mixing in a ball mill to obtain a composition of the type according to the present invention.
次いでこれらに有機バインダーとしてメチルメタクリレ
ート樹脂、可塑剤としてフタル酸ジブチル並びに溶剤と
してトルエンを添加し、混練してから粘度１００００〜
３０００ｃｐｓのスラリーを作成した。次いでこのスラ
リーを約０．２ｍｍ厚のシートにした後、７０℃で約２
時間乾燥した０次いでこのシートにＡｇ導体ペースト（
デュポン社製塀８５００）又はＡｇ−Ｐｄ導体ペースト
（ＥＳＬ社製１９８０１）をスクリーン印刷により印刷
する。Next, methyl methacrylate resin as an organic binder, dibutyl phthalate as a plasticizer, and toluene as a solvent are added to these, and after kneading, the viscosity is 10,000~
A slurry of 3000 cps was created. Next, this slurry was made into a sheet with a thickness of about 0.2 mm, and then heated at 70°C for about 2 mm.
This sheet was dried for an hour and then the Ag conductor paste (
DuPont Fence 8500) or Ag-Pd conductor paste (ESL 19801) is printed by screen printing.
次いでこのシートを空気雰囲気中で９００℃１時間焼成
し、焼結基板を製造した。この焼結基板について、絶縁
抵抗、誘電率、誘電正接熱膨張率、曲げ強度、基板の導
体に近接した部位の変色を測定し、その結果を同表の■
に併記した。Next, this sheet was fired at 900° C. for 1 hour in an air atmosphere to produce a sintered substrate. For this sintered board, we measured the insulation resistance, dielectric constant, dielectric loss tangent thermal expansion coefficient, bending strength, and discoloration of the part of the board close to the conductor, and reported the results in
Also listed.
比較例として本発明以外の組成物により製造した基板に
ついて同様の測定を行いその結果も同表に併記した。As a comparative example, similar measurements were performed on substrates manufactured using compositions other than those of the present invention, and the results are also listed in the same table.
同表から明らかなように、本発明による組成物は焼結に
より導体に近接した部位に変色を生ずることがなく電気
特性、熱膨張率及び曲げ強度に優れ、基板として充分使
用できる特性を有する。As is clear from the table, the composition according to the present invention does not cause discoloration in areas close to the conductor due to sintering, has excellent electrical properties, thermal expansion coefficient, and bending strength, and has characteristics that can be used satisfactorily as a substrate.
［発明の効果］
本発明の組成物によれば、焼成によりＡｇ又はＡＧ−Ｐ
ｄ導体に近接した部位が黄色に変色し外観を損なうこと
はない。更に°、上述した組成のＳｉＯ２−Ａｌ２Ｏ２
−ＰｂＯ系ガラス粉末又はＳ Ｉ０２−Ａ Ｉ２０３−
Ｂ２Ｏ３系ガラス粉末を使用すれば、電気特性、膨張率
、曲げ強度にも優れた基板を製造することができる。[Effect of the invention] According to the composition of the invention, Ag or AG-P can be
The area close to the d conductor will not turn yellow and spoil its appearance. Further °, SiO2-Al2O2 of the above-mentioned composition
-PbO glass powder or S I02-A I203-
By using B2O3-based glass powder, it is possible to manufacture a substrate with excellent electrical properties, expansion coefficient, and bending strength.
Claims (5)
系ガラス粉末又はＳｉＯ＿２−Ａｌ＿２Ｏ＿３−Ｂ＿２
Ｏ＿３系ガラス粉末とセラミックス粉末とからなる組成
物において、該無機成分に酸化剤を添加してなる基板用
組成物。(1) Inorganic component is SiO_2-Al_2O_3-PbO
glass powder or SiO_2-Al_2O_3-B_2
A composition for a substrate comprising an O_3 glass powder and a ceramic powder, and an oxidizing agent added to the inorganic component.
量％添加されている特許請求の範囲第１項記載の組成物
。(2) The composition according to claim 1, wherein the oxidizing agent is added in an amount of 0.01 to 5% by weight based on the inorganic component.
２及びＳｎＯ＿２から選ばれた少なくとも１種である特
許請求の範囲第１項又は第２項記載の組成物。(3) The oxidizing agents are TiO_2, CeO_2, BaO_
The composition according to claim 1 or 2, which is at least one selected from SnO_2 and SnO_2.
２３０〜５５ Ａｌ＿２Ｏ＿３１〜１５ ＰｂＯ３０〜５５ ＭｇＯ＋ＣａＯ＋ＳｒＯ＋ＢａＯ１〜１５ ＺｎＯ０〜１０ Ｂ＿２Ｏ＿３０〜０．９ Ｌｉ＿２Ｏ＋Ｎａ＿２Ｏ＋Ｋ＿２Ｏ０〜５ ＴｉＯ＿２＋ＺｒＯ＿２０〜５ からなる特許請求の範囲第３項記載の組成 物。(4) The glass powder is substantially SiO_ in weight percent.
230-55 AL_2O_31 ~ 15 PBO30-55 MGO + CAO + SRO + BAO1-15 Zno 00 ~ 15 Zno 00 ~ 10 B_2O_30-0.9 LI_2O + NA_2O + K_2O00 ~ 5 TIO_2 + ZRO_20-5 The composition according to the range 3.
２３０〜５５ Ａｌ＿２Ｏ＿３１〜１５ Ｂ＿２Ｏ＿３１５〜２５ ＢａＯ＋ＣａＯ＋ＭｇＯ１５〜４０ ＺｎＯ１〜１０ ＺｒＯ＿２０．５〜５ からなる特許請求の範囲第３項記載の組成 物。(5) The glass powder is substantially SiO_ in weight percent.
230-55 Al_2O_31-15 B_2O_315-25 BaO+CaO+MgO15-40 ZnO1-10 ZrO_20.5-5 The composition according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028121A JPS63201036A (en) | 1987-02-12 | 1987-02-12 | Composition for substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028121A JPS63201036A (en) | 1987-02-12 | 1987-02-12 | Composition for substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63201036A true JPS63201036A (en) | 1988-08-19 |
Family
ID=12239967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62028121A Pending JPS63201036A (en) | 1987-02-12 | 1987-02-12 | Composition for substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63201036A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04228449A (en) * | 1990-05-16 | 1992-08-18 | Corning Inc | Multichannel plate and glass |
| JP2000351649A (en) * | 1999-06-08 | 2000-12-19 | Asahi Glass Co Ltd | Glass for substrate and glass substrate |
| JP2001196503A (en) * | 1999-10-29 | 2001-07-19 | Kyocera Corp | Sintered glass ceramic, manufacturing method therefor, wiring board and its mounting structure |
| JP2010531287A (en) * | 2007-11-01 | 2010-09-24 | コリア インスティテュート オブ サイエンス アンド テクノロジー | Dielectric ceramic composition for low temperature firing having high strength and high Q value |
-
1987
- 1987-02-12 JP JP62028121A patent/JPS63201036A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04228449A (en) * | 1990-05-16 | 1992-08-18 | Corning Inc | Multichannel plate and glass |
| JP2000351649A (en) * | 1999-06-08 | 2000-12-19 | Asahi Glass Co Ltd | Glass for substrate and glass substrate |
| JP2001196503A (en) * | 1999-10-29 | 2001-07-19 | Kyocera Corp | Sintered glass ceramic, manufacturing method therefor, wiring board and its mounting structure |
| JP4497627B2 (en) * | 1999-10-29 | 2010-07-07 | 京セラ株式会社 | Glass ceramic sintered body, method for producing the same, wiring board, and mounting structure thereof |
| JP2010531287A (en) * | 2007-11-01 | 2010-09-24 | コリア インスティテュート オブ サイエンス アンド テクノロジー | Dielectric ceramic composition for low temperature firing having high strength and high Q value |
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