JPS6319266A - Charging apparatus - Google Patents
Charging apparatusInfo
- Publication number
- JPS6319266A JPS6319266A JP16207786A JP16207786A JPS6319266A JP S6319266 A JPS6319266 A JP S6319266A JP 16207786 A JP16207786 A JP 16207786A JP 16207786 A JP16207786 A JP 16207786A JP S6319266 A JPS6319266 A JP S6319266A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electron beam
- electrode
- charging device
- beam sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 abstract description 2
- 230000001133 acceleration Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
- G03G15/32—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head
- G03G15/321—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image
- G03G15/323—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image by modulating charged particles through holes or a slit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、帯電装置、特に、固体電子線発生装置を用い
た帯電装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a charging device, and particularly to a charging device using a solid-state electron beam generator.
従来、この稲の固体電子線発生装置は、例えば、特公昭
５４−３０２７４号公報、特開昭５４−１１１２７２号
公報（米国特許第４゜２５９．６７８号明細書）、特開
昭５６−１５５２９号公報（米国特許第４．３０３，９
３０号明細書）、あるいは、特開昭５７−３８５２８号
公報等に開示されている。Conventionally, this solid-state electron beam generator for rice has been disclosed, for example, in Japanese Patent Publication No. 54-30274, Japanese Patent Application Laid-Open No. 111272-1982 (U.S. Patent No. 4゜259.678), and Japanese Patent Application Laid-Open No. 15529-1982. Publication (U.S. Patent No. 4.303,9
30) or Japanese Patent Application Laid-Open No. 57-38528.
〔発明が解決しようとする問題点）
以上のような従来のこの種の装置においては、放電を用
いた素子（例えば、米国特許第４゜１５５．０９３号明
細書など）が知られているが、これら素子は、制御電圧
が高い、スパッタリングにより表面素子が破壊される。[Problems to be Solved by the Invention] In the conventional devices of this kind as described above, elements using discharge (for example, U.S. Pat. No. 4,155,093) are known. In these devices, the control voltage is high, and the surface devices are destroyed by sputtering.
あるいは、帯電面の線密度に限界がある等、種々の欠点
があり、広く普及するに至っていない。In addition, it has various drawbacks such as a limit to the linear density of the charging surface, so it has not become widely used.
本発明は、以上のような局面にかんがみて、従来にはな
かった全く新しい機能を備えた帯電装置を提供すること
により、超高精密な帯電パターンが得られると共に、要
すれば、各ドツト毎に帯電量をルＪ御することもできる
ようにすることを目的としている。In view of the above-mentioned circumstances, the present invention provides a charging device equipped with a completely new function not previously available, thereby making it possible to obtain an ultra-high precision charging pattern and, if necessary, to The purpose of this invention is to make it possible to control the amount of charge.
このため、本発明においては、複数個の固体電子線源を
配設した基板に対向して所定間隔で薄板。For this reason, in the present invention, thin plates are arranged at predetermined intervals facing a substrate on which a plurality of solid-state electron beam sources are arranged.
を配設し、かつ両板間の空間が実質的に真空となるよう
に封止した帯電装置の、上記薄板の一部を電子透過性部
材で構成し、かつ、薄板上には電極を設けて前記電子線
源との間に所定電圧を印加し、流出した電子を加速して
帯電装置外に出力させるよう構成することにより、前記
目的を達成しようとするものである。of the charging device, in which a part of the thin plate is made of an electron-transparent member, and an electrode is provided on the thin plate, and the charging device is sealed so that the space between the two plates is substantially vacuum. This object is achieved by applying a predetermined voltage between the electron beam source and the electron beam source, accelerating the outflowing electrons, and outputting them to the outside of the charging device.
（作用）
以上のような構成によって、高密度の固体電子線源によ
る帯電装置が形成され、従来にない超高精細な帯電パタ
ーンを形成することができ、また、要すれば、それぞれ
の電子線源を独立に制御することにより、ドツト毎の帯
電量を選択的に制御することができる。(Function) With the above configuration, a charging device using a high-density solid-state electron beam source is formed, and an unprecedented ultra-high-definition charging pattern can be formed. By controlling the sources independently, the amount of charge on each dot can be selectively controlled.
（実施例〕 以下に、本発明を実施例に基づいて説明する。(Example〕 The present invention will be explained below based on examples.
第１〜３図は、本発明原理による一実施例の説明図で、
第１図は、帯電装置の平面図、第２図および第３図は、
それぞれ第１図のｘ−Ｘ線およびＹ−Ｙ線断面矢視図で
ある。1 to 3 are explanatory diagrams of an embodiment according to the principles of the present invention,
Figure 1 is a plan view of the charging device, Figures 2 and 3 are
2A and 2B are cross-sectional views taken along line XX and YY in FIG. 1, respectively;
（構成）
ＳＵは、複数の固体電子線［ＥＢｌ、ＥＢ２゜ＥＢ３．
−・・・・・用の本体である基板で、本実施例において
は、ｎ形のシリコン基板を用いている。(Structure) SU consists of a plurality of solid-state electron beams [EBl, EB2°EB3.
-... In this embodiment, an n-type silicon substrate is used.
ＥＸｌ、ＥＸ２．ＥＸ３． ・−・−は、Ｘ方向の選択
を行う各Ｘ電極であり、これらＥＸｌ、ＥＸ２゜ＥＸ３
．・・・・・・は、それぞれ、接点領域を介して、高ド
ープｎ影領域ＨＤ １．ＨＤ２．ＨＤ３．−−−−−−
と接続されている。また、ＥＹはＹ方向のＹ電極で、各
電極と同様に、接点領域を介して、高ドープｐ形通路ｐ
ｐと接続されており、各Ｘ電極ＥＸ１．ＥＸ２．ＥＸ３
． ・−−−−−とＹ電極ＥＹとにより、マトリックス
を構成している。EXl, EX2. EX3.・-・- are each X electrode that selects the X direction, and these EXl, EX2°EX3
．． . . . are respectively connected to the highly doped n shadow region HD 1 through the contact region. HD2. HD3. --------
is connected to. In addition, EY is a Y electrode in the Y direction, and similarly to each electrode, a highly doped p-type path p
p, and each X electrode EX1. EX2. EX3
．． ---- and the Y electrode EY constitute a matrix.
基板ＳＵ上には、絶縁層ＩＬを介して、引出し電極ＰＥ
が設けられ、各電子線源ＥＢ１゜ＥＢ２．ＥＢ３．・・
・・・・を形成している。また、基板ＳＵと相対向して
所定の厚みを有するスペーサを介して、薄板である表面
板ＦＰが配設され、表面板ＦＰ上には、引出し電極ＰＥ
に対応する位置に、加速電極ＡＥ、６−配設されると共
に、各電子線源ＥＢＩ、ＥＢＢ、ＥＢ３．・・・・・・
に対応する部位には、例えば、Ｎｉ等の金属薄膜やＢＮ
。On the substrate SU, an extraction electrode PE is provided via an insulating layer IL.
are provided, and each electron beam source EB1°EB2 . EB3.・・・
It forms... Further, a thin surface plate FP is disposed opposite to the substrate SU with a spacer having a predetermined thickness interposed therebetween, and on the surface plate FP, an extraction electrode PE is disposed.
Accelerating electrodes AE, 6- are arranged at positions corresponding to the respective electron beam sources EBI, EBB, EB3.・・・・・・
For example, a metal thin film such as Ni or BN
.
ＳｉＣフィルム等の電子透過性の部材が用いられて、い
わゆる“電子窓”を形成している。また、表面板ＦＰに
、Ａ１等の金属薄膜を用いることにより、加速電極ＡＥ
と電子窓とを兼ねる方法もある。An electron transparent member such as a SiC film is used to form a so-called "electronic window." In addition, by using a metal thin film such as A1 for the surface plate FP, the accelerating electrode AE
There is also a method that doubles as an electronic window.
基板ＳＵと表面板ＦＰ間の空間は、電子を所望のエネル
ギーに加速するために、真空とする必要があるが、通常
は１０−Ｓ〜１０−９Ｔｏｒｒ程度の圧力か望ましい。The space between the substrate SU and the surface plate FP needs to be in a vacuum in order to accelerate electrons to a desired energy, but it is usually desirable to have a pressure of about 10<->S to 10<-9> Torr.
このような圧力を維持し得るように、基板ＳＵと表面板
ＦＰとを気密封止する。The substrate SU and the front plate FP are hermetically sealed so that such pressure can be maintained.
（動作）
以上のような構成において、各Ｘ電ＪｉＥＸ１゜ＥＸ２
．ＥＸ３．−−−−−−とＹ電極ＥＹとに、電子なだれ
増倍作用（アバランシェ・マルチブリケーション）がｐ
−ｎ接合部で生ずるような電圧を印加し、同時に、引出
し電極ＰＥに、ある大きさの電圧を与えることにより、
各電子線源ＥＢＩ。(Operation) In the above configuration, each X electric JiEX1゜EX2
．． EX3. ------- and the Y electrode EY, the electron avalanche multiplication effect (avalanche multiplication) is p
- By applying a voltage such as that occurring at the n junction and at the same time applying a certain voltage to the extraction electrode PE,
Each electron beam source EBI.
ＥＢ２．ＥＢ３．−＝−・・より電子ｅ−（第２図）が
流出する。EB2. EB3. Electrons e- (Fig. 2) flow out from -=-....
コノとき、各Ｘ電極ＥＸ１．ＥＸ２．ＥＸ３゜・・・・
・・を適当に選択することにより、任意の各電子線源Ｅ
ＢＩ、ＥＢ２．ＥＢ３．−・・・・・より電子を取出す
ことができる。これら電子流出のメカニズムについては
、例えば、米国特許第４，２５９゜６７８号明細書等に
詳述されているので、説明は省略する。At this time, each X electrode EX1. EX2. EX3゜・・・・
By appropriately selecting..., each arbitrary electron beam source E
BI, EB2. EB3. - Electrons can be extracted from... The mechanisms of these electron outflows are detailed in, for example, US Pat. No. 4,259.678, so their explanation will be omitted.
加速電極ＡＥに所定値の電圧を印加しておくことにより
、各電子線源ＥＢ１．ＥＢ２．ＥＢ３゜・・・・・・よ
り流出した電子は、所望のエネルギーまで加速され、表
面板ＦＰの電子窓を透過する。例えば、電子窓として、
厚さ１ｍｍのＳｉＣを使用した場合、加速電極ＡＥに２
５ｋｖを印加することによリ、９０％の電子を帯電装置
の外に取出すことができる。By applying a predetermined voltage to the accelerating electrode AE, each electron beam source EB1. EB2. Electrons flowing out from EB3° are accelerated to a desired energy and transmitted through the electron window of the front plate FP. For example, as an electronic window,
When using SiC with a thickness of 1 mm, the accelerating electrode AE has 2
By applying 5 kV, 90% of the electrons can be taken out of the charging device.
（応用例）
第４図に、上記実施例帯電装置を、例えば静電記録装置
の誘電体ドラムＤＲに応用した要部斜視図を示す。本実
施例の帯電装置の表面板ＦＰのＸ方向を、ＴＡｍ体（感
光体） Ｆ ラムＤ Ｒト＠、１！ｉ＋方向に平行に対
向して配設することにより、ドラムＤＲ上に、選択的に
電荷ドツトＳＣを付することができる。本実施例におい
ては、ピッチ５μｌでＸ方向−次元に各電子線＃ｉＥＢ
が配設された素子を用いて、はぼ、ピッチ５μｍの超高
問細な帯電パターンを誘電体ドラムＤＲ上に形成し得、
このため、超高間密記録および極めて優れた階調のハー
ドコピー記録が得られることが実証されている。(Application Example) FIG. 4 is a perspective view of a main part in which the charging device of the above embodiment is applied to, for example, a dielectric drum DR of an electrostatic recording device. The X direction of the surface plate FP of the charging device of this embodiment is the TAm body (photoreceptor) F RAM D R @, 1! By arranging them parallel to each other in the i+ direction, charge dots SC can be selectively applied to the drum DR. In this example, each electron beam #iEB is
An ultra-fine charging pattern with a pitch of 5 μm can be formed on the dielectric drum DR using an element in which
Therefore, it has been demonstrated that ultra-high density recording and hard copy recording with extremely excellent gradation can be obtained.
（他の実施例）
前記実施例においては、電子線源ＥＢとして、ｐ−ｎ接
合の電子なだれ増倍作用を利用する形式の素子を用いた
が、本発明ｙｌ理においては、電子流出機構自体は本質
的なものではなく、したがって、電子線源として、他の
公知のｐ−ｎ接合の負仕事関数（ネガティブ・ワーク・
ファンクション）を用いたものや電界放出（フィールド
・エミッシヨン）形等の固体電子線源を用いても、同社
の効果が得られる。(Other Embodiments) In the above embodiments, an element that utilizes the electron avalanche multiplication effect of a p-n junction was used as the electron beam source EB, but in the theory of the present invention, the electron outflow mechanism itself is not essential, and therefore the negative work function of other known p-n junctions can be used as an electron beam source.
The company's effects can also be obtained using solid-state electron beam sources such as those using a function) or field emission type.
また、前記実施例においては、各電子線源ＥＢ １．Ｅ
ＢＢ、ＥＢ３．−−−−−・が、Ｘ方向に一次元アレイ
状に配設された場合について説明したが、これら各電子
線源を独立に制御することにより、また、２次元的に配
設された電子線源をブロック分割し、ブロック単位で独
立して制御することにより、帯電パターンの各ドツト毎
の帯電量を選択的にルリ御することができる。Further, in the embodiment, each electron beam source EB1. E
BB, EB3. Although we have explained the case where the electron beam sources are arranged in a one-dimensional array in the X direction, by controlling each of these electron beam sources independently, it is also possible to By dividing the radiation source into blocks and controlling each block independently, the amount of charge for each dot in the charging pattern can be selectively controlled.
以上、説明してきたように、本発明によれば、高密度の
固体電子線源を用いて帯電装置を構成するようにしたた
め、従来では得られなかフた超高結納な帯電パターンを
形成することが可能となり、また、要すれば、それぞれ
の帯電量を選択的に制御することも可能となった。As described above, according to the present invention, since the charging device is configured using a high-density solid-state electron beam source, it is possible to form a charging pattern with an ultra-high concentration that could not be obtained with the conventional methods. It has also become possible to selectively control the amount of each charge, if necessary.
第１図は、本発明に係る帯電装置の一実施例の平面図、
第２図および第３図は、それぞれ第１図のＸ−Ｘ線およ
びＹ−Ｙ線断面矢視図、第４図は、本実施例の応用例要
部斜視図である。
ＳＵ：基板
ＥＢＩ、ＥＢ２．ＥＢ３．−・・・・・：電子線源Ｆ２
２表面板（薄板）
ＡＥ：加速電極
本金町１：Ｊる弔電装置の一賞た例の千面図第１図
蔦１［２１のＸ−Ｘ繊Ｉ！１′１山矢視、因第２図FIG. 1 is a plan view of an embodiment of a charging device according to the present invention;
2 and 3 are cross-sectional views taken along lines X-X and Y-Y in FIG. 1, respectively, and FIG. 4 is a perspective view of a main part of an application example of the present embodiment. SU: Substrate EBI, EB2. EB3. -...: Electron beam source F2
2 Surface plate (thin plate) AE: Accelerating electrode Honkanemachi 1: A thousand-faced drawing of an example of a prized condolence device. 1'1 Mountain arrow view, Figure 2
Claims (2)
対向して、所定間隔で薄板を設け、かつ、該薄板と前記
基板との間の空間が実質的に真空となるように封止され
た帯電装置であって、前記薄板の一部を電子透過性部材
により構成すると共に、該薄板上に電極を配設し、前記
電子線源と該電極間に所定値の電圧を印加し、該電子線
源より流出した電子を加速して前記帯電装置外に取出す
よう構成したことを特徴とする帯電装置。(1) A thin plate is provided at a predetermined interval to face a substrate on which a plurality of solid-state electron beam sources are disposed, and the space between the thin plate and the substrate is made to be substantially vacuum. The charging device is sealed in a charging device in which a part of the thin plate is made of an electron-transparent member, an electrode is arranged on the thin plate, and a voltage of a predetermined value is applied between the electron beam source and the electrode. A charging device characterized in that it is configured to accelerate electrons flowing out from the electron beam source and take them out of the charging device.
ることにより、選択的に帯電を行うよう構成したことを
特徴とする特許請求の範囲第１項記載の帯電装置。(2) The charging device according to claim 1, wherein the charging device is configured to perform charging selectively by controlling each of the plurality of electron beam sources independently.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16207786A JPH0761719B2 (en) | 1986-07-11 | 1986-07-11 | Charging device |
| US07/183,517 US4858062A (en) | 1986-06-04 | 1988-04-14 | Charging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16207786A JPH0761719B2 (en) | 1986-07-11 | 1986-07-11 | Charging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6319266A true JPS6319266A (en) | 1988-01-27 |
| JPH0761719B2 JPH0761719B2 (en) | 1995-07-05 |
Family
ID=15747645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16207786A Expired - Fee Related JPH0761719B2 (en) | 1986-06-04 | 1986-07-11 | Charging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0761719B2 (en) |
-
1986
- 1986-07-11 JP JP16207786A patent/JPH0761719B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0761719B2 (en) | 1995-07-05 |
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