JPS63179520A - Microwave plasma treatment apparatus with magnetic field - Google Patents
Microwave plasma treatment apparatus with magnetic fieldInfo
- Publication number
- JPS63179520A JPS63179520A JP984587A JP984587A JPS63179520A JP S63179520 A JPS63179520 A JP S63179520A JP 984587 A JP984587 A JP 984587A JP 984587 A JP984587 A JP 984587A JP S63179520 A JPS63179520 A JP S63179520A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- microwave
- waveguide
- plasma
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009832 plasma treatment Methods 0.000 title abstract description 6
- 230000001902 propagating effect Effects 0.000 claims abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000011810 insulating material Substances 0.000 abstract description 2
- 230000000644 propagated effect Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、有磁場マイクロ波プラズマ処理装置に係り、
特に半導体素子基板等の試料に好適な有磁場マイクロ波
プラズマ処理ｇ装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetic field microwave plasma processing apparatus,
The present invention particularly relates to a magnetic field microwave plasma processing apparatus suitable for samples such as semiconductor element substrates.
半導体素子基板等の試料をプラズマ処理する有磁場マイ
クロ波プラズマ処理装置としては、例えば、特公昭５６
−３７３１１号公報に記載のようなものが知られている
。As a magnetic field microwave plasma processing apparatus for plasma processing samples such as semiconductor element substrates, for example,
The one described in Japanese Patent No.-37311 is known.
このような有磁場マイクロ波プラズマ処理装置では、処
理室内でプラズマ処理される試料に対してマイクロ波発
振源は上方に配置され、直角方向にマイクロ波を変換す
る■管により試料へ放射されている。In such magnetic field microwave plasma processing equipment, the microwave oscillation source is placed above the sample being plasma-treated in the processing chamber, and the microwave is radiated to the sample through a tube that converts microwaves in a perpendicular direction. .
上記従来技術では、直角方向にマイクロ波を変換する導
波管によるマイクロ波の偏りが生じ、マイクロ波の電界
と磁場との相互作用によるプラズマの偏りが生じるため
、試料の処理が不均一になるといった問題がある。In the above conventional technology, the waveguide that converts the microwave in the orthogonal direction causes the microwave to be biased, and the interaction between the microwave's electric field and the magnetic field causes plasma to be biased, resulting in non-uniform sample processing. There are problems like this.
本発明の目的は、プラズマの偏りを補正することで、試
料の処理を均一化できる有磁場マイクロ波プラズマ処理
装置を提供することにある。An object of the present invention is to provide a magnetic field microwave plasma processing apparatus that can uniformize sample processing by correcting plasma bias.
上記目的は、マイクロ波を処理室内でプラズマ処理され
る試料の被処理面に回って方向を変換すると共に伝播す
る伝播手段を有する有磁場マイクロ波プラズマ処理装置
で、前記伝播手段を、前記試料の被処理面内と平行な面
内で回転可能に設けたものとすることにより、達成され
る。The above object is a magnetic field microwave plasma processing apparatus having a propagation means for transmitting microwaves to a surface of a sample to be plasma treated in a processing chamber, changing the direction and propagating the microwaves, This is achieved by providing the device rotatably in a plane parallel to the surface to be treated.
マイクロ波を試料の被処理面に向って方向変換すると共
に伝播する伝播手段を、試料のプラズマ処理時に該試料
の被処理面と平行な面内で回転させる。該回転により試
料に対するマイクロ波の放射量は均一に補正され、これ
によりマイクロ波の電界と磁場との相互作用によるプラ
ズマの偏りが補正される。A propagating means for changing the direction of microwaves and propagating them toward a surface to be processed of a sample is rotated in a plane parallel to the surface to be processed of the sample during plasma processing of the sample. By this rotation, the amount of microwave radiation to the sample is corrected to be uniform, and thereby the bias of the plasma due to the interaction between the electric field and the magnetic field of the microwave is corrected.
以下、本発明の一実施例を第１図により説明する。マイ
クロ波はマグネトロンｌより放射され矩形導波管２．面
角変換導波管３９円形導波管４により、絶縁材で成形さ
れた処理室であるペルジャー５に伝播される。このマイ
クロ波による電界と空芯コイル６の磁界との相互作用に
よりプラズマが形成され、試料台７上の試料８にプラズ
マ処理が施こされる。１を角変良導波管３と円形導波管
４との結合部に回転機構９を設け、駆動装置１０により
、試料８の被処理面と平行な面内でマグネトロン１を取
付けた矩形導波管２と直角変換導波管３を一体として回
転させ、試料８に対するマイクロ波の放射量を均一化す
る。このとき１回転周期は試料８をプラズマ処理するの
に要する時間より充分小さいことが必要である。なお、
直角変換導波管３と円形導波管４との結合部はマイクロ
波漏洩を抑制する機能を有し、また、回転機構は、歯車
や磁力を利用し起ものである。An embodiment of the present invention will be described below with reference to FIG. Microwaves are emitted from a magnetron 1 and passed through a rectangular waveguide 2. The beam is propagated through the plane angle conversion waveguide 39 and the circular waveguide 4 to the Pelger 5, which is a processing chamber formed of an insulating material. Plasma is formed by the interaction between the electric field generated by the microwave and the magnetic field of the air-core coil 6, and the sample 8 on the sample stage 7 is subjected to plasma treatment. A rotating mechanism 9 is provided at the joint between the square waveguide 3 and the circular waveguide 4, and the drive device 10 rotates the rectangular guide with the magnetron 1 attached in a plane parallel to the surface to be processed of the sample 8. The wave tube 2 and the orthogonal conversion waveguide 3 are rotated as a unit to equalize the amount of microwave radiation to the sample 8. At this time, it is necessary that one rotation period is sufficiently smaller than the time required to plasma-process the sample 8. In addition,
The joint between the orthogonal conversion waveguide 3 and the circular waveguide 4 has a function of suppressing microwave leakage, and the rotation mechanism uses gears and magnetic force.
本実施例によれば試料のプラズマ処理の均一化が図れる
効果がある。According to this embodiment, there is an effect that the plasma treatment of the sample can be made uniform.
本発明によれば、試料に対する７４４口波の偏りを補正
できるので、マイクロ波の電界と磁場との相互作用４こ
よるプラズマの偏りを補正でき試料の処理を均一化でき
るという効果がある。According to the present invention, since it is possible to correct the deviation of the 744 mouth wave with respect to the sample, it is possible to correct the deviation of the plasma caused by the interaction between the electric field and the magnetic field of the microwave, thereby making it possible to uniformize the processing of the sample.
第１図は本発明の一実施例の有磁場マイクロ波プラズマ
処理１ＷＬの縦断面図である。
ｌ・・・・・・マグネトロン、２・・・・・・矩形導波
管、３・・・直角変換導波管、４・・・・・・円形導波
管、５・・・・・・ベル纂ム
イ１図FIG. 1 is a longitudinal sectional view of a magnetic field microwave plasma treatment 1WL according to an embodiment of the present invention. 1... Magnetron, 2... Rectangular waveguide, 3... Right angle conversion waveguide, 4... Circular waveguide, 5... Bell string mui 1
Claims (1)
被処理面に向って方向を変換すると共に伝播する伝播手
段を有する有磁場マイクロ波プラズマ処理装置において
、前記伝播手段を、前記試料の被処理面と平行な面内で
回転可能に設けたことを特徴とする有磁場マイクロ波プ
ラズマ処理装置。1. In a magnetic field microwave plasma processing apparatus having a propagation means for changing the direction of microwaves and propagating them toward a surface to be processed of a sample to be plasma processed in a processing chamber, the propagation means is connected to a surface to be processed of the sample. A magnetic field microwave plasma processing apparatus characterized in that it is rotatable in a plane parallel to the plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP984587A JPS63179520A (en) | 1987-01-21 | 1987-01-21 | Microwave plasma treatment apparatus with magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP984587A JPS63179520A (en) | 1987-01-21 | 1987-01-21 | Microwave plasma treatment apparatus with magnetic field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63179520A true JPS63179520A (en) | 1988-07-23 |
Family
ID=11731464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP984587A Pending JPS63179520A (en) | 1987-01-21 | 1987-01-21 | Microwave plasma treatment apparatus with magnetic field |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63179520A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6352133B1 (en) | 1999-04-21 | 2002-03-05 | Hitachi Construction Machinery Co., Ltd. | Construction machinery |
-
1987
- 1987-01-21 JP JP984587A patent/JPS63179520A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6352133B1 (en) | 1999-04-21 | 2002-03-05 | Hitachi Construction Machinery Co., Ltd. | Construction machinery |
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