JPS63170289A - Aluminum nitride substrate with oxidation layer on surface - Google Patents
Aluminum nitride substrate with oxidation layer on surfaceInfo
- Publication number
- JPS63170289A JPS63170289A JP20687A JP20687A JPS63170289A JP S63170289 A JPS63170289 A JP S63170289A JP 20687 A JP20687 A JP 20687A JP 20687 A JP20687 A JP 20687A JP S63170289 A JPS63170289 A JP S63170289A
- Authority
- JP
- Japan
- Prior art keywords
- oxide layer
- ain
- substrate
- aluminum nitride
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 title claims description 19
- 230000003647 oxidation Effects 0.000 title 1
- 238000007254 oxidation reaction Methods 0.000 title 1
- 230000003746 surface roughness Effects 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
Landscapes
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は表面に酸化層を有する窒化アルミニウム基板に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an aluminum nitride substrate having an oxide layer on its surface.
［従来の技術］
゛窒化アルミニウム（ＡＩＮ＞は理論的には３００Ｗ／
ｍ、 ｋ以上と酸化べＩ） リウム（Ｂｅｄ）に匹敵す
る高い熱伝導率を有し、絶縁性、誘電性などの電気的性
質にもすぐれることから大電力化や高集積化が進む半導
体用絶縁放熱基板材料として注目されている。[Prior art] Aluminum nitride (AIN) is theoretically 300W/
m, k or more and beryllium oxide) It has a high thermal conductivity comparable to that of Bed, and has excellent electrical properties such as insulation and dielectricity, so it is a semiconductor that is becoming more and more powerful and highly integrated. It is attracting attention as a material for insulating heat dissipation substrates.
従来、半導体用絶縁放熱基板材料としては、広くアルミ
ナ（Ａｌ２Ｏ３＞が用いられてきたが、Ａ ｌ ２０３
の熱伝導率は２０ ｗ／ｍ、に程度であり、ＡＩＮヤＢ
ｅＯと比較して非常に小さいことから、大電力化や高集
積化に対応できなくなってきている。Ａｌ２Ｏ３に代っ
て熱伝導率の優れたＡＩＮ、ＢｅＯを用いる場合ＢｅＯ
は毒性があることから非常に使いづらい材料であり、ま
たＡＩＮは水と反応して水酸化物となる問題やＡｌ２Ｏ
３で用いたペーストが使用できないという問題が生じて
いる。Conventionally, alumina (Al2O3>) has been widely used as an insulating heat dissipation substrate material for semiconductors, but Al203
The thermal conductivity is about 20 w/m, and the thermal conductivity of AIN YaB
Since it is extremely small compared to eO, it has become unable to cope with higher power consumption and higher integration. When using AIN and BeO, which have excellent thermal conductivity, instead of Al2O3, BeO
It is a material that is very difficult to use due to its toxicity, and AIN also has the problem of reacting with water to form hydroxides and Al2O.
A problem has arisen in that the paste used in step 3 cannot be used.
［発明が解決しようとする問題点］
本発明は水蒸気を含む雰囲気中でも変質しないＡ Ｉ
ＮＩＬ板を提供することを目的としている。[Problems to be solved by the invention] The present invention solves the problem of AI that does not deteriorate even in an atmosphere containing water vapor.
The purpose is to provide NIL boards.
［問題点を解決するための手段」
本発明のＡＩＮ基板は、表面に酸化層を有し、その厚さ
が３μｍ未満であり、かつ表面の祖さＲａ１ｆｉ０．５
μｍ以下であることを特徴とするＡＩＮ基板である。[Means for Solving the Problems] The AIN substrate of the present invention has an oxide layer on the surface, the thickness of which is less than 3 μm, and the surface roughness Ra1fi0.5.
This is an AIN substrate characterized by a thickness of μm or less.
表面の酸化層の厚さは３μｍ未満でなければならず、好
ましくは１μｍ以下、より好ましくは０．３〜０．８μ
ｍである。酸化層の厚さが３μｍを超えるものでは、酸
化層とＡＩＮ層との熱膨張の差から酸化層にクラックが
入りやすくなり好ましくない。また酸化層の厚さが極端
に厚いものでは、酸化層の熱伝導率がＡＩＮのそれに比
べ非常に小さいので、基板の熱伝導率が低くなり好まし
くない。The thickness of the surface oxide layer should be less than 3 μm, preferably 1 μm or less, more preferably 0.3-0.8 μm
It is m. If the thickness of the oxide layer exceeds 3 μm, it is not preferable because the oxide layer tends to crack due to the difference in thermal expansion between the oxide layer and the AIN layer. Furthermore, if the thickness of the oxide layer is extremely thick, the thermal conductivity of the oxide layer is much smaller than that of AIN, which is undesirable because the thermal conductivity of the substrate becomes low.
表面の粗さＲａは０．５μｍ以下でなければならず、好
ましくは０．３μｍ以下、ざらに好ましくは０．１μｍ
以下である。表面粗さＲａが０．５μｍを超えるもので
は、基板の強度が低下する等の機械的特性上の問題が生
じて好ましくない。Surface roughness Ra must be 0.5 μm or less, preferably 0.3 μm or less, and more preferably 0.1 μm
It is as follows. If the surface roughness Ra exceeds 0.5 μm, problems with mechanical properties such as a decrease in the strength of the substrate occur, which is not preferable.
本発明のＡＩＮ基板は以下の様にして得られる。つまり
表面粗さＲａが０．４５１１１以下であるところのＡＩ
Ｎ基板を酸素を含む雰囲気中で８００〜１０００℃で加
熱処理することによって得られる。加熱処理することに
より表面のＡＩＮが酸素と反応することにより酸化物と
なり表面に酸化層が形成される。The AIN substrate of the present invention can be obtained as follows. In other words, AI where the surface roughness Ra is 0.45111 or less
It is obtained by heat-treating an N substrate at 800 to 1000° C. in an atmosphere containing oxygen. By heat treatment, AIN on the surface reacts with oxygen to become an oxide, and an oxide layer is formed on the surface.
加熱処理するＡＩＮ基板の表面の粗さＲａは、加熱処理
後の酸化層の表面の粗さＲａに影響するので、用いるＡ
ＩＮ基板の表面の粗さＲａは０゜４５μｍ以下が望まし
い。The surface roughness Ra of the AIN substrate to be heat-treated affects the surface roughness Ra of the oxide layer after the heat treatment, so the A used
The surface roughness Ra of the IN substrate is preferably 0°45 μm or less.
また用いる基板の嵩密度は３．１５ｇ／Ｃｍ ３以上の
ものを用いることが望ましく、ざらには３、２０９／Ｃ
ｌｌｌ３以上が望ましく、それ以下だと開気孔率が多く
なり表面の酸化層が不均一となりやすい。加熱処理を行
う雰囲気は、酸素を含んだ雰囲気で行い、常圧、減圧、
加圧下のいずれの場合でも構わない。処理温度は９００
〜１１００℃で行うと酸化層の厚さを充分制御できるが
、この範囲をはずれると、酸化層の形成が遅すぎたり、
速すぎたりするため好ましくない。The bulk density of the substrate used is preferably 3.15g/Cm3 or higher, and roughly 3.209g/Cm3 or more.
It is desirable that it is 113 or more; if it is less than that, the open porosity will increase and the oxidized layer on the surface will likely become non-uniform. The atmosphere for heat treatment is an atmosphere containing oxygen, and can be carried out at normal pressure, reduced pressure,
Any case under pressure may be used. Processing temperature is 900
The thickness of the oxide layer can be well controlled when carried out at ~1100°C, but outside this range the formation of the oxide layer may be too slow or
This is not desirable as it may be too fast.
以下、実施例によって本発明を具体的に説明する。Hereinafter, the present invention will be specifically explained with reference to Examples.
［実施例］
実施例に記載のＡＩＮ基板表面の酸化層の厚さは、日立
製作新製３−６５０形走査型電子顕微鏡によるＳＥＭ観
察から求めた。つまり、得られたＳＥＭ写真において任
意の点について酸化層の厚さを求め、その平均値を酸化
層の厚さとした。[Example] The thickness of the oxide layer on the surface of the AIN substrate described in the example was determined from SEM observation using a 3-650 type scanning electron microscope manufactured by Hitachi. That is, the thickness of the oxide layer was determined at any point in the obtained SEM photograph, and the average value was taken as the thickness of the oxide layer.
基板の嵩密度は溶媒に水を用いてアルキメデス法により
求めた。The bulk density of the substrate was determined by the Archimedes method using water as a solvent.
ＡＩＮ基板の表面の粗ざＲａは■小板研究所、表面粗さ
測定器サーフコーダ５Ｅ−３００により求めた。The roughness Ra of the surface of the AIN substrate was determined using a surface roughness measuring instrument Surfcoder 5E-300 manufactured by Koita Research Institute.
実施例１
嵩密度３．２５１：ｌ／Ｃｍ ３で表面の粗さＲａが０
．２５μｍであり、大きさが２５ｍｍ角で、厚さ０．６
４１１１１１のＡＩＮ基板を大気中で９５０℃で３時間
加熱処理した。加熱処理したＡＩＮ基板の破断面をＳＥ
Ｍにより観察し、求めた酸化層の厚みは０．３μｍであ
り、表面の粗さＲａは０．２７μｍであった。Example 1 Bulk density: 3.251: l/Cm 3, surface roughness Ra is 0
．． 25μm in size, 25mm square, and thickness 0.6
The AIN substrate No. 411111 was heat-treated at 950° C. for 3 hours in the air. SE of the fractured surface of the heat-treated AIN board
The thickness of the oxidized layer determined by observation using M was 0.3 μm, and the surface roughness Ra was 0.27 μm.
実施例２
実施例１において９５０℃を１０５０℃とする以外はす
べて実施例１と同じにした。ＳＥＭ観察による酸化層の
厚みは０．７μｍであり、表面の粗さＲａは０．２６μ
ｍであった。Example 2 Everything was the same as in Example 1 except that 950°C in Example 1 was changed to 1050°C. The thickness of the oxide layer according to SEM observation is 0.7 μm, and the surface roughness Ra is 0.26 μm.
It was m.
「発明の効果」
以上説明したよう（、本発明のＡＩＮ基板は空気中の水
分によって変質することがなく、基板表面における回路
形成用ペーストとのなじみもよい。しかも酸化層が薄い
ので急激な温度変化によるクラックの発生もなく、半導
体用絶縁放熱基板等の材料として極めて有用である。"Effects of the Invention" As explained above, the AIN board of the present invention does not deteriorate due to moisture in the air, and has good compatibility with the circuit forming paste on the board surface.Moreover, since the oxide layer is thin, it can be easily exposed to sudden temperatures. No cracks occur due to changes, making it extremely useful as a material for insulating heat dissipation substrates for semiconductors, etc.
特許出願人 新日本化学工業株式会社 旭化成工業株式会社Patent applicant Shin Nippon Chemical Industry Co., Ltd. Asahi Kasei Industries, Ltd.
Claims (1)
つ表面の粗さＲａが０．５μｍ以下であることを特徴と
する窒化アルミニウム基板。An aluminum nitride substrate having an oxide layer on its surface, having a thickness of less than 3 μm, and a surface roughness Ra of 0.5 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20687A JPS63170289A (en) | 1987-01-06 | 1987-01-06 | Aluminum nitride substrate with oxidation layer on surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20687A JPS63170289A (en) | 1987-01-06 | 1987-01-06 | Aluminum nitride substrate with oxidation layer on surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63170289A true JPS63170289A (en) | 1988-07-14 |
Family
ID=11467498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20687A Pending JPS63170289A (en) | 1987-01-06 | 1987-01-06 | Aluminum nitride substrate with oxidation layer on surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63170289A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03292791A (en) * | 1990-04-11 | 1991-12-24 | Toshiba Corp | Wiring board |
| EP0615964A2 (en) * | 1993-03-19 | 1994-09-21 | Sumitomo Electric Industries, Limited | Aluminium nitride ceramics and method for preparing the same |
| WO1995002313A1 (en) | 1993-07-06 | 1995-01-19 | Kabushiki Kaisha Toshiba | Heat dissipating sheet |
| US6071592A (en) * | 1996-04-12 | 2000-06-06 | Dowa Mining Co., Ltd. | Metal-ceramic composite substrate |
| JP2002076192A (en) * | 2000-08-30 | 2002-03-15 | Toshiba Electronic Engineering Corp | Aluminum nitride board and semiconductor package using it |
| US6696103B1 (en) | 1993-03-19 | 2004-02-24 | Sumitomo Electric Industries, Ltd. | Aluminium nitride ceramics and method for preparing the same |
-
1987
- 1987-01-06 JP JP20687A patent/JPS63170289A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03292791A (en) * | 1990-04-11 | 1991-12-24 | Toshiba Corp | Wiring board |
| EP0615964A2 (en) * | 1993-03-19 | 1994-09-21 | Sumitomo Electric Industries, Limited | Aluminium nitride ceramics and method for preparing the same |
| EP0615964A3 (en) * | 1993-03-19 | 1994-12-28 | Sumitomo Electric Industries | Aluminium nitride ceramics and method for preparing the same. |
| US5955148A (en) * | 1993-03-19 | 1999-09-21 | Sumitomo Electric Industries, Ltd. | Aluminium nitride ceramics and method for preparing the same |
| US6696103B1 (en) | 1993-03-19 | 2004-02-24 | Sumitomo Electric Industries, Ltd. | Aluminium nitride ceramics and method for preparing the same |
| WO1995002313A1 (en) | 1993-07-06 | 1995-01-19 | Kabushiki Kaisha Toshiba | Heat dissipating sheet |
| US6071592A (en) * | 1996-04-12 | 2000-06-06 | Dowa Mining Co., Ltd. | Metal-ceramic composite substrate |
| JP2002076192A (en) * | 2000-08-30 | 2002-03-15 | Toshiba Electronic Engineering Corp | Aluminum nitride board and semiconductor package using it |
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