JPH01220462A - Aluminum nitride substrate whose surface qualify is improved - Google Patents
Aluminum nitride substrate whose surface qualify is improvedInfo
- Publication number
- JPH01220462A JPH01220462A JP63044544A JP4454488A JPH01220462A JP H01220462 A JPH01220462 A JP H01220462A JP 63044544 A JP63044544 A JP 63044544A JP 4454488 A JP4454488 A JP 4454488A JP H01220462 A JPH01220462 A JP H01220462A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- aln substrate
- aln
- hard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 41
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 5
- 239000012298 atmosphere Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910017109 AlON Inorganic materials 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000002344 surface layer Substances 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- QBYJBZPUGVGKQQ-SJJAEHHWSA-N aldrin Chemical compound C1[C@H]2C=C[C@@H]1[C@H]1[C@@](C3(Cl)Cl)(Cl)C(Cl)=C(Cl)[C@@]3(Cl)[C@H]12 QBYJBZPUGVGKQQ-SJJAEHHWSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、表面に酸化アルミニウムおよび酸窒化アルミ
ニウムを主成分とする層を有する窒化アルミニウム基板
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an aluminum nitride substrate having a layer on its surface containing aluminum oxide and aluminum oxynitride as main components.
窒化アルミニウム（ＡｆｆＮ）は理論的には３００ｗ／
ｍ、に以上と酸化ベリリウム（Ｂｅｄ）に匹敵する高い
熱伝導率を有し、絶縁性、誘電性などの電気的性質にも
すぐれることから大電力化や高集積化が進む半導体用絶
縁放熱基板材料として注目されている。Aluminum nitride (AffN) is theoretically 300w/
It has high thermal conductivity comparable to beryllium oxide (BED) of more than 1.5 m, and has excellent electrical properties such as insulation and dielectricity, so it is an insulating heat dissipation material for semiconductors, which is becoming increasingly large in power and highly integrated. It is attracting attention as a substrate material.
従来、半導体用絶縁放熱基板材料としては、広くアルミ
ナ（Ａｌｔｃｈ）が用いられてきたがＡ ｌ ｚ Ｏ３
の熱伝導率は２０稠／ｍ、 ｋ程度であり、ＡＩＮやＢ
、Ｏと比較して非常に小さいことから、大電力化や高集
積化に対応できなくなってきている。ＡｌｚＯｚに代っ
て熱伝導率の優れたＡ７！Ｎ、Ｂ、Ｏを用いる場合、Ｂ
ｅＯは毒性があることから非常に使いづらい材料であり
、またＡＩＮは水と反応して水酸化物となる問題やＡｌ
ｔｏ−ａで用いたペーストが使用できないという問題が
生じている。Conventionally, alumina (Altch) has been widely used as an insulating heat dissipation substrate material for semiconductors, but Al z O3
The thermal conductivity of AIN and B is about 20/m, k.
, O, it is becoming impossible to cope with higher power consumption and higher integration. A7 with excellent thermal conductivity replaces AlzOz! When using N, B, and O, B
eO is a material that is very difficult to use due to its toxicity, and AIN has the problem of reacting with water to form hydroxides and Al
A problem has arisen in that the paste used in to-a cannot be used.
このため、特開昭５４−３１４１１号、特開昭６２−４
６９８６号に見られる様にＡＩＮ焼結体表面にＡｌ□０
１層を形成させることが提案されている。しかしながら
、ＡｉｔｏｚＮの厚さが薄いと水との反応が抑えにくく
、またＡ１．０．ｆ＠が厚くなるとＡＮ２０３層と下地
のＡＩＮ層との熱膨張率の違いから、Ａ１！０１とＡＩ
Ｎとの界面に応力がかかりＡｌｚＯｘ層のはく離を生ず
る。For this reason, JP-A-54-31411, JP-A-62-4
As seen in No. 6986, Al□0 is applied to the surface of the AIN sintered body.
It has been proposed to form one layer. However, if the thickness of AitozN is thin, it is difficult to suppress the reaction with water, and A1.0. As f@ becomes thicker, A1!01 and AI
Stress is applied to the interface with N, causing peeling of the AlzOx layer.
本発明は、水との反応が起こりにくく、また熱膨張率の
違いによるはく離が生じにくい表面層をもったＡｌＮ基
板を提供することを目的としている。An object of the present invention is to provide an AlN substrate having a surface layer that is less likely to react with water and less likely to peel off due to differences in thermal expansion coefficients.
本発明のＡｌＮ基板は、表面にＡ１ｚＯ３および酸窒化
アルミニウム（ＡｌＯＮ）を主成分とする層を有するも
のである。なお、ＡｌＮ基板を製造する際に、焼結助剤
を用いる場合があり、その焼結助剤と、Ａｇ２Ｏ３およ
び／あるいはＡＮＮとの化合物が本発明のＡＮｚＯ３お
よびＡｌ０Ｎからなる相に混入してくる場合があるが、
本発明においては差しつかえない。The AlN substrate of the present invention has a layer on the surface whose main components are A1zO3 and aluminum oxynitride (AlON). Note that when manufacturing an AlN substrate, a sintering aid may be used, and a compound of the sintering aid and Ag2O3 and/or ANN is mixed into the phase consisting of ANzO3 and Al0N of the present invention. In some cases,
This is not a problem in the present invention.
Ａｇ２Ｏ３およびＡＮＯＮからなる相を主成分とする表
面層の厚さは１０μｍ以下が好ましく、さらには５μｍ
以下、またさらには３μｍ以下が好ましいが、下限とし
ては０．２μｍ程度までが適当である。The thickness of the surface layer mainly composed of a phase consisting of Ag2O3 and ANON is preferably 10 μm or less, more preferably 5 μm.
The thickness is preferably 3 .mu.m or less, and preferably 3 .mu.m or less, but a suitable lower limit is about 0.2 .mu.m.
また、Ａｌ、Ｏ，およびＡｌ０Ｎからなる相を主成分と
する表面層を有するＡｌＮ基板の、その表面層の表面粗
さは１μｍ以下が好ましい。さらには０．５μｍ以下が
好ましく、さらに好ましくは０．３μｍ以下であり、ま
たさらに好ましくは、０．１μｍ以下である。下限は特
に限定されないが製造上は０．００１μｍ程度までが好
ましい。表面粗さが小さい程、表面が平滑であり、例え
ば基板表面に回路パターンを形成する場合、より精度よ
く形成できる利点がある。Furthermore, the surface roughness of the surface layer of an AlN substrate having a surface layer mainly composed of phases consisting of Al, O, and AlON is preferably 1 μm or less. More preferably, it is 0.5 μm or less, more preferably 0.3 μm or less, and even more preferably 0.1 μm or less. The lower limit is not particularly limited, but from the viewpoint of manufacturing, it is preferably about 0.001 μm. The smaller the surface roughness, the smoother the surface, which has the advantage that, for example, when forming a circuit pattern on the surface of a substrate, it can be formed with higher accuracy.
本発明のＡｌＮ基板は以下の様にして得られる。The AlN substrate of the present invention can be obtained as follows.
まず、ＡｌＮ基板を、酸素を含む雰囲気中で８００〜１
２００℃で加熱処理し、ＡｌＮ基板の表面にＡｌ２Ｏ，
Ｎを形成する。次に得られた、表面にＡｌ２Ｏ３層をも
ったＡｌＮ基板を不活性ガス雰囲気中で加熱処理する。First, an AlN substrate was heated to 800 to 1
After heat treatment at 200℃, Al2O,
form N. Next, the obtained AlN substrate having an Al2O3 layer on its surface is heat-treated in an inert gas atmosphere.
このときの加熱処理温度は１４００〜１８００℃である
。この加熱処理により表面のＡ １ ｚ Ｏ３層が下地
のＡＩＮ層と反応してＡＩ！ＯＮを生成する。The heat treatment temperature at this time is 1400 to 1800°C. Through this heat treatment, the surface A 1 z O3 layer reacts with the underlying AIN layer to form AI! Generate ON.
また別の方法としては、最初、酸素を含む雰囲気中で１
４００℃〜１８００℃で加熱処理を行い、ＡｌＮ基板上
にＡｌｏＮ層を形成し、その後、酸素を含む雰囲気中で
８００〜１２００℃で加熱処理し、ＡｌｏＮ層の一部を
ＡｌｔＯｘ層とすることにより、本発明のＡＩｌ、Ｎ基
板が得られる。Another method is to firstly
By performing heat treatment at 400°C to 1800°C to form an AloN layer on the AlN substrate, and then heat treating at 800 to 1200°C in an oxygen-containing atmosphere to make part of the AloN layer an AltOx layer. , an AIl,N substrate of the present invention is obtained.
加熱処理するＡｌＮ基板の表面粗さは、加熱処理後の表
面層の表面粗さに影響するので、用いるＡｊ’Ｎ基板の
表面粗さは１μｍ以下が好ましい。Since the surface roughness of the AlN substrate to be heat treated affects the surface roughness of the surface layer after the heat treatment, the surface roughness of the Aj'N substrate used is preferably 1 μm or less.
また用いる基板の嵩密度は、３．１５ｇ／ｃｃ以上のも
のを用いることが望ましく、さらには３．２０ｇ／ｃｃ
以上が望ましい。嵩密度が３．１５ｇ／ｃｃを下回るも
のでは開孔率が大きくなり、加熱処理によって得られる
表面層が不均一となりやすい。The bulk density of the substrate used is preferably 3.15 g/cc or more, more preferably 3.20 g/cc.
The above is desirable. When the bulk density is less than 3.15 g/cc, the porosity becomes large and the surface layer obtained by heat treatment tends to become non-uniform.
また別の方法としては、Ａｌ□０．とＡ１０Ｎを蒸着に
よりＡｌＮ基板に形成してもよい。その場合、蒸着方法
としては、真空蒸着法、スパソツタリング法等従来の公
知の技術で行うことができる。Another method is Al□0. and A10N may be formed on an AlN substrate by vapor deposition. In that case, as a vapor deposition method, conventionally known techniques such as a vacuum vapor deposition method and a spa-sottling method can be used.
またＡｌｔ’ｓ、Ａｌ０Ｎの蒸着は交互に、あるいは同
時に蒸着してもよい。Further, Alt's and Al0N may be deposited alternately or simultaneously.
以下、実施例によって本発明を具体的に説明する。Hereinafter, the present invention will be specifically explained with reference to Examples.
（実施例）
実施例に記載のＡｌＮ基板表面の酸化層の厚さは、日立
製作所製Ｓ−６５０形走査型電子ｒ！Ｒ微鏡によるＳＥ
Ｍ観察から求めた。つまり、得られた □ＳＥＭ写真
において任意の点について酸化層の厚さを求め、その平
均値を酸化層の厚さとした。(Example) The thickness of the oxide layer on the surface of the AlN substrate described in the example was measured using a scanning electron r! model S-650 manufactured by Hitachi, Ltd. SE with R microscope
Obtained from M observation. That is, the thickness of the oxide layer was determined at any point in the obtained □ SEM photograph, and the average value was taken as the thickness of the oxide layer.
基板の嵩密度は溶媒に水を用いてアルキメデス法により
求めた。The bulk density of the substrate was determined by the Archimedes method using water as a solvent.
ＡｌＮ基板の表面の粗さはＪＩＳ Ｂ ０６０１−１９
８２に示される中心線平均粗さ（Ｒａ）で（株）小板研
究所、表面粗さ測定器サーフコーダ５Ｅ−３０Ｃにより
求めた。The surface roughness of the AlN substrate is JIS B 0601-19.
The center line average roughness (Ra) shown in 82 was determined using a surface roughness measuring instrument Surfcoder 5E-30C manufactured by Koita Research Institute.
表面層の結晶相の同定は、理学電気（株）製ガイガーフ
レックス型式Ｄ−９ＣによるＸＬ７１回折によった。The crystal phase of the surface layer was identified by XL71 diffraction using Geigerflex model D-9C manufactured by Rigaku Denki Co., Ltd.
（実施例１） 。(Example 1).
嵩密度３．２５ｇ／ｃｃで表面粗さＲａが０．２５ μ
ｍであり、大きさが２５１１角で、厚さ０．６４龍のＡ
ｌＮ基板を大気中１１５０℃で３時間加熱処理した。Bulk density 3.25g/cc and surface roughness Ra 0.25μ
m, the size is 2511 squares, and the thickness is 0.64 dragons.
The IN substrate was heat-treated at 1150° C. for 3 hours in the air.
なお加熱処理前のＡＩ！Ｎ基板の表面のＸ線回折を行っ
たところＡｆｆＮのピークのみであった。得られた基板
をさらに窒素雰囲気中で１６５０℃、１時間加熱処理し
た。In addition, AI before heat treatment! When the surface of the N substrate was subjected to X-ray diffraction, only the AffN peak was found. The obtained substrate was further heat-treated at 1650° C. for 1 hour in a nitrogen atmosphere.
得られたＡＩＮ基板の表面についてＸ線回折を行ったと
ころＡＩＮのピーク以外にα−ＡｆｚＯ。When X-ray diffraction was performed on the surface of the obtained AIN substrate, α-AfzO was found in addition to the AIN peak.
とＡｌ０Ｎのピークが認められた。またこの基板の破断
面をＳＥＭにより観察したところ、ＡＩＮの組織とは異
なる表面層の厚みは７μｍであった。A peak of Al0N was observed. Further, when the fractured surface of this substrate was observed by SEM, the thickness of the surface layer, which was different from the AIN structure, was 7 μm.
また得られた基板の表面粗さＲａは０．２７μｍであっ
た。Moreover, the surface roughness Ra of the obtained substrate was 0.27 μm.
以上説明したように、本発明のＡＩＮ基板は空気中の水
分によって変質しに＜＜、かつ基板表面における回路形
成用ペーストとのなじみもよい。As explained above, the AIN substrate of the present invention is not deteriorated by moisture in the air and is compatible with the circuit forming paste on the surface of the substrate.
しかもＡＩＮ基板表面層がＡＩ、Ｏ，およびＡｌ０Ｎか
らなる相を主成分とする層を有することから、温度変化
によるクランクあるいは、はく離等の発生もなく、半導
体用放熱基板等の材料として極めて有効である。Moreover, since the AIN substrate surface layer has a layer mainly composed of phases consisting of AI, O, and Al0N, there is no occurrence of cranking or peeling due to temperature changes, making it extremely effective as a material for semiconductor heat dissipation substrates, etc. be.
特許出願人 旭化成工業株式会社Patent applicant: Asahi Kasei Industries, Ltd.
Claims (1)
らなる相を主成分とする層を有することを特徴とする表
面改質された窒化アルミニウム基板A surface-modified aluminum nitride substrate characterized by having a layer on the surface whose main component is a phase consisting of aluminum oxide and aluminum oxynitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63044544A JPH01220462A (en) | 1988-02-29 | 1988-02-29 | Aluminum nitride substrate whose surface qualify is improved |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63044544A JPH01220462A (en) | 1988-02-29 | 1988-02-29 | Aluminum nitride substrate whose surface qualify is improved |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01220462A true JPH01220462A (en) | 1989-09-04 |
Family
ID=12694448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63044544A Pending JPH01220462A (en) | 1988-02-29 | 1988-02-29 | Aluminum nitride substrate whose surface qualify is improved |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01220462A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018170116A (en) * | 2017-03-29 | 2018-11-01 | 京セラ株式会社 | heater |
| CN116130563A (en) * | 2023-04-14 | 2023-05-16 | 江西兆驰半导体有限公司 | Substrate stripping method |
-
1988
- 1988-02-29 JP JP63044544A patent/JPH01220462A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018170116A (en) * | 2017-03-29 | 2018-11-01 | 京セラ株式会社 | heater |
| CN116130563A (en) * | 2023-04-14 | 2023-05-16 | 江西兆驰半导体有限公司 | Substrate stripping method |
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