JPS63169379A - Plastic coated with carbon film - Google Patents
Plastic coated with carbon filmInfo
- Publication number
- JPS63169379A JPS63169379A JP30087A JP30087A JPS63169379A JP S63169379 A JPS63169379 A JP S63169379A JP 30087 A JP30087 A JP 30087A JP 30087 A JP30087 A JP 30087A JP S63169379 A JPS63169379 A JP S63169379A
- Authority
- JP
- Japan
- Prior art keywords
- plastic
- column
- film
- carbon
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004033 plastic Substances 0.000 title claims abstract description 32
- 229920003023 plastic Polymers 0.000 title claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000010432 diamond Substances 0.000 claims abstract description 16
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 15
- 239000007789 gas Substances 0.000 abstract description 29
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 5
- 150000001721 carbon Chemical group 0.000 abstract description 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 26
- 210000002381 plasma Anatomy 0.000 description 20
- 230000005684 electric field Effects 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はマイクロ波電界を加えるとともに、外部磁場を
加え、それらの相互作用を用い、かつその電界の最も大
きい空間またはその近傍に反応性気体が筒内を透過せし
める構成の筒状カラムの被膜形成手段を設け、このカラ
ムを回転または微振動させて、ダイヤモンドを含有する
炭素膜をプラスチックスの全表面に形成せしめるととも
に、この部品の凹部にも良好に被膜形成がされるべく、
混成共Ｕ１を利用して被膜形成を行うための薄膜形成方
法に関する。Detailed Description of the Invention [Field of Application of the Invention] The present invention applies a microwave electric field and an external magnetic field, uses their interaction, and generates a reactive gas in a space where the electric field is greatest or in the vicinity thereof. A film forming means is provided in a cylindrical column configured to allow the inside of the cylinder to pass through, and this column is rotated or slightly vibrated to form a carbon film containing diamond on the entire surface of the plastic and also in the recesses of this part. In order to form a good film,
The present invention relates to a thin film forming method for forming a film using hybrid compound U1.
従来、薄膜の形成手段としてｌｌ：ｃＲ（電子サイクロ
トロン共鳴）条件即ちＩ Ｘｌ０−”〜Ｉ Ｘｌ０−’
ｔｏｒｒの条件下で、少なくとも電子が１周するに十分
な低い圧力で活性種を作り、その発散磁場を利用してこ
の共鳴空間より「離れた位置」に基板を配設して、そこ
で被膜特にアモルファス構造を有する被膜を形成する電
子サイクロトロン共鳴（ＥＣＲともいう）を用いる方法
が知られている。Conventionally, as a means for forming a thin film, ll:cR (electron cyclotron resonance) conditions, that is, I Xl0-'' to I Xl0-'
Under torr conditions, active species are created at a pressure low enough for at least one electron to make one round, and the diverging magnetic field is used to place a substrate "at a distance" from this resonant space, where the coating, especially A method using electron cyclotron resonance (also referred to as ECR) to form a film having an amorphous structure is known.
このＥＣＲＣＶＤ法は活性種を磁場によりビンチングし
高エネルギ化することにより、電子エネルギを大きくし
、効率よ（気体をプラズマ化させている。そのため、高
エネルギ条件下でのプラズマをイオンシャワー化（一方
向のみガス流を有する）した反応性気体を到達させるこ
とにより炭素被膜形成を行っていた。This ECRCVD method increases the electron energy by binning the active species using a magnetic field to increase the energy, thereby increasing the efficiency (turning gas into plasma. Therefore, the plasma under high energy conditions is converted into an ion shower (one The carbon film was formed by reaching a reactive gas (having a gas flow in only one direction).
しかしかかるシャワー化した炭素化物の反応性気体を用
いた炭素被膜形成方法では、凹凸表面を有する凹部また
は凸部の側面への被膜形成はまったく不可能であった。However, in this method of forming a carbon film using a reactive gas of showered carbonide, it is completely impossible to form a film on the side surfaces of recesses or protrusions having uneven surfaces.
また、多数の時計用部品、例えばプラスチック、金属ま
たはガラスでできた時計用枠、窓等の被膜形成用物体の
影の部分にダイヤモンドを一部に含む炭素被膜形成を行
うこともまったく不可能であった。Furthermore, it is completely impossible to form carbon coatings containing diamonds in the shadows of many watch parts, such as watch frames and windows made of plastic, metal, or glass. there were.
また、これまではかかるＥＣＲの存在領域でないいわゆ
る０、１〜３００ｔｏｒｒ特に３ｔｏｒｒ以上の高い圧
力での被膜形成をさせんとしても、プラズマが発生せず
、高密度プラズマを利用することは不可能とされていた
。特にかかる高い圧力でダイヤモンド結晶性を有する被
膜を形成することはこれまで不可能と考えられていた。Furthermore, even if we try to form a film at a high pressure of so-called 0, 1 to 300 torr, especially 3 torr or more, which is not the area where such ECR exists, no plasma is generated and it is impossible to use high-density plasma. It had been. It was previously considered impossible to form a film having diamond crystallinity especially under such high pressure.
しかし本発明人は０．１〜３００ ｔｏｒｒ好ましくは
３〜３０ｔｏｒｒの高い圧力でも高密度プラズマを作り
得ること、そしてかかるプラズマはＥＣＲではな（「混
成共鳴」という新しいモードであることを見出した。ま
た、かかる混成共鳴領域では被膜形成用物体の凹凸部の
側面にも炭素被膜形成を行い得ることをも合わせて発見
した。However, the inventors have discovered that high-density plasmas can be created even at high pressures of 0.1 to 300 torr, preferably 3 to 30 torr, and that such plasmas are not ECR but a new mode called "hybrid resonance." We have also discovered that in such a hybrid resonance region, it is possible to form a carbon film on the side surface of the uneven portion of the film-forming object.
本発明は、「混成共鳴」を用いた高密度プラズマを利用
して炭素被膜形成をプラスチックスの表面に行うもので
ある。The present invention utilizes high-density plasma using "hybrid resonance" to form a carbon film on the surface of plastics.
このプラスチックスとして、潤滑性に優れたことを利用
した歯車、耐摩耗性を利用した玩具、またはボタン状ま
たは球状の物体、また宝飾（ダイヤモンドの宝石で装飾
する）用物体例えばメガネの縁、ボールペン、シャープ
ペンシル等の外枠の全表面にコーティングせんとするも
のである。These plastics can be used to make gears that take advantage of their excellent lubricity, toys that take advantage of their wear resistance, or button-shaped or spherical objects, as well as jewelry (decorated with diamond gemstones) objects such as the rims of glasses, ballpoint pens, etc. , which is intended to coat the entire surface of the outer frame of mechanical pencils, etc.
これらの被膜形成用プラスチックスを筒状カラムの内に
保持し、この内にプラズマ化した気体を流し、その反応
生成物をプラスチックス用部品の表面にコーティングさ
せる。この目的のため、マイクロ波電力の電界強度が最
も大きくなる領域またはその近傍に被形成面を有する物
体を配設する。These film-forming plastics are held in a cylindrical column, and plasma gas is flowed into the column to coat the surface of the plastic parts with the reaction product. For this purpose, an object having a surface to be formed is placed in or near a region where the electric field strength of microwave power is greatest.
さらにこの物体の全表面に均一にコーティングするため
、このカラムを回転または振動せしめ、気体にとって常
に物体の新しい表面が出るように工夫している。また、
高密度プラズマを０．１〜３００ｔｏｒｒの高い圧力で
発生、持続させるため、カラムを有する空間にまずｌＸ
ｌ０−”〜Ｉ Ｘ １０−’ｔｏｒｒの低真空下でＥＣ
Ｒ（電子サイクロトロン共鳴）を生ぜしめる。さらに気
体を導入し、１×１０−Ｉ〜３Ｘ１０”ｔｏｒｒ好まし
くは３〜３０ｔｏｒｒと高い空間圧力にプラズマ状態を
持続しつつ変化せしめ、この空間の生成物気体の単位空
間あたりの濃度をこれまでのＥＣＲＣＶＯ法に比べ１０
２〜１０５倍程度の高濃度にする。Furthermore, in order to uniformly coat the entire surface of the object, the column is rotated or vibrated so that new surfaces of the object are always exposed to the gas. Also,
In order to generate and sustain high-density plasma at a high pressure of 0.1 to 300 torr, first 1X
EC under low vacuum of l0-''~I x 10-'torr
Produces R (electron cyclotron resonance). Furthermore, gas is introduced and the plasma state is changed to a high space pressure of 1 x 10-I to 3 x 10" torr, preferably 3 to 30 torr, and the concentration per unit space of the product gas in this space is increased from the previous level. 10 compared to ECRCVO method
Make the concentration about 2 to 105 times higher.
するとかかる高い圧力においてのみ初めて分解または反
応をさせることができる炭素被膜の形成が可能となる。This makes it possible to form a carbon film that can decompose or react only at such high pressures.
即ちダイヤモンド、ｉ−カーボン（ダイヤモンドまたは
微結晶粒を有する炭素被膜）被膜である。That is, it is a diamond or i-carbon (diamond or carbon coating having microcrystalline grains) coating.
このダイヤモンドを含む炭素膜の成膜機構は、被膜形成
過程において形成されつつある被膜の宙の部分の構成物
（例えば結晶部分）を残し、表面での結晶成長をせしめ
つつ、粗の部分の構成（例えばアモルファス部分）を除
去して、即ちエツチングをさせつつ行わんとするもので
ある。そして形成された被膜の少なくとも一部に結晶性
（ダイヤモンド）を有する被膜を形成せんとするもので
ある。The formation mechanism of this diamond-containing carbon film is to leave the components (for example, crystalline parts) in the airy parts of the film that are being formed during the film formation process, to allow crystal growth on the surface, and to form the rough parts. The purpose is to remove (for example, an amorphous part), that is, to perform etching. A film having crystallinity (diamond) is then formed on at least a portion of the formed film.
すなわち本発明は従来より知られたマイクロ波を用いた
プラズマＣＶＤ法に磁場の力を加え、マイクロ波の電場
と磁場との相互作用を用いている。That is, the present invention adds the force of a magnetic field to the conventionally known plasma CVD method using microwaves, and uses the interaction between the electric field and the magnetic field of the microwaves.
しかし、Ｉ Ｘ １０−３〜Ｉ Ｘ １Ｏ−５ｔｏｒｒ
で有効なＥＣＲ（エレクトロンサイクロトロン共鳴）条
件を用いていない。However, I X 10-3 to I X 1O-5 torr
No effective ECR (electron cyclotron resonance) conditions were used.
以下に実施例を示し、さらに本発明を説明する。Examples will be shown below to further explain the present invention.
第１図に本発明にて用いた磁場印加可能なマイクロ波プ
ラズマＣＶＤ 装置を示す。FIG. 1 shows a microwave plasma CVD apparatus capable of applying a magnetic field used in the present invention.
同図において、この装置は減圧状態に保持可能なプラズ
マ発生空間（１）、物体に被膜形成する空間（３）、補
助空間（２）、磁場を発生する電磁石（５）、（５’）
およびその電源（２５） 、マイクロ波発振器（４）、
排気系を構成するターボ分子ポンプ（８）、ロータリー
ポンプ（１４）、圧力調整バルブ（１１）、筒状カラム
（１０°）。In the figure, this device includes a plasma generation space (1) that can be maintained in a reduced pressure state, a space for forming a film on an object (3), an auxiliary space (2), and electromagnets (5) and (5') that generate a magnetic field.
and its power source (25), microwave oscillator (4),
A turbo molecular pump (8), a rotary pump (14), a pressure adjustment valve (11), and a cylindrical column (10°) make up the exhaust system.
プラスチックス（１０）、マイクロ波導入窓（１５）
、ガス系（６） 、 （７） 、水冷系（１８） 、
（１８’）より構成されている。Plastics (10), microwave introduction window (15)
, gas system (6), (7), water cooling system (18),
(18').
まずプラスチックス部品（１０）例えば直径３〜１０ｍ
ｍ厚さ０．２〜２ｍｍの歯車、プラスチックネジ、プラ
スチック製ボタン、宝飾用物体例えばメガネの枠を筒状
カラム（１０’）内にゲート弁（２０）よりプラズマ発
生空間（１）に配設する。このカラムはマイクロ波およ
び磁場をできるだけ乱させないためステンレスまたは石
英製の筒状カラムを用いた。First, plastic parts (10), for example, 3 to 10 m in diameter.
A gear, a plastic screw, a plastic button, a jewelry object, such as a frame of glasses, with a thickness of 0.2 to 2 mm is placed in the plasma generation space (1) through the gate valve (20) in the cylindrical column (10'). do. A cylindrical column made of stainless steel or quartz was used for this column in order to minimize disturbance of microwave and magnetic fields.
このカラムは歯車を回転手段（１６）により回転（１７
）させている。この回転は１分間に０．１〜１０回のス
ピードとした。さらに図面では省略したが同時に１００
〜１０ＫＨｚの微振動を与え、それぞれのプラスチック
ス製物体を分散しやすくさせた。This column rotates the gear (17) by rotating means (16).
). This rotation was performed at a speed of 0.1 to 10 times per minute. Furthermore, although omitted in the drawing, at the same time 100
A slight vibration of ~10 KHz was applied to facilitate the dispersion of each plastic object.
作製工程として、まずこれら全体をターボ分子ポンプ（
８）、ロータリーポンプによりＩ Ｘ ＩＦ ６ｔｏｒ
ｒ以下に真空排気する。次に非生・酸物気体（分解反応
後固体を構成しない気体）例えばアルゴン、ヘリューム
または水素（６）を３０ＳＣＣ１’ｌガス系（７）を通
してプラズマ発生領域（１）に導入し、この圧力をｌ
ｘｉＱ−’ｔｏｒｒとする。外部より２．４５ＧＨｚの
周波数のマイクロ波を５００Ｗの強さで加える。磁場約
２にガウスを磁石（５） 、 （５“）より印加し、Ｅ
ＣＲ条件を満たした高密度プラズマをプラズマ発生空間
（１）にて発生させる。As part of the fabrication process, the entire structure was first assembled using a turbo molecular pump (
8), I X IF 6tor by rotary pump
Evacuate to below r. Next, a non-living acid gas (a gas that does not form a solid after decomposition reaction) such as argon, helium, or hydrogen (6) is introduced into the plasma generation region (1) through the 30SCC1'l gas system (7), and the pressure is increased. l
Let xiQ-'torr. Microwaves with a frequency of 2.45 GHz and a strength of 500 W are applied from the outside. A Gaussian magnetic field of about 2 is applied from magnets (5) and (5"), and E
High-density plasma that satisfies CR conditions is generated in a plasma generation space (1).
この高密度プラズマ領域より高エネルギを持つ非生成物
気体または電子がカラム（１０“）内を透過（２２）
Ｌ、カラム内のプラスチックス製部品（１０）の表面上
に到り、表面を清浄にする。次にこの非生成物気体を導
入しつつ、ガス系（７）より気体特に例えば生成物気体
（分解・反応後固体を構成する気体）例えば炭化物気体
（アセチレン（Ｃ２Ｈ２）、エチレン（Ｃ２Ｈ４）また
はメタン（ＣＨ４）等）を２００ＳＣＣＭの流量で導入
する。すると空間の圧力をすでに発生しているプラズマ
状態を保持しつつ０．Ｉ Ｘｌ０−’〜３ Ｘ １０”
ｔｏｒｒ好ましくは０．３〜３０ｔｏｒｒ例えば１０ｔ
ｏｒｒの圧力に変更させる。この空間の圧力を高くする
ことにより単位空間あたりの生成物気体の濃度を大きく
でき被膜成長速度を太き（できる。また同時に気体の廻
りごみを大きくすることができる。かくの如く一度低い
圧力でプラズマを発生させ、そのプラズマ状態を保持し
つつ生成物気体の活性濃度を大きくできる。そして高エ
ネルギに励起された炭素原子が生成され、カラム（１０
’）内の多数のプラスチックス製部品（１０）の表面に
この炭素が堆積し、ダイヤモンド又はｉ−カーボン膜が
形成される。Non-product gas or electrons with high energy pass through the column (10") from this high-density plasma region (22)
L, reach the surface of the plastic part (10) in the column and clean the surface. Next, while introducing this non-product gas, a gas such as a product gas (a gas constituting the solid after decomposition and reaction) such as a carbide gas (acetylene (C2H2), ethylene (C2H4) or methane) is introduced from the gas system (7). (CH4) etc.) at a flow rate of 200 SCCM. Then, the pressure in the space is reduced to 0.0 while maintaining the already generated plasma state. I Xl0-'~3 X 10"
torr preferably 0.3 to 30 torr, for example 10 t
Change the pressure to orr. By increasing the pressure in this space, the concentration of product gas per unit space can be increased, and the film growth rate can be increased.Also, at the same time, the amount of gas circulating around can be increased.In this way, once the pressure is low, It is possible to generate plasma and increase the active concentration of the product gas while maintaining the plasma state. Carbon atoms excited with high energy are generated and the column (10
This carbon is deposited on the surface of a number of plastic parts (10) in the casing (10), forming a diamond or i-carbon film.
第１図において、磁場は２つのリング状の磁石（５）
、 （５°）を用いたヘルムホルツコイル方式を採用し
た。さらに、４分割した空間（３０）に対し電場・磁場
の強度を調べた結果を第２図に示す。In Figure 1, the magnetic field is connected to two ring-shaped magnets (5).
, (5°) was adopted. Furthermore, FIG. 2 shows the results of examining the strength of the electric and magnetic fields for the space (30) divided into four parts.
第２図（Ａ）において、横軸（Ｘ軸）は空間（３０）の
横方向（反応性気体の流出方向）であり、縦軸（Ｒ軸）
は磁石の直径方向を示す。図面における曲線は磁場の等
磁位面を示す。そしてその線上に示されている数字は磁
石（５）が約２０００ガウスの時に得られる磁場の強さ
を示す。磁石（５）の強度を調整すると、電極・磁場の
相互作用を有する空間（８７５ガウス±１８５ガウス以
内）で、特に線（２６）が８７５ガウスとなる混成共鳴
条件を生ずる等（Ａ場面である。In FIG. 2 (A), the horizontal axis (X-axis) is the horizontal direction of the space (30) (outflow direction of reactive gas), and the vertical axis (R-axis)
indicates the diameter direction of the magnet. The curves in the drawings indicate equipotential surfaces of the magnetic field. The number shown on the line indicates the strength of the magnetic field obtained when the magnet (5) is about 2000 Gauss. When the strength of the magnet (5) is adjusted, a hybrid resonance condition is created in which the line (26) becomes 875 Gauss in a space (within 875 Gauss ± 185 Gauss) where the electrode/magnetic field interacts (Scene A). .
この共鳴条件を生ずる空間（１００）は第２図（Ｂ）に
示す如く、電場が最大となる領域となるようにしている
。第２図（Ｂ）の横軸は第２図（Ａ）と同じく反応性気
体の流れる方向を示し、紀軸は電場（電界強度）の強さ
を示す。The space (100) that produces this resonance condition is designed to be a region where the electric field is maximum, as shown in FIG. 2(B). The horizontal axis in FIG. 2(B) indicates the direction in which the reactive gas flows, as in FIG. 2(A), and the horizontal axis indicates the strength of the electric field (electric field strength).
第３図は第２図における基板（１０）の位置での円形空
間の磁場（八）および電場（Ｂ）の等磁場、等電場の図
面である。第３図（Ｂ）より明らかなごとく電場は最大
２５にν／ｍにまで達せしめ得ることがわかる。FIG. 3 is a drawing of the equal magnetic field and equal electric field of the magnetic field (8) and electric field (B) in the circular space at the position of the substrate (10) in FIG. 2. As is clear from FIG. 3(B), the electric field can reach a maximum of 25 v/m.
また比較のために同条件下で磁場を印加せずに３膜形成
を行った。その時基板上に形成された薄膜はグラファイ
ト膜であり、混成共鳴を発生させることがきわめて重要
であった。For comparison, three films were formed under the same conditions without applying a magnetic field. The thin film formed on the substrate at that time was a graphite film, and it was extremely important to generate hybrid resonance.
本実施例にて形成された薄膜の電子線回折像をとったと
ころ、アモルファス特有のハローパターンとともにダイ
ヤモンド（単結晶粒）のスポットがみられ、ｉ−カーボ
ン膜となっていた。さらにマイクロ波電力を上げて形成
してゆくに従い、ハローパターンが少しづつ消えてゆき
７００Ｗまたはそれ以上でダイヤモンド構造がより多く
混入した被封々となった。When an electron beam diffraction image of the thin film formed in this example was taken, diamond (single crystal grain) spots were observed along with a halo pattern peculiar to amorphous, indicating that the film was an i-carbon film. As the microwave power was further increased and the formation progressed, the halo pattern gradually disappeared, and at 700 W or more, the encapsulation became contaminated with more diamond structures.
本発明におけるプラスチック部品はダイヤモンドを一部
に含む炭素膜を１〜１０μの厚さにコーティングできる
。このため、このプラスチックスもダイヤモンドコート
がなされたものとしてイメージアップをさせて高付加価
値商品とすることができる。さらにプラスチック歯車上
に形成せしめると、表面の滑りやすさと耐摩耗性のため
軽くできるとともに、歯車同志がかみあわず、かつ摩耗
しない理想材料とすることができる。また球表面に形成
し、これを用いベアリング球とすると、軽くかつ廉価な
ベアリングとすることができる。The plastic parts of the present invention can be coated with a carbon film containing a portion of diamond to a thickness of 1 to 10 microns. Therefore, this plastic can be made into a high value-added product by improving its image as being diamond-coated. Furthermore, if it is formed on a plastic gear, it can be made lighter due to its slippery surface and wear resistance, and it can also be an ideal material that prevents the gears from meshing with each other and from wearing out. Furthermore, if it is formed on a spherical surface and used as a bearing ball, a light and inexpensive bearing can be obtained.
また、図面において気体は側より左方向に流れるように
した。しかし左側より右側方向であっても、上より下方
向であっても、また下より上方向であってもよい。これ
らは被膜形成がなされれば物体の大きさ、形状およびそ
の量により決められるべきである。Also, in the drawings, the gas was made to flow from the side to the left. However, it may be from the left side to the right side, from the top to the bottom, or from the bottom to the top. These should be determined by the size, shape and amount of the object to be coated.
本発明において、筒状カラムは円筒形としても角状（六
角または六角）としてもよい。角状にすると、回転に伴
いプラスチック物体を裏返すことができ、物体の全表面
にコーティングがしやすい。In the present invention, the cylindrical column may be cylindrical or square (hexagonal or hexagonal). The angular shape allows the plastic object to be turned over as it rotates, making it easier to coat the entire surface of the object.
第１図は本発明で用いる磁場・電場相互作用を用いたマ
イクロ波ＣＶＤ装置の概略を示す。
第２図はコンピュータシミュレイションによる磁場およ
び電場特性を示す。
第３図は電場・磁場相互作用をさせた位置での磁場およ
び電場の特性を示す。
１・・・・プラズマ発生空間
４・・・・マイクロ波発振器
５．５゛・・・外部磁場発生器
１０・・・・時計用部品
１０′ ・・・筒状カラム
２２・・・・ガス流FIG. 1 schematically shows a microwave CVD apparatus using magnetic field/electric field interaction used in the present invention. FIG. 2 shows the magnetic field and electric field characteristics by computer simulation. Figure 3 shows the characteristics of the magnetic field and electric field at a position where the electric field and magnetic field interact. 1... Plasma generation space 4... Microwave oscillator 5.5''... External magnetic field generator 10... Watch parts 10'... Cylindrical column 22... Gas flow
Claims (1)
素被膜を形成したことを特徴とする炭素膜がコーティン
グされたプラスチックス。 ２、特許請求の範囲第１項において、プラスチックスは
歯車状を有することを特徴とする炭素膜がコーティング
されたプラスチックス。 ３、特許請求の範囲第１項において、プラスチックスは
玩具であることを特徴とする炭素膜がコーティングされ
たプラスチックス。 ４、特許請求の範囲第１項において、プラスチックスは
ボタン形状または球状を有することを特徴とする炭素膜
がコーティングされたプラスチックス。 ５、特許請求の範囲第１項において、プラスチックスは
宝飾用物体であることを特徴とする炭素膜がコーティン
グされたプラスチックス。[Claims] 1. A plastic coated with a carbon film, characterized in that a carbon film containing diamond is formed on the surface of the plastic. 2. The plastic coated with a carbon film according to claim 1, wherein the plastic has a gear shape. 3. The plastic coated with a carbon film as set forth in claim 1, wherein the plastic is a toy. 4. The plastic coated with a carbon film according to claim 1, wherein the plastic has a button shape or a spherical shape. 5. The plastic coated with a carbon film according to claim 1, wherein the plastic is an object for jewelry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62000300A JPH0715147B2 (en) | 1987-01-05 | 1987-01-05 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62000300A JPH0715147B2 (en) | 1987-01-05 | 1987-01-05 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63169379A true JPS63169379A (en) | 1988-07-13 |
| JPH0715147B2 JPH0715147B2 (en) | 1995-02-22 |
Family
ID=11470049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62000300A Expired - Lifetime JPH0715147B2 (en) | 1987-01-05 | 1987-01-05 | Thin film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715147B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169387A (en) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
| JPH04165170A (en) * | 1990-06-29 | 1992-06-10 | Tokyo Yogyo Co Ltd | Faucet valve member |
| US6660342B1 (en) | 1990-09-25 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Pulsed electromagnetic energy method for forming a film |
| US6893720B1 (en) | 1997-06-27 | 2005-05-17 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195092A (en) * | 1984-03-15 | 1985-10-03 | Tdk Corp | Method and apparatus for production of carbon thin film |
| JPS62298A (en) * | 1985-06-25 | 1987-01-06 | Fuji Photo Film Co Ltd | Dry multi-layer analytical element |
| JPS62299A (en) * | 1985-06-25 | 1987-01-06 | Fuji Photo Film Co Ltd | Integrated multi-layer element for transaminase activity measurement |
| JPS63121667A (en) * | 1986-11-10 | 1988-05-25 | Semiconductor Energy Lab Co Ltd | Device and method for forming thin film |
| JPS63145782A (en) * | 1986-12-08 | 1988-06-17 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
-
1987
- 1987-01-05 JP JP62000300A patent/JPH0715147B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60195092A (en) * | 1984-03-15 | 1985-10-03 | Tdk Corp | Method and apparatus for production of carbon thin film |
| JPS62298A (en) * | 1985-06-25 | 1987-01-06 | Fuji Photo Film Co Ltd | Dry multi-layer analytical element |
| JPS62299A (en) * | 1985-06-25 | 1987-01-06 | Fuji Photo Film Co Ltd | Integrated multi-layer element for transaminase activity measurement |
| JPS63121667A (en) * | 1986-11-10 | 1988-05-25 | Semiconductor Energy Lab Co Ltd | Device and method for forming thin film |
| JPS63145782A (en) * | 1986-12-08 | 1988-06-17 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63169387A (en) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | Formation of thin film |
| JPH04165170A (en) * | 1990-06-29 | 1992-06-10 | Tokyo Yogyo Co Ltd | Faucet valve member |
| US6660342B1 (en) | 1990-09-25 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Pulsed electromagnetic energy method for forming a film |
| US7125588B2 (en) | 1990-09-25 | 2006-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Pulsed plasma CVD method for forming a film |
| US6893720B1 (en) | 1997-06-27 | 2005-05-17 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0715147B2 (en) | 1995-02-22 |
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