JP2634264B2 - Diamond-like carbon film and method for producing the same - Google Patents
Diamond-like carbon film and method for producing the sameInfo
- Publication number
- JP2634264B2 JP2634264B2 JP31343889A JP31343889A JP2634264B2 JP 2634264 B2 JP2634264 B2 JP 2634264B2 JP 31343889 A JP31343889 A JP 31343889A JP 31343889 A JP31343889 A JP 31343889A JP 2634264 B2 JP2634264 B2 JP 2634264B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- magnetic field
- carbon film
- microwave
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマCVDによるダイヤモンド状炭素膜
及びその製造法に関する。Description: TECHNICAL FIELD The present invention relates to a diamond-like carbon film formed by plasma CVD and a method for producing the same.
ダイヤモンド薄膜あるいはダイヤモンド状炭素膜を生
成する方法として。プラズマCVD法が良く知られてお
り、そのなかでも磁場を印加した状態でマイクロ波によ
りプラズマを生成する方法は高い効率でダイヤモンドが
生成すると報告されている（特開昭61−36200号公
報）。As a method of forming a diamond thin film or a diamond-like carbon film. The plasma CVD method is well known, and among them, it is reported that a method of generating plasma by microwaves while applying a magnetic field generates diamond with high efficiency (Japanese Patent Application Laid-Open No. 61-36200).
また、H.Kawaradaや、Jpn.J.Appl.Phys 26（1987）10
32ではECR条件を満たす875Gaussの環境条件下に設置し
た基板上に良好なダイヤモンド粒あるいは膜が生成する
と報告されている。H.Kawarada and Jpn.J.Appl.Phys 26 (1987) 10
No. 32 reports that good diamond grains or films are formed on a substrate placed under an environmental condition of 875 Gauss satisfying the ECR condition.
しかしながら、上記従来例では、結晶性の高いダイヤ
モンドが生成するものの、多結晶体あるいはそれに近い
構造のため、膜全体としてみたときの表面はごつごつし
ており、平坦性に欠けるという欠点があった。これはダ
イヤモンド薄膜の応用を考えたとき大きな障害となって
しまう。例えば、ダイヤモンド薄膜の上に他物質を積み
重ねるとき、電気的に均一に蒸着することが不可能とな
り、また表面の凹凸のために散乱が大きく、無色透明と
ならない。またダイヤモンドは非常に硬くシリコンのよ
うな研磨加工が難しい。However, in the above-mentioned conventional example, although diamond having high crystallinity is formed, the surface of the film as a whole is rough and lacks flatness due to a polycrystalline structure or a structure similar thereto. This is a major obstacle when considering the application of diamond thin films. For example, when another substance is stacked on a diamond thin film, it becomes impossible to electrically vapor-deposit uniformly, and scattering is large due to unevenness of the surface, and the film is not colorless and transparent. Also, diamond is very hard and difficult to grind like silicon.
更に単純にメタン濃度を高くすることによりアモルフ
ァス成分を増加させ平坦性を上げることもできるが、そ
のアモルファス成分の性質がグラファイトライクな状態
では電気伝導度、可視光の吸収率の増加を招いてしまい
好ましくない。It is also possible to increase the amorphous component by simply increasing the methane concentration to increase the flatness, but the nature of the amorphous component increases the electrical conductivity and the absorptivity of visible light in a graphite-like state. Not preferred.
本発明は電子サイクロトロン共鳴CVD装置の磁場強度
およびその位置を調節することにより、ダイヤモンドよ
りは凹凸が少なく、かつ高抵抗で可視光領域の吸光度の
小さなダイヤモンド状炭素膜及びその製造法を提供する
ことを目的とする。An object of the present invention is to provide a diamond-like carbon film having less irregularities than diamond, high resistance, and low absorbance in the visible light region by adjusting the magnetic field strength and the position of the electron cyclotron resonance CVD apparatus, and a method for producing the same. With the goal.
本発明は、上記課題に鑑みなされたもので、磁場が印
加された真空下で、分子内に炭素原子を持つ原料ガスに
マイクロ波を照射させることによって、該原料ガスの分
解成分を含有したプラズマを発生させ、該分解成分を堆
積させて得たダイヤモンド状炭素膜であって、該ダイヤ
モンド状炭素膜がRMS500Å以下の表面粗さ、10-9〜10
-11（Ωcm）-1の電気伝導度及び2.4〜3.5eVの光学バン
ドギャップを有することを特徴とするダイヤモンド状炭
素膜であり、磁場を印加した真空チャンバー内に、分子
内に炭素原子を持つ原料ガスとマイクロ波を導入し、プ
ラズマを発生させてダイヤモンド状炭素膜を生成する製
造法において、真空チャンバー内の磁場分布が基板近傍
に最大強度を有し、且つマイクロ波導入窓位置でECR条
件を満たす磁場強度以上を持つ磁場分布であることを特
徴としたダイヤモンド状炭素膜の製造法である。The present invention has been made in view of the above problems, and a plasma containing a decomposition component of a source gas is obtained by irradiating a microwave to a source gas having a carbon atom in a molecule under vacuum to which a magnetic field is applied. A diamond-like carbon film obtained by depositing the decomposition component, wherein the diamond-like carbon film has a surface roughness of RMS 500 ° or less, 10 -9 to 10
A diamond-like carbon film characterized by having an electrical conductivity of -11 (Ωcm) -1 and an optical band gap of 2.4 to 3.5 eV, with carbon atoms in the molecule in a vacuum chamber to which a magnetic field is applied In a manufacturing method in which a source gas and a microwave are introduced to generate a plasma by generating a plasma, a magnetic field distribution in a vacuum chamber has a maximum intensity near a substrate, and an ECR condition at a microwave introduction window position. A method for producing a diamond-like carbon film, characterized by having a magnetic field distribution having a magnetic field strength that satisfies the following.
本発明の方法によれば、電気伝導度、可視光の吸収率
を増加させることなく、膜表面の平坦性を向上できるも
のである。According to the method of the present invention, the flatness of the film surface can be improved without increasing the electric conductivity and the absorptivity of visible light.
以下、本発明を詳細に説明する。 Hereinafter, the present invention will be described in detail.
第１図は本発明に使用可能なプラズマCVD装置の一例
を示す概略図、および該装置内の磁場強度分布を示す図
である。FIG. 1 is a schematic diagram showing an example of a plasma CVD apparatus that can be used in the present invention, and a diagram showing a magnetic field intensity distribution in the apparatus.
同図において、電磁石２を配して真空チャンバー１内
にガス導入口４からガスを、マイクロ波導波管３からマ
イクロ波を導入し、チャンバー内にプラズマを発生させ
基板６上にダイヤモンド状炭素膜を生成させる。この
時、磁場分布を第１図（ｂ）に示すように、最大磁場が
基板位置に、マイクロ波導入窓５の位置で1300Gaussと
なるように電磁石２により調整する。最大磁場の強度は
大きいほど良く、用いるマイクロ波の共鳴磁場より300G
auss以上大きいことが好ましい。In the figure, an electromagnet 2 is disposed, a gas is introduced into a vacuum chamber 1 from a gas inlet 4 and a microwave is introduced from a microwave waveguide 3 to generate plasma in the chamber, and a diamond-like carbon film is formed on a substrate 6. Is generated. At this time, the electromagnet 2 adjusts the magnetic field distribution so that the maximum magnetic field is at the substrate position and 1300 Gauss at the position of the microwave introduction window 5 as shown in FIG. The higher the maximum magnetic field strength, the better, and 300G higher than the resonance magnetic field of the microwave used.
It is preferably larger than auss.
この際、最大磁場の位置は基板前後100mm以内が好ま
しい。At this time, the position of the maximum magnetic field is preferably within 100 mm before and after the substrate.
最大磁場がマイクロ波導入窓位置にある単純な発散磁
界では、磁力線方向に沿ったプラズマの流れが強く、基
板表面に到達するプラズマ密度が増加するものの、イオ
ンによる膜のエッチングや、過度のボンバード効果によ
り、膜生成速度が低下したり、グラファイト状成分など
の好ましくない成分が混入しやすい。また、マイクロ波
導入窓位置の磁場強度がECR上面を満たす磁場強度以下
になるとマイクロ波の反射電力が大きくなり、真空チャ
ンバー内での実質的なマイクロ波の投入電力が低下し、
かつ放電がマイクロ波導入窓近傍にのみ生じて、十分な
成膜速度が得られず好ましくない。In a simple divergent magnetic field where the maximum magnetic field is at the position of the microwave introduction window, the plasma flow along the direction of the magnetic field is strong and the plasma density reaching the substrate surface increases, but the film etching by ions and the excessive bombard effect As a result, the film formation rate is reduced, and undesired components such as graphite components are likely to be mixed. Also, when the magnetic field intensity at the position of the microwave introduction window becomes equal to or less than the magnetic field intensity that satisfies the upper surface of the ECR, the reflected power of the microwave increases, and the substantial input power of the microwave in the vacuum chamber decreases,
In addition, discharge occurs only in the vicinity of the microwave introduction window, and a sufficient film forming rate cannot be obtained, which is not preferable.
本発明では、基板近傍で最大磁場となるように磁場強
度を調整することにより、磁力線方向に沿ったプラズマ
の流れはそれほど強くなく、発生するプラズマを基板近
傍にのみ極在化でき、それにより、プラズマ中の活性種
の濃度が基板近傍で最も高くなり、大きな成膜速度を得
ることができる。In the present invention, by adjusting the magnetic field strength so as to have a maximum magnetic field near the substrate, the flow of the plasma along the direction of the magnetic field is not so strong, and the generated plasma can be poled only near the substrate. The concentration of the active species in the plasma becomes highest near the substrate, and a high deposition rate can be obtained.
本発明では、使用するマイクロ波の周波数に限定はな
いが、磁場強度、電源の汎用性から後述する本発明の実
施例では2,45GHzを使用した。また、マイクロ波導波管
としては、円形導波管、矩形導波管のいずれもが使用可
能であるが、マイクロ波電力の投入効率、放電分布を考
慮すると、円筒状チャンバーと同形の円形導波管が好ま
しく使用できる。In the present invention, the frequency of the microwave to be used is not limited. However, in the embodiment of the present invention described later, 2,45 GHz is used from the viewpoint of the magnetic field strength and the versatility of the power supply. Either a circular waveguide or a rectangular waveguide can be used as the microwave waveguide, but in consideration of microwave power input efficiency and discharge distribution, a circular waveguide having the same shape as the cylindrical chamber is used. Tubes are preferably used.
本発明において、原料ガスとしては、含炭素ガスが用
いられ、例えば、メタン、エタン、プロパン、エチレ
ン、ベンゼン、アセチレンなどの炭化水素、四フッ化炭
素、塩化メチレン、四塩化炭素、クロロホルム、トリク
ロロエタンなどのハロゲン化炭素、CO2、COなどのガス
が挙げられ、またN2、H2、O2、H2O、不活性ガスなどを
混入して用いることもできる。In the present invention, a carbon-containing gas is used as a raw material gas, for example, hydrocarbons such as methane, ethane, propane, ethylene, benzene, and acetylene, carbon tetrafluoride, methylene chloride, carbon tetrachloride, chloroform, trichloroethane, and the like. Gas such as halogenated carbon, CO 2 , CO, etc., and N 2 , H 2 , O 2 , H 2 O, an inert gas or the like may be mixed and used.
基板温度としては1000℃以下が好ましく、それ以上で
はグラファイト化してしまい好ましくない。The substrate temperature is preferably 1000 ° C. or lower, and if it is higher than that, graphite is not preferable.
成膜時の真空チャンバー内の圧力は、高すぎるとプラ
ズマに対する磁場の効果が小さく、また低すぎると十分
な成膜速度が得られないために、好ましくは１×10-2〜
100Torr、更に好ましくは１×10-1〜50Torrの圧力が良
い。The pressure in the vacuum chamber during the film formation, in order to effect a too high magnetic field to the plasma is small, nor too low a sufficient deposition rate can be obtained, preferably 1 × 10 -2 ~
The pressure is preferably 100 Torr, more preferably 1 × 10 -1 to 50 Torr.
以下、実施例により本発明を具体的に説明する。 Hereinafter, the present invention will be described specifically with reference to examples.
実施例１〜３、比較例１〜２ 第１図に示す装置を用いて基板上に炭素膜を生成させ
た。原料ガスとしてメタンガスと水素を1:19で流し、マ
イクロ波（2.45GHz）は導波管３からマイクロ波電力900
Wで導入した。また、基板はSiまたは石英基板を使用し
た。その他の生成条件としては第１表に示す条件でダイ
ヤモンド状炭素膜の生成を行なった。成膜結果をあわせ
て第１表に示す。Examples 1 to 3 and Comparative Examples 1 and 2 A carbon film was formed on a substrate using the apparatus shown in FIG. Methane gas and hydrogen flow at 1:19 as raw material gas, and microwave (2.45 GHz)
Introduced in W. The substrate used was a Si or quartz substrate. Other formation conditions were such that a diamond-like carbon film was formed under the conditions shown in Table 1. Table 1 shows the results of the film formation.
実施例４ 第１図に示す装置を用いて基板上にダイヤモンド状炭
素膜を生成させた。原料ガスとしてメタンガス：窒素：
酸素を1:8:1で流し、マイクロ波（2.45GHz）は導波管３
からマイクロ波電力900Wで導入した。磁場は最大2000Ga
uss、最大磁場位置−基板間距離を0mm、マイクロ波導入
窓位置の切場強度を1500Gauss、圧力を5Torr、基板温度
を500℃とした。膜の成膜速度は0.5μm/hrであった。得
られたダイヤモンド状炭素膜は電子線回折の結果、結晶
性が見られダイヤモンド微結晶を含むことが確認され
た。表面粗さはRMS500Å、電気伝導度は１×10-10（Ωc
m）-1、光学バンドギャップは3.2eVであった。生成条件
および結果を第１表に示す。Example 4 A diamond-like carbon film was formed on a substrate using the apparatus shown in FIG. Methane gas: Nitrogen:
Oxygen is flowed at 1: 8: 1, and microwave (2.45 GHz) is passed through waveguide 3
From 900W microwave power. Magnetic field up to 2000Ga
uss, the maximum magnetic field position-substrate distance was 0 mm, the cutting field strength at the microwave introduction window position was 1500 Gauss, the pressure was 5 Torr, and the substrate temperature was 500 ° C. The film formation rate was 0.5 μm / hr. As a result of electron beam diffraction, the obtained diamond-like carbon film was found to have crystallinity and to contain diamond microcrystals. Surface roughness is RMS500Å, electrical conductivity is 1 × 10 -10 (Ωc
m) -1 , the optical band gap was 3.2 eV. Table 1 shows the production conditions and results.
実施例５〜６ 第１図に示す装置を用いて基板上にダイヤモンド状炭
素膜を生成させた。原料ガスとしてベンゼン：水素を1:
20で流し、マイクロ波（2.45GHz）は導波管３からマイ
クロ波電力900Wで導入した。その他の生成条件としては
第１表に示す条件で行なった。成膜結果をあわせて第１
表に示す。Examples 5 to 6 A diamond-like carbon film was formed on a substrate using the apparatus shown in FIG. Benzene: hydrogen 1: as raw material gas
Microwave (2.45 GHz) was introduced from waveguide 3 with microwave power of 900 W. Other production conditions were as shown in Table 1. First according to the film formation result
It is shown in the table.
実施例７〜８、比較例３ 第１図に示す装置を用いて基板上に炭素膜を生成させ
た。原料ガスとしてCO:Arを1:1で流し、マイクロ波（2.
45GHz）は導波管３からマイクロ波電力500Wで導入し
た。その他の生成条件としては第１表に示す条件で行な
った。成膜結果をあわせて第１表に示す。Examples 7 and 8, Comparative Example 3 A carbon film was formed on a substrate using the apparatus shown in FIG. CO: Ar is flowed at 1: 1 as source gas, and microwave (2.
45 GHz) was introduced from the waveguide 3 with a microwave power of 500 W. Other production conditions were as shown in Table 1. Table 1 shows the results of the film formation.
第１表において、実施例１、２と比較例１との対比か
ら明らかなように、磁場分布が基板近傍に最大強度を有
する実施例の場合は、得られたダイヤモンド状炭素膜の
表面粗さおよび光学バンドギャップともに満足すべき値
を示したが、マイクロ波導入窓位置に最大強度を有する
比較列の場合は、これらの値が著しく悪かった。また、
比較例２の場合は、マイクロ波導入窓位置での磁場強度
がECR条件を満たすには不十分であるため、実施例３の
場合と異なり、得られる炭素膜はグラファイト状であ
り、その電気伝導度も大となり好ましくなかった。As is clear from the comparison between Examples 1 and 2 and Comparative Example 1 in Table 1, in the case of the example in which the magnetic field distribution has the maximum intensity near the substrate, the surface roughness of the obtained diamond-like carbon film is shown. And the optical band gap showed satisfactory values. However, in the case of the comparative row having the maximum intensity at the position of the microwave introduction window, these values were extremely poor. Also,
In the case of Comparative Example 2, since the magnetic field intensity at the position of the microwave introduction window was insufficient to satisfy the ECR condition, the carbon film obtained was different from the case of Example 3 in the form of graphite. The degree was too large, which was not desirable.
同様なことが、実施例７、８と比較例３との対比から
も明らかである。The same is apparent from comparison between Examples 7 and 8 and Comparative Example 3.
実施例４〜６は、成膜条件を本発明の範囲内で変えた
場合の結果であるが、いずれも満足すべき物性値のダイ
ヤモンド状炭素膜が得られた。Examples 4 to 6 are the results when the film forming conditions were changed within the range of the present invention. In all cases, diamond-like carbon films having satisfactory physical properties were obtained.
また第１表からもわかるように、本発明の方法によれ
ば、成膜された膜にはダイヤモンド微結晶が含まれてお
り、更にこれらの微結晶同士を結合している部分がアモ
ルファスとなっているために、表面粗さが従来の方法に
よるダイヤモンド多結晶よりも１桁低い数百Åのダイヤ
モンド状炭素膜を得ることができる。そして、電子線回
折の結果よりアモルファス部分にはグラファイト構造が
存在しないことが確認された。Also, as can be seen from Table 1, according to the method of the present invention, the formed film contains diamond microcrystals, and the portion connecting these microcrystals becomes amorphous. Therefore, it is possible to obtain a diamond-like carbon film having a surface roughness of several hundred square meters lower than that of the conventional polycrystalline diamond by one digit. From the result of electron beam diffraction, it was confirmed that no graphite structure was present in the amorphous portion.
更に本発明の方法により得られたダイヤモンド状炭素
膜の特性は、電気伝導度が10-9〜10-11（Ωcm）-1、光
学バンドギャップが2.4〜3.5eVの値を示した。これらの
値はグラファイトの示す値（電気伝導度:1〜Ω-1cm-1、
光学バンドギャップ：〜０）よりもダイヤモンドの示す
値（電気伝導度:10-15〜Ω-1cm-1、光学バンドギャッ
プ：〜5.4eV）により近い優れたものであった。Furthermore, the characteristics of the diamond-like carbon film obtained by the method of the present invention showed values of electric conductivity of 10 −9 to 10 −11 (Ωcm) −1 and an optical band gap of 2.4 to 3.5 eV. These values are those of graphite (electric conductivity: 1 to Ω -1 cm -1 ,
It was closer to the value (electric conductivity: 10 −15 to Ω −1 cm −1 , optical band gap: ギ ャ ッ プ 5.4 eV) of diamond than the optical band gap: ０0.
本発明で得られるダイヤモンド状炭素膜は、微結晶ダ
イヤモンドを膜中に含有するものであれば良く、例え
ば、微結晶ダイヤモンドを多量に含有する、ダイヤモン
ド膜の物性に非常に近い物性を示す膜まで含まれる。The diamond-like carbon film obtained in the present invention may be any one containing microcrystalline diamond in the film, for example, containing a large amount of microcrystalline diamond, up to a film showing physical properties very close to those of a diamond film. included.
〔発明の効果〕 以上説明したように、真空チャンバー内磁場分布が基
板近傍に最大強度を有し、かつマイクロ波導入窓位置で
ECR条件を満たす磁場強度以上を持つ磁場分布とするこ
とにより、結晶形が小さく、電気特性、光学特性の低下
しない平坦性の良いダイヤモンド状炭素膜を生成するこ
とが可能となった。更に真空チャンバー内壁に到達する
活性種の濃度が減少するために、チャンバー内壁の汚れ
が少なくなるという効果もある。 [Effects of the Invention] As described above, the magnetic field distribution in the vacuum chamber has the maximum intensity near the substrate, and at the position of the microwave introduction window.
By setting the magnetic field distribution to have a magnetic field strength equal to or higher than the ECR condition, it was possible to produce a diamond-like carbon film having a small crystal form and good flatness without deteriorating the electrical and optical characteristics. Further, since the concentration of the active species reaching the inner wall of the vacuum chamber is reduced, there is also an effect that dirt on the inner wall of the chamber is reduced.
第１図は本発明に使用可能な装置の概略図、および該装
置の真空チャンバー内の磁場分布を示す図である。 １……真空チャンバー、２……電磁石 ３……マイクロ波導波管、４……ガス導入口 ５……マイクロ波導入窓、６……基板FIG. 1 is a schematic diagram of an apparatus that can be used in the present invention, and a diagram showing a magnetic field distribution in a vacuum chamber of the apparatus. DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 2 ... Electromagnet 3 ... Microwave waveguide 4, ... Gas introduction port 5 ... Microwave introduction window, 6 ... Substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 谷口 靖 東京都大田区下丸子３丁目30番２号 キ ヤノン株式会社内 (56)参考文献 特開 昭62−96397（ＪＰ，Ａ) 特開 平２−9787（ＪＰ，Ａ) 特開 平３−17274（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Yasushi Yasushi 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (56) References JP-A-62-96397 (JP, A) JP-A-2 -9787 (JP, A) JP-A-3-17274 (JP, A)
Claims (2)
原子を持つ原料ガスにマイクロ波を照射させることによ
って、該原料ガスの分解成分を含有したプラズマを発生
させ、該分解成分を堆積させて得たダイヤモンド状炭素
膜であって、該ダイヤモンド状炭素膜がRMS500Å以下の
表面粗さ、10-9〜10-11（Ωcm）-1の電気伝導度及び2.4
〜3.5eVの光学バンドギャップを有することを特徴とす
るダイヤモンド状炭素膜。1. A microwave containing a decomposition component of a source gas is generated by irradiating a microwave to a source gas having a carbon atom in a molecule under a vacuum to which a magnetic field is applied, and generating a plasma containing a decomposition component of the source gas. A diamond-like carbon film obtained by deposition, wherein the diamond-like carbon film has a surface roughness of RMS 500 ° or less, an electric conductivity of 10 −9 to 10 −11 (Ωcm) −1 ,
A diamond-like carbon film having an optical band gap of 3.5 eV.
内に炭素原子を持つ原料ガスとマイクロ波を導入し、プ
ラズマを発生させてダイヤモンド状炭素膜を生成する製
造法において、真空チャンバー内の磁場分布が基板近傍
に最大強度を有し、且つマイクロ波導入窓位置でECR条
件を満たす磁場強度以上を持つ磁場分布であることを特
徴としたダイヤモンド状炭素膜の製造法。2. A method for producing a diamond-like carbon film by introducing a source gas having a carbon atom in a molecule and a microwave into a vacuum chamber to which a magnetic field is applied, and generating a plasma in the vacuum chamber. A method for producing a diamond-like carbon film, characterized in that the magnetic field distribution has a maximum intensity near the substrate and a magnetic field distribution at or above the microwave introduction window position that satisfies the ECR condition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31343889A JP2634264B2 (en) | 1989-12-04 | 1989-12-04 | Diamond-like carbon film and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31343889A JP2634264B2 (en) | 1989-12-04 | 1989-12-04 | Diamond-like carbon film and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03177399A JPH03177399A (en) | 1991-08-01 |
| JP2634264B2 true JP2634264B2 (en) | 1997-07-23 |
Family
ID=18041299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31343889A Expired - Fee Related JP2634264B2 (en) | 1989-12-04 | 1989-12-04 | Diamond-like carbon film and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2634264B2 (en) |
-
1989
- 1989-12-04 JP JP31343889A patent/JP2634264B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03177399A (en) | 1991-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5607560A (en) | Diamond crystal forming method | |
| Deshpandey et al. | Diamond and diamondlike films: Deposition processes and properties | |
| US5236545A (en) | Method for heteroepitaxial diamond film development | |
| US4869923A (en) | Microwave enhanced CVD method for depositing carbon | |
| US5330802A (en) | Plasma CVD of carbonaceous films on substrate having reduced metal on its surface | |
| JP3728465B2 (en) | Method for forming single crystal diamond film | |
| US20040115365A1 (en) | Method for forming a film | |
| US6077572A (en) | Method of coating edges with diamond-like carbon | |
| KR930003605B1 (en) | Microwave enhanced cvd method for coating plastic articles with carbon films and its products | |
| US5110405A (en) | Method of manufacturing single-crystal diamond particles | |
| US5183685A (en) | Diamond film deposition by ECR CVD using a catalyst gas | |
| EP0846792B1 (en) | Method of synthesizing diamond | |
| JP2634264B2 (en) | Diamond-like carbon film and method for producing the same | |
| GB2240114A (en) | Film nucleation process for growing diamond film | |
| Murata et al. | Inductively coupled radio frequency plasma chemical vapor deposition using a ladder‐shaped antenna | |
| US5270029A (en) | Carbon substance and its manufacturing method | |
| JP2564895B2 (en) | Plasma processing device | |
| JPH0471034B2 (en) | ||
| JPS63145782A (en) | Formation of thin film | |
| JPH04354873A (en) | Hard carbon film | |
| JPH0769792A (en) | Method for epitaxial growth of diamond crystal and method for selective epitacial growth | |
| JPH01104777A (en) | Formation of deposit film | |
| JPS62171995A (en) | Production of diamond | |
| JPH03177398A (en) | Synthesis of diamond by vapor phase method | |
| JPH07118093A (en) | Method for forming diamond crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |