JPS6316408A - Formation of film for thin film magnetic head - Google Patents
Formation of film for thin film magnetic headInfo
- Publication number
- JPS6316408A JPS6316408A JP15964186A JP15964186A JPS6316408A JP S6316408 A JPS6316408 A JP S6316408A JP 15964186 A JP15964186 A JP 15964186A JP 15964186 A JP15964186 A JP 15964186A JP S6316408 A JPS6316408 A JP S6316408A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pure water
- anions
- deterioration
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 title claims description 43
- 239000010409 thin film Substances 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 150000001450 anions Chemical class 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000003463 adsorbent Substances 0.000 claims 1
- 230000000274 adsorptive effect Effects 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 9
- 230000001681 protective effect Effects 0.000 abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052593 corundum Inorganic materials 0.000 abstract 5
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 5
- 239000000463 material Substances 0.000 abstract 3
- 229910017251 AsO4 Inorganic materials 0.000 abstract 1
- 101100283604 Caenorhabditis elegans pigk-1 gene Proteins 0.000 abstract 1
- 229910015667 MoO4 Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 10
- 239000012528 membrane Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、薄膜磁気ヘッドを構成する酸化アルミニウム
（アルミナ、以下ＡＱｚＯｓと略す）膜の洗浄方法に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for cleaning an aluminum oxide (alumina, hereinafter abbreviated as AQzOs) film constituting a thin film magnetic head.
第１図には、薄膜磁気ヘッドの断面図を示す。 FIG. 1 shows a sectional view of a thin film magnetic head.
セラミック基板１上に、下地ＡｕｚＯａ膜２．下部磁性
膜３．磁気ギャップ用Ａ Ｑ ｚＯａ膜４．有機絶縁膜
５．導体コイル６、上部磁性膜７．第一保護ＡＩＡｚＯ
ｓ膜８及び第二保護Ａ Ｑ ｔｏ ｓ膜９を次々に積層
して、素子が得られる。このうち、ＡＱｘ○８膜は１通
常、スパッタリング法を用いて形成される。A base AuzOa film 2. is formed on the ceramic substrate 1. Lower magnetic film 3. A Q zOa film for magnetic gap4. Organic insulating film 5. Conductor coil 6, upper magnetic film 7. First protection AIAzO
An element is obtained by laminating the s film 8 and the second protective A Q to s film 9 one after another. Among these, the AQx○8 film is usually formed using a sputtering method.
これらの皮膜を形成する前には必ず洗浄が行なわれるが
、基板の汚染を防ぐために、洗浄液には高い清浄度が要
求され、通常の場合純水を用いることが望ましい、実際
の薄膜磁気ヘッドの作製工程においても、各工程ごとに
純水洗浄が行なわれ、基板上のゴミや異物の除去に役立
っている。Cleaning is always performed before forming these films, but in order to prevent contamination of the substrate, a high degree of cleanliness is required of the cleaning solution, and it is usually preferable to use pure water. Even in the manufacturing process, pure water cleaning is performed after each step, which helps remove dust and foreign matter from the substrate.
ところが、基板上に薄膜磁気ヘッド素子を形成した後、
切断、研磨加工を施したところ、第一保護ＡＱｚＯ８膜
８と第二保護Ａ １２２０３膜９の界面で剥離を生じや
すいことがわかった。そこで、第一保護ＡｆｌｚＯｓ膜
８を形成した後、第二保護ＡＱｚＯｇ膜９をスパッタリ
ングするまでの間の各工程（エツチング、洗浄等）につ
いて詳細に検討した結果、純水による洗浄によって、第
一保護ＡＱｘＯｓ膜８の表面の密着力が劣化しているこ
とがわかった。However, after forming a thin film magnetic head element on a substrate,
When cutting and polishing were performed, it was found that peeling easily occurred at the interface between the first protective AQzO8 film 8 and the second protective A12203 film 9. Therefore, as a result of a detailed study of each process (etching, cleaning, etc.) after forming the first protective AflzOs film 8 until sputtering the second protective AQzOg film 9, we found that the first protective AQzOg film 8 was It was found that the adhesion of the surface of the AQxOs film 8 had deteriorated.
この様な、スパッタＡＱｚＯｓ膜の水もしくは水蒸気に
よる変質については、ソリッド・ステート・テクノロジ
ー（日本版）、１９８１年１月号。For information on the deterioration of sputtered AQzOs films due to water or water vapor, see Solid State Technology (Japanese Edition), January 1981 issue.
第５６頁や、ジャーナル・オブ・バキューム・サイエン
ス・アンド・テクノロジー、１９７７年１４巻５号、第
１１４０頁（Ｊ、Ｖａｅ、Ｓｃｉ、Ｔｅｃｈｎｏｌ、
。56, Journal of Vacuum Science and Technology, 1977, Vol. 14, No. 5, p. 1140 (J, Vae, Sci, Technol,
.
Ｖｏｌｌ ４ 、 Ｎ（１５、１９７７、ｐＨ４０）等
に述べられており、一般に、ＡＱｘＯｓ膜が水和してい
るものと考えられている。Vol. 4, N. (15, 1977, pH 40), etc., and it is generally considered that the AQxOs film is hydrated.
この変質を防ぐための手法として、スパッタリング用の
Ａｒガスに１〜１０％の酸素を加える方法が考案された
が、効果は十分ではなく、やはりＡＱｚＯｓ膜の剥離を
生じることがわかった。As a method to prevent this deterioration, a method of adding 1 to 10% oxygen to Ar gas for sputtering was devised, but it was found that the effect was not sufficient and the AQzOs film still peeled off.
また、変質を抑制するために、純水とＡｕｚｏｓ膜が接
触する時間を短くしたり、純水の温度を下げる方法も試
みられたが、充分な洗浄効果が得られなかった。In addition, attempts have been made to shorten the contact time between the pure water and the Auzos membrane and to lower the temperature of the pure water in order to suppress deterioration, but a sufficient cleaning effect has not been obtained.
本発明の目的は、薄膜磁気ヘッドを構成するＡΩ２０８
膜を、純水を用いて充分に洗浄する方法を提供すること
にある。The object of the present invention is to
An object of the present invention is to provide a method for thoroughly washing a membrane using pure water.
上記目的は、洗浄に用いる純水中に、ＡＱ２０ｇ膜の変
質を抑制する微量の物質を添加することにより、達成さ
れる。この抑制物質は、通常、陰イオンの形で純水中に
存在するものである。また、その量は、通常０．０１ｍ
ｏｌ／Ｉｌｌ以下の微量で充分であり、量が多くなると
かえってＡｎｚＯδ膜を容解したりする副作用が現れる
こともある。The above object is achieved by adding a trace amount of a substance that suppresses deterioration of the AQ20g membrane to the pure water used for cleaning. This inhibitor is usually present in pure water in the form of anions. Also, the amount is usually 0.01m
A trace amount of less than ol/Ill is sufficient, and if the amount is too large, side effects such as dissolving the AnzOδ film may appear.
上記抑制物質の例は、Ｐ ０４”−、ＨＰ ０４２−。Examples of the above-mentioned inhibitory substances are P 04''-, HP 042-.
ＨｚＰ ０４−、 ＣｒＯ４”−、ＨＣｒＯ４−、Ｃ
ｒｚ○７２−９ＨＣｒｚＯ７−＋ Ｍｏ○ａ２−、
ＨＭｏ○４− 、 Ｗ Ｏ４”−。HzP 04-, CrO4"-, HCrO4-, C
rz○72-9HCrzO7-+ Mo○a2-,
HMo○4-, WO4"-.
ＨＷＯ４−、Ａｓ１４δ−、ＨＡｓＯ４２Ｌ−、Ｈ２Ａ
ＳＯ４−等の陰イオンがあげられる。HWO4-, As14δ-, HAsO42L-, H2A
Examples include anions such as SO4-.
上記物質の添加によってＡＱ２０ｓ膜の変質が抑えられ
る機構について検討したところ、添加による純水のｐＨ
値変化は関係ないこと、及びＡＱ＊Ｏｓ膜の表面に添加
陰イオンが吸着されていることがわかった。このことか
ら１表面に吸着した陰イオンが、ＡＱｘＯｓ膜に対する
水分子の侵入を防ぎ、膜の変質を抑制しているものと考
えられる。When we investigated the mechanism by which the alteration of the AQ20s membrane is suppressed by the addition of the above substances, we found that the pH of pure water due to the addition
It was found that the value change was unrelated and that the added anions were adsorbed on the surface of the AQ*Os film. From this, it is considered that the anions adsorbed on the surface of AQxOs prevent water molecules from entering the AQxOs film and suppress deterioration of the film.
以下、本発明の一実施例を第２図、第３図及び第４図に
より説明する６第２図は、ガラス基板上にＡｕ２０ｇ膜
をスパッタリングした後、室温の純水及び加熱した純水
、及び加熱した純水にＰＯａ ’″″を０．００１モル
／ａ添加した液の各々に三十分間浸漬し、その上にさら
にＡＱｘＯｓ膜をスパッタリングした試料に対して剥離
試験を行なった結果を示す。剥離試験は、Ａｕ２０ｇ膜
膜の界面にダイヤモンド圧子を打ち込んで２００ｇＷの
荷重をかけ、界面剥離の発生率を調べた。その結果、純
水に浸漬した試料は８０〜１００％の剥離発生率を示し
たのに対し、ＰＯ４３−を添加した液に浸漬した試料で
は剥離はおこらなかった。Hereinafter, one embodiment of the present invention will be explained with reference to FIGS. 2, 3, and 4. 6 FIG. 2 shows that after sputtering a 20 g Au film on a glass substrate, pure water at room temperature and heated pure water are used. The results of a peel test were performed on samples prepared by immersing them in heated pure water with 0.001 mol/a of POa added to them for 30 minutes, and then sputtering an AQxOs film on top of them. show. In the peel test, a diamond indenter was driven into the interface of the 20 g Au film, a load of 200 gW was applied, and the incidence of interfacial peeling was investigated. As a result, the sample immersed in pure water showed a peeling rate of 80 to 100%, whereas the sample immersed in the solution containing PO43- did not peel off.
第３図は、Ａ Ｑ ２０８膜を、加熱した純水、及び加
熱した純水にＰｏ４３−を０．００１モル／Ｑ添加した
液の各々に浸漬した場合の、浸漬時間と変質層厚さの関
係を示す、ＰＯ４’−を添加することにより、変質層は
まったく生成せず、本発明の効果が確認できた。Figure 3 shows the immersion time and altered layer thickness when the AQ 208 membrane is immersed in heated pure water and heated pure water with 0.001 mol/Q of Po43 added. By adding PO4'-, which shows a relationship, no altered layer was formed at all, confirming the effect of the present invention.
第４図は、スパッタ直後のＡ ｎ ２０８膜、及び加熱
した純水と加熱した純水にＰＯ４ａ″″を０．００１モ
ル／Ｑ添加した液の各々にへ時間浸漬したＡＱｔｏｓ膜
の、Ｘ線回折パターンを示す、純水浸漬によりＡ ｎ
ｘ Ｏａ膜が変質して結晶相が析出しているのに対し、
ｐ０４５１−を添加することによってこの結晶相は析出
しないことがわかり、本発明の効果が確認できた。Figure 4 shows the X-ray images of the A n 208 film immediately after sputtering and the AQtos film immersed in heated pure water and heated pure water with 0.001 mol/Q of PO4a'' added. A n by immersion in pure water, showing a diffraction pattern
x While the Oa film is altered and a crystalline phase is precipitated,
It was found that this crystal phase did not precipitate by adding p0451-, confirming the effect of the present invention.
また、Ａ Ｑ ｚ○８膜に対する密着力の向上は、その
上部に形成したＡＱｚＯｓ膜の他に、パーマロイ等の金
属膜や、ＰＩＱ等の有機樹脂膜についても確認できた。Furthermore, the improvement in adhesion to the AQz○8 film was confirmed not only to the AQzOs film formed thereon but also to metal films such as permalloy and organic resin films such as PIQ.
本発明によれば、Ａ Ｑ ２０ ｇ膜を洗浄する純水に
、。ａ”等ｋ。陰イオンを微量加えることにより。According to the invention, A Q 20 g in pure water to wash the membrane. a” etc. by adding a small amount of anion.
膜表面ノ変質が抑えられ、密着力を向上することができ
る。Deterioration of the film surface can be suppressed and adhesion can be improved.
第１１ｉｎ、薄膜磁気ヘッドの断面図、第２図は本発明
の効果を表わす試験結果比較図、第３図は本発明の効果
を表わす比較図、第４図は本発明の効果を表わす分析結
果図である。
１・・・セラミック基板、２・・・下地ＡＱｘＯｓ膜、
３・・・下部磁性膜、４・・・磁気ギャップ用Ａ Ｑ
２０δ膜、５１９．有機絶縁膜、６・・・導体コイル、
７・・・上部磁性膜、８・・・第一保護Ａ Ｑ ｚ○３
膜、９・・・第二保護Ａ Ｑ ｚ○８ｕ′Ｌ図
５ム 朗11 inch, a cross-sectional view of a thin film magnetic head, FIG. 2 is a comparison diagram of test results showing the effects of the present invention, FIG. 3 is a comparison diagram showing the effects of the present invention, and FIG. 4 is an analysis result showing the effects of the present invention. It is a diagram. 1... Ceramic substrate, 2... Base AQxOs film,
3... Lower magnetic film, 4... Magnetic gap A Q
20δ film, 519. organic insulating film, 6... conductor coil,
7...Top magnetic film, 8...First protection A Q z○3
Membrane, 9...Second protection A Q z○8u'L Figure 5 Mu Ro
Claims (1)
るに際し、前記純水中に吸着性陰イオンを添加すること
を特徴とする薄膜磁気ヘッド用皮膜の形成方法。 ２、特許請求の範囲第１項において、 前記吸着性陰イオンとして、ＰＯ＿４＾３＾−，ＨＰＯ
＿４＾２＾−，Ｈ＿２ＰＯ＿４＾−，ＣｒＯ＿４＾２＾
−，ＨＣｒＯ＿４＾−，Ｃｒ＿２Ｏ＿７＾２＾−，ＨＣ
ｒ＿２Ｏ＿７＾−，ＭｏＯ＿４＾２＾−，ＨＭｏＯ＿４
＾−，ＷＯ＿４＾２＾−，ＨＷＯ＿４＾−，ＡｓＯ＿４
＾３＾−，ＨＡｓＯ＿４＾２＾−，Ｈ＿２ＡｓＯ＿４＾
−の中から選んだものを用いることを特徴とする薄膜磁
気ヘッド用皮膜の形成方法。[Scope of Claims] 1. A method for forming a thin film for a magnetic head, which comprises adding adsorbent anions to the pure water when cleaning the substrate on which the aluminum oxide film is adhered with pure water. 2. In claim 1, the adsorptive anion is PO_4^3^-, HPO
_4^2^-, H_2PO_4^-, CrO_4^2^
-, HCrO_4^-, Cr_2O_7^2^-, HC
r_2O_7^-, MoO_4^2^-, HMoO_4
^-, WO_4^2^-, HWO_4^-, AsO_4
^3^-, HAsO_4^2^-, H_2AsO_4^
- A method for forming a film for a thin film magnetic head, characterized by using a film selected from the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15964186A JPS6316408A (en) | 1986-07-09 | 1986-07-09 | Formation of film for thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15964186A JPS6316408A (en) | 1986-07-09 | 1986-07-09 | Formation of film for thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6316408A true JPS6316408A (en) | 1988-01-23 |
Family
ID=15698151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15964186A Pending JPS6316408A (en) | 1986-07-09 | 1986-07-09 | Formation of film for thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6316408A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689411A (en) * | 1991-09-20 | 1994-03-29 | Hitachi Ltd | Thin film magnetic head and magnetic disk equipping the same |
| US6075679A (en) * | 1997-07-10 | 2000-06-13 | Nec Corporation | Magneto-resistive head accommodating a narrow gap |
-
1986
- 1986-07-09 JP JP15964186A patent/JPS6316408A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689411A (en) * | 1991-09-20 | 1994-03-29 | Hitachi Ltd | Thin film magnetic head and magnetic disk equipping the same |
| US6075679A (en) * | 1997-07-10 | 2000-06-13 | Nec Corporation | Magneto-resistive head accommodating a narrow gap |
| US6251231B1 (en) | 1997-07-10 | 2001-06-26 | Nec Corporation | Manufacturing process for a magneto-resistive head accommodating a narrow gap |
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