JPS63156324A - Wafer etching apparatus used in wafer manufacturing process - Google Patents
Wafer etching apparatus used in wafer manufacturing processInfo
- Publication number
- JPS63156324A JPS63156324A JP30458286A JP30458286A JPS63156324A JP S63156324 A JPS63156324 A JP S63156324A JP 30458286 A JP30458286 A JP 30458286A JP 30458286 A JP30458286 A JP 30458286A JP S63156324 A JPS63156324 A JP S63156324A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- shower
- injection part
- chemical
- chemical solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000002347 injection Methods 0.000 claims abstract description 48
- 239000007924 injection Substances 0.000 claims abstract description 48
- 239000000126 substance Substances 0.000 claims abstract description 39
- 239000000243 solution Substances 0.000 claims abstract description 22
- 235000012431 wafers Nutrition 0.000 claims description 64
- 239000007788 liquid Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000005339 levitation Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007667 floating Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000008708 Morus alba Nutrition 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
Landscapes
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明はウェハ製造工程に適用されて表面の機械的損傷
部分を除去するウェハエツチング装置において、薬液を
ウェハの上面及び下面に噴射させて、ウェハを浮上させ
、ウェハ上下面の面全体に百って薬液を均一に供給し、
面全体が均一にエツチングされるようにしたものである
。Detailed Description of the Invention [Summary] The present invention is applied to a wafer manufacturing process to remove mechanically damaged portions of the surface of a wafer. , the chemical solution is uniformly supplied to the entire top and bottom surfaces of the wafer,
The entire surface is etched uniformly.
（産業上の利用分野〕
本発明はウェハ製造工程用ウェハエツチング装置に関す
る。(Industrial Application Field) The present invention relates to a wafer etching apparatus for a wafer manufacturing process.
その上に半導体デバイスが形成されるウェハは、結晶イ
ンゴットより、大略、スライシング→ラッピング→ベベ
リング→エツチング→ボリッシングを経て製造される。Wafers on which semiconductor devices are formed are generally manufactured from crystal ingots through slicing, wrapping, beveling, etching, and boring.
ウェハに厚さむら（最大厚さと最小厚さとの差）がある
と、デバイスｖＪ造工程で例えばマスクが密着されない
部分ができ、回折による画像変形が起こってしまったり
、露光時に焦点が合わない場所ができて、極く細幅の線
を描く上で支障が生じてしまう。このため、ウェハに厚
さむらが無いようにすることが、特にデバイスの微細化
に伴って重要となる。If the wafer has thickness unevenness (difference between the maximum thickness and the minimum thickness), for example, there will be areas in the device VJ fabrication process where the mask does not adhere tightly, causing image deformation due to diffraction, or areas where the focus will not be achieved during exposure. This creates a problem when drawing extremely thin lines. Therefore, it is important to ensure that the wafer has no uneven thickness, especially as devices become smaller.
エツチングは、前工程のラッピング、ベベリングでウェ
ハ表面に導入された機械的な損傷を除去することが目的
であり、除去量は各面について数１０μｍと大きく、ラ
ッピングで得られた±１μ膳以内の厚さ精度を乱し、ウ
ェハに厚さむらを生じさせ易い。The purpose of etching is to remove mechanical damage introduced to the wafer surface during the previous process of lapping and beveling. This tends to disrupt the thickness accuracy and cause thickness unevenness on the wafer.
従来のウェハエツチング装置の１例を第４図に示す。こ
れは所謂ディープエツチングであり、ウェハ１は、一対
の回転支持ロンド２．３により垂直に間をおいて支持さ
れ、槽４内の薬液５中に浸漬される。回転支持ロブド２
，３は矢印Ａに回転すると共に矢印Ｂ方向に上下動する
。ウェハ１は薬液５中で矢印Ｃ方向に回転すると共に矢
印Ｂ方向に上下動する運動をしながら両面をエツチング
され、前工程で生じた表面の機械的損傷６（第５図参照
）が除去される。An example of a conventional wafer etching apparatus is shown in FIG. This is so-called deep etching, and the wafer 1 is supported by a pair of rotary support rods 2.3 vertically spaced apart from each other and immersed in a chemical solution 5 in a bath 4. Rotating support robed 2
, 3 rotate in the direction of arrow A and move up and down in the direction of arrow B. The wafer 1 is etched on both sides while rotating in the direction of the arrow C in the chemical solution 5 and moving up and down in the direction of the arrow B, and mechanical damage 6 (see FIG. 5) on the surface caused in the previous process is removed. Ru.
ウェハ１の表面と薬液５との相対速度は、ウェハ１の中
心部で遅く、周辺部で速く、ウェハ１の中心部と周辺部
とでは異なる。エツチング速度は上記の相対速度と略対
応し、ウェハ１の中心部で遅く、周辺部で速く、ウェハ
１の中心部と周辺部とではエツチング速度に差が生じ、
エツチング後のウェハ７は第５図に示すように、中心部
が厚く（１＋）、周辺部が薄＜（’ｊｚ）なる傾向があ
り、（ｔ＋−ｔ２）の厚さむらが生じてしまう。厚さむ
らは、拡散律速のとき５〜８μｍ、反応律速でも数μ請
と大きい。The relative velocity between the surface of the wafer 1 and the chemical solution 5 is slow at the center of the wafer 1 and fast at the periphery, and is different between the center and the periphery of the wafer 1. The etching speed roughly corresponds to the above relative speed; it is slow at the center of the wafer 1 and fast at the periphery, and there is a difference in etching speed between the center and the periphery of the wafer 1.
As shown in FIG. 5, the etched wafer 7 tends to be thick at the center (1+) and thin at the periphery ('jz), resulting in a thickness unevenness of (t+-t2). The thickness unevenness is as large as 5 to 8 μm when diffusion is controlled, and several μm even when reaction is controlled.
この厚さむらは、シリコンウェハにおいて進行している
６″φ、８″φという大口径化に伴って増すため、ウェ
ハが人【］径化する程大きな問題となる。This thickness unevenness increases as silicon wafers become larger in diameter, such as 6"φ and 8"φ, and therefore becomes a bigger problem as the wafer becomes larger in diameter.
また、第４図中、ウェハ１と回転支持［１ツド２゜３と
の接点近傍での桑１５の淀み等も厚さむらの原因となっ
ている。In addition, in FIG. 4, stagnation of the mulberry 15 near the contact point between the wafer 1 and the rotating support [1] 2.3 also causes the thickness unevenness.
また第５図の装置ではウェハ１全体を浸漬させるに十分
な深さまで薬液５を槽４内に貯溜する必要があり、必要
とされる薬液５の吊が多く、運転コストが高くなるとい
う問題点もあった。In addition, in the apparatus shown in FIG. 5, it is necessary to store the chemical solution 5 in the tank 4 to a depth sufficient to immerse the entire wafer 1, and there is a problem that the chemical solution 5 is required to be suspended a lot, which increases the operating cost. There was also.
木弁明は、ウェハ￥Ｊ）＾■稈でウェハをエツチングす
る装置にＪ３いて、
薬液を上方にシャワー状に噴射させる下側噴射部と、
該下側噴射部の上方にこれに離間対向して配され上記薬
液を下方にシャワー状に噴射させる上側噴射部と、
上記下側噴射部よりの噴（ト）圧と上記上側噴射部より
の噴射圧との間に上記ウェハを上記下側噴射部より浮上
させる圧力差があるように、上記薬液を上記下側噴射部
及び上記上側噴射部に画定の圧力差をもたせて給送する
ポンプ手段とよりなり、上記ウェハを、上記下側噴射部
と上記上側噴射部との間で、上記下側噴射部よりの薬液
シャワーにより該下側噴射部より浮上させた状態で、そ
の上面及び下面を夫々上記上側噴射部よりの薬液シャワ
ー及び上記下側噴射部よりの上記薬液シャワーによりエ
ツチングする構成である。Ki Benmei is a device for etching wafers with wafers, and has a lower injection part that sprays the chemical solution upward in a shower pattern, and a space above and opposite to the lower injection part. an upper injection section that sprays the chemical solution downward in a shower-like manner, and a lower injection section that holds the wafer between the injection pressure from the lower injection section and the injection pressure from the upper injection section pump means for feeding the chemical solution to the lower injection section and the upper injection section with a predetermined pressure difference so as to cause the wafer to float further between the lower injection section and the upper injection section; Between the upper injection part and the lower injection part, the upper and lower surfaces are respectively exposed to the chemical shower from the upper injection part and the lower injection part while floating above the lower injection part. The structure is such that etching is performed by the chemical shower from above.
ウェハの上面及び下面に薬液シャワーを噴射させること
により、薬液がウェハの上面及び下面の全面に頁って均
一に供給される。ウェハを下方よりの薬液シャワーによ
り支持することにより、ウェハ支持個所でのエツチング
の不均一も生じない。By spraying a chemical shower onto the upper and lower surfaces of the wafer, the chemical is uniformly supplied over the entire upper and lower surfaces of the wafer. By supporting the wafer with a chemical shower from below, non-uniform etching does not occur at the wafer support location.
これにより、ウェハの上下面は均一にエツチングされ、
厚さむらを１μｍ以下としうる。As a result, the top and bottom surfaces of the wafer are etched uniformly.
The thickness unevenness can be reduced to 1 μm or less.
（実施例〕
第１図は本発明になるウェハＴＩＪＪ造工程用ウェハエ
ツチング装置１０の一実施例を示す。(Embodiment) FIG. 1 shows an embodiment of a wafer etching apparatus 10 for a wafer TIJJ manufacturing process according to the present invention.
図中、１１は下側噴射部、１２は上側噴射部であり、間
に寸法ｑの隙間１３をおいて離間対向して上下に配され
ており、塩化ビニール類又はテフロン製の容器１４内に
収容されている。In the figure, 11 is a lower injection part, and 12 is an upper injection part, which are arranged vertically facing each other with a gap 13 of dimension q between them, and are placed in a container 14 made of vinyl chloride or Teflon. It is accommodated.
下側噴射部１１及び上側噴射部１２は共にエツチングす
べきウェハ１のＩＤ＋より多少大径Ｄ２の中空円筒体で
あり、相対向する面内に多数の噴射口１５．１６を有す
る。Both the lower injection part 11 and the upper injection part 12 are hollow cylindrical bodies having a diameter D2 somewhat larger than ID+ of the wafer 1 to be etched, and have a large number of injection ports 15, 16 in opposing surfaces.
容器１４の底部には、薬液１７を貯溜する槽１８が形成
しである。A tank 18 for storing the chemical solution 17 is formed at the bottom of the container 14 .
薬液１７は、第１のポンプ２０により配管２１を通して
途中で冷却器２２により冷却されて下側噴射部１１内に
給送され、全部の噴射口１５より上方に符号２３で示す
ようにシャワー状に噴射される。同時に、薬液１７は第
２のポンプ２５により配管２６を通して途中で冷却器２
７により冷却されて上側噴射部１２内に給送され、全部
の噴射口１６より下方に符号２８で示すようにシャワー
状に一＾射される。The chemical liquid 17 is passed through a pipe 21 by a first pump 20, cooled by a cooler 22 on the way, and fed into the lower injection part 11, and is distributed upwardly from all injection ports 15 in a shower shape as shown by reference numeral 23. Injected. At the same time, the chemical solution 17 is passed through the pipe 26 by the second pump 25 and is passed through the cooler 2 on the way.
7 and fed into the upper injection section 12, and is sprayed downward from all the injection ports 16 in the form of a shower as shown at 28.
ここで、第１のポンプ２０の吐出圧力はＰ＋ 。Here, the discharge pressure of the first pump 20 is P+.
第２のポンプ２５の吐出圧力はＰｌであり、Ｐｌ＞Ｐｌ
となるように定めである。これにより薬液１７は噴射部
１１．１２に夫々異なるＢ力で給送され、噴射口１５よ
りは圧ノＪＰＩ ａで噴射され、噴射口１６よりは圧力
Ｐ２ａで噴射される。The discharge pressure of the second pump 25 is Pl, and Pl>Pl
It is stipulated that As a result, the chemical liquid 17 is fed to the injection parts 11 and 12 with different B forces, and is injected from the injection port 15 at a pressure of JPIa, and from the injection port 16 at a pressure P2a.
吐出圧力Ｐ＋ 、Ｐｌの圧力差はウェハ１の１Ｆ間及び
サイズ等を考慮して定めてあり、圧力Ｐｅａ。The pressure difference between the discharge pressure P+ and Pl is determined taking into account the distance between 1F of the wafer 1 and the size, etc., and the pressure Pea.
Ｐｚａの圧力差（Ｐ＋ ａ Ｐｌ ａ ）が上方への
薬液シャワー２３がウェハ１を上側噴射部１１より浮上
させるようになっている。The pressure difference (P+ a Pla ) of Pza causes the upward chemical shower 23 to cause the wafer 1 to float above the upper injection section 11 .
ウェハ１は、Ｎ２ガスが噴出している浮上搬送路３０を
通って装置１０内に搬入され、シャワー２３．２４が形
成されている上下の噴射ＦｉＩ１１゜１２の間に入り、
ここでシャワー２３により下側噴射部１１よりｈ浮上し
た状態とされる。第２図に併せて示すように、ウェハ１
の上面１ａにはシャワー２８が均一に当たり、下面ｉｂ
＋、：はシャワー２３に均一に当たり、ウェハ１はシャ
ワー２３と２４とに挾み込まれて包まれた状態となり、
薬液１７がウェハ１の上面１ａ及び下面１ｂ上を均一に
且つ勢いよく流れ、面全体に亘って均一に供給される。The wafer 1 is carried into the apparatus 10 through the floating conveyance path 30 where N2 gas is spouted, and enters between the upper and lower injection FiIs 11 and 12 where showers 23 and 24 are formed.
At this point, the shower 23 causes the object to float above the lower injection section 11. As shown in FIG. 2, the wafer 1
The shower 28 evenly hits the upper surface 1a, and the lower surface ib
+ and : are uniformly hit by the shower 23, and the wafer 1 is sandwiched between the showers 23 and 24 and wrapped.
The chemical liquid 17 flows uniformly and vigorously over the upper surface 1a and lower surface 1b of the wafer 1, and is uniformly supplied over the entire surface.
これにより、第３図に示すように、ウェハ１の上下面１
ａ、１ｂ＃径方向上及び周方向上全体に戸って均一に約
２０μ層エツチングされ、表面の機械的損傷６が除去さ
れて且つ厚さむら（ｔ３−ｊａ ＞が１μ戴以下とされ
たエツチング済ウェハ３１が再現性良く得られる。As a result, as shown in FIG.
a, 1b# Approximately 20μ layer was etched uniformly over the entire radial and circumferential direction, mechanical damage 6 on the surface was removed, and thickness unevenness (t3-ja > was set to 1μ or less) Etched wafers 31 can be obtained with good reproducibility.
またウェハ１１は治具に当接して支持されているもので
はなく、シャワー２３自体により流体的に支持されてい
るものであり、薬液の淀みもなく、この点でもウェハ１
１は面内で均一にエツチングされる。In addition, the wafer 11 is not supported in contact with a jig, but is supported fluidly by the shower 23 itself, so there is no stagnation of the chemical solution, and in this respect, the wafer 11 is
1 is etched uniformly within the plane.
エツチング済ウェハ３１は、上下の噴射部１１゜１２の
間より搬出され、Ｎ２ガスが噴出している浮上搬送路３
２を通して次の工程に搬送される。The etched wafer 31 is carried out from between the upper and lower injection parts 11 and 12, and is placed on a floating conveyance path 3 where N2 gas is ejected.
2 and is transported to the next process.
各噴射部１１．１２よりＩ１ｍ射された薬液は容器１４
内を流れ落ちて槽１８内に溜まり、再びポンプ２０又は
２５により吐出され、循環して使用される。ここで薬液
１７の串は常時シャワー２３゜２８を形成させておくに
必要な吊でよく、従来のディーブエッヂング装置におい
て必蟹とされる川に比べて相当少なくてよく、薬液１７
の節減が図られ、運転コストも安価となる。The chemical solution injected by I1m from each injection part 11.12 is placed in a container 14.
The liquid flows down and accumulates in the tank 18, is discharged again by the pump 20 or 25, and is circulated and used. Here, the number of skewers for the chemical solution 17 is sufficient to keep the showers 23 and 28 constantly formed, and the number of skewers required for the chemical solution 17 is considerably smaller than that required for conventional deep edging equipment.
This will result in savings and lower operating costs.
本発明者は、上記のエツチング装置１０により、硝酸９
．４之、フッ酸４’、ＩＪ、氷酢酸４，８之のｎ液を薬
液として使用し、６″φ、１０〜２００ｃｍ（１００）
、Ｐ型（ボロン・ドープ）のシリコンウェハをエツチン
グしたところ、エツチング済ウェハが厚さむう１μ＋１
Ｊ、下で再現性良く（ｑられた。The present inventor used the above-mentioned etching apparatus 10 to perform etching using nitric acid 9.
．． 4, Hydrofluoric acid 4', IJ, Glacial acetic acid 4,8 using n liquid as a chemical solution, 6"φ, 10-200cm (100)
When a P-type (boron-doped) silicon wafer was etched, the etched wafer had a thickness of 1μ+1.
J, with good reproducibility (q.
本発明によれば、ウェハは下方よりの薬液シャワー自体
により支持され、上面及び１・面を上方よりの薬液シャ
ワー及び下方よりの薬液シャワーによりエツチングされ
る構成であるため、薬液がウェハの上面及び下面全体に
頁って均一に供給されて、ウェハの上面及び下面を径方
向及び周方向に亘って均一にエツチングすることが出来
、ウェハ製造工程に伴う表面の機械的損傷を除去するた
めの約２０μ−のエツチングの後にも厚さむらを１μ■
以下に抑えることが出来、最終製品である半導体デバイ
スの品質向上を図ることが出来、特に大口径のウェハに
適用して効果が大である。According to the present invention, the wafer is supported by the chemical shower itself from below, and the upper surface and the first surface are etched by the chemical shower from above and the chemical shower from below. The etching material is uniformly supplied to the entire bottom surface of the wafer, allowing for uniform etching of the top and bottom surfaces of the wafer in both the radial and circumferential directions. Even after 20μ-etching, the thickness unevenness is reduced to 1μ■
This makes it possible to improve the quality of semiconductor devices, which are final products, and is particularly effective when applied to large-diameter wafers.
第１図は本発明のウェハエツチング装置の一実施例の概
略構成図、
第２図は薬液シャワーがウェハ表面に噴射される様子を
示す図、
第３図は第１図の装置によるエツチングを説明する図、
第４図は従来のウェハエツチング装置を示す図、第５図
は第４図の装置によるエツチングを説明する図である。
図において、
６は表面の機械的損傷、
１０はウェハ製造工程用ウェハエツチング装置、１１は
下側噴出部、
１２は上側噴出部、
１５．１６は噴射口、
１７は薬液、
１８は槽、
２０は第１のポンプ、
２１．２６は配管、
２２．２７は冷却器、
２３．２８は薬液シャワー、
３１はエツヂング済ウェハである。FIG. 1 is a schematic diagram of an embodiment of the wafer etching apparatus of the present invention, FIG. 2 is a diagram showing how a chemical shower is sprayed onto the wafer surface, and FIG. 3 explains etching by the apparatus of FIG. 1. FIG. 4 is a diagram showing a conventional wafer etching apparatus, and FIG. 5 is a diagram explaining etching by the apparatus shown in FIG. In the figure, 6 is mechanical damage to the surface, 10 is a wafer etching device for the wafer manufacturing process, 11 is a lower jetting part, 12 is an upper jetting part, 15, 16 is a jetting port, 17 is a chemical solution, 18 is a tank, 20 21.26 is the first pump, 21.26 is the piping, 22.27 is the cooler, 23.28 is the chemical shower, and 31 is the etched wafer.
Claims (1)
て、 薬液（１７）を上方にシャワー状に噴射させる下側噴射
部（１１）と、 該下側噴射部の上方にこれに離間対向して配され上記薬
液を下方にシャワー状に噴射させる上側噴射部（１２）
と、 上記下側噴射部よりの噴射圧（Ｐ＿１ａ）と上記上側噴
射部よりの噴射圧（Ｐ＿２ａ）との間に上記ウェハを上
記下側噴射部より浮上させる圧力差があるように、上記
薬液を上記下側噴射部及び上記上側噴射部に所定の圧力
差をもたせて給送するポンプ手段（２０，２５）とより
なり、 上記ウェハを、上記下側噴射部と上記上側噴射部との間
で、上記下側噴射部よりの薬液シャワー（２３）により
該下側噴射部より浮上させた状態で、その上面及び下面
を夫々上記上側噴射部よりの薬液シャワー（２８）及び
上記下側噴射部よりの上記薬液シャワー（２３）により
エッチングされる構成としたことを特徴とするウェハ製
造工程用ウェハエッチング装置。[Claims] An apparatus for etching wafers in a wafer manufacturing process, comprising: a lower spraying section (11) that sprays a chemical solution (17) upward in a shower pattern; an upper injection section (12) that is arranged to spray the chemical solution downward in a shower-like manner;
and the chemical liquid so that there is a pressure difference between the injection pressure (P_1a) from the lower injection part and the injection pressure (P_2a) from the upper injection part to cause the wafer to float above the lower injection part. pump means (20, 25) for feeding the wafer to the lower injection part and the upper injection part with a predetermined pressure difference; Then, in a state where it is floated from the lower injection part by the chemical shower (23) from the lower injection part, its upper and lower surfaces are exposed to the chemical shower (28) from the upper injection part and the lower injection part, respectively. A wafer etching apparatus for a wafer manufacturing process, characterized in that the wafer is etched by the chemical shower (23).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30458286A JPS63156324A (en) | 1986-12-19 | 1986-12-19 | Wafer etching apparatus used in wafer manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30458286A JPS63156324A (en) | 1986-12-19 | 1986-12-19 | Wafer etching apparatus used in wafer manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63156324A true JPS63156324A (en) | 1988-06-29 |
Family
ID=17934727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30458286A Pending JPS63156324A (en) | 1986-12-19 | 1986-12-19 | Wafer etching apparatus used in wafer manufacturing process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63156324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067286A (en) * | 2005-09-01 | 2007-03-15 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing semiconductor device |
-
1986
- 1986-12-19 JP JP30458286A patent/JPS63156324A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007067286A (en) * | 2005-09-01 | 2007-03-15 | Fuji Electric Holdings Co Ltd | Method and apparatus for manufacturing semiconductor device |
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