JPS63151698A - Method for liquid epitaxy - Google Patents
Method for liquid epitaxyInfo
- Publication number
- JPS63151698A JPS63151698A JP29976186A JP29976186A JPS63151698A JP S63151698 A JPS63151698 A JP S63151698A JP 29976186 A JP29976186 A JP 29976186A JP 29976186 A JP29976186 A JP 29976186A JP S63151698 A JPS63151698 A JP S63151698A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- growth
- epitaxial growth
- thickness
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 title abstract 3
- 238000000407 epitaxy Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 230000012010 growth Effects 0.000 claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 239000007791 liquid phase Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000010261 cell growth Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、液相エピタキシャル成長方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a liquid phase epitaxial growth method.
［従来の技術］
化合物半導体における液相エピタキシャル成長方法には
、幾つかの方式があるが、そのうちの−っに基板と成長
溶液をグラファイトボートに入れて成長を行なわせるも
のがある。[Prior Art] There are several methods for liquid phase epitaxial growth of compound semiconductors, one of which involves placing a substrate and a growth solution in a graphite boat for growth.
第４図はその代表例を示すもので、図はグラファイトボ
ートの一部を示している。Figure 4 shows a typical example, and the figure shows a part of a graphite boat.
図において１は原料の成長溶液、２は基板で、３は基板
２に成長したエピタキシャル成長層を示す。４は基板２
を支持する基板ホルダー、５は成長溶液溜部でこの中に
基板２と成長溶液１′が収納される。６は成長溶液１と
境を接する溶液溜部、７は基板ホルダー４を保持する台
座である。In the figure, 1 is a raw material growth solution, 2 is a substrate, and 3 is an epitaxial growth layer grown on the substrate 2. 4 is board 2
A substrate holder 5 is a growth solution reservoir in which the substrate 2 and the growth solution 1' are stored. Reference numeral 6 designates a solution reservoir that is in contact with the growth solution 1, and reference numeral 7 designates a pedestal that holds the substrate holder 4.
第４図でエピタキシャル成長を開始する場合は、溶液溜
部６を移動させて成長溶液１の一部１′を成長溶液溜部
５に流入させる。次に成長溶液溜部５をスライドさせて
基！ｆｉ２を成長溶液１′ と接触させ、基板２にエピ
タキシャル層３を形成させるのである。When epitaxial growth is started in FIG. 4, the solution reservoir 6 is moved to allow a portion 1' of the growth solution 1 to flow into the growth solution reservoir 5. Next, slide the growth solution reservoir 5 to the base! The fi2 is brought into contact with the growth solution 1' to form an epitaxial layer 3 on the substrate 2.
［発明が解決しようとする問題点］
上述したようにゲラフッフィトボート内で基板と成長溶
液とを接触させてエピタキシャル成長を行なわせるので
あるが、この場合、基板の中央部と周辺部では成長速度
が異なっており、通常周辺部の成長速度が大きいのでエ
ピタキシャル成長層３に示すように周辺部で急激に成長
して突起状に薄膜が形成されることになる。[Problems to be Solved by the Invention] As described above, epitaxial growth is performed by bringing the substrate into contact with the growth solution in a galley fluffy boat, but in this case, the growth rate is low in the center and periphery of the substrate. Since the growth rate is usually high in the peripheral region, the epitaxial growth layer 3 rapidly grows in the peripheral region to form a protruding thin film.
基板にはこの後拡散、表面安定化およびリソグラフィな
どの諸加工が行なわれるが、上述したように突起部を生
ずると、例えばレジスト塗布工程においてレジストが一
様に塗布できないことになり、素子化が困難となる。The substrate is then subjected to various processes such as diffusion, surface stabilization, and lithography. However, if protrusions are formed as described above, the resist cannot be applied uniformly during the resist coating process, and device fabrication becomes difficult. It becomes difficult.
このため従来は基板周辺部の突起部を残しその内側部分
のみを見開して用い、また突起部を機械的に研磨し、あ
るいは化学的エツチングで消滅させるなどの方法が用い
られているが、しかしこれらの方法では基板の有効面積
を小さくさせ、歪を生じて寿命を劣化させるなどの問題
点を生じた。For this reason, conventional methods have been used, such as leaving the protrusions on the periphery of the substrate and using only the inner part, and removing the protrusions by mechanical polishing or chemical etching. However, these methods have caused problems such as reducing the effective area of the substrate, causing distortion and deteriorating the service life.
本発明の目的は、基板周辺部の膜厚を調整して薄膜の厚
さを一定とする液相エピタキシ１シル成長方法を提供す
ることにある。An object of the present invention is to provide a liquid phase epitaxy 1 sil growth method in which the thickness of the thin film is constant by adjusting the film thickness around the substrate.
［問題点を解決するための手段］
本発明は、ボート内の基板と成長溶液とを接触させてエ
ピタキシャル成長を行なわせる液相エピタキシャル成長
方法において、前記基板表面の周辺にその端部と垂直方
向に複数の微小溝を設け、この基板周辺で成長するエピ
タキシャル層の厚さを調整して前記基板に形成される薄
膜の厚さを一定とすることを特徴とし、基板周辺に生ず
る突起部が減少するようにして目的の達成を計ったもの
である。[Means for Solving the Problems] The present invention provides a liquid phase epitaxial growth method in which epitaxial growth is performed by bringing a substrate in a boat into contact with a growth solution. The method is characterized in that the thickness of the epitaxial layer grown around the substrate is adjusted to maintain a constant thickness of the thin film formed on the substrate, thereby reducing protrusions that occur around the substrate. The aim was to achieve this goal.
［作 用〕
本発明の液相エピタキシャル成長方法では、ＧａＡＳ基
板と（３ａを主成分とする成長溶液とを用いてエピタキ
シャル層を成長させるのであるが、基板には予め周辺に
その端部と垂直方向に一定間隔の溝が設けであるので、
エピタキシャル層が成長を開始して次第に成長してゆく
とき、先づこの溝を埋めるようにして成長を続けるので
、基板の周辺部に形成される薄膜の高さは平均化される
ことになり、従来のような突起部は生ぜず、基板面の全
体にわたり平坦なりＭｒが得られることになる。[Function] In the liquid phase epitaxial growth method of the present invention, an epitaxial layer is grown using a GaAS substrate and a growth solution containing (3a as a main component). Since there are grooves at regular intervals,
When the epitaxial layer starts to grow and gradually grows, it continues to grow by first filling the groove, so the height of the thin film formed at the periphery of the substrate is averaged out. Unlike the conventional method, protrusions are not generated, and a flat Mr can be obtained over the entire substrate surface.
［実 施 例１ 以下、本発明の一実施例について図により説明する。[Implementation Example 1] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
第１図は本発明の液相エピタキシャル成長方法を用いる
一実施例の基板上面図、第２図は同じく基板周辺の斜視
図である。FIG. 1 is a top view of a substrate of an embodiment using the liquid phase epitaxial growth method of the present invention, and FIG. 2 is a perspective view of the periphery of the substrate.
これらの図で８は基板、９は溝、１０は凸部を示す。In these figures, 8 indicates a substrate, 9 indicates a groove, and 10 indicates a convex portion.
この実施例では、基板８は主面（１００）の大きさが４
０１ＭＸ４０ＭのＧａＡｓ角形基板が用いられている。In this embodiment, the main surface (100) of the substrate 8 has a size of 4
A 01MX40M GaAs square substrate is used.
基板８の周辺部に設けられた溝９および凸部１０は、写
真製版技術を用いて幅Ｗ＝１０μｍ、高ざｈ＝２μｍ、
長さＪ＝１００μｍ、間隔Ｐ−１００μｍ、となるよう
に形成されている。The grooves 9 and the convex portions 10 provided on the peripheral portion of the substrate 8 are formed using photolithography to have a width W=10 μm, a height h=2 μm, and a width W=10 μm.
They are formed so that the length J=100 μm and the interval P−100 μm.
また成長溶液としてはＧａ５０Ｑ、ＧａＡＳ多結晶３．
５９、Ｔ６５ｍＱの融液が用いられている。In addition, as a growth solution, Ga50Q, GaAS polycrystal 3.
59, T65mQ melt is used.
このように形成された基板と成長溶液とを用いてキャリ
ヤ濃度２ Ｘ １０１７ｃｙｒ−３で厚さ２０μｍのエ
ピタキシャル層を成長させるのであるが、成長を開始す
る場合は基板８とこの成長溶液の入ったグラファイトボ
ートを石英反応管に入れて８２５℃に昇温させ、昇温し
た成長溶液を第４図に示すような成長溶液溜部５に一部
流入し、流入が終了したならばグラファイトボートを１
．０℃／分の割合で降温させて８２０℃に達したときに
第４図に示すような基板ホルダー４をスライドさせて基
板８と成長溶液とを接触させるのである。接触が始まれ
ば）３板８０周辺ではＧａＡｓの薄膜が先づ溝９を埋め
るようにして成長してゆくことになる。An epitaxial layer with a thickness of 20 μm is grown at a carrier concentration of 2×1017 cyr−3 using the substrate 8 and the growth solution thus formed. A graphite boat is placed in a quartz reaction tube and the temperature is raised to 825°C, and a portion of the heated growth solution flows into the growth solution reservoir 5 as shown in Fig. 4. When the inflow is completed, the graphite boat is heated to 825°C.
．． The temperature is lowered at a rate of 0° C./min and when it reaches 820° C., the substrate holder 4 as shown in FIG. 4 is slid to bring the substrate 8 into contact with the growth solution. Once contact begins), a GaAs thin film will grow around the third plate 80, filling the groove 9 first.
このようにして薄膜が成長し、平均厚さが２０μｍｋ：
達すれば基板ホルダー４を再びスライドさせて基板と成
長溶液とを分離して成長を終了Ｊ゛るのである。A thin film was grown in this way, with an average thickness of 20 μm:
When this is reached, the substrate holder 4 is slid again to separate the substrate and the growth solution, and the growth is completed.
第３図はこのようにして形成された基板周辺部の形状を
示すもので、１１がエピタキシせル成長層を示す。FIG. 3 shows the shape of the peripheral portion of the substrate formed in this manner, and 11 indicates an epitaxial growth layer.
図により明らかなようにエピタキシャル成長層１１は殆
んど平坦であることが示されている。As is clear from the figure, the epitaxial growth layer 11 is shown to be almost flat.
この実施例では基板周辺に設けられたｖ４９ Ｂよび凸
部１０では一定の値に設定したが、高ざｈ、問ＶＡＰな
どを選定することにより成長時間などを任意に調整する
ことができる。In this embodiment, the height and convex portions 10 provided around the substrate are set to constant values, but the growth time and the like can be arbitrarily adjusted by selecting the height h, the height VAP, and the like.
また、溝９、凸部１０の形状は断面が矩形の場合につい
て説明したが、どのような形状のものを用いても同様の
効果が得られる。Although the grooves 9 and the convex portions 10 have rectangular cross sections, similar effects can be obtained using any shape.
また、基板には角形の基板を用いたが、これは円形の基
板にも適用することが可能で、同様の効果が得られる。Further, although a rectangular substrate is used as the substrate, this can also be applied to a circular substrate, and the same effect can be obtained.
なお、本実施例ではＧａＡｓを用いる場合について説明
したが、他の化合物半導体にも適用することができる。Note that although this embodiment has been described using GaAs, the present invention can also be applied to other compound semiconductors.
以上、本実施例に示す方法を用いることにより、次のよ
うな効果が得られる。As described above, by using the method shown in this embodiment, the following effects can be obtained.
（１）エピタキシャル成長時の膜厚を一定にすることが
できるので歩留りを大きく向上させることができる。(1) Since the film thickness during epitaxial growth can be made constant, the yield can be greatly improved.
（２）膜厚を一定とすることにより素子化率を９５．７
％から９９．９％と大幅に上昇さけることができる。(2) By keeping the film thickness constant, the deviceization rate can be increased to 95.7
% to 99.9%.
（３）膜厚を平坦とすることによりリソグラフィ工程で
密着形のマスクアライナ−を用いることができ、安価で
微細な加工が可能となる。(3) By making the film thickness flat, a close-contact mask aligner can be used in the lithography process, making it possible to perform fine processing at low cost.
［発明の効果］
本発明によれば、基板周辺部の膜厚を調整して薄膜の厚
さを一定とする液相エピタキシ１シル成艮方法を提供す
ることができる。[Effects of the Invention] According to the present invention, it is possible to provide a liquid phase epitaxy 1 sil deposition method in which the thickness of the thin film is kept constant by adjusting the film thickness around the substrate.
第１図は本発明のエピタキシセル成長方法を用いる一実
施例の基板上面図、第２図は同じく基板周辺の斜視図、
第３図は本発明方法により１りられた基板周辺部分の説
明図、第４図はボートを用いる液相エピタキシャル成長
方法の説明図である。
１：成長溶液、
４：基板ホルダー、
５：成長溶液溜部、
８：基板、
９：溝、
１０：凸部、FIG. 1 is a top view of a substrate of an embodiment using the epitaxial cell growth method of the present invention, and FIG. 2 is a perspective view of the periphery of the substrate.
FIG. 3 is an explanatory diagram of a peripheral portion of a substrate that has been removed by the method of the present invention, and FIG. 4 is an explanatory diagram of a liquid phase epitaxial growth method using a boat. 1: Growth solution, 4: Substrate holder, 5: Growth solution reservoir, 8: Substrate, 9: Groove, 10: Convex part,
Claims (1)
キシャル成長を行なわせる液相エピタキシャル成長方法
において、前記基板表面の周辺にその端部と垂直方向に
複数の微小の溝を設け、該基板周辺で成長するエピタキ
シャル層の厚さを調整して前記基板に形成される薄膜の
厚さを一定とすることを特徴とする液相エピタキシャル
成長方法。(1) In a liquid phase epitaxial growth method in which epitaxial growth is performed by bringing a substrate in a boat into contact with a growth solution, a plurality of micro grooves are provided around the surface of the substrate in a direction perpendicular to the edge thereof, and around the substrate. A liquid phase epitaxial growth method characterized by adjusting the thickness of the epitaxial layer to be grown so that the thickness of the thin film formed on the substrate is constant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29976186A JPS63151698A (en) | 1986-12-16 | 1986-12-16 | Method for liquid epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29976186A JPS63151698A (en) | 1986-12-16 | 1986-12-16 | Method for liquid epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63151698A true JPS63151698A (en) | 1988-06-24 |
Family
ID=17876651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29976186A Pending JPS63151698A (en) | 1986-12-16 | 1986-12-16 | Method for liquid epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63151698A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010050339A (en) * | 2008-08-22 | 2010-03-04 | Sharp Corp | Ground board for manufacturing semiconductor and method of manufacturing same, tabular semiconductor, solar cell |
-
1986
- 1986-12-16 JP JP29976186A patent/JPS63151698A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010050339A (en) * | 2008-08-22 | 2010-03-04 | Sharp Corp | Ground board for manufacturing semiconductor and method of manufacturing same, tabular semiconductor, solar cell |
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