JPS63144515A - Method for holding substrate - Google Patents

Abstract

PURPOSE:To reduce the warpage and deformation, and to lessen the contraction changing rate of a substrate by a method wherein the substrate is suspended by a jig having a structure with which a part of the substrate supported when it is treated in a heating furnace. CONSTITUTION:The upper side of the substrate 4 such as a square-shaped substrate is fixed by one or more substrate fixing parts 5, and the substrate is suspended. As the tensile stress works on the substrate by its own weight, the generation of deformation by warpage can be reduced. Also, the substrate has a marked tendency of contraction by one heat treatment cycle in general, and as tensile stress works on the whole substrate, the contraction rate of the substrate becomes small. The substrate 4 is constructed in such a manner that a circular hole 9 is provided at two corners of the substrate 4 and it is hung by engaging the hole with the circular projected part 10 provided on a quartz jig 6. The quartz jig 6 has the function in which the wafers are conveyed in front and rear, and left and right directions, but a method in which the quartz jig and the substrate are merely left in a tube may be considered. The substrate is maintained in the state wherein it is hung by the quartz jig while a heat treatment is performed.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、熱処理または薄慎堆積をする拡散炉や化学気
相成長反（以下ＣＶＤ炉と略す）において、大面積基板
を処理するのに都合がよい、基板の治具への保持方法に
関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is suitable for processing large-area substrates in a diffusion furnace or chemical vapor deposition reactor (hereinafter abbreviated as CVD furnace) that performs heat treatment or thin deposition. The present invention relates to a convenient method of holding a substrate on a jig.

〔従来の技術〕[Conventional technology]

熱処理またはＷＸ＠堆積とする拡散炉やＣＶＤ炉（特に
減圧ＣＶＤ炉）は、半導体デバイス作製において、使用
不可欠な製造装置である。シリコンウェハーや、薄膜半
導体用基板の大型化に伴い。Diffusion furnaces and CVD furnaces (particularly low-pressure CVD furnaces) for heat treatment or WX@deposition are essential manufacturing equipment in the production of semiconductor devices. With the increasing size of silicon wafers and thin film semiconductor substrates.

製造装置も横型から縦型に移行しククあり、大きなもの
では加センチメートル角前後の大型基板の処理も可能に
なってきている。第２図（ａ’ｋ　（ｂ）と第３図（ａ
）　（ｂ）は、従来の縦型拡散炉における基板の保持方
法の概略図である。第２図（α）（ｂ）は基板を水平に
保持した場合であり、第３図（α）（ｂ）は基板を垂直
に保持した場合である。第２スミ）（ｂ）において１は
石英反応チューブであり１反応ガスは気体導入系でより
導入され、気体排出系３より排出される。角形基板４は
、４つの基板固定部５を備えた石英治具６に支持された
あと、加熱ヒーター７により昇温されな均熱領域まで上
昇し、反応チューブ栓８によシ密蔽されたあと、ガス導
入によシ熱処理がおこなわれる。所定時間の熱処理が施
こされると、反応チューブ栓８が開き、基板４及び石英
治１４ｃ６が下降して熱処理が完了する。なお排気系３
にロータリー真空ポンプを付加すれば１反応チューブ内
が減圧されるので減圧ＣＶＤも可能である。このような
縦型拡散炉は、加熱ヒーターの長さの割に均熱部全仏く
とることができるため、大面積基板の熱処理には、すぐ
れた効果を有する。Manufacturing equipment has also shifted from horizontal to vertical, and it is now possible to process large substrates around the size of a centimeter square. Figure 2 (a'k (b) and Figure 3 (a)
) (b) is a schematic diagram of a method of holding a substrate in a conventional vertical diffusion furnace. FIG. 2(α)(b) shows the case where the substrate is held horizontally, and FIG. 3(α)(b) shows the case when the substrate is held vertically. In the second area (b), 1 is a quartz reaction tube, and 1 reaction gas is introduced through the gas introduction system and discharged through the gas exhaust system 3. After the square substrate 4 was supported by a quartz jig 6 equipped with four substrate fixing parts 5, it was raised to a uniform heating area where the temperature was not raised by a heating heater 7, and hermetically sealed by a reaction tube stopper 8. Then, heat treatment is performed by introducing gas. When the heat treatment is performed for a predetermined time, the reaction tube stopper 8 is opened, the substrate 4 and the quartz ring 14c6 are lowered, and the heat treatment is completed. In addition, exhaust system 3
If a rotary vacuum pump is added to the tube, the pressure inside one reaction tube will be reduced, making low-pressure CVD possible. Such a vertical diffusion furnace has an excellent effect on heat treatment of large-area substrates because it can cover the entire soaking section in spite of the length of the heating heater.

〔発明が解決しようとする間跪点〕[The point at which the invention attempts to solve the problem]

しかし、前述の従来方式だと、基板が大きくなればなる
ほど、基板全体が自重で第２図では下に凸、第３図では
左右どちらかに凸のそり変形が発生しやすいという問題
点を有する。そこで本発明は、このような問題点全解決
するもので、その目的とするところは、大面積基板のセ
フ変形が少ない、基板の治具への支持方法を提供すると
ころにある。However, with the above-mentioned conventional method, there is a problem that as the board becomes larger, the entire board is more likely to warp due to its own weight, convex downward in Figure 2, or convex to the left or right in Figure 3. . SUMMARY OF THE INVENTION The present invention aims to solve all of these problems, and its purpose is to provide a method for supporting a substrate on a jig that reduces the degree of deformation of a large-area substrate.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、基板の熱処理またはＣＶＤを可能とする反応
チューブと、該反応チューブへのガス導入系と排気系と
温度制御系と基板搬送系からなる加熱炉内で基板処理す
る場合の基板の保持方法において、基板の一部を保持す
る機購を備えた治具により基板をつるすことを特徴とす
る。The present invention provides a method for holding substrates when processing substrates in a heating furnace that includes a reaction tube that enables heat treatment or CVD of substrates, a gas introduction system for the reaction tube, an exhaust system, a temperature control system, and a substrate transfer system. The method is characterized in that the substrate is suspended by a jig equipped with a mechanism that holds a portion of the substrate.

〔作用〕[Effect]

本発明の上記の構成によれば、基板は一部のみが、治具
に固定されており、基板には自重による引りばフ応力が
働く、このため、加熱中でも面にはそり変形を発生させ
ないような力が働く。According to the above configuration of the present invention, only a part of the substrate is fixed to the jig, and tensile stress is applied to the substrate due to its own weight. Therefore, warping occurs on the surface even during heating. There is a force that prevents it from happening.

〔実施列〕[Implementation row]

第１１図（ｃ）　（６）は本発明の実施列であり、縦型
拡散炉における基板の保持方法の概略図である。角形基
板４は、１箇所以上の基板固定部５により基板上辺が固
定されて、つるされている、従来方式の第２図、＠３図
（α）（ｂ）とは異なり、基板には自重による引りばり
応力が働くため、そり変形が少なくてすむ、また概して
基板は、１回の熱処理サイクルで収縮する傾向が強く、
基板全体に引りば）応力がかっているため収縮率も小さ
くてすむ。FIG. 11(c) (6) is an embodiment of the present invention, and is a schematic diagram of a method of holding a substrate in a vertical diffusion furnace. The square board 4 is different from the conventional method shown in Figs. 2 and 3 (α) (b) in which the upper side of the board is fixed by one or more board fixing parts 5 and hung, and the board has its own weight. Due to the tensile stress exerted by
Since the stress is applied to the entire substrate, the shrinkage rate can be small.

第４図（α）（ｂ）は、第１図の基板固定部５の一列で
ある。角形基板４の２つの隅に円形の穴９があけられ、
石英治具６にもうけられた円形の凸部ｉｏにひっかける
＊ａになっている。基板固定の方法としてはクリップに
基板を固定してつるす構造でもよい。FIGS. 4(α) and 4(b) show a row of the board fixing portions 5 of FIG. Circular holes 9 are made in two corners of the square substrate 4,
*a is hooked onto a circular convex portion io provided in the quartz jig 6. As a method of fixing the substrate, a structure in which the substrate is fixed to a clip and hung may be used.

第５図（ｔＬ）　（６）は開管型の横型拡散炉における
基板の保持方法の概略図である。第゛１図を横型にし友
ものであシ５石英治具６は、本図のように、左右前後に
搬送できる機能を有し之ものや、単に石英治具と基板を
、チューブ内に放置しておく方式も考えられる。いずれ
にしても、熱処理中は、第４図（ロ））（ｂ）のような
形で１石英治具よりりるされた状轢で保持されている。FIG. 5(tL) (6) is a schematic diagram of a method of holding a substrate in an open-tube horizontal diffusion furnace. 5. The quartz jig 6 may have the function of being able to be transported left, right, front and back, as shown in this figure, or the quartz jig and substrate may simply be left in the tube. There is also a way to keep it. In any case, during the heat treatment, it is held in a state suspended from a quartz jig in the form shown in FIGS. 4(b) and 4(b).

外部加熱ヒーターとしては、瞬間加熱が可能な赤外線ハ
ロゲンランプを用いることも可能である。As the external heater, it is also possible to use an infrared halogen lamp capable of instant heating.

〔発明の効果〕〔Effect of the invention〕

以上述べ念ように本発明によれば、熱処理のかかる工程
で大型基板のそり変形が少なくなると共に、基板収縮変
化率も小さくすることができ、半導体デバイスｔ−作製
する場合に、パターン形成。As mentioned above, according to the present invention, it is possible to reduce the warpage of a large substrate during a process that requires heat treatment, and also to reduce the rate of change in substrate shrinkage, thereby improving pattern formation when manufacturing semiconductor devices.

パターン重ね合わせが容易にできるという効果を有する
。This has the effect that pattern overlay can be easily performed.

【図面の簡単な説明】[Brief explanation of the drawing]

第五図μ）（ｂ）は、本発明の縦型拡散炉における基板
の保持方法の概略図で（α）は断面図％（６）は平面図
である。第２図μ）（６）、第３図（ロ））（ｂ）は、
従来の縦型拡散炉における基板の保持方法の断面図及び
平面図である。第４図μ）（ｂ）は１本発明の基板の治
具への固定の仕方を示した側面図及び平面図である。 第５図（ｔＬ）（ｂ）は１本発明の他の実施例であり、
開管型の横型拡散炉における基板の保持方法の側面図及
び断面図である。 ｌ・・Φ石英反応キューブ ２・・・気体導入系 ３・酔・気体排出系 ４・・・角形基板 ５・・・基板固定部 ６・・・石英治具 ７・−・加熱ヒーター ８・・・反応チューブ栓 ９・・・穴 １（１・−・円形の凸部 以　　　上 出願人　セイコーエプソン株式会社 代理人　弁理士般　上　　務他１名 ｍ’ｔ　　　粒重 第２図 ＩＩ　　凶 第３図FIG. 5 μ) (b) is a schematic diagram of a method of holding a substrate in a vertical diffusion furnace of the present invention, and (α) is a cross-sectional view, and (6) is a plan view. Figure 2 μ) (6) and Figure 3 (B)) (b) are
FIG. 2 is a cross-sectional view and a plan view of a method of holding a substrate in a conventional vertical diffusion furnace. FIG. 4 μ) (b) is a side view and a plan view showing a method of fixing a substrate to a jig according to the present invention. FIG. 5(tL)(b) is another embodiment of the present invention,
FIG. 2 is a side view and a sectional view of a method for holding a substrate in an open-tube horizontal diffusion furnace. l... Φ Quartz reaction cube 2... Gas introduction system 3... Gas exhaust system 4... Square substrate 5... Substrate fixing part 6... Quartz jig 7... Heating heater 8...・Reaction tube stopper 9... Hole 1 (1...Circular convex portion or more) Applicant: Seiko Epson Co., Ltd. Agent, Patent attorney, General Manager, and 1 other person m't Grain weight Figure 2 II Figure 3

Claims (4)

【特許請求の範囲】[Claims] （１）基板に熱処理または化学気相成長ができる反応チ
ューブと該反応チユーブへのガス導入系と排気系と温度
制御系と基板搬送系からなる加熱炉内で基板処理する場
合の基板の保持方法において基板の一部を保持する機構
を備えた治具により、基板をつるすことを特徴とする基
板の保持方法。(1) A method of holding a substrate when processing a substrate in a heating furnace consisting of a reaction tube capable of heat treatment or chemical vapor deposition on the substrate, a gas introduction system to the reaction tube, an exhaust system, a temperature control system, and a substrate transfer system. 1. A method for holding a substrate, comprising hanging the substrate using a jig equipped with a mechanism for holding a part of the substrate. （２）前記加熱炉が、縦型または横型拡散炉であること
を特徴とする特許請求の範囲第１項記載の基板の保持方
法。(2) The method for holding a substrate according to claim 1, wherein the heating furnace is a vertical or horizontal diffusion furnace. （３）前記が熱炉が、縦型または横型の化学気相成長反
であることを特徴とする特許請求の範囲第１項記載の基
板の保持方法。(3) The method for holding a substrate according to claim 1, wherein the thermal furnace is a vertical or horizontal chemical vapor deposition reactor. （４）前記加熱炉が赤外線ランプアニール装置であるこ
とを特徴とする特許請求の範囲第１項記載の基板の保持
方法。(4) The method for holding a substrate according to claim 1, wherein the heating furnace is an infrared lamp annealing device.