JPS63137488A - Optical semiconductor device - Google Patents

Optical semiconductor device

Info

Publication number
JPS63137488A
JPS63137488A JP61284770A JP28477086A JPS63137488A JP S63137488 A JPS63137488 A JP S63137488A JP 61284770 A JP61284770 A JP 61284770A JP 28477086 A JP28477086 A JP 28477086A JP S63137488 A JPS63137488 A JP S63137488A
Authority
JP
Japan
Prior art keywords
wire
insulating film
optical semiconductor
covered
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61284770A
Other languages
Japanese (ja)
Inventor
Kazuhiro Osawa
和宏 大澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP61284770A priority Critical patent/JPS63137488A/en
Publication of JPS63137488A publication Critical patent/JPS63137488A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

PURPOSE:To prevent a short circuit due to the contact of a wire by a method wherein a semiconductor element is loaded in a vessel, the wire is bonded, one part of the bonding wire is covered with an insulating film and the semiconductor element is sealed by the vessel with a beam outlet or inlet window. CONSTITUTION:A light-emitting diode 2 is loaded to a stem 1, a wire is bonded and the central section of the bonding wire 3 is covered with an insulating film 6, and the diode 2 is sealed with a cap 4 using a ball lens 5 as a beam outlet window. A resin such as a thermo-setting silicone resin is employed as the insulating film 6, and applied at the central section of the wire 3 in thickness of approximately 5-20mum after the wire is bonded. Accordingly, since the wire 3 is covered with the insulating film 6, the wire 3 is not brought into contact directly with the internal surface of the cap 4, thus preventing a short circuit due to the contact of the wire, then improving reliability.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、光半導体装置に関し、特にその構造に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical semiconductor device, and particularly to its structure.

〔従来の技術〕[Conventional technology]

光半導体装置として発光ダイオードを例にとって説明す
る。第２図は、光取り出し用窓としてボールレンズを用
いた例の断面図である。ステム１１に発光ダイオード１
２を搭載し、ワイヤーボンディング１３を施し、ボニル
レンズ１５付きのキャップ１４で封止する。ボンディン
グ方式としては、量産性に優れた金線を用いたＮＴＣボ
ンディング方式が一般的である。また、光出力を効率良
くファイバー等に結合するために発光ダイオード１２と
光取り出し窓（ボールレンズ１５）との距離はできるだ
け短い方がよく、さらに効率を高めるため光取り出し窓
にレンズを用いる場合も多い。また、ファイバーと結合
するとき治具に圧入する場合もあり、ステム、キャップ
の材質としては強度の面から、また放熱の面からも鉄材
等の金属を用いるのが一般的である。A light emitting diode will be explained as an example of an optical semiconductor device. FIG. 2 is a sectional view of an example in which a ball lens is used as the light extraction window. Light emitting diode 1 on stem 11
2 is mounted, wire bonding 13 is applied, and the cap 14 with a Bonyl lens 15 is sealed. As a bonding method, an NTC bonding method using gold wire, which is excellent in mass production, is generally used. In addition, in order to efficiently couple the light output to a fiber etc., the distance between the light emitting diode 12 and the light extraction window (ball lens 15) should be as short as possible, and in order to further improve the efficiency, a lens may be used as the light extraction window. many. In addition, when bonding to fibers, they may be press-fitted into a jig, and metals such as iron are generally used for the material of the stem and cap in terms of strength and heat dissipation.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の光半導体装置では、光半導体素子とキャ
ップの内側表面との距離が、通常１００〜２００μｍ程
度と短いため、ボンディングワイヤー高さのバラツキ及
びキャップ、ステムなどの部材寸法のバラツキにより、
ボンディングワイヤーがキャップ内側表面に接触し、シ
ョートしたり、また場合によってはルーズコンタクトで
動作中にショートしてしまう恐れがあった。In the conventional optical semiconductor device described above, the distance between the optical semiconductor element and the inner surface of the cap is usually as short as about 100 to 200 μm.
There was a risk that the bonding wire would come into contact with the inner surface of the cap, causing a short circuit, or in some cases, a loose contact could cause a short circuit during operation.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、光半導体素子を搭載し、ボンディングワイヤ
ーを施し光取り出しまたは取り入れ窓を有する容器によ
り密封する光半導体装置において、ボンディングワイヤ
ーの少なくとも一部が絶縁性の膜で被われていることを
特徴とし、ボンディングワイヤーがキャップの内側表面
に接触することによるショートを排除し、信頼度の高い
光半導体装置を実現するものである。The present invention is an optical semiconductor device mounted with an optical semiconductor element, covered with a bonding wire, and sealed in a container having a light extraction or intake window, characterized in that at least a portion of the bonding wire is covered with an insulating film. This eliminates short circuits caused by the bonding wire coming into contact with the inner surface of the cap, thereby realizing a highly reliable optical semiconductor device.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の一実施例の断面図である。発光ダイオ
ード２をステム１に搭載し、ワイヤーボンディングを行
ないボンディングワイヤー３の中央部を絶縁膜６で被い
、光取り出し窓としてボールレンズ５を用いたキャップ
４で封止する。FIG. 1 is a sectional view of an embodiment of the present invention. A light emitting diode 2 is mounted on a stem 1, wire bonding is performed, and the central part of the bonding wire 3 is covered with an insulating film 6, and sealed with a cap 4 using a ball lens 5 as a light extraction window.

絶縁膜６としては、例えば熱硬化性のシリコン樹脂等を
用いて、ワイヤーボンディング後にワイヤー３の中央部
に数μｍ〜士数μｍ程度の厚さに塗布する。従って、ボ
ンディングワイヤー３が絶縁膜６で被われているため、
キャップ４の内側表面に直接接触することがなく、ワイ
ヤー接触によるショーＩ・がなくなり、信頼度の高い光
半導体装置が実現できる。The insulating film 6 is made of, for example, thermosetting silicone resin, and is applied to the center of the wire 3 to a thickness of several μm to several μm after wire bonding. Therefore, since the bonding wire 3 is covered with the insulating film 6,
Since there is no direct contact with the inner surface of the cap 4, there is no show I due to wire contact, and a highly reliable optical semiconductor device can be realized.

本発明は、光取り出し窓として平板ガラスを用いたキャ
ップ等にも適用できるし、また、発光ダイオードのみな
らず面発光レーザ、その他各種受光素子に適用できるこ
とは云うまでもない。It goes without saying that the present invention can be applied to caps using flat glass as a light extraction window, and can also be applied not only to light emitting diodes but also to surface emitting lasers and various other light receiving elements.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、ボンディングワイ
ヤーを絶縁性の膜で被うことにより、ボンディングワイ
ヤーがキャップの内側表面に接触することによるショー
トを排除し信頼性の高い光半導体装置が実現できる。As explained above, according to the present invention, by covering the bonding wire with an insulating film, short circuits caused by the bonding wire coming into contact with the inner surface of the cap can be eliminated, and a highly reliable optical semiconductor device can be realized. .

また、容器の設計及びワイヤーボンディングの作業性等
の自由度が向上するという効果がある。Further, there is an effect that the degree of freedom in designing the container and the workability of wire bonding is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例の断面図、第２図は１、従来
構造の装置の断面図である。 １．１１・・・ステム、２，１２・・・発光ダイオード
、３．１３・・・ボンディングワイヤー、４，１４・・
・キャップ、５．１５・・・ボールレンズ（光取り出し
窓）、６・・・絶縁膜。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of an apparatus having a conventional structure. 1.11... Stem, 2,12... Light emitting diode, 3.13... Bonding wire, 4,14...
- Cap, 5.15... Ball lens (light extraction window), 6... Insulating film.

Claims (1)

【特許請求の範囲】[Claims] 光半導体素子を搭載し、ボンディングワイヤーを施し光
取り出しまたは、取り入れ窓を有する容器により密封す
る光半導体装置において、前記ボンディングワイヤーの
少なくとも一部が絶縁性の膜で被われていることを特徴
とする光半導体装置。An optical semiconductor device mounted with an optical semiconductor element, provided with a bonding wire, and sealed in a container having a light extraction or intake window, characterized in that at least a portion of the bonding wire is covered with an insulating film. Optical semiconductor device.
JP61284770A 1986-11-28 1986-11-28 Optical semiconductor device Pending JPS63137488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61284770A JPS63137488A (en) 1986-11-28 1986-11-28 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61284770A JPS63137488A (en) 1986-11-28 1986-11-28 Optical semiconductor device

Publications (1)

Publication Number Publication Date
JPS63137488A true JPS63137488A (en) 1988-06-09

Family

ID=17682787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61284770A Pending JPS63137488A (en) 1986-11-28 1986-11-28 Optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS63137488A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509373A (en) * 2002-12-06 2006-03-16 クリー　インコーポレイテッド LED package die with one small footprint

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006509373A (en) * 2002-12-06 2006-03-16 クリー　インコーポレイテッド LED package die with one small footprint
JP4675627B2 (en) * 2002-12-06 2011-04-27 クリー インコーポレイテッド LED package die with one small footprint

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