JPS63137437A - Resin sealing method of semiconductor chip - Google Patents
Resin sealing method of semiconductor chipInfo
- Publication number
- JPS63137437A JPS63137437A JP28545086A JP28545086A JPS63137437A JP S63137437 A JPS63137437 A JP S63137437A JP 28545086 A JP28545086 A JP 28545086A JP 28545086 A JP28545086 A JP 28545086A JP S63137437 A JPS63137437 A JP S63137437A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- chip
- semiconductor chip
- resin sealing
- chloroalkylsilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 19
- 239000011347 resin Substances 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 6
- 238000007789 sealing Methods 0.000 title abstract description 7
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 abstract description 23
- 238000001035 drying Methods 0.000 abstract description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［技術分野］
この発明は、半導体チップの樹脂封止技術の分野に属す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention belongs to the field of resin encapsulation technology for semiconductor chips.
［背景技術］
半導体チップの封止方法として、セラミックス封止、キ
ャン封止等の方法があるが、コストの低減、量産性など
の要求から樹脂封止タイプが急増しつつある。以前より
、樹脂封止半導体では耐湿性、熱膨張性に問題があり、
半導体の信頼性への影響が指摘され、封止樹脂材料の改
良が続けられている。[Background Art] Ceramic encapsulation, can encapsulation, and other methods exist as encapsulation methods for semiconductor chips, but resin encapsulation types are rapidly increasing due to demands for cost reduction and mass productivity. For some time now, resin-encapsulated semiconductors have had problems with moisture resistance and thermal expansion.
The impact on the reliability of semiconductors has been pointed out, and improvements to sealing resin materials are continuing.
樹脂封止半導体では、チップが樹脂で覆われているので
、外部からチップ内部への水分や不純イオンが侵入しに
くい構造になっている。しかし、極微量であるが、樹脂
の吸湿性あるいは樹脂と外部端子の隙間より水分等が樹
脂の内部に侵入することがある。樹脂内部に侵入した水
分は、樹脂とチップの密着性が不良であると、その界面
に保持され、経時的にはチップの側面やポンディングパ
ッド付近からチップ内部へ侵入し、チップの機能にダメ
ージを与える。このように、樹脂パッケージの機密性に
は大きな問題があり、半導体チップと封止樹脂の密着性
を向上させ、半導体チップの耐湿信頼性を向上させる必
要があると指摘されていた。In a resin-sealed semiconductor, the chip is covered with resin, so it has a structure that prevents moisture and impurity ions from entering the chip from the outside. However, although it is a very small amount, moisture may infiltrate into the interior of the resin through the hygroscopic property of the resin or the gap between the resin and the external terminal. If the adhesion between the resin and the chip is poor, moisture that has entered the resin will be retained at the interface, and over time it will enter the chip from the sides of the chip or near the bonding pads, damaging the chip's functionality. give. As described above, there is a major problem in the airtightness of resin packages, and it has been pointed out that it is necessary to improve the adhesiveness between the semiconductor chip and the sealing resin to improve the moisture resistance reliability of the semiconductor chip.
［発明の目的］
この発明は、耐湿信頼性の優れた半導体チップの樹脂封
止法を提供することを目的とする。[Object of the Invention] An object of the present invention is to provide a method for resin-sealing a semiconductor chip with excellent moisture resistance and reliability.
［発明の開示］
この発明に係る樹脂封止法は、半導体チップを樹脂封止
するにあたり、チップをクロロアルキルシランで処理し
た後、樹脂封止することを特徴とする。[Disclosure of the Invention] The resin encapsulation method according to the present invention is characterized in that, in encapsulating a semiconductor chip with a resin, the chip is treated with chloroalkylsilane and then encapsulated with the resin.
以下、この発明の詳細な説明する。The present invention will be explained in detail below.
この発明において使用されるクロロアルキルシランは、
Ｒ２ＳｉＣｌ２または（および）Ｒ３ｉＣ１３で表され
るものである。The chloroalkylsilane used in this invention is
It is represented by R2SiCl2 or (and) R3iC13.
ここでＲとは、０３〜Ｃ３〜Ｃ２０のアルキル基あるい
はフェニル基を意味する。Here, R means an alkyl group of 03 to C3 to C20 or a phenyl group.
半導体チップを前記のクロロアルキルシランで処理する
には、まずクロロアルキルシランをトルエン等の溶媒に
溶解し、チップ表面に塗布し、そして乾燥後、トルエン
あるいはメタノールで洗浄し、過剰に付着したシラン処
理剤を洗い流すことにより行う。そして、乾燥後、チッ
プをエポキシ樹脂等による樹脂封止に供する。To treat a semiconductor chip with the above-mentioned chloroalkylsilane, first dissolve the chloroalkylsilane in a solvent such as toluene, apply it to the chip surface, and after drying, wash with toluene or methanol to remove excess silane. This is done by washing away the agent. After drying, the chip is sealed with an epoxy resin or the like.
つぎに実施例を述べる。Next, an example will be described.
実施例
処理液として、トリクロロステアリルシラン〔ＣＨ３（
ＣＨ２） １．ｓ ｉ Ｃ１ｊ〕を水とトルエンの１：
１ （重量比）の混合溶媒に、シラン：混合溶媒の重量
比が１：１００になるように混合する。ここで、混合液
はトルエン層と水層に分かれているが、トルエン層のみ
を取り出して使用した。Trichlorostearylsilane [CH3(
CH2) 1. s i C1j] of water and toluene:
1 (weight ratio) of the mixed solvent so that the weight ratio of silane:mixed solvent becomes 1:100. Here, although the liquid mixture was separated into a toluene layer and an aqueous layer, only the toluene layer was taken out and used.
このクロロアルキルシランを含んだトルエン溶液に半導
体チップを５分間浸漬した。取り出した後、自然乾燥さ
せ、通常のエポキシ樹脂封止を行った。半導体の信頬性
試験、ＰＣＴ、ＴＨＢテストで従来以上の性能の改善が
認められた。The semiconductor chip was immersed in this toluene solution containing chloroalkylsilane for 5 minutes. After taking it out, it was air-dried and sealed with a normal epoxy resin. Improved performance over conventional semiconductor reliability tests, PCT, and THB tests was observed.
［発明の効果コ
この発明は、半導体チップを、Ｒ，５ｉＣ１２または（
および）Ｒ３ｉＣ１，で表されるクロロアルキルシラン
（ここでＲとは、０３〜Ｃ３〜Ｃ２０のアルキル基ある
いはフェニル基を意味する）で前処理した後、樹脂封止
することを特徴とするので、耐湿信頬性が改良される効
果がある。[Effects of the Invention] This invention provides semiconductor chips with R,5iC12 or (
and) R3iC1, (here, R means an alkyl group of 03 to C3 to C20 or a phenyl group), and then resin sealing is performed. It has the effect of improving moisture resistance.
Claims (1)
よび）ＲＳｉＣｌ＿３で表されるクロロアルキルシラン
（ここでＲとは、Ｃ＿３〜Ｃ＿２＿０のアルキル基ある
いはフェニル基を意味する）で前処理した後、樹脂封止
することを特徴とする半導体チップの樹脂封止法。(1) A semiconductor chip is pretreated with a chloroalkylsilane represented by R_2SiCl_2 or (and) RSiCl_3 (here, R means an alkyl group or a phenyl group of C_3 to C_2_0), and then resin-sealed. A resin encapsulation method for semiconductor chips characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28545086A JPS63137437A (en) | 1986-11-28 | 1986-11-28 | Resin sealing method of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28545086A JPS63137437A (en) | 1986-11-28 | 1986-11-28 | Resin sealing method of semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63137437A true JPS63137437A (en) | 1988-06-09 |
Family
ID=17691675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28545086A Pending JPS63137437A (en) | 1986-11-28 | 1986-11-28 | Resin sealing method of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63137437A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9069133B2 (en) | 1999-06-10 | 2015-06-30 | Honeywell International Inc. | Anti-reflective coating for photolithography and methods of preparation thereof |
-
1986
- 1986-11-28 JP JP28545086A patent/JPS63137437A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9069133B2 (en) | 1999-06-10 | 2015-06-30 | Honeywell International Inc. | Anti-reflective coating for photolithography and methods of preparation thereof |
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