JPS62124757A - Sealing method for ic, and the like - Google Patents

Sealing method for ic, and the like

Info

Publication number
JPS62124757A
JPS62124757A JP26580385A JP26580385A JPS62124757A JP S62124757 A JPS62124757 A JP S62124757A JP 26580385 A JP26580385 A JP 26580385A JP 26580385 A JP26580385 A JP 26580385A JP S62124757 A JPS62124757 A JP S62124757A
Authority
JP
Japan
Prior art keywords
epoxy resin
generation
moisture
resin
ics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26580385A
Other languages
Japanese (ja)
Inventor
Mitsuo Isagawa
去来川　光男
Takao Hayashi
隆夫 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP26580385A priority Critical patent/JPS62124757A/en
Publication of JPS62124757A publication Critical patent/JPS62124757A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the generation of the disconnection of an aluminum wiring by coating the whole surface of a conventional epoxy resin sealing compound with a hydrophobic high molecular material and obviating an intrusion onto a chip such as an IC through a bulk of moisture from the outside. CONSTITUTION:An epoxy resin is used as a sealing resin and an IC, etc. are sealed, and the whole surface constituted of the epoxy resin is coated with a hydrophobic high molecular material, thus lengthening the mean defective generation time of the IC, etc., then preventing the generation of the disconnections of wirings for the IC, etc. Accordingly, the intrusion of moisture is reduced, thus obviating the generation of disconnection, etc.

Description

【発明の詳細な説明】 ［技術分野］ この発明は、ＩＣ，ＬＳＩ等のエポキシ樹脂を使用した
封止技術の分野に属する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention belongs to the field of sealing technology for ICs, LSIs, etc. using epoxy resin.

［背景技術］ ＩＣ，ＬＳＩ等は従来より、エポキシ樹脂による封止法
が盛んであり、現在は大半がエポキシ樹脂による封止が
なされている。ＩＣ等の故障の原因は様々であるが、最
も大きな原因は外部の水分が封止材のバルクおよびリー
ドピンとの界面から内部へ侵入し、バルク中の塩素イオ
ン等と共にＩＣの回路を形成しているアルミニュウム配
線を腐食させ、断線させてしまう場合である。また水の
侵入はリードピンと樹脂の接する界面からより、バルク
からの方が多量侵入している。[Background Art] Conventionally, ICs, LSIs, etc. have been widely encapsulated using epoxy resin, and most of them are currently encapsulated using epoxy resin. There are various causes of failures in ICs, etc., but the biggest cause is external moisture entering the interior through the bulk of the encapsulant and the interface with the lead pins, forming the IC circuit together with chlorine ions, etc. in the bulk. This is a case where the aluminum wiring that is in use corrodes and becomes disconnected. Furthermore, a larger amount of water enters from the bulk than from the interface where the lead pin and resin come into contact.

［発明の目的］ ＩＣ等のエポキシ樹脂による封止法において、より水分
の侵入を少なくすることにより、断線等が生じないよう
にする方法を提供することを目的とする。[Object of the Invention] It is an object of the present invention to provide a method for sealing ICs and the like with epoxy resin by further reducing the intrusion of moisture to prevent wire breakage and the like from occurring.

［発明の開示］ この発明は、従来のエポキシ樹脂封止剤の表面全体を疏
水性高分子材料により被覆し、外部からの水分が、バル
クを通して、ＩＣ等のチップ上に侵入しにくくすること
により、アルミニウム配線の断線を生じにくくすること
を特徴とする。[Disclosure of the Invention] This invention covers the entire surface of a conventional epoxy resin encapsulant with a hydrophobic polymer material, thereby making it difficult for moisture from the outside to penetrate through the bulk onto a chip such as an IC. , which is characterized by making aluminum wiring less likely to break.

この発明で使用される、疏水性高分子物質の種類ないし
その皮膜形成法としては、つぎのものが考えられる。The following types of hydrophobic polymeric substances and methods of forming a film thereof can be considered to be used in the present invention.

（１１シリコン樹脂 ■シリコン樹脂を溶剤（トルエン等）に溶かし、その溶
液中へエポキシ樹脂で封止したＩＣ等を浸漬する。浸漬
の後、焼付硬化を行う。(11 Silicone Resin) Silicone resin is dissolved in a solvent (toluene, etc.), and an IC etc. sealed with epoxy resin is immersed in the solution. After immersion, baking is performed.

■エポキシ樹脂封止ＩＣ等の表面に、メチルクロルシラ
ンの蒸気を当て、表面の水酸基または結合水と化合させ
、メチルポリシロキサンの薄膜を造り、撥水化する。(2) Applying methylchlorosilane vapor to the surface of an epoxy resin-sealed IC, etc., combines it with the hydroxyl groups or bound water on the surface to form a thin film of methylpolysiloxane, making it water repellent.

（２）ポリエチレン、ポリプロピレン等。(2) Polyethylene, polypropylene, etc.

これらの樹脂は、１５０℃位の温度で液体となる。その
中へエポキシ樹脂封止ＩＣを浸漬し、浸漬の後冷却する
ことにより、表面全面にポリエチレンあるいはポリプロ
ピレンの樹脂皮膜が形成される。ただし、この方法で完
成されたＩＣは、耐熱性が低いため、ハンダ付けは出来
ないので、ＩＣソケットを使用しなければならない。These resins become liquid at a temperature of about 150°C. By immersing an epoxy resin-encapsulated IC in the solution and cooling it after immersion, a polyethylene or polypropylene resin film is formed over the entire surface. However, ICs completed using this method have low heat resistance and cannot be soldered, so an IC socket must be used.

実施例 パッシベーション処理を行っていないアルミニュウム配
線チップを、市販のエポキシ樹脂封止剤で封止し、その
表面に前記の樹脂被覆法である、（１）−■、（１）−
〇、（２）の処理法を施し、耐湿信頼性のテストを実施
した。耐湿信頼性のテストは、８５℃で、湿度８５％の
恒温恒湿槽中に試料を放置し、ｎ　＝　１００における
平均不良発生時間を測定し、第１表に示した。Example An aluminum wiring chip that has not been subjected to passivation treatment is sealed with a commercially available epoxy resin sealant, and its surface is coated with the resin described above (1)-■, (1)-
The treatment method (2) was applied and a moisture resistance reliability test was conducted. In the humidity resistance reliability test, the sample was left in a constant temperature and humidity chamber at 85° C. and 85% humidity, and the average failure occurrence time at n = 100 was measured, and the results are shown in Table 1.

［以下余白］ 第１表 ［以下余白］ ［発明の効果］ この発明は、封止用樹脂としてエポキシ樹脂を使用して
ＩＣ等を封止した後、エポキシ樹脂で構成された全面を
、疏水性高分子材料で被覆することを特徴とするので、
ＩＣ等の平均不良発生時間が長くなり、ＩＣ等の配線の
断線を生じにくくさせる効果が認められた。[Blank below] Table 1 [Blank below] [Effects of the invention] This invention provides a method for sealing an IC, etc. using an epoxy resin as a sealing resin, and then converting the entire surface made of the epoxy resin into a hydrophobic material. Since it is characterized by being coated with a polymer material,
It was found that the average failure occurrence time of ICs, etc. was increased, and the effect of making the wiring of ICs, etc. less likely to be disconnected was observed.

Claims (1)

【特許請求の範囲】[Claims] （１）封止用樹脂としてエポキシ樹脂を使用してＩＣ等
を封止した後、エポキシ樹脂で構成された全面を、疏水
性高分子材料で被覆することを特徴とするＩＣ等の封止
法(1) A method for encapsulating ICs, etc., which is characterized by encapsulating ICs, etc. using epoxy resin as a sealing resin, and then covering the entire surface made of epoxy resin with a hydrophobic polymer material.
JP26580385A 1985-11-25 1985-11-25 Sealing method for ic, and the like Pending JPS62124757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26580385A JPS62124757A (en) 1985-11-25 1985-11-25 Sealing method for ic, and the like

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26580385A JPS62124757A (en) 1985-11-25 1985-11-25 Sealing method for ic, and the like

Publications (1)

Publication Number Publication Date
JPS62124757A true JPS62124757A (en) 1987-06-06

Family

ID=17422260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26580385A Pending JPS62124757A (en) 1985-11-25 1985-11-25 Sealing method for ic, and the like

Country Status (1)

Country Link
JP (1) JPS62124757A (en)

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