JPS63137176A - Selective chemical plating method - Google Patents
Selective chemical plating methodInfo
- Publication number
- JPS63137176A JPS63137176A JP28339986A JP28339986A JPS63137176A JP S63137176 A JPS63137176 A JP S63137176A JP 28339986 A JP28339986 A JP 28339986A JP 28339986 A JP28339986 A JP 28339986A JP S63137176 A JPS63137176 A JP S63137176A
- Authority
- JP
- Japan
- Prior art keywords
- chemical plating
- plating
- light
- high molecular
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 48
- 239000000126 substance Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 229920000412 polyarylene Polymers 0.000 claims abstract description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 229920000642 polymer Polymers 0.000 claims description 28
- 239000000203 mixture Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 125000004434 sulfur atom Chemical group 0.000 claims description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052753 mercury Inorganic materials 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 230000000873 masking effect Effects 0.000 abstract description 5
- -1 polyethylene terephthalate Polymers 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 4
- 229920002492 poly(sulfone) Polymers 0.000 abstract description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 3
- 239000005020 polyethylene terephthalate Substances 0.000 abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 abstract description 3
- 239000011888 foil Substances 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000012784 inorganic fiber Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920003043 Cellulose fiber Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229910002666 PdCl2 Inorganic materials 0.000 description 1
- 229920006282 Phenolic fiber Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 150000008430 aromatic amides Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- ZTHNOZQGTXKVNZ-UHFFFAOYSA-L dichloroaluminum Chemical compound Cl[Al]Cl ZTHNOZQGTXKVNZ-UHFFFAOYSA-L 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1608—Process or apparatus coating on selected surface areas by direct patterning from pretreatment step, i.e. selective pre-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/20—Pretreatment of the material to be coated of organic surfaces, e.g. resins
- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2026—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by radiant energy
- C23C18/204—Radiation, e.g. UV, laser
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0326—Organic insulating material consisting of one material containing O
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0333—Organic insulating material consisting of one material containing S
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Abstract
Description
【発明の詳細な説明】
〔発明の背景〕
産業上の利用分野
本発明は、高分子化合物もしくは同組成物からなる成形
物に対して、所定部位に選択的に化学メッキを行なう方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Background of the Invention] Industrial Field of Application The present invention relates to a method for selectively chemically plating predetermined portions of a molded article made of a polymer compound or its composition.
従来の技術
高分子化合物及び繊維、充填剤等で強化した同組成物か
らなる成形物に対してメッキを行なうことは、近年部品
の軽量化、小型化の要求に沿って、金属代替品の分野及
びプリント配線板等の分野で重要視されている。これら
の分野のうちでも、特に、プリント配線板等の場合のよ
うにメッキ部分と非メッキ部分とを所定のパターンに従
って形成させる分野は、化学メッキ法の特性を生かした
ものということができよう。Conventional technology In recent years, plating molded products made of polymer compounds and the same composition reinforced with fibers, fillers, etc. has become popular in the field of metal substitutes, in line with the demand for lighter and more compact parts. It is considered important in fields such as and printed wiring boards. Among these fields, the characteristics of chemical plating methods can be particularly utilized in fields where plated parts and non-plated parts are formed according to a predetermined pattern, such as in the case of printed wiring boards.
しかし、所定のパターンに従ってメッキ部分を設ける方
法は、従来の技術による場合は必ずしも満足すべきもの
ではなかった。例えば、ポリアリーレンサルファイド（
以後、ＰＡＳと略記する）もしくは同組成物をプリント
配線基板として使用する試みは特開昭５７−９６５８８
号、特開昭５９−３９９１号各公報等に開示され、ＰＡ
Ｓに光またはレーザー照射をして、光照射部分表面に金
属をメッキする技術（特開昭６０−
１１０７２９号、特開昭６１−１２７８６７号、特開昭
６１−１２７８６８号各公報等）が開示されているとこ
ろ、此等の方法ではメツキネ要部分を接着インキもしく
はマスキングインキ等でマスクをしたのちに化学メッキ
を行なうのであるが、接着インキあるいはマスキングイ
ンキ等は製造工程中の苛酷な条件下に十分耐え得るもの
でなければならないという問題があり、また光照射部分
のみにメッキのつくポジ型の回路パターン形成法ではス
ルーホール部分のメッキが困難となる欠点も有していた
。However, the method of providing plated portions according to a predetermined pattern has not always been satisfactory using conventional techniques. For example, polyarylene sulfide (
An attempt to use PAS (hereinafter abbreviated as PAS) or the same composition as a printed wiring board was disclosed in Japanese Patent Application Laid-Open No. 57-96588.
No., JP-A No. 59-3991, etc., and PA
A technique is disclosed in which S is irradiated with light or laser and metal is plated on the surface of the light-irradiated portion (Japanese Patent Application Laid-Open No. 60-110729, JP-A No. 61-127867, JP-A No. 61-127868, etc.). However, in these methods, chemical plating is performed after masking the important parts with adhesive ink or masking ink, but adhesive ink or masking ink is used under harsh conditions during the manufacturing process. There is a problem that the material must be sufficiently durable, and a positive type circuit pattern forming method in which plating is applied only to the light irradiated area also has the disadvantage that it is difficult to plate the through-hole area.
従って、此のような欠点を改善して、精密な回路パター
ンを選択的に化学メッキにより形成し得る技術の開発が
望まれていた。Therefore, it has been desired to develop a technique that can improve these drawbacks and selectively form precise circuit patterns by chemical plating.
要旨
本発明者らは先にＰＡＳもしくは同組成物からなる成形
物に対して、選択的に化学メッキを行なう方法を提案し
た（特願昭６０−２８５２４２号）が、さらに鋭意研究
した結果、ＰＡＳ以外にかなり多くの高分子もしくは同
組成物からなる成形物に対しても、化学メッキを行なう
際にメッキの前処理として、光を照射することにより照
射部分が選択的にメッキされない事実を見出し、本発明
に到った。Summary The present inventors previously proposed a method of selectively chemically plating molded products made of PAS or the same composition (Japanese Patent Application No. 60-285242), but as a result of further intensive research, PAS In addition, we discovered the fact that when chemical plating is applied to molded articles made of quite a large number of polymers or the same composition, the irradiated areas are not selectively plated by irradiation with light as a pretreatment for plating. We have arrived at the present invention.
すなわち、本発明による選択的化学メッキ法は、分子中
に酸素もしくは硫黄原子を含んだ高分子化合物（ＰＡＳ
は除く）もしくは同組成物からなる成形物に対して化学
メッキを行なう際に、あらかじめメッキ不用部分に０．
１〜６００ｎｍの波長を照射してから化学メッキを行な
うこと、を特徴とするものである。That is, the selective chemical plating method according to the present invention uses a polymer compound (PAS) containing oxygen or sulfur atoms in its molecules.
When chemically plating a molded article made of the same composition or a molded article made of the same composition, 0.
It is characterized in that chemical plating is performed after irradiation with a wavelength of 1 to 600 nm.
効果
本発明の方法によれば、ＰＡＳ以外の含酸素ないし含硫
高分子成形物上に特定波長の光を照射することにより容
易に導電性の回路を化学メッキにより選択的に形成した
金属メッキを施すことができるので、マスキングインキ
等を使用することなく極めて容易にかつ、正確に各種の
高分子物質のプリント配線板を製造することができる。Effects According to the method of the present invention, by irradiating light of a specific wavelength on an oxygen-containing or sulfur-containing polymer molded product other than PAS, it is possible to easily form a conductive circuit selectively by chemical plating. Therefore, printed wiring boards of various polymeric materials can be manufactured extremely easily and accurately without using masking ink or the like.
本発明は対象高分子化合物が分子中に酸素原子または硫
黄原子を含有するものに一般に適用されるので、要求さ
れる機能に合せて高分子物質を選ぶことができるが、こ
れは本発明の他の有用性の一つである。Since the present invention is generally applied to target polymer compounds containing oxygen atoms or sulfur atoms in the molecule, the polymer substance can be selected according to the required function, but this is not the case with the present invention. This is one of the usefulness of
本発明による方法はネガ型のパターン形成法なので、ス
ルーホール部分のメッキも容易という利点を有する。ま
た、本発明の方法をプリント配線板の製造に応用するな
らば、射出成形で任意の形状に成形した成形物基板上に
所望の回路パターンを作ることができ、いわゆる三次元
プリント配線板の製造を簡略かつ容易に行なうことがで
きる。Since the method according to the present invention is a negative pattern forming method, it has the advantage that through-hole portions can be easily plated. Furthermore, if the method of the present invention is applied to the production of printed wiring boards, it is possible to create a desired circuit pattern on a molded substrate molded into an arbitrary shape by injection molding, producing so-called three-dimensional printed wiring boards. can be performed simply and easily.
また、シートあるいはフィルム状に成形した成形物に対
して、本発明の方法を応用するならば、フレキシブルプ
リント配線板の製造ができることはいうまでもない。Furthermore, it goes without saying that if the method of the present invention is applied to a molded product in the form of a sheet or film, a flexible printed wiring board can be manufactured.
なお、プリント配線基板の製造は本発明の利用の一例に
すぎず、本発明の方法は高分子成形物にメッキをする必
要のある場合には有効に使用出来ることはいうまでもな
い。表面の構造および元素組成の異るＰＡＳ以外の分子
中に酸素もしくは硫黄原子を含んだ高分子化合物につい
ても、ＰＡＳと同様に、特定の波長を照射すればその化
学メッキ性が抑えられるということは思いがけないこと
であった。It should be noted that the production of printed wiring boards is only one example of the use of the present invention, and it goes without saying that the method of the present invention can be effectively used when it is necessary to plate a polymer molded product. Similarly to PAS, chemical plating properties of polymer compounds containing oxygen or sulfur atoms in their molecules other than PAS, which have different surface structures and elemental compositions, can be suppressed by irradiation with a specific wavelength. It was unexpected.
高分子成形物
本発明に使用される高分子化合物
本発明に主として用いられる高分子は、分子中に酸素原
子もしくは硫黄原子を含んだものであってＰＡＳ以外の
もの、である。ガラス転移点が一４０℃以上のホモポリ
マー及びコポリマー（たとえばブロックコポリマー）が
好ましい。例えば、ポリスルホン、ポリエーテルスルホ
ン、ポリエーテルイミド、ポリエーテルエーテルケトン
、ポリアリレンテレフタレート等のホモポリマー及びブ
ロックコポリマーが本発明の対象高分子化合物として使
用できる（以後、これをＡ高分子と略記する）。Polymer molded product Polymer compound used in the present invention The polymer mainly used in the present invention is one containing an oxygen atom or a sulfur atom in the molecule and is other than PAS. Homopolymers and copolymers (eg block copolymers) having a glass transition temperature of 140° C. or higher are preferred. For example, homopolymers and block copolymers such as polysulfone, polyethersulfone, polyetherimide, polyetheretherketone, and polyarylene terephthalate can be used as the target polymer compound of the present invention (hereinafter abbreviated as polymer A). ).
化学メッキを施すべき高分子成形物は、Ａ高分子単独か
らなるもののほかに、副成分として他の成分を含んでな
る組成物からなるものであってもよく、またその方が好
ましい場合も多い。このような組成物としては、各種充
填剤たとえばマイカ、Ｔ ｔ Ｏ２、Ａｌ２Ｏ３、Ｃａ
ＣＯ３、カーボン環、タルク、Ｃａ Ｓ ｉＯＭ ｇ
ＣＯ３、ＺｎＱ。The polymer molded article to be subjected to chemical plating may be composed of a composition containing other components as subcomponents, in addition to those composed of polymer A alone, and this is often preferable. . Such compositions include various fillers such as mica, T t O2, Al2O3, Ca
CO3, carbon ring, talc, Ca SiOM g
CO3, ZnQ.
２ゝ
ＣａＯなとの粉末充填剤等、各種合成樹脂たとえば上記
樹脂同志のブレンドの他、ポリイミド、ポリアミド、ポ
リアリーレン、ポリフェニレンエーテル、ポリカーボネ
ート、ポリオレフィン、ＡＢＳ、ポリ塩化ビニル、ポリ
メチルメタクリレート、弗素樹脂等とのブレンドを例示
することができる。2. Powder fillers such as CaO, various synthetic resins such as blends of the above resins, polyimide, polyamide, polyarylene, polyphenylene ether, polycarbonate, polyolefin, ABS, polyvinyl chloride, polymethyl methacrylate, fluororesin, etc. For example, blending with
これらの副成分として樹脂を併用するときは、全樹脂成
分中の主要部をＡ高分子が占めなければならない。When resins are used together as these subcomponents, the A polymer must occupy a major portion of the total resin component.
また、上記のような副成分の存無にかかわらず、本発明
の対象成形物は、繊維状強化剤を配合してなるものが好
ましいことがしばしば認められる。Furthermore, regardless of the presence or absence of the above-mentioned subcomponents, it is often recognized that it is preferable for the molded article of the present invention to contain a fibrous reinforcing agent.
この場合の繊維としては、合成無機繊維（炭素繊維、ガ
ラス繊維、シリカ繊維、アルミナ繊維、セラミックファ
イバー等）、天然無機繊維（ロックウールなど）、合成
有機繊維（芳香族アミド繊維、フェノール繊維、セルロ
ーズ繊維など）または天然ｑ機繊維（バルブ、木綿など
）などのいずれでもよい。特に、耐熱性、強度、経済性
等の点から、ガラス繊維が好ましい。繊維の形態は、任
意であり得るし、その表面を処理したものが有効である
ことは勿論である。In this case, the fibers include synthetic inorganic fibers (carbon fiber, glass fiber, silica fiber, alumina fiber, ceramic fiber, etc.), natural inorganic fibers (rock wool, etc.), and synthetic organic fibers (aromatic amide fiber, phenolic fiber, cellulose fiber, etc.). It may be made of natural fibers (fibers, etc.) or natural q-machine fibers (bulbs, cotton, etc.). In particular, glass fiber is preferred from the viewpoints of heat resistance, strength, economic efficiency, and the like. The form of the fibers may be arbitrary, and it goes without saying that those whose surfaces have been treated are effective.
これらの充填材の他に、少量のカップリング材、抗酸化
材、希色料、光増感材等も用いることができる。In addition to these fillers, small amounts of coupling agents, antioxidants, diluents, photosensitizers, etc. can also be used.
これらの各種成分からなる組成物中でＡ高分子は全体の
５０容量％以」二を占めることが好ましい。In a composition composed of these various components, it is preferable that the A polymer accounts for 50% or more by volume of the entire composition.
この範囲より少ないとＡ高分子の特性を十分発揮するこ
とができないからである。なお、容量％は、各成分の重
量と比重とから計算することができる。This is because if the amount is less than this range, the properties of polymer A cannot be fully exhibited. Note that the volume % can be calculated from the weight and specific gravity of each component.
本発明に用いるべきＡ高分子成形物を得るための成形方
法には特に限定はなく、射出成形、押出成形、圧縮成形
などを用いることができる。なお、本発明で「成形物」
という場合は、ペレット、グラニユール等を包含するも
のである。There is no particular limitation on the molding method for obtaining the A polymer molded product to be used in the present invention, and injection molding, extrusion molding, compression molding, etc. can be used. In addition, in the present invention, "molded product"
This includes pellets, granules, etc.
選択的メッキ性の付与
本発明による選択的メッキ法の付与は、Ａ高分子成形物
のメツキネ要部分に特定の波長の光を照射することから
なる。Providing Selective Plating Properties Providing selective plating according to the present invention consists of irradiating the essential parts of the A polymer molded material with light of a specific wavelength.
照射する光としては、波長が０． １〜６００ｎ ｍ
ｓ好ましくは１９０〜４３６ｎｍ、のちのが用いられ、
成形物上に化学メッキが付着しなくなるに十分な照射条
件が選ばれる。また、Ａ高分子もしくはその組成物に光
増感剤を分散させておくことにより照射時間を短縮する
ことができる。また、酸素などの活性に富んだ雰囲気で
照射を行うことによって照射時間を短縮することができ
る。The wavelength of the irradiated light is 0. 1~600nm
s preferably 190 to 436 nm, later used,
Irradiation conditions are selected that are sufficient to prevent chemical plating from adhering to the molded article. Moreover, the irradiation time can be shortened by dispersing a photosensitizer in the A polymer or its composition. Moreover, the irradiation time can be shortened by performing the irradiation in an atmosphere rich in activity such as oxygen.
照射時間は、光源迄の距離、光源の強度及び照射雰囲気
にもよるが、好ましくは０．０１秒以上で１０００時間
未満の範囲で行なわれる。０．０１秒未満では光照射効
果が得難く、１０００時間以上では生産性が悪くなる。The irradiation time depends on the distance to the light source, the intensity of the light source, and the irradiation atmosphere, but is preferably 0.01 seconds or more and less than 1000 hours. If it is less than 0.01 seconds, it is difficult to obtain a light irradiation effect, and if it is more than 1000 hours, productivity will be poor.
特に好ましい照射時間は、０．０１秒〜１００時間であ
る。A particularly preferred irradiation time is 0.01 seconds to 100 hours.
光源としては、高圧水銀燈、低圧水銀燈、超高圧水銀燈
、クセノンランプ、カーボンアーク灯、蛍光灯、ハロゲ
ンランプ等が適している。Ａ高分子成形物に選択的メッ
キ性を付与するには、この成形物基板上に回路等をアル
ミ箔等でマスクし或いはネガ型のレジストを使用してマ
スクしてから光を照射する。十分に光を照射した後、マ
スクを除き、常法によりカタライジング処理して、化学
メッキ処理を行う。光照射は、カタライジング処理を行
ったのちに行なってもよい。Suitable light sources include high-pressure mercury lamps, low-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, carbon arc lamps, fluorescent lamps, and halogen lamps. A: To impart selective plating properties to a polymer molded product, the circuits and the like are masked on the molded product substrate with aluminum foil or the like or with a negative resist, and then light is irradiated. After sufficient light irradiation, the mask is removed, and a chemical plating process is performed by catalizing using a conventional method. Light irradiation may be performed after the catalyzing treatment.
また、同様の目的から光照射の前に成形物表面を物理的
または化学的に粗面化処理、例えば機械的研摩または有
機溶媒（カルボン酸アミド類、エーテル類、ケトン類等
）、もしくは酸化剤（クロム類、過マンガン酸、硫酸等
）あるいはルイス酸（ＡｌＣｌ２、Ｔ ｉ Ｂ ４、Ｓ
ｂＦ５、Ｓ ｎ Ｃｌ ４、ＢＦ３等）の溶液を用いた
処理をほどこすことによって表面を粗面化しておくと、
化学メッキ処理により形成される金属層と成形物基板の
密着性を高めることができる。このような粗面化処理を
行っても、粗面化処理後に光照射するのであれば光照射
の効果が失われることがない。In addition, for the same purpose, the surface of the molded product may be subjected to physical or chemical roughening treatment, such as mechanical polishing, organic solvents (carboxylic acid amides, ethers, ketones, etc.), or oxidizing agents, before light irradiation. (chromium, permanganic acid, sulfuric acid, etc.) or Lewis acids (AlCl2, T i B 4, S
If the surface is roughened by treatment with a solution of bF5, S n Cl 4, BF3, etc.),
Adhesion between the metal layer formed by chemical plating and the molded product substrate can be improved. Even if such surface roughening treatment is performed, the effect of light irradiation will not be lost if light irradiation is performed after surface roughening treatment.
化学メッキ
化学メッキ工程のものは、プラスチック、特にＰＡＳ、
に対する慣用のあるいは使用可能なものと本質的には変
らない。Chemical platingThe chemical plating process uses plastic, especially PAS,
It is not essentially different from what is customary or usable for.
メッキの際の金属には制限はなく、銅、ニッケル、銀、
その他化学メッキ可能な金属がいずれも対象となる。本
発明をアディティブ法によるプリント配線板の製造に応
用する場合は、化学鋼メッキが特に有用である。There are no restrictions on the metal used for plating, including copper, nickel, silver,
All other metals that can be chemically plated are also eligible. Chemical steel plating is particularly useful when the present invention is applied to the production of printed wiring boards by additive methods.
化学メッキ操作の前にカタライジング処理を行なっても
よいことは前記したところでもあるし、また慣用の化学
メッキ工程の範鴫に属することでもある。As mentioned above, a catalizing treatment may be performed before the chemical plating operation, and it also falls within the scope of a conventional chemical plating process.
なお、化学メッキは周知の技術であって、具体的には、
たとえば、メッキすべき金属の水溶性塩およびホルマリ
ンなどの還元剤を含み、さらに必要に応じて酒石酸ナト
リウムカリウム等の錯化剤、その他の補助成分として促
進剤、安定剤、改良剤等を含んだものの水溶液をメッキ
浴として、そこにメッキ対象物を浸漬する。In addition, chemical plating is a well-known technology, and specifically,
For example, it contains a water-soluble salt of the metal to be plated and a reducing agent such as formalin, and if necessary, a complexing agent such as sodium potassium tartrate, and other auxiliary ingredients such as accelerators, stabilizers, and modifiers. An aqueous solution of the material is used as a plating bath, and the object to be plated is immersed in it.
実験例
下記の諸例は、本発明を、具体的に説明するものである
。これらは例示であって、本発明は、その要旨を越えな
い限り、以下の実施例に限定されるものではない。EXPERIMENTAL EXAMPLES The following examples illustrate the present invention. These are illustrative examples, and the present invention is not limited to the following examples unless the gist thereof is exceeded.
実施例１
市販ポリエチレンテレフタレートｒＲＴ５８０Ｊ（東洋
紡■製）を２８０℃でプレスし、０℃の水中にて急冷し
て、厚さ０．３龍の非晶シートを作成した。また、この
非晶シートの一部をさらに２００℃で６０分間保って結
晶化させて、結晶化シートを作成した。Example 1 Commercially available polyethylene terephthalate rRT580J (manufactured by Toyobo ■) was pressed at 280°C and rapidly cooled in water at 0°C to create an amorphous sheet with a thickness of 0.3 mm. In addition, a part of this amorphous sheet was further kept at 200° C. for 60 minutes to crystallize it, thereby creating a crystallized sheet.
上記非晶シートおよび結晶化シートを、回路状にパター
ンを描いたアルミニウム製マスクでカバーし、高圧水銀
燭ＵＭ−４５２（ウシオ電機製）にて、光源までの距離
２０ｃｍで２０時間照射した。The above-mentioned amorphous sheet and crystallized sheet were covered with an aluminum mask having a circuit pattern, and irradiated with a high-pressure mercury candle UM-452 (manufactured by Ushio Inc.) at a distance of 20 cm from the light source for 20 hours.
このウシオ電機製の高圧水銀燭ＵＭ−４５２の代表波長
は、同社製１００Ｗ高圧水銀燈ＵＭ−１０２のそれと同
じである。The representative wavelength of this high-pressure mercury lamp UM-452 manufactured by Ushio Inc. is the same as that of the 100W high-pressure mercury lamp UM-102 manufactured by the company.
その後、アルミニウム製マスクを取り、以下に示す条件
で化学鋼メッキを行なった。Thereafter, the aluminum mask was removed and chemical steel plating was performed under the conditions shown below.
■キャタライジング：２５℃×１０分 後 水洗■化学
銅メッキ二 〇℃×２０分 後 水洗■乾 燥
なお、用いた処理液の組成は、下記の通りであった。■ Catalyzing: After 10 minutes at 25° C. Washing with water ■ Chemical copper plating After 20 minutes at 20° C. Washing with water ■ Drying The composition of the treatment solution used was as follows.
■キヤタライジンダ液
（０，０２０ｒ ＰｄＣｌ２＋０．２ｇ５ｎＣ１２＋
１２Ｎ ＨＣｌ １０ｍ１）全量１００ｍ１
■化学メッキ液
（１，５６ｇ ＣｕＳＯ４−５Ｈ，Ｏ＋１、Ｏｇ
ＮａＯＨ＋５．０ｒ
ＮａＫＣ４Ｈ４０６・４Ｈ２０＋３７％ホルマリン１．
０ｍｌ／水溶液） 全量１００ｍ１得られた結果は、
表−１に示す通りであった。■ Catalysinda liquid (0,020r PdCl2+0.2g5nC12+
12N HCl 10ml) Total volume 100ml ■Chemical plating solution (1,56g CuSO4-5H, O+1, Og
NaOH+5.0r NaKC4H406・4H20+37% formalin 1.
0ml/aqueous solution) Total volume 100ml The results obtained are:
It was as shown in Table-1.
非晶シート、結晶化シートによらず、光来照射部分だけ
にメッキされるという、選択的化学メッキがなされてい
た。Selective chemical plating was used, in which only the irradiated area was plated, regardless of whether it was an amorphous sheet or a crystallized sheet.
表−１
実施例２
実施例１で用いた試料を、光照射する前に、クロム酸で
エツチングあるいは、光照射後クロム酸でエツチングし
た他は、実施例１と同じ方法によって、化学メッキを行
った。使用したクロム酸の組成は、０．２ｇ Ｎａ２
Ｃｒ２Ｏ７”２ＪＯ＋１００ｍ１９５％Ｈ２ＳＯ４であ
り、エツチング条件は２５℃×２分とした。Table 1 Example 2 The samples used in Example 1 were chemically plated in the same manner as in Example 1, except that they were etched with chromic acid before irradiation with light, or etched with chromic acid after irradiation with light. Ta. The composition of the chromic acid used was 0.2g Na2
The etching condition was Cr2O7''2JO+100m195%H2SO4 at 25°C for 2 minutes.
その結果、光照射する前にエツチング処理したものは、
光照射部にメッキされない特性は得られたが、光照射後
にエツチング処理したものは光照射部にもメッキが起っ
た。As a result, those that were etched before being exposed to light,
Although a characteristic was obtained in which no plating occurred on the light irradiated areas, plating also occurred on the light irradiated areas when etching was performed after light irradiation.
実施例３
市販ポリへキサメチレンテレフタレート〔「ジュラネッ
クス３３００Ｊ （ポリプラスチックス社製）ガラス
ファイバー３０重量％含有〕を樹脂温度２６０℃、金型
温度６０℃、射出圧８００ｋｇ／ｃｄで射出成形して、
厚さ３ｍ＋＊Ｘ １０ｃｍＸ １２ｃｍＩの射出成形板
を作成した。得られた射出成形板を、アセトンで洗浄後
、クロム酸でエツチングし、実施例１と同じ方法で光照
射し、化学銅メッキを行った。Example 3 Commercially available polyhexamethylene terephthalate [Duranex 3300J (manufactured by Polyplastics Co., Ltd.) containing 30% by weight of glass fiber] was injection molded at a resin temperature of 260°C, a mold temperature of 60°C, and an injection pressure of 800 kg/cd. ,
An injection molded plate with a thickness of 3 m + * 10 cm × 12 cm I was prepared. The obtained injection molded plate was washed with acetone, etched with chromic acid, and irradiated with light in the same manner as in Example 1 to perform chemical copper plating.
光照射した部分にはメッキがなされず、光来照射部分の
みメッキがなされて、回路状のパターンが形成された。The areas exposed to light were not plated, and only the areas irradiated with light were plated, forming a circuit-like pattern.
上記のように、ガラスファイバー入り成形物の場合にも
、選択的化学メッキは行なえる。As mentioned above, selective chemical plating can also be performed on molded articles containing glass fibers.
実施例４
下記の高分子化合物■〜■にも実施例１と同様の選択的
な化学メッキが行なえることが同様の方法で確認するこ
とができた。Example 4 It was confirmed by the same method that the same selective chemical plating as in Example 1 could be applied to the following polymer compounds (1) to (2).
■ポリサルホンＰ１７００ 日産化学製■ポリ
エーテルサルホン２００Ｐ 三井東圧製■ポリエーテ
ルエーテルケトン４５Ｇ
三井東圧製
■ポリエーテルイミド１０００
エンジニアリングプラスチック製
■ポリエチレンテレフタレート「ルミラー」東し製
すなわち、先ず、高分子化合物■を２８０℃でプレスし
、素早く０℃の水中にて急冷して、厚さ０．３ｍｍ非晶
シートを作成した。同様にして、高分子化合物■〜■の
非晶シートをプレス温度をそれぞれ２８０℃（■’）
、３８０℃（■）、２８０℃（■）および３１０℃（■
）に変更することによってつくった。また、この急冷非
晶シートを、■では２８０℃／２０分、■では２００℃
／２０分加熱して結晶化させて、■および■の結晶化シ
ートを作成した。実施例１と同様に非晶シートおよび結
晶化シートの表面を回路状にパターンを描いたネガ形の
アルミニウム製マスクでカバーし、高圧水銀燭（ウシオ
電機製ＵＭ−１０２型）にて光源までの距離２０ｃｍで
１０時間照射した。尚、実験に使用したウシオ電機製高
圧水銀燭ＵＭ−１０２の代表波長は、３０２．２ｎｍ。■Polysulfone P1700 manufactured by Nissan Chemical ■Polyethersulfone 200P manufactured by Mitsui Toatsu ■Polyether ether ketone 45G manufactured by Mitsui Toatsu ■Polyetherimide 1000 Made of engineering plastic ■Polyethylene terephthalate "Lumirror" manufactured by Toshi In other words, first, a polymer compound (2) was pressed at 280°C and quickly quenched in water at 0°C to create an amorphous sheet with a thickness of 0.3 mm. In the same way, amorphous sheets of polymer compounds ■ to ■ were pressed at a temperature of 280°C (■').
, 380℃ (■), 280℃ (■) and 310℃ (■
) was created by changing it to In addition, this quenched amorphous sheet was heated at 280℃/20 minutes in ■, and at 200℃ in ■.
/20 minutes of heating for crystallization to produce crystallized sheets (■) and (■). As in Example 1, the surfaces of the amorphous sheet and the crystallized sheet were covered with a negative aluminum mask with a circuit-like pattern drawn, and a high-pressure mercury candle (UM-102 type manufactured by Ushio Inc.) was used to illuminate the light source. Irradiation was performed for 10 hours at a distance of 20 cm. The representative wavelength of the high-pressure mercury candle UM-102 manufactured by Ushio Inc. used in the experiment was 302.2 nm.
３１３．２ｎｍ、３３４．１ｎｍ、３６５．０ｎｍ、４
０４．７ｎｍ、４３５．８ｎｍ。313.2nm, 334.1nm, 365.0nm, 4
04.7nm, 435.8nm.
５４６．１ｎｍ、５７７．０ｎｍ等であった。They were 546.1 nm, 577.0 nm, etc.
その後、アルミニウム製マスクを除き、実施例１と同様
の方法で化学メッキを行なった。Thereafter, chemical plating was performed in the same manner as in Example 1 except for the aluminum mask.
いずれの高分子化合物成形物においても、非晶シート、
結晶化シートに関係なく紫外線未照射部分だけにメッキ
されていた。In any molded polymer compound, an amorphous sheet,
Regardless of the crystallized sheet, only the parts not irradiated with ultraviolet rays were plated.
出願人代理人 佐 藤 −雄 手続補正書 昭和６２年１ 月、じ−日Applicant's agent: Mr. Sato Procedural amendment January, 1986, day
Claims (1)
ポリアリーレンサルファイドは除く）もしくは同組成物
からなる成形物に対して化学メッキを行なう際に、あら
かじめメッキ不用部分に０．１〜６００ｎｍの波長の光
を照射してから化学メッキを行なうことを特徴とする、
選択的化学メッキ法。Polymer compounds containing oxygen or sulfur atoms in their molecules (
When performing chemical plating on a molded article made of polyarylene sulfide (excluding polyarylene sulfide) or the same composition, the chemical plating is performed after irradiating light with a wavelength of 0.1 to 600 nm to the areas not to be plated in advance. and
Selective chemical plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283399A JP2559717B2 (en) | 1986-11-28 | 1986-11-28 | Selective chemical plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283399A JP2559717B2 (en) | 1986-11-28 | 1986-11-28 | Selective chemical plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137176A true JPS63137176A (en) | 1988-06-09 |
| JP2559717B2 JP2559717B2 (en) | 1996-12-04 |
Family
ID=17665016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61283399A Expired - Lifetime JP2559717B2 (en) | 1986-11-28 | 1986-11-28 | Selective chemical plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2559717B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001226777A (en) * | 2001-03-02 | 2001-08-21 | Omron Corp | Method for plating polymer forming material, circuit forming component and method for manufacturing the circuit forming component |
| JP2006057166A (en) * | 2004-08-23 | 2006-03-02 | Toyota Motor Corp | Method for forming wiring by plating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5157643A (en) * | 1974-09-23 | 1976-05-20 | Amp Inc | |
| JPS5916436A (en) * | 1982-07-19 | 1984-01-27 | Sony Corp | Address signal transmission system |
| JPS59136472A (en) * | 1983-01-27 | 1984-08-06 | Mitsubishi Rayon Co Ltd | Partial coating method for plastics |
-
1986
- 1986-11-28 JP JP61283399A patent/JP2559717B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5157643A (en) * | 1974-09-23 | 1976-05-20 | Amp Inc | |
| JPS5916436A (en) * | 1982-07-19 | 1984-01-27 | Sony Corp | Address signal transmission system |
| JPS59136472A (en) * | 1983-01-27 | 1984-08-06 | Mitsubishi Rayon Co Ltd | Partial coating method for plastics |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001226777A (en) * | 2001-03-02 | 2001-08-21 | Omron Corp | Method for plating polymer forming material, circuit forming component and method for manufacturing the circuit forming component |
| JP2006057166A (en) * | 2004-08-23 | 2006-03-02 | Toyota Motor Corp | Method for forming wiring by plating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2559717B2 (en) | 1996-12-04 |
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