JPS6313333A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS6313333A JPS6313333A JP15605286A JP15605286A JPS6313333A JP S6313333 A JPS6313333 A JP S6313333A JP 15605286 A JP15605286 A JP 15605286A JP 15605286 A JP15605286 A JP 15605286A JP S6313333 A JPS6313333 A JP S6313333A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wafer
- insulating cover
- recessed
- projecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 8
- 239000004020 conductor Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 235000019738 Limestone Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ドライエツチング装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a dry etching device.
従来の平行平板型プラズマエツチング装置では、エツチ
ングの均一性を向上させるため、反応気体のガス流動を
制御することが行なわれていた。例えば、ウェハ保持電
極ど対向する電極に多数のガス噴出孔を設け、この噴出
孔の位置や大きさ全変えることによって最適なガス流動
を図っていた。In conventional parallel plate type plasma etching apparatuses, the gas flow of the reaction gas has been controlled in order to improve the uniformity of etching. For example, a large number of gas ejection holes are provided in electrodes facing the wafer holding electrode, and optimal gas flow is achieved by completely changing the positions and sizes of the ejection holes.
なお、この糧の装置としてＦｉ、実開昭５９−１８９２
３８号公報、実開昭６０−１１８２３６号公報、特開昭
６０−４６０２９号公報等に開示された発明がある。In addition, as a device for this sustenance, Fi was developed in 1892.
There are inventions disclosed in Publication No. 38, Japanese Utility Model Application Publication No. 60-118236, Japanese Patent Application Publication No. 60-46029, etc.
従来のドライエツチング装置の断面図を第４図に示す。 A cross-sectional view of a conventional dry etching apparatus is shown in FIG.
２．３は平行平板電極で、ウェハ７は前記平板電極３の
中央部に保持されている。１ｏは石英で作られた多数の
φ孔を有する分散板、６は電極カバーである。第５図の
曲線２ｏは第４図に示す従来のエツチング装置において
アルミニウムをエツチングした時のエツチング速度の実
験値を示したものである。なお１曲線２１は計真による
予測値である。上記分散板４から吹き出すガス流動を最
適にすることによって、ウェハ中心部ではかなり均一に
なっているが、ウェハ外周部ではエツチング速度が上が
シ均−性が悪くなっている。2.3 is a parallel plate electrode, and the wafer 7 is held at the center of the plate electrode 3. 1o is a dispersion plate made of quartz and has a large number of φ holes, and 6 is an electrode cover. Curve 2o in FIG. 5 shows the experimental value of the etching rate when aluminum was etched using the conventional etching apparatus shown in FIG. Note that the first curve 21 is a predicted value based on the calculation method. By optimizing the flow of the gas blown out from the dispersion plate 4, the etching becomes fairly uniform at the center of the wafer, but at the outer periphery of the wafer, as the etching rate increases, the etching uniformity deteriorates.
このことが従来装置における歩留υを高める上で問題と
なっている。This poses a problem in increasing the yield υ in conventional devices.
本発明の目的＋ｒｉＨウェハ外周部における不均一なエ
ツチングをなくすことによシ、ウェハ全域の均一性全高
め従未知比べ歩留りを大巾に向上させることが可能なド
ライエツチング装置を提供することにある。The object of the present invention is to provide a dry etching apparatus that can completely improve the uniformity of the entire wafer by eliminating non-uniform etching on the outer periphery of the riH wafer, and can significantly improve the yield compared to conventional methods. .
上昇の原因を明らかにするために装置内部のガスの流動
解析さらＫはラジカル（反応子）の濃度解析を行い、ウ
ェハ表面のエツチング速度分布を評価してみた。計算結
果によればウェハ外周部でのエツチング速度が高くなる
のは、ウェハ外周部によシ外側の電極板上からウェハ中
心部に向って拡散によジラジカルが多量に持ち込まれる
ため、ウェハ外周部の濃度が高くなシ、その結果そこで
の反応が進むためであることが分かった。これは、プラ
ズマ領域がウェハ径よシも広い空間に分布し、ウェハよ
シ外側領域でラジカルが多量に発生しているためと考え
られる。従ってウェハ外周部におけるエツチング速度の
局所的上昇を抑え均一性を高めるためには、プラズマ領
域をウェハ径程度に保持すればよ！、−，。In order to clarify the cause of the increase, we analyzed the gas flow inside the device and analyzed the concentration of radicals (reactants) to evaluate the etching rate distribution on the wafer surface. According to the calculation results, the etching rate is higher at the wafer's outer periphery because a large amount of diradicals are brought in by diffusion from the outer electrode plate toward the wafer center. It turns out that this is because the concentration of oxidants is high, and as a result, the reaction progresses there. This is thought to be because the plasma region is distributed over a space wider than the wafer diameter, and a large amount of radicals are generated in the outer region of the wafer. Therefore, in order to suppress the local increase in the etching rate on the wafer's outer periphery and improve uniformity, it is necessary to maintain the plasma area at about the diameter of the wafer! ,−,.
従って１本発明では、上記の点を考慮しウェハ保持電極
と対向する電臘を、凸形状の導体部と凹形状の絶縁カバ
ーとからなる二重積層構造電極を採用し、プラズマ領域
をほぼウェハ径と等しい領域とすることによシ、ウェハ
径よシ外側でのラジカルの発生を抑制し、ウェハ外周部
におけるラジカルの集中を抑えるようにし、エツチング
の均一性の向上を図るようにしたものである。Therefore, in the present invention, in consideration of the above points, a double laminated structure electrode consisting of a convex conductor part and a concave insulating cover is adopted as the electric lug facing the wafer holding electrode, so that the plasma region is almost directly above the wafer. By making the area equal to the diameter of the wafer, the generation of radicals on the outside of the wafer diameter is suppressed, and the concentration of radicals on the outer periphery of the wafer is suppressed, thereby improving the uniformity of etching. be.
凸形状の導体部全被服する凹形状の絶縁カバーは、上下
電極間にコンデンサーを挿入したことと等価である。第
２図はエツチング装置の電気回路図であシ、凹形状物の
段差は、電極中央部のインピーダンスＺｃが周辺部のイ
ンピーダンスＺｏに比べ小さくなるように動作する。し
たがって、上下電極２，３の間に印加される高周波電流
は電標中央部に集中して流れ、プラズマ領域をその領域
に限定することができる。The concave insulating cover covering the entire convex conductor is equivalent to inserting a capacitor between the upper and lower electrodes. FIG. 2 is an electrical circuit diagram of the etching apparatus, and the step of the concave structure operates so that the impedance Zc at the center of the electrode is smaller than the impedance Zo at the periphery. Therefore, the high frequency current applied between the upper and lower electrodes 2 and 3 flows in a concentrated manner at the center of the electric sign, and the plasma region can be limited to that region.
また、導体部への絶縁カバーの被服はスパッタによる電
極金属の放出を防止し、ウェハの金属汚染の影響をなく
すことができる。Further, covering the conductor portion with an insulating cover prevents release of electrode metal due to sputtering, and can eliminate the influence of metal contamination on the wafer.
以下に本発明の一実施例を図に従って具体的に説明する
。第１図は本発明によるドライエツチング装置の断面図
を示すものである。図において１は内部を低圧に保持す
るためのケーシング、２及び３はそれぞれ上部及び下部
電極であり、９は前記電極２．３間にプラズマを発生さ
せるための高周波電源である。一方、灰石性ガスは、ガ
ス供給ロアよシ導入され、電極間内でプラズマ化され。An embodiment of the present invention will be specifically described below with reference to the drawings. FIG. 1 shows a sectional view of a dry etching apparatus according to the present invention. In the figure, 1 is a casing for maintaining the inside at low pressure, 2 and 3 are upper and lower electrodes, respectively, and 9 is a high frequency power source for generating plasma between the electrodes 2 and 3. On the other hand, the limestone gas is introduced through the gas supply lower and is turned into plasma between the electrodes.
ウェハ面上でエツチングを行いながら装置内を流れ排気
口８よシ排気される。ところで、前記電極２には、凸形
断面形状の導電性部材に凹形断面形状の絶縁カバー４が
取付けられ、二重積層構造電極となっている。一方前記
電極３は、ウエノ・に接触する部分だけ突出して凸形断
面形状となっており、その周りには、絶縁カバーリング
５が置かれている。なお、上部、下部電極２．３の凸部
の太きさはウェハ６と等しい。第３図には本発明による
二重積層構造電極を用いた場合のエツチング速度分布を
、前述した計算法によシ求めた結果を示す。曲線３１が
本発明の場合１曲線３０が従来の装置の場合である。本
発明の如く二重積層構造電極を用いることによって、プ
ラズマ領域をウェハ径と同程度の領域に限定して保つこ
とができるので、ウェハ外周部のエツチング速度が抑え
られ全体でエツチングの均一性が向上することを示して
いる。While performing etching on the wafer surface, it flows through the apparatus and is exhausted through the exhaust port 8. Incidentally, the electrode 2 has an insulating cover 4 having a concave cross-section attached to a conductive member having a convex cross-section, thereby forming an electrode with a double laminated structure. On the other hand, the electrode 3 has a convex cross-sectional shape with only the portion that comes into contact with the electrode protruding, and an insulating cover ring 5 is placed around it. Note that the thickness of the convex portions of the upper and lower electrodes 2.3 is equal to that of the wafer 6. FIG. 3 shows the results of the etching rate distribution obtained using the double laminated structure electrode according to the present invention using the calculation method described above. Curve 31 is for the present invention; curve 30 is for the conventional device. By using a double-layer structure electrode as in the present invention, the plasma region can be kept limited to an area comparable to the diameter of the wafer, which suppresses the etching rate at the outer periphery of the wafer and improves the uniformity of etching throughout. It shows that it will improve.
従って本発明によれば、プラズマ領域を所望の領域に限
定するために外周部が絶縁体からなるウェハ保持電極と
対向する電極を、凸形状の導体部と凹形状の絶縁カバー
とからなる二重積層構造とすることにより、従来法にみ
られるようなラジカルのウェハ外周部での局所的集中を
さけることができ、エツチングを均一に行うことができ
る。Therefore, according to the present invention, in order to limit the plasma region to a desired region, the electrode facing the wafer holding electrode whose outer periphery is made of an insulator is replaced with a double electrode made of a convex conductor portion and a concave insulating cover. By adopting a laminated structure, it is possible to avoid local concentration of radicals at the outer periphery of the wafer as seen in conventional methods, and etching can be performed uniformly.
゛以上説明したように、本発明によれば、対向電極間に
反応性気体を送り込み、プラズマを利用して反応を促進
させエツチングを行うドライエツチング装譬において、
ウェハ保持電極と対向する電極を、凸形状の導体部と凹
形状の絶縁カバーとからなる二重積層構造電極とするこ
とにより、従来法に見られる。様なウェハ外周部でのエ
ツチング速度の局所的上昇を抑え、均一エツチングを可
能にし、従来に比べ歩留Ｆ） ｆ大巾に向上させること
ができる。As explained above, according to the present invention, in a dry etching apparatus in which a reactive gas is sent between opposing electrodes and etching is performed by promoting a reaction using plasma,
This can be seen in the conventional method by making the electrode facing the wafer holding electrode a double laminated structure electrode consisting of a convex conductor portion and a concave insulating cover. This method suppresses the local increase in the etching rate at the outer periphery of the wafer, enables uniform etching, and greatly improves the yield (F) compared to the conventional method.
第１図は本発明の一実施例を示す縦断面図、第２図は第
１図に示すものの電気回路図、第３図は第１図に示すも
ののエツチング特性を示す線図、性における実験値を示
す線図である。
１・・・ケーシング、２・・・上部電極、３・・・下部
電砥。
４・・・絶縁カバー、５・・・絶縁カバーリング、６・
・・ウェハ、７・・・ガス供給口、８・・・排気口、９
・・・高周波ｙζり ノ ［ｊ２］ｌ
第 ２ 凹
葛 ３ 凹
ウニハイ立置
′８４ 図Fig. 1 is a longitudinal sectional view showing an embodiment of the present invention, Fig. 2 is an electric circuit diagram of the device shown in Fig. 1, and Fig. 3 is a diagram showing the etching characteristics of the device shown in Fig. 1, and an experiment in the process. It is a line diagram showing values. 1...Casing, 2...Upper electrode, 3...Lower electric grinder. 4... Insulating cover, 5... Insulating cover ring, 6...
...Wafer, 7...Gas supply port, 8...Exhaust port, 9
・・・High frequency yζri ノ [j2]l 2nd concave 3 concave sea urchin high standing '84 Fig.
Claims (1)
ハを保持し、反応性ガスを前記電極間に送り込み、物理
的化学的作用によりウェハ表面をエッチングするドライ
エッチング装置において、ウエハ保持電極と対向する電
極を、凸形状の導体部と前記導体部を被服する凹形状の
カバー部とからなる二重積層構造とし、プラズマ領域を
ウェハ径とほぼ等しい領域に限定したことを特徴とする
ドライエッチング装置。1. In a dry etching apparatus that holds a wafer on one side of parallel plate electrodes provided in a vacuum container, and sends a reactive gas between the electrodes to etch the wafer surface through physical and chemical action, the wafer holding electrode and Dry etching characterized in that the opposing electrodes have a double laminated structure consisting of a convex conductor part and a concave cover part covering the conductor part, and the plasma region is limited to an area approximately equal to the wafer diameter. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15605286A JPS6313333A (en) | 1986-07-04 | 1986-07-04 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15605286A JPS6313333A (en) | 1986-07-04 | 1986-07-04 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6313333A true JPS6313333A (en) | 1988-01-20 |
Family
ID=15619261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15605286A Pending JPS6313333A (en) | 1986-07-04 | 1986-07-04 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6313333A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01279784A (en) * | 1988-05-02 | 1989-11-10 | Tokyo Electron Ltd | Etching device |
| JPH07211705A (en) * | 1994-01-13 | 1995-08-11 | Internatl Business Mach Corp <Ibm> | Device for controlling non- uniformity of plasma and generation of plasma |
| US6902814B2 (en) | 2001-11-13 | 2005-06-07 | Tosoh Corporation | Quartz glass parts, ceramic parts and process of producing those |
| US20120073755A1 (en) * | 2010-09-27 | 2012-03-29 | Tokyo Electron Limited | Electrode and plasma processing apparatus |
-
1986
- 1986-07-04 JP JP15605286A patent/JPS6313333A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01279784A (en) * | 1988-05-02 | 1989-11-10 | Tokyo Electron Ltd | Etching device |
| JPH07211705A (en) * | 1994-01-13 | 1995-08-11 | Internatl Business Mach Corp <Ibm> | Device for controlling non- uniformity of plasma and generation of plasma |
| US6902814B2 (en) | 2001-11-13 | 2005-06-07 | Tosoh Corporation | Quartz glass parts, ceramic parts and process of producing those |
| US20120073755A1 (en) * | 2010-09-27 | 2012-03-29 | Tokyo Electron Limited | Electrode and plasma processing apparatus |
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