JPS63131571A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPS63131571A JPS63131571A JP61278197A JP27819786A JPS63131571A JP S63131571 A JPS63131571 A JP S63131571A JP 61278197 A JP61278197 A JP 61278197A JP 27819786 A JP27819786 A JP 27819786A JP S63131571 A JPS63131571 A JP S63131571A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- light
- type
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 16
- 239000010410 layer Substances 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体撮像素子、特に密着形撮像素子のように、
受光部が大面積になる素子の受光部の構造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to solid-state image sensors, particularly contact type image sensors,
The present invention relates to the structure of a light receiving portion of an element having a large area.
本発明は固体撮像素子において、受光部をζＰＮ接合ダ
イオードと、例えばボＩＪ Ｓｉ電極からなるＭＯＳキ
ャパシタの両方で構成することにより、分光感度が視感
度に近くなり、なおかつ、製造工程が短く、低コストな
、固体撮像素子を提供するものである。The present invention provides a solid-state image sensor in which the light receiving section is configured with both a ζPN junction diode and a MOS capacitor made of, for example, an IJ Si electrode. This provides an inexpensive solid-state imaging device.
従来の固体撮像素子の受光部の構造は第２図のようなＰ
Ｎ接合ダイオードや、第３図のようにＭＯＳ型キャパシ
タの構造をとっていた。The structure of the light receiving section of a conventional solid-state image sensor is as shown in Figure 2.
It had the structure of an N-junction diode or a MOS type capacitor as shown in Figure 3.
しかし、前述の従来技術では、第２図のようなＰ、Ｎ接
合ダイオードの場合には、赤外感度、特に７００ｎｍ〜
ｌ１００Ｏｎの波長の近赤外領域の感度か強くなり、人
間の目の感度（視感度）からずれるという問題点を有す
る＠第３図のようなＭＯＳキャパシタの受光部の場合に
は反対に４００〜５００ｎｍ付近の青成分がボＩＪ Ｓ
ｉに強く吸収され、青感度が落ちるという問題点を有
する０分光感度を視感度にあわせるように改善する方法
としては、第４図のようＫＮ−Ｐ−Ｈの３層構造にする
方法がとられることもあるが、この方法では製造工程が
複雑になりコスト高となるという問題点を有する。However, in the above-mentioned conventional technology, in the case of a P, N junction diode as shown in FIG.
On the contrary, in the case of the light receiving part of a MOS capacitor as shown in Figure 3, the sensitivity in the near-infrared region of the wavelength of l100 On becomes strong and deviates from the sensitivity of the human eye (visual sensitivity). The blue component around 500nm is BoIJS
One way to improve the 0 spectral sensitivity, which has the problem of strong absorption by blue light and reduced blue sensitivity, to match the visual sensitivity is to create a three-layer structure of KN-P-H as shown in Figure 4. However, this method has the problem of complicating the manufacturing process and increasing costs.
そこで本発明はこのような問題点を解決するもので、そ
の目的とするところは、低コストでなおかつ分光感度が
視感度とあうような固体撮像素子を提供するところにあ
る〇
〔問題点を解決するための手段〕
本発明の半導体装置は、受光部がＰＭ′！Ｍ合ダイオー
ドとＭＯＳキャパシタの両方で構成されていることを特
徴とする。The present invention is intended to solve these problems, and its purpose is to provide a solid-state imaging device that is low cost and whose spectral sensitivity matches the visual sensitivity. Means for achieving this] In the semiconductor device of the present invention, the light receiving portion is PM'! It is characterized by being composed of both an M combination diode and a MOS capacitor.
〔実施例〕
第１図は本発明の実施例における断面図であって、１は
例えば、Ｐ型Ｓ１基板であり、２はＮ型拡散層・３は酸
化膜、４は例えば、ボ＋）Ｓｉ＠極で、受光部になると
同時に、蓄積電極となる０５は例えばへ２電極等で形成
された遮光用電極であり、６は受光部分である。入射光
は、１と２でできるダイオードと、４のＭｏＳキャパシ
タに同時に入射する構造となっており１受光部としての
分光感度としてはダイオードとキャパシタの分光特性が
合成された形となるため、視感度に近い形の分光特性と
なる〇
つまり、本発明の上記の構成によれば、受光部ＰＮ接合
ダイオードとＭＯＳキャパシタで構成されているため、
青感度に関しては、ＰＮ接合ダイオードで改善し、近赤
外領域の感度はボＩＪ Ｓ １部分で低減されるため、
全体として視感度に近づくようになる０また、Ｎ−Ｐ−
Ｎ等の３層構造をとっていないため、製造工程としても
簡単になり、低コスト化が期待できる。[Example] Fig. 1 is a cross-sectional view of an example of the present invention, in which 1 is, for example, a P-type S1 substrate, 2 is an N-type diffusion layer, 3 is an oxide film, and 4 is, for example, a boron). 05, which is a Si@ pole and serves as a light receiving part and a storage electrode, is a light-shielding electrode formed of, for example, a 2-electrode, and 6 is a light receiving part. The structure is such that the incident light simultaneously enters the diodes 1 and 2 and the MoS capacitor 4, and the spectral sensitivity of the 1 light-receiving section is a combination of the spectral characteristics of the diode and capacitor. The spectral characteristics are close to the sensitivity. In other words, according to the above configuration of the present invention, since the light receiving part is composed of a PN junction diode and a MOS capacitor,
Regarding blue sensitivity, the PN junction diode improves it, and the sensitivity in the near-infrared region is reduced in the blue IJ S1 part.
Overall visibility approaches 0 and N-P-
Since it does not have a three-layer structure of N or the like, the manufacturing process is simpler and lower costs can be expected.
以上述べたように本発明によれば、受光部をＰＮ接合ダ
イオードとＭＯＳキャパシタの両方での構造としたこと
により、分光感度が、青感度がＰＭ接合ダイオード部分
でよくなり、近赤外部の感度がＭＯＳキャパシタで低減
されることにより、より視感度に近づくという効果を有
する＠また、構造が、Ｎ−Ｐ−Ｈの３層構造をとる必要
がないため、製造工程が短くなり、低コスト化が計られ
るという効果を有する。As described above, according to the present invention, the light receiving section is structured with both a PN junction diode and a MOS capacitor, so that the spectral sensitivity and blue sensitivity are improved in the PM junction diode part, and the near-infrared sensitivity is improved. By reducing this with a MOS capacitor, it has the effect of approaching the visual sensitivity. Also, since the structure does not need to have a three-layer N-P-H structure, the manufacturing process is shortened and costs are reduced. This has the effect of being measured.
第１図は本発明の固体撮像素子の受光部の一実施例を示
す主要断面図０
第２図、第３図、第４図は従来の固体撮像素子の受光部
を示す主要断面図０
１・・・・・・Ｐ型Ｓ１基板
２・・・・・・Ｎ型拡散層
３・−・・・・酸化膜
４・・・・・・〆すＳ１電極
５・・・・・・遮光用電極
６・・・・・・受光部分
７・・・・・・層間絶縁膜
８・・・・・・Ｎ型Ｓ１基板
９・・・・・・Ｐ型ウェル領域
以 上
出願人 セイコーエプソン株式会社
繁 ３ 口
に
鵞４０FIG. 1 is a main cross-sectional view showing one embodiment of the light receiving section of the solid-state image sensor of the present invention.0 FIGS. 2, 3, and 4 are main cross-sectional views showing the light receiving section of a conventional solid-state image sensor01 ...P-type S1 substrate 2...N-type diffusion layer 3...Oxide film 4...Filling S1 electrode 5...For light shielding Electrode 6... Light receiving portion 7... Interlayer insulating film 8... N type S1 substrate 9... P type well area and above Applicant: Seiko Epson Corporation Shigeru 3 40 goose in mouth
Claims (3)
に設けられた受光素子と、該受光素子からの出力を読み
出す回路からなる、いわゆる固体撮像素子において、前
記受光部が、前記半導体基板の主表面に設けられた、第
２導電形の拡散層からなるフォトダイオードと、前記半
導体基板の主表面上に設けられた導電性電極からなる、
いわゆるＭＯＳキャパシタで構成されることを特徴とす
る固体撮像素子。(1) In a so-called solid-state image sensor, which includes a semiconductor substrate of a first conductivity type, a light-receiving element provided on the main surface of the semiconductor substrate, and a circuit for reading out an output from the light-receiving element, the light-receiving section is connected to the semiconductor substrate. consisting of a photodiode formed of a second conductivity type diffusion layer provided on the main surface of the substrate, and a conductive electrode provided on the main surface of the semiconductor substrate,
A solid-state image sensor characterized by being composed of a so-called MOS capacitor.
た走査回路で構成されていることを特徴とする特許請求
の範囲第１項記載の固体撮像素子。(2) The solid-state image sensor according to claim 1, wherein the readout circuit is constituted by a scanning circuit using a MOS transistor.
なることを特徴とする特許請求の範囲１項記載の固体撮
像素子。(3) The solid-state image sensing device according to claim 1, wherein the readout circuit comprises a charge coupled device (CCD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61278197A JPS63131571A (en) | 1986-11-21 | 1986-11-21 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61278197A JPS63131571A (en) | 1986-11-21 | 1986-11-21 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63131571A true JPS63131571A (en) | 1988-06-03 |
Family
ID=17593947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61278197A Pending JPS63131571A (en) | 1986-11-21 | 1986-11-21 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131571A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0788167A2 (en) * | 1992-03-24 | 1997-08-06 | Seiko Instruments Inc. | Semiconductor radial rays detecting with a reading condenser |
| US8684127B2 (en) | 2010-04-13 | 2014-04-01 | Jtekt Corporation | Electric power steering system |
-
1986
- 1986-11-21 JP JP61278197A patent/JPS63131571A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0788167A2 (en) * | 1992-03-24 | 1997-08-06 | Seiko Instruments Inc. | Semiconductor radial rays detecting with a reading condenser |
| EP0790650A2 (en) * | 1992-03-24 | 1997-08-20 | Seiko Instruments Inc. | Semiconductor radiation detector with a reading condenser |
| EP0788167A3 (en) * | 1992-03-24 | 1998-03-11 | Seiko Instruments Inc. | Semiconductor radial rays detecting with a reading condenser |
| EP0790650A3 (en) * | 1992-03-24 | 1998-03-11 | Seiko Instruments Inc. | Semiconductor radiation detector with a reading condenser |
| US8684127B2 (en) | 2010-04-13 | 2014-04-01 | Jtekt Corporation | Electric power steering system |
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