JPS63130768A - Production of thin ta amorphous alloy film - Google Patents
Production of thin ta amorphous alloy filmInfo
- Publication number
- JPS63130768A JPS63130768A JP61277151A JP27715186A JPS63130768A JP S63130768 A JPS63130768 A JP S63130768A JP 61277151 A JP61277151 A JP 61277151A JP 27715186 A JP27715186 A JP 27715186A JP S63130768 A JPS63130768 A JP S63130768A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- substrate
- thin
- amorphous
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000808 amorphous metal alloy Inorganic materials 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000008018 melting Effects 0.000 claims abstract description 13
- 238000002844 melting Methods 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000007738 vacuum evaporation Methods 0.000 claims abstract 2
- 238000001704 evaporation Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 abstract description 31
- 239000000956 alloy Substances 0.000 abstract description 31
- 239000000463 material Substances 0.000 abstract description 20
- 238000002425 crystallisation Methods 0.000 abstract description 12
- 230000008025 crystallization Effects 0.000 abstract description 12
- 229910008423 Si—B Inorganic materials 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 125000004429 atom Chemical group 0.000 abstract description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 239000000498 cooling water Substances 0.000 abstract description 3
- 238000002441 X-ray diffraction Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract description 2
- 125000005843 halogen group Chemical group 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 4
- 229910001362 Ta alloys Inorganic materials 0.000 abstract 1
- 230000009191 jumping Effects 0.000 abstract 1
- 239000000289 melt material Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は高い結晶化温度を有する非晶質合金薄膜の製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for producing an amorphous alloy thin film having a high crystallization temperature.
（従来の技術）
近年、各種の非晶質材料が開発され、金属材料の分野に
おいて、多くの注目を集めている。これらの合金は、従
来の結晶合金とは異なり、結晶構造を持たない合金であ
り、その性質も従来の金属材料にはみちれないものが多
く、機械的性質、耐摩耗性、耐食性、軟磁性、電気的性
質などに優れているため、結晶質金属に代わりうる材料
として、各種の用途開発が行われ、さらに、その用途に
適した材料開発も行われている。これらの合金は、従来
、一般に、単ロール法等の液体急冷法によって作製され
ている。(Prior Art) In recent years, various amorphous materials have been developed and are attracting a lot of attention in the field of metal materials. Unlike conventional crystalline alloys, these alloys do not have a crystal structure, and many of their properties are not found in conventional metal materials, such as mechanical properties, wear resistance, corrosion resistance, and soft magnetism. Due to its excellent electrical properties, various uses are being developed as a material that can replace crystalline metals, and materials suitable for these uses are also being developed. These alloys have conventionally been generally produced by a liquid quenching method such as a single roll method.
（発明が解決しようとする問題点）
非晶質合金の最大の問題点は、熱的に不安定な点にある
。これは非晶質状態が熱力学的に非平衡な準安定状態で
あるということに由来するもので、非晶質合金の宿命と
もいえることである。即ち、非晶質合金は、一般に、そ
れぞれ特有の結晶化温度を有し、その温度を越えるとよ
り熱的に安定な結晶合金に変化してしまい、非晶質状態
のどきにみちれた優れた薄着性が全て失われてしまうの
である。この結晶化温度は、材料によって異なるが、一
般に、絶対温度で測定した融点の０．４〜０．６倍程度
の値をとることが知られている。従って、結晶化温度の
高い合金を得るためには、融点の高い合金を非晶質化し
なければならない。(Problems to be Solved by the Invention) The biggest problem with amorphous alloys is that they are thermally unstable. This is due to the fact that the amorphous state is a thermodynamically non-equilibrium metastable state, and can be said to be the fate of amorphous alloys. In other words, each amorphous alloy generally has its own specific crystallization temperature, and when that temperature is exceeded, it changes to a more thermally stable crystalline alloy, and the superiority of the amorphous state is reduced. This results in the loss of all the thin adhesion properties. Although this crystallization temperature varies depending on the material, it is generally known that it takes a value of about 0.4 to 0.6 times the melting point measured in absolute temperature. Therefore, in order to obtain an alloy with a high crystallization temperature, an alloy with a high melting point must be made amorphous.
Ｔａ−８ｉ−Ｂ合金は、融点が約２３００°Ｃ以上とき
わめて高い。このため液体急冷法によって作製されたＴ
ａ −Ｓｉ −Ｂ系非晶質合金は、その結晶化温度が８
００°Ｃ〜９６０°Ｃと非常に高く、非晶質合金の問題
点を大幅に改善することが可能となった（特願昭６１゜
０１２３８５号）。さらに、このＴａ −Ｓｉ −Ｂ系
非晶質合金は、一般の非晶質合金に特有の高強度、高硬
度などの優れた機械的性質を有しているために、例えば
、耐摩゛耗性材料、および、温度上昇を伴う電極用材料
などへの応用が考えられる。The Ta-8i-B alloy has an extremely high melting point of about 2300°C or higher. For this reason, T
The a-Si-B amorphous alloy has a crystallization temperature of 8
00°C to 960°C, making it possible to significantly improve the problems of amorphous alloys (Japanese Patent Application No. 61°012385). Furthermore, this Ta-Si-B amorphous alloy has excellent mechanical properties such as high strength and high hardness that are characteristic of general amorphous alloys, so it has excellent wear resistance, for example. Possible applications include materials and materials for electrodes that are subject to temperature increases.
しかしながら、液体急冷法によって作製されるＴａ −
５ｉ−Ｂ系非晶質合金は、その形状が幅数ｍｍ〜数ｃｍ
のリボン状であるために、広い面積を有する非晶質合金
を得ることができないという問題点があった。さらに、
ある物質の上に、前記非晶質合金を薄膜状で形成するこ
とも、従来の液体急冷法ではできなかった。However, Ta-
The 5i-B amorphous alloy has a shape with a width of several mm to several cm.
Because of the ribbon shape, there was a problem in that it was not possible to obtain an amorphous alloy with a wide area. moreover,
It has also not been possible to form the amorphous alloy in the form of a thin film on a certain substance using conventional liquid quenching methods.
本発明は、このような従来技術の問題点を解決して、高
い結晶化温度を有し、かつ、機械的特性、耐食性等にす
ぐれたＴａ系非晶質合金薄膜の製造方法を提供すること
を目的とする。The present invention solves the problems of the prior art and provides a method for producing a Ta-based amorphous alloy thin film that has a high crystallization temperature and has excellent mechanical properties, corrosion resistance, etc. With the goal.
（問題点を解決するための手段）
本発明は、Ｔａ１−Ｘ（８１１−ｙＢｙ）ｘなる式で表
され、ｘ＝０．１〜０．４、ｙ＝ｏ、ｏ１〜０．９９で
ある合金を、真空中において、金属を加熱溶解し、金属
原子を蒸発させることによって、基板上に付着させ、非
晶質薄膜を形成することを特徴とするＴａ系非晶質合金
薄膜の製造方法である。(Means for Solving the Problems) The present invention is expressed by the formula Ta1-X(811-yBy)x, where x=0.1-0.4, y=o, o1-0.99. A method for producing a Ta-based amorphous alloy thin film, which comprises depositing the alloy on a substrate by heating and melting the metal in a vacuum and evaporating the metal atoms to form an amorphous thin film. be.
（作用）
Ｔａ −Ｓｉ −Ｂ系合金では、後に実施例で示すよう
に、Ｔａが６０ａｔ％〜９０ａｔ％の組成範囲で、非晶
質合金ができることを本発明者は見いだした。この組成
範囲をはずれると非晶質構造がほとんどみられなくなり
、非晶質合金に特徴的な優れた特性がすべて消失してし
まう。また、ｙの範囲を０．０１〜０．９９と限定した
のは、この範囲において、ＳｉまたはＢを微量添加した
場合や、いずれか一方だけを添加した場合よりも結晶化
温度が高くなるからである。これらの非晶質合金の結晶
化温度は、その融点の高さに対応して、いずれも８００
’Ｃ以上という高い値である。また、これらの非晶質合
金の機械的特性は、非晶質合金に一般にみちれるように
、高強度かつ高硬度である。また、耐食性においても、
Ｔａのすぐれた耐食性に匹敵するほどの耐食性を有して
いる。(Function) As shown in Examples later, the present inventors have discovered that an amorphous alloy can be formed in a Ta-Si-B alloy with a Ta content in the composition range of 60 at% to 90 at%. When the composition is outside this range, almost no amorphous structure is observed, and all the excellent properties characteristic of amorphous alloys are lost. In addition, the reason why the range of y is limited to 0.01 to 0.99 is because in this range, the crystallization temperature will be higher than when a trace amount of Si or B is added, or when only one of them is added. It is. The crystallization temperatures of these amorphous alloys are all 800°C, corresponding to their high melting points.
It is a high value of 'C or higher. Further, the mechanical properties of these amorphous alloys are high strength and high hardness, as is generally the case with amorphous alloys. In addition, in terms of corrosion resistance,
It has corrosion resistance comparable to that of Ta.
本発明による製造方法は、真空中において、金属を加熱
溶解して、金属原子を蒸発させることによって、基板上
に付着させ、非晶質薄膜を形成する方法であるが、この
際、原料合金の溶解を水冷されたるつぼのなかで行うの
で、原料合金とるつぼ金属の反応はほとんどおこらない
。るつぼ金属が十分に冷却されている場合には、たとえ
高温度の溶解金属が接触したとしても、るつぼ金属の温
度が低すぎるために合金化反応が極めて起こりにくいか
らである。The manufacturing method according to the present invention is a method in which a metal is heated and melted in a vacuum to evaporate metal atoms, thereby depositing them on a substrate to form an amorphous thin film. Since melting is carried out in a water-cooled crucible, there is almost no reaction between the raw material alloy and the crucible metal. This is because if the crucible metal is sufficiently cooled, even if high-temperature molten metal comes into contact with it, the temperature of the crucible metal is too low and alloying reactions are extremely unlikely to occur.
また、基板は、水、液体窒素等の冷媒によって、冷却し
ておく必要がある。これは、薄膜作製中の基板温度が高
すぎると、形成された合金薄膜が、結晶質になってしま
い、非晶質相が得られないからである。Further, the substrate needs to be cooled with a coolant such as water or liquid nitrogen. This is because if the substrate temperature during thin film production is too high, the formed alloy thin film will become crystalline and an amorphous phase will not be obtained.
さらに、溶解手段としては、電子ビーム溶解、レーザー
ビーム溶解などのよく知られた方法を用いることができ
る。Further, as the melting means, well-known methods such as electron beam melting and laser beam melting can be used.
また、溶解される原料物質としては、目的組成のＴａ
−Ｓｉ −Ｂ合金、またはＴａ５ＳｉおよびＢを別々に
準備することができる。Ｔａ −Ｓｉ −Ｂ合金の場合
には、この合金を溶解することによって、また、Ｔａ、
ＳｉおよびＢを別々に準備する場合には、それぞれを
同時に別個に溶解することによって、薄膜を形成するこ
とができる。また、得られる合金薄膜の組成は、原料と
なるＴａ −Ｓｉ −Ｂ合金の組成を変化させることに
より、また、Ｔａ、 ＳｉおよびＢの蒸気圧を調整する
ことにより、容易に変化させることが出来るため、目的
とする組成の非晶質合金薄膜を容易に得ることができる
。In addition, the raw material to be dissolved is Ta of the desired composition.
-Si-B alloy or Ta5Si and B can be prepared separately. In the case of Ta-Si-B alloy, by melting this alloy, Ta,
When Si and B are prepared separately, a thin film can be formed by separately melting each at the same time. Furthermore, the composition of the obtained alloy thin film can be easily changed by changing the composition of the Ta-Si-B alloy used as the raw material and by adjusting the vapor pressures of Ta, Si, and B. Therefore, an amorphous alloy thin film having a desired composition can be easily obtained.
以上のように、本発明の製造方法によって、Ｔａ系非晶
質合金は、組成制御された、高純度の合金薄膜として、
大面積に、かつ、均質に、基板上に形成することができ
る。As described above, by the production method of the present invention, a Ta-based amorphous alloy can be produced as a high-purity alloy thin film with controlled composition.
It can be uniformly formed over a large area on a substrate.
（実施例）
以下、本発明の一実施例を図により詳細に説明する。第
１図に、本発明のＴａ系非晶質合金薄膜を作製する装置
の一例を示す。第１図に示す装置は高真空電子ビーム蒸
着装置である。蒸発材料１，２は、それぞれるつぼ３，
４に保持されている。本実施例においては、蒸発材料１
にはＴａ、また、蒸発材料２には、Ｔａ −Ｓｉ −Ｂ
合金を使用した。各蒸発材料は、るつぼ中に５０ｇ準備
することができる。るつぼ３，４は銅製であり、冷却水
導入管５によって、水冷されており、蒸発材料が溶解し
た状態においても、温度が上昇することはない。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an example of an apparatus for producing the Ta-based amorphous alloy thin film of the present invention. The apparatus shown in FIG. 1 is a high vacuum electron beam evaporation apparatus. Evaporated materials 1 and 2 are placed in crucibles 3 and 2, respectively.
It is held at 4. In this example, the evaporation material 1
Ta is used for the evaporation material 2, and Ta-Si-B is used for the evaporation material 2.
Alloy was used. 50 g of each evaporated material can be prepared in a crucible. The crucibles 3 and 4 are made of copper and are water-cooled by a cooling water introduction pipe 5, so that the temperature does not rise even when the evaporation material is dissolved.
基板６は、基板ホルダー７に固定されて゛いる。基板に
は、長さ５０ｍｍ、幅２５ｍｍで厚さＱ、２ｍｍのガラ
スを用いた。基板ホルダー７には、液体窒素導入管８よ
り導入された液体窒素９が蓄えられており、基板が十分
冷却される構造になっている。The substrate 6 is fixed to a substrate holder 7. The substrate used was glass with a length of 50 mm, a width of 25 mm, and a thickness Q of 2 mm. The substrate holder 7 stores liquid nitrogen 9 introduced from a liquid nitrogen introduction pipe 8, and has a structure in which the substrate is sufficiently cooled.
薄膜作製に際しては、最初に、真空チャンバー１０を真
空ポンプ１１によって、１Ｏ−８Ｔｏｒｒ台の真空まで
排気する。この状態で、電子ビーム源１２．１３より、
電子ビームを発生させ、蒸発材料１，２を同時に加熱、
溶解させる。溶解した材料からは、Ｔａ、ＳｉおよびＢ
が原子状態で蒸発する。蒸着の最初１時間は、シャッタ
ー１４を閉じた状態で予備蒸着を行う。つぎに、予備蒸
着終了後、シャッターを開くことにより、基板上に薄膜
を作製した。蒸発材料１および２から飛び出した蒸発原
子は、基板付近でお互いに混合状態になり、基板に付着
する際には、均質な合金として付着する。薄膜作製中の
真空度は、１Ｏ−７Ｔｏｒｒであった。また、薄膜作製
中の基板温度を熱電対１５を通して、温度計１６によっ
て測定したところ、−１８０°Ｃであった。蒸着は、１
時間行った。得られた薄膜の厚さは、５ｐｍ程度であっ
た。When producing a thin film, first, the vacuum chamber 10 is evacuated to a vacuum level of 10-8 Torr using the vacuum pump 11. In this state, from the electron beam source 12.13,
Generate an electron beam to simultaneously heat the evaporation materials 1 and 2,
Dissolve. From the melted material, Ta, Si and B
evaporates in atomic state. During the first hour of vapor deposition, preliminary vapor deposition is performed with the shutter 14 closed. Next, after the preliminary vapor deposition was completed, a thin film was produced on the substrate by opening the shutter. The evaporated atoms ejected from the evaporation materials 1 and 2 are mixed with each other near the substrate, and when they adhere to the substrate, they adhere as a homogeneous alloy. The degree of vacuum during thin film preparation was 10-7 Torr. Moreover, when the substrate temperature during thin film production was measured by the thermometer 16 through the thermocouple 15, it was -180°C. Vapor deposition is 1
Time went. The thickness of the obtained thin film was about 5 pm.
得られたＴａ −Ｓｉ −Ｂ合金薄膜の構造をＸ線回折
法によって評価した。その結果、薄膜の組成でＴａが６
０ａｔ％〜９０ａｔ％の組成範囲ではいずれの薄帯も結
晶）、
による鋭い回折ピークはみられず、ブロードなハローパ
ターンが得られたことから、非晶質合金薄膜が得られた
ことが確認された。第１表に、示差熱分析で測定したこ
れらの試料の結晶化温度を示す。いずれも８００°Ｃ以
上の高い結晶化温度を示している。また、これらの試料
の機械的特性は、ビッカース硬度が８００〜１５００の
範囲であるという優れた性質を示した。さらに、これら
の試料は濃塩酸、濃硝酸、濃硫酸、濃王水の中に一日放
置しても何等腐食された様子は見られず、重量変化も認
めら・・−９パ＼
第１表
なお、本実施例では、高真空電子ビーム蒸着装置による
Ｔａ系非晶質合金薄膜の製造方法を紹介したが、非晶質
薄膜を作製する際に、他の蒸着方法、即ち、レーザービ
ーム蒸着法、クラスターイオンビーム蒸着法等を利用し
てもさしつがえない。The structure of the obtained Ta-Si-B alloy thin film was evaluated by X-ray diffraction method. As a result, the composition of the thin film showed that Ta was 6
In the composition range of 0 at % to 90 at %, no sharp diffraction peaks were observed in any of the ribbons (crystalline), and a broad halo pattern was obtained, confirming that an amorphous alloy thin film was obtained. Ta. Table 1 shows the crystallization temperatures of these samples determined by differential thermal analysis. All exhibit high crystallization temperatures of 800°C or higher. Moreover, the mechanical properties of these samples showed excellent properties with Vickers hardness ranging from 800 to 1500. Furthermore, even when these samples were left in concentrated hydrochloric acid, concentrated nitric acid, concentrated sulfuric acid, and concentrated aqua regia for a day, no signs of corrosion were observed, and no change in weight was observed... In this example, a method for producing a Ta-based amorphous alloy thin film using a high-vacuum electron beam evaporation apparatus was introduced. However, when producing an amorphous thin film, other evaporation methods, such as laser beam evaporation It is also possible to use a method such as a cluster ion beam evaporation method or a cluster ion beam evaporation method.
（発明の効果）
以上詳細に説明したように、本発明によるＴａ系非晶質
合金薄膜の製造方法は高い結晶化温度を有し、かつ、機
械的特性、耐食性等にすぐれた非晶質合金薄膜が容易に
得られ、その効果は大きい。(Effects of the Invention) As explained in detail above, the method for producing a Ta-based amorphous alloy thin film according to the present invention is an amorphous alloy that has a high crystallization temperature and has excellent mechanical properties, corrosion resistance, etc. A thin film can be easily obtained and the effect is great.
第１図は、本発明のＴａ系非晶質合金薄膜を作製する装
置の一例を示す図である。図において、１および２は蒸
発材料、３および４はるつぼ、５は冷却水導入管、６は
基板、７は基板ホルダー、８は液体窒素導入管、９は液
体窒素、１０はチャンバー、１１は真空ポンプ、１２お
よび１３は電子ビーム源、１４はシャツ；７１ 図FIG. 1 is a diagram showing an example of an apparatus for producing a Ta-based amorphous alloy thin film of the present invention. In the figure, 1 and 2 are evaporation materials, 3 and 4 are crucibles, 5 is a cooling water introduction pipe, 6 is a substrate, 7 is a substrate holder, 8 is a liquid nitrogen introduction pipe, 9 is liquid nitrogen, 10 is a chamber, and 11 is a Vacuum pump, 12 and 13 electron beam source, 14 shirt; 71 Figure
Claims (1)
式で表され、ｘ＝０．１〜０．４、ｙ＝０．０１〜０．
９９である組成の合金を、真空中において、金属を加熱
溶解し、該金属原子を蒸発させることによって、基板上
に薄膜を形成する真空蒸着装置を用いて、非晶質化させ
ることを特徴とするＴａ系非晶質合金薄膜の製造方法。It is expressed by the formula Ta_1_-_x(Si_1_-_yB_y)_x, where x=0.1-0.4, y=0.01-0.
99 is made amorphous using a vacuum evaporation device that forms a thin film on a substrate by heating and melting the metal in a vacuum and evaporating the metal atoms. A method for producing a Ta-based amorphous alloy thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277151A JPS63130768A (en) | 1986-11-19 | 1986-11-19 | Production of thin ta amorphous alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277151A JPS63130768A (en) | 1986-11-19 | 1986-11-19 | Production of thin ta amorphous alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63130768A true JPS63130768A (en) | 1988-06-02 |
Family
ID=17579510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61277151A Pending JPS63130768A (en) | 1986-11-19 | 1986-11-19 | Production of thin ta amorphous alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63130768A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5499035A (en) * | 1972-12-26 | 1979-08-04 | Allied Chem | Noncrystalline metal wire |
-
1986
- 1986-11-19 JP JP61277151A patent/JPS63130768A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5499035A (en) * | 1972-12-26 | 1979-08-04 | Allied Chem | Noncrystalline metal wire |
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