JPS63125663A - Production of thin amorphous ta-w alloy film - Google Patents
Production of thin amorphous ta-w alloy filmInfo
- Publication number
- JPS63125663A JPS63125663A JP27017986A JP27017986A JPS63125663A JP S63125663 A JPS63125663 A JP S63125663A JP 27017986 A JP27017986 A JP 27017986A JP 27017986 A JP27017986 A JP 27017986A JP S63125663 A JPS63125663 A JP S63125663A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- amorphous
- substrate
- thin film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 27
- 239000000956 alloy Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 27
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 9
- 239000013077 target material Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 12
- 238000002425 crystallisation Methods 0.000 abstract description 12
- 230000008025 crystallization Effects 0.000 abstract description 12
- 239000007788 liquid Substances 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 229910001080 W alloy Inorganic materials 0.000 abstract description 3
- 239000000498 cooling water Substances 0.000 abstract description 3
- 229910008938 W—Si Inorganic materials 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は高い結晶化温度を有するＴａ−Ｗ系非晶質合金
の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for producing a Ta--W amorphous alloy having a high crystallization temperature.
（従来の技術）
近年、各種の非晶質材料が開発され、金属材料の分野に
おいて、多くの注目を集めている。これらの合金は、従
来の結晶合金とは異なり、結晶構造を持たない合金であ
り、その性質も従来の金属材料にはみちれないものが多
く、機械的性質、耐摩耗性、耐食性、軟磁性、電気的性
質などに優れているため、結晶質金属に代わりうる材料
として、各種の用途開発が行われ、さらに、その用途に
適した材料開発も行われている。これらの合金は、従来
、一般に、単ロール法等の液体急冷法によって作製され
ている。(Prior Art) In recent years, various amorphous materials have been developed and are attracting a lot of attention in the field of metal materials. Unlike conventional crystalline alloys, these alloys do not have a crystal structure, and many of their properties are not found in conventional metal materials, such as mechanical properties, wear resistance, corrosion resistance, and soft magnetism. Due to its excellent electrical properties, various uses are being developed as a material that can replace crystalline metals, and materials suitable for these uses are also being developed. These alloys have conventionally been generally produced by a liquid quenching method such as a single roll method.
（発明が解決しようとする問題点）
非晶質合金の最大の問題点は、熱的に不安定な点にある
。これは非晶質状態が熱力学的に非平衡な準安定状態で
あるということに由来するもので、非晶質合金の宿命と
もいえることである。即ち、非晶質合金は、一般に、そ
れぞれ特有の結晶化温度を有し、その温度を越えるとよ
り熱的に安定な結晶合金に変化してしまい、非晶質状態
のときにみられた優れた緒特性が全て失われてしまうの
である。この結晶化温度は、材料によって異なるが、一
般に、絶対温度で測定した融点の０．４〜０゜６倍程度
の値をとることが知られている。従って、結晶化温度の
高い合金を得るためには、融点の高い合金を非晶質化し
なければならない。(Problems to be Solved by the Invention) The biggest problem with amorphous alloys is that they are thermally unstable. This is due to the fact that the amorphous state is a thermodynamically non-equilibrium metastable state, and can be said to be the fate of amorphous alloys. In other words, each amorphous alloy generally has its own specific crystallization temperature, and when that temperature is exceeded, it changes to a more thermally stable crystalline alloy, and the superiority seen in the amorphous state is lost. All of the cord characteristics are lost. Although this crystallization temperature varies depending on the material, it is generally known to take a value of about 0.4 to 0.6 times the melting point measured in absolute temperature. Therefore, in order to obtain an alloy with a high crystallization temperature, an alloy with a high melting point must be made amorphous.
Ｔａ−８ｉ−Ｂ合金は、融点が約２３００８Ｃ以上とき
わめて高い。このため液体急冷法によって作製されたＴ
ａ−８ｉ−Ｂ系非晶質合金は、その結晶化温度が８００
°Ｃ〜１０００°Ｃと非常に高く、非晶質合金の問題点
を大幅に改善することが可能となった（特願昭６１−０
１２３８５号）。さらに、このＴａ−８ｉ−Ｂ系非晶質
合金は、一般の非晶質合金に特有の高強度、高硬度など
の優れた機械的性質を有しているために、例えば、耐摩
耗性材料、および、温度上昇を伴う電極用材料などへの
応用が考えられる。The Ta-8i-B alloy has an extremely high melting point of about 23008C or higher. For this reason, T
The a-8i-B amorphous alloy has a crystallization temperature of 800
°C to 1000 °C, making it possible to significantly improve the problems of amorphous alloys (Patent Application 1986-0
No. 12385). Furthermore, this Ta-8i-B amorphous alloy has excellent mechanical properties such as high strength and high hardness that are characteristic of general amorphous alloys, so it can be used as a wear-resistant material, for example. It can also be applied to materials for electrodes that are subject to temperature increases.
しかしながら、実際に前記Ｔａ−８ｉ−Ｂ系非晶質合金
を高温環境下で使用する場合には、経時変化が問題とな
ってくるために、使用温度範囲は最高６００°Ｃ程度に
限定されてしまう。However, when the Ta-8i-B amorphous alloy is actually used in a high-temperature environment, aging becomes a problem, so the operating temperature range is limited to a maximum of about 600°C. Put it away.
さらに、液体急冷法によって作製されるＴａ−８ｉ−Ｂ
系非晶質合金は、その形状が幅数ｍｍ〜数ｃｍのリボン
状であるために、広い面積を有する非晶質合金を得るこ
とができないという問題点があった。Furthermore, Ta-8i-B produced by liquid quenching method
Since the amorphous alloy has a ribbon shape with a width of several mm to several cm, there is a problem in that it is impossible to obtain an amorphous alloy having a wide area.
さらに、ある物質の上に、前記非晶質合金を薄膜状で形
成することも、従来の液体急冷法ではできなかった。Furthermore, it has not been possible to form the amorphous alloy in the form of a thin film on a certain substance using conventional liquid quenching methods.
本発明は、このような従来技術の問題点を解決して、結
晶化温度が高く、前記Ｔａ系非晶質合金よりもさらに高
温環境に耐えることができ、がっ、機械的特性、耐食性
等にすぐれたＴａ−Ｗ系非晶質合金薄膜の製造方法を提
供することを目的とする。The present invention solves the problems of the prior art, has a high crystallization temperature, can withstand a higher temperature environment than the Ta-based amorphous alloy, and has excellent mechanical properties, corrosion resistance, etc. It is an object of the present invention to provide a method for manufacturing a Ta-W based amorphous alloy thin film having excellent properties.
（問題点を解決するための手段）
本発明は、（Ｔａｌ−ｘＷｘ）１、−ｙＳｉｙなる式で
表され、ｘ＝ｏ、０１〜１、ｙ＝０．１〜０，４である
合金を、ターゲット物質にイオンを衝突させ、前記ター
ゲット物質をガス状態で飛び出させることにより、基板
上に薄膜を形成することによって、非晶質化することを
特徴とするＴａ−Ｗ系非晶質合金薄膜の製造方法である
。(Means for Solving the Problems) The present invention provides an alloy represented by the formula (Tal-xWx)1, -ySiy, where x=o, 01-1, y=0.1-0,4. , a Ta-W based amorphous alloy thin film characterized in that it is made amorphous by forming a thin film on a substrate by bombarding a target material with ions and causing the target material to fly out in a gaseous state. This is a manufacturing method.
（作用）
Ｔａ−Ｗ−８ｉ系合金薄膜では、後に実施例で示すよう
に、ＴａとＷ、または、Ｗが６０ａｔ％−９０ａｔ％の
組成範囲で、非晶質合金ができることを本発明者は初め
て見いだした。この組成範囲をはずれると非晶質構造が
ほとんどみちれなくなり、非晶質合金に特徴的な優れた
特性がすべて消失してしまう。また、Ｘの範囲を０．０
１以上と限定したのは、この範囲において、Ｔａのみの
場合、および、Ｗを微量添加した場合よりも結晶化温度
が高くなるがらである。(Function) In the Ta-W-8i alloy thin film, as shown in Examples later, the present inventors have found that an amorphous alloy can be formed in the composition range of Ta and W or W in the range of 60 at% to 90 at%. I found it for the first time. When the composition is outside this range, the amorphous structure becomes almost invisible, and all the excellent properties characteristic of amorphous alloys are lost. Also, set the range of X to 0.0
The reason why it is limited to 1 or more is that in this range, the crystallization temperature becomes higher than when only Ta is used or when a small amount of W is added.
これらの非晶質合金の結晶化温度は、その融点の高さに
対応して、いずれも１０００００以上という高い値であ
る。また、これらの非晶質合金の機械的特性は、非晶質
合金に一般にみられるように、高硬度である。また、耐
食性においても、ＴａおよびＷのすぐれた耐食性に匹敵
するほどの耐食性を有している。The crystallization temperatures of these amorphous alloys are all as high as 100,000 or higher, corresponding to their high melting points. Additionally, the mechanical properties of these amorphous alloys are high hardness, as is generally seen in amorphous alloys. Also, in terms of corrosion resistance, it has corrosion resistance comparable to that of Ta and W.
本発明による製造方法は、アルゴンガス等の気体原子ま
たは分子を高電界または高周波電界中でイオン化し、さ
らに電界によって加速することにより、ターゲット表面
に衝突させて、ターゲット物質をターゲット表面がらた
たき出して、基板上に薄膜を形成するため、大面積で、
がっ、均質な合金薄膜を形成することが出来る。In the manufacturing method according to the present invention, gas atoms or molecules such as argon gas are ionized in a high electric field or a high-frequency electric field, and further accelerated by the electric field to cause them to collide with the target surface and knock out the target material from the target surface. Because a thin film is formed on the substrate, it can be applied over a large area.
However, it is possible to form a homogeneous alloy thin film.
また、ターゲット物質としては、目的組成のＴａ−Ｗ−
８ｉ三元系合金、あるいは、Ｔａ、ＷおよびＳｉを適当
な面積比で組み合わせた複合物質を利用する。このため
、得られる合金薄膜の組成は、ターゲット合金の組成を
変化させることにより、また、複合物質の面積比を適当
に変化させることにより、容易に変化させることが出来
るため、目的とする組成の非晶質合金薄膜を容易に得る
ことができる。In addition, as a target material, Ta-W-
An 8i ternary alloy or a composite material in which Ta, W and Si are combined in an appropriate area ratio is used. Therefore, the composition of the obtained alloy thin film can be easily changed by changing the composition of the target alloy or by appropriately changing the area ratio of the composite material, so that the desired composition can be changed. Amorphous alloy thin films can be easily obtained.
（実施例）
以下、本発明の一実施例を図により詳細に説明する。第
１図に、本発明のＴａ−Ｗ系非晶質合金薄膜を作製する
装置の一例を示す。第１図に示す装置は高周波二極マグ
ネトロンスパッタ装置であり、図において、１はターゲ
ット、２は基板である。ターゲット１は本実施例におい
て、複合ターゲットを用いた。即ち、直径１００ｍｍ、
厚さ５ｍｍのＴａターゲットのうえに、−辺１０ｍｍの
正方形で厚さ１ｍｍのＷ、およびＳｉの板を適当な枚数
だけおいた。この際、Ｔａターゲットの」二に、Ｗ、お
よびＳｉの板がなるべく均一に分布するように設定した
。Ｗ、およびＳｉの枚数を変化させることにより、得ら
れる合金薄膜の組成を変化させた。基板２には、長さ５
０ｍｍ、幅２５ｍｍで゛厚さ０．２ｍｍのガラスを用い
た。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an example of an apparatus for producing the Ta--W amorphous alloy thin film of the present invention. The apparatus shown in FIG. 1 is a high-frequency dipole magnetron sputtering apparatus, and in the figure, 1 is a target and 2 is a substrate. As target 1, a composite target was used in this example. That is, the diameter is 100 mm,
An appropriate number of W and Si plates each having a square shape with a side of 10 mm and a thickness of 1 mm were placed on a Ta target with a thickness of 5 mm. At this time, the W and Si plates were set to be distributed as uniformly as possible on the second side of the Ta target. By changing the number of W and Si sheets, the composition of the resulting alloy thin film was changed. Board 2 has a length of 5
Glass with a width of 25 mm and a thickness of 0.2 mm was used.
薄膜作成に際しては、最初にバルブ５を開いて、真空チ
ャンバー３を真空ポンプ４によって、１０−７Ｔｏｒｒ
台の真空まで排気する。この後、バリアプルリークバル
ブ６を開いて、アルゴンガス導入管７よりアルゴンガス
を１０＝Ｔｏｒｒ台になるまで導入する。この状態で高
周波電源８の電源を入れることにより、スパッタを開始
させる。投入電力は５００Ｗとした。このとき、ターゲ
ット１は、冷却水導入管１０によって水冷されている。When creating a thin film, first open the valve 5 and use the vacuum pump 4 to heat the vacuum chamber 3 to 10-7 Torr.
Evacuate the table to vacuum. Thereafter, the barrier pull leak valve 6 is opened, and argon gas is introduced from the argon gas introduction pipe 7 until the pressure reaches 10 Torr level. In this state, the high frequency power source 8 is turned on to start sputtering. The input power was 500W. At this time, the target 1 is water-cooled by the cooling water introduction pipe 10.
また、基板２は、液体窒素導入管１１によって導入され
た液体窒素１２によって、室温以下に冷却されている。Further, the substrate 2 is cooled to below room temperature by the liquid nitrogen 12 introduced by the liquid nitrogen introduction pipe 11.
これは、Ｔａ−Ｗ系合金薄膜を非晶質化するためには、
水、液体窒素等の冷媒で基板を冷却する必要があるため
である。基板温度を熱電対１４を通して、温度計１５に
よって測定すると、−１８０°Ｃまで冷却されているこ
とがわかった。スパッタの最初の１時間は、シャッター
９を閉じて、プレスパツタを行った。本スパッタ装置は
、ターゲットの裏側に、永久磁石１３が取り付けられて
おり、これがターゲット表面に作る磁場によって、高速
スパッタが行えるようになっている。プレスパツタ終了
後、シャッター９を開いて、基板上に薄膜を作製した。This means that in order to make the Ta-W alloy thin film amorphous,
This is because the substrate needs to be cooled with a coolant such as water or liquid nitrogen. When the substrate temperature was measured by the thermometer 15 through the thermocouple 14, it was found that the substrate was cooled down to -180°C. For the first hour of sputtering, the shutter 9 was closed and press sputtering was performed. In this sputtering apparatus, a permanent magnet 13 is attached to the back side of the target, and high-speed sputtering can be performed by the magnetic field created by this on the target surface. After the press sputtering was completed, the shutter 9 was opened to form a thin film on the substrate.
薄膜作製は、１時間行った。得られた薄膜の厚さは、５
ｐｍ程度であった。Thin film preparation was performed for 1 hour. The thickness of the obtained thin film was 5
It was about pm.
得られたＴａ−Ｗ−８ｉ合金薄膜の構造をＸ線回折法に
よって評価した。その結果、薄膜の組成でＴａとＷ、お
よび、Ｗが６０ａｔ％〜９０ａｔ％の組成範囲では、い
ずれの薄膜も結晶による鋭い回折ピークはみられず、ブ
ロードなハローパターンが得られたことから、非晶質合
金薄膜が得られたことが確認された。第１表に、示差熱
分析で測定したこれらの試料の結晶化温度を示す。いず
れの試料も１０００°Ｃ以上の高い結晶化温度を示して
おり、Ｔａ−８ｉ−Ｂ系非晶質合金の場合よりもさらに
１００°Ｃ〜２００°Ｃ高い結晶化温度を有しているこ
とがわかる。また、これらの試料は、８００°Ｃで１０
００時間焼鈍した後も非晶質構造を維持しており、非常
に耐熱性の高い非晶質合金であることが判明した。さら
に、これらの試料の機械的特性は、ビッカース硬度が９
００〜１６００の範囲であるという優れた性質を示した
。さらに、これらの試料は濃塩酸、濃硝酸、濃硫酸、濃
王水の中に一日放置しても何ら腐食された様子も見られ
ず、第１表
なお、本実施例では、高周波二極マグネトロンスパッタ
装置によるＴａ−Ｗ系非晶質合金薄膜の製造方法を紹介
したが、非晶質薄膜を作製する際に、他のスパッタ方法
、即ち、通常の直流二極スパッタ法、高周波二極スパッ
タ法、三極あるいは四極スパッタ法、バイアススパッタ
法、イオンビームスパッタ法、反応性スパッタ法等を利
用してもさしつがえない。The structure of the obtained Ta-W-8i alloy thin film was evaluated by X-ray diffraction method. As a result, in the thin film compositions of Ta and W, and in the composition range of 60 at% to 90 at% W, no sharp diffraction peaks due to crystals were observed in any of the thin films, and a broad halo pattern was obtained. It was confirmed that an amorphous alloy thin film was obtained. Table 1 shows the crystallization temperatures of these samples determined by differential thermal analysis. All samples show a high crystallization temperature of 1000°C or more, which is 100°C to 200°C higher than that of the Ta-8i-B amorphous alloy. I understand. Also, these samples were heated at 800°C for 10
It was found that the amorphous alloy maintains its amorphous structure even after being annealed for 00 hours, and is an amorphous alloy with extremely high heat resistance. Furthermore, the mechanical properties of these samples have a Vickers hardness of 9
It showed excellent properties in the range of 00 to 1600. Furthermore, these samples showed no signs of corrosion even after being left in concentrated hydrochloric acid, concentrated nitric acid, concentrated sulfuric acid, and concentrated aqua regia for a day. Although we have introduced a method for producing a Ta-W amorphous alloy thin film using a magnetron sputtering device, other sputtering methods, such as normal DC dipole sputtering and high-frequency dipole sputtering, are recommended when producing an amorphous thin film. It is also possible to use a sputtering method, a triode or quadrupole sputtering method, a bias sputtering method, an ion beam sputtering method, a reactive sputtering method, etc.
（発明の効果）
以上詳細に説明したように、本発明によるＴａ−Ｗ系非
晶質合金薄膜の製造方法は高い結晶化温度を有し、かつ
、機械的特性、耐食性等にすぐれた非晶質合金薄膜が容
易に得られ、その効果は大きい。(Effects of the Invention) As explained in detail above, the method for producing a Ta-W amorphous alloy thin film according to the present invention has a high crystallization temperature and an amorphous film with excellent mechanical properties, corrosion resistance, etc. A high quality alloy thin film can be easily obtained, and the effect is great.
第１図は、本発明のＴａ−Ｗ系非晶質合金薄膜を作製す
る装置の一例を示す図である。図において、１はターゲ
ット、２は基板、３はチャンバー、４は真空ポンプ、５
は真空バルブ、６はバリアプルリークバルブ、７はアル
ゴンガス導入管、８は高周波型源、９はシャッター、１
０はターゲット用冷却水導入管、１１は基板冷却用液体
窒素導入管、１２は液体窒素、１３は永久磁石、１４は
熱電対、１５は温度計である。FIG. 1 is a diagram showing an example of an apparatus for producing a Ta-W based amorphous alloy thin film of the present invention. In the figure, 1 is a target, 2 is a substrate, 3 is a chamber, 4 is a vacuum pump, and 5
is a vacuum valve, 6 is a barrier pull leak valve, 7 is an argon gas introduction tube, 8 is a high frequency source, 9 is a shutter, 1
0 is a target cooling water introduction pipe, 11 is a liquid nitrogen introduction pipe for cooling the substrate, 12 is liquid nitrogen, 13 is a permanent magnet, 14 is a thermocouple, and 15 is a thermometer.
Claims (1)
式で表され、ｘ＝０．０１〜１、ｙ＝０．１〜０．４で
ある組成の合金を、ターゲット物質にイオンを衝突させ
、前記ターゲット物質をガス状態で飛び出させることに
より、基板上に薄膜を形成するスパッタ装置を用いて、
非晶質化させることを特徴とするＴａ−Ｗ系非晶質合金
薄膜の製造方法。An alloy represented by the formula (Ta_1_-_xW_x)_1_-_ySi_y and having a composition of x=0.01 to 1 and y=0.1 to 0.4 is bombarded with ions against a target material, and the target material is Using a sputtering device that forms a thin film on a substrate by ejecting it in a gaseous state,
A method for producing a Ta-W based amorphous alloy thin film, which is characterized by making it amorphous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27017986A JPS63125663A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27017986A JPS63125663A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63125663A true JPS63125663A (en) | 1988-05-28 |
| JPH0581668B2 JPH0581668B2 (en) | 1993-11-15 |
Family
ID=17482623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27017986A Granted JPS63125663A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta-w alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63125663A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165761A (en) * | 1987-12-22 | 1989-06-29 | Mitsui Eng & Shipbuild Co Ltd | Member ensuring slight friction, seizing resistance and slight wear in atmosphere |
| JPH0253483A (en) * | 1988-08-19 | 1990-02-22 | Teijin Ltd | Culture of adhesive animal cell |
| US20170218492A1 (en) * | 2014-07-30 | 2017-08-03 | Hewlett- Packard Development Company, L.P . | Wear resistant coating |
-
1986
- 1986-11-12 JP JP27017986A patent/JPS63125663A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01165761A (en) * | 1987-12-22 | 1989-06-29 | Mitsui Eng & Shipbuild Co Ltd | Member ensuring slight friction, seizing resistance and slight wear in atmosphere |
| JPH0253483A (en) * | 1988-08-19 | 1990-02-22 | Teijin Ltd | Culture of adhesive animal cell |
| US20170218492A1 (en) * | 2014-07-30 | 2017-08-03 | Hewlett- Packard Development Company, L.P . | Wear resistant coating |
| US10676806B2 (en) | 2014-07-30 | 2020-06-09 | Hewlett-Packard Development Company, L.P. | Wear resistant coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0581668B2 (en) | 1993-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100499173B1 (en) | Method of making low magnetic permeability cobalt sputter targets | |
| JP4296256B2 (en) | Manufacturing method of superconducting material | |
| Wu et al. | Crystallization behavior of rf-sputtered near stoichiometric Ni2MnGa thin films | |
| JPH0569892B2 (en) | ||
| JPS63125663A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63125665A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63125670A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63125664A (en) | Production of thin amorphous ta alloy film | |
| CN111304622B (en) | Method for controllably preparing superlattice Sb-Te/Bi-Sb-Te multilayer film by adopting ion-assisted alternate deposition | |
| Qing-Ming et al. | Amorphization of binary alloys by magnetron cosputtering | |
| JPS63130767A (en) | Production of thin ta amorphous alloy film | |
| JPS63125662A (en) | Production of thin amorphous ta alloy film | |
| JPS63125669A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63130766A (en) | Production of thin ta amorphous alloy film | |
| US3475309A (en) | Method of making paramagnetic nickel ferrite thin films | |
| US3437577A (en) | Method of fabricating uniform rare earth iron garnet thin films by sputtering | |
| Zhang et al. | Nonequilibrium crystalline and amorphous Ti–Pd alloys produced by vapor quenching | |
| JPS63125667A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63125668A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63140509A (en) | Manufacture of magnetically soft film | |
| JPS63125666A (en) | Production of thin amorphous ta alloy film | |
| Navinšek | Stainless-steel, nickel and brass protective films produced by cathode sputtering | |
| JPS63130768A (en) | Production of thin ta amorphous alloy film | |
| JPS6350470A (en) | Sputtering device | |
| KR100190681B1 (en) | Method for producing mn-al thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |