JPS63124424A - Heating method for sample - Google Patents
Heating method for sampleInfo
- Publication number
- JPS63124424A JPS63124424A JP27010286A JP27010286A JPS63124424A JP S63124424 A JPS63124424 A JP S63124424A JP 27010286 A JP27010286 A JP 27010286A JP 27010286 A JP27010286 A JP 27010286A JP S63124424 A JPS63124424 A JP S63124424A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- heating
- temperature
- heated
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000126 substance Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000010586 diagram Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体ウェーハ等（以下試料という）の加熱方法の改良
である。[Detailed Description of the Invention] [Summary] This is an improvement in a heating method for semiconductor wafers, etc. (hereinafter referred to as samples).
温度を経時的に制御しながら試料を加熱するために、発
熱体と加熱される試料との間が完全には密着しておらず
いくらかのギャップが残されている加熱装置を使用し、
この加熱装置内の気圧を制御して上記のギャップにおけ
る熱伝導度を制御することにより、無駄時間なく高い応
答性をもって経時的に温度を変化させながらなす試料の
加熱方法である。In order to heat the sample while controlling the temperature over time, a heating device is used in which the heating element and the sample to be heated are not in complete contact with each other, leaving some gap,
This is a method of heating a sample while changing the temperature over time with high responsiveness without wasting time by controlling the air pressure inside the heating device and controlling the thermal conductivity in the gap.
本発明は試料の加熱方法の改良に関する。特に、無駄時
間なく高い応答性をもって経時的に温度を変化させなが
らなす試料の加熱方法である。The present invention relates to improvements in methods for heating samples. In particular, it is a method of heating a sample while changing the temperature over time with high responsiveness without wasting time.
従来、熱処理・ベーキング・アッシング等の目的をもっ
て半導体ウェーハ等（以下試料という。）を加熱するに
は、ホットプレート、オーブン、ファーネス等の加熱装
置が使用されているが、試料の加熱用に使用される加熱
装置の１例を図を参照して説明する。Conventionally, heating devices such as hot plates, ovens, and furnaces have been used to heat semiconductor wafers, etc. (hereinafter referred to as samples) for purposes such as heat treatment, baking, and ashing. An example of a heating device will be described with reference to the drawings.
第２図参照
図において、１は真空容器であり、給気管１１と排気管
１２とを有する。２は発熱体であり、真空容器ｌの壁面
に設けられる。３は半導体ウェー八等の試料４を支持す
る試料支持台である。Referring to FIG. 2, reference numeral 1 denotes a vacuum container, which has an air supply pipe 11 and an exhaust pipe 12. 2 is a heating element, which is provided on the wall of the vacuum container l. Reference numeral 3 denotes a sample support stand that supports a sample 4 such as a semiconductor wafer.
発熱体には電気抵抗を使用する物のほか、種々あるが、
いづれにせよ、加熱機能のみを有し、冷却機能は有しな
い場合が一般であり、しかも、自己の熱容量が大きいの
で、温度上昇速度に比し、温度下降速度は小さい。しか
も、構造的制約等もあり、発熱量を制御することは必ず
しも容易でなく、発熱量が一定である場合が一般である
。There are various types of heating elements, including those that use electrical resistance.
In any case, it generally has only a heating function and no cooling function, and since its own heat capacity is large, the rate of temperature decrease is small compared to the rate of temperature increase. Moreover, it is not always easy to control the amount of heat generated due to structural constraints and the like, and the amount of heat generated is generally constant.
半導体ウェーハ等の試料を加熱する場合、加熱温度を第
３図に示すように時間的に制御する必要がある場合が多
い。しかし、上記のとおり、試料加熱装置の発熱体は、
冷却機能を有することがなく、発熱量も一定であり、Ｏ
Ｎ・ＯＦＦ機能を有するのみであるから、正確に高レス
ポンスをもって無駄時間なく経時的温度変化をなすこと
は困難である。When heating a sample such as a semiconductor wafer, it is often necessary to temporally control the heating temperature as shown in FIG. However, as mentioned above, the heating element of the sample heating device is
It does not have a cooling function, the amount of heat generated is constant, and the O
Since it only has an N/OFF function, it is difficult to accurately change the temperature over time with high response and no wasted time.
本発明の目的は、この欠点を解消することにあり、無駄
時間をとなうこともなく、正確迅速に、半導体ウェーハ
等の試料を経時的に温度変化させながら加熱する方法を
提供することにある。The purpose of the present invention is to eliminate this drawback, and to provide a method for accurately and quickly heating a sample such as a semiconductor wafer while changing the temperature over time without wasting time. be.
上記の目的を達成するために本発明が採った手段は、発
熱体と半導体ウェーハ等の試料との間が完全には密着し
ておらず、その間にギャップが残されている試料加熱装
置の内圧を制御して、このギャップ内の熱伝導度を制御
しながら試料を加熱することにある。The means taken by the present invention to achieve the above object is based on the internal pressure of a sample heating device in which a heating element and a sample such as a semiconductor wafer are not in complete contact with each other, leaving a gap between them. The goal is to heat the sample while controlling the thermal conductivity within this gap.
熱の伝導形式には、伝導・対疏・輻射の工形式があるが
、本発明に係る試料の加熱方法においては、発熱体と被
加熱体との間のギャップ内の気体の圧力が制御されるの
で、伝導・対流にもとづく熱伝導率が容易・迅速に制御
でき、無駄時間をとなうこともなく、正確迅速に、半導
体ウェー八等の試料の温度を経時的に変化させながら加
熱することができる。Heat conduction methods include conduction, dielectric, and radiation methods, but in the sample heating method according to the present invention, the pressure of the gas in the gap between the heating element and the heated object is controlled. As a result, thermal conductivity based on conduction and convection can be controlled easily and quickly, and the temperature of samples such as semiconductor wafers can be heated accurately and quickly while changing the temperature over time without wasting time. be able to.
以下、図面を参照しつ〜、本発明の一実施例に係る試料
の加熱方法についてさらに説明する。Hereinafter, a method for heating a sample according to an embodiment of the present invention will be further described with reference to the drawings.
第１図参照
図は本発明の一実施例に係る試料の加熱方法の実施に使
用される加熱装置の構成図である。Referring to FIG. 1, there is shown a configuration diagram of a heating device used to carry out a method for heating a sample according to an embodiment of the present invention.
図において、１は真空容器であり、給気管１１と排気管
１２とを有し、給気管１１と排気管１２とには弁等の気
圧制御手段１３が設けられている。２は発熱体であり、
真空容器１の壁面に設けられる。In the figure, reference numeral 1 denotes a vacuum container, which has an air supply pipe 11 and an exhaust pipe 12, and the air supply pipe 11 and the exhaust pipe 12 are provided with an air pressure control means 13 such as a valve. 2 is a heating element;
It is provided on the wall of the vacuum container 1.
３は半導体ウェーハ等の試料４を支持する試料支持台で
あり、半導体ウェーハ等の試料４と発熱体２との間は密
着しておらず、少なくとも １１００ｐ 。Reference numeral 3 denotes a sample support stand that supports a sample 4 such as a semiconductor wafer, and the sample 4 such as a semiconductor wafer and the heating element 2 are not in close contact with each other, and are at least 1100p.
以上のギャップが残留するようにされている。The above gap is made to remain.
半導体ウェーハ等の試料４を加熱するにあたっては、半
導体ウェーハ等の試料４を支持台３上に乗せ、弁等気圧
制御手段１３を制御して加熱装置の内圧を制御しながら
加熱をなし、半導体ウェーハ等の試料４の温度を所望の
ように経時的に変化させる。To heat the sample 4 such as a semiconductor wafer, the sample 4 such as a semiconductor wafer is placed on the support stand 3, the valve isobaric pressure control means 13 is controlled to control the internal pressure of the heating device, and the semiconductor wafer is heated. The temperature of the sample 4 is changed over time as desired.
発熱体２の温度を３００℃に保持し、発熱体２と半導体
ウェーハ等の試料４とのギャップを３００ ｐ、 ｖｎ
に保持し、内圧を０．５〜ＩＴｏｒｒの量変化させてな
した実験の結果を第４図に示す。図より明らかなように
、Ｉ Ｔａｒｔの場合１５秒で３００℃の温度変化をす
るに比し、 Ｑ、５Ｔｏｒｒの場合は同一の温度変化を
なすために３分必要であり、ギャップの大きさと温度変
化に要する時間との間にも大きな相関関係があることが
確認されている。The temperature of the heating element 2 was maintained at 300°C, and the gap between the heating element 2 and the sample 4 such as a semiconductor wafer was set to 300 p, vn.
Fig. 4 shows the results of an experiment conducted by maintaining the internal pressure at 0.5 to I Torr. As is clear from the figure, in the case of I Tart, the temperature changes by 300°C in 15 seconds, but in the case of Q, 5 Torr, it takes 3 minutes to make the same temperature change, and the gap size and temperature It has also been confirmed that there is a strong correlation with the time required for change.
以上説明せるとおり、本発明に係る試料の加熱方法にお
いては、内圧を制御する手段を有し、被加熱体たる試料
を発熱体から離隔して支持する加熱装置を使用し、内圧
を制御する手段を経時的に制御して被加熱体たる試料の
温度を経時的に制御することとされているので、所望の
経時的温度変化を、正確迅速に、しかも、無駄時間なく
実現することができる。As explained above, in the method for heating a sample according to the present invention, a heating device is used which has a means for controlling the internal pressure and supports the sample as an object to be heated at a distance from the heating element. Since the temperature of the sample, which is the object to be heated, is controlled over time, the desired temperature change over time can be achieved accurately and quickly without wasting time.
第１図は、本発明の一実施例に係る試料の加熱方法の実
施に使用される加熱装置の構成図である。
第２図は、従来技術に係る試料加熱装置の構成図である
。
第３図は、試料の加熱工程において、要求される温度の
経時変化を示すグラフである。
第４図は、本発明の効果確認の実験結果を示すグラフで
ある。
１・・・真空容器、
２・・・発熱体、
３・・・試料支持台、
４拳・−加熱される半導体ウェーハ等の試料、１１・・
・給気管、
１２・・・排気管、
１３・・・内圧制御手段（弁）。FIG. 1 is a configuration diagram of a heating device used to implement a sample heating method according to an embodiment of the present invention. FIG. 2 is a configuration diagram of a sample heating device according to the prior art. FIG. 3 is a graph showing the change in temperature required over time in the sample heating process. FIG. 4 is a graph showing experimental results for confirming the effect of the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Heating element, 3... Sample support stand, 4 fists - Sample such as a semiconductor wafer to be heated, 11...
- Air supply pipe, 12... Exhaust pipe, 13... Internal pressure control means (valve).
Claims (1)
）を有する真空容器（１）と該真空容器（１）中に前記
発熱体（２）から離隔して試料（４）を支持する試料支
持台（３）とを有する加熱装置を使用してなす試料の加
熱方法を使用して、 前記真空容器の内圧を経時的に制御することにより前記
試料（４）と発熱体（２）との間の熱伝導度を変化させ
、前記試料（４）の温度を経時的に制御してなす ことを特徴とする試料の加熱方法。[Claims] It has a means (13) for controlling internal pressure and a heating element (2) on the wall surface.
) and a sample support stand (3) that supports the sample (4) at a distance from the heating element (2) in the vacuum vessel (1). Using a sample heating method, the thermal conductivity between the sample (4) and the heating element (2) is changed by controlling the internal pressure of the vacuum container over time, and the thermal conductivity of the sample (4) is changed. A method for heating a sample, characterized by controlling the temperature over time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27010286A JPS63124424A (en) | 1986-11-13 | 1986-11-13 | Heating method for sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27010286A JPS63124424A (en) | 1986-11-13 | 1986-11-13 | Heating method for sample |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63124424A true JPS63124424A (en) | 1988-05-27 |
Family
ID=17481562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27010286A Pending JPS63124424A (en) | 1986-11-13 | 1986-11-13 | Heating method for sample |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124424A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012231001A (en) * | 2011-04-26 | 2012-11-22 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and manufacturing method of semiconductor device |
| US9236246B2 (en) | 2011-03-04 | 2016-01-12 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and a method of manufacturing a semiconductor device |
-
1986
- 1986-11-13 JP JP27010286A patent/JPS63124424A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236246B2 (en) | 2011-03-04 | 2016-01-12 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and a method of manufacturing a semiconductor device |
| US9472424B2 (en) | 2011-03-04 | 2016-10-18 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and a method of manufacturing a semiconductor device |
| JP2012231001A (en) * | 2011-04-26 | 2012-11-22 | Hitachi Kokusai Electric Inc | Substrate processing apparatus and manufacturing method of semiconductor device |
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