JPS63117425A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63117425A JPS63117425A JP61264447A JP26444786A JPS63117425A JP S63117425 A JPS63117425 A JP S63117425A JP 61264447 A JP61264447 A JP 61264447A JP 26444786 A JP26444786 A JP 26444786A JP S63117425 A JPS63117425 A JP S63117425A
- Authority
- JP
- Japan
- Prior art keywords
- sic substrate
- etching
- hydrogen
- sic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 abstract description 7
- 229910003460 diamond Inorganic materials 0.000 abstract description 2
- 239000010432 diamond Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 33
- 230000003746 surface roughness Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000000866 electrolytic etching Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＳｉＣ基板を用いた発光ダイオード等の半導体
装置を製造する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device such as a light emitting diode using a SiC substrate.
一般に６Ｈ−３ｉＣ（６Ｈ型炭化ケイ素）は光学的禁制
帯幅が室温で約３．ＯｅＶあり、間接遷移型であるが、
ｐ型、ｎ型の両轟電型を得ることが出来て、青色発光素
子用基板として注目されている。しかも従来難点とされ
ていた大面積単結晶を得難い点についても近時昇華法に
よって直径３０Ｉｌ程度の単結晶インゴットが得られる
ようになり、その利用が進められている。Generally, 6H-3iC (6H type silicon carbide) has an optical forbidden band width of about 3. Although it has OeV and is an indirect transition type,
It is possible to obtain both p-type and n-type Todoroden types, and is attracting attention as a substrate for blue light emitting devices. Moreover, even though it has been difficult to obtain a large-area single crystal, which has traditionally been a problem, it has recently become possible to obtain a single-crystal ingot with a diameter of about 30 Il by the sublimation method, and its use is progressing.
単結晶インゴットは、通常スライス、研磨、ポリッシン
グ工程を経てエピタキシャル成長用基板に形成されるの
が普通であるが、ＳｉＣの場合そのままでは未だ研磨に
よるダメージが残留しており、基板としての使用が難し
いため、通常アルカリ溶融塩エツチング、電解エツチン
グ、ガスエツチング等による表面処理が施される。Single-crystal ingots are normally formed into epitaxial growth substrates through slicing, polishing, and polishing processes, but in the case of SiC, damage from polishing still remains, making it difficult to use as a substrate. , surface treatment is usually performed by alkali molten salt etching, electrolytic etching, gas etching, etc.
しかしアルカリ溶融塩エツチングでｉエツチング後の表
面にエッチピットが多数現れる難点があり、また電解エ
ツチングは導電型がｐ型の場合に限られること、及びエ
ツチング後の表面に不動態膜が生成される難点がある。However, alkaline molten salt etching has the disadvantage that many etch pits appear on the surface after i-etching, and electrolytic etching is limited to cases where the conductivity type is p-type, and a passive film is formed on the surface after etching. There are some difficulties.
このためガスエツチングが望ましいとされているが、ガ
スエツチングのうちＡｒ−Ｃｊ！、−０，系ガスに依る
場合はＳｉＣのＳｉ面、特に６Ｈ−３ｉＣの（０００１
） Ｓｉ面、３Ｃ−５ｉＣの（１１１）Ｓｉ面に対して
は殆どエツチングが出来ず、デバイス作製時に面方位に
よって表面処理が難しい場合が生じる難点があるためエ
ツチング用ガスとして水素の使用が試みられている（Ｊ
、ＡＰＰＬ、ＰＨＹＳ。For this reason, gas etching is considered desirable, but among gas etching, Ar-Cj! , -0, depending on the system gas, the Si surface of SiC, especially the (0001
) The Si surface and the (111) Si surface of 3C-5iC can hardly be etched, and surface treatment may be difficult depending on the surface orientation during device fabrication. Therefore, attempts have been made to use hydrogen as an etching gas. (J
, APPL, PHYS.
シＯＬ、８．１ｌｈ４．ＡＰＲＩＬ１９６９ ）。ShiOL, 8.1lh4. APRIL1969).
しかしこの方法ではＳｉＣ基板表面粗さが大きく十分な
表面処理効果が得られていないのが現状である。However, with this method, the surface roughness of the SiC substrate is large and a sufficient surface treatment effect cannot be obtained at present.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは表面粗さの格段の低減を図れるよう
にした水素を用いてＳｉＣ基板を気相エツチングする工
程を含む半導体装置の製造方法を提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to manufacture a semiconductor device including a step of vapor phase etching a SiC substrate using hydrogen, which can significantly reduce surface roughness. We are here to provide you with a method.
本発明にあってはＳｉＣ基板を１８００℃以上に加熱維
持しつつ水素を用いて気相エツチングを施す工程を含む
。The present invention includes a step of performing vapor phase etching using hydrogen while heating and maintaining the SiC substrate at 1800° C. or higher.
本発明はこれによってＳｉＣ基板表面の粗さを大幅に低
減出来てエピタキシャル成長膜品質の均一化が図れる。According to the present invention, the roughness of the SiC substrate surface can be significantly reduced and the quality of the epitaxially grown film can be made uniform.
以下本発明方法を発光ダイオードの製造に適用した場合
について図面に基づき具体的に説明する。Hereinafter, a case in which the method of the present invention is applied to manufacturing a light emitting diode will be specifically explained based on the drawings.
第１図（イ）〜（へ）は本発明方法による表面処理工程
を含む発光ダイオードの製造工程図であり、先ず第１図
（イ）に示す如きｎ型の６Ｈ−ＳｉＣインゴット１を、
第１図（ロ）に示す如く所定の厚さにスライスし、その
表面をダイヤモンド粒を用いて研磨し、ＳｉＣ基板の中
間品２を得た後、第１図（ハ）に示す如く水素ガスエツ
チングを施して、所定の厚さに仕上げたＳｉＣ基板３を
得、このＳｉＣ基板３の表面に第１図（ニ）に示す如く
ｎ型半専体層４、ｐ型半導体層５をこの順序にエピタキ
シャル成長させた後、ｐ型半導体層３の表面の一部には
Ａｌ金属製の、またＳｉＣ基板１の下面にはＮｉ製の電
極６．７を蒸着し、熱処理を施した後、第１図（へ）に
示す如くダイシング加工して発光ダイオードＡ、Ｂ、Ｃ
・・・を得る。FIGS. 1(a) to 1(f) are process diagrams for manufacturing a light emitting diode including a surface treatment process according to the method of the present invention. First, an n-type 6H-SiC ingot 1 as shown in FIG. 1(a) is
After slicing to a predetermined thickness as shown in FIG. 1 (b) and polishing the surface using diamond grains to obtain an intermediate SiC substrate 2, as shown in FIG. 1 (c), hydrogen gas A SiC substrate 3 finished to a predetermined thickness by etching is obtained, and an n-type semi-exclusive layer 4 and a p-type semiconductor layer 5 are formed in this order on the surface of this SiC substrate 3 as shown in FIG. 1(d). After epitaxial growth, an electrode 6.7 made of Al metal is deposited on a part of the surface of the p-type semiconductor layer 3, and an electrode 6.7 made of Ni is deposited on the lower surface of the SiC substrate 1, and after heat treatment, a first Light emitting diodes A, B, and C are made by dicing as shown in the figure (f).
...obtain...
水素によるＳｉＣ基板の中間品２に対するエツチングは
具体的には次のようにして行われる。エツチング用の反
応炉（図示せず）内にＳｉＣ基板の中間品２を収容して
、これを１８００℃以上に加熱維持しつつ反応炉上方か
ら水素ガスを供給する一方、反応炉の下底から吸引、排
出させて反応炉内を所定の流速で通流させる。Specifically, the etching of the intermediate product 2 of the SiC substrate using hydrogen is performed as follows. The intermediate product 2 of the SiC substrate is housed in a reactor for etching (not shown), and hydrogen gas is supplied from above the reactor while heating and maintaining it at 1800°C or higher, while supplying hydrogen gas from the bottom of the reactor. It is suctioned and discharged to flow through the reactor at a predetermined flow rate.
第２図は水素ガスによるＳｉＣ基板エツチングの表面粗
さとＳｉＣ基板温度との関係を示すグラフであって、横
軸にＳｉＣ基板温度（”Ｃ）を、また縦軸に表面粗さく
μｍ）をとって示しである。Figure 2 is a graph showing the relationship between surface roughness and SiC substrate temperature when etching a SiC substrate using hydrogen gas, with the horizontal axis representing the SiC substrate temperature ("C") and the vertical axis representing the surface roughness (μm). This is an indication.
なお、水素ガスは流量ｌ５Ｌｌ’ｌ （標準状態で１
分間に１１が流れる流量）とし、且つエツチング時間は
１０分とした。このグラフから明らかな如＜ＳｉＣ基板
温度が１８００℃以上で表面粗さはｌ１１ｍ以下となっ
て規定の平滑さが得られることが解る。In addition, the flow rate of hydrogen gas is l5Ll'l (1 in standard condition)
The etching time was 10 minutes. As is clear from this graph, when the SiC substrate temperature is 1800° C. or higher, the surface roughness becomes 111 m or less and the specified smoothness can be obtained.
第３図はＳｉＣ基板温度、水素ガス流量とエツチング速
度との関係を示すグラフであり、横軸にＳｉＣ基板温度
（ｔ’）を、また縦軸にエツチング速度（８ｍ７分）を
とって示しである。Figure 3 is a graph showing the relationship between SiC substrate temperature, hydrogen gas flow rate, and etching rate, with the horizontal axis representing the SiC substrate temperature (t') and the vertical axis representing the etching rate (8 m7 minutes). be.
なお、グラフ中白丸でプロットしたのは水素ガス流量を
Ｈｚ＝ＩＳＬＭとしたときの、また黒丸でプロットした
のはＨｚ＝２ＳＬＭとしたときの結果を示している。Note that the white circles plotted in the graph show the results when the hydrogen gas flow rate was set to Hz=ISLM, and the black circles plotted show the results when Hz=2SLM.
このグラフから明らかな如く水素ガス流量の変化に応じ
てエツチング速度も略２倍近い値となっていることが解
る。ただＳｉＣ％板温度を１８００℃以上にすると水素
ガス流量によるエツチング速度の差は比較的小さくなっ
ている。As is clear from this graph, the etching rate nearly doubles as the hydrogen gas flow rate changes. However, when the SiC% plate temperature is increased to 1800° C. or higher, the difference in etching rate due to hydrogen gas flow rate becomes relatively small.
第４図は本発明方法によって製造したＳｉＣ発光ダイオ
ードとエツチング処理を施さないＳｉＣ基板に形成した
ＳｉＣ発光ダイオードとの電流 電圧特性図であり、横
軸に印加電圧（Ｖ）を、また縦軸に電流値（Ａ）をとっ
て示しである。FIG. 4 is a current-voltage characteristic diagram of a SiC light-emitting diode manufactured by the method of the present invention and a SiC light-emitting diode formed on a SiC substrate that is not subjected to etching treatment, with the horizontal axis representing the applied voltage (V) and the vertical axis representing the applied voltage (V). The current value (A) is shown.
グラフ中白丸でプロットしたのは、本発明方法を適用し
て得た発光ダイオードの、また黒丸でプロットしたのは
エツチングを施さないＳｉＣ基板に形成した発光ダイオ
ードの結果である。このグラフから明らかなように本発
明方法を適用して得た発光ダイオードは直線性が大幅に
改善されていることが解る。In the graph, the white circles plot the results of a light-emitting diode obtained by applying the method of the present invention, and the black circles plot the results of a light-emitting diode formed on an unetched SiC substrate. As is clear from this graph, the linearity of the light emitting diode obtained by applying the method of the present invention is significantly improved.
以上の如く本発明方法にあってはＳｉＣ基板温度を１８
００℃以上に加熱維持しつつ水素を用いて気相エツチン
グを施すことから、ＳｉＣ基板表面の平滑度に優れ、半
導体装置自体の品質の均一化が図れるなど本発明は優れ
た効果を奏するものである。As described above, in the method of the present invention, the SiC substrate temperature is
Since gas phase etching is carried out using hydrogen while maintaining heating at 00°C or higher, the present invention has excellent effects such as excellent smoothness of the SiC substrate surface and uniform quality of the semiconductor device itself. be.
第１図（イ）〜（へ）は本発明方法の工程図、第２図は
ＳｉＣ基板温度とＳｉＣ表面粗さとの関係を示すグラフ
、第３図はＳｉＣ基板温度、水素流量。
エツチング速度の関係を示すグラフ、第４図は本発明方
法を適用して得た発光ダイオードと水素エツチングを施
さないＳｉＣ基板を用いて得た発光ダイオードとの比較
試験結果を示す電流 電圧特性図である。
１・・・ｎ型６Ｈ−３ｉＣインゴツト
２・・・ＳｉＣ基板用の中間品 ３・・・ＳｉＣ基板４
・・・ｎ型半導体層 ５・・・ｐ型半導体層６．７・・
・電極
特 許 出願人 三洋電機株式会社
代理人 弁理士 河 野 登 夫
口二二二二二ニトえ
↓
第 １ 旧
ＳｉＣ基板シ五度（“Ｃ）
第 ２ 口
＋６００ ＋７００ １８ｏＯ
５ｉＣ基脹１度（°Ｃ）
印加Ｉ！尾（Ｖ）
手続補正ＩＦ（自発）
昭和６２年１月９日Figures 1 (a) to (f) are process diagrams of the method of the present invention, Figure 2 is a graph showing the relationship between SiC substrate temperature and SiC surface roughness, and Figure 3 is the SiC substrate temperature and hydrogen flow rate. Figure 4 is a graph showing the relationship between etching speeds, and a current-voltage characteristic diagram showing the results of a comparative test between a light-emitting diode obtained by applying the method of the present invention and a light-emitting diode obtained using a SiC substrate that was not subjected to hydrogen etching. be. 1... N-type 6H-3iC ingot 2... Intermediate product for SiC substrate 3... SiC substrate 4
...N-type semiconductor layer 5...P-type semiconductor layer 6.7...
・Electrode patent Applicant Sanyo Electric Co., Ltd. Agent Patent attorney Noboru Kono
5iC base 1 degree (°C) Application I! Tail (V) Procedural amendment IF (voluntary) January 9, 1986
Claims (1)
ＳｉＣ基板を１８００℃以上に加熱維持しつつ水素を用
いて気相エッチングをする工程を含むことを特徴とする
半導体装置の製造方法。1. In the process of manufacturing semiconductor devices using SiC substrates,
A method for manufacturing a semiconductor device, comprising the step of performing vapor phase etching using hydrogen while heating and maintaining a SiC substrate at 1800° C. or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264447A JPS63117425A (en) | 1986-11-05 | 1986-11-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61264447A JPS63117425A (en) | 1986-11-05 | 1986-11-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63117425A true JPS63117425A (en) | 1988-05-21 |
Family
ID=17403320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61264447A Pending JPS63117425A (en) | 1986-11-05 | 1986-11-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63117425A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002255692A (en) * | 2001-03-02 | 2002-09-11 | Nippon Steel Corp | Silicon carbide epitaxial substrate and manufacturing method thereof |
| JP2005311348A (en) * | 2004-03-26 | 2005-11-04 | Kansai Electric Power Co Inc:The | Bipolar semiconductor device and process for producing the same |
-
1986
- 1986-11-05 JP JP61264447A patent/JPS63117425A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002255692A (en) * | 2001-03-02 | 2002-09-11 | Nippon Steel Corp | Silicon carbide epitaxial substrate and manufacturing method thereof |
| JP2005311348A (en) * | 2004-03-26 | 2005-11-04 | Kansai Electric Power Co Inc:The | Bipolar semiconductor device and process for producing the same |
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