JPS63103889A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPS63103889A JPS63103889A JP24758586A JP24758586A JPS63103889A JP S63103889 A JPS63103889 A JP S63103889A JP 24758586 A JP24758586 A JP 24758586A JP 24758586 A JP24758586 A JP 24758586A JP S63103889 A JPS63103889 A JP S63103889A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- frequency induction
- noble metal
- single crystal
- heating coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 37
- 230000006698 induction Effects 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 239000000155 melt Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 239000010970 precious metal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 8
- 238000013021 overheating Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 239000007769 metal material Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 229910052697 platinum Inorganic materials 0.000 description 8
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は単結晶引上装置、特に高周波誘導加熱を行い引
上法に↓っで単結晶を得る単結晶引上装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a single crystal pulling apparatus, and particularly to a single crystal pulling apparatus that performs high-frequency induction heating and obtains a single crystal by a pulling method.
従来この種の単結晶引上装置は、ふつう白金のるつぼの
水平方向の外周にほぼその全長に亘って高周波誘導加熱
用コイルを設け、このコイルに高周波電流を流して白金
るつぼを高周波誘導で加熱して結晶を引上げ育成するよ
うになっている。そして多くの種類の単結晶の引上育成
に大きな役割本発明による装置との対比のために示した
もので。Conventionally, this type of single crystal pulling apparatus usually has a high-frequency induction heating coil installed around the horizontal outer circumference of the platinum crucible over almost its entire length, and a high-frequency current is passed through this coil to heat the platinum crucible by high-frequency induction. It is designed to pull up and grow crystals. It plays a major role in the pulling and growing of many types of single crystals.It is shown here for comparison with the apparatus according to the present invention.
１は白金などの貴金属製のるつぼ、２は高周波誘導加熱
用コイル、３は原料、４は種結晶、５は引上げられた単
結晶を示す。そしてこの装置は上記のように多くの種類
の単結晶引上育成に用いられる。なおるつぼ壁面位置ａ
−ｇについてはあとに説明する。1 is a crucible made of noble metal such as platinum, 2 is a high-frequency induction heating coil, 3 is a raw material, 4 is a seed crystal, and 5 is a pulled single crystal. As mentioned above, this apparatus is used for pulling and growing many types of single crystals. Note: Crucible wall position a
-g will be explained later.
しかしながら大型の単結晶を引上げるようＫなってから
は事情が変シ、成る種の材料では必ずしも好結果が得ら
れなくなってきた。すなわち二酸化テルルの場合には特
性が劣化するという事態が生じた。However, since it became necessary to pull large single crystals, the situation has changed, and good results are no longer always obtained using different types of materials. In other words, in the case of tellurium dioxide, a situation occurred in which the characteristics deteriorated.
二酸化テルルの単結晶はレーデファクシミリなどに応用
されるレーザ光の変調用光学素子として用いられるもの
である。融点７３３℃の二酸化テルル単結晶は金、白金
等の貴金属製るつぼ内に原料を装入した後、上記のよう
に高周波誘導により加熱融解し引き上げ法により製造さ
れている。そして直径５０ｍｍφ程度の小型るつぼにお
いては特に問題なく結晶を育成することができるのであ
るが。Single crystals of tellurium dioxide are used as optical elements for modulating laser light in applications such as radar facsimiles. Tellurium dioxide single crystals with a melting point of 733° C. are produced by charging a raw material into a crucible made of a noble metal such as gold or platinum, heating and melting the crucible using high-frequency induction as described above, and pulling the crucible. In a small crucible with a diameter of about 50 mmφ, crystals can be grown without any particular problem.
直径８０ｍｍφ以上の大型るつぼになると良質のものが
得られない。If you use a large crucible with a diameter of 80 mm or more, you will not be able to obtain a high quality product.
上記の問題点を検討した結果、特性の好ましくない単結
晶は僅かではあるが着色しているところから、成分のご
く一部が好ましくない過剰の不純物として融液内に溶は
込み、結果的に結晶内に取込まれたものであシ、その原
因がるつぼの壁が局部的に過熱されることによるもので
あることが分った。As a result of examining the above problems, we found that single crystals with unfavorable characteristics were slightly colored, and a small portion of the components dissolved into the melt as undesirable excess impurities, resulting in It was found that this was incorporated into the crystal, and that the cause was localized overheating of the crucible wall.
したがって本発明の目的ｒｆｉｉの温度が局部的に過熱
されることのないるつぼを用いた結晶引上げ装置を得よ
うとするものである。Therefore, an object of the present invention is to obtain a crystal pulling apparatus using a crucible in which the temperature of RFII is not locally overheated.
るつぼはもともと融液を入れるものであるため。 This is because a crucible is originally intended to contain melt.
その壁面の温度分布については従来は全く関心を払って
いなかったものであるが９本発明では局部的な過熱を防
止するために補助ヒータを設けるようにしたものである
。Conventionally, no attention was paid to the temperature distribution on the wall surface, but in the present invention, an auxiliary heater is provided to prevent local overheating.
すなわち本発明によれば、貴金属製るつぼ中の原材料を
高周波誘導により加熱して融液となし。That is, according to the present invention, a raw material in a noble metal crucible is heated by high frequency induction to form a melt.
引上法によって該融液から単結晶を育成する装置におい
て、前記るつぼの上端水平方向の外周及び底部の下側に
、前記高周波誘導を受けて加熱されるような形状の貴金
属部材を、該るつぼの温度を一様に近ずけるための補助
ヒータとして設けたことを特徴とする単結晶引上装置が
得られる。In an apparatus for growing a single crystal from the melt by a pulling method, a noble metal member shaped to be heated by receiving the high frequency induction is placed on the upper horizontal outer periphery of the crucible and below the bottom of the crucible. A single crystal pulling apparatus is obtained, which is characterized in that it is provided as an auxiliary heater for making the temperature of the single crystal nearly uniform.
第１図は本発明の一実施例である単結晶引上装置の構成
を示す図である。白金のるつぼ１の上端の水平方向の外
周とるつぼ底部の下にそれぞれ白金製の補助ヒータ６と
７を配置しである。るつぼ１及び補助ヒータ６．７は高
周波誘導加熱用コイル２によって誘導加熱されるが、こ
のときのるつぼ壁面位置ａ′〜ｇ′の各箇所の温度差が
最少となるように高周波誘導加熱用コイル２を若干上下
させて最適の位置に設定する。FIG. 1 is a diagram showing the configuration of a single crystal pulling apparatus which is an embodiment of the present invention. Auxiliary heaters 6 and 7 made of platinum are arranged on the horizontal outer periphery of the upper end of the platinum crucible 1 and under the bottom of the crucible, respectively. The crucible 1 and the auxiliary heaters 6 and 7 are heated by induction by the high-frequency induction heating coil 2, and the high-frequency induction heating coil is heated so that the temperature difference between the crucible wall positions a' to g' at this time is minimized. 2 slightly up or down to set it to the optimal position.
次に示す表はるつぼ位置と温度の関係をあられす図であ
って、上段は本発明における上記のような構成のるつぼ
壁面位置ａ′〜ｇ′における各温度を。The following table shows the relationship between crucible position and temperature, and the upper row shows each temperature at crucible wall positions a' to g' of the above-described structure in the present invention.
下段は先に比較のために示した第２図の従来装置におけ
るるつぽ壁面位置ａ−％−ｇにおける各温度をそれぞれ
示したものである。The lower row shows each temperature at crucible wall surface positions a-%-g in the conventional apparatus shown in FIG. 2, which was shown earlier for comparison.
以下承臼
この表から分るように、同一るつほにおける温度差は、
従来装置においては最高３６℃に達するのに対し９本発
明による装置では１０℃に過ぎず。As you can see from this table below, the temperature difference at the same location is
In the conventional device, the temperature reaches a maximum of 36°C, whereas in the device according to the present invention, the temperature is only 10°C.
而も全体的な温度も従来装置よシ本発明による装置の方
が低くなっている。このことは本発明による装置におい
ては局所的過熱が極めて生じにくいことを意味する。Moreover, the overall temperature is lower in the apparatus according to the present invention than in the conventional apparatus. This means that local overheating is extremely unlikely to occur in the device according to the invention.
第１図の本発明の結晶引上装置における操作を説明する
と、るつぼ１及び補助ヒータ６．７を高周波誘導加熱用
コイル２によって誘導加熱してるつぼ１の温度を制御し
、るつは内の二酸化テルルの原料３を融解した後種結晶
４の先端を融解した原料３に浸し２種結晶４を引き上げ
て二酸化テルル単結晶５を育成したところ、るつぼ材が
不純物として結晶内に取シ込まれず、高品質な二酸化テ
ルル単結晶を育成することができた。いうまでもないこ
とであるが、この第１図の装置は上記のような特定な種
類の単結晶だけではなく、貴金属るつぼを使用する他の
すべての種類の単結晶の引上育成を可能とするものであ
る。To explain the operation of the crystal pulling apparatus of the present invention shown in FIG. 1, the temperature of the crucible 1 is controlled by induction heating the crucible 1 and the auxiliary heaters 6.7 by the high-frequency induction heating coil 2, and the temperature of the crucible 1 is controlled. After melting the tellurium dioxide raw material 3, the tip of the seed crystal 4 was immersed in the melted raw material 3, and the second seed crystal 4 was pulled up to grow a tellurium dioxide single crystal 5. As a result, the crucible material was not incorporated into the crystal as an impurity. We were able to grow high-quality tellurium dioxide single crystals. Needless to say, the apparatus shown in Figure 1 is capable of pulling and growing not only the specific types of single crystals mentioned above, but also all other types of single crystals using a precious metal crucible. It is something to do.
なお金、白金などの貴金属の大きなるつぼを用いた時に
特性の劣化する材料としては９発明者が現在までに取扱
ったものとしては前述の二酸化テルルだけであるが、実
際にほかにもこのようなものはあると考えられ、又将来
性しく形成される可能性もある。そして本発明による装
置はこのような種類のものにも前記のように充分対処し
得るものでちる。The above-mentioned tellurium dioxide is the only material that the inventor has handled to date, but the material whose properties deteriorate when a large crucible of precious metals such as money and platinum is used. It is thought that things exist, and there is also a possibility that they will be formed in the future. The apparatus according to the present invention can also be used satisfactorily for such types of objects as described above.
以上説明したように、白金製補助ヒータを備えた本発明
の単結晶引上装置を用いることにより。As explained above, by using the single crystal pulling apparatus of the present invention equipped with a platinum auxiliary heater.
るつぼの局所的過熱を抑制することができ、これにより
るつぽ材からの不純物が結晶内にとシ込まれない。従っ
てこの装置を用いれば貴金属るつぼを用いるすべての種
類の材料について特性劣化をもたらすようなるつぼ材不
純物を含まない単結晶を得ることができる。Local overheating of the crucible can be suppressed, so that impurities from the crucible material are not pumped into the crystal. Therefore, by using this apparatus, it is possible to obtain single crystals free of crucible material impurities that would cause property deterioration for all types of materials used in noble metal crucibles.
第１図は本発明の一実施例である単結晶引上装置の構成
を示す図、第２図は従来の装置の構成を示す図である。
記号の説明＝１はるつぼ、２は高周波誘導加熱用コイル
、３は原料、４は種結晶、５は単結晶。
６と７は補助ヒータｙ ａ ”” ｇ ｒ ＆’〜ｇ′
はるつぼ壁面位置をそれぞれ示す。
第１図
第２図FIG. 1 is a diagram showing the configuration of a single crystal pulling apparatus which is an embodiment of the present invention, and FIG. 2 is a diagram showing the configuration of a conventional apparatus. Explanation of symbols = 1 is a crucible, 2 is a high-frequency induction heating coil, 3 is a raw material, 4 is a seed crystal, and 5 is a single crystal. 6 and 7 are auxiliary heaters y a "" g r &'~g'
The positions of the crucible walls are shown. Figure 1 Figure 2
Claims (1)
して融液となし、引上法によって該融液から単結晶を育
成する装置において、前記るつぼの上端の水平方向の外
周及び底部の下側に、前記高周波誘導を受けて加熱され
るような形状の貴金属部材を、該るつぼの温度を一様に
近ずけるための補助ヒータとして設けたことを特徴とす
る単結晶引上装置。1. In an apparatus for heating a raw material in a precious metal crucible by high-frequency induction to form a melt and growing a single crystal from the melt by a pulling method, the horizontal outer periphery of the upper end of the crucible and the lower side of the bottom A single crystal pulling apparatus characterized in that a noble metal member shaped to be heated by receiving the high frequency induction is provided as an auxiliary heater for making the temperature of the crucible uniform.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24758586A JPS63103889A (en) | 1986-10-20 | 1986-10-20 | Device for pulling up single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24758586A JPS63103889A (en) | 1986-10-20 | 1986-10-20 | Device for pulling up single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63103889A true JPS63103889A (en) | 1988-05-09 |
Family
ID=17165692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24758586A Pending JPS63103889A (en) | 1986-10-20 | 1986-10-20 | Device for pulling up single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63103889A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383889A (en) * | 1989-08-24 | 1991-04-09 | Natl Inst For Res In Inorg Mater | Liquid surface temperature control type single crystal rearing method and apparatus therefor |
| JP2004123510A (en) * | 2002-06-13 | 2004-04-22 | Hitachi Ltd | Apparatus for manufacturing single crystal and method for manufacturing the same |
| JP2010052993A (en) * | 2008-08-29 | 2010-03-11 | Kyocera Corp | Crucible for apparatus for growing single crystal, method for growing single crystal, and apparatus for growing single crystal |
| CN110195254A (en) * | 2019-07-12 | 2019-09-03 | 中国电子科技集团公司第二十六研究所 | A kind of coil packaged type thermal field structure and method for monocrystal growth suitable for czochralski method |
-
1986
- 1986-10-20 JP JP24758586A patent/JPS63103889A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0383889A (en) * | 1989-08-24 | 1991-04-09 | Natl Inst For Res In Inorg Mater | Liquid surface temperature control type single crystal rearing method and apparatus therefor |
| JP2004123510A (en) * | 2002-06-13 | 2004-04-22 | Hitachi Ltd | Apparatus for manufacturing single crystal and method for manufacturing the same |
| JP2010052993A (en) * | 2008-08-29 | 2010-03-11 | Kyocera Corp | Crucible for apparatus for growing single crystal, method for growing single crystal, and apparatus for growing single crystal |
| CN110195254A (en) * | 2019-07-12 | 2019-09-03 | 中国电子科技集团公司第二十六研究所 | A kind of coil packaged type thermal field structure and method for monocrystal growth suitable for czochralski method |
| CN110195254B (en) * | 2019-07-12 | 2022-08-12 | 中国电子科技集团公司第二十六研究所 | Coil movable temperature field structure suitable for Czochralski method and single crystal growth method |
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