JPH11116390A - Furnace for pulling silicon single crystal by cz method, and heater therefor - Google Patents
Furnace for pulling silicon single crystal by cz method, and heater thereforInfo
- Publication number
- JPH11116390A JPH11116390A JP29055897A JP29055897A JPH11116390A JP H11116390 A JPH11116390 A JP H11116390A JP 29055897 A JP29055897 A JP 29055897A JP 29055897 A JP29055897 A JP 29055897A JP H11116390 A JPH11116390 A JP H11116390A
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- Prior art keywords
- heater
- single crystal
- silicon single
- furnace
- slit
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、ＣＺ法によるシ
リコン単結晶引上炉及びそのヒータに関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon single crystal pulling furnace by a CZ method and a heater thereof.
【０００２】[0002]
【従来の技術】ＣＺ法によるシリコン単結晶引上炉で
は、炭素製ヒータにより加熱を行うのが一般的である。2. Description of the Related Art In a silicon single crystal pulling furnace by the CZ method, heating is generally performed by a carbon heater.
【０００３】炭素製ヒータは全体的に円筒状で、ルツボ
側面を取り囲むように配置される。炭素製ヒータは、ヒ
ータの頂辺から底辺方向に切り込んだスリットと、ヒー
タの底辺から頂辺方向に切り込んだスリットを有してい
る。これらの２種類のスリットは交互に並んで形成され
る。[0003] The carbon heater is generally cylindrical and is arranged so as to surround the crucible side surface. The carbon heater has a slit cut from the top of the heater toward the bottom, and a slit cut from the bottom of the heater toward the top. These two types of slits are formed alternately.
【０００４】[0004]
【発明が解決しようとする課題】ＣＺ法シリコン単結晶
引上炉で引上げる単結晶の品質は、シリコン融液表面の
温度変動に依存する。融液表面の温度変動が大きい場合
には、酸素析出物に起因する積層欠陥のストリエーショ
ンパターンが発生する。The quality of a single crystal pulled in a CZ silicon single crystal pulling furnace depends on the temperature fluctuation of the silicon melt surface. When the temperature fluctuation of the melt surface is large, a striation pattern of stacking faults caused by oxygen precipitates occurs.
【０００５】それゆえ、シリコン融液の温度制御は非常
に重要であり、特に加熱用のヒータの材質や形状に関し
て、これまで様々な研究が成されてきた。[0005] Therefore, the temperature control of the silicon melt is very important, and various studies have been made on the material and shape of the heater for heating.
【０００６】本発明者は、前述のタイプのヒータにおい
て、２種類のスリットのオーバーラップ長さをｈ、ヒー
タの内径をｄとした場合に、ｄとｈの値がシリコン単結
晶の特性値を左右する重要なパラメータとなることに着
目し、鋭意研究を重ねて本発明を完成するに至った。The inventor of the present invention has found that in the above-mentioned type of heater, when the overlap length of the two types of slits is h and the inner diameter of the heater is d, the values of d and h are the characteristic values of the silicon single crystal. Focusing on the important parameters that affect the present invention, the present inventors have made extensive studies and completed the present invention.
【０００７】本発明の目的は、ストリエーションを確実
に抑制でき、かつ、単結晶化率を高い値に保つことがで
きるＣＺ法シリコン単結晶引上炉及びそのヒータを提供
することである。An object of the present invention is to provide a CZ method silicon single crystal pulling furnace and a heater capable of reliably suppressing striation and maintaining a high single crystallization ratio.
【０００８】[0008]
【課題を解決するための手段】本願第１発明は、ヒータ
の頂辺（２６）から底辺方向に切り込んだスリット（２
４）と、ヒータの底辺（２７）から頂辺方向に切り込ん
だスリット（２５）を備えたＣＺ法シリコン単結晶引上
炉用ヒータにおいて、前記２種類のスリット（２４、２
５）のオーバーラップ長さをｈとし、ヒータの内径をｄ
とした場合に、ｈとｄの比（ｈ／ｄ）が０．５５≦（ｈ
／ｄ）≦０．７０となることを特徴とするＣＺ法シリコ
ン単結晶引上炉用ヒータを要旨としている。According to a first aspect of the present invention, a slit (2) cut from a top side (26) of a heater in a bottom side direction is provided.
4) and a heater for a CZ method silicon single crystal pulling furnace provided with a slit (25) cut from the bottom side (27) to the top side of the heater.
5) Let h be the overlap length and d be the inner diameter of the heater.
When the ratio of h and d (h / d) is 0.55 ≦ (h
/D)≦0.70, a heater for a CZ method silicon single crystal pulling furnace.
【０００９】本願第２発明は、ケーシング（１１）と、
ケーシング（１１）内に回転可能に配置されるルツボ
（１２、１３）と、ルツボ（１２、１３）の外側に配置
されるヒータ（１５）と、ルツボ（１２、１３）の上方
に配置される単結晶引上機構を備えたＣＺ法シリコン単
結晶引上炉において、ヒータの頂辺（２６）から底辺方
向にスリット（２４）が形成され、ヒータの底辺（２
７）から頂辺方向にスリット（２５）が形成されてお
り、前記２種類のスリット（２４、２５）のオーバーラ
ップ長さをｈとし、ヒータの内径をｄとした場合に、ｈ
とｄの比（ｈ／ｄ）が０．５５≦（ｈ／ｄ）≦０．７０
となることを特徴とするＣＺ法シリコン単結晶引上炉を
要旨としている。[0009] The second invention of the present application comprises a casing (11),
A crucible (12, 13) rotatably arranged in the casing (11), a heater (15) arranged outside the crucible (12, 13), and arranged above the crucible (12, 13). In a CZ method silicon single crystal pulling furnace equipped with a single crystal pulling mechanism, a slit (24) is formed from a top side (26) to a bottom side of the heater, and a bottom (2) of the heater is formed.
7), a slit (25) is formed in the top side direction. When the overlap length of the two types of slits (24, 25) is h and the inner diameter of the heater is d, h
And the ratio (h / d) of d and d is 0.55 ≦ (h / d) ≦ 0.70
The gist is a CZ method silicon single crystal pulling furnace characterized by the following.
【００１０】[0010]
【発明の実施の形態】本発明のヒータは、ヒータの頂辺
から底辺方向に切り込んだスリットと、ヒータの底辺か
ら頂辺方向に切り込んだスリットを備えたＣＺ法シリコ
ン単結晶引上炉用ヒータにおいて、前記２種類のスリッ
トのオーバーラップ長さをｈとし、ヒータの内径をｄと
した場合に、ｈとｄの比（ｈ／ｄ）が０．５５≦（ｈ／
ｄ）≦０．７０となっている。DESCRIPTION OF THE PREFERRED EMBODIMENTS A heater according to the present invention has a slit cut from a top side to a bottom side of the heater and a heater for a CZ silicon single crystal pulling furnace having a slit cut from a bottom side to a top side of the heater. In the above, when the overlap length of the two types of slits is h and the inner diameter of the heater is d, the ratio (h / d) of h and d is 0.55 ≦ (h / d).
d) ≦ 0.70.
【００１１】前記オーバーラップ長さｈとは、ヒータの
頂辺から底辺方向に切り込んだスリットの下端部と、ヒ
ータの底辺から頂辺方向に切り込んだスリットの上端部
との距離を意味する。The overlap length h means the distance between the lower end of the slit cut from the top of the heater toward the bottom and the upper end of the slit cut from the bottom of the heater toward the top.
【００１２】（ｈ／ｄ）の値が０．５５未満の場合に
は、ストリエーションパターンの発生は抑えられるが、
単結晶化率が低下し、生産性が落ちる。When the value of (h / d) is less than 0.55, the occurrence of striation patterns can be suppressed.
The single crystallization rate decreases, and the productivity decreases.
【００１３】（ｈ／ｄ）の値が０．７０を超えると、シ
リコン融液表面の温度変動が大きくなり、酸素析出物に
起因する積層欠陥のストリエーションパターンが発生す
る。When the value of (h / d) exceeds 0.70, the temperature fluctuation on the surface of the silicon melt becomes large, and a striation pattern of stacking faults caused by oxygen precipitates occurs.
【００１４】本発明のＣＺ法シリコン単結晶引上炉は、
ケーシングと、ケーシング内に回転可能に配置されるル
ツボと、ルツボの外側に配置されるヒータと、ルツボの
上方に配置される単結晶引上機構を備えたＣＺ法シリコ
ン単結晶引上炉において、ヒータの頂辺から底辺方向に
スリットが形成され、ヒータの底辺から頂辺方向にスリ
ットが形成されており、前記２種類のスリットのオーバ
ーラップ長さをｈとし、ヒータの内径をｄとした場合
に、ｈとｄの比（ｈ／ｄ）が０．５５≦（ｈ／ｄ）≦
０．７０となっている。The CZ method silicon single crystal pulling furnace of the present invention comprises:
In a CZ method silicon single crystal pulling furnace equipped with a casing, a crucible rotatably disposed in the casing, a heater disposed outside the crucible, and a single crystal pulling mechanism disposed above the crucible, A slit is formed from the top side to the bottom side of the heater, and a slit is formed from the bottom side to the top side of the heater. The overlap length of the two types of slits is h, and the inner diameter of the heater is d. Where the ratio of h and d (h / d) is 0.55 ≦ (h / d) ≦
It is 0.70.
【００１５】[0015]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【００１６】図１は、本発明によるＣＺ法シリコン単結
晶引上炉を示す断面図である。FIG. 1 is a sectional view showing a CZ method silicon single crystal pulling furnace according to the present invention.
【００１７】ＣＺ法シリコン単結晶引上炉１０はケーシ
ング１１を有し、その中心軸上に、原料のシリコンを充
填するためのルツボが配置されている。The CZ method silicon single crystal pulling furnace 10 has a casing 11, and a crucible for filling silicon as a raw material is arranged on a central axis thereof.
【００１８】ルツボは、石英ルツボ１２とこれを収容す
る炭素ルツボ１３から構成される。炭素ルツボ１３は、
ルツボを回転・上下駆動可能なペデスタル１４によって
支持されている。The crucible comprises a quartz crucible 12 and a carbon crucible 13 for accommodating the quartz crucible. The carbon crucible 13
The crucible is supported by a pedestal 14 that can rotate and drive up and down.
【００１９】ルツボの周囲には、シリコンを加熱溶融す
るための炭素ヒータ１５が配置されている。A carbon heater 15 for heating and melting silicon is disposed around the crucible.
【００２０】ヒータ１５の周囲と上下には、保温部材１
６ａ〜１６ｃが配置されている。A heat insulating member 1 is provided around and above the heater 15.
6a to 16c are arranged.
【００２１】ルツボの上方には引上機構が配置されてい
るが、図面ではそのワイヤ３１のみが示されている。引
上機構のワイヤ先端に種結晶２１を保持し、これをシリ
コン融液２３に浸し、回転させながら徐々に引き上げる
ことにより、シリコン単結晶２２を成長させる。Although a pulling mechanism is arranged above the crucible, only the wire 31 is shown in the drawing. The seed crystal 21 is held at the tip of the wire of the pulling mechanism, immersed in a silicon melt 23, and gradually pulled up while rotating to grow the silicon single crystal 22.
【００２２】ケーシングの下部には、排気口１７が形成
されている。炉内に導入されたＡｒガス等の不活性ガス
は、排気口１７から排気される。図１では、ガスの流れ
が白抜きの矢印で示してある。An exhaust port 17 is formed at a lower portion of the casing. The inert gas such as Ar gas introduced into the furnace is exhausted from the exhaust port 17. In FIG. 1, the flow of gas is indicated by white arrows.
【００２３】図２と図３を参照して、本発明のヒータ１
５について説明する。Referring to FIGS. 2 and 3, heater 1 of the present invention will be described.
5 will be described.
【００２４】炭素ヒータ１５は全体的に円筒状で、頂辺
２６から底辺方向にはスリット２４が切り込んであり、
また底辺２７から頂辺方向にはスリット２５が切り込ん
である。２種類のスリット２４、２５は交互に並んで平
行に形成されている。The carbon heater 15 is generally cylindrical and has a slit 24 cut from the top 26 to the bottom.
A slit 25 is cut in the direction from the bottom 27 to the top. The two types of slits 24 and 25 are formed alternately and in parallel.
【００２５】スリット２４とスリット２５のオーバーラ
ップ長さ、すなわち、スリット２４の下端２４ａとスリ
ット２５の上端２５ａとの距離をｈとし、また、ヒータ
１５の内径をｄとした場合に、ｈとｄの比（ｈ／ｄ）
は、０．５５≦（ｈ／ｄ）≦０．７０となるように設定
されている。When the overlap length of the slit 24 and the slit 25, that is, the distance between the lower end 24a of the slit 24 and the upper end 25a of the slit 25 is h, and the inner diameter of the heater 15 is d, h and d Ratio (h / d)
Is set so that 0.55 ≦ (h / d) ≦ 0.70.
【００２６】実施例１ 図１に示すＣＺ法シリコン単結晶炉を用いて、ヒータに
おける（ｈ／ｄ）の値を０．４、０．５、０．５５、
０．６、０．６５、０．７、０．７５、０．８、０．９
の９水準に設定し、シリコン単結晶を引上げた。 Example 1 Using the CZ method silicon single crystal furnace shown in FIG. 1, the (h / d) value of the heater was set to 0.4, 0.5, 0.55,
0.6, 0.65, 0.7, 0.75, 0.8, 0.9
And the silicon single crystal was pulled up.
【００２７】（１）引上時のシリコン融液の温度変動幅
の相対比較 前記の各場合において、引上時の融液表面の温度変動幅
を放射温度計にて測定した。(1) Relative Comparison of Temperature Fluctuation Range of Silicon Melt During Pulling In each of the above cases, the temperature fluctuation width of the melt surface during pulling was measured with a radiation thermometer.
【００２８】そして、（ｈ／ｄ）が０．９の場合のデー
タを１とし、他の場合の温度変動幅の相対比を求めた。
その結果を図４に示す。図４によれば、（ｈ／ｄ）の値
が小さい程、また、固化率が小さい程、温度変動幅が相
対的に小さくなることが明らかになった。The data when (h / d) was 0.9 was set to 1, and the relative ratio of the temperature fluctuation width in other cases was determined.
FIG. 4 shows the results. According to FIG. 4, it became clear that the smaller the value of (h / d) and the smaller the solidification rate, the smaller the temperature fluctuation width becomes.
【００２９】（２）単結晶化率及びストリエーション 同様に、（ｈ／ｄ）が０．９の場合の単結晶化率を１と
し、他の場合の単結晶化率の相対比を求めた。その結果
を図５に示す。図５によれば、（ｈ／ｄ）≦０．５の領
域で単結晶化率が悪化することが明らかになった。(2) Single Crystallization Rate and Striation Similarly, when the (h / d) was 0.9, the single crystallization rate was set to 1, and the relative ratio of the single crystallization rate in other cases was determined. . The result is shown in FIG. According to FIG. 5, it became clear that the single crystallization ratio deteriorated in the region of (h / d) ≦ 0.5.
【００３０】一方、図６〜図９は、ストリエーションの
発生状況を示している。各図の（Ａ）〜（Ｄ）は、一本
の結晶の固化率５％〜８５％の各部位４カ所からウエハ
をサンプリングし、そのウエハを写真撮影し、ラフスケ
ッチしたものである。なお、予め６５０℃×３ｈ＋７８
０℃×３ｈ＋１０００℃×１６ｈ（in dry Ｏ2 ）の３
ステップ熱処理を施し、ライトエッチングを行っている
（蛍光灯下の目視観察による）。6 to 9 show the occurrence of striation. (A) to (D) in each figure are obtained by sampling wafers from four locations in each part where the solidification rate of one crystal is 5% to 85%, taking photographs of the wafers, and rough sketching. In addition, 650 ° C. × 3 h + 78
0 ℃ × 3h + 1000 ℃ × 16h (in dry O 2 ) 3
Step heat treatment is performed and light etching is performed (by visual observation under a fluorescent lamp).
【００３１】図６〜図９から分るように、（ｈ／ｄ）が
小さくなるにつれて、ストリエーションの発生しない部
位が固化率の小さい方向にシフトしてくる。そして、ｈ
／ｄ≦０．７の領域では、結晶全体に渡ってストリエー
ションが観察されなくなる。As can be seen from FIGS. 6 to 9, as (h / d) becomes smaller, the portion where striation does not occur shifts in the direction of a smaller solidification rate. And h
In the region where /d≦0.7, no striation is observed over the entire crystal.
【００３２】[0032]
【発明の効果】本発明のＣＺ法シリコン単結晶引上炉及
びそのヒータによれば、ストリエーションを確実に抑制
でき、かつ、単結晶化率を高い値に保つことができる。According to the CZ method silicon single crystal pulling furnace and the heater of the present invention, the striation can be surely suppressed and the single crystallization ratio can be maintained at a high value.
【００３３】なお、本発明は前述の実施例に限定されな
い。例えば、本発明は、輻射シールドを有するＣＺ装置
による単結晶の引上げにも有効である。また、本発明の
ヒータは、幾つかの断片に分割して形成することもでき
る。The present invention is not limited to the above embodiment. For example, the present invention is also effective for pulling a single crystal by a CZ device having a radiation shield. Further, the heater of the present invention can be formed by dividing into several pieces.
【図１】本発明のＣＺ法シリコン単結晶引上炉を示す断
面図。FIG. 1 is a cross-sectional view showing a CZ method silicon single crystal pulling furnace of the present invention.
【図２】本発明のヒータを示す上面図。FIG. 2 is a top view showing a heater according to the present invention.
【図３】本発明のヒータを示す縦方向断面図。FIG. 3 is a longitudinal sectional view showing a heater of the present invention.
【図４】実施例１におけるシリコン融液表面温度変動幅
を示すグラフ。FIG. 4 is a graph showing the fluctuation range of the silicon melt surface temperature in Example 1.
【図５】実施例１における単結晶化率及びストリエーシ
ョンを示すグラフ。FIG. 5 is a graph showing a single crystallization ratio and striation in Example 1.
【図６】ストリエーションの発生状況を示すラフスケッ
チ。FIG. 6 is a rough sketch showing the occurrence of striations.
【図７】ストリエーションの発生状況を示すラフスケッ
チ。FIG. 7 is a rough sketch showing a state of occurrence of striation.
【図８】ストリエーションの発生状況を示すラフスケッ
チ。FIG. 8 is a rough sketch showing the occurrence of striations.
【図９】ストリエーションの発生状況を示すラフスケッ
チ。FIG. 9 is a rough sketch showing the occurrence of striations.
１０ ＣＺ法シリコン単結晶引上炉 １１ ケーシング １２，１３ ルツボ １５ ヒータ ２４，２５ スリット ２６ ヒータの頂辺 ２７ ヒータの底辺 Reference Signs List 10 CZ method silicon single crystal pulling furnace 11 Casing 12, 13 Crucible 15 Heater 24, 25 Slit 26 Top of heater 27 Bottom of heater
Claims (2)
り込んだスリット（２４）と、ヒータの底辺（２７）か
ら頂辺方向に切り込んだスリット（２５）を備えたＣＺ
法シリコン単結晶引上炉用ヒータにおいて、前記２種類
のスリット（２４、２５）のオーバーラップ長さをｈと
し、ヒータの内径をｄとした場合に、ｈとｄの比（ｈ／
ｄ）が０．５５≦（ｈ／ｄ）≦０．７０となることを特
徴とするＣＺ法シリコン単結晶引上炉用ヒータ。1. A CZ having a slit (24) cut from the top (26) of the heater toward the bottom and a slit (25) cut from the bottom (27) of the heater toward the top.
In the heater for a silicon single crystal pulling furnace, the overlap length of the two types of slits (24, 25) is defined as h, and the inner diameter of the heater is defined as d.
A heater for a CZ method silicon single crystal pulling furnace, wherein d) is 0.55 ≦ (h / d) ≦ 0.70.
１）内に回転可能に配置されるルツボ（１２、１３）
と、ルツボ（１２、１３）の外側に配置されるヒータ
（１５）と、ルツボ（１２、１３）の上方に配置される
単結晶引上機構を備えたＣＺ法シリコン単結晶引上炉に
おいて、ヒータの頂辺（２６）から底辺方向にスリット
（２４）が形成され、ヒータの底辺（２７）から頂辺方
向にスリット（２５）が形成されており、前記２種類の
スリット（２４、２５）のオーバーラップ長さをｈと
し、ヒータの内径をｄとした場合に、ｈとｄの比（ｈ／
ｄ）が０．５５≦（ｈ／ｄ）≦０．７０となることを特
徴とするＣＺ法シリコン単結晶引上炉。2. A casing (11) and a casing (1).
Crucibles (12, 13) rotatably arranged in 1)
And a heater (15) arranged outside the crucibles (12, 13) and a CZ method silicon single crystal pulling furnace provided with a single crystal pulling mechanism arranged above the crucibles (12, 13). A slit (24) is formed from the top side (26) of the heater to the bottom side, and a slit (25) is formed from the bottom side (27) of the heater to the top side. The two types of slits (24, 25) Where h is the overlap length and d is the inner diameter of the heater, the ratio of h and d (h /
d): 0.55 ≦ (h / d) ≦ 0.70, the CZ method silicon single crystal pulling furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29055897A JPH11116390A (en) | 1997-10-08 | 1997-10-08 | Furnace for pulling silicon single crystal by cz method, and heater therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29055897A JPH11116390A (en) | 1997-10-08 | 1997-10-08 | Furnace for pulling silicon single crystal by cz method, and heater therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11116390A true JPH11116390A (en) | 1999-04-27 |
Family
ID=17757591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29055897A Pending JPH11116390A (en) | 1997-10-08 | 1997-10-08 | Furnace for pulling silicon single crystal by cz method, and heater therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11116390A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374614B2 (en) | 2004-02-19 | 2008-05-20 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Method for manufacturing single crystal semiconductor |
| US7767020B2 (en) | 2004-02-19 | 2010-08-03 | Sumco Techxiv Corporation | Method for manufacturing single crystal semiconductor |
| KR20140109945A (en) | 2012-01-11 | 2014-09-16 | 신에쯔 한도타이 가부시키가이샤 | Silicon single crystal wafer manufacturing method and electronic device |
| KR101494522B1 (en) * | 2013-04-30 | 2015-02-17 | 웅진에너지 주식회사 | Heater for single crystal silicone grower |
| CN106637387A (en) * | 2015-10-30 | 2017-05-10 | 西安通鑫半导体辅料有限公司 | Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method |
-
1997
- 1997-10-08 JP JP29055897A patent/JPH11116390A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7374614B2 (en) | 2004-02-19 | 2008-05-20 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Method for manufacturing single crystal semiconductor |
| US7767020B2 (en) | 2004-02-19 | 2010-08-03 | Sumco Techxiv Corporation | Method for manufacturing single crystal semiconductor |
| KR20140109945A (en) | 2012-01-11 | 2014-09-16 | 신에쯔 한도타이 가부시키가이샤 | Silicon single crystal wafer manufacturing method and electronic device |
| US9252025B2 (en) | 2012-01-11 | 2016-02-02 | Shin-Etsu Handotai Co., Ltd. | Method for manufacturing silicon single crystal wafer and electronic device |
| DE112012005509B4 (en) | 2012-01-11 | 2021-12-23 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing silicon single crystal wafer and electronic device |
| KR101494522B1 (en) * | 2013-04-30 | 2015-02-17 | 웅진에너지 주식회사 | Heater for single crystal silicone grower |
| CN106637387A (en) * | 2015-10-30 | 2017-05-10 | 西安通鑫半导体辅料有限公司 | Heater for monocrystal straightening and drawing and monocrystal straightening and drawing method |
| CN106637387B (en) * | 2015-10-30 | 2019-12-17 | 西安通鑫半导体辅料有限公司 | heater for pulling single crystal and pulling method |
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