JPS63103284A - Electrostatic latent image forming device - Google Patents
Electrostatic latent image forming deviceInfo
- Publication number
- JPS63103284A JPS63103284A JP24890486A JP24890486A JPS63103284A JP S63103284 A JPS63103284 A JP S63103284A JP 24890486 A JP24890486 A JP 24890486A JP 24890486 A JP24890486 A JP 24890486A JP S63103284 A JPS63103284 A JP S63103284A
- Authority
- JP
- Japan
- Prior art keywords
- latent image
- electrostatic latent
- image forming
- hydrophobic
- photosensitive body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims description 21
- 238000005507 spraying Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims 1
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 5
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 2
- 230000000740 bleeding effect Effects 0.000 abstract 1
- 108091008695 photoreceptors Proteins 0.000 description 24
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- HYFLWBNQFMXCPA-UHFFFAOYSA-N 1-ethyl-2-methylbenzene Chemical compound CCC1=CC=CC=C1C HYFLWBNQFMXCPA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 125000001165 hydrophobic group Chemical group 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 229940073608 benzyl chloride Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229930015698 phenylpropene Natural products 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Cleaning In Electrography (AREA)
Abstract
Description
０】 産業上の利用分野
本発明は、アモルファスシリコン系の静電潜像坦持体を
利用した靜を潜像形成装置に関するものである。
（ロ）従来の技術
従来、電子写真プロセスは靜１１［像形成のため、静電
潜像坦持体の帯電、露光、現像、転写、除電、クリーニ
ング工程から構成される装また、従来、静電ｌＷ像坦持
体（以下感光体といり）としては、アモルファスセレン
、硫化カドｉウム及び酸化亜鉛等の無機物質、ポリビニ
ルカルバゾール及びトジニトロンルオレノン等の有機物
質か用いられているが、いずれも単独では光感度が不足
であり、増感剤等の併用が心安とされている。そこで、
近年アモルファスシリコンがその高光導電性に着目され
、感光体として要用化されている。アモルファスシリコ
ンは、上記感光体と異なり人体に対して無害でかつ耐熱
性及び耐摩耗性に優れており、高い光導電性ｒ有する優
れた感光体でめる。
しかし、上記感光体と同様は、なお耐湿性、耐コロナイ
オン性に欠１するという欠点0. Field of Industrial Application The present invention relates to a latent image forming apparatus using an amorphous silicon electrostatic latent image carrier. (b) Conventional technology Conventionally, the electrophotographic process has been carried out in a static manner. Inorganic materials such as amorphous selenium, cadium sulfide, and zinc oxide, and organic materials such as polyvinylcarbazole and todinitron fluorenone are used as the photoreceptor (hereinafter referred to as photoreceptor). Since photosensitivity is insufficient when used alone, it is safe to use a sensitizer or the like in combination. Therefore,
In recent years, amorphous silicon has attracted attention due to its high photoconductivity, and has been used as a photoreceptor. Amorphous silicon, unlike the above photoconductors, is harmless to the human body, has excellent heat resistance and abrasion resistance, and is an excellent photoconductor having high photoconductivity. However, similar to the above photoreceptor, it still has the disadvantage of lacking moisture resistance and corona ion resistance.
【有している。
（ハ） 発明が解決しようとする問題点前述のように従
来の技術では、帯電工程において、Ｉ：ｉｔ、応生成物
すなわちコロナ放電によるイオン等の感光体表面への付
着が空気中の水分ｔ−誘導し、表面伝導會ひき起こす。
そのため、感光体として使用する場合は、像のにじみ金
引き起こすという欠点ｋＮしていた。
本発明は、斯る従来の技術の酸点に鑑みてなされたもの
で、感光体の結ＩＸｔ−防止すると共は、耐吸湿性に向
上させることｒ企図せんとするものである。
に）問題点を解決するための手段
本発明は、水素が含有されているアモルファスシリコン
系の感光体を一様に帯電させる帯電手段と、帯電された
前記感光体上を選択的に露光する露光手段とが具備され
ている静１１ＬＩＷ像形成装置において、前記帯′或手
段の前工程にて、ＭＪ記感感光に疎水性物質を付着させ
る付着手段が備えられていることｔ特徴とする静電潜像
形成装置である。
（ホ）作 用
帯電工程の前工程においτ、疎水性物質をア元体の表面
に疎水性物質による薄膜が形成され、多湿環境において
も吸湿、結ｇｈ防止できる。従りて、像形成時に像のに
じみが発生することはない〇
（へ）実施例
第１図は本発明の一夾施例としての電子複写Ｍ全概念的
に示す構成図である。ここで（１）は、ドラム状導電性
基体の表面に水素【含むアモルファスシタコン系感光層
を形成した感光体あるいは、感光体表面金プラズマ重合
法による疎水性ポリマー膜でコートした感光体で、（２
）は帯電器、（３）は露光光源、（４）は現像器、（５
）は転写定着器、（６）は除電光源、（７Ｊは感光体表
面のクリーニングのためのククー二ングブレード、（８
〕は疎水性有機物を感光体表面に噴霧するためのノズル
そして（９）は感光体表面に噴霧され次疎水性有機物の
−ｆｆＩＳｔ除去する几めのブレードでるる。
なお、上記疎水性有機物は、疎水基會七の構造中に有す
るもので、アル中ル鎖艮が炭素原子数にして０６〜Ｃ１
ｇの鎖状炭化水素ある＋７−１はそのハロゲン化物が望
ましく、さらに例えばつｙデカンのような直鎖が望まし
９゜
また他の疎水性有機物として芳香族炭化水素やそのハロ
ゲン化物あるいはγルキル鎖長が炭素原子数にしてＣ６
〜Ｃ１８の鎖状炭化水素基金もつ芳香族炭化水素やその
ハロゲン化物を用いることがテキル。具体的にはアリル
ベンゼン、エチルトルエン、塩化ベンジルを挙げること
ができる。なお、これら疎水性有機物は′線温付近で液
体であることが菫よしい。
更は、前記感光体表面に噴霧された疎水性有機物の一部
を除去するためのブレード（９）は、布製あるいはスポ
ンジ性あるいはゴム注のものが望ましい＠
また前記プラズマ重合法による疎水性ポリマー膜は、上
記疎水性有機物ｔモノマーとすることが望ましｈｏ
次は、前記疎水性有機物ｔｏ！用して行った実験内容お
よびその結果について説明する。
水ｙｔ−含むアモルファスシリコン系感光体（１ンの表
面は、前記ノズル（８）より疎水性有ｎ物であるウンデ
カンＣＨ３（ＣＨ２）ＣＨ３％ｚ一様に噴霧し、前記グ
レード（９）にて余分な疎水性有機物【除去するととも
は、噴霧し念疎水性有機物を前記感光体（１】の表面に
なじませる。その後、前記ｆｒ電器（２）にてコロナ電
圧＋６ＫＶで前記感光体（１）を一様に帯電し、前記ｇ
尤元源（３）に白色光を用４靜電潜ＩＪｌｉ”ｋ形成す
る。このと８ＷｔＩ記疎水性有機物の膜厚Ｆ′１１０Ａ
〜１ｐｍ、好ましくＵ、１００Ａ 〜５０００ Ａと非
常に薄いため、キャリアのトンネリングにより静電潜像
が形成される。さらに前記現像器（４）にて、前記ｔ７
ｍ１９Ｆｍｔ−）ナー現像し、前記転写定着器（５）に
て普通紙にトナー像を形成する。
その後前ｍｌ感光体（１）は、前記除１！ｃ元源（６）
にて除電され、前記クリーニングブレード（７）にてり
９−ユングされる。この一連の工程上、雰囲気温度２５
℃、湿度６０〜８０％の各条件において、１万枚ずつの
通続コピーを行ない、その最終コピーの画ｇＲ金従来例
と対比して評価したところ、第１表のような結果となり
た。
ｗ、１表
また、エチルトルエンｔモノマーとしプラズマ夏合法１
ＣＪ−りて、七の表面を疎水性ポリマー膜でコートした
前ｆｉｔＪ索を含むアモルファスシリコン系感光体（１
）會用い、前述と同僚にして雰囲気温度２５℃、湿度６
０勺８０９６の各条件において１万枚ずつの連続コピー
を行ない、その最長コピーの画像【前述と同様ＶＣ評価
したところ、下Ｍｒ２第２表のよりな結果となりた。
第 ２ 表
斯様は、本発明冥施例装置と従来例との間に差異が生じ
るのは、次のような理由による。
即ち、第２図に感光体（１）の表面近傍の断面？模式的
に示すよりは、感光体（ＩＪ上に疎水基σＱが形成され
ており、前記感光体（１）上に多湿環境ろるＶ％は、コ
ロナ帯電時の反応生成物、とりわＣナイオンによりて生
成した親水基Ｕが存在しても、前記感光体（１）の表面
に成層及び結露が防止された状態となるため、良好な画
像が得られるのである。
なお、前記冥施例では、疎水性物質はいずれもノズル（
８）によって噴霧されるが、スポンジローラ等の手段に
よって塗布されるように構成されていてもよい。
（ト］発明の効果
本発明では、帯電工程の前工程九で感光体に疎水性物質
上付着させるので、多湿環境にあっても感光体に吸湿、
結露することはない。
従って、従来の技術におけるとｔｉ８ｉＪ様な現象は生
ぜず、像形成時に像のにじみが発生することはないＯ[I have it. (c) Problems to be Solved by the Invention As mentioned above, in the conventional technology, in the charging process, I:it, reaction products, i.e., ions due to corona discharge, are attached to the surface of the photoreceptor due to moisture in the air. - induces and causes surface conduction. Therefore, when used as a photoreceptor, it has the drawback of causing blurring of the image. The present invention has been made in view of the acid sites of the prior art, and is intended to prevent formation of photoreceptors and to improve moisture absorption resistance. B) Means for Solving the Problems The present invention provides a charging means for uniformly charging an amorphous silicon photoconductor containing hydrogen, and an exposure device for selectively exposing the charged photoconductor to light. 11. The electrostatic LIW image forming apparatus is characterized in that an adhesion means for adhering a hydrophobic substance to the MJ-recorded photosensitive material is provided in a pre-process of the band' or the means. It is a latent image forming device. (E) Function In the pre-charging step, a thin film of the hydrophobic substance is formed on the surface of the atom body, which can prevent moisture absorption and freezing even in a humid environment. Therefore, image blur does not occur during image formation. Embodiment FIG. 1 is a conceptual diagram showing the entire structure of an electronic copy M as one embodiment of the present invention. Here, (1) is a photoreceptor in which an amorphous Citacon-based photosensitive layer containing hydrogen is formed on the surface of a drum-shaped conductive substrate, or a photoreceptor whose surface is coated with a hydrophobic polymer film formed by gold plasma polymerization. (2
) is a charger, (3) is an exposure light source, (4) is a developer, (5
) is a transfer fixing device, (6) is a static eliminating light source, (7J is a cleaning blade for cleaning the surface of the photoreceptor, (8
] is a nozzle for spraying a hydrophobic organic substance onto the photoreceptor surface, and (9) is a fine blade for removing -ffISt of the hydrophobic organic substance after being sprayed onto the photoreceptor surface. In addition, the above-mentioned hydrophobic organic substance has a hydrophobic group in the structure, and the alkyl chain has a carbon atom number of 06 to C1.
+7-1, which is a chain hydrocarbon in g, is preferably a halide thereof, and more preferably a straight chain such as y-decane, and other hydrophobic organic substances include aromatic hydrocarbons, their halides, or gamma-alkyl. Chain length is C6 in terms of number of carbon atoms
It is preferable to use aromatic hydrocarbons having a chain hydrocarbon base of ~C18 or their halides. Specific examples include allylbenzene, ethyltoluene, and benzyl chloride. Note that it is preferable that these hydrophobic organic substances are liquid at around the linear temperature. Furthermore, the blade (9) for removing a portion of the hydrophobic organic matter sprayed onto the surface of the photoreceptor is preferably made of cloth, sponge, or rubber. is preferably the above-mentioned hydrophobic organic substance t monomer. Next, the above-mentioned hydrophobic organic substance to! We will explain the details of the experiment conducted using the system and its results. The surface of the amorphous silicon photoreceptor (1) containing water was uniformly sprayed with undecane CH3 (CH2) CH3%z, which is a hydrophobic substance, from the nozzle (8) and treated with the grade (9). Excess hydrophobic organic matter (removal means spraying to make the hydrophobic organic matter blend onto the surface of the photoreceptor (1). After that, use the FR electric appliance (2) to apply a corona voltage of +6 KV to the photoreceptor (1). is uniformly charged, and the g
Using white light as the source (3), 4 electrostatic latent IJli''k is formed.
Since it is very thin, ~1 pm, preferably U, 100 A ~ 5000 A, an electrostatic latent image is formed by tunneling of the carrier. Further, in the developing device (4), the t7
m19Fmt-) toner development is performed, and a toner image is formed on plain paper in the transfer fixing device (5). After that, the front ml photoreceptor (1) is removed from the above 1! c original source (6)
The static electricity is removed by the cleaning blade (7), and the cleaning blade (7) removes the static electricity. Due to this series of steps, the ambient temperature is 25
℃ and humidity of 60 to 80%, 10,000 sheets were successively copied, and the images of the final copies were evaluated in comparison with the conventional example, and the results shown in Table 1 were obtained. w, Table 1 Also, plasma summer method 1 with ethyltoluene t monomer
An amorphous silicon-based photoreceptor (1
) When using a meeting, the atmosphere temperature was 25℃ and the humidity was 6.
Continuous copying of 10,000 sheets was carried out under each condition of 0.8096, and the image of the longest copy was subjected to VC evaluation in the same manner as above, and the results shown in Table 2 of Mr2 below were obtained. In the second aspect, the reason why there is a difference between the apparatus according to the present invention and the conventional example is as follows. That is, FIG. 2 shows a cross section near the surface of the photoreceptor (1). Rather than schematically showing it, a hydrophobic group σQ is formed on the photoreceptor (IJ), and V% in a humid environment on the photoreceptor (1) is a reaction product during corona charging, especially C nanoion. Even if the hydrophilic group U generated by the method is present, a good image can be obtained because layer formation and dew condensation are prevented on the surface of the photoreceptor (1). , hydrophobic substances are all removed from the nozzle (
8), but it may be configured to be applied by means such as a sponge roller. (G) Effects of the Invention In the present invention, since a hydrophobic substance is attached to the photoconductor in step 9 before the charging process, even in a humid environment, the photoconductor does not absorb moisture.
There will be no condensation. Therefore, in the conventional technology, a phenomenon like ti8iJ does not occur, and image blur does not occur during image formation.
図面はいずれも本発明の一笑施例金示し、第１図は電子
複写機の概念図、第２図は感光体の表面近傍の断面の模
式図である。
（１）・・・感光体（静電潜像坦持体）、（２）・・・
帯電器（帯電手段）、（３１・・・露光光源（露光手段
）、（８）・・・ノズル（噴霧手段）、ａト・疎水基、
σＤ・・・親水基。The drawings all show an exemplary embodiment of the present invention; FIG. 1 is a conceptual diagram of an electronic copying machine, and FIG. 2 is a schematic cross-sectional diagram of the vicinity of the surface of a photoreceptor. (1)...Photoreceptor (electrostatic latent image carrier), (2)...
Charger (charging means), (31... exposure light source (exposure means), (8)... nozzle (spraying means), a-hydrophobic group,
σD...Hydrophilic group.
Claims (1)
電潜像坦持体を一様に帯電させる帯電手段と、帯電され
た前記静電潜像坦持体上を選択的に露光する露光手段と
が具備されている静電潜像形成装置において、 前記帯電手段の前工程にて、前記静電潜像坦持体に疎水
性物質を付着させる付着手段が備えられていることを特
徴とする静電潜像形成装置。 ２、疎水性物質は、有機物である特許請求の範囲第１項
に記載の静電潜像形成装置。 ３、付着手段は、疎水性物質を噴霧する手段である特許
請求の範囲第１項若しくは第２項に記載の静電潜像形成
装置。 ４、付着手段は、疎水性物質を塗布する手段である特許
請求の範囲第１項若しくは第２項に記載の静電潜像形成
装置。 ５、疎水性有機物は、鎖状炭化水素基または芳香族炭化
水素基のいずれかを、主に含有している特許請求の範囲
第２項に記載の静電潜像形成装置。 ６、疎水性有機物は、ハロゲン化アルキル基（ＲＸ−）
またはオルガノシリコン基（ＲＳｉ（ＣＨ＿３）＿２−
）のいずれかを、主に含有している特許請求の範囲第２
項に記載の静電潜像形成装置。 ７、疎水性物質を付着することによって形成される静電
潜像坦持体上の疎水性物質膜の厚さは、１０Åないし１
μｍである特許請求の範囲第１項ないし第６項のいずれ
かに記載の静電潜像形成装置。[Claims] 1. Charging means for uniformly charging an amorphous silicon-based electrostatic latent image carrier containing hydrogen, and selectively charging the charged electrostatic latent image carrier. An electrostatic latent image forming apparatus is provided with an exposure means for exposing to light, and an adhesion means for adhering a hydrophobic substance to the electrostatic latent image carrier in a step before the charging means is provided. An electrostatic latent image forming device characterized by: 2. The electrostatic latent image forming device according to claim 1, wherein the hydrophobic substance is an organic substance. 3. The electrostatic latent image forming apparatus according to claim 1 or 2, wherein the adhesion means is a means for spraying a hydrophobic substance. 4. The electrostatic latent image forming apparatus according to claim 1 or 2, wherein the adhesion means is a means for applying a hydrophobic substance. 5. The electrostatic latent image forming device according to claim 2, wherein the hydrophobic organic substance mainly contains either a chain hydrocarbon group or an aromatic hydrocarbon group. 6. The hydrophobic organic substance is a halogenated alkyl group (RX-)
or organosilicon group (RSi(CH_3)_2-
) Claim 2 mainly contains any of the following:
The electrostatic latent image forming device described in 2. 7. The thickness of the hydrophobic substance film on the electrostatic latent image carrier formed by adhering the hydrophobic substance is 10 Å to 1
The electrostatic latent image forming device according to any one of claims 1 to 6, wherein the electrostatic latent image forming device is μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24890486A JPS63103284A (en) | 1986-10-20 | 1986-10-20 | Electrostatic latent image forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24890486A JPS63103284A (en) | 1986-10-20 | 1986-10-20 | Electrostatic latent image forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63103284A true JPS63103284A (en) | 1988-05-07 |
Family
ID=17185160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24890486A Pending JPS63103284A (en) | 1986-10-20 | 1986-10-20 | Electrostatic latent image forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63103284A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008233241A (en) * | 2007-03-16 | 2008-10-02 | Ricoh Co Ltd | Protection agent, protection film forming device, process cartridge, image forming apparatus and image forming method |
-
1986
- 1986-10-20 JP JP24890486A patent/JPS63103284A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008233241A (en) * | 2007-03-16 | 2008-10-02 | Ricoh Co Ltd | Protection agent, protection film forming device, process cartridge, image forming apparatus and image forming method |
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