JPS6292325A - Drier for wafer - Google Patents
Drier for waferInfo
- Publication number
- JPS6292325A JPS6292325A JP23185385A JP23185385A JPS6292325A JP S6292325 A JPS6292325 A JP S6292325A JP 23185385 A JP23185385 A JP 23185385A JP 23185385 A JP23185385 A JP 23185385A JP S6292325 A JPS6292325 A JP S6292325A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- organic solvent
- carrier
- solvent
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造装置に関し、特にウェハーの
乾燥装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device manufacturing apparatus, and particularly to a wafer drying apparatus.
従来、ウェハー乾燥装置の１つの方式として、有機溶剤
を用いて、ウェハー表面の水分と有機溶剤を置換させ、
その後に、有機溶剤を気化することにより乾燥する方法
がある。この従来の装置は、ウェハー処理機構（洗浄、
エツチング、 ｅｔｃ ）の後段に置かれ、水分と有機
溶剤との置換及び溶剤の乾燥を行なう乾燥機構とウェノ
−−の搬送機構とから構成されている。Conventionally, one method of wafer drying equipment is to use an organic solvent to replace the moisture on the wafer surface with the organic solvent.
After that, there is a method of drying by vaporizing the organic solvent. This conventional equipment has a wafer processing mechanism (cleaning,
It is placed after etching, etc.) and is comprised of a drying mechanism that replaces moisture with an organic solvent and dries the solvent, and a wafer conveyance mechanism.
従来の装置によると、ウェノ−−」二の水分と有機溶剤
とを置換し、その後に溶剤を気化しているだけの為に、
ウェハー乾燥後に残留する有機溶剤の量が常に問題とな
っている。残留した有機溶剤は、その後の熱処理工程（
酸化、拡散、 ｅｔｃ ）にて熱分解され、ウェハー表
面にＣ原子を残し、その後の熱酸化工程で結晶欠陥発生
の原因となる。又、 □ダート酸化等の薄い酸化膜
を形成する工程の前に適用すると酸化膜の部分的な劣化
の原因となる等の欠点を有している。According to conventional equipment, the water content in the wafer and the organic solvent are replaced, and the solvent is then vaporized.
The amount of organic solvent remaining after wafer drying has always been a problem. The remaining organic solvent is removed during the subsequent heat treatment process (
It is thermally decomposed by oxidation, diffusion, etc., leaving carbon atoms on the wafer surface, which causes crystal defects in the subsequent thermal oxidation process. Moreover, if it is applied before a step of forming a thin oxide film such as dirt oxidation, it has the disadvantage that it may cause partial deterioration of the oxide film.
本発明は前記問題点を解消し、ウエノ凡−表面上に残留
する有機溶剤を除去するウェノ・−乾燥装置 □を
提供するものである。The present invention solves the above-mentioned problems and provides a wafer drying apparatus which removes the organic solvent remaining on the surface of the wafer.
本発明はウェハー表面の水分と有機溶剤を置換する機構
と、溶剤を気化した後に、ＵＶ光により生じたオゾンガ
スにウェハー表面をさらして有機溶剤を除去する機構と
を有することを特徴とするウェハー乾燥装置である。The present invention is characterized by having a mechanism for replacing moisture on the wafer surface with an organic solvent, and a mechanism for removing the organic solvent by exposing the wafer surface to ozone gas generated by UV light after the solvent has been vaporized. It is a device.
次に、本発明の一実施例について図面を参照して説明す
る。Next, an embodiment of the present invention will be described with reference to the drawings.
第１図は本発明のウェハー乾燥装置を使用した装置の機
構構成のブロック図である。図において、本発明装置は
前段の処理機構１３と、揮発生が高くかつ水溶性の有機
溶剤、又は前記有機溶剤の蒸気にウェハーを接触させて
ウェハー表面の水分を溶剤と置換する置換処理機構１４
とＵＶ光照射によるオゾン（０３）ガス発生によりウェ
ハー表面の処理を行なう、表面処理機構１２とを有する
。前段の処理機構１３は従来と同様な構成のものを用い
る。FIG. 1 is a block diagram of the mechanical configuration of an apparatus using the wafer drying apparatus of the present invention. In the figure, the apparatus of the present invention includes a processing mechanism 13 at the front stage, and a replacement processing mechanism 14 that brings the wafer into contact with a highly volatile and water-soluble organic solvent or the vapor of the organic solvent to replace moisture on the wafer surface with the solvent.
and a surface treatment mechanism 12 that processes the wafer surface by generating ozone (03) gas by irradiating UV light. The processing mechanism 13 at the front stage uses a structure similar to the conventional one.
第２図は、上記ブロック図で示す置換処理機構１４と表
面処理機構１２との具体的な実施例を示す縦断面図であ
る。ウェハーの入ったキャリアを洗浄等の処理をした後
のゾール槽１からキャリア搬送機２で、ウェハー上の水
分と有機溶剤とを置換するために置換槽３に搬入する。FIG. 2 is a vertical sectional view showing a specific example of the replacement processing mechanism 14 and the surface treatment mechanism 12 shown in the block diagram. After the carrier containing the wafer has been subjected to processing such as cleaning, it is transported from the sol tank 1 to a replacement tank 3 by a carrier transporter 2 in order to replace the moisture and organic solvent on the wafer.
有機溶剤４はヒーター５で加熱され、槽３の内部は有機
溶剤の蒸気で満たされており、冷却部１］で槽外に溶剤
の蒸気が流出しない様にされている。槽３内にウェハー
を所定時装置いた後に取り出し、この処理剤ウェハーを
キャリア７に収納したままで搬送機２で表面処理用の搬
送機１ｏに移し替える。次に搬送機１０でキャリア７を
表面処理機構１２の中に運ぶ。The organic solvent 4 is heated by a heater 5, and the inside of the tank 3 is filled with organic solvent vapor, and a cooling section 1 prevents the solvent vapor from flowing out of the tank. After the wafer has been in the tank 3 for a predetermined time, it is taken out, and the processing agent wafer is transferred, while being stored in the carrier 7, to the surface treatment transport machine 1o using the transport machine 2. Next, the carrier 7 is transported into the surface treatment mechanism 12 by the transport machine 10.
この表面処理機構１２はドアー９、排気ダクト６、匠光
ランｆ８から構成されており、内部にキャリア７を搬入
した後に、ＵＶランゾ８よりＵＶ光を照射シ、オゾン（
０３）ガスを発生させる。キャリア７内のウェハー表面
をこのオゾン（ｏ３）ガスにさらすことにより、ウェハ
ー表面の有機的な残留分を除去することができる。次に
、キャリア７をドアー９から外に運び出し、次の所望の
装置に搬送することとなる。This surface treatment mechanism 12 is composed of a door 9, an exhaust duct 6, and a Takumiko run f8. After carrying the carrier 7 inside, UV light is irradiated from the UV run 8, and ozone (
03) Generate gas. By exposing the wafer surface within the carrier 7 to this ozone (O3) gas, organic residues on the wafer surface can be removed. Next, the carrier 7 is carried out through the door 9 and transported to the next desired device.
［発明の効果〕
以上説明したように本発明は、ウェハーを揮発性が高く
かつ水溶性の有機溶剤、又は有機溶剤の蒸気にさらすこ
とにより、ウェハー表面の水分を溶剤と置換する機構と
、溶剤を蒸発させた後に■光により発生したオゾン（０
３）ガスにさらし、ウェハー表面の有機性残留物を除去
する機構とを有することにより、ウェハー表面に有機性
残留物が存在せず、ウェハー乾燥後のウェハー表面の清
浄度をより向上できる効果がある。[Effects of the Invention] As explained above, the present invention provides a mechanism for replacing water on the wafer surface with a solvent by exposing the wafer to a highly volatile and water-soluble organic solvent or organic solvent vapor; After evaporating ■ ozone (0) generated by light.
3) By having a mechanism that removes organic residue on the wafer surface by exposing it to gas, there is no organic residue on the wafer surface, and the cleanliness of the wafer surface after drying can be further improved. be.
第１図は本発明の一実施例を示すブロック図である。第
２図は、本発明の具体的な実施例を示す主要部縦断面図
である。
１・・・プール槽、２・・・搬送機、３・・・置換槽、
４・・・有機溶剤、５・・・ヒーター、６・・・排気ダ
クト、７・・・キャリア、８・・・ＵＶ光ランプ、９・
・・ドアー、１ｏ・・・搬送機、１１・・・冷却部、１
２・・・表面処理機構、１４・・・置換処理機構。FIG. 1 is a block diagram showing one embodiment of the present invention. FIG. 2 is a longitudinal cross-sectional view of main parts showing a specific embodiment of the present invention. 1... Pool tank, 2... Transfer machine, 3... Replacement tank,
4... Organic solvent, 5... Heater, 6... Exhaust duct, 7... Carrier, 8... UV light lamp, 9...
...Door, 1o...Transporter, 11...Cooling section, 1
2...Surface treatment mechanism, 14...Replacement treatment mechanism.
Claims (1)
が高くかつ水溶性の有機溶剤、又は前記有機溶剤の蒸気
にウェハーを接触させて、ウェハー表面の水分を溶剤と
置換する機構と、溶剤を蒸発させた後にＵＶ光により発
生したオゾンにさらし、ウェハー表面の有機性残留物を
除去する機構とを有することを特徴とするウェハー乾燥
装置。(1) In wafer drying equipment for semiconductor manufacturing, there is a mechanism that replaces water on the wafer surface with the solvent by bringing the wafer into contact with a highly volatile and water-soluble organic solvent or the vapor of the organic solvent, and a mechanism that evaporates the solvent. 1. A wafer drying apparatus comprising: a mechanism for removing organic residues on a wafer surface by exposing the wafer to ozone generated by UV light after drying the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23185385A JPS6292325A (en) | 1985-10-17 | 1985-10-17 | Drier for wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23185385A JPS6292325A (en) | 1985-10-17 | 1985-10-17 | Drier for wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6292325A true JPS6292325A (en) | 1987-04-27 |
Family
ID=16930039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23185385A Pending JPS6292325A (en) | 1985-10-17 | 1985-10-17 | Drier for wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6292325A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140114298A (en) * | 2013-03-18 | 2014-09-26 | 시바우라 메카트로닉스 가부시끼가이샤 | Device and method for processing substrate |
| EP2782128A3 (en) * | 2013-03-18 | 2014-10-22 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
| US9553003B2 (en) | 2013-03-18 | 2017-01-24 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218037A (en) * | 1985-07-17 | 1987-01-27 | Wakomu:Kk | Pass-through room |
-
1985
- 1985-10-17 JP JP23185385A patent/JPS6292325A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218037A (en) * | 1985-07-17 | 1987-01-27 | Wakomu:Kk | Pass-through room |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140114298A (en) * | 2013-03-18 | 2014-09-26 | 시바우라 메카트로닉스 가부시끼가이샤 | Device and method for processing substrate |
| EP2782128A3 (en) * | 2013-03-18 | 2014-10-22 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
| EP2782127A3 (en) * | 2013-03-18 | 2014-10-29 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
| US9553003B2 (en) | 2013-03-18 | 2017-01-24 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
| US9607865B2 (en) | 2013-03-18 | 2017-03-28 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
| US10276406B2 (en) | 2013-03-18 | 2019-04-30 | Shibaura Mechatronics Corporation | Substrate processing device and substrate processing method |
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