JPS63303082A - Treating apparatus - Google Patents
Treating apparatusInfo
- Publication number
- JPS63303082A JPS63303082A JP13487087A JP13487087A JPS63303082A JP S63303082 A JPS63303082 A JP S63303082A JP 13487087 A JP13487087 A JP 13487087A JP 13487087 A JP13487087 A JP 13487087A JP S63303082 A JPS63303082 A JP S63303082A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- substrate
- processing
- dry
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000012545 processing Methods 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 24
- 238000004140 cleaning Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 238000009832 plasma treatment Methods 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 2
- 230000004048 modification Effects 0.000 abstract description 2
- 238000009736 wetting Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 238000007796 conventional method Methods 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005320 surfactant adsorption Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体基板などを処理する装置に係り、特に
微細パターンを有する半導体基板を処理するのに好適な
処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for processing semiconductor substrates and the like, and particularly to a processing apparatus suitable for processing semiconductor substrates having fine patterns.
半導体製品製造工程において、エツチング、洗浄を目的
とした液処理が広く行われている。しかし、処理液の表
面張力が大きい場合、処理時に表面の濡れ、及び微細な
パターンへの液の浸透が不良となり処理ムラが発生する
。この様な問題を解決する為、処理液に有機溶媒や界面
活性剤を添加し、処理液の表面張力を低下させる方法が
提案されている（特開昭６１−４１７８１ ） 。In the manufacturing process of semiconductor products, liquid processing for the purpose of etching and cleaning is widely performed. However, if the surface tension of the processing liquid is high, wetting of the surface and penetration of the liquid into fine patterns during processing will be poor, resulting in uneven processing. In order to solve this problem, a method has been proposed in which an organic solvent or a surfactant is added to the treatment liquid to lower the surface tension of the treatment liquid (Japanese Patent Laid-Open No. 41781/1983).
上記従来技術は、添加した有機溶媒及び界面活性剤によ
る後の工程への影響についての配慮がされておらず、処
理後の基板表面に界面活性剤等の有機物吸着層が形成さ
れ、後の工程で有機汚染物として作用するという問題が
あった。The above conventional technology does not take into account the influence of added organic solvents and surfactants on subsequent processes, and an organic matter adsorption layer such as surfactants is formed on the substrate surface after processing, resulting in subsequent processes. There was a problem that it acted as an organic contaminant.
本発明の目的は、処理後の基板表面に有機物吸着層を形
成する事なく、微細なパターンを持つ基板を均一に処理
する処理装置を与える事にある。An object of the present invention is to provide a processing apparatus that can uniformly process a substrate having a fine pattern without forming an organic adsorption layer on the surface of the substrate after processing.
上記目的は、基板に対し液体を用いて処理を行う湿式処
理槽の前に紫外線照射装置や、プラズマ処理装置を具備
する乾式処理槽を配置する事により達成される。The above object is achieved by arranging a dry processing tank equipped with an ultraviolet irradiation device and a plasma processing device in front of a wet processing tank that processes substrates using a liquid.
基板表面には、紫外線照射やプラズマ処理により、その
表面に高表面張力を持つ改質層が形成される。それによ
って処理液の表面張力よりも基板表面の表面張力が大き
くなり、基板表面に対する処理液の濡れ性が向上し、微
細なパターンを均一に処理する事が出来る。A modified layer with high surface tension is formed on the surface of the substrate by ultraviolet irradiation or plasma treatment. As a result, the surface tension of the substrate surface becomes larger than the surface tension of the processing liquid, improving the wettability of the processing liquid to the substrate surface, and making it possible to uniformly process fine patterns.
以下、本発明の一実施例を第１図から第７図により説明
する。An embodiment of the present invention will be described below with reference to FIGS. 1 to 7.
処理装置！１８には、ローダ１９ａ、乾式処理槽３、湿
式処理槽６．アンローダ１９ｂが具備されている。−例
として、被処理基板をＳｉウェハ２とする。乾式処理槽
３内には、Ｓｉウェハ２ｂの載置部を有するテーブル１
０ａが回転軸１１ａ上に設けられている。テーブル１０
ａの上部には紫）外線灯５が設けられている。Ｓ外線灯
５は、例えば、１８４．９ｎｍや２５３．７ｎｍの波長
を含む紫外線をＳｉウェハ２ｂに向けて照射する。乾式
処理槽３の側部には、開閉可能なシャッター４ａ、４ｂ
が形成され、上部には導入口２０ａ、底部には排気口２
０ｂが形成されている。湿式処理槽６は上部６ｂと下部
６ａから成り、湿式処理槽下部６ａは上下動可能である
。湿式処理槽６内には、Ｓｉウェハ２ｃの載置部を有す
るテーブル１０ｂが回転軸１１ｂ上に設けられている。Processing equipment! 18 includes a loader 19a, a dry processing tank 3, a wet processing tank 6. An unloader 19b is provided. - As an example, assume that the substrate to be processed is a Si wafer 2. Inside the dry processing tank 3, there is a table 1 having a placement part for the Si wafer 2b.
0a is provided on the rotating shaft 11a. table 10
An ultraviolet (UV) light 5 is provided at the upper part of a. The S external lamp 5 irradiates the Si wafer 2b with ultraviolet light including wavelengths of 184.9 nm and 253.7 nm, for example. On the side of the dry treatment tank 3, there are shutters 4a and 4b that can be opened and closed.
is formed, with an inlet 20a at the top and an exhaust port 2 at the bottom.
0b is formed. The wet processing tank 6 consists of an upper part 6b and a lower part 6a, and the lower part 6a of the wet processing tank is movable up and down. Inside the wet processing tank 6, a table 10b having a mounting portion for the Si wafer 2c is provided on a rotating shaft 11b.
テーブル１０ｂの上部には液吐出口９とＮｚガス吐出口
８が設けられ、側部には排気ロアｂが、底部には排液ロ
アａが設けられている。液吐出口９からは、例えばＨｚ
ＯＨＦ の混合比が４：１の処理液１２や、すすぎ用の
純水が吐出される。ローダ１１９ａは、処理前Ｓｉウェ
ハ２ａを積載したキャリア１ａの載置部を有する。アン
ローダ１９ｂは、処理後Ｓｉウェハ２ｄを収容するキャ
リア１ｂの載置部を有する。第１図では、Ｓｉウェハ２
をローダ１９ａから乾式処理槽３へ、乾式処理槽３から
湿式処理槽６へ、湿式処理槽６からアンローダ１９ｂへ
搬送する機構は省略して示しである。A liquid discharge port 9 and a Nz gas discharge port 8 are provided at the top of the table 10b, an exhaust lower b is provided at the side, and a drain lower a is provided at the bottom. From the liquid discharge port 9, for example, Hz
A processing liquid 12 with an OHF mixing ratio of 4:1 and pure water for rinsing are discharged. The loader 119a has a mounting section for a carrier 1a on which unprocessed Si wafers 2a are loaded. The unloader 19b has a placement part for the carrier 1b that accommodates the processed Si wafer 2d. In FIG. 1, the Si wafer 2
The mechanism for transporting the liquid from the loader 19a to the dry processing tank 3, from the dry processing tank 3 to the wet processing tank 6, and from the wet processing tank 6 to the unloader 19b is omitted.
この様に構成された処理装Ｗ１１８によれば、先ずシャ
ッター４ａを開け、被処理基板であるＳｉウェハ２をロ
ーダ１９ａから搬送して乾式処理槽内のテーブル１０ａ
上に載置した後シャッター４ｂを閉じる１次いで導入口
２０ａから酸素を含む気体、例えばオゾンと酸素の混合
気体を導入し、テーブル１０ａを回転させ、紫外線灯５
によって紫外線をＳｉウェハ２に照射して、Ｓｉウェハ
２上に酸化膜改質層１３を形成する。この改質層１３の
厚さは、例えば２５３．７ｎ−の紫外線の照度が１０ｍ
Ｗ／ｄ、 １８４．９ｎｉｚと２５３．７ｎｍの紫外線
強度が１２１０、大気雰囲気温度４５℃と照射時間１分
間の条件で約５人であり、その濡れ性は、純水との接触
角で４＠以下にまで高められる０次いでシャッター４ｂ
を開け、湿式処理槽下部６ａを降下し。According to the processing apparatus W118 configured in this way, first, the shutter 4a is opened, and the Si wafer 2, which is the substrate to be processed, is transferred from the loader 19a to the table 10a in the dry processing tank.
After placing the table 10a on the table 10a, close the shutter 4b. Next, introduce a gas containing oxygen, for example, a mixed gas of ozone and oxygen, from the inlet 20a, rotate the table 10a, and turn on the ultraviolet lamp 5.
By irradiating the Si wafer 2 with ultraviolet rays, a modified oxide layer 13 is formed on the Si wafer 2. The thickness of this modified layer 13 is such that, for example, the illumination intensity of 253.7n- ultraviolet rays is 10m.
W/d, 184.9niz, UV intensity of 253.7nm is 1210, atmospheric temperature is 45℃, irradiation time is about 5 people under the conditions of 1 minute, and its wettability is 4@ 0 then shutter 4b raised to below
, and lower the lower part 6a of the wet treatment tank.
Ｓｉウェハ２をテーブル１０ａから搬送してテーブル１
０ｂに載置した後湿式処理槽下部６ａを上昇させる０次
いでテーブル１０ｂを回転させながら、液吐出口９より
処理液１２を吹きつけて処理を行う、この処理では第２
図に示す様に、Ｓｉウ ）エバ２の濡れ性が高い為、隅
部２ｅに空隙１４を生ずる。一方、界面活性用人処理液
１５を使用する従来の方法では、第３図に示す様、隅部
２ｅにまで処理液１２が浸透する。これに対し乾式処理
を行わない従来の方法では第４図に示す様に、Ｓｉウェ
ハ２の濡れ性が低く、隅部２ｅにまで液１５は浸透する
。処理終了後、液吐出口９より純水を吹きつけすすぎを
行い、この際生ずる排液は排液ロアａから排出される。Transfer the Si wafer 2 from the table 10a to the table 1
0b, the lower part 6a of the wet processing tank is raised. Next, processing is performed by spraying the processing liquid 12 from the liquid discharge port 9 while rotating the table 10b. In this process, the second
As shown in the figure, since the wettability of the Si evaporator 2 is high, a void 14 is formed at the corner 2e. On the other hand, in the conventional method using the surface active treatment liquid 15, the treatment liquid 12 penetrates into the corner 2e, as shown in FIG. On the other hand, in the conventional method in which dry processing is not performed, the wettability of the Si wafer 2 is low, as shown in FIG. 4, and the liquid 15 penetrates even into the corners 2e. After the treatment is completed, rinsing is performed by spraying pure water from the liquid discharge port 9, and the drained liquid generated at this time is discharged from the drain lower a.
その後、Ｎ２ガス吐出口８よりＮＺガスを吹きつけ、排
気ロアｂから排気を行いながらテーブル１０ｂを回転さ
せＳｉウェハ２を乾燥させる。改質層１３は処理液１２
により除去される為、Ｓｉウェハ２は乾燥後は第５図に
示す様、均一な処理面が行え、洗浄処理においては清洗
面が得られる。これに対し、乾式処理を行わない従来の
方法では第７図に示す様に、隅部２ｅの処理が行えず、
洗浄処理においては汚染１７が除去されない、一方、界
面活性用人処理液１５を使用する従来の方法では第６図
に示す様□ にＳｉウェハ２表面に界面活性剤吸着層１
６が形成されてしまい、洗浄処理においては清浄面が得
られない１次いで鍼式処理槽下部６ａｔＩ−降下し、Ｓ
ｉウェハ２をテーブル１０ｂからアンローダ１９ｂに搬
送し、キャリア１ｂに収納する。Thereafter, NZ gas is blown from the N2 gas discharge port 8, and the table 10b is rotated while exhaust is being exhausted from the exhaust lower b to dry the Si wafer 2. The modified layer 13 contains the processing liquid 12
After drying, the Si wafer 2 can be treated with a uniform surface as shown in FIG. 5, and a clean surface can be obtained in the cleaning process. On the other hand, in the conventional method that does not involve dry treatment, as shown in FIG. 7, the corner 2e cannot be treated.
In the cleaning process, the contamination 17 is not removed. On the other hand, in the conventional method using a surfactant treatment liquid 15, a surfactant adsorption layer 1 is formed on the surface of the Si wafer 2 as shown in FIG.
6 is formed, and a clean surface cannot be obtained in the cleaning process.
The i-wafer 2 is transported from the table 10b to the unloader 19b and stored in the carrier 1b.
なお乾式処理槽３内で行う表面改質処理方法としては、
上記の紫外線による処理の他に、プラズマによる処理も
有効である為、乾式処理槽３内にプラズマ発生用高周波
電極を備えた装置、外部で発生させたプラズマを乾式処
理槽３内へ運搬する機能を備えた装置も上記処理装置と
して有効である。The surface modification treatment method carried out in the dry treatment tank 3 is as follows:
In addition to the above-mentioned ultraviolet ray treatment, plasma treatment is also effective, so a device equipped with a high-frequency electrode for plasma generation inside the dry treatment tank 3, and a function to transport externally generated plasma into the dry treatment tank 3 A device equipped with this is also effective as the above processing device.
以上説明した様に、本発明に係る処理装置によれば、微
細パターンを持つ基板の均一エツチング及び高清浄度洗
浄が効果的に行える効果がある。As described above, the processing apparatus according to the present invention has the advantage that uniform etching and high-cleanliness cleaning of a substrate having a fine pattern can be effectively performed.
第１図は本発明の一実施例を示す説明図、第２図は本発
明を用いた場合の液処理状態を説明する為の断面略図、
第３図及び第４図は従来の方法を用いた場合の液処理状
態を説明する為の断面略図、第５図は本発明を用いた場
合の処理後のＳｉウェハの表面の状態を示す説明図、第
６図は及び第７図は従来の方法を用いた場合の処理後の
Ｓｉウェハの表面の状態を示す説明図である。FIG. 1 is an explanatory diagram showing one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional diagram for explaining the liquid processing state when using the present invention.
3 and 4 are schematic cross-sectional views for explaining the liquid processing state when using the conventional method, and FIG. 5 is an explanation showing the state of the surface of the Si wafer after processing when using the present invention. 6 and 7 are explanatory diagrams showing the state of the surface of a Si wafer after processing using the conventional method.
Claims (1)
する処理装置において、湿式処理槽の前に基板表面に改
質層を形成する乾式処理槽を有する事を特徴とする処理
装置。1. A processing apparatus having a wet processing tank for processing a substrate using a liquid, characterized in that it has a dry processing tank for forming a modified layer on the surface of the substrate before the wet processing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62134870A JPH07110998B2 (en) | 1987-06-01 | 1987-06-01 | Processor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62134870A JPH07110998B2 (en) | 1987-06-01 | 1987-06-01 | Processor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63303082A true JPS63303082A (en) | 1988-12-09 |
| JPH07110998B2 JPH07110998B2 (en) | 1995-11-29 |
Family
ID=15138399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62134870A Expired - Lifetime JPH07110998B2 (en) | 1987-06-01 | 1987-06-01 | Processor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07110998B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251421A (en) * | 1992-03-09 | 1993-09-28 | Nec Kyushu Ltd | Etching method |
| JP2006173260A (en) * | 2004-12-14 | 2006-06-29 | Renesas Technology Corp | Semiconductor device and manufacturing method therefor |
| US7271109B2 (en) | 1994-09-26 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying apparatus and method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348947A (en) * | 1976-10-18 | 1978-05-02 | Oki Electric Ind Co Ltd | Photoethcing method for oxidized film |
-
1987
- 1987-06-01 JP JP62134870A patent/JPH07110998B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5348947A (en) * | 1976-10-18 | 1978-05-02 | Oki Electric Ind Co Ltd | Photoethcing method for oxidized film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251421A (en) * | 1992-03-09 | 1993-09-28 | Nec Kyushu Ltd | Etching method |
| US7271109B2 (en) | 1994-09-26 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Solution applying apparatus and method |
| JP2006173260A (en) * | 2004-12-14 | 2006-06-29 | Renesas Technology Corp | Semiconductor device and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07110998B2 (en) | 1995-11-29 |
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