JPS6292323A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS6292323A JPS6292323A JP23267585A JP23267585A JPS6292323A JP S6292323 A JPS6292323 A JP S6292323A JP 23267585 A JP23267585 A JP 23267585A JP 23267585 A JP23267585 A JP 23267585A JP S6292323 A JPS6292323 A JP S6292323A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- gas
- etching
- chlorine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ドライエツチング方法に関し１％にＡｕ層を
マスクとして１８層を反応性イオンマツチングするため
のドライマツチング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry etching method, and relates to a dry etching method for reactive ion matching of 18 layers using a 1% Au layer as a mask.
Ｐｔ層を加工する場合、従来の技術としては、イオンシ
リング法を用いて、Ａｕｋマスクにして加工することが
知られている。When processing a Pt layer, it is known as a conventional technique to use an ion silling method to process the Pt layer using an Auk mask.
このような従来のＰｔ層の加工方法としてバイポーラト
ランジスタの金電極品種であるＴ、−Ｐ。As a conventional method for processing such a Pt layer, T and -P, which are gold electrode types of bipolar transistors, are used.
−Ａｕ 電極構造を例にとって説明する。まず、第２図
（ａｌのように、基板＋１１上に１１層２、Ｐ、６３を
形成する。さらにｓ Ａｕ層４を選択的に形成する。-Au electrode structure will be explained as an example. First, as shown in FIG. 2 (al), 11 layers 2, P, 63 are formed on the substrate +11. Further, an s Au layer 4 is selectively formed.
このＡｕ層４の形成は、蒸着＋リフトオフ法、蒸着＋エ
ツチング方法、Ａｕメッキ法などを用いて選択的に形成
する。次に第２図（ｂｌのようにイオンシリング法を用
いて、Ａｕ４ｔ−マスクにして・ Ｐｉ３全エツチング
加工する。次に第２図（ｃｌのように、Ａｕ膜４及びＰ
、膜３をマスクとして、Ｔｉ 膜２を反応性イオンマ
ツチングする。The Au layer 4 is selectively formed using a vapor deposition+lift-off method, a vapor deposition+etching method, an Au plating method, or the like. Next, as shown in Fig. 2 (bl), using the ion silling method, the entire Pi3 is etched using the Au4T mask.Next, as shown in Fig. 2 (cl), the Au film 4 and P3 are etched.
, Ti film 2 is subjected to reactive ion matching using film 3 as a mask.
上述した従来のイオンシリング法は、第１表に示すよう
にＡｕ膜（４）のエツチング速度が最もはやい。Ｐｔに
対して約２倍もある。As shown in Table 1, the above-mentioned conventional ion silling method has the fastest etching rate for the Au film (4). It is about twice that of Pt.
第 １ 表
したがって、第２図（ｂｌに示すように加工途中に於い
て、除去されたＰｔ膜３がＡｕ膜４の側壁に付着し、さ
らにエツチングレートの差によりＰｔ 付着物５がツノ
のようになってしまい、パリとなり電極間ショート又は
外観不良を誘発する。Therefore, as shown in FIG. 2 (bl), during processing, the removed Pt film 3 adheres to the side wall of the Au film 4, and furthermore, due to the difference in etching rate, the Pt deposits 5 form like horns. This results in the formation of cracks, which can lead to short circuits between electrodes or poor appearance.
さらｖｃＰｔをエツチングする時にＡｕが２倍マツチン
グされるため、できめがシの札の膜厚を考えて、Ａｕの
膜厚をかなシ厚く形成する必要があシ、コスト、加工精
度に於いても問題となっていた。Furthermore, since Au is matched twice when etching vcPt, it is necessary to form the Au film quite thickly, considering the film thickness of the textured tag, which reduces cost and processing accuracy. was also a problem.
本発明の目的は上記欠点を除去し、Ｐ−の反応性イオン
マツチングに於いて、再付着の発生しないマスク材のＡ
、膜がエツチングされにくくできるドライエツチング方
法を提供することでめる。The purpose of the present invention is to eliminate the above-mentioned drawbacks, and to provide a mask material that does not cause redeposition in P- reactive ion matching.
The present invention provides a dry etching method that makes it difficult for a film to be etched.
本発明によればマツチングガスとして塩累系ガスを主成
分として用い、Ａｕ系ガスなどに添加することによシＰ
ｔ膜を反応性イオンエツチングすることを有している。According to the present invention, a salt-based gas is used as a matching gas as a main component, and by adding it to Au-based gas, etc., P
t-film by reactive ion etching.
次に本発明について、図面を径照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の縦断面図である。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
まず、第１図（ａｌのように基板１上にＴｌ ２− Ｐ
ｔ ａを形成する。さらＫ Ａｕ膜４を選択的に形成す
る。First, Tl 2-P is placed on the substrate 1 as shown in FIG.
Form ta. Furthermore, a K Au film 4 is selectively formed.
このハ膜４の形成に、蒸着＋リフトオフ法、蒸着十エツ
チング法、Ａｕメ・ツキ法などケ用いて選択的に形成す
る。The film 4 is selectively formed using a vapor deposition+lift-off method, a vapor deposition/etching method, an Au plating method, or the like.
次に第１図（ｂｌのように、反応性イオンエツチング装
置を用いて、例えばマグ系トロン型反応性イオンエツチ
ング装置を用いて、エツチング室内の一方の電極上に前
記試料を配置し、ＣＣ４ＦｇエツチングガスにＡｕガス
を導入すると共に、各電極間に高周波電圧全印加する。Next, as shown in FIG. 1 (bl), using a reactive ion etching apparatus, for example, a magtron type reactive ion etching apparatus, the sample was placed on one electrode in the etching chamber, and CC4Fg etching was performed. Au gas is introduced into the gas, and a high frequency voltage is fully applied between each electrode.
この時の６膜のエツチング速度は第２表に示す様に、Ｃ
Ｃ／、Ｆ、にＡｒを添加することによ、９、Ａｕ膜のエ
ツチング速度全低下させることができる。さらに本構造
の場合は下地膜としてＴｉ ２膜を用いるため、さらに
０２を添加してＴｉのエツチング速Ｉｎ低下させる。The etching rates of the six films at this time are as shown in Table 2.
By adding Ar to C/, F, the etching rate of the 9.Au film can be completely reduced. Furthermore, in the case of this structure, since a Ti 2 film is used as the base film, 02 is further added to reduce the etching rate In of Ti.
このようなＣＣｌ５Ｆ諺＋Ａ ｒ十Ｏｇ エツチング
ガス勿用いることによシ、第１図１ｂ）に示すように、
Ａｕ４’ｔマスクにしてＰｔ膜３を選択的にエツチング
することができる。By using no etching gas, as shown in FIG. 1b),
The Pt film 3 can be selectively etched using the Au4't mask.
さらに第１図（Ｃ１のようにＴｉ膜（２１’ｔ Ａ ｕ
膜（４）＋Ｐｔ膜（３）ヲマスクにして１反応性イオン
エツチングする。ここで、Ｐｔ−Ｔｉ’ｉ連続でエツチ
ング室去してもかまわない。Furthermore, as shown in Figure 1 (C1), a Ti film (21't A u
One reactive ion etching is performed using the film (4)+Pt film (3) as a mask. Here, Pt-Ti'i may be removed from the etching chamber in succession.
＝５−
第 ２ 表
〔発明の効果〕
以上説明したように本発明音用いれは、Ａｕ膜をマスク
に用いてＰｔ膜をエツチングする場合。=5- Table 2 [Effects of the Invention] As explained above, the present invention is used when etching a Pt film using an Au film as a mask.
Ａｕ膜がほとんどエツチングされないため、Ｐｔの再付
着によるツノのようになってしまうことがない。さらに
、Ａｕ をあらかじめ厚く形成する必要もなくなるため
コスト、加工精度に於いても効果がめる。Since the Au film is hardly etched, it does not become horn-like due to re-deposition of Pt. Furthermore, since there is no need to form thick Au in advance, costs and processing accuracy can be improved.
第１図（ａｌ〜（（Ｊは本発明の一実施例を示す製造工
程の断面図、第２図ｔａ＋〜（Ｃ１は従来の製造工程の
断面図である。
１・・・・・・基板％２・・・・・・Ｔｉ膜、３・・・
・・・Ｐｔ膜、４・・・・・・Ａｕ膜、５・・・・・・
Ｐｔ再付着によ）発生したジノ”。
享７１！１FIG. 1(al~((J is a sectional view of the manufacturing process showing one embodiment of the present invention, FIG. 2 ta+~(C1 is a sectional view of the conventional manufacturing process. 1...Substrate %2...Ti film, 3...
...Pt film, 4...Au film, 5...
"Gino caused by Pt re-deposition".Kyo 71!1
Claims (3)
ンを用いて選択的にエッチングするドライマッチング方
法に於いて、前記マッチングガスとして、塩素ガスを主
成分として用いたことを特徴とするドライマッチング方
法。(1) A dry matching method in which a Pt layer is selectively etched using an Au mask pattern formed on the layer, characterized in that chlorine gas is used as the main component as the matching gas. Dry matching method.
Ｃｌ＿４、ＳｉＣｌ＿４、ＣＣｌ＿２Ｆ＿２およびＣＣ
ｌＦ＿３のうち少なくとも１種からなるものであること
を特徴とする特許請求の範囲第１項記載のドライマッチ
ング方法。(2) The gas mainly composed of chlorine-based gas is Cl_2,
Cl_4, SiCl_4, CCl_2F_2 and CC
The dry matching method according to claim 1, characterized in that the dry matching method comprises at least one type of IF_3.
Ｎ＿２およびＯ＿２のうち少なくとも１種をさらに添加
ガスとして混合したものであることを特徴とする特許請
求の範囲第２項記載のドライエッチング方法。(3) The gas mainly composed of chlorine gas includes Ar, He,
3. The dry etching method according to claim 2, wherein at least one of N_2 and O_2 is further mixed as an additive gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23267585A JPS6292323A (en) | 1985-10-17 | 1985-10-17 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23267585A JPS6292323A (en) | 1985-10-17 | 1985-10-17 | Dry etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6292323A true JPS6292323A (en) | 1987-04-27 |
Family
ID=16943029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23267585A Pending JPS6292323A (en) | 1985-10-17 | 1985-10-17 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6292323A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0284734A (en) * | 1987-10-27 | 1990-03-26 | Nec Corp | Manufacture of semiconductor device |
| JPH07130712A (en) * | 1993-11-02 | 1995-05-19 | Nec Corp | Method for etching pt-based alloy |
| US5426331A (en) * | 1993-03-19 | 1995-06-20 | Nec Corporation | Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system |
| US5618754A (en) * | 1994-12-22 | 1997-04-08 | Nec Corporation | Method of fabricating a semiconductor device having an Au electrode |
| EP0795896A2 (en) * | 1996-03-15 | 1997-09-17 | ROHM Co., Ltd. | Dry etching method |
| US5679213A (en) * | 1993-11-08 | 1997-10-21 | Fujitsu Limited | Method for patterning a metal film |
| US5840200A (en) * | 1996-01-26 | 1998-11-24 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
| US5976394A (en) * | 1996-04-17 | 1999-11-02 | Samsung Electronics Co., Ltd. | Method for dry-etching a platinum thin film |
-
1985
- 1985-10-17 JP JP23267585A patent/JPS6292323A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0284734A (en) * | 1987-10-27 | 1990-03-26 | Nec Corp | Manufacture of semiconductor device |
| US5426331A (en) * | 1993-03-19 | 1995-06-20 | Nec Corporation | Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system |
| JPH07130712A (en) * | 1993-11-02 | 1995-05-19 | Nec Corp | Method for etching pt-based alloy |
| US5679213A (en) * | 1993-11-08 | 1997-10-21 | Fujitsu Limited | Method for patterning a metal film |
| US5618754A (en) * | 1994-12-22 | 1997-04-08 | Nec Corporation | Method of fabricating a semiconductor device having an Au electrode |
| US5840200A (en) * | 1996-01-26 | 1998-11-24 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
| EP0795896A2 (en) * | 1996-03-15 | 1997-09-17 | ROHM Co., Ltd. | Dry etching method |
| EP0795896A3 (en) * | 1996-03-15 | 1999-06-02 | ROHM Co., Ltd. | Dry etching method |
| US5976394A (en) * | 1996-04-17 | 1999-11-02 | Samsung Electronics Co., Ltd. | Method for dry-etching a platinum thin film |
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