JPS628600A - Heat radiation plate for semiconductor device - Google Patents
Heat radiation plate for semiconductor deviceInfo
- Publication number
- JPS628600A JPS628600A JP14777185A JP14777185A JPS628600A JP S628600 A JPS628600 A JP S628600A JP 14777185 A JP14777185 A JP 14777185A JP 14777185 A JP14777185 A JP 14777185A JP S628600 A JPS628600 A JP S628600A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- semiconductor device
- heat radiation
- heat
- radiation plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 ［発明の技術的分野］ 本発明は半導体装置用放熱板に関するものである。[Detailed description of the invention] [Technical field of invention] The present invention relates to a heat sink for semiconductor devices.
［発明の技術的背景とその問題点］
従来、半導体レーザ、高周波用ダイオード、インバット
ダイオード、ガンダイオード等の発熱性半導体素子は、
ダイヤモンド又は銅製の放熱板を介して基板上に設置さ
れていた。[Technical background of the invention and its problems] Conventionally, heat generating semiconductor elements such as semiconductor lasers, high frequency diodes, invat diodes, Gunn diodes, etc.
It was installed on the substrate via a diamond or copper heat sink.
しかしながら、ダイヤモンドは高価であって、かつ加工
が困難であるという問題を有し、又、銅を用いたものは
放熱効果が低いという問題を有していた。However, diamond has the problem of being expensive and difficult to process, and those using copper have a problem of low heat dissipation effect.
［発明の目的］
本発明は前記事情に鑑みて成されたものであり、低価で
あってかつ放熱効果の優れた放熱板を提供することを目
的とするものである。[Object of the Invention] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat dissipation plate that is inexpensive and has an excellent heat dissipation effect.
［発明の概要
前記目的を達成するために本発明は、発熱性半導体素子
と基板との間に介挿される放熱板であって、隣化硼素を
主成分として構成されていることを特徴とするものであ
る。[Summary of the Invention To achieve the above object, the present invention provides a heat sink inserted between a heat-generating semiconductor element and a substrate, which is characterized by being composed mainly of boron chloride. It is something.
［発明の実施例］ −以下実施例により本発明を具体的に説明する。[Embodiments of the invention] - The present invention will be specifically explained below with reference to Examples.
第１図は放熱板を用いた半導体装置の斜視図である。同
図において１は金属製（例えば銅（Ｃｕ）製）の基板で
あり、３は半導体レーザ等の発熱性・半導体素子であり
、両者間には硝化８Ｍ素（Ｐａ）を主体とする放熱板２
が介挿されて設置されている。ここで、基板１の縦横幅
Ｊ１１は例えば２ｍｍであり、その高ざｈｌは例えば１
ｍｍであり、放熱板２の短辺幅Ｊ！２は例えば５００μ
ｍであり、長辺幅１３は例えば１０００μｍであり、そ
の高ざｈ２は例えば１００μｍである。又、半導体素子
３の短辺幅Ｊ４は例えば２５０μｍであり、その高さは
例えば１５０μｍである。FIG. 1 is a perspective view of a semiconductor device using a heat sink. In the figure, 1 is a metal substrate (for example, made of copper (Cu)), 3 is a heat generating/semiconductor element such as a semiconductor laser, and between them is a heat sink mainly made of 8M nitride (Pa). 2
is inserted and installed. Here, the vertical and horizontal widths J11 of the substrate 1 are, for example, 2 mm, and the height hl is, for example, 1
mm, and the width of the short side of the heat sink 2 is J! 2 is for example 500μ
m, the long side width 13 is, for example, 1000 μm, and the height h2 is, for example, 100 μm. Further, the short side width J4 of the semiconductor element 3 is, for example, 250 μm, and the height thereof is, for example, 150 μm.
次に第２図を参照して前記放熱板２の構造の一例を説明
する。この放熱板２は、例えば９９０×４９０μｍの縦
横幅を有する燐化ａ素（ＢＰ）部材２Ａの表面に例えば
５０ＯＡ厚のチタニウム（Ｔ ｉ ＞部材２Ｂを被覆し
、その上に例えば１０００Ａ厚の白金（Ｐｔ）部材２Ｃ
を被覆し、これを１μｍ厚の銀（Ａｕ）で被覆して成る
。Next, an example of the structure of the heat sink 2 will be explained with reference to FIG. This heat dissipation plate 2 is made by coating the surface of a phosphoric acid (BP) member 2A having a vertical and horizontal width of, for example, 990×490 μm with, for example, 50 OA thick titanium (T i > member 2B), and covering it with, for example, 1000 Å thick platinum. (Pt) Member 2C
This is coated with silver (Au) with a thickness of 1 μm.
このような放熱板を用いれば、低＃Ｊ！８化が達成でき
かつ放熱効果の向上を図ることができる。If you use such a heat sink, you can achieve low #J! 8 can be achieved and the heat dissipation effect can be improved.
［発明の効果コ 以上詳述したような本発明によれば、低価格化。[Effects of invention According to the present invention as detailed above, the cost can be reduced.
放熱効果の向上に寄与する放熱板を提供することができ
、特に発熱性半導体素子を用いた半導体装置に極めて有
効でおる。It is possible to provide a heat dissipation plate that contributes to improving the heat dissipation effect, and it is particularly effective for semiconductor devices using heat generating semiconductor elements.
第１図は本発明の放熱板を用いた半導体装置の一例を示
す斜視図、第２図は本発明の放熱板の一例を示す横断面
図である。
１・・・基板、２・・・放熱板、２Ａ・・・隣化硼素、
１３”
ス
２Ｄ
・２ＣFIG. 1 is a perspective view showing an example of a semiconductor device using the heat sink of the present invention, and FIG. 2 is a cross-sectional view showing an example of the heat sink of the present invention. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Heat sink, 2A... Boron nitride,
13” 2D/2C
Claims (2)
板であって、隣化硼素を主成分として構成されているこ
とを特徴とする半導体装置用放熱板。(1) A heat sink for a semiconductor device, which is a heat sink inserted between a heat-generating semiconductor element and a substrate, and is comprised of boron chloride as a main component.
覆されていることを特徴とする特許請求の範囲第１項に
記載の半導体装置用放熱板。(2) The heat sink for a semiconductor device according to claim 1, wherein the boron nitride is coated with a material such as titanium, platinum, or silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14777185A JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14777185A JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS628600A true JPS628600A (en) | 1987-01-16 |
| JPH0680909B2 JPH0680909B2 (en) | 1994-10-12 |
Family
ID=15437808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14777185A Expired - Lifetime JPH0680909B2 (en) | 1985-07-04 | 1985-07-04 | Heat sink for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0680909B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243563A (en) * | 1988-03-25 | 1989-09-28 | Agency Of Ind Science & Technol | Heat-dissipating substrate composed of boron-based compound semiconductor; its manufacture; boron-based compound semiconductor element |
| US7919855B2 (en) * | 2006-02-21 | 2011-04-05 | Lockheed Martin | Topside thermal management of semiconductor devices using boron phosphide contacting a gate terminal |
| US20180095404A1 (en) * | 2016-10-05 | 2018-04-05 | Konica Minolta, Inc. | Electrophotographic photoconductor and image forming apparatus |
-
1985
- 1985-07-04 JP JP14777185A patent/JPH0680909B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243563A (en) * | 1988-03-25 | 1989-09-28 | Agency Of Ind Science & Technol | Heat-dissipating substrate composed of boron-based compound semiconductor; its manufacture; boron-based compound semiconductor element |
| US7919855B2 (en) * | 2006-02-21 | 2011-04-05 | Lockheed Martin | Topside thermal management of semiconductor devices using boron phosphide contacting a gate terminal |
| US20180095404A1 (en) * | 2016-10-05 | 2018-04-05 | Konica Minolta, Inc. | Electrophotographic photoconductor and image forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0680909B2 (en) | 1994-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4096547A (en) | Heat transfer mounting device for metallic printed circuit boards | |
| US5130888A (en) | Spring clip fastener for surface mounting of printed circuit board components | |
| KR920003485A (en) | Power semiconductor device | |
| EP1195813A3 (en) | Semiconductor device, semiconductor module and hard disk | |
| JPS628600A (en) | Heat radiation plate for semiconductor device | |
| US5285463A (en) | Semiconductor device | |
| KR880002417A (en) | Aluminum Nitride (AIN) Circuit Board | |
| JPH03195053A (en) | Inverter device | |
| JP2853288B2 (en) | Semiconductor device | |
| EP0201954B1 (en) | Semiconductor device comprising a heat sink | |
| JP2005129675A (en) | Semiconductor device | |
| CN211127752U (en) | Quartz crystal resonator | |
| JPH05191071A (en) | Mounting structure of heat releasing component | |
| JPS62115796A (en) | Construction of electrode of heat sink for optical semiconductor | |
| JPS5946086A (en) | Printed circuit board and method of producing same | |
| JPS63140556A (en) | Semiconductor device | |
| JPS6329561A (en) | Electronic device with cooling means | |
| JPH0562048U (en) | Power element fixing structure | |
| JP2912076B2 (en) | Semiconductor device | |
| JP2776366B2 (en) | Electronic component cooling structure | |
| JPH08204370A (en) | Mounting structure of heating component and wiring board on radiator | |
| JPS62123798A (en) | Complex printed wiring substrate | |
| JPS6298800A (en) | Hybrid integrated circuit device | |
| JPS62243399A (en) | Printed board supporter | |
| JPS59149639U (en) | Transistor holding device |