JPS6271915U - - Google Patents
Info
- Publication number
- JPS6271915U JPS6271915U JP16156985U JP16156985U JPS6271915U JP S6271915 U JPS6271915 U JP S6271915U JP 16156985 U JP16156985 U JP 16156985U JP 16156985 U JP16156985 U JP 16156985U JP S6271915 U JPS6271915 U JP S6271915U
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- semiconductor amplifier
- microwave semiconductor
- radio wave
- hybrid coupler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 5
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Description
第1図は、この考案の一実施例によるマイクロ
波半導体増幅器の構成を示す図、第2図は、受動
回路素子から成る負荷の具体例を示す図、第3図
は従来のバランス形構成のマイクロ波半導体増幅
器の構成を示す図、第4図は、従来のバランス形
構成のマイクロ波半導体増幅器とアンテナを接続
した場合の構成図である。
3はマイクロ波半導体増幅器、5は3dBハイ
ブリツド結合器、6は整合終端、7は出力端子、
9は受動回路素子から成る負荷である。なお、図
中、同一符号は同一又は相当部分を示す。
FIG. 1 is a diagram showing the configuration of a microwave semiconductor amplifier according to an embodiment of the invention, FIG. 2 is a diagram showing a specific example of a load consisting of passive circuit elements, and FIG. 3 is a diagram showing a conventional balanced configuration. FIG. 4, a diagram showing the configuration of a microwave semiconductor amplifier, is a configuration diagram when a conventional balanced microwave semiconductor amplifier and an antenna are connected. 3 is a microwave semiconductor amplifier, 5 is a 3 dB hybrid coupler, 6 is a matching termination, 7 is an output terminal,
9 is a load consisting of passive circuit elements. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
第1の端子より、マイクロ波半導体増幅器の出力
電波を入射し、上記3dBハイブリツド結合器の
第1の端子から入射した電波が伝搬しない第2の
端子には上記マイクロ波半導体増幅器の出力イン
ピーダンスに等しいインピーダンスを有する受動
回路素子から成る負荷を接続し、上記3dBハイ
ブリツド結合器の第1の端子から入射した電波の
1/2の電力が現われる第3の端子には整合終端
を接続し、残りの第4の端子を上記マイクロ波半
導体増幅器の出力端子としたことを特徴とするマ
イクロ波半導体増幅器。 The output radio wave of the microwave semiconductor amplifier is input to the first terminal of the four terminals of the 3 dB hybrid coupler, and the radio wave input from the first terminal of the 3 dB hybrid coupler does not propagate to the second terminal. A load consisting of a passive circuit element having an impedance equal to the output impedance of the microwave semiconductor amplifier is connected to the third terminal of the 3 dB hybrid coupler where 1/2 of the power of the radio wave incident from the first terminal appears. A microwave semiconductor amplifier characterized in that a matched termination is connected and the remaining fourth terminal is used as an output terminal of the microwave semiconductor amplifier.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16156985U JPS6271915U (en) | 1985-10-21 | 1985-10-21 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16156985U JPS6271915U (en) | 1985-10-21 | 1985-10-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6271915U true JPS6271915U (en) | 1987-05-08 |
Family
ID=31088000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16156985U Pending JPS6271915U (en) | 1985-10-21 | 1985-10-21 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6271915U (en) |
-
1985
- 1985-10-21 JP JP16156985U patent/JPS6271915U/ja active Pending
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