JPS6260271A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS6260271A JPS6260271A JP60200745A JP20074585A JPS6260271A JP S6260271 A JPS6260271 A JP S6260271A JP 60200745 A JP60200745 A JP 60200745A JP 20074585 A JP20074585 A JP 20074585A JP S6260271 A JPS6260271 A JP S6260271A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- layer
- semiconductor layer
- type amorphous
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は非晶質半導体を用いた光起電力装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photovoltaic device using an amorphous semiconductor.
ところで従来のこの種光起電力装置は第３図に示す如く
構成されている。第３図は従来における光起電力装置を
示す断面構造図であり、ガラス等の透光性絶縁基板１上
にＳｎＯ２＋Ｉｎ２Ｏ３・ＳｎＯ２等を材料とする透明
電極２、ｐ型非晶質半導体層３、ｊ型非晶質半導体層４
、ｎ型非晶質半導体層５をこの順序で積層形成する一方
、更にこの上にＡＡ’等を材料とする裏面電極６を積層
形成して構成されており、透光性絶縁基板１、透明電極
２を通して各ｐ、ｔ、ｎ型の半導体Ｍ３．４．５内に光
を導入し、これらの各半導体層３，４．５内で生起せし
められた光起電力を透明電極２及び裏面電極６を通じて
外部に取り出すようになっている。By the way, a conventional photovoltaic device of this type is constructed as shown in FIG. FIG. 3 is a cross-sectional structural diagram showing a conventional photovoltaic device, in which a transparent electrode 2 made of SnO2+In2O3, SnO2, etc. is placed on a transparent insulating substrate 1 such as glass, a p-type amorphous semiconductor layer 3, J-type amorphous semiconductor layer 4
, an n-type amorphous semiconductor layer 5 are laminated in this order, and a back electrode 6 made of AA' or the like is further laminated thereon. Light is introduced into each p-, t-, and n-type semiconductor M3.4.5 through the electrode 2, and the photovoltaic force generated in each of these semiconductor layers 3, 4.5 is transferred to the transparent electrode 2 and the back electrode. It is designed to be taken out to the outside through 6.
ところで、このような光起電力装置に光を入射させた場
合、光起電力特性が急速に低下する、所謂光劣化が生ず
ることが知ら−れている。これはｎ型部晶質半導体ＪＷ
５中の添加不純物たるＰがｎ型非晶質半導体層４中に拡
散することによるものであり、このためＰの拡散防止手
段が種々試みられているが、まだ十分な効果が得られて
いないのが現状である。By the way, it is known that when light is incident on such a photovoltaic device, so-called photodeterioration occurs, in which the photovoltaic characteristics rapidly deteriorate. This is an n-type crystalline semiconductor JW
This is because P, which is an added impurity in 5, diffuses into the n-type amorphous semiconductor layer 4. For this reason, various methods for preventing P diffusion have been attempted, but no sufficient effect has been obtained yet. is the current situation.
第４図は上記光起電力装置におけるｐ、ｉ、ｎ型非晶質
半導体層３，４．５のマイクロイオンアナライダによる
分析結果を示すグラフであり、横軸にｐ型非晶質半導体
層表面側からの深さを、また縦軸にＰｆｉ度（対数、任
意目盛）をとって示してあり、このグラフから明らかな
ように、ｎ型半導体層５中の添加不純物であるＰがｌ型
半導体層内に深く拡散していることが解る。第５図は横
軸にＰＨ３／ＳｉＨ４の比を、また縦軸に光劣化率（初
期特性／光照射後の特性）をとって示してあり、このグ
ラフから明らかなように、例えばオーミック接合性を高
める等のためにＰＨ３／ＳｉＨ４の比率を大きくしてゆ
くとこれに従って劣化が大きくなることが解る。FIG. 4 is a graph showing the analysis results of the p-, i-, and n-type amorphous semiconductor layers 3 and 4.5 in the photovoltaic device using a micro ion analyzer, and the horizontal axis indicates the p-type amorphous semiconductor layer. The depth from the surface side is shown, and the vertical axis shows the degree of Pfi (logarithm, arbitrary scale).As is clear from this graph, P, which is an added impurity in the n-type semiconductor layer 5, is l-type. It can be seen that it is deeply diffused within the semiconductor layer. Figure 5 shows the ratio of PH3/SiH4 on the horizontal axis and the photodegradation rate (initial characteristics/characteristics after light irradiation) on the vertical axis. It can be seen that as the ratio of PH3/SiH4 is increased in order to increase the PH3/SiH4 ratio, the deterioration increases accordingly.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは非晶質シリコンカーバイド、 Ｓｎ
Ｏ２．Ｉｎ２Ｏ３・ＳｎＯ２又は微結晶シリコン等にて
構成したブロッキング層を用いることによって容易に、
しかも確実にＰの拡散を防止し、劣化を抑制し得るよう
にした光起電力装置を提供するにある。The present invention has been made in view of the above circumstances, and its object is to produce amorphous silicon carbide, Sn
O2. By using a blocking layer made of In2O3/SnO2 or microcrystalline silicon, it is easy to
Moreover, it is an object of the present invention to provide a photovoltaic device that can reliably prevent diffusion of P and suppress deterioration.
本発明に係る光起電力装置は透光性絶縁基板上にｐ型、
ｉ型、ｎ型の各非晶質半導体層を積層形成した光起電力
装置において、前記ｎ型非晶質半導体層とｎ型非晶質半
導体層との間に１０〜１００人の厚さに不純物の拡散防
止のためのブロッキング層を介装せしめたことを特徴と
する。The photovoltaic device according to the present invention has p-type,
In a photovoltaic device in which i-type and n-type amorphous semiconductor layers are laminated, a thickness of 10 to 100 layers is provided between the n-type amorphous semiconductor layer and the n-type amorphous semiconductor layer. It is characterized by interposing a blocking layer to prevent diffusion of impurities.
以下本発明をその実施例を示す図面に基づき具体的に説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は本発明に係る光起電力装置（以下本発明装置と
いう）の断面構造図であり、図中１はガラス等の透光性
絶縁基板、２はＳｎＯ２ 、 Ｉｎ２Ｏ３・ＳｎＯ２等
を材料とする透明電極、３． ４． ５は各ｐ型。FIG. 1 is a cross-sectional structural diagram of a photovoltaic device according to the present invention (hereinafter referred to as the device of the present invention). transparent electrode; 3. 4. 5 is each p type.
ｉ型、ｎ型の非晶質半導体層、６はＡ１等を材料とする
裏面電極を示している。そしてｌ型非晶質半導体層４と
ｎ型非晶質半導体層５との間に非晶質シリコンカーバイ
ド等のブロッキング層７が１０〜１００人の厚さに介在
せしめられている。I-type and n-type amorphous semiconductor layers, and 6 indicate a back electrode made of A1 or the like. A blocking layer 7 made of amorphous silicon carbide or the like is interposed between the l-type amorphous semiconductor layer 4 and the n-type amorphous semiconductor layer 5 to a thickness of 10 to 100 layers.
ブロッキング層の厚さを１０〜１００人としたのは１０
Å以下でばＰに対するブロッキング効果が十分でなく、
また１００Å以上では発生キャリヤのトンネル効果によ
る流れが阻害され、特性の変化を招くからである。The thickness of the blocking layer was set to 10 to 100 people.
If it is less than Å, the blocking effect against P is not sufficient,
Further, if the thickness is 100 Å or more, the flow of generated carriers due to the tunnel effect is inhibited, leading to changes in characteristics.
なお、ブロッキング層７の材料としては非晶質シリコン
カーバイドに限らず、ＳｎＯ２＋Ｉｎ２Ｏ３・ＳｎＯ２
゜或いは微結晶シリコン等であってもよい。Note that the material for the blocking layer 7 is not limited to amorphous silicon carbide, but also SnO2+In2O3/SnO2
Alternatively, microcrystalline silicon or the like may be used.
次に上記した各ブロッキング層７の形成条件の一例を示
す。Next, an example of the conditions for forming each of the blocking layers 7 described above will be shown.
】）非晶質シリコンカーバイドの場合
原料ガス： ＳｉＨ４＋ ＣＨ４（又はＣ２１１２＋
Ｃ２Ｈ６等）基板温度：１５０〜３００℃
ＲＦパワー＝１０〜２００Ｗ
ガス圧カニ ０．１〜Ｉ Ｔｏｒｒ
２ ） ＳｎＯ２ 、 Ｉｎ２Ｏ１・ＳｎＯ２の場合エ
レクトロビーム法、スパック法（ＴＣＯターゲット）或
いは熱ＣＶＯ法に依る。]) For amorphous silicon carbide, raw material gas: SiH4+ CH4 (or C2112+
C2H6, etc.) Substrate temperature: 150-300℃ RF power = 10-200W Gas pressure 0.1-I Torr 2) In the case of SnO2, In2O1/SnO2, it depends on the electro beam method, spackle method (TCO target) or thermal CVO method .
３）微結晶シリコンの場合
成長ガス： ＳｉＨ４＋Ｈ２等
基板温度：１５０〜３００℃
ＲＦパワー：１００〜３００Ｗ
ガス圧カニ ０．１〜Ｉ Ｔｏｒｒ
第２図は上述の如く構成した本発明装置におけるｎ型非
晶質半導体層５中の添加不純物であるＰＯｉ型非晶質半
導体層４への拡散状態を示すマイクロイオンアナライザ
の分析結果を示すグラフであり、横軸にはｐ型非晶質半
導体層の表面側からの深さを、また縦軸にＰ濃度（対数
、任意単位）をとって示しである。3) For microcrystalline silicon Growth gas: SiH4 + H2 etc. Substrate temperature: 150-300°C RF power: 100-300W Gas pressure 0.1-I Torr This is a graph showing the analysis results of a micro ion analyzer showing the state of diffusion of added impurities in the crystalline semiconductor layer 5 into the POi-type amorphous semiconductor layer 4, and the horizontal axis shows the surface of the p-type amorphous semiconductor layer. The depth from the side is shown, and the vertical axis shows the P concentration (logarithm, arbitrary unit).
このグラフから明らかなように破線で示す従来の拡散態
様に比較して１型非晶質半導体層４中でのＰの濃度は格
段に低減されており、ブロッキング層７によるＰの拡散
阻止効果が大きいことが解る−
〔効果〕
以上の如く本発明装置にあっては、ｎ型非晶質半導体層
中の添加不純物であるＰ等がｉ非晶質半導体層中に拡散
するのを確実に阻止することができて光劣化を抑制出来
、光起電力特性の低下を防止出来て品質の向上が図れる
など本発明は優れた効果を奏するものである。As is clear from this graph, the concentration of P in the type 1 amorphous semiconductor layer 4 is significantly reduced compared to the conventional diffusion mode shown by the broken line, and the blocking layer 7 has an effect of inhibiting P diffusion. It can be seen that the effect is large. [Effect] As described above, in the device of the present invention, diffusion of P, etc., which is an added impurity in the n-type amorphous semiconductor layer, into the i-amorphous semiconductor layer can be reliably prevented. The present invention has excellent effects such as being able to suppress photodeterioration and preventing deterioration of photovoltaic properties and improving quality.
第１図は本発明装置の断面構造図、第２図はｐ。
ｉ、ｎ型非晶質半導体層中のＰの濃度を示すグラフ、第
３図は従来装置の断面構造図、第４図は従来装置のｐ、
ｉ、ｎ型非晶質半導体層中のＰの濃度を示すグラフ、第
５図は光劣化とＰとの関係を示すグラフである。
Ｉ・・・透光性絶縁基板 ２・・・透明電極 ３・
・・ｐ型非晶質半導体層 ４・・・ｊ型非晶質半導体
層５・・・ｎ型非晶質半導体層 ６・・・裏面電極７
・・・ブロッキング層
特 許 出願人 三洋電機株式会社
代理人 弁理士 河 野 登 夫
梯 １ 図
俤 ２目
答 ３ 図
蕃 ４ 回FIG. 1 is a cross-sectional structural diagram of the device of the present invention, and FIG. 2 is p. A graph showing the concentration of P in the i, n-type amorphous semiconductor layer, FIG. 3 is a cross-sectional structural diagram of the conventional device, and FIG. 4 is the p,
FIG. 5 is a graph showing the concentration of P in the i, n-type amorphous semiconductor layer, and FIG. 5 is a graph showing the relationship between photodegradation and P. I...Transparent insulating substrate 2...Transparent electrode 3.
...p-type amorphous semiconductor layer 4...j-type amorphous semiconductor layer 5...n-type amorphous semiconductor layer 6...back electrode 7
...Blocking layer patent Applicant Sanyo Electric Co., Ltd. Agent Patent attorney Noboru Kawano 1 Illustration 2 Answers 3 Illustrations 4 times
Claims (1)
導体層を積層形成した光起電力装置において、前記ｉ型
非晶質半導体層とｎ型非晶質半導体層との間に１０〜１
００Åの厚さに不純物の拡散防止のためブロッキング層
を介装せしめたことを特徴とする光起電力装置。 ２、前記ブロッキング層はアモルファスシリコンカーバ
イド層である特許請求の範囲第１項記載の光起電力装置
。 ３、前記ブロッキング層はＳｎＯ＿２層、Ｉｎ＿２Ｏ＿
３・ＳｎＯ＿２層である特許請求の範囲第１項記載の光
起電力装置。 ４、前記ブロッキング層は微結晶シリコン層である特許
請求の範囲第１項記載の光起電力装置。[Scope of Claims] 1. In a photovoltaic device in which p-type, i-type, and n-type amorphous semiconductor layers are stacked on a transparent insulating substrate, the i-type amorphous semiconductor layer and the n-type amorphous semiconductor layer are stacked. 10 to 1 between type amorphous semiconductor layer
1. A photovoltaic device characterized by interposing a blocking layer with a thickness of 0.00 Å to prevent diffusion of impurities. 2. The photovoltaic device according to claim 1, wherein the blocking layer is an amorphous silicon carbide layer. 3. The blocking layer is SnO_2 layer, In_2O_
3. The photovoltaic device according to claim 1, which is a SnO_2 layer. 4. The photovoltaic device according to claim 1, wherein the blocking layer is a microcrystalline silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200745A JPS6260271A (en) | 1985-09-10 | 1985-09-10 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200745A JPS6260271A (en) | 1985-09-10 | 1985-09-10 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6260271A true JPS6260271A (en) | 1987-03-16 |
Family
ID=16429463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60200745A Pending JPS6260271A (en) | 1985-09-10 | 1985-09-10 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6260271A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274184A (en) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | Photoelectric transducer and manufacture thereof |
| JPH0352271A (en) * | 1989-07-20 | 1991-03-06 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH03106079A (en) * | 1989-09-20 | 1991-05-02 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH08116073A (en) * | 1994-10-17 | 1996-05-07 | Hitachi Cable Ltd | Compound semiconductor wafer and semiconductor device |
| US5897332A (en) * | 1995-09-28 | 1999-04-27 | Canon Kabushiki Kaisha | Method for manufacturing photoelectric conversion element |
| JPH11186587A (en) * | 1997-12-18 | 1999-07-09 | Sanyo Electric Co Ltd | Photodetecting element |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5743477A (en) * | 1980-04-24 | 1982-03-11 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS59972A (en) * | 1982-04-12 | 1984-01-06 | シエブロン・リサ−チ・コンパニ− | Compensating amorphous solar battery associated with insulating layer |
| JPS5955081A (en) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | Photoelectric conversion semiconductor device |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
-
1985
- 1985-09-10 JP JP60200745A patent/JPS6260271A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55108780A (en) * | 1979-02-14 | 1980-08-21 | Sharp Corp | Thin film solar cell |
| JPS5743477A (en) * | 1980-04-24 | 1982-03-11 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS59972A (en) * | 1982-04-12 | 1984-01-06 | シエブロン・リサ−チ・コンパニ− | Compensating amorphous solar battery associated with insulating layer |
| JPS5955081A (en) * | 1982-09-22 | 1984-03-29 | Fuji Electric Corp Res & Dev Ltd | Photoelectric conversion semiconductor device |
| JPS6050973A (en) * | 1983-08-31 | 1985-03-22 | Agency Of Ind Science & Technol | Semiconductor device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63274184A (en) * | 1987-05-06 | 1988-11-11 | Hitachi Ltd | Photoelectric transducer and manufacture thereof |
| JPH0352271A (en) * | 1989-07-20 | 1991-03-06 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH03106079A (en) * | 1989-09-20 | 1991-05-02 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPH08116073A (en) * | 1994-10-17 | 1996-05-07 | Hitachi Cable Ltd | Compound semiconductor wafer and semiconductor device |
| US5897332A (en) * | 1995-09-28 | 1999-04-27 | Canon Kabushiki Kaisha | Method for manufacturing photoelectric conversion element |
| JPH11186587A (en) * | 1997-12-18 | 1999-07-09 | Sanyo Electric Co Ltd | Photodetecting element |
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