JPS6252028B2 - - Google Patents
Info
- Publication number
- JPS6252028B2 JPS6252028B2 JP7692784A JP7692784A JPS6252028B2 JP S6252028 B2 JPS6252028 B2 JP S6252028B2 JP 7692784 A JP7692784 A JP 7692784A JP 7692784 A JP7692784 A JP 7692784A JP S6252028 B2 JPS6252028 B2 JP S6252028B2
- Authority
- JP
- Japan
- Prior art keywords
- wear
- film
- substrate
- silicon
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0084—Producing gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electronic Switches (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は耐摩耗膜に関するものであり、耐摩耗
性を必要とする金属や磁器あるいはプラスチツク
などからなる基体の表面に形成される耐摩耗性の
皮膜を提供するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a wear-resistant film, which is a wear-resistant film formed on the surface of a substrate made of metal, porcelain, plastic, etc. that requires wear resistance. It provides:
従来例の構成とその問題点
従来から金属や磁器、プラスチツクやその他の
材料の基体の耐摩耗膜材料としては酸化タンタル
や炭化珪素あるいは窒化珪素などが用いられてい
る。しかし、酸化タンタルは硬度が低く、耐摩耗
性の面で劣る。また、炭化珪素は硬度が高く耐摩
耗性に優れるが、金属との接着力が弱く、高温で
は化学的に不安定であり耐摩耗性が劣化する。一
方、窒化珪素は硬度が高く、化学的にも安定であ
るが、内部応力が大きくクラツクを生じやすい欠
点があつた。Conventional Structure and Problems Tantalum oxide, silicon carbide, silicon nitride, and the like have been used as wear-resistant film materials for substrates made of metal, porcelain, plastic, and other materials. However, tantalum oxide has low hardness and poor wear resistance. Furthermore, although silicon carbide has high hardness and excellent wear resistance, it has weak adhesive strength with metals, is chemically unstable at high temperatures, and wear resistance deteriorates. On the other hand, although silicon nitride has high hardness and is chemically stable, it has the drawback of high internal stress and a tendency to cause cracks.
発明の目的
本発明は、このような従来の欠点を除去するも
ので十分な耐摩耗性と化学安定性および耐クラツ
ク性を有し、かつ基体に強固に付着する耐摩耗膜
を提供するものである。Purpose of the Invention The present invention provides an abrasion-resistant film that eliminates these conventional drawbacks, has sufficient abrasion resistance, chemical stability, and crack resistance, and adheres firmly to a substrate. be.
発明の構成
本発明の耐摩耗膜は基体表面に形成された窒化
珪素と炭化珪素と酸化珪素とよりなる耐摩耗膜で
あつて、前記膜の表面から基板側へ向かつて窒化
珪素の組成比率が減少しており、前記基板側から
前記膜の表面に向かつて酸化珪素の比率が減少し
ており、前記膜の表面側および基板側に向かつて
炭化珪素の組成比率が減少していることを特徴と
する耐摩耗膜である。Structure of the Invention The wear-resistant film of the present invention is a wear-resistant film formed on the surface of a substrate and made of silicon nitride, silicon carbide, and silicon oxide, and the composition ratio of silicon nitride increases from the surface of the film toward the substrate. The composition ratio of silicon oxide decreases from the substrate side toward the surface of the film, and the composition ratio of silicon carbide decreases from the surface side of the film and toward the substrate side. It is a wear-resistant film.
実施例の説明
第１図に本発明における耐摩耗膜の基本的な構
造を示す。１は、金属、磁器あるいはプラスチツ
クなどからなる摩耗を防止すべき基体である。
２，３，４は、酸化珪素、炭化珪素および窒化珪
素からなる耐摩耗膜で、２は、耐摩耗性は劣るが
基体と強固に接着する酸化珪素を主成分とする接
着層、３は、化学的には不安定であるが硬度が高
く内部応力の小さい炭化珪素を主成分とする耐摩
耗層、４は、内部応力が大きいが、硬度が高く化
学的に安定である窒化珪素を主成分とする耐摩耗
膜である。Description of Examples FIG. 1 shows the basic structure of the wear-resistant film in the present invention. 1 is a base body made of metal, porcelain, plastic, etc., which should be prevented from wear.
2, 3, and 4 are abrasion-resistant films made of silicon oxide, silicon carbide, and silicon nitride; 2 is an adhesive layer mainly composed of silicon oxide, which has poor abrasion resistance but firmly adheres to the substrate; 3, A wear-resistant layer whose main component is silicon carbide, which is chemically unstable but has high hardness and low internal stress, and 4 is a wear-resistant layer whose main component is silicon nitride, which has high internal stress but is high hardness and chemically stable. It is a wear-resistant film.
酸化珪素、炭化珪素および窒素の厚み方向の組
成分布を、それぞれ第２図の曲線５，６，７に示
す。酸化珪素は、基体１から耐摩耗層３へ向かつ
て膜厚が増加するに従つて減少し、逆に炭化珪素
が増加する。さらに、炭化珪素は、耐摩耗層４に
向かつて膜厚が増加するに従つて減少し、窒化珪
素が増加する。なお、濃度分布は連続的に変化し
ても段階的に変化してもよい。 The compositional distributions of silicon oxide, silicon carbide, and nitrogen in the thickness direction are shown by curves 5, 6, and 7 in FIG. 2, respectively. Silicon oxide decreases as the film thickness increases from substrate 1 to wear-resistant layer 3, while silicon carbide increases. Further, as the film thickness increases toward wear-resistant layer 4, silicon carbide decreases, and silicon nitride increases. Note that the concentration distribution may change continuously or in steps.
以下、本発明のさらに具体的な実施例を説明す
る。 More specific examples of the present invention will be described below.
高周波スパツタリング法により、炭化珪素のタ
ーゲツトをアルゴンと酸素および窒素の混合ガス
中で蒸発させるいわゆる反応性スパツタリングに
より、酸化珪素と炭化珪素および窒化珪素の混合
物を基板上に形成した。まず、スパツタリングの
雰囲気を５×10-2Torrのアルゴンと酸素の混合
ガス（比率１：２）とし、酸化珪素と炭化珪素の
混合物を基体表面に着膜し、徐々に酸素ガスの分
圧を減少させ、アルゴンガスのみとし、さらに窒
素ガスを徐々に加え、炭化珪素と窒化珪素の混合
物を着膜し、最終的にはアルゴンと窒素の分圧を
１：２とし、窒化珪素の比率を高めた。これによ
り、基体上に良好な耐摩耗膜が形成でき、例えば
基体物質としてアルミナを用いるとその摩耗量は
1/10以下に減少する。 A mixture of silicon oxide, silicon carbide, and silicon nitride was formed on a substrate by so-called reactive sputtering in which a silicon carbide target is evaporated in a mixed gas of argon, oxygen, and nitrogen using a high-frequency sputtering method. First, the sputtering atmosphere is set to a mixed gas of argon and oxygen (ratio 1:2) at 5×10 -2 Torr, a mixture of silicon oxide and silicon carbide is deposited on the surface of the substrate, and the partial pressure of oxygen gas is gradually increased. Then, gradually add nitrogen gas, deposit a mixture of silicon carbide and silicon nitride, and finally set the partial pressure of argon and nitrogen to 1:2 to increase the ratio of silicon nitride. Ta. As a result, a good wear-resistant film can be formed on the substrate. For example, when alumina is used as the substrate material, the amount of wear is reduced.
It decreases to less than 1/10.
なお、上記実施例においてスパツタリング中の
酸素分圧あるいは窒素分圧を時間的に変化させる
ことにより、酸化珪素、炭化珪素および窒化珪素
の濃度分布を容易に制御できる。基体物質として
はアルミナ以外の磁器、金属、プラスチツクなど
でも良く、着膜法としては、反応性スパツタリン
グ法以外でも可能である。 In the above embodiments, by temporally changing the oxygen partial pressure or nitrogen partial pressure during sputtering, the concentration distribution of silicon oxide, silicon carbide, and silicon nitride can be easily controlled. The base material may be porcelain other than alumina, metal, plastic, etc., and the film deposition method may be other than reactive sputtering.
発明の効果
上記の実施例から明らかなように、本発明の耐
摩耗膜により、金属、磁器、プラスチツクなどの
基体の耐摩耗性を向上させることができる。特
に、本発明の耐摩耗膜は、基体に強固に接着し、
また化学的にも安定であり、耐クラツク性にも優
れるため、例えば、サーマルヘツドの耐摩耗膜と
して有効であり、その他、耐摩耗性を必要とする
精密機械部品の製造などその実用範囲はきわめて
広い。Effects of the Invention As is clear from the above examples, the wear-resistant film of the present invention can improve the wear resistance of substrates such as metal, porcelain, and plastic. In particular, the wear-resistant film of the present invention firmly adheres to the substrate,
It is also chemically stable and has excellent crack resistance, so it is effective as a wear-resistant film for thermal heads, and has a wide range of practical applications, such as manufacturing precision mechanical parts that require wear resistance. wide.
第１図は本発明の耐摩耗膜の基本的な構造を示
す断面図、第２図はその組成の変化の状態を示す
図である。
１……基体、２……接着層、３，４……耐摩耗
層、５……酸化珪素、６……炭化珪素、７……窒
化珪素。
FIG. 1 is a sectional view showing the basic structure of the wear-resistant film of the present invention, and FIG. 2 is a diagram showing changes in its composition. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Adhesive layer, 3, 4...Wear-resistant layer, 5...Silicon oxide, 6...Silicon carbide, 7...Silicon nitride.
Claims (1)
酸化珪素とよりなる耐摩耗膜であつて、前記膜の
表面から基板側へ向かつて窒化珪素の組成比率が
減少しており、前記基板側から前記膜の表面に向
かつて酸化珪素の組成比率が減少しており、前記
膜の表面側および基板側に向かつて炭化珪素の組
成比率が減少していることを特徴とする耐摩耗
膜。1 A wear-resistant film made of silicon nitride, silicon carbide, and silicon oxide formed on the surface of a substrate, in which the composition ratio of silicon nitride decreases from the surface of the film toward the substrate side, and the composition ratio of silicon nitride decreases from the surface of the film toward the substrate side. A wear-resistant film characterized in that the composition ratio of silicon oxide decreases toward the surface of the film, and the composition ratio of silicon carbide decreases toward the surface side of the film and the substrate side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7692784A JPS60221562A (en) | 1984-04-17 | 1984-04-17 | Wear-resistant film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7692784A JPS60221562A (en) | 1984-04-17 | 1984-04-17 | Wear-resistant film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60221562A JPS60221562A (en) | 1985-11-06 |
| JPS6252028B2 true JPS6252028B2 (en) | 1987-11-02 |
Family
ID=13619349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7692784A Granted JPS60221562A (en) | 1984-04-17 | 1984-04-17 | Wear-resistant film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60221562A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400101A (en) * | 2010-09-09 | 2012-04-04 | 鸿富锦精密工业（深圳）有限公司 | Film coated piece and preparation method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0254754A (en) * | 1988-08-19 | 1990-02-23 | Agency Of Ind Science & Technol | Formation of film having controlled gradient composition |
| EP1251188B1 (en) * | 1999-10-13 | 2008-01-09 | AGC Ceramics Co., Ltd. | Sputtering target and method for preparing the same and film-forming method |
| KR101287694B1 (en) * | 2012-02-16 | 2013-08-07 | 신크론 컴퍼니 리미티드 | Translucent hard thin film |
-
1984
- 1984-04-17 JP JP7692784A patent/JPS60221562A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102400101A (en) * | 2010-09-09 | 2012-04-04 | 鸿富锦精密工业（深圳）有限公司 | Film coated piece and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60221562A (en) | 1985-11-06 |
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