JPS6244973Y2 - - Google Patents
Info
- Publication number
- JPS6244973Y2 JPS6244973Y2 JP1982071207U JP7120782U JPS6244973Y2 JP S6244973 Y2 JPS6244973 Y2 JP S6244973Y2 JP 1982071207 U JP1982071207 U JP 1982071207U JP 7120782 U JP7120782 U JP 7120782U JP S6244973 Y2 JPS6244973 Y2 JP S6244973Y2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen gas
- metal hydride
- valve
- adsorption
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 56
- 229910052987 metal hydride Inorganic materials 0.000 claims description 27
- 150000004681 metal hydrides Chemical class 0.000 claims description 27
- 238000001179 sorption measurement Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 14
- 238000000746 purification Methods 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 239000003463 adsorbent Substances 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
Description
【考案の詳細な説明】
この考案は、水素ガス精製装置に関し、詳しく
は吸着剤を充填した複数個の吸着筒と、金属水素
化物を充填した金属水素化物容器とを連結してな
ることを特徴とする、高純度の水素ガスの供給が
可能な、水素ガス精製装置に関する。[Detailed description of the invention] This invention relates to a hydrogen gas purification device, and more specifically, the invention is characterized by connecting a plurality of adsorption cylinders filled with an adsorbent and a metal hydride container filled with a metal hydride. The present invention relates to a hydrogen gas purification device capable of supplying high-purity hydrogen gas.
近年、高純度の水素ガスは、半導体工業、金属
工業等の分野においてその需要が大きく増加して
いる。これらの分野で使用される水素ガスの多く
は99.9999％以上の高純度のものが要求される。
現在、このような高純度の水素ガスを得る方法と
しては、パラジウム等の薄膜を透過させる方法が
用いられている。この方法ではPd単体では水素
透過のサイクルの繰り返しによる薄膜の変形が著
しいため、Pd−Ag−Au−Ru合金等が用いられ
ているが、これらの合金は高価であり、またその
膜成形が困難であるため複雑な工程を経て製造し
なければならない。更にPd合金膜を透過させる
ためには300℃程度の温度が必要となるため、水
素ガスを予熱器を用いて加熱しなければならず、
さらにPd合金膜透過後の水素を冷却器で冷却し
なければならない。またここで得られる水素の圧
力は通常４Kg／m2以下で、高い圧力の水素ガスを
得ることはできない。この方法に対して近年、金
属水素化物を使用する水素ガス精製装置が提案さ
れているが、これは金属水素化物が温度を変化さ
せることにより、可逆的に水素吸収・放出を行う
こと、更に水素以外の不純物ガスを金属中にとり
こみ、水素ガスだけを可逆的に放出する性質に着
目してなされたものである。しかしながら、この
方法では原料水素ガス中の不純物量が多い場合に
は、金属水素化物への不純物ガスの蓄積がはなは
だしく、合金の劣化が顕著におこるために、水素
ガスの精製能力が短期間のうちに低下し、高温度
条件下の再生操作をひんぱんに行う必要がある。 In recent years, demand for high-purity hydrogen gas has increased significantly in fields such as the semiconductor industry and the metal industry. Most of the hydrogen gas used in these fields requires high purity of 99.9999% or higher.
Currently, as a method of obtaining such high-purity hydrogen gas, a method of permeating the hydrogen gas through a thin film of palladium or the like is used. In this method, Pd alone causes significant deformation of the thin film due to repeated cycles of hydrogen permeation, so Pd-Ag-Au-Ru alloys are used, but these alloys are expensive and it is difficult to form the film. Therefore, it must be manufactured through a complicated process. Furthermore, since a temperature of approximately 300°C is required for permeation through the Pd alloy membrane, the hydrogen gas must be heated using a preheater.
Furthermore, the hydrogen that has passed through the Pd alloy membrane must be cooled down using a cooler. Further, the pressure of hydrogen obtained here is usually 4 kg/m 2 or less, and high pressure hydrogen gas cannot be obtained. In response to this method, hydrogen gas purification equipment using metal hydrides has been proposed in recent years, but this method requires that the metal hydrides absorb and release hydrogen reversibly by changing the temperature. This was developed by focusing on the property of incorporating other impurity gases into the metal and reversibly releasing only hydrogen gas. However, with this method, when the amount of impurities in the raw material hydrogen gas is large, the impurity gas accumulates in the metal hydride and the alloy deteriorates significantly, so the ability to purify hydrogen gas is reduced in a short period of time. It is necessary to perform regeneration operations under high temperature conditions frequently.
この考案は上記の欠点を解決するためになされ
たものである。すなわち、この考案は水素ガスを
導入するための導入管、これと開閉弁を介して連
設する複数個の、上記水素ガス中の不純物ガスを
吸着するための吸着筒、これと開閉弁を介して連
設する熱交換器を備えた金属水素化物容器を備
え、さらに吸着筒出口に不純物ガスの検知器をか
つ吸着筒出入口には電磁弁をそれぞれ設置し、検
知器と電磁弁とを連動させたことを特徴とする水
素ガス精製装置を提供するものである。 This invention was made to solve the above-mentioned drawbacks. In other words, this invention includes an introduction pipe for introducing hydrogen gas, a plurality of adsorption cylinders for adsorbing impurity gases in the hydrogen gas, which are connected via an introduction pipe and an on-off valve, and an adsorption cylinder for adsorbing impurity gases in the hydrogen gas. A metal hydride container is equipped with a heat exchanger connected in series, and an impurity gas detector is installed at the outlet of the adsorption cylinder, and a solenoid valve is installed at the entrance and exit of the adsorption cylinder, and the detector and the solenoid valve are linked. The present invention provides a hydrogen gas purification device characterized by the following.
この考案を、一実施例を用いて説明する。図１
はこの考案の水素ガス精製装置構成の一実施例の
図である。１は低純度の水素ガスの導入口、２は
開閉弁、３は低純度の水素ガスを導入するための
導入管を示す。４，５，１７，１８は電磁弁で、
不純物ガス検知器１４，１５及び制御器１６と連
動している。６，７は水素ガス中の不純物ガスを
吸着するための吸着筒で、それぞれに吸着剤８，
９が充填されており、また排気管１０，１１を有
して開閉弁１２，１３を介して排気系と連結され
ている。２０は金属水素化物容器で、金属水素化
物２１が充填されており、また熱交換器２２を有
している。この金属水素化物容器２０は開閉弁１
９、電磁弁１７，１８を介して吸着筒６，７の出
口側と連結しており、また開閉弁２４を介して高
純度の水素ガスを放出するための放出管２３へと
つながつている。更に開閉弁２５，２６を介して
吸着筒入口側に連結されている。 This idea will be explained using one example. Figure 1
1 is a diagram of an embodiment of the configuration of a hydrogen gas purification apparatus of this invention. Reference numeral 1 indicates an inlet for introducing low-purity hydrogen gas, 2 indicates an on-off valve, and 3 indicates an introduction pipe for introducing low-purity hydrogen gas. 4, 5, 17, 18 are solenoid valves,
It is interlocked with impurity gas detectors 14 and 15 and a controller 16. 6 and 7 are adsorption cylinders for adsorbing impurity gas in hydrogen gas, and adsorbents 8 and 7 are respectively attached to them.
9, and has exhaust pipes 10 and 11 and is connected to an exhaust system via on-off valves 12 and 13. A metal hydride container 20 is filled with a metal hydride 21 and has a heat exchanger 22. This metal hydride container 20 has an on-off valve 1
9. It is connected to the outlet sides of the adsorption cylinders 6 and 7 via electromagnetic valves 17 and 18, and is also connected to a discharge pipe 23 for discharging high-purity hydrogen gas via an on-off valve 24. Furthermore, it is connected to the inlet side of the adsorption cylinder via on-off valves 25 and 26.
この考案の水素ガス精製装置の作動方法は次の
通りである。低純度水素ガス（純度約99.9％）を
開閉弁２及び電磁弁４を開けて、吸着筒６を透過
させ、更に開閉弁１９を開いて金属水素化物容器
２０に導入する。吸着筒６には吸着剤８、例えば
合成ゼオライト（モレキユラシーブ）が充填され
ており、低純度水素ガス中のH2O、CO、CO2等
の不純物ガスを吸着する。このため金属水素化物
容器２０には純度99.99％以上の水素ガスが導入
され、金属水素化物容器２０内の金属水素化物２
１例えばLaNi5合金の水素化物に吸収させる。こ
の時、熱交換器２２には冷却水を通し、水素吸収
に伴い発生する熱を除去し、水素吸収を円滑にさ
せる。吸収筒出口には、不純物ガス検知器１４、
例えば露点計を設置し、吸着剤８の吸着能力が低
下し、水素ガス中の不純物濃度（水分濃度など）
が大きくなつた場合には制御器１６を通して電磁
弁４，１７を閉じると共に、電磁弁５，１８を開
け水素ガスを吸着筒７を通して金属水素化物容器
２０に導入する。水素ガスが吸着筒７を通過中に
吸着筒６では開閉弁１２を開いて排気管１０を通
して排気操作を行い、吸着剤８中の不純物ガスの
脱ガスをして再生を行う。このような操作を繰り
返して金属水素化物２１に水素を吸収させてい
き、金属水素化物容器内が一定の圧力以上、すな
わち金属水素化物の吸収平衡水素圧力以上になる
と、開閉弁２，１９を閉じ、次に開閉弁２５，２
６をすばやく開閉させて、金属水素化物容器内の
空間部分及び導管部分の水素ガスを、吸着筒の入
口側に戻す。 The method of operating the hydrogen gas purification device of this invention is as follows. Low-purity hydrogen gas (about 99.9% purity) is introduced into the metal hydride container 20 by opening the on-off valve 2 and electromagnetic valve 4 to allow it to permeate through the adsorption column 6, and then opening the on-off valve 19. The adsorption column 6 is filled with an adsorbent 8, such as synthetic zeolite (molecular sieve), which adsorbs impurity gases such as H 2 O, CO, and CO 2 in low-purity hydrogen gas. For this reason, hydrogen gas with a purity of 99.99% or more is introduced into the metal hydride container 20, and the metal hydride 2 in the metal hydride container 20 is
1. For example, it is absorbed in a hydride of LaNi 5 alloy. At this time, cooling water is passed through the heat exchanger 22 to remove heat generated due to hydrogen absorption, thereby smoothing the hydrogen absorption. At the outlet of the absorption cylinder, an impurity gas detector 14,
For example, if a dew point meter is installed, the adsorption capacity of the adsorbent 8 will decrease, and the impurity concentration (water concentration, etc.) in the hydrogen gas will decrease.
When the hydrogen gas becomes large, the solenoid valves 4 and 17 are closed through the controller 16, and the solenoid valves 5 and 18 are opened to introduce hydrogen gas into the metal hydride container 20 through the adsorption cylinder 7. While the hydrogen gas is passing through the adsorption column 7, the on-off valve 12 is opened in the adsorption column 6 to perform an exhaust operation through the exhaust pipe 10, thereby degassing the impurity gas in the adsorbent 8 and performing regeneration. By repeating these operations, the metal hydride 21 absorbs hydrogen, and when the pressure inside the metal hydride container reaches a certain level or higher, that is, the absorption equilibrium hydrogen pressure of the metal hydride or higher, the on-off valves 2 and 19 are closed. , then on-off valve 25,2
6 is quickly opened and closed to return the hydrogen gas in the space inside the metal hydride container and the conduit to the inlet side of the adsorption column.
その後、熱交換器２２に温水を流し、金属水素
化物２１を加熱し、発生した水素ガスを開閉弁２
４を開けて高純度ガス放出管２３から放出する。
金属水素化物としてLaNi5水素化物を用いた場
合、水素ガスの純度は99.9999％以上のものが得
られる。また金属水素化物の温度を70℃に設定す
ることにより10Kg／cm2の水素圧力を得ることがで
きる。 After that, hot water is poured into the heat exchanger 22 to heat the metal hydride 21, and the generated hydrogen gas is passed through the on-off valve 2.
4 and discharge from the high purity gas discharge pipe 23.
When LaNi 5 hydride is used as the metal hydride, hydrogen gas with a purity of 99.9999% or higher can be obtained. Furthermore, by setting the temperature of the metal hydride at 70°C, a hydrogen pressure of 10 Kg/cm 2 can be obtained.
またこの考案の装置を２個以上組み合わせるこ
とにより、連続的に高純度の水素を供給すること
が可能となる。 Furthermore, by combining two or more devices of this invention, it becomes possible to continuously supply high-purity hydrogen.
このように、この考案の水素ガス精製装置では
低温で高純度の水素ガスを得ることができ、また
熱交換器の熱媒の温度を設定することにより、所
望の圧力の水素ガスを得ることができる。また吸
着剤と金属水素化物を組み合わせて使用してお
り、しかも吸着剤を常にフレツシユな状態で使用
しているため、金属水素化物容器へ導入される水
素ガスの純度が比較的高くなり、原料水素ガスと
して純度99.9％程度の水素ガスを用いても、金属
水素化物の劣化は非常にわずかで、再生操作は著
しく軽減される。 In this way, the hydrogen gas purification device of this invention can obtain highly pure hydrogen gas at low temperatures, and by setting the temperature of the heat medium in the heat exchanger, it is possible to obtain hydrogen gas at a desired pressure. can. In addition, since we use a combination of adsorbent and metal hydride, and the adsorbent is always used in a fresh state, the purity of the hydrogen gas introduced into the metal hydride container is relatively high, and the raw material hydrogen Even when hydrogen gas with a purity of about 99.9% is used as the gas, the metal hydride deteriorates only slightly and the regeneration operation is significantly reduced.
以上のように、この考案は、99.9999％以上の
高純度で、しかも圧力の高い水素ガスを、低温の
操作で、安定して供給することが可能な優れた水
素ガス精製装置を提供する。 As described above, this invention provides an excellent hydrogen gas purification device that can stably supply hydrogen gas with a high purity of 99.9999% or higher and high pressure by operating at a low temperature.
図１はこの考案の水素ガス精製装置の構成説明
図である。
３：水素ガス導入管、６，７：吸着筒、４，
５，１７，１８：電磁弁、１４，１５：不純ガス
の検知器、１６：制御器、２０：金属水素化物容
器、２２：熱交換器。
FIG. 1 is an explanatory diagram of the configuration of the hydrogen gas purification apparatus of this invention. 3: Hydrogen gas introduction pipe, 6, 7: Adsorption column, 4,
5, 17, 18: Solenoid valve, 14, 15: Impure gas detector, 16: Controller, 20: Metal hydride container, 22: Heat exchanger.
Claims (1)
閉弁を介して連設する複数個の、上記水素ガス
中の不純物ガスを吸着するための吸着筒、これ
と開閉弁を介して連設する熱交換器を備えた金
属水素化物容器を備え、さらに吸着筒出口に不
純物ガスの検知器をかつ吸着筒出入口には電磁
弁をそれぞれ設置し、検知器と電磁弁とを連動
させたことを特徴とする水素ガス精製装置。 ２ 吸着筒と金属水素化物容器を各々複数個有し
てなる実用新案登録請求の範囲第１項記載の水
素ガス精製装置。[Claims for Utility Model Registration] 1. An introduction pipe for introducing hydrogen gas, a plurality of adsorption cylinders connected to this through an on-off valve for adsorbing impurity gases in the hydrogen gas, and Equipped with a metal hydride container equipped with a heat exchanger connected via an on-off valve, an impurity gas detector is installed at the outlet of the adsorption cylinder, and a solenoid valve is installed at the entrance and exit of the adsorption cylinder. A hydrogen gas purification device characterized by being linked with. 2. The hydrogen gas purification apparatus according to claim 1, which comprises a plurality of adsorption cylinders and a plurality of metal hydride containers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120782U JPS58172432U (en) | 1982-05-14 | 1982-05-14 | Hydrogen gas purification equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120782U JPS58172432U (en) | 1982-05-14 | 1982-05-14 | Hydrogen gas purification equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58172432U JPS58172432U (en) | 1983-11-17 |
| JPS6244973Y2 true JPS6244973Y2 (en) | 1987-11-30 |
Family
ID=30080836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7120782U Granted JPS58172432U (en) | 1982-05-14 | 1982-05-14 | Hydrogen gas purification equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58172432U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131367A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Quantitatively conveying type damper device |
-
1982
- 1982-05-14 JP JP7120782U patent/JPS58172432U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131367A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Quantitatively conveying type damper device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58172432U (en) | 1983-11-17 |
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