JPS6242544Y2 - - Google Patents
Info
- Publication number
- JPS6242544Y2 JPS6242544Y2 JP15144181U JP15144181U JPS6242544Y2 JP S6242544 Y2 JPS6242544 Y2 JP S6242544Y2 JP 15144181 U JP15144181 U JP 15144181U JP 15144181 U JP15144181 U JP 15144181U JP S6242544 Y2 JPS6242544 Y2 JP S6242544Y2
- Authority
- JP
- Japan
- Prior art keywords
- tapered
- bolt
- bolts
- pedestal
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000007246 mechanism Effects 0.000 claims description 21
- 238000001816 cooling Methods 0.000 claims description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Rectifiers (AREA)
Description
【考案の詳細な説明】
本考案は平形半導体用の高電圧サイリスタスタ
ツクに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high voltage thyristor stack for flat semiconductor applications.
まず、第１図、第２図について従来例を説明
し、よつて本考案の目的を明らかにする。 First, a conventional example will be explained with reference to FIGS. 1 and 2, thereby clarifying the purpose of the present invention.
第１図は従来例を示す平面図、第２図は同上縦
断側面図で、左右に配設した２個の枠体８，８′
とこの枠体８，８′相互を連結するボルト１，
１′とで門形機構２を形成し、該門形機構２の内
部に冷却体３と平形半導体素子４とを交互に複数
個重ね合せて収納し、その一端に板バネ５を挿入
してこの板バネ５の弾性力で規定圧力を加え、上
記ボルト１，１′で締め付けるものである。 Fig. 1 is a plan view showing a conventional example, and Fig. 2 is a longitudinal sectional side view of the same, showing two frames 8, 8' arranged on the left and right.
and the bolts 1, which connect the frames 8, 8',
1' to form a portal mechanism 2, a plurality of cooling bodies 3 and flat semiconductor elements 4 are housed in the portal mechanism 2, stacked alternately, and a leaf spring 5 is inserted into one end. A specified pressure is applied using the elastic force of the leaf spring 5, and the bolts 1 and 1' are tightened.
ボルト１，１′は表面を絶縁パイプ１ａで覆い
各冷却体３の一部を貫通させる。 The surfaces of the bolts 1 and 1' are covered with insulating pipes 1a and penetrate through a portion of each cooling body 3.
門形機構２と板バネ５は同電位であり、各冷却
体３の電位は順次高くなり、最端の冷却体３ｎの
端部には碍子９を挿入して絶縁している。 The portal mechanism 2 and the leaf spring 5 have the same potential, and the potential of each cooling body 3 increases in sequence, and an insulator 9 is inserted into the end of the outermost cooling body 3n for insulation.
また、図中６は冷却体３の両端に距離を置いて
配設される絶縁板で、この絶縁板６の端部上下は
遮蔽板７で覆う。図中１０は導体を示す。 Further, in the figure, reference numeral 6 denotes an insulating plate disposed at a distance from both ends of the cooling body 3, and the upper and lower ends of this insulating plate 6 are covered with shielding plates 7. In the figure, 10 indicates a conductor.
このような構成において、電圧印加時は冷却体
３のボルト１，１′の貫通部にはそれぞれ門形機
構２との間に平形半導体素子４の電圧分担の電位
差が生じ、碍子９に最も近い冷却体３ｎでは全素
子の電圧が印加され、従つて高耐圧の平形半導体
スタツクになるにつれ、ボルト１，１′を覆う絶
縁パイプ１ａの表面に電界が集中する。 In such a configuration, when a voltage is applied, a potential difference corresponding to the voltage sharing of the flat semiconductor element 4 is generated between the portal mechanism 2 and the penetration portion of the bolts 1 and 1' of the cooling body 3, and the voltage shared by the flat semiconductor element 4 is In the cooling body 3n, voltages are applied to all elements, and as the flat semiconductor stack has a high breakdown voltage, the electric field concentrates on the surface of the insulating pipe 1a covering the bolts 1 and 1'.
その結果、沿面に放電を発し長期にわたつて絶
縁を維持することが困難となる。 As a result, discharge occurs along the creeping surface, making it difficult to maintain insulation over a long period of time.
かかる欠点を防止するため、絶縁パイプ１ａの
表面に非線形性の高抵抗塗料を塗布し電界の集中
を緩和することにより、沿面放電の発生をある程
度抑制することも可能である。 In order to prevent such drawbacks, it is possible to suppress the occurrence of creeping discharge to some extent by applying a nonlinear high-resistance paint to the surface of the insulating pipe 1a to alleviate the concentration of electric field.
しかしこの方法では絶縁部の導電処理、部分放
電防止処理などの作業が必要であり、処理工程数
及び工作時間が増加し、また絶縁部の管理も面倒
であり、価格的にも高価なものになつてしまう。 However, this method requires work such as conductive treatment of the insulation part and partial discharge prevention treatment, which increases the number of processing steps and work time, and also makes it troublesome to manage the insulation part, making it expensive. I get used to it.
一方、門形機構２を構成するボルト１，１′を
冷却体３を貫通させずにその上下におき、両者の
空間的距離をとることにより絶縁することも考え
られるが、この構成ではスタツクの高さ寸法が冷
却体３のほぼ倍近くになつてしまい、変換装置内
に組込むのに大きなスペースを必要とし、収納盤
等が大型化し保守性の低下や装置価格の上昇を招
くという欠点と冷却体３の配設時の位置決めも困
難であるという欠点がある。 On the other hand, it is also possible to insulate the bolts 1 and 1' that make up the portal mechanism 2 by placing them above and below the cooling body 3 without passing through them, and by keeping a spatial distance between them, but in this configuration, the stack The height dimension is almost twice that of the cooling body 3, and a large space is required to incorporate it into the conversion device, and the storage panel etc. becomes large, leading to a decrease in maintainability and an increase in the cost of the device. There is also a drawback that positioning the body 3 when disposing it is difficult.
本考案の目的は上記第１図、第２図での従来例
の不都合を解消し、全体を大形化することなく簡
単な構造で良好な絶縁性を発揮でき、また組立が
容易でしかも半導体素子締付荷重に十分な強度を
確実に得られる高電圧サイリスタスタツクを提供
することにある。 The purpose of this invention is to eliminate the disadvantages of the conventional examples shown in Figs. It is an object of the present invention to provide a high voltage thyristor stack that can reliably obtain sufficient strength to withstand the element clamping load.
しかしてこの目的は、左右に配設した２個の枠
体とこの枠体相互を連結するFRP製のボルトで
門形機構を形成し、該FRP製のボルトを貫通さ
せてボルト両端近くに２個の台座を設け、これら
FRP製のボルトと台座との結合は、台座には一
方の口がすぼまるテーパー状貫通孔を形成し、ま
たボルトには外周にテーパー凹部を設け、この凹
部にテーパーカツプリングを嵌めて外径がテーパ
ー状に突出するテーパー凸部を形成し、該テーパ
ー凸部をそのすぼまり端から順次前記テーパー状
貫通孔内にこの貫通孔のすぼまり方向に向い嵌入
することによるくさび機構で固定し、両台座相互
間に該ボルトが貫通する冷却体と平形半導体素子
とを複数個重ね合せたもの及び締付機構とを並べ
て挿入したことにより達成される。 However, the purpose of the lever is to form a gate-shaped mechanism with two frames placed on the left and right and FRP bolts that connect these frames, and to pass through the FRP bolts and insert two near both ends of the bolts. Each pedestal is provided, and these
The FRP bolt and the pedestal are connected by forming a tapered through hole in the pedestal with one mouth converging, and by providing a tapered recess on the outer periphery of the bolt, and fitting a taper coupling ring into this recess. A wedge mechanism in which a tapered convex portion with a tapered diameter is formed, and the tapered convex portion is sequentially fitted into the tapered through hole from the narrowing end thereof facing in the narrowing direction of the through hole. This is achieved by inserting a cooling body through which the bolt passes through the two pedestals, a plurality of stacked flat semiconductor elements, and a tightening mechanism in parallel.
以下、図面について本考案の実施例を詳細に説
明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第３図は本考案のサイリスタスタツクの平面
図、第４図は同上縦断側面図で、左右に配設した
２個の枠体８，８′とこの枠体８，８′相互をスタ
ツド部となるFRP製のボルト１１，１１′で連結
して門形機構２を形成する。この門形機構２内で
上記ボルト１１，１１′を貫通させてボルト１
１，１１′の両端近くに台座１２，１２′を取付け
る。 Fig. 3 is a plan view of the thyristor stack of the present invention, and Fig. 4 is a longitudinal sectional side view of the same. The gate-shaped mechanism 2 is formed by connecting them with FRP bolts 11 and 11'. The bolt 1 is passed through the bolts 11 and 11' within this portal mechanism 2.
Mount pedestals 12, 12' near both ends of 1, 11'.
台座１２，１２′のボルト挿通用の貫通孔１２
ａは第７図〜９図に示すように一方の口がすぼま
るテーパー状孔として形成し、また第１０図に示
すようにFRP製のボルト１１，１１′の外周面の
一部に前記テーパー状貫通孔１２ａとすぼまる方
向を同じくしてテーパー凹部１１ａを形成する。 Through hole 12 for bolt insertion of pedestal 12, 12'
A is formed as a tapered hole with one mouth converging as shown in FIGS. 7 to 9, and as shown in FIG. A tapered recess 11a is formed so as to narrow in the same direction as the tapered through hole 12a.
そして、該テーパー凹部１１ａに第１１図に示
すような中空円錐台形状の筒体によるテーパー状
カツプリングを締結材１３として嵌着してこれが
ボルト１１，１１′の他の外周面より突出してテ
ーパー凹部１３ｃを形成するようにした。 Then, a tapered coupling ring made of a hollow truncated cone-shaped cylinder as shown in FIG. 11 is fitted into the tapered recess 11a as a fastening member 13, and this protrudes from the other outer circumferential surfaces of the bolts 11, 11' to form the tapered recess. 13c was formed.
このようにして、ボルト１１，１１′で締結材
１３を介して形成されたテーパー凹部１３ｃの部
分を台座１２，１２′のテーパー状貫通孔１２ａ
に嵌入することにより、第５図、第６図に示すよ
うに台座１２，１２′とボルト１１，１１′とはい
わゆるくさび機構で固定するようにした。 In this way, the portion of the tapered recess 13c formed through the fastening material 13 by the bolts 11, 11' is connected to the tapered through hole 12a of the pedestal 12, 12'.
As shown in FIGS. 5 and 6, the bases 12, 12' and the bolts 11, 11' are fixed by a so-called wedge mechanism.
なお、締結材１３は第１２図に示すように軸方
向に半割り分割された分割体１３ａ，１３ｂの集
合で筒体を形成するものであり、材質としては黄
銅を用いる。そして、台座１２，１２′の貫通孔
１２ａとボルト１１，１１′のテーパー凹部１１
ａの位置を離して台座１２，１２′にボルト１
１，１１′を貫通させておき、この状態でテーパ
ー凹部１１ａに外側から分割体１３ａ，１３ｂを
合せるようにして締結材１３を取付け、そのまま
台座１２，１２′をずらして、この締結材１３に
よるテーパー凸部１３ａがそのすぼまり端から台
座１２，１２′の貫通孔１２ａ内のすぼまり口へ
と向かつて入り込んでいくことによりくさび結合
ができる。 As shown in FIG. 12, the fastening member 13 forms a cylindrical body by a set of divided bodies 13a and 13b divided in half in the axial direction, and is made of brass. The through holes 12a of the pedestals 12, 12' and the tapered recesses 11 of the bolts 11, 11'
Separate the position a and attach the bolt 1 to the pedestal 12, 12'.
1 and 11' are passed through, and in this state, attach the fastening material 13 by aligning the divided bodies 13a and 13b to the tapered recess 11a from the outside. The tapered convex portion 13a enters from its tapered end toward the tapered opening in the through hole 12a of the bases 12, 12', thereby achieving a wedge connection.
この場合、適度な安全係数を加えた荷重を与え
て結合させる。 In this case, they are connected by applying a load with an appropriate safety factor.
両台座１２，１２′間に、絶縁性のスペーサー
１４、導体１０、冷却体３と平形半導体素子４と
の交互重ね合せ体、導体１０、スペーサー１４及
び締結機構１５を順次並べて挿入する。 An insulating spacer 14, a conductor 10, an alternate stack of a cooling body 3 and a flat semiconductor element 4, a conductor 10, a spacer 14, and a fastening mechanism 15 are inserted in sequence between the pedestals 12 and 12'.
なお、上記冷却体３の端部にはボルト１１，１
１′を貫通させ、また、締結機構１５はボルト１
１，１１′を貫通させた基台１５ａと上記台座１
２′間に皿バネ１５ｂを介在し、かつこの基台１
５ａの中央を貫通し台座１２′に螺合する締付ボ
ルト１５ｃとの集合体で構成するようにした。 Note that bolts 11, 1 are attached to the ends of the cooling body 3.
1', and the fastening mechanism 15
1, 11' and the above-mentioned pedestal 1.
A disc spring 15b is interposed between 2', and this base 1
5a and a tightening bolt 15c which passes through the center and is screwed into the pedestal 12'.
なお、図中６は冷却体３の両端に配設された冷
却用の風胴を形成する絶縁板であり、７は絶縁板
６の端部上下を覆う遮蔽板である。 In the figure, numeral 6 is an insulating plate that forms a cooling wind barrel disposed at both ends of the cooling body 3, and 7 is a shielding plate that covers the upper and lower ends of the insulating plate 6.
以上述べたように本考案の高電圧サイリスタス
タツクは、門形機構を構成するボルトにFRP製
のボルトを用いるので部分放電が発生するおそれ
がなく高い絶縁性を安価に確保することができ
る。また、冷却体と平形半導体素子との重ね合せ
体を挟持する台座は、貫通孔をテーパー状とし、
一方前記FRP製のボルト側にもテーパー凸部を
設けて両者をくさび機構をもつて結合するように
したので、引張り荷重を加えた場合にFRP製ボ
ルトに加わる主な応力は圧縮応力に変換すること
ができ、高荷重に耐えられる機構となるものであ
る。同時にくさびを用いての結合は製造の際の組
立も容易とすることになる。 As described above, the high voltage thyristor stack of the present invention uses FRP bolts for the bolts constituting the portal mechanism, so there is no risk of partial discharge occurring and high insulation can be ensured at low cost. In addition, the pedestal that holds the stacked body of the cooling body and the flat semiconductor element has a tapered through hole.
On the other hand, a tapered convex part is also provided on the FRP bolt side to connect the two with a wedge mechanism, so when a tensile load is applied, the main stress applied to the FRP bolt is converted into compressive stress. It is a mechanism that can withstand high loads. At the same time, coupling using wedges facilitates assembly during manufacturing.
このような効果から本考案のサイリスタスタツ
クは、全体を小形に形成でき、その結果高圧大容
量のサイリスタ変換装置の縮少化に大きく寄与
し、また価格低廉な製品の実現を可能にするもの
である。 Due to these effects, the thyristor stack of the present invention can be made compact as a whole, and as a result, it greatly contributes to the downsizing of high-voltage, large-capacity thyristor conversion devices, and also enables the realization of inexpensive products. It is.
第１図は従来のサイリスタスタツクの平面図、
第２図は同上縦断側面図、第３図は本考案のサイ
リスタスタツクの実施例を示す一部切欠いた平面
図、第４図は同上縦断側面図、第５図はボルトと
台座の結合状態を示す要部の縦断側面図、第６図
は同上側面図、第７図は台座の平面図、第８図は
同上正面図、第９図は同上側面図、第１０図は
FRP製ボルトの１部省略した正面図、第１１図
は締結材の縦断側面図、第１２図は同上正面図で
ある。
１，１′……ボルト、１ａ……絶縁パイプ、２
……門形機構、３……冷却体、４……平形半導体
素子、５……板バネ、６……絶縁板、７……遮蔽
板、８，８′……枠体、９……碍子、１０……導
体、１１，１１′……ボルト、１１ａ……テーパ
ー凹部、１２，１２′……台座、１２ａ……貫通
孔、１３……締付材、１３ａ，１３ｂ……分割
体、１３ｃ……テーパー凹部、１４……スペーサ
ー、１５……締付機構、１５ａ……基台、１５ｂ
……皿バネ、１５ｃ……締付ボルト。
Figure 1 is a plan view of a conventional thyristor stack.
Fig. 2 is a longitudinal side view of the same, Fig. 3 is a partially cutaway plan view showing an embodiment of the thyristor stack of the present invention, Fig. 4 is a longitudinal side view of the same, and Fig. 5 is a state in which the bolt and pedestal are connected. FIG. 6 is a side view of the same, FIG. 7 is a plan view of the pedestal, FIG. 8 is a front view of the same, FIG. 9 is a side view of the same, and FIG. 10 is a side view of the same.
A partially omitted front view of the FRP bolt, FIG. 11 is a longitudinal sectional side view of the fastening material, and FIG. 12 is a front view of the same. 1, 1'... Bolt, 1a... Insulated pipe, 2
...Portal mechanism, 3... Cooling body, 4... Flat semiconductor element, 5... Leaf spring, 6... Insulating plate, 7... Shielding plate, 8, 8'... Frame, 9... Insulator , 10... Conductor, 11, 11'... Bolt, 11a... Tapered recess, 12, 12'... Pedestal, 12a... Through hole, 13... Tightening material, 13a, 13b... Divided body, 13c ...Tapered recess, 14...Spacer, 15...Tightening mechanism, 15a...Base, 15b
...disc spring, 15c...tightening bolt.
Claims (1)
結するFRP製のボルトで門形機構を形成し、該
FRP製のボルトを貫通させてボルト両端近くに
２個の台座を設け、これらFRP製のボルトと台
座との結合は、台座には一方の口がすぼまるテー
パー状貫通孔を形成し、またボルトには外周にテ
ーパー凹部を設け、この凹部にテーパーカツプリ
ングを嵌めて外径がテーパー状に突出するテーパ
ー凸部を形成し、該テーパー凸部をそのすぼまり
端から順次前記テーパー状貫通孔内にこの貫通孔
のすぼまり方向に向い嵌入することによるくさび
機構で固定し、両台座相互間に該ボルトが貫通す
る冷却体と平形半導体素子とを複数個重ね合せた
もの及び締付機構とを並べて挿入したことを特徴
とする高電圧サイリスタスタツク。 A gate-shaped mechanism is formed by two frames placed on the left and right and FRP bolts that connect these frames.
Two pedestals are provided near both ends of the bolt through which an FRP bolt is passed, and the connection between these FRP bolts and the pedestal is such that a tapered through hole is formed in the pedestal with one mouth converging, and A tapered concave portion is provided on the outer periphery of the bolt, and a taper coupling ring is fitted into this concave portion to form a tapered convex portion whose outer diameter protrudes in a tapered shape. A cooling body and a plurality of flat semiconductor elements are stacked together and fixed by a wedge mechanism by fitting into a hole facing the narrowing direction of this through hole, and the bolt passes between both pedestals, and tightening. A high voltage thyristor stack characterized by having two mechanisms inserted side by side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15144181U JPS5856456U (en) | 1981-10-12 | 1981-10-12 | high voltage thyristor stack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15144181U JPS5856456U (en) | 1981-10-12 | 1981-10-12 | high voltage thyristor stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5856456U JPS5856456U (en) | 1983-04-16 |
| JPS6242544Y2 true JPS6242544Y2 (en) | 1987-10-31 |
Family
ID=29944129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15144181U Granted JPS5856456U (en) | 1981-10-12 | 1981-10-12 | high voltage thyristor stack |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856456U (en) |
-
1981
- 1981-10-12 JP JP15144181U patent/JPS5856456U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5856456U (en) | 1983-04-16 |
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