JPS6232664A - Led lamp for both ac and dc - Google Patents
Led lamp for both ac and dcInfo
- Publication number
- JPS6232664A JPS6232664A JP60172921A JP17292185A JPS6232664A JP S6232664 A JPS6232664 A JP S6232664A JP 60172921 A JP60172921 A JP 60172921A JP 17292185 A JP17292185 A JP 17292185A JP S6232664 A JPS6232664 A JP S6232664A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- rectifying means
- substrate
- emitting diodes
- rectifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の利用分野)
この発明は、パイロットランプに用いて好適な小型の交
直両用LEDランプに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a small-sized dual-purpose LED lamp suitable for use as a pilot lamp.
(従来技術)
この発明者は、先の出願で基板上に発光ダイオードチッ
プと共に4個の整流ダイオードチップから成る整流回路
を設置させた、交流電源と直流電源の相方に使用できる
交直両用LEDランプを提案した。このLEDランプの
整流回路は整流ダイオードチップを用いてハイブリット
IC化したもので、チップ状の整流ダイオードを用いる
ために、必ず一定以上の面積を有する基板を要する他1
.L E Dランプの口径の縮少化に限度があると共に
、整流ダイオードの設置及び接続作業に多大なる手間を
要するという欠点があった。(Prior Art) In a previous application, the inventor developed an AC/DC dual-purpose LED lamp that can be used for both AC and DC power sources, in which a rectifier circuit consisting of four rectifier diode chips is installed along with a light emitting diode chip on a substrate. Proposed. The rectifier circuit of this LED lamp is a hybrid IC using a rectifier diode chip, and since it uses a chip-shaped rectifier diode, it always requires a board with a certain area or more.
.. There is a drawback that there is a limit to the reduction in the diameter of the LED lamp, and that it requires a great deal of effort to install and connect the rectifier diodes.
(技術的課題)
この発明の技術的課題は、基板上に整流回路を設けても
その大きさをさらに小型にできると共に、量産化によっ
て大幅なコストダウンを図ることのできるLEDランプ
を提供せんとするにある。(技術的手段)
上述した技術的課題を達成するためにこの発明は、LE
Dランプを、基板上に単数または複数の発光ダイオード
と整流手段を設置させ、その上面を被覆材で覆うと共に
、前記整流手段をモノシリツクIC化させた整流回路素
子で構成したものである。(Technical Problem) The technical problem of the present invention is to provide an LED lamp whose size can be further reduced even if a rectifier circuit is provided on the substrate, and whose cost can be significantly reduced through mass production. There is something to do. (Technical means) In order to achieve the above-mentioned technical problem, this invention
The D lamp is constructed of a rectifier circuit element in which one or more light emitting diodes and a rectifier are installed on a substrate, the upper surface of which is covered with a covering material, and the rectifier is made into a monolithic IC.
(実施例)
図面に依れば、第1図乃至第3図において、反射鏡1を
設けた金属製の筒体2の中央部より下方には、絶縁リン
グ3を介して口金4が取り付けられており、口金4内部
には安定抵抗5が収納されている。反射鏡lの内底部に
は、例えばセラミック製の円盤状を呈した基板6が設置
され、この基板6上には例えば4個の発光ダイオード7
.7・・拳とモノシリツクIC化された整流回路素子か
ら成る整流手段8が設置されると共に、その上面を例え
ばエポキシ樹脂等の被覆材9で覆っである。基板6には
さらに安定抵抗5を介して口金端子10と接続するリー
ド線11a及び口金4と接続するリード線11bが各々
取り付けられている。(Example) According to the drawings, in FIGS. 1 to 3, a base 4 is attached via an insulating ring 3 below the center of a metal cylinder 2 provided with a reflector 1. A stabilizing resistor 5 is housed inside the base 4. A disk-shaped substrate 6 made of ceramic, for example, is installed on the inner bottom of the reflecting mirror l, and on this substrate 6, for example, four light emitting diodes 7 are mounted.
.. 7. A rectifying means 8 consisting of a rectifying circuit element formed into a monolithic IC is installed, and its upper surface is covered with a covering material 9 such as epoxy resin. Further attached to the substrate 6 are a lead wire 11a connected to the base terminal 10 via the stabilizing resistor 5, and a lead wire 11b connected to the base 4, respectively.
発光ダイオードチップ7は、GaAs系、GaP系。The light emitting diode chip 7 is made of GaAs or GaP.
GaAsP GaAlAs系等の公知のものであるが、
モノシリツクIC化された整流回路素子から成る整流手
段8は、第4図に示したように、シリコン基板12−■
−に、例えばアイソレーションにより酸化シリコン5i
Ozによる絶縁層13a 、 13bを縦、横方向に形
成させ、このようにして出来た各アイランドにn形14
aとP形14bのシリコン層を形成させることによって
整流ダイオード14.14・・・を形成させたものであ
り、このような整流ダイオード14.14を第5図に示
したように4個ブリッジ型に接続させることにより、余
波整流回路15を構成させたものである。Although it is a known one such as GaAsP GaAlAs system,
As shown in FIG.
- to silicon oxide 5i, for example by isolation.
Insulating layers 13a and 13b made of Oz are formed in the vertical and horizontal directions, and an n-type layer 14 is formed on each island thus formed.
Rectifier diodes 14,14... are formed by forming silicon layers of a and P type 14b, and four such rectifier diodes 14,14 are arranged in a bridge type structure as shown in FIG. The aftereffect rectifier circuit 15 is configured by connecting to the following.
そして、この余波整流回路15へは、とくに第5図に示
したように基板6上に設けた発光ダイオード7.7eφ
・が直列で接続されている。The aftereffect rectifier circuit 15 is connected to a light emitting diode 7.7eφ provided on the substrate 6 as shown in FIG.
・are connected in series.
実際の実施例としては、モノシリツクIC化させた整流
回路素子を1.2■/■角とし1発光ダイオー′ドを0
.3m/*角として場合、口径4.5中の筒体内に基板
ごと収装できた。As an actual example, the rectifier circuit element made into a monolithic IC will be 1.2 mm square, and one light emitting diode will be 0.2 mm square.
.. In the case of 3 m/* square, the entire board could be housed in a cylinder with a diameter of 4.5 mm.
尚、リード線11a 、 llbと整流手段8.及び整
流手段8と発光ダイオード7.7・・・間の接続は、図
示してないが例えば極細の金線等によるのであり、筒体
2は放熱効果を上げるため、熱電導率の良い銅やアルミ
ニウム酸のものを用いている0反射鏡の上部には必要に
応じてカバー等が被せられても良い。Note that the lead wires 11a and llb and the rectifying means 8. The connection between the rectifying means 8 and the light emitting diodes 7, 7, etc. is not shown, but is made of, for example, an extremely thin gold wire, etc., and the cylindrical body 2 is made of copper, which has good thermal conductivity, or the like, in order to improve the heat dissipation effect. If necessary, a cover or the like may be placed over the 0-reflector made of aluminum acid.
この発明は以上のように構成したので、交流電源に直接
接続させても、整流手段8によって整流され、順方向電
圧が発光ダイオード7.7・・・に印加されるのであり
、p−n接合部での少数キャリアの注入と、これに続く
発光再結合現象により高い輝度の可視光が放出され反射
鏡lを介して前方へ放射されることになる。Since the present invention is configured as described above, even if it is directly connected to an AC power source, it is rectified by the rectifying means 8 and a forward voltage is applied to the light emitting diodes 7, 7, etc., and the p-n junction Due to the injection of minority carriers at the point and the subsequent radiative recombination phenomenon, high-intensity visible light is emitted and radiated forward via the reflecting mirror l.
発光ダイオード7.7・Φ・は実施例では4個のものを
直列接続したものを示したがそれ以下、或いはそれ以上
であって良いことは勿論であり、接続は並列であっても
良い。整流手段8の設置位置はとくに限定はなく、一つ
の発光ダイオード7にとくに隣接して設置しても良い。In the embodiment, four light-emitting diodes 7.7.Φ. are shown connected in series, but it goes without saying that the number of light-emitting diodes 7.7.Φ. may be less than or greater than that, and the connection may be made in parallel. The installation position of the rectifying means 8 is not particularly limited, and it may be installed especially adjacent to one light emitting diode 7.
また、実施例では整流手段8は4個の整流ダイオード1
4.14を用いているがこの数にはとくに限定はなく、
その他の公知の整流手段に代えることができる。In addition, in the embodiment, the rectifying means 8 includes four rectifying diodes 1.
4.14 is used, but there is no particular limit to this number,
Other known rectifying means may be used instead.
また、電源と整流手段8との間には、安定抵抗5を介在
させであるので、この安定抵抗5により過大な電圧が各
整流ダイオード7.7・・・に印加されるのを防止でき
るものである。In addition, since a stabilizing resistor 5 is interposed between the power source and the rectifying means 8, this stabilizing resistor 5 can prevent excessive voltage from being applied to each rectifying diode 7, 7... It is.
当然のことながらこの発明に係るLEDランプは、直流
電源にそのまま接続できることは言うまでもない。It goes without saying that the LED lamp according to the present invention can be directly connected to a DC power source.
以上詳細に説明したようにこの発明は、基板」−におけ
る整流手段の設置場所に限定がなくなると共に、交流と
直流のどちらの電源にも接続できるLEDランプを極め
て小型にすることができ、その上従来のものに勝るとも
劣らない高い輝度の可視光を放射できるという作用効果
を奏し得る。As explained in detail above, the present invention eliminates limitations on the installation location of the rectifier on the board, makes it possible to make an LED lamp extremely compact that can be connected to either an alternating current or direct current power source, and It is possible to achieve the effect of being able to emit visible light with high brightness comparable to that of conventional ones.
第1図はこの発明に係るLEDランプの縦断面図、第2
図は量拡大平面図、第3図は同拡大断面図、第4図は整
流回路素子の断面図、第5図は回路図である。
6・・・基板 7,7・・発光ダイオード800
.整流手段 12−−−シリコン基板13a 、 1
3b絶縁層 14.14・・整流ダイオード15・・
・全波整流回路FIG. 1 is a vertical cross-sectional view of an LED lamp according to the present invention, and FIG.
3 is an enlarged sectional view thereof, FIG. 4 is a sectional view of the rectifier circuit element, and FIG. 5 is a circuit diagram. 6...Substrate 7,7...Light emitting diode 800
.. Rectifying means 12---Silicon substrate 13a, 1
3b insulating layer 14.14... rectifier diode 15...
・Full wave rectifier circuit
Claims (1)
整流手段とを有し、前記基板の上面を被覆材で覆うと共
に、前記整流手段をモノシリックIC化した整流回路素
子で構成したことを特徴とする、交直両用LEDランプ
。one or more light emitting diodes installed on a substrate;
1. A dual-use LED lamp comprising: a rectifying means; the upper surface of the substrate is covered with a covering material; and the rectifying means is constituted by a monolithic IC rectifier circuit element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60172921A JPS6232664A (en) | 1985-08-05 | 1985-08-05 | Led lamp for both ac and dc |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60172921A JPS6232664A (en) | 1985-08-05 | 1985-08-05 | Led lamp for both ac and dc |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6232664A true JPS6232664A (en) | 1987-02-12 |
Family
ID=15950822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60172921A Pending JPS6232664A (en) | 1985-08-05 | 1985-08-05 | Led lamp for both ac and dc |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6232664A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1117135A2 (en) * | 2000-01-12 | 2001-07-18 | Oxley Developments Company Limited | Led package |
JP2012212905A (en) * | 2007-07-17 | 2012-11-01 | Cree Inc | Led with integrated constant current driver |
US8487321B2 (en) | 2005-12-13 | 2013-07-16 | Epistar Corporation | AC light emitting assembly and AC light emitting device |
US8704241B2 (en) | 2005-05-13 | 2014-04-22 | Epistar Corporation | Light-emitting systems |
US8803313B2 (en) | 2003-01-02 | 2014-08-12 | Cree, Inc. | Group III nitride based flip-chip integrated circuit and method for fabricating |
-
1985
- 1985-08-05 JP JP60172921A patent/JPS6232664A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1117135A2 (en) * | 2000-01-12 | 2001-07-18 | Oxley Developments Company Limited | Led package |
EP1117135A3 (en) * | 2000-01-12 | 2007-03-21 | Oxley Developments Company Limited | Led package |
US9226383B2 (en) | 2003-01-02 | 2015-12-29 | Cree, Inc. | Group III nitride based flip-chip integrated circuit and method for fabricating |
US8803313B2 (en) | 2003-01-02 | 2014-08-12 | Cree, Inc. | Group III nitride based flip-chip integrated circuit and method for fabricating |
US9985074B2 (en) | 2005-05-13 | 2018-05-29 | Epistar Corporation | Light-emitting device |
US9490234B2 (en) | 2005-05-13 | 2016-11-08 | Epistar Corporation | Alternative current light-emitting systems |
US8704241B2 (en) | 2005-05-13 | 2014-04-22 | Epistar Corporation | Light-emitting systems |
US9093292B2 (en) | 2005-10-07 | 2015-07-28 | Epistar Corporation | Light-emitting systems |
US9070573B2 (en) | 2005-10-07 | 2015-06-30 | Epistar Corporation | Light-emitting systems |
US8487321B2 (en) | 2005-12-13 | 2013-07-16 | Epistar Corporation | AC light emitting assembly and AC light emitting device |
US8810151B2 (en) | 2007-07-17 | 2014-08-19 | Cree, Inc. | LED with integrated constant current driver |
US8569970B2 (en) | 2007-07-17 | 2013-10-29 | Cree, Inc. | LED with integrated constant current driver |
JP2012212905A (en) * | 2007-07-17 | 2012-11-01 | Cree Inc | Led with integrated constant current driver |
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