JPS62293671A - Passivation layer of solid-state image sensing device - Google Patents
Passivation layer of solid-state image sensing deviceInfo
- Publication number
- JPS62293671A JPS62293671A JP61136783A JP13678386A JPS62293671A JP S62293671 A JPS62293671 A JP S62293671A JP 61136783 A JP61136783 A JP 61136783A JP 13678386 A JP13678386 A JP 13678386A JP S62293671 A JPS62293671 A JP S62293671A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- thin film
- solid
- polyimide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 11
- 229920001721 polyimide Polymers 0.000 claims abstract description 17
- 238000003384 imaging method Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 18
- 239000010408 film Substances 0.000 abstract description 7
- 239000004642 Polyimide Substances 0.000 abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 238000001312 dry etching Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Formation Of Insulating Films (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は、固体撮像装置において、耐不純物性及び耐湿
性の良好なパッシベーション層の構造及びその製造方法
に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a structure of a passivation layer having good impurity resistance and moisture resistance in a solid-state imaging device, and a method for manufacturing the same.
従来の固体撮像装置のパッシベーション層としては、不
純物イオンによる汚染を防ぐ事と、耐湿性を向上させる
という２つの目的を実現する為に、下部に有機樹脂薄膜
、その上部に無機質薄膜を有する２Ｎバンシベーシヨン
構造が提案されている。The passivation layer of conventional solid-state imaging devices is a 2N passivation layer, which has an organic resin thin film on the bottom and an inorganic thin film on top, to achieve the two purposes of preventing contamination by impurity ions and improving moisture resistance. structure is proposed.
その製造方法を第２図に示す、同図（ａｌに示すように
有機樹脂薄膜２−１、無機質薄膜２−２を積層後、フォ
トレジストマスク２−３を形成する０次に同図（ｂ＋に
示すように無機質薄膜２−２をエツチングし、続いて同
図（Ｃ１に示すように有機樹脂薄膜２−１をドライエツ
チングすると共にフォトレジストマスクも剥離する。こ
こで２−４はバンド電極である。The manufacturing method is shown in FIG. 2. After laminating an organic resin thin film 2-1 and an inorganic thin film 2-2 as shown in FIG. As shown in Figure C1, the inorganic thin film 2-2 is etched, and then, as shown in Figure C1, the organic resin thin film 2-1 is dry etched and the photoresist mask is also removed.Here, 2-4 is a band electrode. be.
しかしながら上述の従来技術では、次の２つの大きな問
題点が生じる。However, the above-mentioned conventional technology causes the following two major problems.
（１）固体撮像装置の耐湿性が不足する。(1) Moisture resistance of the solid-state imaging device is insufficient.
（２）バンドオーブン孔は、無機質薄膜がひさしのよう
に飛び出しオーバーハング構造２−５になる。(2) The band oven hole has an overhang structure 2-5 in which the inorganic thin film protrudes like an eaves.
第１項目の原因としては、上部の無機質薄膜のピンホー
ルあるいはクランクなどにより、下部の有機樹脂薄膜に
直接水分が当たる為に、その部分で耐湿性が悪（なる、
また第２項目の原因は、第２図で示しているとおり、有
機樹脂薄膜が等方エッチされる為である。このような構
造になると、後工程でレジスト塗布をすると、オーバー
ハングの下の部分にはレジストが入り込まない為に、塗
布ムラとなり、プロセス欠陥となってしまう。そこで本
発明の目的は、これらのバンドオープン孔に生じるバー
ド−バング構造を解決し、さらに耐湿性の良好なパッシ
ベーション層の構造及びその製造方法を提案することで
ある。The first cause is that the pinholes or cranks in the upper inorganic thin film cause moisture to directly hit the lower organic resin thin film, resulting in poor moisture resistance in that area.
The reason for the second item is that the organic resin thin film is isotropically etched, as shown in FIG. In such a structure, when a resist is applied in a subsequent process, the resist does not penetrate into the area under the overhang, resulting in uneven coating and a process defect. SUMMARY OF THE INVENTION An object of the present invention is to solve the bird-bang structure that occurs in these band open holes, and to propose a passivation layer structure with good moisture resistance and a method for manufacturing the same.
本発明の固体逼像装置のパッシベーション層は、光電変
換素子を複数個配列して成る固体１最像装置において、
第Ｌｌｌ目はポリイミド膜、第２層目はＳｉｎ、膜、そ
して第３Ｆ！目は、感光性ポリイミド膜から形成される
３層バンシベーション構造を存することを特徴とする。The passivation layer of the solid-state imaging device of the present invention is a solid-state imaging device comprising a plurality of photoelectric conversion elements arranged.
The Lllth layer is a polyimide film, the second layer is a Sin film, and the third F! The eye is characterized by having a three-layer bancivation structure formed from a photosensitive polyimide film.
〔作 用〕
本発明の構成によれば、耐湿性の良好なパンシベーシ３
ン層を作製する事が可能となり、さらにバンドオーブン
孔のオーバーハング構造が解消されるので、後工程での
プロセス欠陥の発生を低減させる事が出来る。[Function] According to the configuration of the present invention, the pancibasis 3 with good moisture resistance
In addition, since the overhang structure of the band oven hole is eliminated, the occurrence of process defects in subsequent steps can be reduced.
第１図に、本発明における固体逼像装置のパッシベーシ
ョン層の構造とその製造方法を示す。同図＋ａｌに示す
ようにポリイミド膜１−１をスピンコードして焼成した
後、Ｓｉｎｇあるいは５ｉｚＮａあるいはダイヤモンド
薄膜などの無ｔＲＸ ａ膜１−２を形成する。光電変換
素子の耐熱性より前記無機質薄膜の形成方法は限定され
る０例えば非晶質Ｓ ｉ 、（ａ−３ｉ ： Ｈ）を用
いている場合は、約２５０℃以下としなければならない
、従って、スパッタ法あるいはプラズマＣＶＤ法などが
有効となる。その後、バンドオープンのパターンのフォ
トレジストマスク１−３を形成する。該フォトレジスト
マスクで前記無機質薄膜をエツチングする。FIG. 1 shows the structure of a passivation layer of a solid-state imaging device according to the present invention and its manufacturing method. As shown in +al of the figure, after a polyimide film 1-1 is spin-coded and fired, a non-tRX a film 1-2 such as Sing, 5izNa, or diamond thin film is formed. The method of forming the inorganic thin film is limited due to the heat resistance of the photoelectric conversion element. For example, when using amorphous Si, (a-3i: H), the temperature must be about 250° C. or less. Therefore, A sputtering method or a plasma CVD method is effective. Thereafter, a photoresist mask 1-3 having a band open pattern is formed. The inorganic thin film is etched using the photoresist mask.
ここで１−４はバンド電極である９次に同図価）に示す
ように、フォトレジストマスク１−３及び無ｍｔ＊膜１
−２をマスクとしてポリイミド膜１−工をドライエッチ
する。ドライエッチは０□とＣＦ、の混合ガスを用いた
プラズマエッチが適している。一方ｏ２プラズマにより
フォトレジストマスクも同時にエツチングされるので、
あらためてレジスト剥離を行なう必要はない、ここまで
は従来のパンシベーシッンの工程と同じである。ここで
は等方性のドライエツチングの為にポリイミド膜は１−
５に示すようにひさしのようなオーバーハング構造とな
る。続いて同図（Ｃ１に示すように、感光性ポリイミド
１−６を塗布し、フォト工程を通してバンドオーブン孔
を形成する。このままで前記無機質薄膜のエツチング液
に浸漬すれば、オーバーハング構造１−５を除去するこ
とができ同図（ｄ）に示すような構造が完成する。Here, 1-4 is a band electrode (9th order) As shown in the same diagram), a photoresist mask 1-3 and a non-mt* film 1
Polyimide film 1- is dry-etched using -2 as a mask. Plasma etching using a mixed gas of 0□ and CF is suitable for dry etching. On the other hand, since the photoresist mask is etched at the same time by O2 plasma,
There is no need to perform resist stripping again; the process up to this point is the same as the conventional pansibasin process. Here, due to isotropic dry etching, the polyimide film is 1-
As shown in Figure 5, it forms an overhanging structure like an eaves. Subsequently, as shown in the same figure (C1), a photosensitive polyimide 1-6 is applied and a band oven hole is formed through a photo process.If the film is immersed in the inorganic thin film etching solution as it is, an overhang structure 1-5 is formed. can be removed, and a structure as shown in FIG. 3(d) is completed.
以上述べたように、本発明の構成によれば、耐湿性が向
上される。つまり、ポリイミド膜は一般的に保水性は大
きいが、水分を透過させにくい。As described above, according to the configuration of the present invention, moisture resistance is improved. In other words, although polyimide membranes generally have a high water retention capacity, they do not allow moisture to pass through easily.
従って、第３層目に付けである感光性ポリイミドが湿気
を保つが膜自身を透過する水分は極めて少ない。この透
過したわずかな水分は、第２層目に存在する無機質薄膜
に阻止されて、それより深部への水分の浸入は、はぼ完
全に防止することができる。前記無機質薄膜がポーラス
な膜であったとしても前記第３Ｎ百の感光性ポリイミド
が存在するので、このような無ｍ’ｌｔ薄膜に欠陥があ
ったとしてもまったく問題にならない。この点は重要で
ある０例えば、水素化非晶質シリコン（ａ−５ｉ：Ｈ）
を用いた固体１像装置の場合、プロセス温度は約２５０
℃以下に制限される為、スパッタ３ｉ０＊などのクラン
クやピンホールの生じやすい無機質薄膜を用いる事を余
儀なくされる。このような場合でも、本発明のバンシベ
ーシ３ン構造を採用すれば、耐湿性を保障することがで
きる。Therefore, although the photosensitive polyimide attached to the third layer retains moisture, very little moisture permeates through the membrane itself. This small amount of water that permeates is blocked by the inorganic thin film present in the second layer, and the penetration of water deeper than that can be almost completely prevented. Even if the inorganic thin film is a porous film, since the 3N100 photosensitive polyimide is present, even if such a m'lt-free thin film has defects, it will not be a problem at all. This point is important. For example, hydrogenated amorphous silicon (a-5i:H)
In the case of a solid-state single imager using
Since the temperature is limited to below .degree. C., it is necessary to use an inorganic thin film such as sputtered 3i0* which is prone to producing cranks and pinholes. Even in such a case, moisture resistance can be ensured by employing the bancibasin structure of the present invention.
一方、バンドオーブン孔のひさし部分のオーバーハング
構造も解消することができるので、後工程でのレジスト
塗布性が同上し、プロセス欠陥を低減することが可能と
なる。さらにオーバーハング部の欠落の心配もないので
、プロセス途上でのゴミの発生もおさえることができる
。このように本発明は、耐不純物性及び耐湿性が良好で
、しかも工程欠陥の極めて少ないパッシベーション構造
の製造方法を提案するものである。On the other hand, since the overhang structure of the eaves of the band oven hole can also be eliminated, the resist coating properties in the subsequent process are improved, and process defects can be reduced. Furthermore, since there is no need to worry about missing overhang parts, it is possible to suppress the generation of dust during the process. As described above, the present invention proposes a method for manufacturing a passivation structure that has good impurity resistance and moisture resistance, and has extremely few process defects.
第１図（ａｌから（ｄｌは本発明の固体描像装置のバフ
シベーション層の製造方法を示す工程図である。
第２図ｆａｌから（Ｃ１は、従来の固体１最像装置のパ
ンシベーシジン層の製造方法を示す工程図である。
１−６・・・・・・感光性ポリイミド
１−２・・・・・・無機ｆｆｉ膜
２−５・・・・・・オーバーバンク構造板 上
出願人 セイコーエプソン株式会社
望ン
ｃｃ−）
Ｃｄ）
第１図Figures 1 (al to dl) are process diagrams showing the method for manufacturing the buffscivation layer of the solid-state imaging device of the present invention. It is a process diagram showing the manufacturing method. 1-6... Photosensitive polyimide 1-2... Inorganic FFI film 2-5... Overbank structure plate Upper applicant: Seiko Epson Corporation cc-) Cd) Figure 1
Claims (1)
て、第１層目はポリイミド膜、第２層目はＳｉＯ＿２膜
、そして第３層目は、感光性ポリイミド膜から形成され
る３層パッシベーション構造を有することを特徴とする
固体撮像装置のパッシベーション層。In a solid-state imaging device formed by arranging a plurality of photoelectric conversion elements, a three-layer passivation structure is formed in which the first layer is a polyimide film, the second layer is an SiO_2 film, and the third layer is a photosensitive polyimide film. A passivation layer for a solid-state imaging device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136783A JPS62293671A (en) | 1986-06-12 | 1986-06-12 | Passivation layer of solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61136783A JPS62293671A (en) | 1986-06-12 | 1986-06-12 | Passivation layer of solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62293671A true JPS62293671A (en) | 1987-12-21 |
Family
ID=15183414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61136783A Pending JPS62293671A (en) | 1986-06-12 | 1986-06-12 | Passivation layer of solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62293671A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6908311B2 (en) | 2002-04-26 | 2005-06-21 | Sharp Kabushiki Kaisha | Connection terminal and a semiconductor device including at least one connection terminal |
| JP2016207707A (en) * | 2015-04-16 | 2016-12-08 | 日本電信電話株式会社 | Semiconductor device and manufacturing method of the same |
-
1986
- 1986-06-12 JP JP61136783A patent/JPS62293671A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6908311B2 (en) | 2002-04-26 | 2005-06-21 | Sharp Kabushiki Kaisha | Connection terminal and a semiconductor device including at least one connection terminal |
| JP2016207707A (en) * | 2015-04-16 | 2016-12-08 | 日本電信電話株式会社 | Semiconductor device and manufacturing method of the same |
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