JPH0447244A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0447244A JPH0447244A JP15791890A JP15791890A JPH0447244A JP H0447244 A JPH0447244 A JP H0447244A JP 15791890 A JP15791890 A JP 15791890A JP 15791890 A JP15791890 A JP 15791890A JP H0447244 A JPH0447244 A JP H0447244A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- diaphragm
- compensation
- detection
- offset voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000001514 detection method Methods 0.000 claims abstract description 32
- 230000000694 effects Effects 0.000 abstract description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 108010053481 Antifreeze Proteins Proteins 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体圧力センサの構造に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a semiconductor pressure sensor.
第２図は従来の半導体圧力センサを示す断面図であり、
この図において、１は、例えばシリコン等の半導体チッ
プ、２は圧力を検知する検出用ダイヤフラム、３はこの
検出用ダイヤフラム２上に形成された検出用歪ゲージ、
４は前記半導体チップ１を保持する台座、５は基準圧力
室、６はこの基準圧力室５を形成する蓋、７は前記台座
４を保持するベース、８は前記台座４とベース７を接合
する接着剤、９は外部リード、１ｏは前記半導体チップ
１と外部リード９を結ぶワイヤ、１１はキャップ、１２
は前記ペース７とキャップ１１を接合する接着剤、１３
は前記ペース７に設けられた圧力導入管である。FIG. 2 is a cross-sectional view showing a conventional semiconductor pressure sensor.
In this figure, 1 is a semiconductor chip such as silicon, 2 is a detection diaphragm that detects pressure, 3 is a detection strain gauge formed on this detection diaphragm 2,
4 is a pedestal that holds the semiconductor chip 1, 5 is a reference pressure chamber, 6 is a lid that forms this reference pressure chamber 5, 7 is a base that holds the pedestal 4, and 8 is used to join the pedestal 4 and the base 7 together. adhesive, 9 is an external lead, 1o is a wire connecting the semiconductor chip 1 and the external lead 9, 11 is a cap, 12
13 is an adhesive for bonding the paste 7 and the cap 11;
is a pressure introduction pipe provided in the pace 7.
次に、動作について説明する。Next, the operation will be explained.
圧力導入管１３より導入された圧力が検出用ダイヤフラ
ム２に印加されると、この圧力と基準圧力室５の圧力差
により検出用ダイヤフラム２が歪んで、応力を受ける。When the pressure introduced from the pressure introduction pipe 13 is applied to the detection diaphragm 2, the detection diaphragm 2 is distorted and subjected to stress due to the pressure difference between this pressure and the reference pressure chamber 5.
すると、検出用ダイヤフラム２上に形成された検出用歪
ゲージ３の抵抗値が変化する。これを電気信号としてワ
イヤ１０を介し外部リード９に伝達すれば、圧力を電気
信号に変換した出力を取り出す（とができる。検出用歪
ゲージ３はホイートストンブリッジ状に接続してあり、
出力はブリッジの両端の差電圧となる。したがって、検
出用歪ゲージ３が歪まなければ出力電圧は０となるはず
であるが、組立ての残留応力等により、ある電圧が出力
される。これをオフセット電圧というが、圧力に対する
半導体圧力センサの出力は常にオフセット電圧が重畳さ
れたものとなる。Then, the resistance value of the detection strain gauge 3 formed on the detection diaphragm 2 changes. If this is transmitted as an electrical signal to the external lead 9 via the wire 10, an output that converts the pressure into an electrical signal can be obtained.The detection strain gauge 3 is connected in a Wheatstone bridge shape.
The output is the differential voltage across the bridge. Therefore, if the detection strain gauge 3 is not distorted, the output voltage should be 0, but due to residual stress during assembly, etc., a certain voltage is output. This is called an offset voltage, and the output of the semiconductor pressure sensor with respect to pressure is always superimposed with the offset voltage.
従来の半導体圧力センサは以上のように構成されている
ので、感度を上げようとして検出用ダイヤフラム２を薄
くしていくと、台座４や蓋６と半導体チップ１の接合部
、あるいは半導体チップ１上に構成された金属等の薄膜
の影響により、圧力導入管１３の圧力が基準圧力室５の
圧力と同等のときのオフセット電圧が大きくなり、しか
も、温度変化による応力を受はオフセット電圧が温度特
性あるいは残留応力による熱によるヒステリシスを持つ
といった問題点があった。Since the conventional semiconductor pressure sensor is constructed as described above, when the detection diaphragm 2 is made thinner in an attempt to increase the sensitivity, the contact area between the pedestal 4, the lid 6 and the semiconductor chip 1, or the top of the semiconductor chip 1 is Due to the effect of the thin film made of metal or the like constructed in Another problem was that it had hysteresis due to heat due to residual stress.
この発明は、上記のような問題点を解消するためになさ
れたもので、オフセット電圧を電気的に補償し、かつそ
の温度特性あるいは熱ヒステリシスも補完した半導体圧
力センサを得ろことを目的とする。The present invention has been made to solve the above-mentioned problems, and aims to provide a semiconductor pressure sensor that electrically compensates for offset voltage and also compensates for its temperature characteristics or thermal hysteresis.
この発明に係る半導体圧力センサは、圧力を検知する検
出用ダイヤプラムの近傍にこの検出用ダイヤプラムと同
一形状の補償用ダイヤフラムを設け、前記各々のダイヤ
フラム上に同一形状の検出用歪ゲージと、この検出用歪
ゲージの出力を補償する補償用歪ゲージとを形成し、前
記補償用ダイヤフラムの両面には常に同一圧力が印加さ
れる構造としたものである。The semiconductor pressure sensor according to the present invention includes a compensation diaphragm having the same shape as the detection diaphragm in the vicinity of the detection diaphragm for detecting pressure, and a detection strain gauge having the same shape on each of the diaphragms; A compensating strain gauge is formed to compensate for the output of the detecting strain gauge, and the same pressure is always applied to both sides of the compensating diaphragm.
この発明による半導体圧力センサは、圧力を検知する検
出用ダイヤフラムと、温度特性あるいは熱によるヒステ
リシスを補償する補償用ダイヤプラムを同一条件にて形
成し、しかも前記補償用ダイヤフラムの両面には同一の
圧力がかかる構造としているため、検出用ダイヤフラム
の両面に同一の圧力が印加されたときと同一の温度特性
を示す、すなわち同一のオフセラ１−電圧を発生させる
ので、これを電気的に減算することにより本来の半導体
圧力センサのオフセット電圧の温度特性あるいは熱によ
るヒステリシスを補償する。In the semiconductor pressure sensor according to the present invention, a detection diaphragm that detects pressure and a compensation diaphragm that compensates for temperature characteristics or thermal hysteresis are formed under the same conditions, and the same pressure is applied to both sides of the compensation diaphragm. Since the structure is such that when the same pressure is applied to both sides of the detection diaphragm, the temperature characteristics are the same as when the same pressure is applied to both sides, that is, the same offset voltage is generated, so by subtracting this electrically, Compensates for the temperature characteristics or heat-induced hysteresis of the offset voltage of the original semiconductor pressure sensor.
以下、この発明の一実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図において、１４は温度特性あるいは熱によるヒス
テリシスを補償する補償用ダイヤフラム、１５ば補償用
歪ゲージ、１６は前記基準圧力室５と同一圧力を持った
補償用圧力室である。なお、その他の符号は第２図と同
じものを示す。In FIG. 1, 14 is a compensation diaphragm for compensating for temperature characteristics or hysteresis due to heat, 15 is a compensation strain gauge, and 16 is a compensation pressure chamber having the same pressure as the reference pressure chamber 5. Note that other symbols indicate the same things as in FIG. 2.
次に、動作について説明する。Next, the operation will be explained.
圧力導入１ｒ１３から導入される圧力が基準圧力室５の
圧力と等しいとき、ブリッジ接続された検出用歪ゲージ
３の出力はオフセット電圧となる。When the pressure introduced from the pressure introduction 1r13 is equal to the pressure in the reference pressure chamber 5, the output of the bridge-connected detection strain gauge 3 becomes an offset voltage.
また、補償用圧力室１６と基準圧力室５の圧力を等しく
しておけば、補償用ダイヤフラム１４ば圧力による応力
を受けないから、ブリッジ接続された補償用歪ゲージ１
５の出力もオフセット電圧となる。検出用ダイヤフラム
２と補償用ダイヤフラム１４、検出用歪ゲージ３と補償
用歪ゲージ１５を同一形状に形成すれば、双方のオフセ
ラ１〜電圧は同等となり、かつ温度特性や熱によるヒス
テリシスも同等となる。これをブリッジ回路、比較回路
等の手段により電気的に減算すれば半導体圧力センサの
出力はオフセット電圧の影響を受けなくなる。Furthermore, if the pressures in the compensation pressure chamber 16 and the reference pressure chamber 5 are made equal, the compensation diaphragm 14 will not receive stress due to pressure, so the bridge-connected compensation strain gauge 1
The output of 5 also becomes an offset voltage. If the detection diaphragm 2 and the compensation diaphragm 14 and the detection strain gauge 3 and the compensation strain gauge 15 are formed in the same shape, the off-celler 1 to voltage of both will be the same, and the temperature characteristics and hysteresis due to heat will also be the same. . If this is electrically subtracted by means such as a bridge circuit or a comparator circuit, the output of the semiconductor pressure sensor will no longer be affected by the offset voltage.
なお、上記実施例では、基準圧力室５を設けた絶対圧計
測用のものを示したが、基準圧力室５を設けず、大気解
放とするゲージ圧形のものや、検出用ダイヤフラム２上
面に圧力導入管１３とは別の圧力導入管を設けた差圧形
のものについても、補償用ダイヤフラム１４の両面の圧
力を常に等しく保つような構造とすれば同様の効果が得
られる。In the above embodiment, the reference pressure chamber 5 is provided for absolute pressure measurement, but there is also a gauge pressure type that is not provided with the reference pressure chamber 5 and is opened to the atmosphere, or a gauge pressure type that is not provided with the reference pressure chamber 5 and is opened to the atmosphere. A similar effect can be obtained even with a differential pressure type in which a pressure introduction pipe other than the pressure introduction pipe 13 is provided, if the structure is such that the pressure on both sides of the compensating diaphragm 14 is always kept equal.
以上説明したように、この発明は、検出用ダイヤプラム
の近傍にこの検出用ダイヤプラムと同一形状の補償用ダ
イヤフラムを設け、前記各々のダイヤプラムの上面に同
一形状の検出用歪ゲージと、この検出用歪ゲージの出力
を補償する補償用歪ゲージとを形成し、前記補償用ダイ
ヤプラムの両面には常に同一圧力が印加されるよう構成
したので、検出用ダイヤフラムの両面に同一圧力が印加
されたときのオフセット電圧を補償することができ、非
常に精度の高い半導体圧カセンサが得られる効果がある
。As explained above, in the present invention, a compensation diaphragm having the same shape as the detection diaphragm is provided near the detection diaphragm, and a detection strain gauge having the same shape is provided on the upper surface of each of the diaphragms. A compensation strain gauge is formed to compensate for the output of the detection strain gauge, and the same pressure is always applied to both sides of the compensation diaphragm, so that the same pressure is applied to both sides of the detection diaphragm. This has the effect of making it possible to compensate for the offset voltage that occurs when the pressure is applied, and providing a highly accurate semiconductor pressure sensor.
第１図はこの発明の一実施例による半導体圧力センサを
示す断面図、第２図は従来の半導体圧力センサを示す断
面図である。
図において、１は半導体チップ、２は検出用ダイヤフラ
ム、３は検出用歪ゲート、５は基準圧力室、１４は補償
用ダイヤフラム、１５は補償用歪ゲージ、１６は補償用
圧力室である。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第
図FIG. 1 is a sectional view showing a semiconductor pressure sensor according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional semiconductor pressure sensor. In the figure, 1 is a semiconductor chip, 2 is a detection diaphragm, 3 is a detection strain gate, 5 is a reference pressure chamber, 14 is a compensation diaphragm, 15 is a compensation strain gauge, and 16 is a compensation pressure chamber. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Fig.
Claims (1)
ダイヤフラムと同一形状の補償用ダイヤフラムを設け、
前記各々のダイヤフラム上に同一形状の検出用歪ゲージ
と、この検出用歪ゲージの出力を補償する補償用歪ゲー
ジとを形成し、前記補償用ダイヤフラムの両面には常に
同一圧力が印加される構造としたことを特徴とする半導
体圧力センサ。A compensation diaphragm with the same shape as the detection diaphragm is installed near the detection diaphragm that detects pressure.
A detection strain gauge having the same shape and a compensation strain gauge for compensating the output of the detection strain gauge are formed on each of the diaphragms, and the same pressure is always applied to both sides of the compensation diaphragm. A semiconductor pressure sensor characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15791890A JPH0447244A (en) | 1990-06-14 | 1990-06-14 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15791890A JPH0447244A (en) | 1990-06-14 | 1990-06-14 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0447244A true JPH0447244A (en) | 1992-02-17 |
Family
ID=15660307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15791890A Pending JPH0447244A (en) | 1990-06-14 | 1990-06-14 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0447244A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005252357A (en) * | 2004-03-01 | 2005-09-15 | Univ Of Tokyo | Imaging device and control method thereof |
| JP2008532041A (en) * | 2005-03-10 | 2008-08-14 | テミック オートモーティブ オブ ノース アメリカ インコーポレイテッド | Absolute pressure sensor separated from the medium |
| JP2009250969A (en) * | 2008-04-04 | 2009-10-29 | Wika Alexander Wiegand Gmbh & Co Kg | Pressure sensor assembly for measuring absolute pressure |
| US8327712B2 (en) | 2009-02-27 | 2012-12-11 | Mitsubishi Electric Corporation | Semiconductor pressure sensor having symmetrical structure, and manufacturing method thereof |
| WO2013017569A1 (en) * | 2011-08-01 | 2013-02-07 | Ifm Electronic Gmbh | Method for checking the function of a pressure sensor |
| JP2014115210A (en) * | 2012-12-11 | 2014-06-26 | Seiko Epson Corp | Mems element, electronic device, altimeter, electronic apparatus and moving body |
| EP2362203A3 (en) * | 2010-02-27 | 2014-12-24 | Codman Neurosciences Sarl | Apparatus and method for minimizing drift of a piezo-resisitive pressure sensor due to the progressive release of mechanical stress over time |
| WO2015133101A1 (en) * | 2014-03-03 | 2015-09-11 | 株式会社デンソー | Pressure sensor |
| JP6385553B1 (en) * | 2017-12-13 | 2018-09-05 | 三菱電機株式会社 | Semiconductor pressure sensor |
-
1990
- 1990-06-14 JP JP15791890A patent/JPH0447244A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005252357A (en) * | 2004-03-01 | 2005-09-15 | Univ Of Tokyo | Imaging device and control method thereof |
| JP2008532041A (en) * | 2005-03-10 | 2008-08-14 | テミック オートモーティブ オブ ノース アメリカ インコーポレイテッド | Absolute pressure sensor separated from the medium |
| JP2009250969A (en) * | 2008-04-04 | 2009-10-29 | Wika Alexander Wiegand Gmbh & Co Kg | Pressure sensor assembly for measuring absolute pressure |
| US8327712B2 (en) | 2009-02-27 | 2012-12-11 | Mitsubishi Electric Corporation | Semiconductor pressure sensor having symmetrical structure, and manufacturing method thereof |
| EP2362203A3 (en) * | 2010-02-27 | 2014-12-24 | Codman Neurosciences Sarl | Apparatus and method for minimizing drift of a piezo-resisitive pressure sensor due to the progressive release of mechanical stress over time |
| WO2013017569A1 (en) * | 2011-08-01 | 2013-02-07 | Ifm Electronic Gmbh | Method for checking the function of a pressure sensor |
| JP2014115210A (en) * | 2012-12-11 | 2014-06-26 | Seiko Epson Corp | Mems element, electronic device, altimeter, electronic apparatus and moving body |
| WO2015133101A1 (en) * | 2014-03-03 | 2015-09-11 | 株式会社デンソー | Pressure sensor |
| US9983081B2 (en) | 2014-03-03 | 2018-05-29 | Denso Corporation | Pressure sensor |
| JP6385553B1 (en) * | 2017-12-13 | 2018-09-05 | 三菱電機株式会社 | Semiconductor pressure sensor |
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