JPS6229132A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS6229132A JPS6229132A JP16870985A JP16870985A JPS6229132A JP S6229132 A JPS6229132 A JP S6229132A JP 16870985 A JP16870985 A JP 16870985A JP 16870985 A JP16870985 A JP 16870985A JP S6229132 A JPS6229132 A JP S6229132A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- gas
- type semiconductor
- reaction
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はグロー放電法を用いた半導体の製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor using a glow discharge method.
通常非晶質半導体は高真空度の反応炉内に収容した基板
を所定の温度に加熱しつつ所要の比率で混合した原料ガ
スをグロー放電によって分解し、反応炉内に導入し、基
板上に順次的に薄膜を積層形成して製造される。この非
晶質半導体中のｐ型半導体層、例えばｐ型アモルファス
シリコンカーバイト層の成膜に際しては原料ガスとして
従来シラン、並びにｐ型ドーパントとしてのシボラン及
びバンドギャップを大き（する、戸Ｆｇ胃ワイドギャッ
プ材料としてのメタンを用いるのが普通である（特願昭
５７−９５６７７号）。Normally, amorphous semiconductors are produced by heating a substrate housed in a high-vacuum reactor to a predetermined temperature, decomposing the raw material gases mixed at the desired ratio by glow discharge, introducing them into the reactor, and then dissolving them onto the substrate. It is manufactured by sequentially layering thin films. When forming a p-type semiconductor layer in this amorphous semiconductor, for example, a p-type amorphous silicon carbide layer, conventional silane is used as a raw material gas, ciborane is used as a p-type dopant, and bandgap is increased (to increase the band gap). It is common to use methane as the gap material (Japanese Patent Application No. 57-95677).
ところでこのｐ型半導体履用の原料ガスとして用いるジ
ボラン、メタンはいずれもグロー放電分解に大きなエネ
ルギーを必要とし、膜中への導入が１しく、低抵抗なワ
イドギャップのｐ型半導体層、即ちｐ型アモルファスシ
リコンカーバイト層を得鮨いという問題があった。By the way, both diborane and methane, which are used as raw material gases for this p-type semiconductor, require a large amount of energy to decompose by glow discharge. There was a problem that the mold amorphous silicon carbide layer was difficult to obtain.
本発明はかかる事情に迄みなされたものであって、そ、
の目的とするところは反応ガスとしてトリメチルボロン
を用いることによって分解が容易で反応ガスが少量且つ
少品種で済むことは勿論、暗導電率、光導電率が大きく
、低抵抗で且つ光学的ハンドギャップの大きいｎ型半導
体層を得られる半導体の製造方法を提供するにある。The present invention has been considered under such circumstances, and
By using trimethylboron as a reactive gas, it is easy to decompose and only a small amount and variety of reactive gases are required, as well as high dark conductivity, high photoconductivity, low resistance, and optical hand gap. It is an object of the present invention to provide a method for manufacturing a semiconductor that can obtain an n-type semiconductor layer with a large value.
本発明に係る半導体の製造方法は、グロー放電法を用い
てｎ型半導体層を形成する過程で、反応ガスとしてトリ
メチルボロンを用いることを特徴とする。The semiconductor manufacturing method according to the present invention is characterized in that trimethylboron is used as a reactive gas in the process of forming an n-type semiconductor layer using a glow discharge method.
以下本発明の実施状態を図面に基づき具体的に説明する
。第１゛図は本発明方法におけるｐ型非晶質半導体層の
形成態様を示す模式図であり、図中１は反応炉、２ｕ、
２ｄはグロー放電電極、３は高周波電源、４．５は原料
ガスタンク、６はロークリポンプ、７は基板を示してい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The implementation state of the present invention will be specifically described below based on the drawings. FIG. 1 is a schematic diagram showing the formation mode of a p-type amorphous semiconductor layer in the method of the present invention, in which 1 is a reactor, 2u is
2d is a glow discharge electrode, 3 is a high-frequency power source, 4.5 is a raw material gas tank, 6 is a low-pressure pump, and 7 is a substrate.
基板７はガラス製であって予めその表面には透明電極を
形成した後、反応炉１内における上、下の電極２ｕ、２
ｄ間に配設され、所要の温度に高周波加熱されるように
なっている。原料ガラスタンク４にはジシランが、また
原料ガラスタンク５にはトリメチルボロンが夫々収容さ
れており、所定の割合に混合されて反応炉１内に導入さ
れ、ここでグロー放電により分解されて基板７表面にｎ
型半導体層、具体的にはアモルファスシリコンカーバイ
Ｉｌ’ｔｆを形成するようになっている。The substrate 7 is made of glass, and after forming transparent electrodes on its surface in advance, upper and lower electrodes 2u, 2 in the reactor 1 are formed.
d, and is heated by high frequency to a required temperature. Disilane is stored in the raw material glass tank 4, and trimethylboron is stored in the raw material glass tank 5, and these are mixed at a predetermined ratio and introduced into the reactor 1, where they are decomposed by glow discharge to form the substrate 7. n on the surface
A type semiconductor layer, specifically, an amorphous silicon carbide Il'tf is formed.
続いて原料ガラスを適宜に選択してｉ型半導体層、Ｉ２
１Ｊら水素を含むｉ型アモルファスシリコン屑（ａ−５
ｉ ： Ｈ） 、ｎ型半導体層、即ち水素を含むｎ型ア
モルファスシリコンａ （ａ−５ｉ ： Ｈ）を順次［
層形成し、ｎ型半導体層上には別途へ１等を蒸着して裏
面電極を接層形成するようになっている。Next, an i-type semiconductor layer, I2, is formed by appropriately selecting raw material glass.
1J, i-type amorphous silicon scrap containing hydrogen (a-5
i : H), an n-type semiconductor layer, i.e., an n-type amorphous silicon a (a-5i : H) containing hydrogen, is sequentially [
A layer is formed on the n-type semiconductor layer, and a back electrode is formed in contact with the n-type semiconductor layer by separately depositing a layer such as No. 1 on the n-type semiconductor layer.
次に前述した如き本発明方法によって得たｐ型非晶質半
導体層と、従来方法である原料ガラスにジボラン、メタ
ン及びシランを用いて製作したｐ型非晶質半導体層との
特性についての比較試験結果を示す。なお本発明方法に
あっては反応ガラスとしてジシランとトリメチルボロン
を用いて下記の条件でｐ型非晶質半導体層を形成した。Next, we will compare the characteristics of the p-type amorphous semiconductor layer obtained by the method of the present invention as described above and the p-type amorphous semiconductor layer produced by the conventional method using diborane, methane, and silane as raw material glass. Show the test results. In the method of the present invention, a p-type amorphous semiconductor layer was formed using disilane and trimethylboron as the reaction glass under the following conditions.
基板温度：２００℃
反応圧カニ ０．３ｔｏｒｒ
ジシラン量：２０〜５０ＳＣＣＭ
トリメチルボロン流量：０．１〜２ ＳＣＣＭ高周波出
力＝２０Ｗ
形成された両ｐ型非晶質半導体層の特性を示すと第２〜
５図に示すとおりである。第２．３図は本発明方法に依
って得た、また第４，５図は従来方法に依って得たｐ型
非晶質半導体層の結果である。Substrate temperature: 200°C Reaction pressure: 0.3 torr Disilane amount: 20 to 50 SCCM Trimethyl boron flow rate: 0.1 to 2 SCCM high frequency output = 20 W The characteristics of both p-type amorphous semiconductor layers formed are as follows.
As shown in Figure 5. 2.3 shows the results of a p-type amorphous semiconductor layer obtained by the method of the present invention, and FIGS. 4 and 5 show the results of a p-type amorphous semiconductor layer obtained by the conventional method.
第２図は横軸ニＢ （ＣＨ３） ３ ／５ｉ２Ｈｓを、
一方第４図は横軸にＣＨ４／Ｓｉ２ Ｈ６を、また縦軸
にはいずれも光学的バンドギャップ（ｅＶ）をとって示
しである。In Figure 2, the horizontal axis dB (CH3) 3 /5i2Hs,
On the other hand, in FIG. 4, the horizontal axis represents CH4/Si2 H6, and the vertical axis represents the optical band gap (eV).
また第３図は横軸にＢ （ＣＨ３） ３ ／Ｓｉ２ Ｈ
６を、一方第５図は横軸にＣｆ１３ ／ Ｓｉ２ Ｈ６
を、また縦軸にはいずれも導電率（Ω−’ｃｍ’）をと
って示しである。第３，５図中白丸でプロットしである
のは光導電率を、また黒丸でプロットしであるのは暗４
電率を夫々示している。In addition, in Figure 3, the horizontal axis shows B (CH3) 3 /Si2 H
6, whereas in Fig. 5, the horizontal axis shows Cf13/Si2 H6.
, and the conductivity (Ω-'cm') is plotted on the vertical axis. In Figures 3 and 5, the white circles plot the photoconductivity, and the black circles plot the dark 4.
Each shows the electric rate.
これら各グラフを比較すれば明らかな如く本発明方法に
依って得たｐ型非晶質半導体層は従来方法に依って得た
ｐ型非晶質半導体層と比較して光学的バンドギャップが
大きくなっていることば勿論、光学導電率はｌＸｌ０−
５Ω−１ｃｍ−１からｌＸｌ０−’Ω−’ｅ１ｍ−’に
また暗導電率はｌＸｌ０−６Ω−１ｃｍ−１から５Ｘ１
０−６Ω″′Ｉｃｆｆ１−！に夫々改善されているのが
解る。As is clear from comparing these graphs, the p-type amorphous semiconductor layer obtained by the method of the present invention has a larger optical band gap than the p-type amorphous semiconductor layer obtained by the conventional method. Of course, the optical conductivity is lXl0-
5Ω-1cm-1 to lXl0-'Ω-'e1m-' and the dark conductivity from lXl0-6Ω-1cm-1 to 5X1
It can be seen that the resistance has been improved to 0-6Ω''Icff1-!.
以上の如く本発明方法にあってはｎ型半導体層のｐ型ド
ーパント及びワイドギ中ツブ材料用染料ガスとしてトリ
メチルボロンを用いることとしたから分解が容易であり
、使用反応ガスの種類及びガス量ともに少なくて済む外
、暗４電率、光導電率が改善され低抵抗で且つ光学的バ
ンドギャップの大きいｎ型半導体層が製作出来るなど本
発明は優れた効果を奏するものである。As described above, in the method of the present invention, trimethylboron is used as the p-type dopant for the n-type semiconductor layer and as the dye gas for the wide diameter material, so decomposition is easy, and both the type and amount of the reaction gas used are The present invention has excellent effects, such as being able to produce an n-type semiconductor layer with improved dark conductivity and photoconductivity, low resistance, and a large optical band gap, in addition to requiring only a small amount of metal.
第１図は本発明方法の実施状態を示す枳弐図、第２図は
本発明方法により得たｎ型半導体層の光学的ハンドギャ
ップを示す図、第３図は本発明方法に依ったｎ型半導体
層の光導電率、暗導電率を示すグラフ、第４図は従来方
法で得たｎ型半導体層の光学的ハンドギヤツブを示す図
、第５図は従来方法によって得たｎ型半導体層の光導電
率、暗光電率を示すグラフである。
１・・・反応炉 ２ｕ＋２ｄ・・・電極 ３・・・高周
波電源４．５・・・環材ガスタンク ６・・・ロークリ
ポンプ７・・・基板
特 許 出願人 三洋電機株式会社
代理人 弁理士 河 野 登 夫
茎 １ 図
簿 ２ 凶
手続補正書（自発）
昭和６１年７月２２日FIG. 1 is a diagram showing the implementation state of the method of the present invention, FIG. 2 is a diagram showing the optical hand gap of the n-type semiconductor layer obtained by the method of the present invention, and FIG. Figure 4 is a graph showing the photoconductivity and dark conductivity of the n-type semiconductor layer obtained by the conventional method. Figure 5 is the graph showing the optical hand gear of the n-type semiconductor layer obtained by the conventional method. It is a graph showing photoconductivity and dark photoconductivity. 1... Reaction furnace 2u+2d... Electrode 3... High frequency power supply 4.5... Ring material gas tank 6... Rokuri pump 7... Substrate patent Applicant Sanyo Electric Co., Ltd. agent Patent attorney Kono Nobukoku 1 Catalog 2 Written amendment of wrongful procedure (voluntary) July 22, 1985
Claims (1)
で、反応ガスとしてトリメチルボロンを用いることを特
徴とする半導体の製造方法。 ２、前記トリメチルボロンはｐ型ドーパント、又はワイ
ドギャップ材料の原料として用いられる特許請求の範囲
第１項記載の半導体の製造方法。[Claims] 1. A method for manufacturing a semiconductor, characterized in that trimethylboron is used as a reactive gas in the process of forming a p-type semiconductor layer using a glow discharge method. 2. The method of manufacturing a semiconductor according to claim 1, wherein the trimethylboron is used as a p-type dopant or a raw material for a wide gap material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870985A JPS6229132A (en) | 1985-07-30 | 1985-07-30 | Manufacture of semiconductor |
| US06/888,474 US4755483A (en) | 1985-07-30 | 1986-07-21 | Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor film formed by photo-chemical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870985A JPS6229132A (en) | 1985-07-30 | 1985-07-30 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6229132A true JPS6229132A (en) | 1987-02-07 |
Family
ID=15872995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16870985A Pending JPS6229132A (en) | 1985-07-30 | 1985-07-30 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6229132A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63284809A (en) * | 1987-05-15 | 1988-11-22 | Sanyo Electric Co Ltd | Method of forming p-type amorphous silicon carbide layer |
| JPS6411317A (en) * | 1987-07-06 | 1989-01-13 | Toshiba Corp | Manufacture of semiconductor device |
| US5238866A (en) * | 1991-09-11 | 1993-08-24 | GmbH & Co. Ingenieurburo Berlin Biotronik Mess- und Therapiegerate | Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating |
| JPH07230957A (en) * | 1994-02-15 | 1995-08-29 | Nippon Steel Corp | Forming method of boron-containing polysilicon film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115020A (en) * | 1981-12-28 | 1983-07-08 | Sharp Corp | Preparation of amorphous silicon film |
-
1985
- 1985-07-30 JP JP16870985A patent/JPS6229132A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58115020A (en) * | 1981-12-28 | 1983-07-08 | Sharp Corp | Preparation of amorphous silicon film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63284809A (en) * | 1987-05-15 | 1988-11-22 | Sanyo Electric Co Ltd | Method of forming p-type amorphous silicon carbide layer |
| JPS6411317A (en) * | 1987-07-06 | 1989-01-13 | Toshiba Corp | Manufacture of semiconductor device |
| US5238866A (en) * | 1991-09-11 | 1993-08-24 | GmbH & Co. Ingenieurburo Berlin Biotronik Mess- und Therapiegerate | Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating |
| JPH07230957A (en) * | 1994-02-15 | 1995-08-29 | Nippon Steel Corp | Forming method of boron-containing polysilicon film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6122622A (en) | Method and device for producing photovoltaic power panel | |
| JPH06105691B2 (en) | Method for producing carbon-doped amorphous silicon thin film | |
| JPH084071B2 (en) | Deposited film formation method | |
| US4292343A (en) | Method of manufacturing semiconductor bodies composed of amorphous silicon | |
| US4446168A (en) | Method of forming amorphous silicon | |
| JPS6229132A (en) | Manufacture of semiconductor | |
| JPS6329821B2 (en) | ||
| JPS6188570A (en) | Manufacture of amorphous silicon solar cell | |
| US5221643A (en) | Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen | |
| JP2003188400A (en) | Crystalline silicon carbide film and manufacturing method thereof, and solar cell | |
| JPS6132416A (en) | Manufacture of semiconductor device | |
| JP2688219B2 (en) | Photoelectric conversion element | |
| JPH01161777A (en) | Manufacture of amorphous semiconductor solar cell | |
| JPH0554692B2 (en) | ||
| JPS62196876A (en) | Photosensor and manufacture thereof | |
| JPS63284809A (en) | Method of forming p-type amorphous silicon carbide layer | |
| JPS62163314A (en) | Thin-film multilayer structure and forming method thereof | |
| JP2000196122A (en) | Photovolatic element | |
| JPH02177371A (en) | Manufacture of amorphous solar cell | |
| JPS5857757A (en) | Preparation of amorphous silicon solar battery | |
| JPS6216514A (en) | Manufacture of photoelectric conversion element | |
| JPS60128610A (en) | Method of forming thin film | |
| JPH05343713A (en) | Manufacture of amorphous solar cell | |
| JPH05275726A (en) | Photoelectric conversion device | |
| JPS58102569A (en) | Manufacture of amorphous silicon solar battery |