JPS62287080A - Device for automatically monitoring electroless plating - Google Patents
Device for automatically monitoring electroless platingInfo
- Publication number
- JPS62287080A JPS62287080A JP13024886A JP13024886A JPS62287080A JP S62287080 A JPS62287080 A JP S62287080A JP 13024886 A JP13024886 A JP 13024886A JP 13024886 A JP13024886 A JP 13024886A JP S62287080 A JPS62287080 A JP S62287080A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- electroless plating
- film thickness
- deposition rate
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007772 electroless plating Methods 0.000 title claims abstract description 16
- 238000012544 monitoring process Methods 0.000 title abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 21
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 7
- 238000012806 monitoring device Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/168—Control of temperature, e.g. temperature of bath, substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
〔産業上の利用分野〕
本発明は無電解メッキの析出膜厚及び析出速度を、自動
的にモニターする装置に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an apparatus for automatically monitoring the deposited film thickness and deposition rate of electroless plating.
従来から無電解メッキ析出膜厚及び析出速度モニターと
して重量変化による方法(重量法)、抵抗値変化による
方法が提案されていた。Conventionally, a method based on weight change (gravimetric method) and a method based on resistance value change have been proposed for monitoring the thickness and deposition rate of electroless plating deposits.
即ち、重量法とは無電解メッキ浴中に触媒活性のある金
属またはこれに被覆された試料片を一定時間投入し、無
電解メッキ反応に伴う試料片の重量増を測定することに
より析出膜厚及び析出速度を求めていた。重量法の場合
、析出膜厚及び析出速度の測定は断続的であり、再現性
に難点があり、測定間隔も長いという欠点があり、即座
に析出状態を知ることは出来なかった。In other words, the gravimetric method involves placing a catalytically active metal or a sample piece coated with the metal in an electroless plating bath for a certain period of time, and measuring the weight increase of the sample piece due to the electroless plating reaction. and the precipitation rate. In the case of the gravimetric method, the measurement of the deposited film thickness and deposition rate is intermittent, which has drawbacks such as difficulty in reproducibility and long measurement intervals, and it is not possible to immediately know the deposition state.
この欠点を改良するため抵抗値変化による方法が提案さ
れ無電解メッキ析出膜厚及び速度を自動的かつオンタイ
ムで測定することが可能となった。(特願昭80−10
4971号) しかしこの装置では温度変化による抵抗
値変化があたかも膜厚が増減したかの如く計算されこれ
が誤差の原因となり精度良く測定出来ないという欠点が
あった。In order to improve this drawback, a method using resistance value changes was proposed, and it became possible to measure the electroless plating deposition film thickness and speed automatically and on-time. (Special application 1980-10
(No. 4971) However, this device had the disadvantage that changes in resistance due to temperature changes were calculated as if the film thickness had increased or decreased, which caused errors and made it impossible to measure accurately.
本発明の目的は、前記従来技術の欠点を改良し、無電解
浴における無電解メッキ析出膜厚および析出速度を自動
的かつオンタイムで精度よく測定し、もって被メッキ物
のメッキ品質を一定とすることを可能とする無電解メッ
キの自動モニター装置を提供することにある。The purpose of the present invention is to improve the drawbacks of the prior art, to automatically and accurately measure the thickness and deposition rate of electroless plating in an electroless bath, and thereby to maintain a constant plating quality of the object to be plated. An object of the present invention is to provide an automatic monitoring device for electroless plating that makes it possible to monitor electroless plating.
本発明は導電化された絶縁材料上に設けた規定のパター
ンを有する電気回路、抵抗値測定機構、液温測定機構、
ならびにメッキ析出膜厚およびメッキ析出速度演算機構
を備えてなる無電解メッキの自動モニター装置である。The present invention provides an electric circuit having a prescribed pattern provided on a conductive insulating material, a resistance value measuring mechanism, a liquid temperature measuring mechanism,
This is an automatic electroless plating monitoring device that is equipped with a plating deposition film thickness and a plating deposition rate calculation mechanism.
パターン回路において析出膜厚および析出速度は次の式
により算出することができる。In a pattern circuit, the deposited film thickness and deposition rate can be calculated using the following formula.
ここにT・・・・・・時刻tにおける析出膜厚ρ・・・
・・・メッキ標準温度におけるメッキ金属の固有抵抗値
L・・・・・・パターンの長さ
W・・・・・・パターンの幅
Rt・・・時刻tにおける抵抗値
RO・・・初期抵抗値
V・・・・・・時刻1.から時刻t2までの平均析出速
度
Rt2・・・時刻t2における抵抗値
Rtl・・・時刻t1における抵抗値
しかしながら式(1)、(2)が成立するのは測定の温
度が一定であることを前提としており、実際の無電解メ
ッキ液の温度管理状態では温度変化による抵抗値変化が
析出膜厚測定および析出速度測定の精度に与える影響は
大きい。メッキ液温を測定し次式に基づき析出膜厚およ
び析出速度を算出する本発明の方式により析出膜厚測定
及び析出速度測定の精度が大幅に向上する。Here, T... Deposited film thickness ρ at time t...
... Specific resistance value of plating metal at standard plating temperature L ... Pattern length W ... Pattern width Rt ... Resistance value at time t RO ... Initial resistance value V...Time 1. Average deposition rate Rt2 from to time t2...Resistance value at time t2 Rtl...Resistance value at time t1 However, equations (1) and (2) hold on the premise that the measurement temperature is constant. Therefore, in actual temperature control conditions of electroless plating solutions, changes in resistance due to temperature changes have a large effect on the accuracy of deposited film thickness and deposition rate measurements. The method of the present invention, which measures the plating solution temperature and calculates the deposited film thickness and deposition rate based on the following equations, greatly improves the accuracy of deposited film thickness and deposition rate measurements.
ここにT、ρ、L、W、Rt、R,、Rtl、Rt2は
前の定義と同じであり、
α・・・・・・メッキ金属の固有抵抗値の温度係数Ct
・・・時刻tにおけるメッキ液温
C5・・・メッキ標準温度
co・・・初期抵抗測定時のメッキ液温Ctl・・・時
刻t1におけるメッキ液温Ct2・・・時刻t2におけ
るメッキ液温である。Here, T, ρ, L, W, Rt, R,, Rtl, Rt2 are the same as the previous definitions, α...Temperature coefficient of specific resistance value of plated metal Ct
...Plating solution temperature at time t C5...Plating standard temperature co...Plating solution temperature at the time of initial resistance measurement Ctl...Plating solution temperature at time t1 Ct2...Plating solution temperature at time t2 .
以上の測定原理を用いて析出膜厚および析出速度は測定
できるが、モニター装置としては上述の回路のほか抵抗
を測定するための回路両端に設けられる公知の電極、抵
抗値測定機構および演算機構を備えて構成される。The deposited film thickness and deposition rate can be measured using the above measurement principle, but in addition to the above-mentioned circuit, the monitoring device also uses known electrodes installed at both ends of the circuit for measuring resistance, a resistance value measurement mechanism, and a calculation mechanism. Prepared and configured.
本発明の無電解メッキモニター装置を図面によって説明
する。第1図は本装置の構成を説明するためのブロック
図である。電気抵抗センサー2はメッキ槽1中のメッキ
液に浸漬さる。該センサーは第2図に示すごとく、絶縁
材料7上にパターン化された抵抗測定用回路部6を有す
る。センサーの2つの電極から抵抗値測定機構3に結線
されて抵抗値が読みとられ、液温測定機構4により液温
が読み取られ、さらに演算機構5によりメッキ膜厚およ
び速度が演算される。The electroless plating monitoring device of the present invention will be explained with reference to the drawings. FIG. 1 is a block diagram for explaining the configuration of this device. The electrical resistance sensor 2 is immersed in the plating solution in the plating tank 1. The sensor has a resistance measuring circuit 6 patterned on an insulating material 7, as shown in FIG. The two electrodes of the sensor are connected to a resistance value measuring mechanism 3 to read the resistance value, the liquid temperature measuring mechanism 4 reads the liquid temperature, and the calculating mechanism 5 calculates the plating film thickness and speed.
上記装置は自動的かつオンタイムでメッキ速度を測定で
きるので、さらに自動調節装置と連結することにより、
メッキ操業を自動的にコントロールできることは言うま
でもない。Since the above device can measure the plating speed automatically and on-time, by connecting it with an automatic adjustment device,
Needless to say, plating operations can be automatically controlled.
以下本発明の装置ならびに同装置による測定の実施例を
示す。Examples of the apparatus of the present invention and measurements performed using the apparatus will be shown below.
紙フエノール基材(日立化成481F材)に被メッキ物
の密着性向上させるために接着剤(A、C,I。Adhesives (A, C, I) are used to improve the adhesion of the plated object to the paper phenol base material (Hitachi Chemical 481F material).
ジャパン社製エバーグリップ754)を塗布し、160
℃2時間で硬化し、触媒(シラプレー社製キャタリスト
13F)処理後、ドライフィルム(日立化成5R−30
00)で幅1 m+++、回路長1mのパターンを形成
した。次に無電解銅メッキ(メッキ浴組成: EDTA
30g/ fL、 Cu!1i04 @ 5H2
010g / l HCHO(37% 水溶液として
)2mJ/交、pH:12.5、メッキ温度ニア0℃)
により該回路上に銅を析出させて抵抗測定用センサーを
形成した。このセンサー及び液温計を上述の無電解銅メ
ッキ液に浸漬してメッキを行ない本発明の装置を用いて
析出速度及び膜厚を測定した結果を表1に示す。参考の
為湿度補正を行なわない場合の測定結果及び光学顕微鏡
を用いた断面観察による膜厚測定結果を(51記した。Apply Evergrip 754) manufactured by Japan Co., Ltd., and
After curing for 2 hours at ℃ and treatment with a catalyst (Catalyst 13F manufactured by Silapray), dry film (Hitachi Chemical 5R-30
00), a pattern with a width of 1 m+++ and a circuit length of 1 m was formed. Next, electroless copper plating (plating bath composition: EDTA
30g/fL, Cu! 1i04 @5H2
010g/l HCHO (as 37% aqueous solution) 2mJ/AC, pH: 12.5, plating temperature near 0℃)
Copper was deposited on the circuit to form a resistance measurement sensor. The sensor and liquid thermometer were immersed in the electroless copper plating solution described above for plating, and the deposition rate and film thickness were measured using the apparatus of the present invention. Table 1 shows the results. For reference, the measurement results without humidity correction and the film thickness measurement results obtained by cross-sectional observation using an optical microscope are shown in (51).
析出銅膜厚をパラメータとして膜厚誤差に及ぼす温度の
影響を表2に示す。表1,2から明らかなように本発明
の装置を用いることにより短い時間間隔で析出膜厚およ
び析出速度を測定することが可能となった。Table 2 shows the influence of temperature on the film thickness error using the deposited copper film thickness as a parameter. As is clear from Tables 1 and 2, by using the apparatus of the present invention, it became possible to measure the deposited film thickness and deposition rate at short time intervals.
以上説明したように、本発明の装置を用いることにより
無電解メッキのように液組成が短時間で変化する系にお
いて、メッキ析出膜厚ならびにメッキ析出速度が短い測
定間隔で精度よく測定することが可能となったため、良
好な管理状態を保持でき、信頼性の高い自動制御が可能
となった。As explained above, by using the apparatus of the present invention, it is possible to accurately measure the plating deposit thickness and plating deposition rate at short measurement intervals in systems such as electroless plating where the liquid composition changes in a short time. This makes it possible to maintain good management conditions and achieve highly reliable automatic control.
第1図は本発明の無電解メッキの自動モニター装置の構
成を説明するブロック図、第2図はセンサーの説明図で
ある。
1・・・メッキ槽
2・・・センサー
3・・・抵抗値測定機構
4・・・メッキ液温測定機構
5・・・演算機構
6・・・抵抗値測定用回路部
7・・・絶縁材料
特許出願人 キャノン株式会社
代 理 人 若 林 忠第1図
第2図FIG. 1 is a block diagram illustrating the configuration of an automatic electroless plating monitoring device of the present invention, and FIG. 2 is an explanatory diagram of a sensor. 1... Plating tank 2... Sensor 3... Resistance value measuring mechanism 4... Plating liquid temperature measuring mechanism 5... Arithmetic mechanism 6... Resistance value measuring circuit section 7... Insulating material Patent applicant: Canon Co., Ltd. Agent: Tadashi Wakabayashi Figure 1
Figure 2
Claims (1)
る電気回路、電気抵抗測定機構、液温測定機構、ならび
にメッキ析出膜厚およびメッキ析出速度演算機構を備え
てなる無電解メッキの自動モニター装置。An automatic electroless plating monitoring device comprising an electric circuit having a prescribed pattern provided on a conductive insulating material, an electric resistance measuring mechanism, a liquid temperature measuring mechanism, and a plating deposition film thickness and plating deposition rate calculation mechanism. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13024886A JPS62287080A (en) | 1986-06-06 | 1986-06-06 | Device for automatically monitoring electroless plating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13024886A JPS62287080A (en) | 1986-06-06 | 1986-06-06 | Device for automatically monitoring electroless plating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62287080A true JPS62287080A (en) | 1987-12-12 |
Family
ID=15029692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13024886A Pending JPS62287080A (en) | 1986-06-06 | 1986-06-06 | Device for automatically monitoring electroless plating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62287080A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04124280A (en) * | 1990-09-17 | 1992-04-24 | Hitachi Chem Co Ltd | Instrument for measuring deposition speed of electroless plating |
US5270659A (en) * | 1990-10-17 | 1993-12-14 | Hitachi Chemical Company, Ltd. | Apparatus for measuring deposition speed of electroless plating |
DE19957067B4 (en) * | 1999-11-26 | 2004-02-12 | Technische Universität Dresden | Method and arrangement for monitoring the electroless metal deposition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57185968A (en) * | 1981-05-09 | 1982-11-16 | Hitachi Cable Ltd | Controlling method for plating thickness in electroless plating |
JPS58104166A (en) * | 1981-12-14 | 1983-06-21 | Oki Electric Ind Co Ltd | Continuous measuring method for thickness of electroless plating |
-
1986
- 1986-06-06 JP JP13024886A patent/JPS62287080A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57185968A (en) * | 1981-05-09 | 1982-11-16 | Hitachi Cable Ltd | Controlling method for plating thickness in electroless plating |
JPS58104166A (en) * | 1981-12-14 | 1983-06-21 | Oki Electric Ind Co Ltd | Continuous measuring method for thickness of electroless plating |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04124280A (en) * | 1990-09-17 | 1992-04-24 | Hitachi Chem Co Ltd | Instrument for measuring deposition speed of electroless plating |
US5270659A (en) * | 1990-10-17 | 1993-12-14 | Hitachi Chemical Company, Ltd. | Apparatus for measuring deposition speed of electroless plating |
DE19957067B4 (en) * | 1999-11-26 | 2004-02-12 | Technische Universität Dresden | Method and arrangement for monitoring the electroless metal deposition |
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